CN104836537B - The alternative and circuit of filter capacitor in a kind of light-receiving secondary module - Google Patents
The alternative and circuit of filter capacitor in a kind of light-receiving secondary module Download PDFInfo
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- CN104836537B CN104836537B CN201510263256.6A CN201510263256A CN104836537B CN 104836537 B CN104836537 B CN 104836537B CN 201510263256 A CN201510263256 A CN 201510263256A CN 104836537 B CN104836537 B CN 104836537B
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Abstract
The invention discloses the alternative and circuit of filter capacitor in a kind of light-receiving secondary module, the filter capacitor technical field being related in light-receiving secondary module.This method includes：DC-isolation is carried out to the output signal of PIN-type photoelectric diode, and 180 ° of phse conversions are carried out to the signal after isolation, forms AC signal；The AC signal amplify with phase unit, stabilization is carried out using bias voltage and bias current in amplification process；DC-isolation is carried out to the signal after amplification, and 180 ° of phse conversions are carried out to the signal after isolation, forms the output of negative-feedback AC signal.The present invention can realize the replacement of external filter capacitor so that ROSA encapsulation is simpler, improves production efficiency, reduces production cost.
Description
Technical field
The present invention relates to the filter capacitor technical field in light-receiving secondary module, is specifically a kind of light-receiving secondary module
The alternative and circuit of middle filter capacitor.
Background technology
In optical communication field, existing ROSA (Receiver Optical Subassembly, light-receiving secondary module)
Generally comprise PIN (type of photodiode) type photodiodes and trans-impedance amplifier TIA, its typical case signal electricity
Road is shown in Figure 1.It will be seen from figure 1 that in existing ROSA, in order that the performance of internal trans-impedance amplifier reaches application
It is required that (realizing that the supply voltage of PIN-type photodiode is stable), external one at the PINK ends of PIN-type photodiode
Filter capacitor C1 over the ground, its capacitance are 470pF.
Because existing ROSA needs external filter capacitor C1, so that ROSA packaging process is complicated, reduce
ROSA productivity ratio；And 470pF filter capacitor C1 is expensive, adds ROSA production cost.
Therefore, how on the premise of trans-impedance amplifier performance is ensured, avoid using external 470pF filter capacitor C1,
It is urgent problem to be solved in ROSA technologies.
The content of the invention
The invention aims to overcome the shortcomings of above-mentioned background technology, there is provided filtered electrical in a kind of light-receiving secondary module
The alternative and circuit of appearance, the replacement of external filter capacitor can be realized so that ROSA encapsulation is simpler, improves production effect
Rate, reduce production cost.
To achieve the above objectives, the alternative of the invention that filter capacitor in a kind of light-receiving secondary module is provided, including with
Lower step：
S1, the output signal to PIN-type photoelectric diode carry out DC-isolation, and carry out 180 ° of phases to the signal after isolation
Bit map, form AC signal；
S2, the AC signal with phase unit amplify, bias voltage and bias current are utilized in amplification process
Carry out stabilization；
S3, DC-isolation is carried out to the signal after amplification, and 180 ° of phse conversions are carried out to the signal after isolation, formed negative
Feedback communication signal output.
On the basis of above-mentioned technical proposal, step S1 specifically includes following steps：By capacitance to PIN-type photoelectricity
The output signal of diode carries out DC-isolation and 180 ° of phse conversions, forms AC signal.
On the basis of above-mentioned technical proposal, bias voltage described in step S2 is obtained by carrying out partial pressure to power supply, described
Bias current is obtained by carrying out mirror image to reference current IREF.
On the basis of above-mentioned technical proposal, step S3 specifically includes following steps：By capacitance to amplification after
Signal carries out DC-isolation and 180 ° of phse conversions, forms the output of negative-feedback AC signal.
The present invention also provides a kind of replacement circuit of filter capacitor in light-receiving secondary module for realizing the above method, including defeated
Enter DC isolation circuit, with phase unit amplifying circuit, quiescent bias circuit and output DC isolation circuit；
The input of input direct-current isolation circuit is connected with the PINA signal output parts of PIN-type photodiode, and input is straight
The output end of stream isolation circuit is connected with the input of same phase unit amplifying circuit；With phase unit amplifying circuit output end with it is defeated
Go out the input connection of DC isolation circuit, export the output end of DC isolation circuit and the PINK ends of PIN-type photodiode
Connection；The output end of quiescent bias circuit is connected with the input of same phase unit amplifying circuit；
The input direct-current isolation circuit is used for：DC-isolation is carried out to the output signal of PIN-type photodiode, and it is right
Signal after isolation carries out 180 ° of phse conversions, forms AC signal；
The same phase unit amplifying circuit is used for：AC signal amplify with phase unit；
The quiescent bias circuit is used for：By providing bias voltage and bias current in amplification process, to mutually single
Position amplifying circuit carries out stabilization, it is operated in stable state；
The output DC isolation circuit is used for：DC-isolation is carried out to the output signal of same phase unit amplifying circuit, and
180 ° of phse conversions are carried out to the signal after isolation.
On the basis of above-mentioned technical proposal, the input direct-current isolation circuit includes the first capacitance, and described first
One end of capacitance is connected with the PINA signal output parts of PIN-type photodiode, the other end and same phase unit amplifying circuit
Input connection.
On the basis of above-mentioned technical proposal, the same phase unit amplifying circuit include the first NMOS tube, the second NMOS tube,
3rd NMOS tube, the 4th NMOS tube；
The output end with input direct-current isolation circuit, the output end of quiescent bias circuit connect the grid of first NMOS tube respectively
Connect, the drain electrode of the first NMOS tube is connected with power supply, the source electrode of the first NMOS tube grid with the second NMOS tube, the 3rd NMOS respectively
The drain electrode connection of pipe；The drain electrode of second NMOS tube is connected with power supply, and the drain electrode of the source electrode of the second NMOS tube and the 4th NMOS tube connects
Connect；The grid with the 4th NMOS tube, the output end of quiescent bias circuit are connected the grid of 3rd NMOS tube respectively, the 3rd NMOS tube
Source ground；The source ground of 4th NMOS tube.
On the basis of above-mentioned technical proposal, the exchange multiplication factor Av of the same phase unit amplifying circuit is：
In formula, gm_201For the mutual conductance of the first NMOS tube, r201For the output resistance of the first NMOS tube, gm_202For the 2nd NMOS
The mutual conductance of pipe, r202For the output resistance of the second NMOS tube.
On the basis of above-mentioned technical proposal, the quiescent bias circuit includes power supply bleeder circuit and current mirror electricity
Road；The power supply bleeder circuit includes first resistor, 3rd resistor, the second electric capacity and the 4th electric capacity, first resistor and the second electricity
After holding parallel connection, one end of first resistor is connected with power supply, and the one end of the other end respectively with 3rd resistor, the 4th electric capacity is connected, the
Three resistance, the other end of the 4th electric capacity are grounded；The current mirror circuit includes the 5th NMOS tube, the 5th NMOS tube
Grid is connected with same phase unit amplifying circuit, and the drain electrode of the 5th NMOS tube is connected with reference current IREF, the source of the 5th NMOS tube
Pole is grounded.
On the basis of above-mentioned technical proposal, the output DC isolation circuit includes the second capacitance, and described second
One end of capacitance is connected with the output end of same phase unit amplifying circuit, the PINK ends of the other end and PIN-type photodiode
Connection.
The beneficial effects of the present invention are：The present invention reaches application by the performance of negative feedback mechanism trans-impedance amplifier
It is required that (realizing that the supply voltage of PIN-type photodiode is stable), instead of external filter capacitor so that ROSA envelope completely
Dress process is simpler, production efficiency is high；In addition, the circuit of the present invention is integrated in trans-impedance amplifier, it is not only simple in construction small
Ingeniously, beneficial to industrialized production, and the used capacitance for being internally integrated capacitance is fF levels, lower than external filter capacitor 3
The individual order of magnitude, for the filter capacitor for being 470pF compared to capacitance, price is cheaper, and production cost is low, is adapted to batch raw
Production.
Brief description of the drawings
Fig. 1 is the schematic diagram of existing light-receiving secondary module in background technology；
Fig. 2 is the schematic diagram for light-receiving this module applied in the embodiment of the present invention；
Fig. 3 is the schematic diagram of replacement circuit in the embodiment of the present invention；
Fig. 4 is the circuit theory diagrams of replacement circuit in the embodiment of the present invention；
Fig. 5 is the open loop transactional analysis figure of replacement circuit in the embodiment of the present invention；
Fig. 6 is the output snapshots in time using PINK ends after external filter capacitor；
Fig. 7 is the output snapshots in time using PINK ends after replacement circuit of the present invention.
Reference：
10- input direct-current isolation circuits, the capacitances of 101- first；
20- is the same as phase unit amplifying circuit, the NMOS tubes of 201- first, the NMOS tubes of 202- second, the NMOS tubes of 203- the 3rd, 204-
4th NMOS tube；
30- quiescent bias circuits, 301- first resistors, the electric capacity of 302- second, 303- 3rd resistors, the electric capacity of 304- the 4th,
The NMOS tubes of 305- the 5th；
40- exports DC isolation circuit, the capacitances of 401- second.
Embodiment
Below in conjunction with the accompanying drawings and specific embodiment the present invention is described in further detail.
The embodiment of the present invention provides a kind of alternative of filter capacitor in light-receiving secondary module, applied to PIN-type
The light-receiving secondary module of photodiode, it is therefore an objective to avoid using external 470pF filter capacitors so that light-receiving secondary module is only
Including PIN-type photodiode and trans-impedance amplifier (shown in Figure 2), packaging process can be simplified, improve productivity ratio, reduce life
Produce cost.The alternative comprises the following steps：
S1, the output signal PINA to PIN-type photoelectric diode carry out DC-isolation, and the signal after isolation is carried out
180 ° of phse conversions, form AC signal；Wherein, in step S1, believed by output of the capacitance to PIN-type photoelectric diode
Number PINA carries out DC-isolation and 180 ° of phse conversions.
S2, the AC signal currently formed with phase unit amplify, using bias voltage and partially in amplification process
Put electric current and carry out stabilization；
In step S2, bias voltage is obtained by carrying out partial pressure to power supply；Obtained by carrying out mirror image to reference current IREF
To bias current；Wherein, the power supply can be power supply or built-in power source special.
In step S2, it is with the major function of phase unit amplification to the AC signal progress currently formed：Change with mutually single
DC impedance between two nodes of input and output of position amplification, makes it infinitely great, so as to be effectively isolated direct current signal；While by
It is less than or equal to 1 in gain, so positive feedback will not be formed to filtering loop so that the PINK ends of PIN-type photodiode
PINK signals will not vibrate.
S3, DC-isolation is carried out to the signal after amplification, and 180 ° of phse conversions are carried out to the signal after isolation, formed negative
Feedback communication signal output；Wherein, in step S3, DC-isolation and 180 ° of phases are carried out to the signal after amplification by capacitance
Bit map.
Shown in Figure 3, the embodiment of the present invention also provides filtered electrical in a kind of light-receiving secondary module for realizing the above method
The replacement circuit of appearance, the replacement circuit are integrated in inside trans-impedance amplifier, including input direct-current isolation circuit 10, are put with phase unit
Big circuit 20, quiescent bias circuit 30 and output DC isolation circuit 40；The input and PIN-type of input direct-current isolation circuit 10
The PINA signal output parts connection of photodiode, the output end of input direct-current isolation circuit 10 and same phase unit amplifying circuit 20
Input connection；Output end with phase unit amplifying circuit 20 is connected with exporting the input of DC isolation circuit 40, is exported
The output end of DC isolation circuit 40 is connected with the PINK ends of PIN-type photodiode, the output end of quiescent bias circuit 30 with
Input with phase unit amplifying circuit 20 connects.
It is shown in Figure 4, input direct-current isolation circuit 10, for carrying out direct current to the output signal PINA of photoelectric diode
Isolation, and 180 ° of phse conversions are carried out to the signal after isolation.The input direct-current isolation circuit 10 includes the first capacitance
101, one end of first capacitance 101 is connected with the PINA signal output parts of PIN-type photodiode, the other end and same phase
The input connection of unit amplifying circuit 20.
It is shown in Figure 4, with phase unit amplifying circuit 20, for AC signal with phase unit amplify.The same phase
Unit amplifying circuit 20 includes the first NMOS (N-Mental-Oxide-Semiconductor, N-type metal-oxide-partly lead
Body) pipe 201, the second NMOS tube 202, the 3rd NMOS tube 203, the 4th NMOS tube 204；The grid of first NMOS tube 201 respectively with
The output end of input direct-current isolation circuit 10, the connection of the output end of the power supply bleeder circuit of quiescent bias circuit 30, the first NMOS
The drain electrode of pipe 201 is connected with power supply, the source electrode of the first NMOS tube 201 grid with the second NMOS tube 202, the 3rd NMOS tube respectively
203 drain electrode connection；The drain electrode of second NMOS tube 202 is connected with power supply, the source electrode and the 4th NMOS tube of the second NMOS tube 202
204 drain electrode connection；The electricity of the grid of 3rd NMOS tube 203 grid with the 4th NMOS tube 204, quiescent bias circuit 30 respectively
The output end of traffic mirroring circuit is connected, the source ground of the 3rd NMOS tube 203；The source ground of 4th NMOS tube 204.
In the present embodiment, the exchange multiplication factor Av with phase unit amplifying circuit 20 is：
In formula, gm_201For the mutual conductance of the first NMOS tube 201, gmb_201For the bulk effect mutual conductance of the first NMOS tube 201, r201For
The output resistance of first NMOS tube 201, r203For the output resistance of the 3rd NMOS tube 203, gm_202For the second NMOS tube 202 across
Lead, gmb_202For the bulk effect mutual conductance of the second NMOS tube 202, r202For the output resistance of the second NMOS tube 202, r204For the 4th
The output resistance of NMOS tube 204.Because the second NMOS tube 202, the 4th NMOS tube 204 are active load, its output resistance is larger,
And first the bulk effect mutual conductance of NMOS tube 201, the 3rd NMOS tube 203 be much smaller than the mutual conductance of itself, so exchange multiplication factor
It can be reduced to：
From simplified style, this is up to 1 with the multiplication factor of phase unit amplifying circuit 20, and its phase invariant can be effective
Meet：Change DC impedance, make it infinitely great；Gain simultaneously is less than or equal to 1 so that the PINK ends of PIN-type photodiode
The requirement that PINK signals will not vibrate.
It is shown in Figure 4, quiescent bias circuit 30, in amplification process by providing bias voltage and biased electrical
Stream, stabilization is carried out to same phase unit amplifying circuit 20, it is operated in stable state.The quiescent bias circuit 30 includes power supply point
Volt circuit and current mirror circuit.Wherein, power supply bleeder circuit is used to be to provide bias voltage, bag with phase unit amplifying circuit 20
First resistor 301,3rd resistor 303, the second electric capacity 302 and the 4th electric capacity 304 are included, the electric capacity 302 of first resistor 301 and second is simultaneously
After connection, one end of first resistor 301 is connected with power supply, and the other end connects with one end of 3rd resistor 303, the 4th electric capacity 304 respectively
Connect, 3rd resistor 303, the other end of the 4th electric capacity 304 are grounded；Current mirror circuit is used to be with phase unit amplifying circuit 20
Bias current is provided, including the 5th NMOS tube 305, the grid of the 5th NMOS tube 305 are connected with same phase unit amplifying circuit 20,
Drain electrode is connected with reference current IREF, source ground.
It is shown in Figure 4, DC isolation circuit 40 is exported, for the output signal progress to same phase unit amplifying circuit 20
DC-isolation, and 180 ° of phse conversions are carried out to the signal after isolation, negative-feedback AC signal feedback is formed to PIN-type photoelectricity two
The PINK ends of pole pipe.The output DC isolation circuit 40 includes the second capacitance 401, one end of second capacitance 401
It is connected with the output end of same phase unit amplifying circuit 20, the other end is connected with the PINK ends of PIN-type photodiode.
It is shown in Figure 5, to the replacement circuit of the present invention by knowable to open loop AC-circuit analysis, this circuit realiration ring
The exchange negative-feedback on road, even negative-feedback occurs in the polarity of the PINK AC signals of PIN-type photodiode.Again referring to Fig. 6
It is shown, existing light-receiving secondary module using after external 470pF filter capacitors, the PINK ends of PIN-type photodiode it is defeated
Go out signal when peak photoelectric current in peak is 100nA, the mains fluctuations amplitude of PIN-type photodiode is 70uV.And use this
After invention (shown in Figure 7), in the case of no external 470pF filter capacitors, the PINK ends of PIN-type photodiode
For output signal when peak photoelectric current in peak is 100nA, the mains fluctuations amplitude of PIN-type photodiode is 100uV.
As can be seen here, the present invention reaches application requirement by the performance of negative feedback mechanism trans-impedance amplifier and (realized
The supply voltage of PIN-type photodiode is stable), it can substitute external filter capacitor completely.
The present invention is not limited to the above-described embodiments, for those skilled in the art, is not departing from
On the premise of the principle of the invention, some improvements and modifications can also be made, these improvements and modifications are also considered as the protection of the present invention
Within the scope of.The content not being described in detail in this specification belongs to prior art known to professional and technical personnel in the field.
Claims (10)
- A kind of 1. alternative of filter capacitor in light-receiving secondary module, applied to the light-receiving with PIN-type photodiode Secondary module, it is characterised in that comprise the following steps：S1, carry out DC-isolation to the output signal of PIN-type photoelectric diode by input direct-current isolation circuit (10), and to every Signal from after carries out 180 ° of phse conversions, forms AC signal；S2, by same phase unit amplifying circuit (20) AC signal with phase unit amplify, it is sharp in amplification process Stabilization is carried out with bias voltage and bias current；S3, by exporting DC isolation circuit (40) DC-isolation is carried out to the signal after amplification, and the signal after isolation entered 180 ° of phse conversions of row, form the output of negative-feedback AC signal；Export the output end and PIN-type photoelectricity of DC isolation circuit (40) The PINK ends connection of diode.
- 2. the alternative of filter capacitor in light-receiving secondary module as claimed in claim 1, it is characterised in that step S1 is specific Comprise the following steps：DC-isolation is carried out to the output signal of PIN-type photoelectric diode by capacitance and 180 ° of phases become Change, form AC signal.
- 3. the alternative of filter capacitor in light-receiving secondary module as claimed in claim 1, it is characterised in that：Described in step S2 Bias voltage is obtained by carrying out partial pressure to power supply, and the bias current is obtained by carrying out mirror image to reference current IREF.
- 4. the alternative of filter capacitor in light-receiving secondary module as claimed in claim 1, it is characterised in that step S3 is specific Comprise the following steps：DC-isolation and 180 ° of phse conversions are carried out to the signal after amplification by capacitance, form negative-feedback AC signal exports.
- 5. the replacement circuit of filter capacitor in a kind of light-receiving secondary module for realizing method any one of Claims 1-4, It is characterized in that：Including input direct-current isolation circuit (10), with phase unit amplifying circuit (20), quiescent bias circuit (30) and defeated Go out DC isolation circuit (40)；The input of input direct-current isolation circuit (10) is connected with the PINA signal output parts of PIN-type photodiode, and input is straight The output end of stream isolation circuit (10) is connected with the input of same phase unit amplifying circuit (20)；With phase unit amplifying circuit (20) Output end with output DC isolation circuit (40) input be connected, export DC isolation circuit (40) output end and PIN The PINK ends connection of type photodiode；The output end of quiescent bias circuit (30) and the input of same phase unit amplifying circuit (20) End connection；The input direct-current isolation circuit (10) is used for：DC-isolation is carried out to the output signal of PIN-type photodiode, and it is right Signal after isolation carries out 180 ° of phse conversions, forms AC signal；The same phase unit amplifying circuit (20) is used for：AC signal amplify with phase unit；The quiescent bias circuit (30) is used for：By providing bias voltage and bias current in amplification process, to mutually single Position amplifying circuit (20) carries out stabilization, it is operated in stable state；The output DC isolation circuit (40) is used for：The output signal of same phase unit amplifying circuit (20) is carried out direct current every From, and 180 ° of phse conversions are carried out to the signal after isolation.
- 6. the replacement circuit of filter capacitor in light-receiving secondary module as claimed in claim 5, it is characterised in that：The input is straight Stream isolation circuit (10) includes the first capacitance (101), one end and the PIN-type photoelectricity two of first capacitance (101) The PINA signal output parts connection of pole pipe, the other end are connected with the input of same phase unit amplifying circuit (20).
- 7. the replacement circuit of filter capacitor in light-receiving secondary module as claimed in claim 5, it is characterised in that：It is described single with phase Position amplifying circuit (20) includes the first NMOS tube (201), the second NMOS tube (202), the 3rd NMOS tube (203), the 4th NMOS tube (204)；The grid of first NMOS tube (201) output end with input direct-current isolation circuit (10), quiescent bias circuit (30) respectively Output end connection, the drain electrode of the first NMOS tube (201) is connected with power supply, and the source electrode of the first NMOS tube (201) is respectively with second The drain electrode connection of the grid of NMOS tube (202), the 3rd NMOS tube (203)；The drain electrode of second NMOS tube (202) is connected with power supply, the source electrode of the second NMOS tube (202) and the 4th NMOS tube (204) Drain electrode connection；The grid of 3rd NMOS tube (203) grid with the 4th NMOS tube (204), quiescent bias circuit (30) respectively Output end is connected, the source ground of the 3rd NMOS tube (203)；The source ground of 4th NMOS tube (204).
- 8. the replacement circuit of filter capacitor in light-receiving secondary module as claimed in claim 7, it is characterised in that：It is described single with phase Position amplifying circuit (20) exchange multiplication factor Av be：<mrow> <msub> <mi>A</mi> <mi>v</mi> </msub> <mo>=</mo> <mfrac> <mrow> <msub> <mi>g</mi> <mrow> <mi>m</mi> <mo>_</mo> <mn>201</mn> </mrow> </msub> <msub> <mi>r</mi> <mn>201</mn> </msub> </mrow> <mrow> <msub> <mi>g</mi> <mrow> <mi>m</mi> <mo>_</mo> <mn>201</mn> </mrow> </msub> <msub> <mi>r</mi> <mn>201</mn> </msub> <mo>+</mo> <mn>1</mn> </mrow> </mfrac> <mo>&CenterDot;</mo> <mfrac> <mrow> <msub> <mi>g</mi> <mrow> <mi>m</mi> <mo>_</mo> <mn>202</mn> </mrow> </msub> <msub> <mi>r</mi> <mn>202</mn> </msub> </mrow> <mrow> <msub> <mi>g</mi> <mrow> <mi>m</mi> <mo>_</mo> <mn>202</mn> </mrow> </msub> <msub> <mi>r</mi> <mn>202</mn> </msub> <mo>+</mo> <mn>1</mn> </mrow> </mfrac> </mrow>In formula, gm_201For the mutual conductance of the first NMOS tube (201), r201For the output resistance of the first NMOS tube (201), gm_202For The mutual conductance of two NMOS tubes (202), r202For the output resistance of the second NMOS tube (202).
- 9. the replacement circuit of filter capacitor in light-receiving secondary module as claimed in claim 5, it is characterised in that：It is described static inclined Circuits (30) include power supply bleeder circuit and current mirror circuit；The power supply bleeder circuit includes first resistor (301), the Three resistance (303), the second electric capacity (302) and the 4th electric capacity (304), after first resistor (301) is in parallel with the second electric capacity (302), One end of first resistor (301) is connected with power supply, and the other end connects with one end of 3rd resistor (303), the 4th electric capacity (304) respectively Connect, 3rd resistor (303), the other end of the 4th electric capacity (304) are grounded；The current mirror circuit includes the 5th NMOS tube (305), the grid of the 5th NMOS tube (305) is connected with same phase unit amplifying circuit (20), the leakage of the 5th NMOS tube (305) Pole is connected with reference current IREF, the source ground of the 5th NMOS tube (305).
- 10. the replacement circuit of filter capacitor in light-receiving secondary module as claimed in claim 5, it is characterised in that：The output DC isolation circuit (40) includes the second capacitance (401), and one end and the same phase unit of second capacitance (401) are put The output end connection of big circuit (20), the other end are connected with the PINK ends of PIN-type photodiode.
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| CN201510263256.6A CN104836537B (en) | 2015-05-21 | 2015-05-21 | The alternative and circuit of filter capacitor in a kind of light-receiving secondary module |
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| CN104836537B true CN104836537B (en) | 2018-03-20 |
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| CN101848033A (en) * | 2010-04-28 | 2010-09-29 | 成都优博创技术有限公司 | Dual-rate receiving device |
| CN102142893A (en) * | 2011-01-24 | 2011-08-03 | 华为技术有限公司 | Reflectance anomaly detection method, system and device for optical distribution network |
| CN103001589A (en) * | 2011-09-12 | 2013-03-27 | 李冰 | Photoelectric signal conversion and amplification device |
| CN104297760A (en) * | 2014-10-09 | 2015-01-21 | 中国科学院合肥物质科学研究院 | Vehicle-mounted impulse type laser radar system |
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2015
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101848033A (en) * | 2010-04-28 | 2010-09-29 | 成都优博创技术有限公司 | Dual-rate receiving device |
| CN102142893A (en) * | 2011-01-24 | 2011-08-03 | 华为技术有限公司 | Reflectance anomaly detection method, system and device for optical distribution network |
| CN103001589A (en) * | 2011-09-12 | 2013-03-27 | 李冰 | Photoelectric signal conversion and amplification device |
| CN104297760A (en) * | 2014-10-09 | 2015-01-21 | 中国科学院合肥物质科学研究院 | Vehicle-mounted impulse type laser radar system |
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