CN104842075A - Detection method for laser processing groove - Google Patents
Detection method for laser processing groove Download PDFInfo
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- CN104842075A CN104842075A CN201510082171.8A CN201510082171A CN104842075A CN 104842075 A CN104842075 A CN 104842075A CN 201510082171 A CN201510082171 A CN 201510082171A CN 104842075 A CN104842075 A CN 104842075A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/26—Bombardment with radiation
- H01L21/263—Bombardment with radiation with high-energy radiation
- H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
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- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
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- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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Abstract
The present invention provides a detection method for a laser processing groove, wherein the position shifting influence of a coarse groove on devices can be avoided. The detection method for the laser processing groove comprises the steps of a first groove checking step (ST1) and a second groove checking step (ST3). During the first groove checking step (ST1), a first groove is formed at a segmentation predetermined line by using a first laser light. Meanwhile, the first groove is shot by a shooting part, so that the position of the first groove can be detected. During the second groove checking step (ST3), a second groove is formed at a segmentation predetermined line within the remaining area by using a second laser light. Meanwhile, the second groove is shot by the shooting part, so that the position of the second groove can be detected. According to the detection method for the laser processing groove, the position shifting of the first groove and the position shifting of the second groove can be detected, so that the first groove and the second groove are positioned at specified locations.
Description
Technical field
The present invention relates to the detection method of laser processing groove.
Background technology
In the segmentation that the wafer forming device by Low-k film (film having low dielectric constant) is carried out, known following such processing method: in order to tackle fragility and the fissility of Low-k film, by the ablation realized based on irradiating laser beam, 2 working grooves that Low-k film is split are formed in the both sides of segmentation preset lines, then, utilize cutting tool to splitting between working groove (for example, referring to patent document 1).
Patent document 1: Japanese Unexamined Patent Publication 2005-64231 publication
In the processing method shown in aforesaid patent document 1, in order to prevent the partial wear of carrying out the cutting tool cut along working groove, most cases makes the gap-forming between the outer rim that both sides are formed with the working groove of 2 be the interval of the width exceeding cutting tool.In the processing method shown in aforesaid patent document 1, first, the laser beam of the small light spot utilizing energy density high forms 2 working grooves, then, so that the mode of landfill between working groove is formed thick groove by cutting tool in the both sides of segmentation preset lines., in this processing method, even if also the edge of the thick groove of stria cannot be covered with by Pan Do from top view, therefore, work in-process cannot play the function of the otch inspection (position offset correction) carrying out thick groove, and particularly, the position skew of thick groove may have an impact to device.
Summary of the invention
The present invention completes in view of above-mentioned problem, and its object is to provides a kind of detection method of position skew on the laser processing groove of the impact of device that can suppress thick groove.
In order to solve the problems of the technologies described above and realize object, the detection method of laser processing groove of the present invention is in the processing method of wafer, detect the detection method of the position of the 1st groove and the 2nd groove in order to the 1st groove and the 2nd groove being positioned the position that specifies, in the processing method of described wafer, use laser processing device to wafer illumination the 1st laser beam, at least form the 1st groove in the both sides of segmentation preset lines, then the 2nd groove that the edge part of the 2nd laser beam formation groove is overlapping with the 1st groove is utilized, described wafer possesses: device area, in this device area, utilize the duplexer that is layered in the front of wafer by being formed as being formed with device in region that cancellate segmentation preset lines marks off, with periphery remaining area, this periphery remaining area is around this device area, and described laser processing device comprises: chuck table, and it keeps wafer, laser light irradiation component, it has the laser beam of absorbefacient wavelength for this wafer to the wafer illumination remained on this chuck table, form laser processing groove in the front of wafer, and imaging member, it is made a video recording to the front of wafer, and this laser light irradiation component possesses: laser oscillator, 1/2 wavelength plate, is incident to this 1/2 wavelength plate from this laser oscillator laser beam that vibrates, branch piece, it branches into the 1st laser beam and the 2nd laser beam by by the laser beam after this 1/2 wavelength plate, light beam adjustment component, it adjusts the beam diameter of the 2nd laser beam, and collector lens, it is made the 1st laser beam and is assembled by the 2nd laser beam after this light beam adjustment component, this laser light irradiation component optionally irradiates the 1st laser beam and the 2nd laser beam by this 1/2 wavelength plate, the feature of the detection method of described laser processing groove is, when detecting the position of the 1st groove, the 1st groove is formed at this segmentation preset lines place by the 1st laser beam, before formation the 2nd groove, this imaging member is utilized to make a video recording to the 1st groove, detect the position of the 1st groove, when detecting the position of the 2nd groove, the 2nd groove is formed at the segmentation preset lines place not forming this periphery remaining area of the 1st groove of wafer by the 2nd laser beam, and utilize this imaging member to make a video recording to the 2nd groove, detect the position of the 2nd groove, 1st groove and the 2nd groove are positioned the position specified.
In addition, in the detection method of described laser processing groove, preferably, the described collector lens of described laser processing device is made up of the 1st collector lens making described 1st laser beam assemble and the 2nd collector lens making described 2nd laser beam assemble.
Therefore, in the detection method of the laser processing groove of the present application, by forming the 2nd groove not formed in the periphery remaining area of device of wafer especially, thus the otch inspection of the 2nd groove as thick groove can be carried out.Owing to not forming device in the remaining area of periphery, therefore, even if there occurs the position skew of the 2nd groove, the impact that the position skew of the 2nd groove produces device can also be suppressed as far as possible.In addition, owing to forming the 2nd groove in the remaining area of periphery, therefore without the need to forming the 2nd groove throughout the total length of segmentation preset lines, the total length in order to implement the 2nd groove that otch inspection is formed can be suppressed thus.Therefore, it is possible to the time that the inspection of minimizing otch spends.
Accompanying drawing explanation
Fig. 1 is the stereogram of the structure example of the laser processing device of the detection method that the laser processing groove implementing embodiment is shown.
Fig. 2 is the figure of the image of the imaging member that the laser processing device shown in Fig. 1 is shown.
Fig. 3 is the figure of the structure of the laser light irradiation component that the laser processing device shown in Fig. 1 is shown.
Fig. 4 is the stereogram of the wafer of the processing object illustrated as the laser processing device shown in Fig. 1 etc.
Fig. 5 is the flow chart of the processing method of wafer that the detection method of the laser processing groove comprising embodiment is shown, that employ laser processing device.
Fig. 6 is the figure of the summary of the 1st otch inspection step of the detection method of the laser processing groove that embodiment is shown, (a) of Fig. 6 is the sectional view being formed with the wafer of the state of the 1st groove in the both sides of segmentation preset lines, and (b) of Fig. 6 is the figure that the image that the 1st groove etc. shown in shooting Fig. 6 (a) obtains is shown.
Fig. 7 is the figure of the summary of the 1st groove forming step of the processing method that the wafer shown in Fig. 5 is shown, (a) of Fig. 7 is the sectional view being formed with the wafer of the state of the 1st groove in the both sides of segmentation preset lines, and (b) of Fig. 7 is the figure that the image that the 1st groove etc. shown in shooting Fig. 7 (a) obtains is shown.
Fig. 8 is the figure of the summary of a part for the 2nd otch inspection step of the detection method of the laser processing groove that embodiment is shown, (a) of Fig. 8 is the sectional view being formed with the wafer of the state of the 2nd groove at the segmentation preset lines place of periphery remaining area, and (b) of Fig. 8 is the figure that the image that the 2nd groove etc. shown in shooting Fig. 8 (a) obtains is shown.
Fig. 9 checks at the 2nd otch shown in Fig. 8 the stereogram being formed with the wafer of the 2nd groove in step at periphery remaining area.
Figure 10 illustrates that the 2nd otch shown in Fig. 8 checks the figure of the summary of the remainder of step, (a) of Figure 10 is the sectional view being formed with the wafer of the state of the 2nd groove at the segmentation preset lines place of periphery remaining area, and Figure 10 (b) is the figure that the image that the 2nd groove etc. shown in shooting Figure 10 (a) obtains is shown.
Figure 11 is the sectional view of the summary of the 2nd groove forming step of the processing method that the wafer shown in Fig. 5 is shown, (a) of Figure 11 is the sectional view being formed with the wafer of the state of the 2nd groove at segmentation preset lines place, and (b) of Figure 11 is the figure that the image that the 1st groove etc. shown in shooting Figure 11 (a) obtains is shown.
Figure 12 is the figure of the structure of the laser light irradiation component of the laser processing device of the detection method of the laser processing groove that the variation implementing embodiment is shown.
Label declaration
1: laser processing device;
10: chuck table;
20: laser light irradiation component;
22: laser oscillator;
23:1/2 wavelength plate;
24: beam splitter (branch piece);
25: light beam adjustment component;
26: collector lens;
26-1: the 1 collector lens;
26-2: the 2 collector lens;
30: imaging member;
W: wafer;
M:Low-k film (duplexer);
B: segmentation preset lines;
D: device;
DR: device area;
GR: periphery remaining area;
L: laser beam;
L1: the 1 laser beam;
L2: the 2 laser beam;
R: laser processing groove;
R1: the 1 groove;
R2: the 2 groove.
Detailed description of the invention
Describe in detail for implementing mode of the present invention (embodiment) with reference to accompanying drawing.The present invention does not limit by the content described in following embodiment.In addition, comprise at the component parts of the following stated the component parts and component parts identical in fact that those skilled in the art can easily expect.In addition, can by appropriately combined for the structure of the following stated.In addition, various omission, replacement and change can be carried out to its structure without departing from the spirit and scope of the invention.
(embodiment)
Be described based on the detection method of accompanying drawing to the laser processing groove of embodiments of the present invention.Fig. 1 is the stereogram of the structure example of the laser processing device of the detection method that the laser processing groove implementing embodiment is shown.Fig. 2 is the figure of the image of the imaging member that the laser processing device shown in Fig. 1 is shown.Fig. 3 is the figure of the structure of the laser light irradiation component that the laser processing device shown in Fig. 1 is shown.Fig. 4 is the stereogram of the wafer of the processing object illustrated as the laser processing device shown in Fig. 1 etc.
The detection method (following, to be only denoted as detection method) of the laser processing groove of embodiment is the method (that is, using the method for laser processing device 1) utilizing the laser processing device 1 shown in Fig. 1 to implement.Laser processing device 1, by making chuck table 10 and laser light irradiation component 20 relative movement of the wafer W of maintenance tabular, is implemented ablation to wafer W thus, thus is formed laser processing groove on the waferw.
In embodiments, wafer W is the processing object being lasered device 1 processing, in embodiments, is the discoideus semiconductor wafer using silicon, sapphire, gallium etc. as stock or optical device wafer.As shown in Figure 4, wafer W possesses: device area DR, in this device area DR, utilizes the Low-k film M being layered in front (shown in waiting at Fig. 6, be equivalent to duplexer), by being formed as forming device D in region that cancellate multiple segmentation preset lines B marks off; With periphery remaining area GR, this periphery remaining area GR is around device area DR.Further, the ratio chain-dotted line region in the inner part in Fig. 4 is device area DR, is periphery remaining area GR than chain-dotted line region in the outer part.In the diagram, for convenience of explanation, the border of device area DR and periphery remaining area GR is shown with chain-dotted line.
The film of the polymer films such as the film of Low-k film M inorganic matter class such as stacked SiOF, BSG (SiOB) on the front of wafer W or poly-first imines system, parylene system and organic matter class is formed.In addition, as shown in Figure 6, the surface of the Low-k film M split on preset lines B is formed slightly lower than the surface of the Low-k film M on device D.Paste splicing tape T at the back side of the side contrary with the front being formed with multiple device D of wafer W, by the outer rim of splicing tape T is pasted onto on ring-shaped frame F, by splicing tape T, wafer W is bearing in the opening of ring-shaped frame F thus.
As shown in Figure 1, laser processing device 1 is configured to comprise: chuck table 10, and it keeps the wafer W of tabular; Laser light irradiation component 20, it forms laser processing groove R (shown in Figure 11) in the front of the wafer W being held in chuck table 10; Imaging member 30, it is made a video recording to the front of wafer W; X-axis mobile member 40; Y-axis mobile member 50; With not shown control unit.
Wafer W before processing is placed on holding surface 10a, to via splicing tape T, the wafer W be pasted in the opening of ring-shaped frame F keeps by chuck table 10.Chuck table 10 is disc-shapes that the part forming holding surface 10a is formed by porous ceramic etc., this chuck table 10 is connected with not shown vacuum suction source via not shown vacuum draw path, keeps this wafer W by the suction wafer W be placed on holding surface 10a.And, chuck table 10 carries out processing feeding by X-axis mobile member 40 along X-direction, and rotate around central axis (parallel with Z axis) by rotary driving source (not shown), and, carry out index feed by Y-axis mobile member 50 along Y direction.In addition, be provided with multiple clamping section 11 around chuck table 10, described multiple clamping section 11 is driven the ring-shaped frame F of the surrounding of holding chip W by air actuator.
Laser light irradiation component 20 irradiates laser beam L1, the L2 (as shown in Figure 3) wafer W to absorbefacient wavelength (such as 355nm) to the wafer W kept by chuck table 10, thus forms laser processing groove R in the front of wafer W.That is, laser light irradiation component 20 is by having laser beam L1, L2 of absorbefacient wavelength (such as 355nm) to the front illuminated of wafer W, comes to implement ablation to wafer W.
As shown in Figure 3, laser light irradiation component 20 possesses: the housing 21 supported by the post portion 3 of apparatus main body 2; Laser oscillator 22; 1/2 wavelength plate 23; Beam splitter 24 (being equivalent to branch piece); Light beam adjustment component 25; With collector lens 26 etc.
Laser oscillator 22 vibrates to the front of wafer W and wafer W is had to the laser beam L of absorbefacient wavelength (such as 355nm).1/2 wavelength plate 23 is incided from the laser oscillator 22 laser beam L that vibrates.Laser beam L by 1/2 wavelength plate 23 is branched into the 1st laser beam L1 and the 2nd laser beam L2 by beam splitter 24.In the present embodiment, beam splitter 24 is prism-type, by make the 1st laser beam L1 through and the 2nd laser beam L2 is reflected, thus laser beam L is branched into energy density high the 1st laser beam L1 compared with penlight diameter and the 2nd laser beam L2.The beam diameter of the 2nd laser beam L2 is adjusted to larger than the beam diameter of the 1st laser beam L1 and can forms the beam diameter of the 2nd groove R2 (being equivalent to thick groove, as shown in Fig. 8 etc.) by light beam adjustment component 25.
Collector lens 26 is arranged on the terminal part of housing 21 opposedly with the holding surface 10a of chuck table 10.Collector lens 26 is made the 1st laser beam L1 and is concentrated on the front of the wafer W kept by chuck table 10 by the 2nd laser beam L2 of light beam adjustment component 25.Collector lens 26 is incident to via speculum 27 and prism 28 by the 2nd laser beam L2 of light beam adjustment component 25, and, be incident to collector lens 26 by the 1st laser beam L1 after beam splitter 24 via speculum 29 and prism 28.Further, the structure of prism 28 is formed as roughly the same with the structure of beam splitter 24.Further, 1/2 wavelength plate 23, light beam adjustment component 25, speculum 27,29, prism 28 is arranged in housing 21.
In addition, in laser light irradiation component 20, by making 1/2 wavelength plate 23 around the optical axis rotation etc. of laser beam L, thus any one party in the 1st laser beam L1 and the 2nd laser beam L2 is optionally exposed on the front of the wafer W kept by chuck table 10.
Imaging member 30 is installed on the housing 21 of laser light irradiation component 20, and makes a video recording to the machining area utilizing laser light irradiation component 20 should carry out Laser Processing.Imaging member 30 exports the image G (as shown in Figure 2) photographed to control unit.Be formed in fig. 2 with the datum line S shown in dotted line being taken by imaging member 30 in the image G obtained.It is consistent that datum line S is adjusted to laser beam L1, L2 of exposing to the front of wafer W with laser light irradiation component 20.
Control unit controls the above-mentioned component parts forming laser processing device 1 respectively.Control unit makes laser processing device 1 pair of wafer W carry out ablation action.And, control unit is the not shown microprocessor that such as possesses arithmetic processing apparatus and ROM, the RAM etc. be made up of CPU etc. is main body and forming, and is connected with the display member of the state of display processing action or the control member that uses when operator's typing processing content information etc.
Next, be described with reference to the processing method (comprising detection method) of wafer of accompanying drawing to the laser processing device 1 employing present embodiment.The processing method of wafer is following such processing method: irradiate the 1st laser beam L1, at least forms the 1st groove R1 in the both sides of segmentation preset lines B, then, utilizes the 2nd groove R2 that the edge part of the 2nd laser beam L2 formation groove and the 1st groove R1 repeat.Detection method is that this detection method possesses the 1st otch and checks that step ST1 and the 2nd otch check step ST3 in order to the 1st groove R1 and the 2nd groove R2 being positioned at the position of regulation and the detection method that detects the position of the 1st groove R1 and the 2nd groove R2 in processing method.
Fig. 5 is the detection method that the laser processing groove comprising embodiment is shown, employ the flow chart of the processing method of the wafer of laser processing device, Fig. 6 is the figure of the summary of the 1st otch inspection step of the detection method of the laser processing groove that embodiment is shown, Fig. 7 is the figure of the summary of the 1st groove forming step of the processing method that the wafer shown in Fig. 5 is shown, Fig. 8 is the figure of the summary of a part for the 2nd otch inspection step of the detection method of the laser processing groove that embodiment is shown, Fig. 9 checks at the 2nd otch shown in Fig. 8 the stereogram being formed with the wafer of the 2nd groove in step at periphery remaining area, Figure 10 illustrates that the 2nd otch shown in Fig. 8 checks the figure of the summary of the remainder of step, Figure 11 is the figure of the summary of the 2nd groove forming step of the processing method that the wafer shown in Fig. 5 is shown.
First, in the processing method of wafer, operator is by processing content Data Enter control unit, wafer W is placed on the holding surface 10a of the chuck table 10 be separated with laser light irradiation component 20 by operator, when there is the start instruction of processing action, laser processing device 1 starts processing action.In processing action, wafer W suction remains on the holding surface 10a of chuck table 10 by control unit, and utilizes clamping section 11 gripping ring-like framework F.Control unit makes chuck table 10 move towards the below of laser light irradiation component 20 by X-axis mobile member 40 and Y-axis mobile member 50, the wafer W remained on chuck table 10 is positioned the below of imaging member 30, imaging member 30 is made a video recording.Imaging member 30 exports the information of the image photographed to control unit.And, control unit implements the image procossing such as the pattern match for carrying out being maintained at the segmentation preset lines B of the wafer W on chuck table 10 and the position alignment of laser light irradiation component 20, adjusts the relative position of the wafer W remained on chuck table 10 and laser light irradiation component 20.
Then, control unit is implemented the 1st otch and is checked step ST1.When the 1st otch checks step ST1, namely when the position of detection the 1st groove R1, the end of a segmentation preset lines B in multiple segmentation preset lines B is positioned the below of laser light irradiation component 20 by control unit, then while make chuck table 10 move along X-direction by X-axis mobile member 40, the 1st laser beam L1 is irradiated from laser light irradiation component 20.Further, as shown in (a) of Fig. 6, by irradiating the 1st laser beam L1 from laser light irradiation component 20, in device area DR, the 1st laser beam L1 is utilized to form the 1st groove R1 in the both sides of one article of segmentation preset lines B thus.
Further, when the 1st otch checks step ST1, namely when the position of detection the 1st groove R1, control unit utilized the 1st groove R1 of imaging member 30 to the both sides being formed in one article of segmentation preset lines B to make a video recording before formation the 2nd groove R2.And, as the example of shown in (b) of Fig. 6, in the image G1 that shooting the 1st groove R1 obtains, control unit makes the part of expression the 1st groove R1 become black (by shown in parallel diagonal lines in (b) of Fig. 6), makes other parts become white.Then, control unit detects to datum line S with by the center line P1 (being illustrated by chain-dotted line in (b) of Fig. 6) of the central authorities between two the 1st groove R1 at the skew Z1 of Y direction, detects the position of the 1st groove R1 thus.
Then, control unit enters the 1st groove forming step ST2.In the 1st groove forming step ST2, control unit is in the Y-axis direction to check in step ST1 that at the 1st otch the relative position of amount to laser light irradiation component 20 and chuck table 10 of the skew Z1 detected is revised, overlapping with datum line S with the center line P1 of the central authorities between making by the 1st groove R1.Then, control unit while make chuck table 10 and laser light irradiation component 20 relative movement by X-axis mobile member 40, rotary driving source, Y-axis mobile member 50, as shown in (a) of Fig. 7 in device area DR and the both sides of all segmentation preset lines B formed the 1st groove R1.And, in the 1st groove forming step ST2, in the image G2 that imaging member 30 photographs, owing to revising with the relative position of amount to laser light irradiation component 20 and chuck table 10 of aforesaid skew Z1 in the Y-axis direction, therefore, as shown in (b) of Fig. 7, overlapping with datum line S by the center line P1 of the central authorities between the 1st groove R1.Further, check that in step ST1 and the 1st groove forming step ST2, preferably, segmentation preset lines B place's formation the 1st groove R1 in device area DR, does not form the 1st groove R1 at the segmentation preset lines B place of periphery remaining area GR at the 1st otch.
Then, control unit enters the 2nd otch and checks step ST3.Step ST3 is checked at the 2nd otch, namely when the position of detection the 2nd groove R2, the segmentation preset lines B of the periphery remaining area GR not having the wafer W of formation the 1st groove R1 is positioned the below of laser light irradiation component 20 by control unit, then while make chuck table 10 move along X-direction by X-axis mobile member 40, the 2nd laser beam L2 is irradiated from laser light irradiation component 20.Further, if (a) of Fig. 8 is with shown in Fig. 9, utilize the 2nd laser beam L2 at segmentation preset lines B place's formation the 2nd groove R2 (being represented by label R2-1 in fig .9) of the periphery remaining area GR of wafer W.
Further, check step ST3 at the 2nd otch, namely when the position of detection the 2nd groove R2, control unit utilizes the 2nd groove R2-1 of imaging member 30 to the segmentation preset lines B place being formed in periphery remaining area GR to make a video recording.And, as the example of shown in (b) of Fig. 8, in the image G3 that shooting the 2nd groove R2 obtains, control unit makes the part of expression the 2nd groove R2 be black (by shown in parallel diagonal lines in (b) of Fig. 8), makes other parts for white.Then, the center line P2 (in (b) of Fig. 8 by chain-dotted line illustrated) of control unit to datum line S and the central authorities by the 2nd groove R2 detects at the skew Z2 of Y direction, detects the position of the 2nd groove R2 thus.
Then, check in step ST3 at the 2nd otch, control unit is revised with the relative position of amount to laser light irradiation component 20 and chuck table 10 of aforesaid skew Z2 in the Y-axis direction, to make the center line P2 of the central authorities by the 2nd groove R2 overlapping with datum line S, afterwards, if (a) of Figure 10 is with shown in Fig. 9, utilize the 2nd laser beam L2 at segmentation preset lines B place's formation the 2nd groove R2 (being represented by symbol R2-2 in fig .9) of the periphery remaining area GR of wafer W.Then, control unit enters the 2nd groove forming step ST4 after confirming following situation: in the image G4 (as Suo Shi Figure 10 (b)) taking the 2nd groove R2-2 utilizing imaging member 30 and obtain, datum line S overlapping with the center line P2 of the central authorities by the 2nd groove R2 (offseting Z2 is below permissible value).Like this, check in step ST3 at the 2nd otch, preferably, the 2nd groove R2 is formed at periphery remaining area GR, and revise with the relative position of amount to laser light irradiation component 20 and chuck table 10 offseting Z2 in the Y-axis direction, till datum line S is overlapping with the center line P2 of the central authorities by the 2nd groove R2 (until offseting till Z2 becomes below permissible value).
In the 2nd groove forming step ST4, control unit is while make chuck table 10 and laser light irradiation component 20 relative movement by X-axis mobile member 40, rotary driving source, Y-axis mobile member 50, while the 2nd groove R2 repeated in device area DR and at edge part and the 1st groove R1 of all segmentation preset lines B places formation groove as shown in 11 (a), thus form laser processing groove R.And, in the 2nd groove forming step ST4, in the image G5 that imaging member 30 photographs (as shown in (b) of Figure 11), owing to revising with the relative position of amount to laser light irradiation component 20 and chuck table 10 of aforesaid skew Z2 in the Y-axis direction, therefore, overlapping with datum line S by the center line P of the central authorities of laser processing groove R.Further, in the 2nd groove forming step ST4, preferably, segmentation preset lines B place's formation the 2nd groove R2 in device area DR, does not form the 2nd groove R2 at the segmentation preset lines B place of periphery remaining area GR.
Like this, the 1st groove R1 and the 2nd groove R2 by detecting skew Z1, Z2 and revising with the relative position of the amount offseting Z1, Z2 to laser light irradiation component 20 and chuck table 10, thus is positioned the position of regulation by control unit.
After all segmentation preset lines B places form laser processing groove R, control unit makes chuck table 10 move to the position be separated with laser light irradiation component 20, then, removes the suction maintenance of chuck table 10 and seizing on both sides by the arms of clamping section 11.Then, the wafer W being formed with laser processing groove R at all segmentation preset lines B places is removed from chuck table 10 by operator, and again the wafer W before Laser Processing is placed on chuck table 10, repeats described operation, form laser processing groove R on the waferw.For the wafer W being formed with laser processing groove R at all segmentation preset lines B places, implement the machining etc. based on cutting tool at laser processing groove R place, thus wafer W is divided into device D one by one.
As described above, according to the detection method of embodiment, at segmentation preset lines B place's formation the 2nd groove R2 of periphery remaining area GR, implement the 2nd otch and check step ST3.Like this, in the periphery remaining area GR not forming device D, form the 2nd groove R2 to the 2nd groove R2 thicker than the 1st groove R1 is positioned at the position of regulation, therefore, it is possible to suppress the skew Z2 i.e. impact of position skew on device D of the 2nd groove R2 as far as possible.
In addition, according to the detection method of embodiment, owing to forming the 2nd groove R2 in the periphery remaining area GR not forming device D, therefore, the 2nd groove R2 is formed without the need to the position in order to the 2nd groove R2 being positioned at regulation throughout the total length of segmentation preset lines B.Therefore, it is possible to suppress the impact on device D further, and, can suppress for the 2nd time of otch inspection required for step ST3.
[variation]
The detection method of the laser processing groove related to based on the variation of accompanying drawing to embodiments of the present invention is described.Figure 12 is the figure of the structure of the laser light irradiation component of the laser processing device of the detection method that the laser processing groove that the variation implementing embodiment relates to is shown.Further, in fig. 12, the identical label of the portion markings identical with embodiment is omitted the description.
As shown in figure 12, in the laser light irradiation component 20 of laser processing device 1 implementing the detection method that the variation of embodiment relates to, collector lens 26 is made up of the 1st collector lens 26-1 of mutual split and the 2nd collector lens 26-2.1st collector lens 26-1 and the 2nd collector lens 26-2 is arranged on the terminal part of housing 21 opposedly with the holding surface 10a of chuck table 10.1st collector lens 26-1 makes the 1st laser beam L1 be concentrated on the front of wafer W, is incident to the 1st collector lens 26-1 by the 1st laser beam L1 after beam splitter 24 via speculum 29.2nd collector lens 26-2 makes the 2nd laser beam L2 be concentrated on the front of wafer W, is incident to the 2nd collector lens 26-2 by the 2nd laser beam L2 after light beam adjustment component 25.
According to the detection method of the variation of embodiment, identically with embodiment, the impact of position skew on device D of the 2nd groove R2 can be suppressed as far as possible.In addition, according to the detection method of the variation of embodiment, due to by making the 1st collector lens 26-1 of the 1st laser beam L1 optically focused and make the 2nd collector lens 26-2 of the 2nd laser beam L2 optically focused form, therefore, laser beam L1, L2 can be suppressed respectively on the impact of collector lens 26-1,26-2, thus can suppress to offset Z1, Z2, and, the 1st and the 2nd otch can be suppressed to check the frequency of step ST1, ST2.
Further, in aforesaid embodiment, before formation the 1st groove R1, implement the 1st otch check step ST1, and before formation the 2nd groove R2, implement the 2nd otch inspection step ST3., in the present invention, also can implement the 1st otch in the arbitrary moment and check that step ST1 and the 2nd otch check step ST3.Such as, also can implement the 2nd otch to the wafer W of not processing completely and check step ST3, also can in advance periphery remaining area GR be stayed and not process, and implement the 2nd otch inspection step ST3 in the arbitrary moment.In addition, in the present invention, also can form the 1st groove R1 in the both sides of the segmentation preset lines B of periphery remaining area GR, implement the 1st otch and check step ST1.In addition, about periphery remaining area GR, also can be: be not do not form the 1st groove R1 and the 2nd groove R2 on the whole periphery (360 degree) of wafer W, but only in a part (such as 180 degree) for the periphery of wafer W, do not form the 1st groove R1 and the 2nd groove R2, in advance the part not forming groove R1, R2 in order to otch inspection is stayed.
Further, the present invention is not limited to above-mentioned embodiment and variation.That is, various distortion can be carried out implement without departing from the spirit and scope of the invention.
Claims (2)
1. a detection method for laser processing groove, it is the detection method detecting the position of the 1st groove and the 2nd groove in the processing method of wafer in order to the 1st groove and the 2nd groove being positioned the position that specifies,
In the processing method of described wafer, use laser processing device to wafer illumination the 1st laser beam, at least form the 1st groove in the both sides of segmentation preset lines, then utilize the 2nd groove that the edge part of the 2nd laser beam formation groove is overlapping with the 1st groove,
Described wafer possesses: device area, in this device area, utilizes the duplexer that is layered in the front of wafer by being formed as being formed with device in region that cancellate segmentation preset lines marks off; With periphery remaining area, this periphery remaining area around this device area,
Described laser processing device comprises: chuck table, and it keeps wafer; Laser light irradiation component, it has the laser beam of absorbefacient wavelength for this wafer to the wafer illumination remained on this chuck table, form laser processing groove in the front of wafer; And imaging member, it is made a video recording to the front of wafer,
This laser light irradiation component possesses: laser oscillator; 1/2 wavelength plate, is incident to this 1/2 wavelength plate from this laser oscillator laser beam that vibrates; Branch piece, it branches into the 1st laser beam and the 2nd laser beam by by the laser beam after this 1/2 wavelength plate; Light beam adjustment component, it adjusts the beam diameter of the 2nd laser beam; And collector lens, it is made the 1st laser beam and is assembled by the 2nd laser beam after this light beam adjustment component, and this laser light irradiation component optionally irradiates the 1st laser beam and the 2nd laser beam by this 1/2 wavelength plate,
The feature of the detection method of described laser processing groove is,
When detecting the position of the 1st groove, forming the 1st groove by the 1st laser beam at this segmentation preset lines place, before formation the 2nd groove, utilizing this imaging member to make a video recording to the 1st groove, detecting the position of the 1st groove,
When detecting the position of the 2nd groove, the 2nd groove is formed at the segmentation preset lines place not forming this periphery remaining area of the 1st groove of wafer by the 2nd laser beam, and utilize this imaging member to make a video recording to the 2nd groove, detect the position of the 2nd groove, the 1st groove and the 2nd groove are positioned the position specified.
2. the detection method of laser processing groove according to claim 1, is characterized in that,
The described collector lens of described laser processing device is by the 1st collector lens making described 1st laser beam assemble and the 2nd collector lens of described 2nd laser beam convergence is formed.
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| JP2014-028891 | 2014-02-18 | ||
| JP2014028891A JP6210902B2 (en) | 2014-02-18 | 2014-02-18 | Laser processing groove detection method |
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| KR (1) | KR102148917B1 (en) |
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| CN114882032A (en) * | 2022-07-11 | 2022-08-09 | 苏州镭明激光科技有限公司 | Grooving detection and intelligent sensing processing method and system for semiconductor |
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| JP2017177194A (en) * | 2016-03-31 | 2017-10-05 | 株式会社東京精密 | Laser processing device and laser processing method |
| JP6788182B2 (en) * | 2016-08-22 | 2020-11-25 | 株式会社東京精密 | Laser processing equipment and laser processing method |
| JP2020098831A (en) * | 2018-12-17 | 2020-06-25 | 株式会社ディスコ | Division method for workpiece |
| JP7356630B2 (en) | 2019-12-11 | 2023-10-05 | 株式会社東京精密 | Laser processing equipment and control method for laser processing equipment |
| JP7153851B2 (en) * | 2020-10-27 | 2022-10-17 | 株式会社東京精密 | LASER PROCESSING APPARATUS AND LASER PROCESSING METHOD |
| JP2022071402A (en) * | 2020-10-28 | 2022-05-16 | 株式会社東京精密 | Laser processing device and laser processing method |
| JP2023146872A (en) * | 2022-03-29 | 2023-10-12 | 株式会社東京精密 | Laser beam correction method |
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| KR102148917B1 (en) | 2020-08-28 |
| TWI623369B (en) | 2018-05-11 |
| CN104842075B (en) | 2018-04-06 |
| KR20150097394A (en) | 2015-08-26 |
| JP2015154009A (en) | 2015-08-24 |
| TW201536464A (en) | 2015-10-01 |
| JP6210902B2 (en) | 2017-10-11 |
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