CN104851425B - A kind of high definition speech recognition system based on symmetrical transistor amplifier - Google Patents
A kind of high definition speech recognition system based on symmetrical transistor amplifier Download PDFInfo
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- CN104851425B CN104851425B CN201510290828.XA CN201510290828A CN104851425B CN 104851425 B CN104851425 B CN 104851425B CN 201510290828 A CN201510290828 A CN 201510290828A CN 104851425 B CN104851425 B CN 104851425B
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Abstract
The invention discloses a kind of high definition speech recognition systems based on symmetrical transistor amplifier, it is by voice acquisition module (8), main control unit (1), sound bank (2), characteristic extracting module (3), the speech recognition module (4) being connected with main control unit (1), the audio coding module (7) being connected with voice acquisition module (8), the preprocessing module (6) being connected with audio coding module (7), and endpoint detection module (5) composition being connected with preprocessing module (6)；It is characterized in that：Symmetrical transistor amplifier (9) are also serially connected between endpoint detection module (5) and main control unit (1)；The present invention passes through the effect of symmetrical transistor amplifier, can carry out distortionless amplification to signal, the present invention is facilitated to identify, then improves accuracy of identification height of the invention in this way, misrecognition is avoided to bring unnecessary trouble.
Description
Technical field
The present invention relates to a kind of speech recognition system, in particular to a kind of high definitions based on symmetrical transistor amplifier
Speech recognition system.
Background technique
Speech recognition starts to move towards market from laboratory in recent years as a cross discipline.It is continued to develop in science and technology
Today, speech recognition technology have entered industry, household electrical appliances, communication, automotive electronics, medical treatment, home services, consumer electronics production extensively
The every field such as product bring huge change to people's lives and production.However, voice used in currently on the market is known
Other its accuracy of identification of system is not high, is easy to appear the phenomenon of wrong identification, has brought very big trouble.
Summary of the invention
It is an object of the invention to overcome the defect that traditional its accuracy of identification of speech recognition system is not high at present, provide
A kind of high definition speech recognition system based on symmetrical transistor amplifier.
The purpose of the invention is achieved by the following technical solution：A kind of high definition language based on symmetrical transistor amplifier
Sound identifying system comprising voice acquisition module, main control unit, the sound bank being connected with main control unit, characteristic extracting module,
Speech recognition module, the audio coding module being connected with voice acquisition module, the pretreatment being connected with audio coding module
Module, and the endpoint detection module being connected with preprocessing module, in order to reach the purpose of the present invention, the present invention is examined in endpoint
It surveys between module and main control unit and is also serially connected with symmetrical transistor amplifier.
Further, the symmetrical transistor amplifier is by triode Q7, triode Q8, unidirectional thyristor D12,
Unidirectional thyristor D13, cathode is connected with the pole P of unidirectional thyristor D12, anode then after resistance R15 with unidirectional thyristor D12
The capacitor pole C7, N that is connected of the pole N be connected with the anode of capacitor C7, two poles that the pole P is then connected with the base stage of triode Q7
Pipe D10, cathode is connected with the base stage of triode Q7, the anode then electricity as the input terminal of the symmetrical expression transistor amplifier
Hold C5, the resistance R17 that one end is connected with the collector of triode Q7, the other end is then connected with+12V voltage, one end and three
The pole resistance R18, N that the emitter of pole pipe Q7 is connected, the other end is then connected after resistance R19 with the emitter of triode Q8
It is connected with the anode of capacitor C5, the diode D9 that the pole P is then connected with the anode of capacitor C6, the pole P of one end and diode D9
Be connected, the resistance pole R16, N that the other end is then connected with the pole N of unidirectional thyristor D13 is connected with the base stage of triode Q8,
The diode D11 and one end that the pole P is then connected with the anode of capacitor C8 be connected with the collector of triode Q8, the other end
Then connect the resistance R20 composition of -12V voltage；The cathode of the capacitor C6 is connected with the base stage of triode Q8, the capacitor C8's
Cathode is connected with the pole P of unidirectional thyristor D13；The N of the pole N of the unidirectional thyristor D12 and unidirectional thyristor D13 extremely with
Resistance R18 is connected with the tie point of resistance R19, the control electrode and the control electrode phase of unidirectional thyristor D13 of unidirectional thyristor D12
Output end while connection as the symmetrical expression transistor amplifier.
The preprocessing module then by triode trigger circuit, the detection circuit being connected with triode trigger circuit and
Self-maintained circuit composition；The self-maintained circuit is also connected with the detection circuit.
The triode trigger circuit is by triode Q1, triode Q2, triode Q3, and anode is after diode D2 with three
The capacitor pole C1, N that the base stage of pole pipe Q3 is connected, cathode is then connected with self-maintained circuit is connected with the base stage of triode Q2
It connects, the diode D1 that the pole P is then connected with the collector of triode Q1, one end is connected with the base stage of triode Q2, the other end
The resistance R3 being then connected after resistance R4 with the collector of triode Q3, anode be connected with the base stage of triode Q1, cathode
The capacitor C2 being then connected after resistance R1 with detection circuit, one end is connected with the base stage of triode Q3, the other end is then with three
The resistance R2 that the emitter of pole pipe Q2 is connected, the pole capacitor C3, P being in parallel with resistance R2 is sequentially through diode D3 and resistance R5
It is connected afterwards with the emitter of triode Q3, the diode D4 composition that the pole N is then connected with self-maintained circuit；The triode
The emitter ground connection of Q1, its collector are then used as the input terminal of the triode trigger circuit；The collector of the triode Q2 with
Its base stage is connected, its emitter is then connected with self-maintained circuit；The emitter of triode Q3 is also connected with detection circuit
It connects；The tie point of resistance R3 and resistance R4 connect+12V voltage while being connected with detection circuit.
The detection circuit is made of detection chip U, capacitor C4, resistance R6, resistance R7 and diode D5；The electricity
One end of resistance R6 is connected with the emitter of triode Q3, its other end is then connected with the LBI pin of detection chip U；Capacitor
The anode of C4 is connected with the tie point of resistance R3 and resistance R4, its cathode is then connected with the VBAT pin of detection chip U；Two
The pole P of pole pipe D5 is connected with the LBO pin of detection chip U, its pole N is then connected after resistance R7 with self-maintained circuit；
The RLIM pin of the detection chip U is connected after resistance R1 with the cathode of capacitor C2, its GND pin ground connection, FB pin then
It is connected with self-maintained circuit and its LX pin is then connected with the pole N of diode D5.
The self-maintained circuit is by triode Q4, triode Q5, triode Q6, the XOR gate pole IC1, N and diode
The pole P of the pole N of D4 is connected, the pole P is then connected with the first input end of XOR gate IC1 the diode pole D6, N and diode D6
It is connected, the diode D7 of the pole P ground connection, one end is connected with the first input end of XOR gate IC1, the other end is then sequentially through resistance
The resistance R8 being connected after R9 and resistance R14 with the base stage of triode Q6 is serially connected in the first input end and second of XOR gate IC1
Resistance R10 between input terminal, one end is connected with the collector of triode Q4, the other end then with the collector phase of triode Q5
The resistance R11 of connection, one end is connected with the emitter of triode Q4, the other end is then connected with the output end of XOR gate IC1
The resistance pole R13, N be connected after resistance R7 with the pole N of diode D5, the pole P is then connected with the collector of triode Q6
Diode D8 and one end be connected with the pole N of diode D8, the resistance that the other end is then connected with the emitter of triode Q5
R12 composition；The first input end of the XOR gate IC1 is connected with the cathode of the cathode of capacitor C1 and capacitor C3 respectively, it
Output end is then used as the output end of the self-maintained circuit；The base stage of the triode Q4 and the first input end of XOR gate IC1
It is connected, its collector is then connected with the base stage of triode Q5；The collector of the triode Q5 then respectively with detection chip U
FB pin and the pole N of diode D8 be connected；The emitter of triode Q6 is grounded.
The detection chip U is SP6648 integrated circuit.
The present invention compared with the prior art, has the following advantages that and beneficial effect：
(1) identification distance of the invention is remote, people do not needed during identification it is in close proximity, as long as issuing at a distance
The sound present invention can recognize.
(2) present invention can carry out distortionless amplification, side by the effect of symmetrical transistor amplifier to signal
Just the present invention identifies, then improves accuracy of identification height of the invention in this way, avoids misrecognition from bringing unnecessary
Trouble.
(3) the configuration of the present invention is simple, and low energy consumption, and wide model is suitble to promote.
Detailed description of the invention
Fig. 1 is overall structure diagram of the invention.
Fig. 2 is preprocessing module electrical block diagram of the invention.
Fig. 3 is symmetrical transistor amplifier structural schematic diagram of the invention.
Specific embodiment
The present invention is described in further detail below with reference to embodiment, embodiments of the present invention are not limited thereto.
Embodiment
As shown in Figure 1, the present invention by main control unit 1, be connected with main control unit 1 sound bank 2, characteristic extracting module 3,
Speech recognition module 4 and symmetrical transistor amplifier 9, with the end-point detection for claiming formula transistor amplifier 9 to be connected
Module 5, the preprocessing module 6 being connected with endpoint detection module 5, the audio coding module 7 being connected with preprocessing module 6,
And the voice collecting unit 8 being connected with audio coding module 7 forms.
Wherein, main control unit 1 uses existing single-chip microcontroller to realize as control centre of the invention.Voice collecting
Existing microphone can be used for receiving voice signal and exporting after being converted into analog audio signal to realize in unit 8.Sound
Frequency coding module 7 is used to after the received analog audio signal of institute is converted into digital audio and video signals export, and preprocessing module 6 is then used
It is handled in digital audio and video signals, avoids distorted signals, and endpoint detection module 5 is then for voice signal and non-voice
The period of signal distinguishes.Title formula transistor amplifier 9 then can carry out distortionless amplification to signal.
Sound bank 2 is then for being stored in advance the voice signal of identified target, and characteristic extracting module 3 is then for input
Digital speech entry signal is analyzed, and order representated by entry signal is extracted.Speech recognition module 4 is then for feature
The extracted voice signal of extraction module 3 is identified determine whether voice command is consistent with the voice signal in sound bank 2.
The audio coding module 7, endpoint detection module 5, sound bank 2, characteristic extracting module 3 and speech recognition module 4 are all made of existing
There is technology can be realized.
As shown in Fig. 2, the preprocessing module 6 is by triode trigger circuit, the detection being connected with triode trigger circuit
Circuit and self-maintained circuit composition；The self-maintained circuit is also connected with the detection circuit.
Wherein, triode trigger circuit is by triode Q1, triode Q2, triode Q3, capacitor C1, capacitor C2, capacitor C3,
Diode D1, diode D2, diode D3, diode D4, resistance R1, resistance R2, resistance R3, resistance R4 and resistance R5 group
At.
When connection, capacitor C1 anode be connected after diode D2 with the base stage of triode Q3, its cathode then with self-excitation
Oscillating circuit is connected, and the pole N of diode D1 is connected with the base stage of triode Q2, its pole P then collector with triode Q1
It is connected, one end of resistance R3 is connected with the base stage of triode Q2, its other end then collection after resistance R4 with triode Q3
Electrode is connected, capacitor C2 anode be connected with the base stage of triode Q1, its cathode then after resistance R1 with detection circuit phase
Connection, one end of resistance R2 is connected with the base stage of triode Q3, its other end is then connected with the emitter of triode Q2, electricity
Hold C3 to be then in parallel with resistance R2, the pole P of the diode D4 sequentially emitter after diode D3 and resistance R5 with triode Q3
It is connected, its pole N is then connected with self-maintained circuit.
Meanwhile the emitter ground connection of triode Q1, its collector are then used as the input terminal of the triode trigger circuit.Institute
The collector for stating triode Q2 is connected with its base stage, its emitter is then connected with self-maintained circuit.The hair of triode Q3
Emitter-base bandgap grading also needs to be connected with detection circuit；The tie point of resistance R3 and resistance R4 meet+12V while being connected with detection circuit
Voltage.
The detection circuit can detect voice signal frequency, by detection chip U, capacitor C4, resistance R6,
Resistance R7 and diode D5 composition.When connection, one end of the resistance R6 is connected with the emitter of triode Q3, its is another
End is then connected with the LBI pin of detection chip U.Capacitor C4 anode be connected with the tie point of resistance R3 and resistance R4, its
Cathode is then connected with the VBAT pin of detection chip U.The pole P of diode D5 is connected with the LBO pin of detection chip U, its N
Pole is then connected after resistance R7 with self-maintained circuit.The RLIM pin of the detection chip U after resistance R1 with capacitor C2
Cathode be connected, its GND pin ground connection, FB pin be then connected with self-maintained circuit and its LX pin then with diode
The pole N of D5 is connected.In order to reach better detection effect, detection chip U preferentially uses SP6648 integrated circuit to realize.
The self-maintained circuit includes triode Q4, triode Q5, triode Q6, the XOR gate pole IC1, N and two poles
The P of the pole N of pipe D4 is connected, the pole P is then connected with the first input end of XOR gate IC1 the diode pole D6, N and diode D6
The diode D7 that pole is connected, the pole P is grounded, one end is connected with the first input end of XOR gate IC1, the other end is then sequentially through electricity
The resistance R8 that is connected with the base stage of triode Q6 after resistance R9 and resistance R14 is serially connected in the first input end and the of XOR gate IC1
Resistance R10 between two input terminals, one end is connected with the collector of triode Q4, the other end then collector with triode Q5
The resistance R11 being connected, one end is connected with the emitter of triode Q4, the other end is then connected with the output end of XOR gate IC1
The resistance pole R13, N connect is connected after resistance R7 with the pole N of diode D5, the pole P is then connected with the collector of triode Q6
Diode D8 and one end be connected with the pole N of diode D8, the electricity that the other end is then connected with the emitter of triode Q5
Hinder R12.
Its in connection, the first input end of XOR gate IC1 need respectively with the cathode of capacitor C1 and capacitor C3
Cathode is connected, its output end is then used as the output end of the self-maintained circuit.The base stage and XOR gate IC1 of the triode Q4
First input end be connected, its collector is then connected with the base stage of triode Q5；The collector of the triode Q5 then divides
It is not connected with the pole N of the FB pin of detection chip U and diode D8；The emitter of triode Q6 is grounded.
Symmetrical transistor amplifier 9 is then emphasis place of the invention, as shown in figure 3, it is by triode Q7, three poles
Pipe Q8, unidirectional thyristor D12, unidirectional thyristor D13, resistance R15, resistance R16, resistance R17, resistance R18, resistance R19, resistance
R20, capacitor C5, capacitor C6, capacitor C7, diode D9, diode D10 and diode D11 composition.
When connection, the cathode of capacitor C7 is connected with the pole P of unidirectional thyristor D12, its anode then after resistance R15 with list
It is connected to the pole N of thyristor D12, the pole N of diode D10 is connected with the anode of capacitor C7, its pole P is then with triode Q7's
Base stage is connected, and the cathode of capacitor C5 is connected with the base stage of triode Q7, its anode then amplifies as the symmetrical expression triode
The input terminal of circuit, one end of resistance R17 is connected with the collector of triode Q7, its other end is then connected with+12V voltage
It connects, one end of resistance R18 is connected with the emitter of triode Q7, its other end then hair after resistance R19 with triode Q8
Emitter-base bandgap grading is connected, and the pole N of diode D9 is connected with the anode of capacitor C5, its pole P is then connected with the anode of capacitor C6, resistance
One end of R16 is connected with the pole P of diode D9, its other end is then connected with the pole N of unidirectional thyristor D13, diode D11
The pole N be connected with the base stage of triode Q8, its pole P is then connected with the anode of capacitor C8, one end of resistance R20 and triode
The collector of Q8 is connected, its other end then connects -12V voltage, and the cathode of the capacitor C6 is connected with the base stage of triode Q8,
The cathode of the capacitor C8 is connected with the pole P of unidirectional thyristor D13.
Meanwhile the connection of the pole N of unidirectional thyristor D12 and the N of unidirectional thyristor D13 extremely with resistance R18 and resistance R19
Point is connected, as the symmetrical expression while control electrode of unidirectional thyristor D12 is connected with the control electrode of unidirectional thyristor D13
The output end of transistor amplifier.
Wherein, unidirectional thyristor D12, triode Q7, capacitor C5, capacitor C7, diode D10, resistance R15 and resistance
R18 forms the first amplifier, and unidirectional thyristor D13, resistance R16, resistance R19, triode Q8, capacitor C6, capacitor C8 and
Diode D11 then forms the second amplifier.First amplifier and the second amplifier are symmetrical, can mutually make at work
About, it is amplified after signal input is come in by two symmetrical amplifiers, to be distorted after avoiding signal from amplifying
Phenomenon.
As described above, the present invention can be realized well.
Claims (6)
1. a kind of high definition speech recognition system based on symmetrical transistor amplifier, by voice acquisition module (8), master control
Unit (1), the sound bank (2) being connected with main control unit (1), characteristic extracting module (3), speech recognition module (4), with voice
The audio coding module (7) that acquisition module (8) is connected, the preprocessing module (6) being connected with audio coding module (7), with
And endpoint detection module (5) composition being connected with preprocessing module (6)；It is characterized in that：Endpoint detection module (5) and main
Symmetrical transistor amplifier (9) are also serially connected between control unit (1)；The symmetrical transistor amplifier (9) by
Triode Q7, triode Q8, unidirectional thyristor D12, unidirectional thyristor D13, capacitor C6, capacitor C8, cathode and unidirectional thyristor
The capacitor pole C7, N and capacitor that the pole P of D12 is connected, anode is then connected after resistance R15 with the pole N of unidirectional thyristor D12
The diode D10 that the anode of C7 is connected, the pole P is then connected with the base stage of triode Q7, the base stage phase of cathode and triode Q7
Connection, the positive then capacitor C5 as the input terminal of the symmetrical expression transistor amplifier (9), the current collection of one end and triode Q7
The resistance R17 that pole is connected, the other end is then connected with+12V voltage, one end are connected with the emitter of triode Q7, are another
The resistance pole R18, N being then connected after resistance R19 with the emitter of triode Q8 is held to be connected with the anode of capacitor C5, the pole P
The diode D9 being then connected with the anode of capacitor C6, one end is connected with the pole P of diode D9, the other end then with unidirectional brilliant lock
The resistance pole R16, N that the pole N of pipe D13 is connected is connected with the base stage of triode Q8, the pole P is then connected with the anode of capacitor C8
Diode D11 and one end be connected with the collector of triode Q8, the other end then connect -12V voltage resistance R20 composition；
The cathode of the capacitor C6 is connected with the base stage of triode Q8, the pole the P phase of the cathode and unidirectional thyristor D13 of the capacitor C8
Connection；The tie point phase of the pole N of the unidirectional thyristor D12 and the N of unidirectional thyristor D13 extremely with resistance R18 and resistance R19
Connection, as three pole of symmetrical expression while the control electrode of unidirectional thyristor D12 is connected with the control electrode of unidirectional thyristor D13
The output end of pipe amplifying circuit (9).
2. a kind of high definition speech recognition system based on symmetrical transistor amplifier according to claim 1, special
Sign is：The preprocessing module (6) is then by triode trigger circuit, the detection circuit being connected with triode trigger circuit
It is formed with self-maintained circuit；The self-maintained circuit is also connected with the detection circuit.
3. a kind of high definition speech recognition system based on symmetrical transistor amplifier according to claim 2, special
Sign is：The triode trigger circuit is by triode Q1, triode Q2, triode Q3, and anode is after diode D2 with three
The capacitor pole C1, N that the base stage of pole pipe Q3 is connected, cathode is then connected with self-maintained circuit is connected with the base stage of triode Q2
It connects, the diode D1 that the pole P is then connected with the collector of triode Q1, one end is connected with the base stage of triode Q2, the other end
The resistance R3 being then connected after resistance R4 with the collector of triode Q3, anode be connected with the base stage of triode Q1, cathode
The capacitor C2 being then connected after resistance R1 with detection circuit, one end is connected with the base stage of triode Q3, the other end is then with three
The resistance R2 that the emitter of pole pipe Q2 is connected, the pole capacitor C3, P being in parallel with resistance R2 is sequentially through diode D3 and resistance R5
It is connected afterwards with the emitter of triode Q3, the diode D4 composition that the pole N is then connected with self-maintained circuit；The triode
The emitter ground connection of Q1, its collector are then used as the input terminal of the triode trigger circuit；The collector of the triode Q2 with
Its base stage is connected, its emitter is then connected with self-maintained circuit；The emitter of triode Q3 is also connected with detection circuit
It connects；The tie point of resistance R3 and resistance R4 connect+12V voltage while being connected with detection circuit.
4. a kind of high definition speech recognition system based on symmetrical transistor amplifier according to claim 3, special
Sign is：The detection circuit is made of detection chip U, capacitor C4, resistance R6, resistance R7 and diode D5；The electricity
One end of resistance R6 is connected with the emitter of triode Q3, its other end is then connected with the LBI pin of detection chip U；Capacitor
The anode of C4 is connected with the tie point of resistance R3 and resistance R4, its cathode is then connected with the VBAT pin of detection chip U；Two
The pole P of pole pipe D5 is connected with the LBO pin of detection chip U, its pole N is then connected after resistance R7 with self-maintained circuit；
The RLIM pin of the detection chip U is connected after resistance R1 with the cathode of capacitor C2, its GND pin ground connection, FB pin then
It is connected with self-maintained circuit and its LX pin is then connected with the pole N of diode D5.
5. a kind of high definition speech recognition system based on symmetrical transistor amplifier according to claim 4, special
Sign is：The self-maintained circuit is by triode Q4, triode Q5, triode Q6, the XOR gate pole IC1, N and diode D4
The pole N be connected, the diode pole D6, N that the pole P is then connected with the first input end of XOR gate IC1 and the pole the P phase of diode D6
The diode D7 that connection, the pole P are grounded, one end is connected with the first input end of XOR gate IC1, the other end is then sequentially through resistance R9
With the resistance R8 being connected after resistance R14 with the base stage of triode Q6, it is serially connected in the first input end of XOR gate IC1 and second defeated
Enter the resistance R10 between end, one end is connected with the collector of triode Q4, the other end is then connected with the collector of triode Q5
The resistance R11 connect, one end is connected with the emitter of triode Q4, the other end is then connected with the output end of XOR gate IC1
The resistance pole R13, N is connected after resistance R7 with the pole N of diode D5, two that the pole P is then connected with the collector of triode Q6
Pole pipe D8 and one end be connected with the pole N of diode D8, the resistance that the other end is then connected with the emitter of triode Q5
R12 composition；The first input end of the XOR gate IC1 is connected with the cathode of the cathode of capacitor C1 and capacitor C3 respectively, it
Output end is then used as the output end of the self-maintained circuit；The base stage of the triode Q4 and the first input end of XOR gate IC1
It is connected, its collector is then connected with the base stage of triode Q5；The collector of the triode Q5 then respectively with detection chip U
FB pin and the pole N of diode D8 be connected；The emitter of triode Q6 is grounded.
6. a kind of high definition speech recognition system based on symmetrical transistor amplifier according to claim 5, special
Sign is：The detection chip U is SP6648 integrated circuit.
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