CN204902856U - Photoelectric sensor with amplifier circuit - Google Patents

Abstract

The utility model belongs to the technical field of the sensor, specific theory relates to a photoelectric sensor with amplifier circuit. The utility model provides a pair of photoelectric sensor with amplifier circuit, including photosensitive diode, detection circuitry and filtering output circuit, its characterized in that still includes amplifier circuit, photosensitive diode and amplifier circuit are connected, and amplifier circuit's output is connected with detection circuitry's input, and detection circuitry's output and filtering output circuit's input are connected. The beneficial effects of the utility model are that, can the effective amplification light -sensitive device's output voltage, have simple structure simultaneously, low cost's advantage. The utility model discloses be particularly useful for photoelectric sensor.

Description

A kind of photoelectric sensor with amplifying circuit

Technical field

The utility model belongs to sensor technical field, relates to a kind of photoelectric sensor with amplifying circuit specifically.

Background technology

Photoelectric sensor is one of the most frequently used at present sensor, and light signal is converted to the ability of electric signal by it, makes it have in many occasions and generally applies.Current photoelectric sensor, is mainly by elements such as photosensitive diode, resistance, produces Weak current or voltage, detected the signal of needs by testing circuit, exported by signal finally by filtering output circuit under the effect of light signal.But the curtage that normal light sensing device produces under the effect of light signal is very little, subsequent conditioning circuit directly processes certain difficulty to the number of converting to, and directly adopts volume and the cost of the devices such as amplifier or increase circuit.

Utility model content

To be solved in the utility model, be exactly for the problems referred to above, propose a kind of photoelectric sensor with amplifying circuit.

For achieving the above object, the utility model adopts following technical scheme:

There is a photoelectric sensor for amplifying circuit, comprise photodiode, testing circuit and filtering output circuit; It is characterized in that, also comprise amplifying circuit, described photodiode is connected with amplifying circuit, and the output terminal of amplifying circuit is connected with the input end of testing circuit, and the output terminal of testing circuit is connected with the input end of filtering output circuit;

Described amplifying circuit comprises resistance first resistance R1, the second resistance R2, the 3rd resistance R3, the 4th resistance R4, the 5th resistance R5, the 6th resistance R6, the 7th resistance R7, the 8th resistance R8, the first NMOS tube M1, the second NMOS tube M2, NMOS tube the 3rd NMOS tube M3, the 4th NMOS tube M4, the 5th NMOS tube M5, the 6th NMOS tube M6 and the 7th NMOS tube M7; The negative pole of photodiode connects the source electrode of the first NMOS tube M1 and the grid of the second NMOS tube M2, its plus earth; The drain electrode of the first NMOS tube M1 meets power vd D by the first resistance R1, and its grid connects the drain electrode of the second NMOS tube M2, and its source electrode is by the second resistance R2 ground connection; The drain electrode of the second NMOS tube M2 meets power vd D by the 3rd resistance R3, and its grid connects the source electrode of the first NMOS tube M1, its source ground;

The drain electrode of the 3rd NMOS tube M3 meets power vd D by the 4th resistance R4, and its grid connects the drain electrode of the 4th NMOS tube M4, and its source electrode is by the 5th resistance R5 ground connection; The drain electrode of the 4th NMOS tube M4 meets power vd D by the 6th resistance R6, its source ground;

The drain electrode of the 5th NMOS tube M5 meets power vd D by the 7th resistance R7, and its grid connects the drain electrode of the 3rd NMOS tube M3; The drain electrode of the 6th NMOS tube M6 meets power vd D by the 8th resistance R8, and its grid connects the drain electrode of the first NMOS tube M1; The source electrode of the 5th NMOS tube M5 and the 6th NMOS tube M6 connects the drain electrode of the 7th NMOS tube M7 jointly; The grid of the 7th NMOS tube M7 connects the source electrode of the 3rd NMOS tube M3 and the grid of the 4th NMOS tube M4, its source ground; The tie point of the 8th resistance R8 and the 6th NMOS tube M6 is the output terminal of amplifying circuit.

The beneficial effects of the utility model are, effectively can amplify the output voltage of photosensitive device, have structure simple, advantage with low cost simultaneously.

Accompanying drawing explanation

Fig. 1 is logical organization schematic diagram of the present utility model;

Fig. 2 is the circuit structure diagram of amplifying circuit in the utility model.

Embodiment

Fig. 1 is a kind of photoelectric sensor with amplifying circuit of the present utility model, comprises photodiode, testing circuit and filtering output circuit; It is characterized in that, also comprise amplifying circuit, described photodiode is connected with amplifying circuit, and the output terminal of amplifying circuit is connected with the input end of testing circuit, and the output terminal of testing circuit is connected with the input end of filtering output circuit;

As shown in Figure 2, described amplifying circuit comprises resistance first resistance R1, the second resistance R2, the 3rd resistance R3, the 4th resistance R4, the 5th resistance R5, the 6th resistance R6, the 7th resistance R7, the 8th resistance R8, the first NMOS tube M1, the second NMOS tube M2, NMOS tube the 3rd NMOS tube M3, the 4th NMOS tube M4, the 5th NMOS tube M5, the 6th NMOS tube M6 and the 7th NMOS tube M7; The negative pole of photodiode connects the source electrode of the first NMOS tube M1 and the grid of the second NMOS tube M2, its plus earth; The drain electrode of the first NMOS tube M1 meets power vd D by the first resistance R1, and its grid connects the drain electrode of the second NMOS tube M2, and its source electrode is by the second resistance R2 ground connection; The drain electrode of the second NMOS tube M2 meets power vd D by the 3rd resistance R3, and its grid connects the source electrode of the first NMOS tube M1, its source ground;

The drain electrode of the 3rd NMOS tube M3 meets power vd D by the 4th resistance R4, and its grid connects the drain electrode of the 4th NMOS tube M4, and its source electrode is by the 5th resistance R5 ground connection; The drain electrode of the 4th NMOS tube M4 meets power vd D by the 6th resistance R6, its source ground;

The drain electrode of the 5th NMOS tube M5 meets power vd D by the 7th resistance R7, and its grid connects the drain electrode of the 3rd NMOS tube M3; The drain electrode of the 6th NMOS tube M6 meets power vd D by the 8th resistance R8, and its grid connects the drain electrode of the first NMOS tube M1; The source electrode of the 5th NMOS tube M5 and the 6th NMOS tube M6 connects the drain electrode of the 7th NMOS tube M7 jointly; The grid of the 7th NMOS tube M7 connects the source electrode of the 3rd NMOS tube M3 and the grid of the 4th NMOS tube M4, its source ground; The tie point of the 8th resistance R8 and the 6th NMOS tube M6 is the output terminal of amplifying circuit.

Principle of work of the present utility model is:

After photodiode produces Weak current change under the effect of light signal, the current signal that amplifying circuit is produced is converted into voltage signal and amplifies, in amplifying circuit of the present utility model, resistance R1, R2, R3 and NMOS tube M1, M2 forms first order amplifying circuit, resistance R4, R5, R6 and NMOS tube M3, M4 forms mirror image circuit, resistance R7, R8 and NMOS tube M7, M8, M9 forms second level amplifying circuit, circuit of the present utility model is effectively amplified signal by second amplifying circuit, also by mirror image circuit, the working point of first order amplifying circuit and second level amplifying circuit is consistent simultaneously, thus avoid amplifying signal to occur error, ensure that the validity of signal.

Claims (1)

1. there is a photoelectric sensor for amplifying circuit, comprise photodiode, testing circuit and filtering output circuit; It is characterized in that, also comprise amplifying circuit, described photodiode is connected with amplifying circuit, and the output terminal of amplifying circuit is connected with the input end of testing circuit, and the output terminal of testing circuit is connected with the input end of filtering output circuit;

Described amplifying circuit comprises resistance first resistance R1, the second resistance R2, the 3rd resistance R3, the 4th resistance R4, the 5th resistance R5, the 6th resistance R6, the 7th resistance R7, the 8th resistance R8, the first NMOS tube M1, the second NMOS tube M2, NMOS tube the 3rd NMOS tube M3, the 4th NMOS tube M4, the 5th NMOS tube M5, the 6th NMOS tube M6 and the 7th NMOS tube M7; The negative pole of photodiode connects the source electrode of the first NMOS tube M1 and the grid of the second NMOS tube M2, its plus earth; The drain electrode of the first NMOS tube M1 meets power vd D by the first resistance R1, and its grid connects the drain electrode of the second NMOS tube M2, and its source electrode is by the second resistance R2 ground connection; The drain electrode of the second NMOS tube M2 meets power vd D by the 3rd resistance R3, and its grid connects the source electrode of the first NMOS tube M1, its source ground;

The drain electrode of the 3rd NMOS tube M3 meets power vd D by the 4th resistance R4, and its grid connects the drain electrode of the 4th NMOS tube M4, and its source electrode is by the 5th resistance R5 ground connection; The drain electrode of the 4th NMOS tube M4 meets power vd D by the 6th resistance R6, its source ground;

The drain electrode of the 5th NMOS tube M5 meets power vd D by the 7th resistance R7, and its grid connects the drain electrode of the 3rd NMOS tube M3; The drain electrode of the 6th NMOS tube M6 meets power vd D by the 8th resistance R8, and its grid connects the drain electrode of the first NMOS tube M1; The source electrode of the 5th NMOS tube M5 and the 6th NMOS tube M6 connects the drain electrode of the 7th NMOS tube M7 jointly; The grid of the 7th NMOS tube M7 connects the source electrode of the 3rd NMOS tube M3 and the grid of the 4th NMOS tube M4, its source ground; The tie point of the 8th resistance R8 and the 6th NMOS tube M6 is the output terminal of amplifying circuit.