CN104851868A - Packaging device and manufacturing method therefor - Google Patents
Packaging device and manufacturing method therefor Download PDFInfo
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- CN104851868A CN104851868A CN201410051473.4A CN201410051473A CN104851868A CN 104851868 A CN104851868 A CN 104851868A CN 201410051473 A CN201410051473 A CN 201410051473A CN 104851868 A CN104851868 A CN 104851868A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
Abstract
The invention discloses a packaging device, and the device comprises a first wire layer, a metal layer, a first dielectric layer, a second wire layer, a guide column layer, a passive element, a first sealing glue layer, a third wire layer, and a welding-resistant layer. The first wire layer is provided with a first surface and a second surface, which are opposite to each other. The metal layer is disposed on the first surface of the first wire layer. The first dielectric layer is disposed on the first wire layer and in the partial region of the first wire layer. The second wire layer is disposed on the first wire layer and the first dielectric layer. The guide column layer is disposed on the second wire layer, and forms a concave structure along with the second wire layer. The passive element is disposed on and electrically connected to the second wire layer in the concave structure. The first sealing glue layer is disposed in the partial region of the second wire layer and the guide column layer, and wraps the passive element, wherein the first sealing glue layer is not exposed from one end of the guide column layer. The third wire layer is disposed on the first sealing glue layer and one end of the guide column layer. The welding-resistant layer is disposed on the first sealing glue layer and the third wire layer.
Description
Technical field
The invention relates to a kind of packaging system and preparation method thereof, relate to a kind of semiconductor encapsulation device and preparation method thereof especially.
Background technology
In the electronic product of a new generation, continuous pursuit is more compact, more require that product has multi-functional and high-performance, therefore, integrated circuit (Integrated Circuit, IC) more polyelectron element must be held to reach high density and microminiaturized requirement in limited region, electronic industry development of new structure packing technique for this reason, electronic component is imbedded in substrate, significantly reduce packaging housing to amass, also the access path of electronic component and substrate is shortened, also can utilize in addition and increase layer technology (Build-Up) increase wiring area, to meet compact and multi-functional trend trend.
Fig. 1 is traditional glass fibre basal plate encapsulating structure.Glass fibre basal plate encapsulating structure 10 includes glass fibre basal plate 100, such as can be glass epoxy resin copper clad laminate FR-4 model or FR-5 model, wherein glass fibre basal plate 100 forms groove 110 and multiple via 120 via laser beam drilling (Laser Via), electronic component 130 is fixed in groove 110, metallic conduction post 140 is arranged in the via 120 of part, first metal conducting layer 142, 144 to be separately positioned on glass fibre basal plate 100 and to conduct with metallic conduction post 140, insulating barrier 150 covers groove 110, electronic component 130 and multiple via 120, second metal conducting layer 146, 148 be arranged on the upper of insulating barrier 150 and with electronic component 130 and the first metal conducting layer 142, 144 conduct.
But, above-mentioned traditional glass fibre basal plate encapsulating structure, it uses glass fibre material too expensive as the cost of substrate, and recycle laser beam drilling technology again to be formed the laminated construction of four layers of blind buried via hole of metal level laser, wherein, repeatedly laser beam drilling process time longer and complex manufacturing process, the cost of four layers of metal level is also higher, and traditional glass fibre basal plate encapsulating structure all can be caused not have industrial advantage.
Summary of the invention
The present invention proposes a kind of packaging system, it can use the material of main part that adhesive layer (Mold Compound Layer) is coreless substrate (Coreless Substrate), and utilize plating guide pillar layer to form via and pre-package interconnection system (Mold Interconnect System, MIS) packaged type is taken advantage of a situation and is embedded in substrate by passive device in substrate manufacture, forms the laminated construction burying passive device in simple three-layer metal layer.
The present invention proposes a kind of manufacture method of packaging system, it can use the sealing (MoldCompound) of lower cost to replace expensive glass fibre basal plate, and three-layer metal layer plating guide pillar laminar flow journey at lower cost replaces the expensive blind buried via hole flow process of four layers of metal level laser, so process time is shorter and flow process is simple.
In a first embodiment, the present invention proposes a kind of packaging system, and it comprises a conductor layer No.1, a metal level, one first dielectric layer, one second conductor layer, a guide pillar layer, a passive device, one first adhesive layer, a privates layer and a welding resisting layer.Conductor layer No.1 has a relative first surface and a second surface.Metal level is arranged on the first surface of conductor layer No.1.First dielectric layer is arranged at in the subregion of conductor layer No.1 on conductor layer No.1, and wherein the first dielectric layer is not exposed to the first surface of conductor layer No.1.Second conductor layer is arranged on conductor layer No.1 and the first dielectric layer.Guide pillar layer is arranged on the second conductor layer, and forms a concave structure with the second conductor layer.Passive device arrange and second conductor layer of electrical ties in concave structure on.First adhesive layer is arranged in the subregion of the second conductor layer and guide pillar layer, and coated passive device, wherein the first adhesive layer is not exposed to one end of guide pillar layer.Privates layer is arranged on one end of the first adhesive layer and guide pillar layer.Welding resisting layer is arranged on the first adhesive layer and privates layer.
In a first embodiment, the present invention proposes a kind of manufacture method of packaging system, and its step comprises: provide a metal support plate, and it has one first relative side and one second side; Form a conductor layer No.1 on the second side of metal support plate; Form one first dielectric layer on second side and conductor layer No.1 of metal support plate; Form one second conductor layer on conductor layer No.1 and the first dielectric layer; Form a guide pillar layer on the second conductor layer, wherein guide pillar layer and the second conductor layer form a concave structure; There is provided one passive device arrange and second conductor layer of electrical ties in concave structure on; Form the second side of coated first dielectric layer of one first adhesive layer, the second conductor layer, passive device, guide pillar layer and metal support plate; Expose one end of guide pillar layer; Form a privates layer in the first adhesive layer with on the one end of the guide pillar layer exposed; Form a welding resisting layer on the first adhesive layer and privates layer; Remove the subregion of metal support plate to form a window, wherein conductor layer No.1 and the first dielectric layer expose from window.
In a second embodiment, the present invention proposes a kind of packaging system, and it comprises a conductor layer No.1, a metal level, one first dielectric layer, one second dielectric layer, one second conductor layer, a guide pillar layer, a passive device, one first adhesive layer, a privates layer and a welding resisting layer.Conductor layer No.1 has a relative first surface and a second surface.Metal level is arranged on the first surface of conductor layer No.1.First dielectric layer is arranged in the subregion of conductor layer No.1, and wherein the first dielectric layer is not exposed to the first surface of conductor layer No.1, and the first dielectric layer is not less than the second surface of conductor layer No.1.Second dielectric layer is arranged on conductor layer No.1 and the first dielectric layer.Second conductor layer is arranged on conductor layer No.1 and the second dielectric layer.Guide pillar layer is arranged on the second conductor layer, and forms a concave structure with the second conductor layer.Passive device arrange and the conductor layer No.1 of electrical ties in concave structure on.First adhesive layer is arranged in the subregion of the first dielectric layer, the second dielectric layer, the second conductor layer and guide pillar layer, and coated passive device, wherein the first adhesive layer is not exposed to one end of guide pillar layer.Privates layer is arranged on one end of the first adhesive layer and guide pillar layer.Welding resisting layer is arranged on the first adhesive layer and privates layer.
In a second embodiment, the present invention proposes a kind of manufacture method of packaging system, and its step comprises: provide a metal support plate, and it has one first relative side and one second side; Form one first dielectric layer on the second side of metal support plate; Form a conductor layer No.1 on the second side of metal support plate, wherein the first dielectric layer is arranged in the subregion of conductor layer No.1, and the first dielectric layer is not less than conductor layer No.1; Form one second dielectric layer on conductor layer No.1 and the first dielectric layer; Form one second conductor layer on conductor layer No.1 and the second dielectric layer; Form a guide pillar layer on the second conductor layer, wherein guide pillar layer and the second conductor layer form a concave structure; There is provided one passive device arrange and the conductor layer No.1 of electrical ties in concave structure on; Form the second side of coated first dielectric layer of one first adhesive layer, conductor layer No.1, the second dielectric layer, the second conductor layer, guide pillar layer, passive device and metal support plate; Expose one end of guide pillar layer; Form a privates layer in the first adhesive layer with on the one end of the guide pillar layer exposed; Form a welding resisting layer on the first adhesive layer and privates layer; Remove the subregion of metal support plate to form a window, wherein conductor layer No.1 and the first dielectric layer expose from window.
The invention has the beneficial effects as follows: the material of main part that adhesive layer (Mold Compound Layer) is coreless substrate (Coreless Substrate) can be used, and utilize plating guide pillar layer to form via and pre-package interconnection system (Mold Interconnect System, MIS) packaged type is taken advantage of a situation and is embedded in substrate by passive device in substrate manufacture, forms the laminated construction burying passive device in simple three-layer metal layer; In addition the sealing (Mold Compound) of lower cost can be used to replace expensive glass fibre basal plate, and three-layer metal layer plating guide pillar laminar flow journey at lower cost replaces the expensive blind buried via hole flow process of four layers of metal level laser, so process time is shorter and flow process is simple.
Accompanying drawing explanation
Fig. 1 is traditional glass fibre basal plate encapsulating structure;
Fig. 2 is the packaging system schematic diagram of first embodiment of the invention;
Fig. 3 is the packaging system manufacture method flow chart of first embodiment of the invention;
Fig. 4 A to Fig. 4 R is that the packaging system of first embodiment of the invention makes schematic diagram;
Fig. 5 is the packaging system schematic diagram of second embodiment of the invention;
Fig. 6 is the packaging system manufacture method flow chart of second embodiment of the invention;
Fig. 7 A to Fig. 7 T is that the packaging system of second embodiment of the invention makes schematic diagram.
Description of reference numerals: 10-glass fibre basal plate encapsulating structure; 100-glass fibre basal plate; 110-groove; 120-via; 130-electronic component; 140-metallic conduction post; 142,144-first metal conducting layer; 146,148-second metal conducting layer; 150-insulating barrier; 20,40-packaging system; 200-conductor layer No.1; 202-first surface; 204-second surface; 210-metal level; 220-first dielectric layer; 222-second dielectric layer; 230-second conductor layer; 240-guide pillar layer; 242-concave structure; 244-subregion; One end of 246-guide pillar layer; 250-passive device; 260-first adhesive layer; 270-privates layer; 280-welding resisting layer; 290-outward element; 292-second adhesive layer; 294-Metal Ball; 30,50-manufacture method; Step S302-step S336; Step S502-step S540; 300-metal support plate; 302-first side; 304-second side; 306-window; 310-first photoresist layer; 320-second photoresist layer; 330-the 3rd photoresist layer; 340-the 4th photoresist layer; 350-the 5th photoresist layer; C-cuts manufacturing process.
Embodiment
Fig. 2 is the packaging system schematic diagram of first embodiment of the invention.Packaging system 20, it comprises conductor layer No.1 200, metal level 210,1 first dielectric layer 220,1 second conductor layer 230, guide pillar layer 240, passive device 250,1 first adhesive layer 260, privates layer 270 and a welding resisting layer 280.Conductor layer No.1 200 has relative first surface 202 and a second surface 204.Metal level 210 is arranged on the first surface 202 of conductor layer No.1 200.First dielectric layer 220 is arranged at in the subregion of conductor layer No.1 200 on conductor layer No.1 200, and wherein the first dielectric layer 220 is not exposed to the first surface 202 of conductor layer No.1 200.Second conductor layer 230 is arranged on conductor layer No.1 200 and the first dielectric layer 220.Guide pillar layer 240 is arranged on the second conductor layer 230, and forms a concave structure 242 with the second conductor layer 230.Passive device 250 arrange and second conductor layer 230 of electrical ties in concave structure 242 on.First adhesive layer 260 is arranged at the second conductor layer 230 with in the subregion 244 of guide pillar layer 240, and coated passive device 250, wherein the first adhesive layer 260 is not exposed to one end 246 of guide pillar layer 240.In the present embodiment, the first adhesive layer 260 is arranged at the second conductor layer 230 with in the Zone Full of guide pillar layer 240, but not as limit.In addition, first adhesive layer 260 has phenolic group resin (Novolac-Based Resin), epoxy (Epoxy-Based Resin), silicone (Silicone-Based Resin) or other suitable coverings, but not as limit.Privates layer 270 is arranged at the first adhesive layer 260 with on one end 246 of guide pillar layer 240.Welding resisting layer 280 is arranged at the first adhesive layer 260 with on privates layer 270.
Wherein, packaging system 20 more can comprise outward element 290,1 second adhesive layer 292 and a multiple Metal Ball 294.Outward element 290 arrange and electrical ties on the first surface 202 of conductor layer No.1 200.Second adhesive layer 292 is arranged at outward element 290 with on the first surface 202 of conductor layer No.1 200.Multiple Metal Ball 294 is arranged on privates layer 270.In one embodiment, outward element 290 is an active member, a passive device, semiconductor wafer or a flexible circuit board, but not as limit.
Fig. 3 is the packaging system manufacture method flow chart of first embodiment of the invention, and Fig. 4 A to Fig. 4 R is that the packaging system of first embodiment of the invention makes schematic diagram.The manufacture method 30 of packaging system 20, its step comprises:
Step S302, as shown in Figure 4 A, provides a metal support plate 300, and it has one first relative side 302 and one second side 304.
Step S304, as shown in Figure 4 B, forms a conductor layer No.1 200 on the second side 304 of metal support plate 300.In the present embodiment, conductor layer No.1 200 can apply electroless plating (Electroless Plating) technology, sputter (Sputtering Coating) technology or evaporation (Thermal Coating) technology, formed through micro-shadow manufacturing process (Photolithography) and etching manufacturing process (Etch Process) again, but not as limit.Wherein conductor layer No.1 200 can be patterning conductor layer, and it comprises at least one cabling and at least one wafer holder, and the material of conductor layer No.1 200 can be metal, such as, be copper.
Step S306, as shown in Figure 4 C, forms second side 304 of one first dielectric layer 220 in metal support plate 300 with on conductor layer No.1 200, and forms one first photoresist layer 310 on the first side 302 of metal support plate 300.In the present embodiment, first dielectric layer 220 is application coating manufacturing process, formed through micro-shadow manufacturing process (Photolithography) and etching manufacturing process (Etch Process) again, first photoresist layer 310 is that application pressing dry film photoresistance manufacturing process formed, but not as limit.
Step S308, as shown in Figure 4 D, forms one second conductor layer 230 on conductor layer No.1 200 and the first dielectric layer 220.In the present embodiment, second conductor layer 230 can apply electroless plating (ElectrolessPlating) technology, sputter (Sputtering Coating) technology or evaporation (Thermal Coating) technology, formed through micro-shadow manufacturing process (Photolithography) and etching manufacturing process (Etch Process) again, but not as limit.Wherein the second conductor layer 230 can be patterning conductor layer, and it comprises at least one cabling, and is formed corresponding on the conductor layer No.1 200 exposed.
Step S310, as shown in Figure 4 E, forms one second photoresist layer 320 on the first dielectric layer 220 and the second conductor layer 230.In the present embodiment, the second photoresist layer 320 is that application pressing dry film photoresistance manufacturing process formed, but not as limit.
Step S312, as illustrated in figure 4f, removes the subregion of the second photoresist layer 320 to expose the second conductor layer 230.In the present embodiment, the subregion removing the second photoresist layer 320 is that micro-shadow manufacturing process (Photolithography) technology of application reached, but not as limit.
Step S314, as shown in Figure 4 G, forms a guide pillar layer 240 on the second conductor layer 230.In the present embodiment, guide pillar layer 240 is that application plating (Electrolytic Plating) technology formed, but not as limit.Wherein, guide pillar layer 240 comprises at least one conductive pole, and it is formed on the cabling corresponding to the second conductor layer 230, and the material of guide pillar layer 240 can be metal, such as, be copper.
Step S316, as shown at figure 4h, remove the first photoresist layer 310, second photoresist layer 320 and form conductor layer No.1 200 on the second side 304 of metal support plate 300, form second side 304 of the first dielectric layer 220 in metal support plate 300 with on conductor layer No.1 200, form the second conductor layer 230 on conductor layer No.1 200 and the first dielectric layer 220, and form guide pillar layer 240 on the second conductor layer 230, wherein guide pillar layer 240 and the second conductor layer 230 form a concave structure 242.
Step S318, as shown in fig. 41, provide one passive device 250 arrange and second conductor layer 230 of electrical ties in concave structure 242 on.
Step S320, as shown in fig. 4j, forms the second side 304 of coated first dielectric layer 220, second conductor layer 230 of one first adhesive layer 260, guide pillar layer 240, passive device 250 and metal support plate 300.In the present embodiment, first adhesive layer 260 is that the encapsulation technology of application metaideophone shaping (Transfer Molding) formed, the material of the first adhesive layer 260 can comprise phenolic group resin (Novolac-Based Resin), epoxy (Epoxy-Based Resin), silicone (Silicone-Based Resin) or other suitable coverings, at high temperature and pressure, with coated first dielectric layer 220, second conductor layer 230 of liquid condition, guide pillar layer 240 and passive device 250, after its solidification, form the first adhesive layer 260.First adhesive layer 260 also can comprise suitable filler, such as, be the silicon dioxide of powdery.
In another embodiment, the encapsulation technology also can applying injection moulding (Injection Molding) or compression forming (Compression Molding) forms the first adhesive layer 260.
Wherein, the step forming the first adhesive layer 260 can comprise: provide a covering, and wherein covering has the silicon dioxide of resin and powdery.Heating covering is to liquid condition.The covering that injection is in a liquid state is on the second side 304 of metal support plate 300, and covering is coated first dielectric layer 220, second conductor layer 230, guide pillar layer 240 and passive device 250 at high temperature and pressure.Solidification covering, makes covering form the first adhesive layer 260, but the step of formation the first adhesive layer 260 is not as limit.
Step S322, as shown in Figure 4 K, exposes one end 246 of guide pillar layer 240.In the present embodiment, exposing guide pillar layer 240 is parts that application grinding (Grinding) mode removes the first adhesive layer 260, to expose one end 246 of guide pillar layer 240.Better but non-exclusively, one end 246 of guide pillar layer 240 and the first adhesive layer 260 substantial alignment are such as coplanar.In another embodiment, while formation first adhesive layer 260, one end 246 of guide pillar layer 240 can be exposed, and without the need to removing any part of the first adhesive layer 260.
Step S324, as illustrated in fig. 4l, forms a privates layer 270 in the first adhesive layer 260 with on the one end 246 of the guide pillar layer 240 exposed.In one embodiment, privates layer 270 can be applied electroless plating (Electroless Plating) technology, sputter (Sputtering Coating) technology or evaporation (Thermal Coating) technology and formed, but not as limit.Wherein privates layer 270 can be patterning conductor layer, and it comprises at least one cabling, and is formed on the one end 246 corresponding to the guide pillar layer 240 exposed, and the material of privates layer 270 can be metal, such as, be copper.
Step S326, as shown in fig. 4m, forms a welding resisting layer 280 in the first adhesive layer 260 with on privates layer 270, and the privates layer 270 of exposed portion.Wherein, welding resisting layer 280 has effect of each cabling electricity of insulation privates layer 270.
Step S328, as shown in Fig. 4 N, remove the subregion of metal support plate 300 to form a window 306, wherein conductor layer No.1 200 and the first dielectric layer 220 expose from window 306.In the present embodiment, the subregion removing metal support plate 300 is that the micro-shadow manufacturing process (Photolithography) of application reached with etching manufacturing process (Etch Process), the cabling of conductor layer No.1 200 and wafer holder also can be exposed from window 306, in addition, namely the subregion left by metal support plate 300 forms a metal level 210.
Step S330, as shown in Fig. 4 O, provide one outward element 290 arrange and electrical ties on the first surface 202 of conductor layer No.1 200.In one embodiment, outward element 290 is an active member, a passive device, semiconductor wafer or a flexible circuit board, but not as limit.
Step S332, as shown in Fig. 4 P, forms one second adhesive layer 292 and is coated on outward element 290 with on the first surface 202 of conductor layer No.1 200.In the present embodiment, second adhesive layer 292 is that the encapsulation technology of application metaideophone shaping (Transfer Molding) formed, the material of the second adhesive layer 292 can comprise phenolic group resin (Novolac-Based Resin), epoxy (Epoxy-Based Resin), silicone (Silicone-Based Resin) or other suitable coverings, at high temperature and pressure, with the coated outward element 292 of liquid condition with on the first surface 202 of conductor layer No.1 200, after its solidification, form the second adhesive layer 292.Second adhesive layer 292 also can comprise suitable filler, such as, be the silicon dioxide of powdery.
In another embodiment, the encapsulation technology also can applying injection moulding (Injection Molding) or compression forming (Compression Molding) forms the second adhesive layer 292.
Step S334, as shown in Fig. 4 Q, forms multiple Metal Ball 294 on privates layer 270.The material of each Metal Ball 294 can be metal, such as, be copper.
Step S336, as shown in Fig. 4 R, finally carry out cutting manufacturing process C again and form packaging system 20 as shown in Figure 2 in one of them layers such as conductor layer No.1 200, metal level 210, first dielectric layer 220, second conductor layer 230, first adhesive layer 260, privates layer 270 or welding resisting layers 280.
To illustrate at this, the packaging system 20 of first embodiment of the invention, it utilizes the material of main part that the first adhesive layer is coreless substrate to replace expensive traditional glass fibre basal plate, and three-layer metal layer plating guide pillar laminar flow journey at lower cost replaces expensive traditional blind buried via hole flow process of four layers of metal level laser, so process time, shorter and flow process was simple, therefore significantly can reduce cost of manufacture.
Fig. 5 is the packaging system schematic diagram of second embodiment of the invention.Packaging system 40 is substantially similar to the structure of the packaging system 20 of first embodiment of the invention, and it comprises conductor layer No.1 200, metal level 210,1 first dielectric layer 220,1 second dielectric layer 222,1 second conductor layer 230, guide pillar layer 240, passive device 250,1 first adhesive layer 260, privates layer 270 and a welding resisting layer 280.Conductor layer No.1 200 has relative first surface 202 and a second surface 204.Metal level 210 is arranged on the first surface 202 of conductor layer No.1 200.First dielectric layer 220 is arranged in the subregion of conductor layer No.1 200, and first surface 202, first dielectric layer 220 that wherein the first dielectric layer 220 is not exposed to conductor layer No.1 200 is not less than the second surface 204 of conductor layer No.1 200.Second dielectric layer 222 is arranged on conductor layer No.1 200 and the first dielectric layer 220.Second conductor layer 230 is arranged on conductor layer No.1 200 and the second dielectric layer 222.Guide pillar layer 240 is arranged on the second conductor layer 230, and forms a concave structure 242 with the second conductor layer 230.Passive device 250 arrange and the conductor layer No.1 200 of electrical ties in concave structure 242 on.First adhesive layer 260 is arranged at the first dielectric layer 220, second dielectric layer 222, second conductor layer 230 with in the subregion 244 of guide pillar layer 240, and coated passive device 250, wherein the first adhesive layer 260 is not exposed to one end 246 of guide pillar layer 240.In the present embodiment, the first adhesive layer 260 is arranged at the first dielectric layer 220, second dielectric layer 222, second conductor layer 230 with in the Zone Full of guide pillar layer 240, but not as limit.In addition, first adhesive layer 260 has phenolic group resin (Novolac-Based Resin), epoxy (Epoxy-Based Resin), silicone (Silicone-Based Resin) or other suitable coverings, but not as limit.Privates layer 270 is arranged at the first adhesive layer 260 with on one end 246 of guide pillar layer 240.Welding resisting layer 280 is arranged at the first adhesive layer 260 with on privates layer 270.
Wherein, packaging system 40 more can comprise outward element 290,1 second adhesive layer 292 and a multiple Metal Ball 294.Outward element 290 arrange and electrical ties on the first surface 202 of conductor layer No.1 200.Second adhesive layer 292 is arranged at outward element 290 with on the first surface 202 of conductor layer No.1 200.Multiple Metal Ball 294 is arranged on privates layer 270.In one embodiment, outward element 290 is an active member, a passive device, semiconductor wafer or a flexible circuit board, but not as limit.
Fig. 6 is the packaging system manufacture method flow chart of second embodiment of the invention, and Fig. 7 A to Fig. 7 T is that the packaging system of second embodiment of the invention makes schematic diagram.The manufacture method 50 of packaging system 40, its step comprises:
Step S502, as shown in Figure 7 A, provides a metal support plate 300, and it has one first relative side 302 and one second side 304.
Step S504, as shown in Figure 7 B, formed one first dielectric layer 220 on the second side 304 of metal support plate 300 with one the 3rd photoresist layer 330 on the first side 302 of metal support plate.In the present embodiment, the first dielectric layer 220 is that application coating manufacturing process formed, and the 3rd photoresist layer 330 is that application pressing dry film photoresistance manufacturing process formed, but not as limit.
Step S506, as seen in figure 7 c, form a conductor layer No.1 200 on the second side 304 of metal support plate 300, wherein the first dielectric layer 220 is arranged in the subregion of conductor layer No.1 200, and the first dielectric layer 220 is not less than conductor layer No.1 200.In the present embodiment, conductor layer No.1 200 is that application plating (Electrolytic Plating) technology formed, but not as limit.Wherein conductor layer No.1 200 can be patterning conductor layer, and it comprises at least one cabling and at least one wafer holder, and the material of conductor layer No.1 200 can be metal, such as, be copper.
Step S508, as illustrated in fig. 7d, forms one second dielectric layer 222 on conductor layer No.1 200 and the first dielectric layer 220.In the present embodiment, the second dielectric layer 222 is that application coating manufacturing process formed, but not as limit.
Step S510, as seen in figure 7e, forms one the 4th photoresist layer 340 on conductor layer No.1 200, first dielectric layer 220 and the second dielectric layer 222.In the present embodiment, the 4th photoresist layer 340 is application pressing dry film photoresistance manufacturing process, then formed through micro-shadow manufacturing process (Photolithography), but not as limit.
Step S512, as shown in Figure 7 F, forms one second conductor layer 230 on conductor layer No.1 200 and the second dielectric layer 222.In the present embodiment, the second conductor layer 230 is that application plating (Electrolytic Plating) technology formed, but not as limit.Wherein, the second conductor layer 230 comprises at least one cabling, and it is formed on the cabling corresponding to conductor layer No.1 200, and the material of the second conductor layer 230 can be metal, such as, be copper.
Step S514, as shown in Figure 7 G, forms one the 5th photoresist layer 350 on the 4th photoresist layer 340 and the second conductor layer 230.In the present embodiment, the 5th photoresist layer 350 is that application pressing dry film photoresistance manufacturing process formed, but not as limit.
Step S516, as shown in fig. 7h, removes the subregion of the 5th photoresist layer 350 to expose the second conductor layer 230.In the present embodiment, the subregion removing the 5th photoresist layer 350 is that micro-shadow manufacturing process (Photolithography) technology of application reached, but not as limit.
Step S518, as shown in Figure 7 I, forms a guide pillar layer 240 on the second conductor layer 230.In the present embodiment, guide pillar layer 240 is that application plating (Electrolytic Plating) technology formed, but not as limit.Wherein, guide pillar layer 240 comprises at least one conductive pole, and it is formed on the cabling corresponding to the second conductor layer 230, and the material of the second conductor layer 230 can be metal, such as, be copper.
Step S520, as shown in figure 7j, remove the 4th photoresist layer 340 and the 5th photoresist layer 350 and form the first dielectric layer 220 on the second side 304 of metal support plate 300, form conductor layer No.1 200 on the second side 302 of metal support plate 300, wherein the first dielectric layer 220 is arranged in the subregion of conductor layer No.1 200, first dielectric layer 220 is not less than conductor layer No.1 200, form the second dielectric layer 222 on conductor layer No.1 200 and the first dielectric layer 220, form the second conductor layer 230 on conductor layer No.1 220 and the second dielectric layer 222, and form guide pillar layer 240 on conductor layer No.1 200, wherein guide pillar layer 240 and the second conductor layer 230 form a concave structure 242.
Step S522, as shown in fig. 7k, provide one passive device 250 arrange and the conductor layer No.1 200 of electrical ties in concave structure 222 on.
Step S524, as shown in fig. 7l, forms the second side 304 of coated first dielectric layer 220 of one first adhesive layer 260, conductor layer No.1 200, second dielectric layer 222, second conductor layer 230, guide pillar layer 240, passive device 250 and metal support plate 300.In the present embodiment, first adhesive layer 260 is that the encapsulation technology of application metaideophone shaping (Transfer Molding) formed, the material of the first adhesive layer 260 can comprise phenolic group resin (Novolac-Based Resin), epoxy (Epoxy-Based Resin), silicone (Silicone-Based Resin) or other suitable coverings, at high temperature and pressure, with coated first dielectric layer 220 of liquid condition, conductor layer No.1 200, second dielectric layer 222, second conductor layer 230, guide pillar layer 240 and passive device 250, the first adhesive layer 260 is formed after its solidification.First adhesive layer 260 also can comprise suitable filler, such as, be the silicon dioxide of powdery.
In another embodiment, the encapsulation technology also can applying injection moulding (Injection Molding) or compression forming (Compression Molding) forms the first adhesive layer 260.
Wherein, the step forming the first adhesive layer 260 can comprise: provide a covering, and wherein covering has the silicon dioxide of resin and powdery.Heating covering is to liquid condition.The covering that injection is in a liquid state is on the second side 304 of metal support plate 300, and covering is coated first dielectric layer 220, conductor layer No.1 200, second dielectric layer 222, second conductor layer 230, guide pillar layer 240 and passive device 250 at high temperature and pressure.Solidification covering, makes covering form the first adhesive layer 260, but the step of formation the first adhesive layer 260 is not as limit.
Step S526, as shown in Fig. 7 M, exposes one end 246 of guide pillar layer 240.In the present embodiment, exposing guide pillar layer 240 is parts that application grinding (Grinding) mode removes the first adhesive layer 260, to expose one end 246 of guide pillar layer 240.Better but non-exclusively, one end 246 of guide pillar layer 240 and the first adhesive layer 260 substantial alignment are such as coplanar.In another embodiment, while formation first adhesive layer 260, one end 246 of guide pillar layer 240 can be exposed, and without the need to removing any part of the first adhesive layer 260.
Step S528, as shown in figure 7n, forms a privates layer 270 in the first adhesive layer 260 with on the one end 246 of the guide pillar layer 240 exposed.In one embodiment, privates layer 270 can be applied electroless plating (Electroless Plating) technology, sputter (Sputtering Coating) technology or evaporation (Thermal Coating) technology and formed, but not as limit.Wherein privates layer 270 can be patterning conductor layer, and it comprises at least one cabling, and is formed on the one end 246 corresponding to the guide pillar layer 240 exposed, and the material of privates layer 270 can be metal, such as, be copper.
Step S530, as shown in figure 7o, forms a welding resisting layer 280 in the first adhesive layer 260 with on privates layer 270, and the privates layer 270 of exposed portion.Wherein, welding resisting layer 280 has effect of each cabling electricity of insulation privates layer 270.
Step S532, as shown in figure 7p, remove the subregion of metal support plate 300 to form a window 306, wherein conductor layer No.1 200 and the first dielectric layer 220 expose from window 306.In the present embodiment, the subregion removing metal support plate 300 is that the micro-shadow manufacturing process (Photolithography) of application reached with etching manufacturing process (Etch Process), the cabling of conductor layer No.1 200 and wafer holder also can be exposed from window 306, in addition, namely the subregion left by metal support plate 300 forms a metal level 210.
Step S534, as shown in figure 7q, provide one outward element 290 arrange and electrical ties on the first surface 202 of conductor layer No.1 200.In one embodiment, outward element 290 is an active member, a passive device, semiconductor wafer or a flexible circuit board, but not as limit.
Step S536, as shown in figure 7r, forms one second adhesive layer 292 and is coated on outward element 290 with on the first surface 202 of conductor layer No.1 200.In the present embodiment, second adhesive layer 292 is that the encapsulation technology of application metaideophone shaping (Transfer Molding) formed, the material of the second adhesive layer 292 can comprise phenolic group resin (Novolac-Based Resin), epoxy (Epoxy-Based Resin), silicone (Silicone-Based Resin) or other suitable coverings, at high temperature and pressure, with the coated outward element 290 of liquid condition with on the first surface 202 of conductor layer No.1 200, after its solidification, form the second adhesive layer 292.Second adhesive layer 292 also can comprise suitable filler, such as, be the silicon dioxide of powdery.
In another embodiment, the encapsulation technology also can applying injection moulding (Injection Molding) or compression forming (Compression Molding) forms the second adhesive layer 292.
Step S538, as shown in Fig. 7 S, forms multiple Metal Ball 294 on privates layer 270.The material of each Metal Ball 294 can be metal, such as, be copper.
Step S540, as shown in figure 7t, finally carry out cutting manufacturing process C again and form packaging system 40 as shown in Figure 5 in one of them layers such as conductor layer No.1 200, metal level 210, first dielectric layer 220, second conductor layer 230, first adhesive layer 260, privates layer 270 or welding resisting layers 280.
To illustrate at this, the packaging system 40 of second embodiment of the invention is compared to the packaging system 20 of first embodiment of the invention, it passive device is arranged on position compared with on the conductor layer No.1 lower than the second conductor layer, therefore can reduce height and the manufacturing process difficulty of plating guide pillar layer.In addition, therefore the thickness forming the first adhesive layer also can reduce with the thickness of grinding the first adhesive layer, allows and make more simple and save cost.
In sum, the packaging system of first embodiment of the invention, it utilizes the material of main part that the first adhesive layer is coreless substrate to replace expensive traditional glass fibre basal plate, and three-layer metal layer plating guide pillar laminar flow journey at lower cost replaces expensive traditional blind buried via hole flow process of four layers of metal level laser, so process time, shorter and flow process was simple, significantly cost of manufacture can be reduced.
In addition, the packaging system of second embodiment of the invention, it passive device is arranged on position compared with on the conductor layer No.1 lower than the second conductor layer, therefore can reduce height and the manufacturing process difficulty of plating guide pillar layer.In addition, therefore the thickness forming the first adhesive layer also can reduce with the thickness of grinding the first adhesive layer, allows and make more simple and save cost.
But above-described specific embodiment, only release Characteristic of the present invention for example, but not of the present inventionly implement category for limiting, under not departing from the spirit and technology category that the present invention takes off, the disclosed content of any utilization and the equivalence that completes changes and modify, all still should be following claim and contained.
Claims (18)
1. a packaging system, is characterized in that, comprising:
One conductor layer No.1, it has a relative first surface and a second surface;
One metal level, it is arranged on this first surface of this conductor layer No.1;
One first dielectric layer, it is arranged at in the subregion of this conductor layer No.1 on this conductor layer No.1,
Wherein this first dielectric layer is not exposed to this first surface of this conductor layer No.1;
One second conductor layer, it is arranged on this conductor layer No.1 and this first dielectric layer;
One guide pillar layer, it is arranged on this second conductor layer, and forms a concave structure with this second conductor layer;
One passive device, its arrange and electrical ties this second conductor layer in this concave structure on;
One first adhesive layer, it is arranged in the subregion of this second conductor layer and this guide pillar layer, and this passive device coated, wherein this first adhesive layer is not exposed to one end of this guide pillar layer;
One privates layer, it is arranged on one end of this first adhesive layer and this guide pillar layer; And
One welding resisting layer, it is arranged on this first adhesive layer and this privates layer.
2. packaging system as claimed in claim 1, is characterized in that, more comprise:
One outward element, its arrange and electrical ties on this first surface of this conductor layer No.1;
One second adhesive layer, it is arranged on this first surface of this outward element and this conductor layer No.1; And
Multiple Metal Ball, it is arranged on this privates layer.
3. packaging system as claimed in claim 2, it is characterized in that, this outward element is an active member, a passive device, semiconductor wafer or a flexible circuit board.
4. packaging system as claimed in claim 1, it is characterized in that, this first adhesive layer has phenolic group resin, epoxy or silicone.
5. a manufacture method for packaging system, is characterized in that, step comprises:
There is provided a metal support plate, it has one first relative side and one second side;
Form a conductor layer No.1 on this second side of this metal support plate;
Form one first dielectric layer on this second side and this conductor layer No.1 of this metal support plate;
Form one second conductor layer on this conductor layer No.1 and this first dielectric layer;
Form a guide pillar layer on this second conductor layer, wherein this guide pillar layer and this second conductor layer form a concave structure;
There is provided one passive device arrange and electrical ties this second conductor layer in this concave structure on;
Form this second side of one first adhesive layer this first dielectric layer coated, this second conductor layer, this passive device, this guide pillar layer and this metal support plate;
Expose one end of this guide pillar layer;
Form a privates layer in this first adhesive layer with on the one end of this guide pillar layer exposed;
Form a welding resisting layer on this first adhesive layer and this privates layer; And
Remove the subregion of this metal support plate to form a window, wherein this conductor layer No.1 and this first dielectric layer expose from this window.
6. manufacture method as claimed in claim 5, is characterized in that, more comprise:
There is provided one outward element arrange and electrical ties on this first surface of this conductor layer No.1;
Forming one second adhesive layer is coated on this first surface of this outward element and this conductor layer No.1; And
Form multiple Metal Ball on this privates layer.
7. manufacture method as claimed in claim 5, it is characterized in that, the step forming this first adhesive layer comprises:
There is provided a covering, wherein this covering has the silicon dioxide of resin and powdery;
Heat this covering to liquid condition;
This covering that injection is in a liquid state is on this second side of this metal support plate, and this covering is this first dielectric layer coated, this second conductor layer, this passive device and this guide pillar layer at high temperature and pressure; And
Solidify this covering, make this covering form this first adhesive layer.
8. manufacture method as claimed in claim 6, it is characterized in that, this outward element is an active member, a passive device, semiconductor wafer or a flexible circuit board.
9. manufacture method as claimed in claim 5, it is characterized in that, this first adhesive layer has and has phenolic group resin, epoxy or silicone.
10. a packaging system, is characterized in that, comprising:
One conductor layer No.1, it has a relative first surface and a second surface;
One metal level, it is arranged on this first surface of this conductor layer No.1;
One first dielectric layer, it is arranged in the subregion of this conductor layer No.1, and wherein this first dielectric layer is not exposed to this first surface of this conductor layer No.1, and this first dielectric layer is not less than this second surface of this conductor layer No.1;
One second dielectric layer, it is arranged on this conductor layer No.1 and this first dielectric layer;
One second conductor layer, it is arranged on this conductor layer No.1 and this second dielectric layer;
One guide pillar layer, it is arranged on this second conductor layer, and forms a concave structure with this second conductor layer;
One passive device, its arrange and electrical ties this conductor layer No.1 in this concave structure on;
One first adhesive layer, it is arranged in the subregion of this first dielectric layer, this second dielectric layer, this second conductor layer and this guide pillar layer, and this passive device coated, wherein this first adhesive layer is not exposed to one end of this guide pillar layer;
One privates layer, it is arranged on one end of this first adhesive layer and this guide pillar layer; And
One welding resisting layer, it is arranged on this first adhesive layer and this privates layer.
11. packaging systems as claimed in claim 10, is characterized in that, more comprise:
One outward element, its arrange and electrical ties on this first surface of this conductor layer No.1;
One second adhesive layer, it is arranged on this first surface of this outward element and this conductor layer No.1; And
Multiple Metal Ball, it is arranged on this privates layer.
12. packaging systems as claimed in claim 11, is characterized in that, this outward element is an active member, a passive device, semiconductor wafer or a flexible circuit board.
13. packaging systems as claimed in claim 10, it is characterized in that, this first adhesive layer has phenolic group resin, epoxy or silicone.
The manufacture method of 14. 1 kinds of packaging systems, is characterized in that, step comprises:
There is provided a metal support plate, it has one first relative side and one second side;
Form one first dielectric layer on this second side of this metal support plate;
Form a conductor layer No.1 on this second side of this metal support plate, wherein this first dielectric layer is arranged in the subregion of this conductor layer No.1, and this first dielectric layer is not less than this conductor layer No.1;
Form one second dielectric layer on this conductor layer No.1 and this first dielectric layer;
Form one second conductor layer on this conductor layer No.1 and this second dielectric layer;
Form a guide pillar layer on this second conductor layer, wherein this guide pillar layer and this second conductor layer form a concave structure;
There is provided one passive device arrange and electrical ties this conductor layer No.1 in this concave structure on;
Form this second side of one first adhesive layer this first dielectric layer coated, this conductor layer No.1, this second dielectric layer, this second conductor layer, this guide pillar layer, this passive device and this metal support plate;
Expose one end of this guide pillar layer;
Form a privates layer in this first adhesive layer with on the one end of this guide pillar layer exposed;
Form a welding resisting layer on this first adhesive layer and this privates layer; And
Remove the subregion of this metal support plate to form a window, wherein this conductor layer No.1 and this first dielectric layer expose from this window.
15. manufacture methods as claimed in claim 14, is characterized in that, more comprise:
There is provided one outward element arrange and electrical ties on this first surface of this conductor layer No.1;
Forming one second adhesive layer is coated on this first surface of this outward element and this conductor layer No.1; And
Form multiple Metal Ball on this privates layer.
16. manufacture methods as claimed in claim 14, it is characterized in that, the step forming this first adhesive layer comprises:
There is provided a covering, wherein this covering has the silicon dioxide of resin and powdery;
Heat this covering to liquid condition;
This covering that injection is in a liquid state is on this second side of this metal support plate, and this covering is this first dielectric layer coated, this conductor layer No.1, this second dielectric layer, this second conductor layer, this guide pillar layer and this passive device at high temperature and pressure; And
Solidify this covering, make this covering form this first adhesive layer.
17. manufacture methods as claimed in claim 15, is characterized in that, this outward element is an active member, a passive device, semiconductor wafer or a flexible circuit board.
18. manufacture methods as claimed in claim 14, it is characterized in that, this first adhesive layer has and has phenolic group resin, epoxy or silicone.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201410051473.4A CN104851868B (en) | 2014-02-14 | 2014-02-14 | Packaging system and preparation method thereof |
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| CN201410051473.4A CN104851868B (en) | 2014-02-14 | 2014-02-14 | Packaging system and preparation method thereof |
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|---|---|---|---|---|
| TW200807661A (en) * | 2006-07-28 | 2008-02-01 | Phoenix Prec Technology Corp | Circuit board structure having passive component and stack structure thereof |
| CN202839599U (en) * | 2012-08-23 | 2013-03-27 | 江阴长电先进封装有限公司 | Chip-embedded-type three-dimensional wafer-level packaging structure |
| US20130186676A1 (en) * | 2012-01-20 | 2013-07-25 | Futurewei Technologies, Inc. | Methods and Apparatus for a Substrate Core Layer |
| CN103515252A (en) * | 2012-06-21 | 2014-01-15 | 新科金朋有限公司 | Semiconductor device and method of forming an embedded SOP fan-out package |
| TW201405673A (en) * | 2012-07-18 | 2014-02-01 | 矽品精密工業股份有限公司 | Method of forming chip scale package |
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Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TW200807661A (en) * | 2006-07-28 | 2008-02-01 | Phoenix Prec Technology Corp | Circuit board structure having passive component and stack structure thereof |
| US20130186676A1 (en) * | 2012-01-20 | 2013-07-25 | Futurewei Technologies, Inc. | Methods and Apparatus for a Substrate Core Layer |
| CN103515252A (en) * | 2012-06-21 | 2014-01-15 | 新科金朋有限公司 | Semiconductor device and method of forming an embedded SOP fan-out package |
| TW201405673A (en) * | 2012-07-18 | 2014-02-01 | 矽品精密工業股份有限公司 | Method of forming chip scale package |
| CN202839599U (en) * | 2012-08-23 | 2013-03-27 | 江阴长电先进封装有限公司 | Chip-embedded-type three-dimensional wafer-level packaging structure |
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