CN104931136A - Wide pulse triggering-based phase-shift type high-sensitivity infrared detection system - Google Patents
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Abstract
The invention discloses a wide pulse triggering-based phase-shift type high-sensitivity infrared detection system. The wide pulse triggering-based phase-shift type high-sensitivity infrared detection system is composed of a sensor U, a power source circuit and a two-stage low-pass filtering and amplifying circuit which are connected with the sensor U, a comparison circuit connected with the two-stage low-pass filtering and amplifying circuit, a conversion circuit connected with the comparison circuit and the power source circuit simultaneously, and a phase-shift processing circuit connected with the comparison circuit and the conversion circuit simultaneously. The wide pulse triggering-based phase-shift type high-sensitivity infrared detection system is characterized in that a wide pulse triggering circuit is connected in series between the two-stage low-pass filtering and amplifying circuit and the phase-shift processing circuit. According to the wide pulse triggering-based phase-shift type high-sensitivity infrared detection system of the invention, the wide pulse triggering circuit is adopted, so that wide triggering pulses can be provided, and therefore, the system of the invention has high applicability.
Description
Technical field
The present invention relates to electronic applications, specifically refer to a kind of phase shift high sensitivity IR detection system triggered based on broad pulse.
Background technology
There is the advantage of its uniqueness due to infrared detection technique thus make it obtain investigation and application widely in military and national defense and civil area, especially under the traction of military requirement and the promotion of correlation technique development, infrared detection technique as new and high technology will be more extensive in the application in future, and status is more important.
Infrared eye sightless infrared energy is transformed into the energy transfer machine that other is easy to the form of energy measured, current infra-red detection is with through being widely used in the middle of people live, the infra-red thermometer commonly used as people uses infra-red detection technology exactly, and it brings and very large makes profit.But current used IR detection system its cannot be common to multiple industry, there is significant limitation.
Summary of the invention
The object of the invention is to overcome current IR detection system and cannot be common to multiple industry, there is very large circumscribed defect, a kind of phase shift high sensitivity IR detection system triggered based on broad pulse is provided.
The following technical scheme of object of the present invention realizes: a kind of phase shift high sensitivity IR detection system triggered based on broad pulse, it is by sensor U, be connected with sensor U the power circuit connect and two-stage low-pass filtering amplifying circuit, the comparator circuit be connected with two-stage low-pass filtering amplifying circuit, the change-over circuit be simultaneously connected with power circuit with comparator circuit, the phase shift treatment circuit be simultaneously connected with change-over circuit with comparator circuit, and be serially connected in the broad pulse trigger circuit composition between two-stage low-pass filtering amplifying circuit and phase shift treatment circuit.
Further, described broad pulse trigger circuit are by triode Q5, triode Q6, unidirectional thyristor D9, field effect transistor MOS1, N pole is connected with the emitter of triode Q5 after diode D8 through diode D7 in turn, P pole is then in turn through voltage stabilizing diode D5 that diode D6 is connected with the collector of triode Q5 after resistance R21, one end is connected with the N pole of voltage stabilizing diode D5, the potentiometer R15 that the other end is then connected with the P pole of voltage stabilizing diode D5 after resistance R16, negative pole is connected with the P pole of voltage stabilizing diode D5 and two-stage low-pass filtering amplifying circuit respectively, the polar capacitor C12 that positive pole is then connected with the grid of field effect transistor MOS1, one end is connected with the base stage of triode Q5, the resistance R18 of the other end then ground connection, one end is connected with the source electrode of field effect transistor MOS1, the resistance R19 that the other end is then connected with the N pole of unidirectional thyristor D9, and one end is connected with the P pole of unidirectional thyristor D9, the resistance R20 that the other end is then connected with phase shift treatment circuit forms, the grid of described field effect transistor MOS1 is respectively with the positive pole of polar capacitor C12 and the collector of triode Q5 is connected, its its source electrode that is then connected with the base stage of triode Q5 of draining then is connected with the control pole of unidirectional thyristor D9, the base stage of described triode Q6 is connected with the P pole of voltage stabilizing diode D5, its collector is then connected with the grid of field effect transistor MOS1, its grounded emitter, the sliding end of described potentiometer R15 is then connected with the N pole of voltage stabilizing diode D5.
Described phase shift treatment circuit is by phase shift chip U1, triode Q3, triode Q4, one end is connected with the VCC+ pin of phase shift chip U1, the resistance R13 that the other end is connected with the IN1 pin of phase shift chip U1, negative pole is connected with the IN1 pin of phase shift chip U1 after resistance R14, the polar capacitor C11 that positive pole is connected with the IN2 pin of phase shift chip U1, positive pole is connected with the NC pin of phase shift chip U1 after resistance R12, the polar capacitor C9 that negative pole is connected with the collector of triode Q3, positive pole is connected with the OUT pin of phase shift chip U1, the polar capacitor C10 of minus earth, one end is connected with the OUT pin of phase shift chip U1, the potentiometer R11 that the other end is connected with the collector of triode Q4, P pole is connected with the OFF1 pin of phase shift chip U1, the diode D3 that N pole is connected with the base stage of triode Q3, and P pole is connected with the OFF2 pin of phase shift chip U1, the diode D4 that N pole is connected with the emitter of triode Q4 forms, the VCC+ pin of described phase shift chip U1 is connected with comparator circuit, VCC-pin ground connection, OUT pin are connected with the sliding end of potentiometer R11, the emitter of triode Q3 is connected with the base stage of triode Q4, and the collector of triode Q4 is connected with change-over circuit, the negative pole of described polar capacitor C11 is also connected with the P pole of unidirectional thyristor D9 after resistance R20.
Described power circuit is by triode Q1, and polar capacitor C6, polar capacitor C7, resistance R5, resistance R6 form; The emitter of triode Q1 is connected with sensor U, its base stage ground connection, its collector after polar capacitor C6 are connected with power supply after resistance R6, and the positive pole of polar capacitor C7 is connected with the collector of triode Q1 after resistance R5, minus earth.
Described two-stage low-pass filtering amplifying circuit is by amplifier P1, amplifier P2, the polar capacitor C1 that negative pole and positive pole are all connected with sensor U, one end is connected with the positive pole of polar capacitor C1, the resistance R1 that the other end is then connected with the normal phase input end of amplifier P1, negative pole is connected with the negative pole of polar capacitor C1, the polar capacitor C2 that positive pole is connected with the inverting input of amplifier P1 after resistance R2, be serially connected in the polar capacitor C3 between amplifier P1 inverting input and output terminal, negative pole is connected with the output terminal of amplifier P1, the polar capacitor C4 that positive pole is connected with the inverting input of amplifier P2 after resistance R3, the resistance R4 be in parallel with resistance R3, and positive pole is connected with the inverting input of amplifier P2, the polar capacitor C5 that negative pole is connected with the output terminal of amplifier P2 forms, the normal phase input end of described amplifier P2 is all connected with comparator circuit with output terminal, the minus earth of electric capacity C1, the negative pole of described polar capacitor C2 is also connected with the negative pole of polar capacitor C12.
Described comparator circuit is by amplifier P3, amplifier P4, triode Q2, the resistance R7 that one end is connected with the normal phase input end of amplifier P2, the other end is then connected with the normal phase input end of amplifier P3, the diode D1 that P pole is connected with the emitter of triode Q2, N pole is connected with the normal phase input end of amplifier P4, be serially connected in the polar capacitor C8 between the inverting input of amplifier P4 and output terminal, one end is connected with the output terminal of amplifier P4, resistance R9 that the other end is connected with the output terminal of amplifier P3 after resistance R8 forms; The base stage of described triode Q2 is connected with the output terminal of amplifier P2, collector is connected with the inverting input of amplifier P3, resistance R8 is connected with change-over circuit with the tie point of resistance R9, and the output terminal of amplifier P4 is connected with the VCC+ pin of phase shift chip U1.
Described change-over circuit comprises amplifier P5, amplifier P6, diode D2, resistance R10; The P pole of diode D2 is connected with the output terminal of amplifier P5, N pole is connected with the normal phase input end of amplifier P6, the normal phase input end of amplifier P5 is connected with the collector of triode Q1 after resistance R6, inverting input is connected with the tie point of resistance R9 with resistance R8, and inverting input ground connection, its output terminal after resistance R10 of amplifier P6 are connected with the collector of triode Q4.
Be one reach better result of use, described sensor U is preferably the pyroelectric infrared sensor of dual-element type, and described phase shift chip U1 is then preferably LM741 integrated chip and realizes.
The present invention compared with prior art, has the following advantages and beneficial effect:
(1) the present invention adopts phase shift treatment circuit, and it can improve reaction velocity and the accuracy of detection system.
(2) the present invention adopts the pyroelectric infrared sensor of dual-element type, make the receiving sensitivity of detection system higher, reaction faster.
(3) the present invention is provided with two-stage low-pass filtering amplifying circuit, the distortionless amplification of Weak frequency signal that it can receive sensor, thus makes the testing result of detection system more accurate.
(4) the present invention adopts broad pulse trigger circuit, and it can provide wider trigger pulse, thus applicability of the present invention can be made stronger.
Accompanying drawing explanation
Fig. 1 is one-piece construction schematic diagram of the present invention.
Embodiment
Below in conjunction with specific embodiment, the present invention is described in further detail, but embodiments of the present invention are not limited thereto.
Embodiment
As shown in Figure 1, the present invention is by sensor U, be connected with sensor U the power circuit connect and two-stage low-pass filtering amplifying circuit, the comparator circuit be connected with two-stage low-pass filtering amplifying circuit, the change-over circuit be simultaneously connected with power circuit with comparator circuit, the phase shift treatment circuit be simultaneously connected with change-over circuit with comparator circuit, and be serially connected in the broad pulse trigger circuit composition between two-stage low-pass filtering amplifying circuit and phase shift treatment circuit.In order to make the sensitivity of detection system Signal reception to external world higher, sensor U of the present invention adopts the pyroelectric infrared sensor of dual-element type.
Wherein, phase shift treatment circuit is by phase shift chip U1, triode Q3, triode Q4, one end is connected with the VCC+ pin of phase shift chip U1, the resistance R13 that the other end is connected with the IN1 pin of phase shift chip U1, negative pole is connected with the IN1 pin of phase shift chip U1 after resistance R14, the polar capacitor C11 that positive pole is connected with the IN2 pin of phase shift chip U1, positive pole is connected with the NC pin of phase shift chip U1 after resistance R12, the polar capacitor C9 that negative pole is connected with the collector of triode Q3, positive pole is connected with the OUT pin of phase shift chip U1, the polar capacitor C10 of minus earth, one end is connected with the OUT pin of phase shift chip U1, the potentiometer R11 that the other end is connected with the collector of triode Q4, P pole is connected with the OFF1 pin of phase shift chip U1, the diode D3 that N pole is connected with the base stage of triode Q3, and P pole is connected with the OFF2 pin of phase shift chip U1, the diode D4 that N pole is connected with the emitter of triode Q4 forms.
The VCC+ pin of this phase shift chip U1 is connected with comparator circuit, VCC-pin ground connection, OUT pin are connected with the sliding end of potentiometer R11.The emitter of triode Q3 is connected with the base stage of triode Q4, and the collector of triode Q4 is connected with change-over circuit.Meanwhile, the negative pole of this polar capacitor C11 is also connected with broad pulse trigger circuit.Phase shift treatment circuit, it can improve reaction velocity and the accuracy of detection system.In order to ensure implementation result, described phase shift chip U1 is preferably LM741 integrated chip to realize.
In addition, power circuit processes the voltage being supplied to detection system, makes it meet the needs of system.It is by triode Q1, polar capacitor C6, polar capacitor C7, resistance R5, and resistance R6 forms.During connection, the emitter of this triode Q1 is connected with sensor U, its base stage ground connection, its collector after polar capacitor C6 are connected with power supply after resistance R6.The positive pole of polar capacitor C7 is connected with the collector of triode Q1 after resistance R5, minus earth.
Described two-stage low-pass filtering amplifying circuit then comprises amplifier P1, amplifier P2, the polar capacitor C1 that negative pole and positive pole are all connected with sensor U, this polar capacitor C1 is connected with sensor U, can the signal that exports of receiving sensor U, so that this two-stage low-pass filtering amplifying circuit processes signal.
Simultaneously, this two-stage low-pass filtering amplifying circuit is also provided with one end and is connected with the positive pole of polar capacitor C1, the resistance R1 that the other end is then connected with the normal phase input end of amplifier P1, negative pole is connected with the negative pole of polar capacitor C1, the polar capacitor C2 that positive pole is connected with the inverting input of amplifier P1 after resistance R2, be serially connected in the polar capacitor C3 between amplifier P1 inverting input and output terminal, negative pole is connected with the output terminal of amplifier P1, the polar capacitor C4 that positive pole is connected with the inverting input of amplifier P2 after resistance R3, the resistance R4 be in parallel with resistance R3, and positive pole is connected with the inverting input of amplifier P2, the polar capacitor C5 that negative pole is connected with the output terminal of amplifier P2 forms.The normal phase input end of described amplifier P2 is all connected with comparator circuit with output terminal, the minus earth of electric capacity C1.The negative pole of this polar capacitor C2 is also connected with these broad pulse trigger circuit.By the effect of two-stage low-pass filtering amplifying circuit, the distortionless amplification of Weak frequency signal that sensor can be received, thus make the testing result of detection system more accurate.
Described comparator circuit is by amplifier P3, amplifier P4, triode Q2, the resistance R7 that one end is connected with the normal phase input end of amplifier P2, the other end is then connected with the normal phase input end of amplifier P3, the diode D1 that P pole is connected with the emitter of triode Q2, N pole is connected with the normal phase input end of amplifier P4, be serially connected in the polar capacitor C8 between the inverting input of amplifier P4 and output terminal, one end is connected with the output terminal of amplifier P4, resistance R9 that the other end is connected with the output terminal of amplifier P3 after resistance R8 forms.
During connection, the base stage of described triode Q2 is connected with the output terminal of amplifier P2, collector is connected with the inverting input of amplifier P3, resistance R8 is connected with change-over circuit with the tie point of resistance R9, and the output terminal of amplifier P4 is connected with the VCC+ pin of phase shift chip U1.
Described change-over circuit comprises amplifier P5, amplifier P6, diode D2, resistance R10.Connect into, the P pole of this diode D2 is connected with the output terminal of amplifier P5, N pole is connected with the normal phase input end of amplifier P6, the normal phase input end of amplifier P5 is connected with the collector of triode Q1 after resistance R6, inverting input is connected with the tie point of resistance R9 with resistance R8, and inverting input ground connection, its output terminal after resistance R10 of amplifier P6 are connected with the collector of triode Q4.
Broad pulse trigger circuit comprise triode Q5, triode Q6, unidirectional thyristor D9, field effect transistor MOS1, N pole is connected with the emitter of triode Q5 after diode D8 through diode D7 in turn, P pole then in turn through the voltage stabilizing diode D5 that diode D6 is connected with the collector of triode Q5 after resistance R21, the potentiometer R15 that one end is connected with the N pole of voltage stabilizing diode D5, the other end is then connected with the P pole of voltage stabilizing diode D5 after resistance R16.
In order to enough wide trigger pulse can be provided, these broad pulse trigger circuit also include negative pole and are connected with the P pole of voltage stabilizing diode D5 and the negative pole of polar capacitor C2 respectively, the polar capacitor C12 that positive pole is then connected with the grid of field effect transistor MOS1, one end is connected with the base stage of triode Q5, the resistance R18 of the other end then ground connection, one end is connected with the source electrode of field effect transistor MOS1, the resistance R19 that the other end is then connected with the N pole of unidirectional thyristor D9, and one end is connected with the P pole of unidirectional thyristor D9, the resistance R20 that the other end is then connected with the negative pole of polar capacitor C11.
The grid of this field effect transistor MOS1 needs respectively with the positive pole of polar capacitor C12 and the collector of triode Q5 is connected, its its source electrode that is then connected with the base stage of triode Q5 of draining then is connected with the control pole of unidirectional thyristor D9 simultaneously.The base stage of described triode Q6 is connected with the P pole of voltage stabilizing diode D5, its collector is then connected with the grid of field effect transistor MOS1, its grounded emitter.The sliding end of described potentiometer R15 is then connected with the N pole of voltage stabilizing diode D5.
After voltage signal is come in, voltage stabilizing diode D5 carries out voltage stabilizing process to voltage, then is charged to polar capacitor C12 by potentiometer R15 and resistance R16.When the charging voltage on polar capacitor C12 not yet reaches the peak point voltage of field effect transistor MOS1, the base potential of this triode Q5 is higher, and at this moment triode Q5 ends.When the charging voltage on polar capacitor C12 reaches the peak point voltage of field effect transistor MOS1, at this moment field effect transistor MOS1 then conducting, the current potential simultaneously in triode Q5 base stage sharply declines, at this moment triode Q5 then conducting.Simultaneously, voltage is charged to polar capacitor C12 by diode D7 and diode D8 and triode Q5, the current potential on polar capacitor C12 is made to maintain on the peak point voltage of field effect transistor MOS1, until just turn off during voltage zero-cross, so then broaden trigger pulse, thus make load capacity of the present invention stronger.
As mentioned above, just well the present invention can be realized.
Claims (8)
1. the phase shift high sensitivity IR detection system triggered based on broad pulse, it is by sensor U, be connected with sensor U the power circuit connect and two-stage low-pass filtering amplifying circuit, the comparator circuit be connected with two-stage low-pass filtering amplifying circuit, the change-over circuit be simultaneously connected with power circuit with comparator circuit, and form with the phase shift treatment circuit that comparator circuit is connected with change-over circuit simultaneously, it is characterized in that, between two-stage low-pass filtering amplifying circuit and phase shift treatment circuit, be also serially connected with broad pulse trigger circuit, described broad pulse trigger circuit are by triode Q5, triode Q6, unidirectional thyristor D9, field effect transistor MOS1, N pole is connected with the emitter of triode Q5 after diode D8 through diode D7 in turn, P pole is then in turn through voltage stabilizing diode D5 that diode D6 is connected with the collector of triode Q5 after resistance R21, one end is connected with the N pole of voltage stabilizing diode D5, the potentiometer R15 that the other end is then connected with the P pole of voltage stabilizing diode D5 after resistance R16, negative pole is connected with the P pole of voltage stabilizing diode D5 and two-stage low-pass filtering amplifying circuit respectively, the polar capacitor C12 that positive pole is then connected with the grid of field effect transistor MOS1, one end is connected with the base stage of triode Q5, the resistance R18 of the other end then ground connection, one end is connected with the source electrode of field effect transistor MOS1, the resistance R19 that the other end is then connected with the N pole of unidirectional thyristor D9, and one end is connected with the P pole of unidirectional thyristor D9, the resistance R20 that the other end is then connected with phase shift treatment circuit forms, the grid of described field effect transistor MOS1 is respectively with the positive pole of polar capacitor C12 and the collector of triode Q5 is connected, its its source electrode that is then connected with the base stage of triode Q5 of draining then is connected with the control pole of unidirectional thyristor D9, the base stage of described triode Q6 is connected with the P pole of voltage stabilizing diode D5, its collector is then connected with the grid of field effect transistor MOS1, its grounded emitter, the sliding end of described potentiometer R15 is then connected with the N pole of voltage stabilizing diode D5.
2. a kind of phase shift high sensitivity IR detection system triggered based on broad pulse according to claim 1, it is characterized in that: described phase shift treatment circuit is by phase shift chip U1, triode Q3, triode Q4, one end is connected with the VCC+ pin of phase shift chip U1, the resistance R13 that the other end is connected with the IN1 pin of phase shift chip U1, negative pole is connected with the IN1 pin of phase shift chip U1 after resistance R14, the polar capacitor C11 that positive pole is connected with the IN2 pin of phase shift chip U1, positive pole is connected with the NC pin of phase shift chip U1 after resistance R12, the polar capacitor C9 that negative pole is connected with the collector of triode Q3, positive pole is connected with the OUT pin of phase shift chip U1, the polar capacitor C10 of minus earth, one end is connected with the OUT pin of phase shift chip U1, the potentiometer R11 that the other end is connected with the collector of triode Q4, P pole is connected with the OFF1 pin of phase shift chip U1, the diode D3 that N pole is connected with the base stage of triode Q3, and P pole is connected with the OFF2 pin of phase shift chip U1, the diode D4 that N pole is connected with the emitter of triode Q4 forms, the VCC+ pin of described phase shift chip U1 is connected with comparator circuit, VCC-pin ground connection, OUT pin are connected with the sliding end of potentiometer R11, the emitter of triode Q3 is connected with the base stage of triode Q4, and the collector of triode Q4 is connected with change-over circuit, the negative pole of described polar capacitor C11 is also connected with the P pole of unidirectional thyristor D9 after resistance R20.
3. a kind of phase shift high sensitivity IR detection system triggered based on broad pulse according to claim 2, is characterized in that: described power circuit is by triode Q1, and polar capacitor C6, polar capacitor C7, resistance R5, resistance R6 form; The emitter of triode Q1 is connected with sensor U, its base stage ground connection, its collector after polar capacitor C6 are connected with power supply after resistance R6, and the positive pole of polar capacitor C7 is connected with the collector of triode Q1 after resistance R5, minus earth.
4. a kind of phase shift high sensitivity IR detection system triggered based on broad pulse according to claim 3, it is characterized in that: described two-stage low-pass filtering amplifying circuit is by amplifier P1, amplifier P2, the polar capacitor C1 that negative pole and positive pole are all connected with sensor U, one end is connected with the positive pole of polar capacitor C1, the resistance R1 that the other end is then connected with the normal phase input end of amplifier P1, negative pole is connected with the negative pole of polar capacitor C1, the polar capacitor C2 that positive pole is connected with the inverting input of amplifier P1 after resistance R2, be serially connected in the polar capacitor C3 between amplifier P1 inverting input and output terminal, negative pole is connected with the output terminal of amplifier P1, the polar capacitor C4 that positive pole is connected with the inverting input of amplifier P2 after resistance R3, the resistance R4 be in parallel with resistance R3, and positive pole is connected with the inverting input of amplifier P2, the polar capacitor C5 that negative pole is connected with the output terminal of amplifier P2 forms, the normal phase input end of described amplifier P2 is all connected with comparator circuit with output terminal, the minus earth of electric capacity C1, the negative pole of described polar capacitor C2 is also connected with the negative pole of polar capacitor C12.
5. a kind of phase shift high sensitivity IR detection system triggered based on broad pulse according to claim 4, it is characterized in that: described comparator circuit is by amplifier P3, amplifier P4, triode Q2, one end is connected with the normal phase input end of amplifier P2, the resistance R7 that the other end is then connected with the normal phase input end of amplifier P3, P pole is connected with the emitter of triode Q2, the diode D1 that N pole is connected with the normal phase input end of amplifier P4, be serially connected in the polar capacitor C8 between the inverting input of amplifier P4 and output terminal, one end is connected with the output terminal of amplifier P4, the resistance R9 that the other end is connected with the output terminal of amplifier P3 after resistance R8 forms, the base stage of described triode Q2 is connected with the output terminal of amplifier P2, collector is connected with the inverting input of amplifier P3, resistance R8 is connected with change-over circuit with the tie point of resistance R9, and the output terminal of amplifier P4 is connected with the VCC+ pin of phase shift chip U1.
6. a kind of phase shift high sensitivity IR detection system triggered based on broad pulse according to claim 5, is characterized in that: described change-over circuit comprises amplifier P5, amplifier P6, diode D2, resistance R10; The P pole of diode D2 is connected with the output terminal of amplifier P5, N pole is connected with the normal phase input end of amplifier P6, the normal phase input end of amplifier P5 is connected with the collector of triode Q1 after resistance R6, inverting input is connected with the tie point of resistance R9 with resistance R8, and inverting input ground connection, its output terminal after resistance R10 of amplifier P6 are connected with the collector of triode Q4.
7. a kind of phase shift high sensitivity IR detection system triggered based on broad pulse according to claim 6, is characterized in that: described sensor U is the pyroelectric infrared sensor of dual-element type.
8. a kind of phase shift high sensitivity IR detection system triggered based on broad pulse according to any one of claim 2 ~ 6, is characterized in that: described phase shift chip U1 is LM741 integrated chip.
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| CN201510321263.7A CN104931136A (en) | 2014-11-26 | 2015-06-07 | Wide pulse triggering-based phase-shift type high-sensitivity infrared detection system |
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| CN104507206A (en) * | 2014-11-22 | 2015-04-08 | 成都智利达科技有限公司 | LED driving system based on logic gate control |
| CN104406701A (en) * | 2014-11-26 | 2015-03-11 | 成都创图科技有限公司 | High-sensitivity infrared detection system based on phase shifting |
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| CN104406701A (en) | 2015-03-11 |
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