CN104852715A - Radio frequency antenna switch - Google Patents
Radio frequency antenna switch Download PDFInfo
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- CN104852715A CN104852715A CN201510187295.2A CN201510187295A CN104852715A CN 104852715 A CN104852715 A CN 104852715A CN 201510187295 A CN201510187295 A CN 201510187295A CN 104852715 A CN104852715 A CN 104852715A
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
- H03K17/56—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices
- H03K17/687—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used by the use, as active elements, of semiconductor devices the devices being field-effect transistors
Abstract
The present invention provides a radio frequency antenna switch. The radio frequency antenna switch comprises a first communication module and a second communication module, wherein the first communication is provided with a first transmitting port and a first receiving port, an antenna port is arranged between the first transmitting port and the first receiving port, the first transmitting port is connected with the antenna port through a first transistor unit to form a transmitting passage while the first receiving port is connected with the antenna port through a second transistor unit to form a receiving passage, the second communication module is provided with a second transmitting port and a second receiving port, the second transmitting port is connected with the antenna port through a fifth transistor unit to form a transmitting passage while the second receiving port is connected with the antenna port through a six transistor unit to form a receiving passage, and the first transistor unit, the second transistor unit, the fifth transistor unit and the six transistor unit are all provided with feedforward capacitors. The radio frequency antenna switch provided by the present invention meets a high-power transmitting requirement, and the linearity, insertion losses and isolation are also raised.
Description
Technical field
The present invention relates to field of radio frequency integrated circuits, especially a kind of radio-frequency antenna switch.
Background technology
Along with multimode multi-frequency Mobile Communication Development, in radio-frequency front-end integrated circuit (IC) design, radio-frequency antenna switch becomes increasingly complex, and it requires higher power linear degree, low insertion loss, high-isolation and high harmonics restraint ratio.
In the prior art, as shown in Figure 1, serial-parallel structure can be adopted to improve the isolation of radio-frequency antenna switch.But this radio-frequency antenna switch is symmetrical structure, area is comparatively large, therefore is unsuitable for complicated construction of switch; Throw after number increases simultaneously in radio-frequency antenna switch, the insertion loss of this switch also can increase, therefore insertion loss is also a bottleneck.
In order to solve the problem, be necessary to provide a kind of duplexer framework being applicable to multimode multi-frequency, to improve the performance of radio-frequency antenna switch.
Summary of the invention
The object of the present invention is to provide a kind of radio-frequency antenna switch, to improve insertion loss, improve isolation, and meet high-power launch requirements.
In order to achieve the above object, the invention provides a kind of radio-frequency antenna switch, comprising:
First communication module, there is at least one first emission port and the first receiving port, antenna port is arranged between described first emission port and the first receiving port, described first emission port is connected to form transmission channel by first crystal pipe unit and antenna port, described first receiving port is connected to form receive path by transistor seconds unit and antenna port, by third transistor unit by the first emission port ground connection, by the 4th transistor unit by the first receiving port ground connection;
Second communication module, there is at least one second emission port and the second receiving port, described second emission port is connected to form transmission channel by the 5th transistor unit and antenna port, described second receiving port is connected to form receive path by the 6th transistor unit and antenna port, by the 7th transistor unit by the second emission port and the second receiving port ground connection respectively;
Wherein, described first crystal pipe unit, transistor seconds unit, third transistor unit, the 4th transistor unit, the 5th transistor unit, the 6th transistor unit and the 7th transistor unit are provided with feed-forward capacitance.
Further, described first crystal pipe unit, transistor seconds unit, third transistor unit, the 4th transistor unit, the 5th transistor unit, the 6th transistor unit and the 7th transistor unit are a group transistor, and arbitrary group transistor includes multiple transistors of a transistor or stacked in series setting.
Further, described first crystal pipe unit, transistor seconds unit, third transistor unit, the 5th transistor unit and the 6th transistor unit include two group transistors, and described 4th transistor and the 7th transistor include a group transistor.
Further, arbitrary group transistor includes six transistors that stacked in series is arranged.
Further, the transmission channel of described first communication module, second communication module and the quantity of receive path are multiple, the receive path of multiple described first communication module is tree topology, and several transistors total, described second emission port is the second receiving port, the transmission channel of multiple described second communication module and receive path transmitting-receiving consubstantiality, and be tree topology, and several transistors total.
Further, described radio-frequency antenna switch is hilted broadsword 16 throw switch, and the transmission channel of described first communication module and receive path are respectively two and four, and the quantity of the radio-frequency channel of the described second communication module of transmitting-receiving consubstantiality is ten.
Further, described first communication module is 2G communication module, and adopting gsm communication standard, described second communication module comprises the 3G communication module of one or more communication standards adopted in WCDMA, TD-SCDMA and CDMA2000 and adopts the 4G communication module of TD-LTE and/or FDD-LTE communication standard.
Further, the break-make of transistor in described first crystal pipe unit, transistor seconds unit, third transistor unit, the 4th transistor unit, the 5th transistor unit, the 6th transistor unit and the 7th transistor unit is controlled by decoder.
Further, in described first crystal pipe unit, transistor seconds unit, third transistor unit, the 4th transistor unit, the 5th transistor unit, the 6th transistor unit and the 7th transistor unit, one or more transistor is CMOS transistor.
Further, in described first crystal pipe unit, transistor seconds unit, third transistor unit, the 4th transistor unit, the 5th transistor unit, the 6th transistor unit and the 7th transistor unit, one or more transistor adopts SOI-CMOS transistor.The invention provides a kind of radio-frequency antenna switch, by arranging multiple transistor and make arbitrary transmission channel all meet high power transmission requirement transmission channel being stacked; By arranging the voltage distribution between feed-forward capacitance change transistor source and drain electrode, improve the linearity of radio-frequency antenna switch; Multiple receive paths of first communication module share several transistors, and the transceiver channel of second communication module also shares several transistors, is improve the insertion loss of radio-frequency antenna switch by the mode arranging several transistors shared; The isolation of radio-frequency antenna switch is improve by arranging the tree topology with multiple transmission channel and multiple receive path.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of radio-frequency antenna switch of the prior art;
The schematic diagram of the radio-frequency antenna switch that Fig. 2 provides for the embodiment of the present invention;
Fig. 3 is the schematic diagram of the transistor not adopting feed-forward capacitance;
Fig. 4 is the schematic diagram of the transistor adopting feed-forward capacitance;
Fig. 5 is the distribution map of source transistor drain voltage;
The general frame figure of the radio-frequency antenna switch that Fig. 6 provides for the embodiment of the present invention;
The schematic diagram of the insertion loss of the radio-frequency antenna switch that Fig. 7 provides for the embodiment of the present invention;
The schematic diagram of the isolation of the radio-frequency antenna switch that Fig. 8 provides for the embodiment of the present invention;
The schematic diagram of the power output of the radio-frequency antenna switch that Fig. 9 provides for the embodiment of the present invention;
The schematic diagram of the harmonics restraint ratio of the radio-frequency antenna switch that Figure 10 provides for the embodiment of the present invention.
In figure, 1: first crystal pipe unit, 21: the first tree transistors unit, 22: the first total transistor units, 3: third transistor unit, 4: the four transistor units, 51: the second tree transistors unit, 52: the second total transistor units, 7: the seven transistor units, 8: gate series resistance, 9: biasing resistor between source and drain.
Embodiment
Below in conjunction with schematic diagram, the specific embodiment of the present invention is described in more detail.According to following description and claims, advantages and features of the invention will be clearer.It should be noted that, accompanying drawing all adopts the form that simplifies very much and all uses non-ratio accurately, only in order to object that is convenient, the aid illustration embodiment of the present invention lucidly.
As shown in Figure 2, embodiments provide a kind of radio-frequency antenna switch, comprising:
First communication module, there is at least one first emission port and the first receiving port, antenna port ANT is arranged between described first emission port and the first receiving port, described first emission port is connected to form transmission channel by first crystal pipe unit 1 with antenna port ANT, described first receiving port is connected to form receive path by transistor seconds unit and antenna port ANT, by third transistor unit 3 by the first emission port ground connection, by the 4th transistor unit 4 by the first receiving port ground connection;
Second communication module, there is at least one second emission port and the second receiving port, described second emission port is connected to form transmission channel by the 5th transistor unit and antenna port ANT, described second receiving port is connected to form receive path by the 6th transistor unit and antenna port ANT, by the 7th transistor unit 7 by the second emission port and the second receiving port ground connection respectively.
Preferably, described first communication module is 2G communication module (Generation Mobile Telecommunication System network), and adopting gsm communication standard, described second communication module comprises 3G (3 G mobile communication network) communication module of one or more communication standards adopted in WCDMA, TD-SCDMA and CDMA2000 and adopts 4G (forth generation mobile communications network) communication module of TD-LTE and/or FDD-LTE communication standard.In the present embodiment, described second communication module comprises 3G communication module and 4G communication module.
Preferably, described radio-frequency antenna switch is single pole multiple throw, the transmission channel of described first communication module, second communication module and the quantity of receive path are multiple, in the present embodiment, the receive path of multiple described first communication module is tree topology, and the receive path of multiple described first communication module has several transistors.
In the present embodiment, the transmission channel of described second communication module and receive path transmitting-receiving consubstantiality, described second emission port is the second receiving port, described 5th transistor unit be arranged on the transmission channel of second communication module is described 6th transistor unit be arranged on receive path, the transmission channel of the second communication module of transmitting-receiving consubstantiality and receive path might as well be referred to as radio-frequency channel, this radio-frequency channel is provided with described 5th transistor unit, 5th transistor unit comprises the second tree transistors unit 51 and the second total transistor unit 52, the radio-frequency channel of the described second communication module of transmitting-receiving consubstantiality is tree topology, multiple described radio-frequency channel has several transistors.In the present embodiment, the quantity of the radio-frequency channel of described 3G communication module and 4G communication module is multiple, the receive path of multiple described 2G communication module has several the first total transistor units 21, the radio-frequency channel of multiple described 3G communication module has several the second total transistor units 51, and the radio-frequency channel of multiple described 4G communication module has several the second total transistor units 51.
In the present embodiment, described radio-frequency antenna switch is hilted broadsword 16 throw switch, the transmission channel of described 2G communication module and receive path are respectively two and four, first emission port is Tx1 and Tx2, first receiving port is Rx1-Rx4, and the prevention at radio-frequency port of the described 3G communication module of transmitting-receiving consubstantiality is TRx1-TRx5, and namely the quantity of its radio-frequency channel is five, the prevention at radio-frequency port of the described 4G communication module of transmitting-receiving consubstantiality is TRx6-TRx10, and namely the quantity of its radio-frequency channel is five.
Preferably, in described first crystal pipe unit 1, transistor seconds unit, third transistor unit 3, the 4th transistor unit 4, the 5th transistor unit, the 6th transistor unit and the 7th transistor unit 7, the control end of transistor is transistor controls end Ct, and include at least one group transistor, arbitrary group transistor includes multiple transistors that stacked in series is arranged, and is arranged multiple transistor made arbitrary transmission channel all meet high power transmission requirement by stacked.
Transistor seconds unit comprises the first tree transistors unit 21 and the first total transistor unit the 22, five transistor unit comprises the second tree transistors unit 51 and the second total transistor unit 52.In the present embodiment, described first crystal pipe unit 1 and third transistor unit 3 include two group transistors, total transistor unit 22, the second tree transistors unit of first tree transistors unit 21, first 51 and the second total transistor unit 52 are one group, 4th transistor unit 4 and the 7th transistor unit 7 include a group transistor, and arbitrary group transistor includes six transistors that stacked in series is arranged.
Preferably, in described first crystal pipe unit, transistor seconds unit, third transistor unit, the 4th transistor unit, the 5th transistor unit, the 6th transistor unit and the 7th transistor unit, arbitrary transistor is CMOS transistor.In the present embodiment, described first crystal pipe unit, transistor seconds unit, third transistor unit, the 4th transistor unit, the 5th transistor unit, the 6th transistor unit and the 7th transistor unit all adopt based on RF-SOI technique SOI-CMOS transistor, by using SOI-CMOS transistor to reduce cost, and SOI-CMOS transistor is preferably nmos pass transistor.
In the present embodiment, radio-frequency antenna switch also comprises gate series resistance 8, and for isolating the control signal of radio frequency and transistor controls end Ct, radio-frequency antenna switch also comprises biasing resistor 9 between source and drain, for stablizing the direct current biasing of this radio-frequency antenna switch.
As shown in Figure 3, in the transistor arrangement of traditional stacked setting, between source electrode and drain electrode, voltage's distribiuting is very unbalanced, if this radio-frequency antenna switch access large-signal, then can be in overvoltage condition between the source and drain of stacked transistors, affect its high-power linearity.As shown in Figure 4, FFCT (feed-forward capacitance technology, FeedForward Capacitor Technique) is adopted to solve the problem very well.As shown in Figure 5, in Figure 5, Typical curve represents the transistor arrangement of traditional stacked setting, the representative of FFCT curve adopts the transistor arrangement with the stacked setting of feed-forward capacitance 10, abscissa Stacked Number represents the number of the transistor of stacked setting, and ordinate represents source-drain voltage, adopts FFCT mode effectively can improve the problem of source-drain voltage skewness weighing apparatus, effective alleviation source and drain overvoltage condition, thus improve the linearity under large input power.
In the present embodiment, described first crystal pipe unit 1, transistor seconds unit, third transistor unit 3, the 4th transistor unit 4, the 5th transistor unit, the 6th transistor unit and the 7th transistor unit 7 are provided with feed-forward capacitance 10.Feed-forward capacitance 10 can be arranged between grid and source electrode or between grid and drain electrode.When the drain electrode for transistor be connected with rf inputs, feed-forward capacitance 10 is arranged between grid and drain electrode; When the source electrode for transistor be connected with rf inputs, feed-forward capacitance 10 is arranged between grid and source electrode.In the present embodiment, feed-forward capacitance 10 is arranged between grid and drain electrode.
As shown in Figure 6, in the present embodiment, decoder is used for switch numbers logic control, this decoder controls described first crystal pipe unit 1 by transistor controls end Ct, transistor seconds unit, third transistor unit 3, 4th transistor unit 4, 5th transistor unit, the break-make of the 6th transistor unit and the 7th transistor unit 7, this decoder is connected with current potential translation device, this current potential translation device is connected with negative voltage generator, the decoder output signal that current potential translation device comes according to input and the output signal of negative voltage generator are by digital logic level translation, negative supply voltage and supply voltage is separately converted to by level 0 and 1, the negative supply voltage that current potential translation device exports and supply voltage input to above-mentioned transistor controls end Ct, for controlling opening and shutting off of radio-frequency antenna switch.
In the present embodiment, VDD is 2.5 volts, VSS ground connection, and negative supply voltage and supply voltage are respectively-2.5 volts and 2.5 volts, RF1-RF16 and described Tx1-Tx2, Rx1-Rx4 and TRx1-10 one_to_one corresponding.
The radio-frequency antenna switch that the present embodiment provides is emulated, obtains simulation result figure as is seen in figs 7-10.
As shown in Figure 7, this hilted broadsword 16 throws duplexer at Tx (in the present embodiment, comprise Tx1-Tx2), under Rx (Rx1-Rx4) and TRx (TRx1-10) Three models, and during the signal source of Tx, Rx and TRx access 2GHz frequency (Frequency), insertion loss (Insertion Loss) is respectively 0.45dB, 0.75dB and 0.8dB, all be less than 1dB, meet the requirement of mobile communication.
As shown in Figure 8, when accessing 2GHz signal source, there are under Tx, Rx and TRx Three models seven kinds of isolations, and be all less than 35dB.Described seven kinds of isolations (Isolation) are respectively Tx-Tx, Tx-Rx, Tx-TRx, Rx-Rx, Rx-TRx, TRx-TRx inter and TRx-TRx Ext.Wherein, Tx-Tx is the isolation between two 2G communication module transmission channels, Tx-Rx is the isolation between the transmission channel of a 2G communication module and the receive path of a 2G communication module, Tx-TRx is the isolation of the transmission channel of a 2G communication module and the radio-frequency channel of a 3G communication module or 4G communication module, TRx-TRx inter is the isolation between two radio-frequency channels in 3G communication module many radio-frequency channels and the isolation between two radio-frequency channels in 4G communication module many radio-frequency channels, TRx-TRx Ext is the isolation of the radio-frequency channel of a 3G communication module and the radio-frequency channel of a 4G communication module, Rx-Rx and Rx-TRx in like manner, do not repeat them here.
As shown in Figure 9, under the high power transmission pattern of 2G communication module (adopting gsm communication standard), 0.1dB compression point power (P
0.1dB) be 37.6dBm, meet the requirement of mobile communication to GSM transmitting power 33dBm.
As shown in Figure 10, under the high power transmission pattern of 2G communication module, when input power is 35dBm, second harmonic and triple-frequency harmonics rejection ratio (Harmonic Suppression) are respectively 85dBc and 78dBc, are all greater than the design objective requirement of 75dBc.
To sum up, the invention provides a kind of radio-frequency antenna switch, by arranging multiple transistor and make arbitrary transmission channel all meet high power transmission requirement transmission channel being stacked; By arranging the voltage distribution between feed-forward capacitance change transistor source and drain electrode, improve the linearity of radio-frequency antenna switch; Multiple receive paths of first communication module share several transistors (the first total transistor unit 22), the radio-frequency channel of second communication module also shares several transistors (the second total transistor unit 52), is improve the insertion loss of radio-frequency antenna switch by the mode arranging several transistors shared; The isolation of radio-frequency antenna switch is improve by arranging the tree topology with multiple transmission channel and multiple receive path.
Above are only the preferred embodiments of the present invention, any restriction is not played to the present invention.Any person of ordinary skill in the field; in the scope not departing from technical scheme of the present invention; the technical scheme disclose the present invention and technology contents make the variations such as any type of equivalent replacement or amendment; all belong to the content not departing from technical scheme of the present invention, still belong within protection scope of the present invention.
Claims (10)
1. a radio-frequency antenna switch, is characterized in that, comprising:
First communication module, there is at least one first emission port and the first receiving port, antenna port is arranged between described first emission port and the first receiving port, described first emission port is connected to form transmission channel by first crystal pipe unit and antenna port, described first receiving port is connected to form receive path by transistor seconds unit and antenna port, by third transistor unit by the first emission port ground connection, by the 4th transistor unit by the first receiving port ground connection;
Second communication module, there is at least one second emission port and the second receiving port, described second emission port is connected to form transmission channel by the 5th transistor unit and antenna port, described second receiving port is connected to form receive path by the 6th transistor unit and antenna port, by the 7th transistor unit by the second emission port and the second receiving port ground connection respectively;
Wherein, described first crystal pipe unit, transistor seconds unit, third transistor unit, the 4th transistor unit, the 5th transistor unit, the 6th transistor unit and the 7th transistor unit are provided with feed-forward capacitance.
2. radio-frequency antenna switch as claimed in claim 1, it is characterized in that, described first crystal pipe unit, transistor seconds unit, third transistor unit, the 4th transistor unit, the 5th transistor unit, the 6th transistor unit and the 7th transistor unit are a group transistor, and arbitrary group transistor includes multiple transistors of a transistor or stacked in series setting.
3. radio-frequency antenna switch as claimed in claim 2, it is characterized in that, described first crystal pipe unit, transistor seconds unit, third transistor unit, the 5th transistor unit and the 6th transistor unit include two group transistors, and described 4th transistor and the 7th transistor include a group transistor.
4. radio-frequency antenna switch as claimed in claim 3, is characterized in that, arbitrary group transistor includes six transistors that stacked in series is arranged.
5. the radio-frequency antenna switch as described in any one of claim 1-4, it is characterized in that, the transmission channel of described first communication module, second communication module and the quantity of receive path are multiple, the receive path of multiple described first communication module is tree topology, and several transistors total, described second emission port is the second receiving port, the transmission channel of multiple described second communication module and receive path transmitting-receiving consubstantiality, and be tree topology, and several transistors total.
6. radio-frequency antenna switch as claimed in claim 5, it is characterized in that, described radio-frequency antenna switch is hilted broadsword 16 throw switch, and the transmission channel of described first communication module and receive path are respectively two and four, and the quantity of the radio-frequency channel of the described second communication module of transmitting-receiving consubstantiality is ten.
7. radio-frequency antenna switch as claimed in claim 1, it is characterized in that, described first communication module is 2G communication module, and adopting gsm communication standard, described second communication module comprises the 3G communication module of one or more communication standards adopted in WCDMA, TD-SCDMA and CDMA2000 and adopts the 4G communication module of TD-LTE and/or FDD-LTE communication standard.
8. radio-frequency antenna switch as claimed in claim 1, it is characterized in that, controlled the break-make of transistor in described first crystal pipe unit, transistor seconds unit, third transistor unit, the 4th transistor unit, the 5th transistor unit, the 6th transistor unit and the 7th transistor unit by decoder.
9. radio-frequency antenna switch as claimed in claim 1, it is characterized in that, in described first crystal pipe unit, transistor seconds unit, third transistor unit, the 4th transistor unit, the 5th transistor unit, the 6th transistor unit and the 7th transistor unit, one or more transistor is CMOS transistor.
10. radio-frequency antenna switch as claimed in claim 9, it is characterized in that, in described first crystal pipe unit, transistor seconds unit, third transistor unit, the 4th transistor unit, the 5th transistor unit, the 6th transistor unit and the 7th transistor unit, one or more transistor adopts SOI-CMOS transistor.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510187295.2A CN104852715A (en) | 2015-04-17 | 2015-04-17 | Radio frequency antenna switch |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510187295.2A CN104852715A (en) | 2015-04-17 | 2015-04-17 | Radio frequency antenna switch |
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| CN104852715A true CN104852715A (en) | 2015-08-19 |
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| CN201510187295.2A Pending CN104852715A (en) | 2015-04-17 | 2015-04-17 | Radio frequency antenna switch |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105162444A (en) * | 2015-09-12 | 2015-12-16 | 上海华虹宏力半导体制造有限公司 | Radio frequency switch body bias circuit |
| CN105871209A (en) * | 2016-03-29 | 2016-08-17 | 宜确半导体（苏州）有限公司 | Regenerative feedback circuit, DC-DC voltage converter and envelope tracker |
| CN106911327A (en) * | 2017-02-14 | 2017-06-30 | 上海华虹宏力半导体制造有限公司 | Difference transceiving radio frequency is switched and rf terminal |
| CN110365360A (en) * | 2018-04-11 | 2019-10-22 | 中芯国际集成电路制造（天津）有限公司 | Radio-frequency switch circuit and RF switch device |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101159440A (en) * | 2006-10-03 | 2008-04-09 | 三星电机株式会社 | Systems, methods, and apparatuses for complementary metal oxide semiconductor (cmos) antenna switches using body switching in multistacking structure |
| US20100073066A1 (en) * | 2008-09-25 | 2010-03-25 | Kabushiki Kaisha Toshiba | Radio-frequency switch circuit |
| CN103401531A (en) * | 2013-08-14 | 2013-11-20 | 锐迪科创微电子（北京）有限公司 | Multi-mode radio frequency antenna switch |
| US20140113680A1 (en) * | 2012-02-17 | 2014-04-24 | Kabushiki Kaisha Toshiba | Switch control circuit, semiconductor device, and radio communication device |
| CN103812523A (en) * | 2012-11-08 | 2014-05-21 | 财团法人工业技术研究院 | Switching circuit, radio frequency switching circuit and switching method thereof |
| CN103915432A (en) * | 2012-12-31 | 2014-07-09 | 稳懋半导体股份有限公司 | Compound semiconductor ESD protection devices |
-
2015
- 2015-04-17 CN CN201510187295.2A patent/CN104852715A/en active Pending
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101159440A (en) * | 2006-10-03 | 2008-04-09 | 三星电机株式会社 | Systems, methods, and apparatuses for complementary metal oxide semiconductor (cmos) antenna switches using body switching in multistacking structure |
| US20100073066A1 (en) * | 2008-09-25 | 2010-03-25 | Kabushiki Kaisha Toshiba | Radio-frequency switch circuit |
| US20140113680A1 (en) * | 2012-02-17 | 2014-04-24 | Kabushiki Kaisha Toshiba | Switch control circuit, semiconductor device, and radio communication device |
| CN103812523A (en) * | 2012-11-08 | 2014-05-21 | 财团法人工业技术研究院 | Switching circuit, radio frequency switching circuit and switching method thereof |
| CN103915432A (en) * | 2012-12-31 | 2014-07-09 | 稳懋半导体股份有限公司 | Compound semiconductor ESD protection devices |
| CN103401531A (en) * | 2013-08-14 | 2013-11-20 | 锐迪科创微电子（北京）有限公司 | Multi-mode radio frequency antenna switch |
Non-Patent Citations (12)
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105162444A (en) * | 2015-09-12 | 2015-12-16 | 上海华虹宏力半导体制造有限公司 | Radio frequency switch body bias circuit |
| CN105871209A (en) * | 2016-03-29 | 2016-08-17 | 宜确半导体（苏州）有限公司 | Regenerative feedback circuit, DC-DC voltage converter and envelope tracker |
| CN106911327A (en) * | 2017-02-14 | 2017-06-30 | 上海华虹宏力半导体制造有限公司 | Difference transceiving radio frequency is switched and rf terminal |
| CN106911327B (en) * | 2017-02-14 | 2020-01-17 | 上海华虹宏力半导体制造有限公司 | Differential transceiving radio frequency switch and radio frequency terminal |
| CN110365360A (en) * | 2018-04-11 | 2019-10-22 | 中芯国际集成电路制造（天津）有限公司 | Radio-frequency switch circuit and RF switch device |
| CN110365360B (en) * | 2018-04-11 | 2021-04-16 | 中芯国际集成电路制造（天津）有限公司 | Radio frequency switch circuit and radio frequency switch device |
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