CN104850252A - Touch panel and manufacturing method thereof - Google Patents
Touch panel and manufacturing method thereof Download PDFInfo
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- CN104850252A CN104850252A CN201410054577.0A CN201410054577A CN104850252A CN 104850252 A CN104850252 A CN 104850252A CN 201410054577 A CN201410054577 A CN 201410054577A CN 104850252 A CN104850252 A CN 104850252A
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Abstract
The invention relates to a touch panel and a manufacturing method thereof. The manufacturing method comprises the following steps: providing a transparent substrate, forming a transparent conductive layer and a metal layer on the transparent substrate in layer by layer or at the same time, patterning the transparent conductive layer and the metal layer to form a plurality of first sensing serial parts, a plurality of second sensing pads and a terminal circuit, forming insulating layers on the plurality of first sensing serial parts and the plurality of second sensing pads, and patterning the insulating layers; forming a plurality of second bridging lines on the insulating layers through the adoption of an ink-jet method. The ink-jet material used in the method can be selected from nano-silver, graphene or carbon nano tubes. Furthermore, the invention provides a touch panel, the material of the nano conductors contained by the touch panel is nano-silver lines, nano-copper alloy lines, graphene or carbon nano tubes.
Description
Technical field
System of the present invention relates to a kind of contact panel and manufacture method thereof.
Background technology
In the structure of projected capacitive touch panel (Projective Capacitive Touch Panel) common at present, can be divided into haply: glass/film/film (Glass/Film/Film), glass/film (Glass/Film), single glass solution (One Glass Solution, OGS), and single-film solution (One Film Solution, OFS) etc.In the topological design of touch control electrode, common is individual layer biaxially touch-control sensing structure (Single ITO, SITO), or the upper and lower two-sided touch-control sensing structure (Double ITO, DITO) of individual layer.And in SITO structure, signal shorts is not produced for making X/Y axial electrode cross-over connection (bridge joint), usually at the bridge joint place of axial serial design insulation course, and form bridging conductor more on the insulating layer, make touching signals transmitted, and make the touch-control sensing electrode of the axis of X/Y unlikely generation interference erroneous judgement.
In the manufacture process of aforementioned contact panel, frequent use film-plating process (metal level or transparency conducting layer), collocation gold-tinted processing procedure (such as, photoetching) the step such as coating, exposure, development, etching, removal photoresist manufacture the bridge formation wire of the individual layer biaxially touch-control sensing structure of projected capacitive touch panel, i.e. bridging conductor.
But, the patterning process step of general traditional method for making is complicated, manufacturing cost is higher, and after carrying out the gold-tinted processing procedure of multiple tracks, the quality of etching degree of stability and etching control is wayward, and after metal coating, the metal bridge formation bending resistance folding endurance that gold-tinted processing procedure is produced is poor, makes the acceptance rate of contact panel be affected.
In sum, the manufacture process of existing contact panel still has a lot of defect, need treat that a good solution is overcome.
Summary of the invention
Because the shortcoming of aforementioned contact panel on processing procedure, the present inventor etc. are devoted to the manufacture method studying contact panel.
The invention provides a kind of manufacture method of contact panel, it comprises the following steps: first, provides transparent base; Then, transparency conducting layer is formed over the transparent substrate; Then, pattern for transparent conductive layer is formed over the transparent substrate multiple first sensing serial and multiple second sensor pad, wherein multiple first sensing serial has multiple first sensor pad and many first bridging lines, and multiple first sensor pad arranges with array way, many the first bridging lines and multiple first sensor pad are electrically connected along first direction, and multiple second sensor pad arranges with array way, multiple second sensor pad and the interlaced setting of multiple first sensor pad; Then, multiple first sensing serials and multiple second sensor pad form insulation course, and by patterning insulating layers, makes this insulation course be covered in described many first bridging lines at least partly; And form many second bridging lines on the insulating layer, the second bridging line is nm-class conducting wire, many nm-class conducting wires and adjacent multiple second sensor pads are electrically connected along second direction, to form multiple second sensing serial.
The present invention also provides the manufacture method of another kind of contact panel, and it comprises the following steps: first, provides transparent base; And, form transparency conducting layer and metal level successively over the transparent substrate; Then, by metal level and pattern for transparent conductive layer, to be formed, there is multiple first sensing serials of metal level, multiple second sensor pad and at least one terminal circuit, wherein multiple first sensing serial has multiple first sensor pad and many first bridging lines respectively, and multiple first sensor pad arranges with array way, and many first bridging lines and multiple first sensor pad are electrically connected along first direction, multiple second sensor pad arranges with array way, and multiple second sensor pad and the interlaced setting of multiple first sensor pad; Moreover, this metal level be positioned on multiple first sensing serials and multiple second sensor pad is removed; Then, multiple first sensing serials and multiple second sensor pad form insulation course, and by patterning insulating layers, makes this insulation course be covered in described many first bridging lines at least partly; And, form many second bridging lines on which insulating layer, second bridging line is nm-class conducting wire, and many nm-class conducting wires and multiple second sensor pad are electrically connected along second direction, form multiple second sensing serial, at least one terminal circuit and multiple first senses serial and multiple second and senses connected in series.
Accordingly, as mentioned above, the manufacture method of contact panel provided by the present invention, the second bridging line formed by nm-class conducting wire, and there is splendid electric conductivity, and the manufacturing cost of contact panel can be reduced significantly, also can omit fabrication steps (such as, exposure after coating and etching etc.), and the acceptance rate of the production of etching control degree of difficulty and raising contact panel can be reduced.
Preferably, the method forming many nm-class conducting wires can be ink-jet method, the micro-print method of nanometer, photoetching process, print process or other equivalence formation method.Moreover the material of many second bridging lines can be Nano Silver, Nanometer Copper alloy wire, Graphene, carbon nano-tube or other equivalent material.Wherein, Nanometer Copper alloy wire also can comprise nano nickel copper cash, nanometer cobalt copper cash, nano-titanium copper cash, nanometer tin aldary or other equivalent material.
Preferably, after many nm-class conducting wires can being formed on the insulating layer, then form anti-reflecting layer on many nm-class conducting wires and terminal circuit.Wherein, the material of anti-reflecting layer can be dark conductive material, and it is mainly used in the light reflection that reduction metal material causes, and it can be ITO, TiN, TiAlCN, TiAlN, NbO, NbN, Nb
2o
x(wherein 3≤x≤5), TiC, SiC or WC.Certainly, also can be dark isolation material, such as, can be CuO, CoO, WO
3, MoO
3, CrO, CrON, Nb
2o
5.
Preferably, the mode forming terminal circuit can use print process, namely prints conductive silver paste circuit, or can use copper wiring or other equivalent processing procedure.In addition, terminal circuit also can be connected with flexible PCB.
Preferably, method provided by the present invention can comprise the step of control chip hot pressing on the anti-reflecting layer of terminal circuit further; And be included in further patterning is carried out to transparency conducting layer after on sensing structure, form adhesive layer, then cut and there is adhesive layer in the transparent base on sensing structure surface, to form the step of multiple sheet sensing base material.Preferably, sheet sensing base material is attached on hard transparent substrate by adhesive layer.
Preferably, method provided by the present invention further after formation many second bridging lines, can form transparent insulation protective seam on sensing structure.Wherein, the material of transparent insulation protective seam of the present invention can be silicon dioxide (SiO
2), organic insulation material, inorganic insulation material or photoresist, wherein photoresist can be liquid photoresist or dry film photoresist, its for prevent the aqueous vapor of sensing structure invade or oxidation protection quite excellent.In addition, transparent insulation protective seam of the present invention can be only the region being covered in terminal circuit and control chip electric connection.
In addition, the present invention also provides a kind of contact panel, and it mainly can comprise: transparent base, multiple first sensing serial, multiple second sensor pad, multiple insulating mat and many second bridging lines.Wherein, multiple first sensing serials and multiple second sensor pad are positioned on transparent base, wherein multiple first sensing serial comprises multiple first sensor pad and many first bridging lines, multiple first sensor pad arranges with array way, many the first bridging lines and multiple first sensor pad are electrically connected along first direction, multiple second sensor pad with array way arrangement and with the interlaced setting of multiple first sensor pad; Moreover multiple insulating mat is positioned in many first bridging lines of multiple first sensing serial; In addition, many second bridging lines are nm-class conducting wire, are positioned on multiple insulating mat, and wherein many nm-class conducting wires and adjacent multiple second sensor pads are electrically connected along second direction, to form multiple second sensing serial.
Accompanying drawing explanation
Figure 1A represents the vertical view of the contact panel of manufacture method of the present invention 1st embodiment.
Figure 1B represents the diagrammatic cross-section of the manufacture process of manufacture method of the present invention 1st embodiment.
Fig. 2 A represents the vertical view of the contact panel of manufacture method of the present invention 2nd embodiment.
Fig. 2 B represents the diagrammatic cross-section of the manufacture process of manufacture method of the present invention 2nd embodiment.
Fig. 2 C represents the schematic diagram of control chip hot pressing in terminal circuit in manufacture method of the present invention 2nd embodiment.
Fig. 2 D represents the schematic diagram forming transparent insulation protective seam in manufacture method of the present invention 2nd embodiment on sensing structure.
Fig. 3 represents the diagrammatic cross-section of contact panel one of the present invention more preferably embodiment.
Embodiment
The present invention carries out exemplary illustration in detail with following specific embodiment further.
< the 1st embodiment >
Please simultaneously see Figure 1A and Figure 1B, it represents the contact panel manufacture method of the present invention the 1st embodiment, comprise: pliability transparent base 101 is provided, and the material of pliability transparent base 101 such as can be PEN (polyethylene naphthalate, PEN), polyethylene terephthalate (polyethylene terephthalate, PET), polyethersulfone (Polyether sulfone, PES), pliability glass, polymethylmethacrylate (Polymethylmethacrylate, PMMA), polycarbonate (Polycarbonate, or polyimide (polyimide PC), PI), also can be the multilayer materials of above-mentioned material.Moreover, also can be formed with the base material of the transparent stack architecture of multilayer on aforementioned material, and multi-layer transparent stack architecture such as can be anti-reflecting layer.
Then, pliability transparent base 101 is formed transparency conducting layer 102, and the material of transparency conducting layer 102 can be, the potpourri of such as, a kind of or above-mentioned material in indium tin oxide, indium oxide, zinc paste, indium zinc oxide, the zinc paste doped with aluminium and the tin oxide doped with antimony.
Moreover, by transparency conducting layer 102 patterning to form multiple first sensing serial 121 and multiple second sensor pad 122.Wherein, this step patterning that photoetching (photolithography) and the etching gold-tinted processing procedure such as (etching) can be utilized to carry out transparency conducting layer 102.
Then, multiple first sensing serials 121 and multiple second sensor pad 122 form metal level 103, and wherein the structure of metal level 103 can be at least one deck conductive metal layer or multilayer conductive metal level.The material of conductive metal layer can be conducting metal or the electrical conductivity alloies such as aldary, aluminium alloy, gold, silver, aluminium, copper, molybdenum.In addition, the structure of multilayer conductive metal level, can be the stack architecture of such as molybdenum layer/aluminium lamination/molybdenum layer, or can be one or more materials and the multilayer conductive metal-layer structure of storehouse of selecting from the conducting metals such as aldary, aluminium alloy, gold, silver, aluminium, copper, molybdenum or electrical conductivity alloy.In this step, metal level 103 can use physical vaporous deposition (PVD), chemical vapour deposition technique (CVD) or sputtering method to be formed.
Further, by metal level 103 patterning to form multiple terminal circuit 131; Similarly, this step can utilize the gold-tinted processing procedures such as chemical etching to carry out the patterning of metal level 103.
Then, multiple first sensing serials 121 and multiple second sensor pad 122 form insulation course 104, and patterning is carried out to insulation course 104.Wherein, the material of insulation course 104 can be silicon dioxide, organic insulation material, inorganic insulation material or photoresist, and can use film-plating process to deposit.Patterning as insulation course 104 can adopt the gold-tinted processing procedures such as general micro-shadow and etching equally.
Finally, coat to form many second bridging lines 105 on insulation course 104 by ink-jet method respectively by electrically conductive ink, itself and adjacent two the second sensor pads 122 are electrically connected, and form multiple second sensing serial 123 with this.The electrically conductive ink that the present embodiment uses refers to and can be printed on non-conductive substrate, makes it have the ink of conduction current and eliminating buildup of static electricity ability.Electrically conductive ink is made up of conductive material, binder, solvent and other auxiliary agent, and wherein conductive material can select nano-silver thread, Nanometer Copper alloy wire, Graphene or carbon nano-tube, is more preferably nano-silver thread.But, in the present embodiment, electrically conductive ink is for containing nano-silver thread, and the wire range of selected nano-silver thread is more preferably 20 ~ 300 nanometers, be more preferably 20 ~ 50 nanometers, and according to the larger principle of wire diameter its surface area less, therefore electrically conductive ink containing Nano Silver is also strong for the adhesion of various substrate.
Moreover the nano-silver thread selected by the present embodiment is when being prepared into the spendable electrically conductive ink of ink-jet method, and it has lower sintering temperature, is more preferably 150 DEG C ~ 300 DEG C, therefore has the conductivity better compared with conventional melt metal.For example, the conductivity of the Nano Silver at sintering temperature 240 DEG C is 2.22 × 10
7(s/m).Meanwhile, sintering temperature lower thus, the electrically conductive ink containing Nano Silver can be applicable on the lower substrate of glass transition temperature (Tg), such as: plastic plate or flexible base plate etc.
In addition, as previously mentioned, the present embodiment makes electrically conductive ink form many second bridging lines 105 by ink-jet method, and wherein used ink-jet method can be carried out with Thermal Bubble Ink-jet Printer method or piezoelectric-actuated ink-jet method according to different implementation condition.Such as, the ink-jet for piezoelectric-actuated can be high temperature resistant, and this ink-jet can not be vaporized because of high temperature, can have preferably permanance.But in other embodiments of the invention, many second bridging lines 105 (nm-class conducting wire) can also made by photoetching process, the micro-print method of nanometer or print process.
In addition, in another embodiment of the invention, electrically conductive ink also can replace nano-silver thread by carbon nano-tube, wherein carbon nano-tube can made by arc discharge method, laser evaporization method or organic vapor phase deposition method (Organic Chemical Vapor Deposition), certainly also not as limit, other equivalent processing procedure also can apply in the present embodiment.In this embodiment, the electrically conductive ink containing carbon nano-tube is a kind of carbon nano-tube solution, can is deposited on conductive film or substrate by ink-jet method and form many second bridging lines 105 equally.
Again, in another embodiment of the present invention, electrically conductive ink of the present invention also can comprise carbon nano-tube and silver-colored combination.Wherein, carbon nano-tube can be the carbon nano-tube of single wall (SWNTs) or many walls (MWNTs), is more preferably Single Walled Carbon Nanotube.When using Single Walled Carbon Nanotube, this Single Walled Carbon Nanotube can be 1:1 ~ 5 with the ratio of silver; And when using multi-walled carbon nano-tubes, multi-walled carbon nano-tubes can be 1:1 ~ 100 with the ratio of silver.Accordingly, because bridging line is made by the materials such as nano-silver thread, Nanometer Copper alloy wire, Graphene or carbon nano-tube, therefore the second bridging line 105 has excellent bending resistance folding endurance.
< the 2nd embodiment >
Please simultaneously see Fig. 2 A and Fig. 2 B, it represents the contact panel manufacture method of the 2nd embodiment of the present invention, the difference of the 2nd embodiment and the 1st embodiment is that the 2nd embodiment is first plated film transparency conducting layer and metal level, and then with gold-tinted etch patterning, finally manufacture the method for the second bridging line with ink-jet method.The step of the 2nd embodiment is followed successively by:
(1) pliability transparent base 201 is provided;
(2) on pliability transparent base 201, transparency conducting layer 202 and metal level 203 is formed successively;
(3) by transparency conducting layer 202 and metal level 203 patterning, to form multiple first sensing serial 221 and multiple second sensor pads 222 with this metal level 203, wherein multiple first sensing serial 221 has multiple first sensor pad 224 and many first bridging lines 225 respectively, multiple first sensor pad 224 arranges with array way, many the first bridging line 225 is electrically connected along first direction D1 with multiple first sensor pad 224, multiple second sensor pad 222 arranges with array way, multiple second sensor pad 222 and the interlaced setting of multiple first sensor pad 224;
(4) metal level 203 be positioned on multiple first sensing serials 221 and multiple second sensor pad 222 is removed to form terminal circuit 231;
(5) in multiple first sensing serials 221 and multiple second sensor pad 222, insulation course 204 is formed, and by insulation course 204 patterning;
(6) by ink-jet method, electrically conductive ink is coated on insulation course 204 respectively to form many second bridging lines 205, i.e. nm-class conducting wire, and every bar second bridging line 205 is electrically connected with adjacent two the second sensor pads 222, form multiple second sensing serial 223 with this.Wherein electrically conductive ink contains Nano Silver, and the particle size range of this Nano Silver is 20 ~ 50 nanometers;
(7) in many second bridging lines 205 and terminal circuit 231, anti-reflecting layer 24 is formed, it can utilize the gold-tinted processing procedures such as chemical etching or other equivalent processing procedure to be formed, and anti-reflecting layer 24 mainly can reduce light is reflected because refractive index is different, and then increase the penetrance of light.Wherein, the material of anti-reflecting layer 24 can select ITO, TiN, TiAlCN, TiAlN, NbO, NbN, Nb
2o
x(wherein 3≤x≤5), TiC, SiC, WC, CuO, CoO, WO
3, MoO
3, CrO, CrON or Nb
2o
5;
Whole sensing structure is formed adhesive layer 25, then cuts and there is the pliability transparent base 201 of adhesive layer 25 on sensing structure surface, and be attached on hard transparent substrate 4 by adhesive layer 25.Wherein, adhesive layer 25 can use screen printing, brushing, spraying, spin coating or dipping to be formed, and the material as adhesive layer 25 can be policapram, poly-quinone (polyquinone), the thermosetting of benzocyclobutene or other equivalence or thermoplastic.
Certainly, after above-mentioned fabrication steps (7), a step also can be comprised, by control chip C hot pressing on the anti-reflecting layer 24 of terminal circuit 231, as shown in Figure 2 C.In addition; in step (7), transparent insulation protective seam 26 can also be used to replace anti-reflecting layer 24, that is on sensing structure, form transparent insulation protective seam 26; as shown in Figure 2 D, and transparent insulation protective seam 26 is mainly used in preventing aqueous vapor from invading and causing oxidation.Wherein, the material of transparent insulation protective seam 26 can be silicon dioxide (SiO
2), organic insulation material, inorganic insulation material or photoresist, wherein photoresist can be liquid photoresist or dry film photoresist.
Similarly, the generation type of many articles of the second bridging lines 205 of the present invention the 2nd embodiment can adopt the micro-print method of photoetching process, nanometer or print process to be formed, and the material of wherein many second bridging lines 205 can be the combination of nano-silver thread, Nanometer Copper alloy wire, Graphene, carbon nano-tube or above-mentioned material.
Accordingly, by the explanation of above-described embodiment, the manufacture method of contact panel provided by the present invention is by electric conductivity splendid for the bridging line of imparting contact panel, and the manufacturing cost of contact panel can be reduced significantly, fabrication steps can be omitted (such as again, exposure after coating and etching etc.), and etching control degree of difficulty can be reduced and improve the production acceptance rate of contact panel.
See Fig. 3, it represents a kind of contact panel utilized made by method provided by the present invention.As shown in FIG., multiple first sensing serial 321, multiple second sensor pad 322 and multiple terminal circuit 331 are formed on pliability transparent base 301.Wherein, multiple first sensing serial 321 comprises multiple first sensor pad (not shown) and many first bridging lines 325, multiple first sensor pad arranges with array way, many the first bridging line 325 is electrically connected along first direction (direction perpendicular to paper) and multiple first sensor pad, multiple second sensor pad 322 arranges with array way, multiple second sensor pad 322 and the interlaced setting of multiple first sensor pad.
In addition, also show multiple insulating mat 304 in Fig. 3, it lays respectively in many first bridging lines 325 of multiple first sensing serial 321.In addition, many second bridging lines 305 lay respectively on multiple insulating mat 304.In the contact panel of the present embodiment, many second bridging lines 305 are nm-class conducting wire, and many second bridging lines 305 are electrically connected along second direction D2 (with reference to figure 2A) with multiple second sensor pad 322, to form multiple second sensing serial 323.
In addition, although only show a terminal circuit 331 and one second in figure to sense serial 323 and be electrically connected, but be actually and possess multiple terminal circuit 331, and its one end senses serial 321 and multiple second respectively senses serial 323 be connected with multiple first, the other end is then electrically connected with a flexible circuit board (not shown) respectively.Moreover second bridging line 305 of the present embodiment is nm-class conducting wire, and it is with made by ink-jet method, photoetching process, the micro-print method of nanometer or print process.
Wherein, the material of the second bridging line 305 can be nano-silver thread, Nanometer Copper alloy wire, Graphene or carbon nano-tube.Accordingly, be there is by the second bridging line 305 made by preceding method and material the advantage of pliability and not easy fracture, the acceptance rate promoting contact panel and produce can be had in volume to volume processing procedure, and make contact panel have preferably bending character.
Above-described embodiment is citing for convenience of description only, and the interest field that the present invention advocates from should being as the criterion with described in claim, but not is only limitted to above-described embodiment.
Symbol description
101,201,301 pliability transparent bases
102,202 transparency conducting layers
224 first sensor pads
121,221,321 first sensing serials
225,325 first bridging lines
122,222,322 second sensor pads
123,223,323 second sensing serials
103,203 metal levels
131,231,331 terminal circuits
104,204 insulation courses
105,205,305 second bridging lines
24 anti-reflecting layers
25 adhesive layers
26 transparent insulation protective seams
304 insulating mats
4 hard transparent substrates
C control chip
D1 first direction
D2 second direction.
Claims (10)
1. a manufacture method for contact panel, it comprises:
Transparent base is provided;
This transparent base forms transparency conducting layer;
By this pattern for transparent conductive layer, to form multiple first sensing serial and multiple second sensor pad, wherein said multiple first sensing serial has multiple first sensor pad and many first bridging lines, described multiple first sensor pad arranges with array way, described many first bridging lines and adjacent described multiple first sensor pads are electrically connected along first direction, described multiple second sensor pad with array way arrangement and with the interlaced setting of described multiple first sensor pad;
Form insulation course and by its patterning, make this insulation course be covered in described many first bridging lines at least partly; And
Form many nm-class conducting wires on which insulating layer, described many nm-class conducting wires and adjacent described second sensor pad are electrically connected along second direction, to form multiple second sensing serial.
2. a manufacture method for contact panel, it comprises:
Transparent base is provided;
This transparent base forms transparency conducting layer and metal level successively;
By this metal level and this pattern for transparent conductive layer, to be formed, there is multiple first sensing serials of this metal level, multiple second sensor pad and at least one terminal circuit, wherein said multiple first sensing serial has multiple first sensor pad and many first bridging lines respectively, described multiple first sensor pad arranges with array way, described many first bridging lines and adjacent described multiple first sensor pads are electrically connected along first direction, described multiple second sensor pad with array way arrangement and with the interlaced setting of described multiple first sensor pad;
This metal level be positioned on described multiple first sensing serials and described multiple second sensor pad is removed;
Form insulation course and by its patterning, make this insulation course be covered in described many first bridging lines at least partly; And
Form many nm-class conducting wires on which insulating layer, described many nm-class conducting wires and adjacent described multiple second sensor pads are electrically connected along second direction, to form multiple second sensing serial, at least one terminal circuit described and described multiple first senses serial and described multiple second and senses connected in series.
3. the manufacture method of contact panel as claimed in claim 1 or 2, the method wherein forming described many nm-class conducting wires is ink-jet method, the micro-print method of nanometer, photoetching process or print process.
4. the manufacture method of contact panel as claimed in claim 1 or 2, the material of wherein said many nm-class conducting wires is at least one selected from the group that nano-silver thread, Nanometer Copper alloy wire, Graphene and carbon nano-tube are formed.
5. the manufacture method of contact panel as claimed in claim 4, wherein said Nanometer Copper alloy wire is at least one selected from the group that nano nickel copper cash, nanometer cobalt copper cash, nano-titanium copper cash and nanometer tin aldary are formed.
6. the manufacture method of contact panel as claimed in claim 1 or 2, after wherein forming described many nm-class conducting wires on which insulating layer, described many nm-class conducting wires forms anti-reflecting layer.
7. the manufacture method of contact panel as claimed in claim 6, wherein the material in this reflection horizon is dark conductive material.
8. a contact panel, it comprises:
Transparent base;
Be positioned at multiple first sensing serial and multiple second sensor pads on this transparent base, wherein said multiple first sensing serial comprises multiple first sensor pad and many first bridging lines, described multiple first sensor pad arranges with array way, described many first bridging lines and adjacent described multiple first sensor pads are electrically connected along first direction, described multiple second sensor pad with array way arrangement and with the interlaced setting of described multiple first sensor pad;
Multiple insulating mat, it is laid in described many first bridging lines respectively at least partly; And
Many nm-class conducting wires, it is laid on described multiple insulating mat respectively, and described many nm-class conducting wires and adjacent described multiple second sensor pads are electrically connected along second direction, to form multiple second sensing serial.
9. contact panel as claimed in claim 8, at least one that the material of wherein said many nm-class conducting wires is selected from the group that nano-silver thread, Nanometer Copper alloy wire, Graphene and carbon nano-tube are formed.
10. contact panel as claimed in claim 8, wherein said many nm-class conducting wires comprise anti-reflecting layer respectively.
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|---|---|---|---|
| CN201410054577.0A CN104850252A (en) | 2014-02-18 | 2014-02-18 | Touch panel and manufacturing method thereof |
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|---|---|---|---|
| CN201410054577.0A CN104850252A (en) | 2014-02-18 | 2014-02-18 | Touch panel and manufacturing method thereof |
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Application publication date: 20150819 |