CN104849257A - Small ultraviolet frequency sweeping laser-based resonance Raman spectrum detection system and method - Google Patents

Small ultraviolet frequency sweeping laser-based resonance Raman spectrum detection system and method Download PDF

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CN104849257A
CN104849257A CN201510295751.5A CN201510295751A CN104849257A CN 104849257 A CN104849257 A CN 104849257A CN 201510295751 A CN201510295751 A CN 201510295751A CN 104849257 A CN104849257 A CN 104849257A
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laser
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ultraviolet
raman
frequency
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CN104849257B (en
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万雄
刘鹏希
章婷婷
况耀武
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Shanghai Institute of Technical Physics of CAS
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Shanghai Institute of Technical Physics of CAS
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Abstract

The invention discloses a small ultraviolet frequency sweeping laser-based resonance Raman spectrum detection system method. The small ultraviolet frequency sweeping laser based resonance Raman spectrum detection system comprises a small ultraviolet frequency sweeping laser, a main controller and a data analysis system, wherein the small ultraviolet frequency sweeping laser is composed of a pulse semiconductor laser assembly, an optical fiber laser assembly and an ultraviolet frequency sweeping optical assembly; the testing point of a detected object is located in a molecular composition of a material, has the intensity of a stokes Raman line of molecules with the ultraviolet frequency sweeping wavelength corresponding to the resonance Raman excitation wavelength is enhanced by tens of thousands to millions of times, and thus, multiple molecules of a sample, having extremely low concentration, can be detected. The system has the beneficial effects that an electronic-optical fiber integrated structure is adopted, so that an ultraviolet frequency sweeping laser source is miniaturized; an acousto-optic tunable filter is adopted, and thus, the ultraviolet laser frequency can be rapidly adjusted; and according to the ultraviolet frequency sweeping resonance Raman method, fluorescence interference is eliminated, the high-sensitivity resonance Raman detection of the multiple molecules of the sample can be achieved through fast frequency sweeping.

Description

Based on resonance Raman spectroscopy detection system and the method for small ultraviolet sweeping laser
Technical field
The present invention relates to a kind of laser spectrum detection method, particularly relate to a kind of resonance Raman spectroscopy detection method based on small ultraviolet sweeping laser, belong to photodetection field.
Background technology
When penetrating detected object with monochromatic probe illumination, most light can reflect by original direction, and fraction forms scattered light by different scattered through angles.In vertical direction, except having except the Rayleigh scattering of same frequency with former incident light, also having some symmetrical Raman lines that positive negative frequency shift occurs with incident light frequency, claiming Raman scattering.The intensity of Raman line and frequency displacement size and detected object ingredient vibrates or rotational energy level is relevant, therefore Raman spectrum analysis can be used to the information that obtains about molecular vibration or rotation.Laser Roman spectroscopic analysis of composition technology has been widely used in the qualification of various material, the research of molecular structure.
Conventional laser Raman detection also exists two deficiencies, namely Raman scattering signal faint and be subject to fluorescence interference impact.Adopt uv raman spectroscopy technology, namely with the laser excitation detection sample of ultraviolet band, its Stokes Raman scattering is also usually located at ultraviolet section, is separated with the visible light wave range at fluorescence place, therefore effectively can eliminate fluorescence interference; Adopt resonance Raman spectroscopy technology, excitation laser frequency and institute molecular detection electronic transition frequency close to or equal time, absorption or the resonance of strong row can be caused, some Raman spectrum band strength of molecule is caused sharply to strengthen millions of times, can greatly strengthen Raman scattered signal, be conducive to Raman spectrum analysis.Comprehensively both ultraviolet Resonance Ramans can realize the high sensitivity detection to a kind of molecular distribution, but helpless for the high sensitivity detection of different kinds of molecules.
If adopt sweeping laser to excite at ultraviolet excitation band, just can realize exciting the resonance raman of different kinds of molecules, thus realize detecting the high sensitivity Raman spectrum of different kinds of molecules.
Summary of the invention
The object of the present invention is to provide and a kind ofly to excite based on small ultraviolet sweeping laser, can realize the Raman spectrum detection method of different kinds of molecules high sensitivity detection, overcome the deficiency of normal Raman detection, obtain the molecular composition of testing sample all sidedly accurately.
The present invention is achieved like this, and its method step is:
The resonance Raman spectroscopy detection system based on small ultraviolet sweeping laser that the present invention proposes, comprises small ultraviolet frequency swept laser and master controller and data analysis system.Wherein small ultraviolet frequency swept laser is made up of impulse semiconductor laser assembly, fiber laser assembly and ultraviolet frequency sweep optical module.
Impulse semiconductor laser assembly is for generation of the pulse seed laser of pumped optical fibre laser assembly.It comprises FPGA (note: i.e. Field Programmable Gate Array, field programmable gate array) pulse producer, shaping pulse and power amplification circuit, semiconductor laser device driving circuit, fiber coupler, the first Polarization Controller and optoisolator.Wherein semiconductor laser device driving circuit is made up of field effect transistor driving chip, high-speed high-power field effect transistor, laser diode discharge loop.
Fiber laser assembly comprises semiconductor laser, photo-coupler, ring cavity, the first negative GVD (note: i.e. Group Velocity Dispersion, GVD (Group Velocity Dispersion)) optical fiber, first wave division multiplexer, ytterbium doped optical fiber amplifier, Second Wave division multiplexer, the second negative GVD optical fiber, the second Polarization Controller, the 3rd Polarization Controller, Faraday isolator and the 4th Polarization Controller, the pulse seed laser sent for paired pulses semiconductor laser elements carries out power amplification and pulse mode-locked compression.
Ultraviolet frequency sweep optical module comprises PCF (note: i.e. photonic crystal fiber, photonic crystal fiber) coupling mechanism, PCF, PCF output interface, AOTF (note: i.e. acousto-optic tunable filter, acousto-optic tunable filter) and frequency multiplication focus module, for first producing super continuous spectrums pulse laser, then frequency sweep frequency multiplication are to ultraviolet section, realize ultraviolet scanning frequency pulse Laser Focusing and export.
Master controller and data analysis system, containing performing the hardware circuit and data analysis software that control, for control AOTF, semiconductor laser, FPGA pulse producer and ultraviolet Raman spectrometer, and the output spectrum signal receiving ultraviolet Raman spectrometer carries out spectral data analysis.
The detection of frequency sweep resonance Raman spectroscopy is carried out according to the following steps:
(1) master controller and data analysis system send first steering order for starting AOTF, and select the initial operation wavelength λ of frequency sweep 1;
(2) master controller and data analysis system send second steering order for setting the pulsed frequency of FPGA pulse producer and making it startup work;
(3) master controller and data analysis system send the 3rd steering order for starting semiconductor laser;
(4) frequency that FPGA pulse producer sends is that first the electric pulse of 80MHz carries out shaping pulse through shaping pulse and power amplification circuit, regulate high level dutycycle, the frequency forming nanosecond is the electric pulse of 80MHz, then after carrying out power amplification, send into the control pin of the field effect transistor driving chip in semiconductor laser device driving circuit, it is that the nanosecond pulse signal of 80MHz is for controlling conducting and the cut-off of high-speed high-power field effect transistor that the output pin of field effect transistor driving chip produces frequency, for controlling the discharge and recharge of laser diode discharge loop, making the laser diode in laser diode discharge loop produce repetition is the nanosecond pulse seed laser of 80MHz.This pulse seed laser in fiber coupler coupled into optical fibres, then enters fiber laser assembly through the first Polarization Controller and optoisolator transmission.The issuable echo interference of fiber laser assembly is eliminated in the effect of the first Polarization Controller and optoisolator;
(5) semiconductor laser in fiber laser assembly, the continuous pumping laser beam of launching enters ring cavity with both direction after photo-coupler two decile, after first wave division multiplexer and Second Wave division multiplexer, from both direction pumping ytterbium doped optical fiber amplifier.The nanosecond pulse seed laser that impulse semiconductor laser assembly exports carries out power amplification through ytterbium doped optical fiber amplifier, this nanosecond pulse laser is first through the first negative GVD optical fiber simultaneously, pulse obtains compression, because ytterbium doped optical fiber amplifier has positive GVD, so this nanosecond pulse have passed through stretching, again after the second negative GVD optical fiber, pulse obtains second compression again, carries out (chirp) compensation of warbling in ring cavity.3rd Polarization Controller, Faraday isolator and the 4th Polarization Controller form a resonator, utilize nonlinear polarization rotation effect, when two orthogonal polarization components of a pulse are transmitted in a fiber.The polarization state change of the intensity-dependent caused due to Self-phase modulation and Cross phase modulation effect can form equivalent saturable absorber, its physical mechanism and Ke Er optical gate similar, utilize the nonlinear birefringence effect in optical fiber, ultrashort femtosecond laser pulse is produced based on the self-locking mode mechanism in nonlinear birefringence optical fiber, and make laser in ring cavity along one-way transmission, export ultraviolet frequency sweep optical module to by the second Polarization Controller;
(6), after the femtosecond laser pulse that fiber laser assembly exports enters PCF by PCF coupling mechanism, super continuous spectrums pulse laser is formed;
(7) this super continuous spectrums pulse laser is after AOTF, and obtaining wavelength is λ 1femtosecond pulsed laser.Comprise two frequency-doubling crystals in frequency multiplication focus module and can realize quadruple, and focusing optical structure can realize the focusing of Ultra-Violet Laser.After entering frequency multiplication focus module from the femtosecond pulsed laser of AOTF output, forming wavelength is 1/4th λ 1repetition be the femtosecond pulsed laser of 80MHz, line focus optical texture focuses in the test point of detected object;
(8) master controller and data analysis system send the 4th steering order startup ultraviolet Raman spectrometer.The Raman signal that test point excites is assembled through signals collecting optical module and is coupled into ultraviolet Raman spectrometer, received and opto-electronic conversion by ultraviolet light photo sensor after inner beam splitting system light splitting, the electric signal of conversion is sent to master controller and data analysis system carries out uv raman spectroscopy signal analysis.In the test point place material molecule composition of detected object, corresponding resonance Raman excitation wavelength is 1/4th λ 1m 1molecule is due to resonance Raman effect, and the intensity of its feature Stokes Raman spectral line will strengthen 10 4to 10 6doubly, therefore can to the M of denier concentration 1molecule detects;
(9) master controller and data analysis system send the operation wavelength λ that steering order selects AOTF 21+ △ λ, △ λ is sweeping steps.From PCF export super continuous spectrums pulse laser after AOTF, obtaining wavelength is λ 2femtosecond pulsed laser.After entering frequency multiplication focus module, forming wavelength is 1/4th λ 2repetition be the femtosecond pulsed laser of 80MHz, line focus optical texture focuses in the test point of detected object.The Raman signal that test point excites is assembled through signals collecting optical module and is coupled into ultraviolet Raman spectrometer, received and opto-electronic conversion by ultraviolet light photo sensor after inner beam splitting system light splitting, the electric signal of conversion is sent to master controller and data analysis system carries out uv raman spectroscopy signal analysis.In the test point place material molecule composition of detected object, corresponding resonance Raman excitation wavelength is 1/4th λ 2m 2molecule is due to resonance Raman effect, and the intensity of its feature Stokes Raman spectral line will strengthen 10 4to 10 6doubly, therefore can to the M of denier concentration 2molecule detects;
(10) repeat step 9, select the operation wavelength λ of AOTF 31+ 2 △ λ.In the test point place material molecule composition of detected object, corresponding resonance Raman excitation wavelength is 1/4th λ 3m 3molecule is due to resonance Raman effect, and the intensity of its feature Stokes Raman spectral line will strengthen 10 4to 10 6doubly, therefore can to the M of denier concentration 3molecule detects;
(11) constantly step 10 is repeated, until select AOTF frequency sweep cut-off operation wavelength λ Ν1+ (N-1) △ λ, selects λ in the present embodiment Ν=1200nm.In like manner, in the test point place material molecule composition of detected object, corresponding resonance Raman excitation wavelength is 1/4th λ Νthe M of (i.e. 300nm) nmolecule is due to resonance Raman effect, and the intensity of its feature Stokes Raman spectral line will strengthen 10 4to 10 6doubly, therefore can to the M of denier concentration nmolecule detects.
The invention has the beneficial effects as follows, have employed electronic optical fibre integral structure, achieve the miniaturization of ultraviolet swept laser source; Adopt acousto-optic tunable filter AOTF, achieve the quick adjustment of Ultra-Violet Laser frequency; Ultraviolet frequency sweep resonance raman method, while the interference of elimination fluorescence, realizes the resonance raman high sensitivity detection of sample different kinds of molecules by rapid frequency-sweeping.
Accompanying drawing explanation
Fig. 1 is present system structure and test philosophy schematic diagram, in figure: 1---impulse semiconductor laser assembly; 2---semiconductor laser device driving circuit; 3---field effect transistor driving circuit; 4---high-speed high-power field effect transistor; 5---laser diode; 6---fiber coupler; 7---the first Polarization Controller; 8---optoisolator; 9---fiber laser assembly; 10---the first negative GVD optical fiber; 11---first wave division multiplexer; 12---ytterbium doped optical fiber amplifier; 13---Second Wave division multiplexer; 14---the second negative GVD optical fiber; 15---the second Polarization Controller; 16---ultraviolet frequency sweep optical module; 17---PCF coupling mechanism; 18---PCF; 19---PCF output interface; 20---AOTF; 21---frequency multiplication focus module; 22---test point; 23---detected object; 24---signals collecting optical module; 25---ultraviolet Raman spectrometer; 26---photo-coupler; 27---master controller and data analysis system; 28---semiconductor laser; 29---ring cavity; 30---the 3rd Polarization Controller; 31---Faraday isolator; 32---the 4th Polarization Controller; 33---FPGA pulse producer; 34---shaping pulse and power amplification circuit.
Note: GVD and group velocity dispersion, GVD (Group Velocity Dispersion); PCF and photonic crystalfiber, photonic crystal fiber; AOTF and acousto-optic tunable filter, i.e. acousto-optic tunable filter; FPGA and field programmable gate array, i.e. field programmable gate array.
Embodiment
The specific embodiment of the invention as shown in Figure 1.
The resonance Raman spectroscopy detection system based on small ultraviolet sweeping laser that the present invention proposes, comprises small ultraviolet frequency swept laser and master controller and data analysis system 27.Wherein small ultraviolet frequency swept laser is made up of impulse semiconductor laser assembly 1, fiber laser assembly 9 and ultraviolet frequency sweep optical module 16.
Impulse semiconductor laser assembly 1 is for generation of the pulse seed laser of pumped optical fibre laser assembly 9.It comprises FPGA pulse producer 33, shaping pulse and power amplification circuit 34, semiconductor laser device driving circuit 2, fiber coupler 6, first Polarization Controller 7 and optoisolator 8.Wherein semiconductor laser device driving circuit 2 is made up of field effect transistor driving chip 3, high-speed high-power field effect transistor 4, laser diode discharge loop 5.
Fiber laser assembly 9 comprises semiconductor laser 28, photo-coupler 26, the negative GVD optical fiber 10 of ring cavity 29, first, first wave division multiplexer 11, ytterbium doped optical fiber amplifier 12, negative GVD optical fiber 14, second Polarization Controller 15 of Second Wave division multiplexer 13, second, the 3rd Polarization Controller 30, Faraday isolator 31 and the 4th Polarization Controller 32, and the pulse seed laser sent for paired pulses semiconductor laser elements 1 carries out power amplification and pulse mode-locked compression.
Ultraviolet frequency sweep optical module 16 comprises PCF coupling mechanism 17, PCF18, PCF output interface 19, AOTF 20 and frequency multiplication focus module 21, for first producing super continuous spectrums pulse laser, then frequency sweep frequency multiplication are to ultraviolet section, realize ultraviolet scanning frequency pulse Laser Focusing and export.
Master controller and data analysis system 27, containing performing the hardware circuit and data analysis software that control, for control AOTF 20, semiconductor laser 28, FPGA pulse producer 33 and ultraviolet Raman spectrometer 25, and the output spectrum signal receiving ultraviolet Raman spectrometer 25 carries out spectral data analysis.
The detection of frequency sweep resonance Raman spectroscopy is carried out according to the following steps:
(1) master controller and data analysis system 27 send first steering order for starting AOTF 20, and select the initial operation wavelength λ of frequency sweep 1, initial operation wavelength selects λ in the present embodiment 1=720nm;
(2) master controller and data analysis system 27 send second steering order for setting the pulsed frequency of FPGA pulse producer 33 and making it startup work, and pulsed frequency is 80MHz in the present embodiment;
(3) master controller and data analysis system 27 send the 3rd steering order for starting semiconductor laser 28;
(4) frequency that FPGA pulse producer 33 sends is that first the electric pulse of 80MHz carries out shaping pulse through shaping pulse and power amplification circuit 34, regulate high level dutycycle, the frequency forming nanosecond is the electric pulse of 80MHz, then after carrying out power amplification, send into the control pin of the field effect transistor driving chip 3 in semiconductor laser device driving circuit 2, it is that the nanosecond pulse signal of 80MHz is for controlling conducting and the cut-off of high-speed high-power field effect transistor 4 that the output pin of field effect transistor driving chip 3 produces frequency, for controlling the discharge and recharge of laser diode (the present embodiment laser diode operation wavelength 780nm) discharge loop 5, making the laser diode in laser diode discharge loop 5 produce repetition is 80MHz, wavelength is the nanosecond pulse seed laser of 780nm.This pulse seed laser in fiber coupler 6 coupled into optical fibres, then enters fiber laser assembly 9 through the first Polarization Controller 7 and optoisolator 8 transmission.The issuable echo interference of fiber laser assembly 9 is eliminated in the effect of the first Polarization Controller 7 and optoisolator 8;
(5) semiconductor laser 28 in fiber laser assembly 9, adopt the continuous semiconductor laser instrument of wavelength 780nm in the present embodiment, the continuous pumping laser beam of launching enters ring cavity 29 with both direction after photo-coupler 26 liang of deciles, after first wave division multiplexer 11 and Second Wave division multiplexer 13, from both direction pumping ytterbium doped optical fiber amplifier 12, the present embodiment adopts the model of LIEKKI company to be that Yb1200-20/400DC-PM double clad mixes ytterbium polarization maintaining optical fibre.The nanosecond pulse seed laser that impulse semiconductor laser assembly 1 exports carries out power amplification through ytterbium doped optical fiber amplifier 12, this nanosecond pulse laser is first through the first negative GVD optical fiber 10 simultaneously, pulse obtains compression, because ytterbium doped optical fiber amplifier 12 has positive GVD, so this nanosecond pulse have passed through stretching, again after the second negative GVD optical fiber 14, pulse obtains second compression again, carries out (chirp) compensation of warbling in ring cavity 29.3rd Polarization Controller 30, Faraday isolator 31 and the 4th Polarization Controller 32 form a resonator, utilize nonlinear polarization rotation effect, when two orthogonal polarization components of a pulse are transmitted in a fiber.The polarization state change of the intensity-dependent caused due to Self-phase modulation and Cross phase modulation effect can form equivalent saturable absorber, its physical mechanism and Ke Er optical gate similar, utilize the nonlinear birefringence effect in optical fiber, ultrashort femtosecond laser pulse is produced based on the self-locking mode mechanism in nonlinear birefringence optical fiber, and make laser in ring cavity 29 along one-way transmission, export ultraviolet frequency sweep optical module 16 to by the second Polarization Controller 15;
(6) after the femtosecond laser pulse that fiber laser assembly 9 exports enters PCF18 (in the present embodiment, the zero-dispersion wavelength of PCF is 780nm) by PCF coupling mechanism 17, form super continuous spectrums pulse laser, in the present embodiment, super continuous spectrums scope is 400nm-1700nm;
(7) this super continuous spectrums pulse laser is after AOTF 20, and obtaining wavelength is λ 1the femtosecond pulsed laser of=720nm.Comprise two frequency-doubling crystals in frequency multiplication focus module 21 and can realize quadruple, and focusing optical structure can realize the focusing of Ultra-Violet Laser.After entering frequency multiplication focus module 21 from the femtosecond pulsed laser of AOTF 20 output, formation wavelength is the repetition of 180nm is the femtosecond pulsed laser of 80MHz, and line focus optical texture focuses in the test point 22 of detected object 23;
(8) master controller and data analysis system 27 send the 4th steering order startup ultraviolet Raman spectrometer 25.The Raman signal that test point 22 excites is assembled through signals collecting optical module 24 and is coupled into ultraviolet Raman spectrometer 25, received and opto-electronic conversion by ultraviolet light photo sensor after inner beam splitting system light splitting, the electric signal of conversion is sent to master controller and data analysis system 27 carries out uv raman spectroscopy signal analysis.In the test point 22 place material molecule composition of detected object 23, corresponding resonance Raman excitation wavelength is the M of 180nm 1molecule is due to resonance Raman effect, and the intensity of its feature Stokes Raman spectral line will strengthen 10 4to 10 6doubly, therefore can to the M of denier concentration 1molecule detects;
(9) master controller and data analysis system 27 send the operation wavelength λ that steering order selects AOTF 20 21+ △ λ, sweeping steps △ λ is chosen as 1nm in the present embodiment.From PCF 18 export super continuous spectrums pulse laser after AOTF 20, obtaining wavelength is λ 2the femtosecond pulsed laser of=721nm.After entering frequency multiplication focus module 21, forming wavelength is 1/4th λ 2the repetition of (i.e. 180.25nm) is the femtosecond pulsed laser of 80MHz, and line focus optical texture focuses in the test point 22 of detected object 23.The Raman signal that test point 22 excites is assembled through signals collecting optical module 24 and is coupled into ultraviolet Raman spectrometer 25, received and opto-electronic conversion by ultraviolet light photo sensor after inner beam splitting system light splitting, the electric signal of conversion is sent to master controller and data analysis system 27 carries out uv raman spectroscopy signal analysis.In the test point 22 place material molecule composition of detected object 23, corresponding resonance Raman excitation wavelength is 1/4th λ 2the M of (i.e. 180.25nm) 2molecule is due to resonance Raman effect, and the intensity of its feature Stokes Raman spectral line will strengthen 10 4to 10 6doubly, therefore can to the M of denier concentration 2molecule detects;
(10) repeat step 9, select the operation wavelength λ of AOTF 20 31+ 2 △ λ.In the test point 22 place material molecule composition of detected object 23, corresponding resonance Raman excitation wavelength is 1/4th λ 3the M of (i.e. 180.50nm) 3molecule is due to resonance Raman effect, and the intensity of its feature Stokes Raman spectral line will strengthen 10 4to 10 6doubly, therefore can to the M of denier concentration 3molecule detects;
(11) constantly step 10 is repeated, until select the frequency sweep cut-off operation wavelength λ of AOTF 20 Ν1+ (N-1) △ λ, selects λ in the present embodiment Ν=1200nm.In like manner, in the test point 22 place material molecule composition of detected object 23, corresponding resonance Raman excitation wavelength is 1/4th λ Νthe M of (i.e. 300nm) nmolecule is due to resonance Raman effect, and the intensity of its feature Stokes Raman spectral line will strengthen 10 4to 10 6doubly, therefore can to the M of denier concentration nmolecule detects.

Claims (2)

1., based on a resonance Raman spectroscopy detection system for small ultraviolet sweeping laser, it comprises small ultraviolet frequency swept laser and master controller and data analysis system, it is characterized in that:
Described small ultraviolet frequency swept laser is made up of impulse semiconductor laser assembly, fiber laser assembly and ultraviolet frequency sweep optical module, wherein:
The impulse semiconductor laser assembly (1) producing the pulse seed laser of pumped optical fibre laser assembly (9) comprises FPGA pulse producer (33), shaping pulse and power amplification circuit (34), semiconductor laser device driving circuit (2), fiber coupler (6), the first Polarization Controller (7) and optoisolator (8); Wherein semiconductor laser device driving circuit (2) is made up of field effect transistor driving chip (3), high-speed high-power field effect transistor (4), laser diode discharge loop (5);
Described fiber laser assembly (9) comprises semiconductor laser (28), photo-coupler (26), ring cavity (29), first negative GVD optical fiber (10), first wave division multiplexer (11), ytterbium doped optical fiber amplifier (12), Second Wave division multiplexer (13), second negative GVD optical fiber (14), second Polarization Controller (15), 3rd Polarization Controller (30), Faraday isolator (31) and the 4th Polarization Controller (32), the pulse seed laser sent for paired pulses semiconductor laser elements (1) carries out power amplification and pulse mode-locked compression,
Described ultraviolet frequency sweep optical module (16) comprises PCF coupling mechanism (17), PCF (18), PCF output interface (19), AOTF (20) and frequency multiplication focus module (21), for first producing super continuous spectrums pulse laser, then frequency sweep frequency multiplication are to ultraviolet section, realize ultraviolet scanning frequency pulse Laser Focusing and export.
Described master controller and data analysis system (27), containing performing the hardware circuit and data analysis software that control, for controlling above-mentioned AOTF (20), semiconductor laser (28), FPGA pulse producer (33) and ultraviolet Raman spectrometer (25), and the output spectrum signal receiving ultraviolet Raman spectrometer (25) carries out spectral data analysis.
2. based on described in claim 1 based on a resonance raman method of testing for the resonance Raman spectroscopy detection system of small ultraviolet sweeping laser, it is characterized in that comprising the following steps:
1) master controller and data analysis system send first steering order for starting AOTF, and select the initial operation wavelength λ of frequency sweep 1;
2) master controller and data analysis system send second steering order for setting the pulsed frequency of FPGA pulse producer and making it startup work;
3) master controller and data analysis system send the 3rd steering order for starting semiconductor laser;
4) frequency that FPGA pulse producer sends is that first the electric pulse of 80MHz carries out shaping pulse through shaping pulse and power amplification circuit, regulate high level dutycycle, the frequency forming nanosecond is the electric pulse of 80MHz, then after carrying out power amplification, send into the control pin of the field effect transistor driving chip in semiconductor laser device driving circuit, it is that the nanosecond pulse signal of 80MHz is for controlling conducting and the cut-off of high-speed high-power field effect transistor that the output pin of field effect transistor driving chip produces frequency, for controlling the discharge and recharge of laser diode discharge loop, making the laser diode in laser diode discharge loop produce repetition is the nanosecond pulse seed laser of 80MHz, this pulse seed laser in fiber coupler coupled into optical fibres, then enters fiber laser assembly through the first Polarization Controller and optoisolator transmission, the issuable echo interference of fiber laser assembly is eliminated in the effect of the first Polarization Controller and optoisolator,
5) semiconductor laser in fiber laser assembly, the continuous pumping laser beam of launching enters ring cavity with both direction after photo-coupler two decile, after first wave division multiplexer and Second Wave division multiplexer, from both direction pumping ytterbium doped optical fiber amplifier; The nanosecond pulse seed laser that impulse semiconductor laser assembly exports carries out power amplification through ytterbium doped optical fiber amplifier, this nanosecond pulse laser is first through the first negative GVD optical fiber simultaneously, pulse obtains compression, because ytterbium doped optical fiber amplifier has positive GVD, so this nanosecond pulse have passed through stretching, again after the second negative GVD optical fiber, pulse obtains second compression again, carries out (chirp) compensation of warbling in ring cavity.3rd Polarization Controller, Faraday isolator and the 4th Polarization Controller form a resonator, utilize nonlinear polarization rotation effect, when two orthogonal polarization components of a pulse are transmitted in a fiber; The polarization state change of the intensity-dependent caused due to Self-phase modulation and Cross phase modulation effect can form equivalent saturable absorber, its physical mechanism and Ke Er optical gate similar, utilize the nonlinear birefringence effect in optical fiber, ultrashort femtosecond laser pulse is produced based on the self-locking mode mechanism in nonlinear birefringence optical fiber, and make laser in ring cavity along one-way transmission, export ultraviolet frequency sweep optical module to by the second Polarization Controller;
6), after the femtosecond laser pulse that fiber laser assembly exports enters PCF by PCF coupling mechanism, super continuous spectrums pulse laser is formed;
7) this super continuous spectrums pulse laser is after AOTF, and obtaining wavelength is λ 1femtosecond pulsed laser; Comprise two frequency-doubling crystals in frequency multiplication focus module and can realize quadruple, and focusing optical structure can realize the focusing of Ultra-Violet Laser; After entering frequency multiplication focus module from the femtosecond pulsed laser of AOTF output, forming wavelength is 1/4th λ 1repetition be the femtosecond pulsed laser of 80MHz, line focus optical texture focuses in the test point of detected object;
8) master controller and data analysis system send the 4th steering order startup ultraviolet Raman spectrometer, the Raman signal that test point excites is assembled through signals collecting optical module and is coupled into ultraviolet Raman spectrometer, received and opto-electronic conversion by ultraviolet light photo sensor after inner beam splitting system light splitting, the electric signal of conversion is sent to master controller and data analysis system carries out uv raman spectroscopy signal analysis; In the test point place material molecule composition of detected object, corresponding resonance Raman excitation wavelength is 1/4th λ 1m 1molecule is due to resonance Raman effect, and the intensity of its feature Stokes Raman spectral line will strengthen 10 4to 10 6doubly, therefore can to the M of denier concentration 1molecule detects;
9) master controller and data analysis system send the operation wavelength λ that steering order selects AOTF 21+ Δ λ, Δ λ are sweeping steps; From PCF export super continuous spectrums pulse laser after AOTF, obtaining wavelength is λ 2femtosecond pulsed laser; After entering frequency multiplication focus module, forming wavelength is 1/4th λ 2repetition be the femtosecond pulsed laser of 80MHz, line focus optical texture focuses in the test point of detected object; The Raman signal that test point excites is assembled through signals collecting optical module and is coupled into ultraviolet Raman spectrometer, received and opto-electronic conversion by ultraviolet light photo sensor after inner beam splitting system light splitting, the electric signal of conversion is sent to master controller and data analysis system carries out uv raman spectroscopy signal analysis; In the test point place material molecule composition of detected object, corresponding resonance Raman excitation wavelength is 1/4th λ 2m 2molecule is due to resonance Raman effect, and the intensity of its feature Stokes Raman spectral line will strengthen 10 4to 10 6doubly, therefore can to the M of denier concentration 2molecule detects;
10) repeat step 9, select the operation wavelength λ of AOTF 31+ 2 Δ λ; In the test point place material molecule composition of detected object, corresponding resonance Raman excitation wavelength is 1/4th λ 3m 3molecule is due to resonance Raman effect, and the intensity of its feature Stokes Raman spectral line will strengthen 10 4to 10 6doubly, therefore can to the M of denier concentration 3molecule detects;
11) constantly step 10 is repeated, until select AOTF frequency sweep cut-off operation wavelength λ Ν1+ (N-1) Δ λ, selects λ in the present embodiment Ν=1200nm; In like manner, in the test point place material molecule composition of detected object, corresponding resonance Raman excitation wavelength is 1/4th λ Ν, i.e. the M of 300nm nmolecule is due to resonance Raman effect, and the intensity of its feature Stokes Raman spectral line will strengthen 10 4to 10 6doubly, therefore can to the M of denier concentration nmolecule detects.
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