CN104829985A - Teflon-based polyaniline-doped heat radiation material for LED light source and preparation method thereof - Google Patents

Teflon-based polyaniline-doped heat radiation material for LED light source and preparation method thereof Download PDF

Info

Publication number
CN104829985A
CN104829985A CN201510160494.4A CN201510160494A CN104829985A CN 104829985 A CN104829985 A CN 104829985A CN 201510160494 A CN201510160494 A CN 201510160494A CN 104829985 A CN104829985 A CN 104829985A
Authority
CN
China
Prior art keywords
weight
parts
preparation
heat radiation
radiation material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201510160494.4A
Other languages
Chinese (zh)
Inventor
张英才
刘德时
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mingguang Taiyuan Security Technology Co. Ltd.
Original Assignee
Anhui Bo Chang Electronics Technology Limited-Liability Co
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anhui Bo Chang Electronics Technology Limited-Liability Co filed Critical Anhui Bo Chang Electronics Technology Limited-Liability Co
Priority to CN201510160494.4A priority Critical patent/CN104829985A/en
Publication of CN104829985A publication Critical patent/CN104829985A/en
Pending legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L27/00Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers
    • C08L27/02Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment
    • C08L27/12Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and at least one being terminated by a halogen; Compositions of derivatives of such polymers not modified by chemical after-treatment containing fluorine atoms
    • C08L27/18Homopolymers or copolymers or tetrafluoroethene
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08KUse of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00Specific properties of additives
    • C08K2201/011Nanostructured additives
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2201/00Properties
    • C08L2201/08Stabilised against heat, light or radiation or oxydation
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2203/00Applications
    • C08L2203/20Applications use in electrical or conductive gadgets
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08LCOMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L2205/00Polymer mixtures characterised by other features
    • C08L2205/14Polymer mixtures characterised by other features containing polymeric additives characterised by shape
    • C08L2205/16Fibres; Fibrils

Landscapes

  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

The invention relates to a LED heat radiation material and especially relates to a Teflon-based polyaniline-doped heat radiation material for a LED light source and a preparation method thereof. The Teflon-based polyaniline-doped heat radiation material is prepared from 2-3 parts by weight of mesocarbon microbeads, 3-5 parts by weight of silica sol with solid content of 40-50%, 5-6 parts by weight of polyaniline fibers, 30-40 parts by weight of an ethanol aqueous solution with content of 5%, 3-5 parts by weight of sodium silicate, 4-5 parts by weight of crystalline flake graphite, 16-20 parts by weight of aluminum nitride micro-powder of 400-600 meshes, 40-50 parts by weight of Teflon micro-powder of 200-300 meshes and 2-3 parts by weight of an assistant. The LED heat radiation material has the advantages of uniform and stable thermal conductivity, environment corrosion resistance, light aging resistance, cleanliness, stain resistance, safety, insulation, cutting easiness and high raw material utilization rate and is an ideal LED lamp heat radiation material.

Description

A kind of LED light source polytetrafluoroethylene (PTFE) base doped polyaniline heat sink material and preparation method thereof
Technical field
The present invention relates to LED heat sink material, be specifically related to a kind of LED light source polytetrafluoroethylene (PTFE) base doped polyaniline heat sink material and preparation method thereof and production method thereof.
Background technology
LED is the abbreviation of photodiode, be a kind of be the semiconductor electronic component of luminous energy by electric energy conversion, there is volume little, life-span is long, current consumption is low, speed of response is fast, luminous efficiency is high, the advantages such as energy-conserving and environment-protective, it is the product of the most competitive power of the conventional light source as an alternative of generally acknowledging in the industry, also be widely used in real life, still there is many problems in current LED product, wherein heat dissipation problem is the most important thing always, common heat sink material mostly is high-thermal conductive metal, high heat conduction inorganic materials and the composite sintering of these materials form, it is large to there is excision forming difficulty in these materials, cost is higher, be subject to the shortcomings such as environmental corrosion, and with plastics and the composite heat sink material made of heat conductive filler, good radiating effect can be played, the environmental compatibility of material can be improved again, reach the use properties of efficient stable.
Tetrafluoroethylene has high temperature resistant, resistance to chemical attack, the plurality of advantages such as easy to clean, is described as the king of plastics; Aluminium nitride good heat conductivity, thermal expansivity is little, and the heat sink material being base-material mixed sintering with both can make up the defect that traditional LED dispels the heat, and has outstanding use properties.
Summary of the invention
The object of the invention is to, provide a kind of LED light source polytetrafluoroethylene (PTFE) base doped polyaniline heat sink material and preparation method thereof, to achieve these goals, the technical solution used in the present invention is as follows:
A kind of LED light source polytetrafluoroethylene (PTFE) base doped polyaniline heat sink material and preparation method thereof, it is characterized in that, material of the present invention is made up of the raw material of following weight part: MCMB 2-3, solid content are silicon sol 3-5, the polyaniline fiber 5-6 of 15-20%, 5% aqueous ethanolic solution 30-40, water glass 3-5, crystalline flake graphite 4-5,400-600 order aluminium nitride micro mist 20-25,200-300 order ptfe micropowder 40-50, auxiliary agent 2-3.
Described auxiliary agent is made up of the raw material of following weight part: silane coupling agent kh550 6-8, potassium methyl silicate 1-2, titanium acetylacetone (25% isopropanol water solution) 1-3, nano silicon 3-4, sodium hydroxide 0.1-0.2, water 20-25, preparation method is: be first dissolved in by sodium hydroxide in appropriate water, be mixed with the solution that pH value is 10-11, add nano silicon subsequently, ultrasonic immersion 40-50min, powder after alkaline purification is washed to neutral rear dry, and add water and be mixed with colloidal sol, again other leftover materials are mixed with the silicon dioxide gel of preparation subsequently, high-speed stirring dispersion 60-80min, obtain.
Described a kind of LED light source polytetrafluoroethylene (PTFE) base doped polyaniline heat sink material and preparation method thereof, its preparation method is:
(1) first by MCMB, crystalline flake graphite and silicon sol mixed grinding 20-30min, subsequently by mixed slurry drying removing moisture, gained micro mist is for subsequent use;
(2) water glass is dropped in aqueous ethanolic solution, be stirred to after it dissolves completely, drop into ptfe micropowder, continue dispersed with stirring 40-50min, then step (1) gained material and other leftover materials are added, mixed grinding dispersion 2-3h, compression moulding after material mixes completely, shaping rear base substrate blowing 15-20h under 50-60 DEG C of condition, remove moisture completely, gained base substrate fires 30-40min under 350-380 DEG C of condition, is cooled to room temperature subsequently, to obtain final product.
The invention has the advantages that: using water glass-aqueous ethanolic solution as binding agent, effective wetting polytetrafluoroethylene powder surface, improve the cohesive force between raw material, in advance through MCMB and the crystalline flake graphite of the coated process of silicon sol, dispersed raising in base-material, further increase the heat conduction and heat radiation ability of material, the polyaniline fiber of doping has excellent thermoelectricity capability, and stable performance, inexpensive light weight; The auxiliary agent added helps effect that raw material is compatible, help sintering, plastic base heat sink material prepared by the present invention has uniform and stable thermal conductivity, environmental corrosion resisting, light aging resisting, and cleaning bears dirty, safe insulation, is easy to processing and cuts, and produces efficient, raw material availability is high, is a kind of desirable LED lamp heat sink material.
Embodiment
Embodiment
The present embodiment heat sink material is made up of following raw material: MCMB 3, solid content are silicon sol 4, polyaniline fiber 6,5% aqueous ethanolic solution 40, water glass 5, crystalline flake graphite 4,600 order aluminium nitride micro mist 22,200 order ptfe micropowder 50, the auxiliary agent 2 of 18%.
Described auxiliary agent is made up of the raw material of following weight part: silane coupling agent kh550 8, potassium methyl silicate 1, titanium acetylacetone (25% isopropanol water solution) 2, nano silicon 4, sodium hydroxide 0.2, water 25, preparation method is: be first dissolved in by sodium hydroxide in appropriate water, be mixed with the solution that pH value is 10.5, add nano silicon subsequently, ultrasonic immersion 50min, powder after alkaline purification is washed to neutral rear dry, and add water and be mixed with colloidal sol, again other leftover materials are mixed with the silicon dioxide gel of preparation subsequently, high-speed stirring dispersion 65min, obtain.
Described a kind of LED light source polytetrafluoroethylene (PTFE) base doped polyaniline heat sink material and preparation method thereof, its preparation method is:
(1) first by MCMB, crystalline flake graphite and silicon sol mixed grinding 30min, subsequently by mixed slurry drying removing moisture, gained micro mist is for subsequent use;
(2) water glass is dropped in aqueous ethanolic solution, be stirred to after it dissolves completely, drop into ptfe micropowder, continue dispersed with stirring 50min, then step (1) gained material and other leftover materials are added, mixed grinding 2.5h, compression moulding after material mixes completely, shaping rear base substrate blowing 18h under 50-60 DEG C of condition, remove moisture completely, gained base substrate fires 40min under 350-380 DEG C of condition, is cooled to room temperature subsequently, to obtain final product.
It is as follows that material obtained by the present embodiment tests according to relevant criterion the performance index obtained:
Tensile strength is: 54.5MPa; Elongation at break: 0.46%; Dielectric strength: 18KV/mm; Thermal conductivity is 4.5W/m.k; Thermal diffusivity is 23.8mm 2/ s; The more single tetrafluoroethylene of thermal linear expansion coefficient reduces 85%; Illumination aging resisting performance grade: 4 grades.

Claims (2)

1. LED light source polytetrafluoroethylene (PTFE) base doped polyaniline heat sink material and preparation method thereof, it is characterized in that, this material is made up of the raw material of following weight part: MCMB 2-3, solid content are silicon sol 3-5, the polyaniline fiber 5-6 of 15-20%, 5% aqueous ethanolic solution 30-40, water glass 3-5, crystalline flake graphite 4-5,400-600 order aluminium nitride micro mist 20-25,200-300 order ptfe micropowder 40-50, auxiliary agent 2-3;
Described auxiliary agent is made up of the raw material of following weight part: silane coupling agent kh550 6-8, potassium methyl silicate 1-2, titanium acetylacetone (25% isopropanol water solution) 1-3, nano silicon 3-4, sodium hydroxide 0.1-0.2, water 20-25, preparation method is: be first dissolved in by sodium hydroxide in appropriate water, be mixed with the solution that pH value is 10-11, add nano silicon subsequently, ultrasonic immersion 40-50min, powder after alkaline purification is washed to neutral rear dry, and add water and be mixed with colloidal sol, again other leftover materials are mixed with the silicon dioxide gel of preparation subsequently, high-speed stirring dispersion 60-80min, obtain.
2. a kind of LED light source polytetrafluoroethylene (PTFE) base doped polyaniline heat sink material as claimed in claim 1 and preparation method thereof, its preparation method is:
(1) first by MCMB, crystalline flake graphite and silicon sol mixed grinding 20-30min, subsequently by mixed slurry drying removing moisture, gained micro mist is for subsequent use;
(2) water glass is dropped in aqueous ethanolic solution, be stirred to after it dissolves completely, drop into ptfe micropowder, continue dispersed with stirring 40-50min, then step (1) gained material and other leftover materials are added, mixed grinding dispersion 2-3h, compression moulding after material mixes completely, shaping rear base substrate blowing 15-20h under 50-60 DEG C of condition, remove moisture completely, gained base substrate fires 30-40min under 350-380 DEG C of condition, is cooled to room temperature subsequently, to obtain final product.
CN201510160494.4A 2015-04-07 2015-04-07 Teflon-based polyaniline-doped heat radiation material for LED light source and preparation method thereof Pending CN104829985A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510160494.4A CN104829985A (en) 2015-04-07 2015-04-07 Teflon-based polyaniline-doped heat radiation material for LED light source and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510160494.4A CN104829985A (en) 2015-04-07 2015-04-07 Teflon-based polyaniline-doped heat radiation material for LED light source and preparation method thereof

Publications (1)

Publication Number Publication Date
CN104829985A true CN104829985A (en) 2015-08-12

Family

ID=53808204

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510160494.4A Pending CN104829985A (en) 2015-04-07 2015-04-07 Teflon-based polyaniline-doped heat radiation material for LED light source and preparation method thereof

Country Status (1)

Country Link
CN (1) CN104829985A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109517384A (en) * 2017-09-20 2019-03-26 四川东邦碳纤维材料有限公司 A kind of battery frame body material and battery framework prepared therefrom
CN112280062A (en) * 2020-10-15 2021-01-29 西南科技大学 Hydrophobic low-density high-strength polystyrene microsphere and preparation method thereof
CN112322246A (en) * 2020-12-02 2021-02-05 句容市双诚电子有限公司 Low-consumption temperature-resistant conductive adhesive for sensor and preparation method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102822279A (en) * 2010-04-07 2012-12-12 电气化学工业株式会社 Heat dissipating resin composition for led lighting housing and heat dissipating housing for led lighting
CN103214910A (en) * 2013-04-03 2013-07-24 上海三思电子工程有限公司 Radiation heat dissipation coating for reducing light-emitting diode (LED) chip junction temperature and preparation method thereof
CN103547644A (en) * 2011-06-17 2014-01-29 日本瑞翁株式会社 Thermally conductive pressure-sensitive adhesive sheet-like molded body, method for producing same, and electronic device
CN103555087A (en) * 2013-09-25 2014-02-05 天长市天泰光电科技有限公司 Fluororesin heat radiation paint for LED lamp and preparation method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102822279A (en) * 2010-04-07 2012-12-12 电气化学工业株式会社 Heat dissipating resin composition for led lighting housing and heat dissipating housing for led lighting
CN103547644A (en) * 2011-06-17 2014-01-29 日本瑞翁株式会社 Thermally conductive pressure-sensitive adhesive sheet-like molded body, method for producing same, and electronic device
CN103214910A (en) * 2013-04-03 2013-07-24 上海三思电子工程有限公司 Radiation heat dissipation coating for reducing light-emitting diode (LED) chip junction temperature and preparation method thereof
CN103555087A (en) * 2013-09-25 2014-02-05 天长市天泰光电科技有限公司 Fluororesin heat radiation paint for LED lamp and preparation method thereof

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109517384A (en) * 2017-09-20 2019-03-26 四川东邦碳纤维材料有限公司 A kind of battery frame body material and battery framework prepared therefrom
CN112280062A (en) * 2020-10-15 2021-01-29 西南科技大学 Hydrophobic low-density high-strength polystyrene microsphere and preparation method thereof
CN112280062B (en) * 2020-10-15 2022-07-19 中海石油(中国)有限公司湛江分公司 Hydrophobic low-density high-strength polystyrene microsphere and preparation method thereof
CN112322246A (en) * 2020-12-02 2021-02-05 句容市双诚电子有限公司 Low-consumption temperature-resistant conductive adhesive for sensor and preparation method thereof

Similar Documents

Publication Publication Date Title
CN101591478B (en) Dry surface modification method for electronic grade super-fine silicon micro-powder
CN104829985A (en) Teflon-based polyaniline-doped heat radiation material for LED light source and preparation method thereof
CN105086666A (en) Radiation cooling paint for LED radiator surfaces
CN104231498B (en) A kind of aluminum particulate/PVDF polymer dielectric and preparation method thereof
CN104829996A (en) Teflon-based modified glass fiber doped heat dissipation material for LED light source and preparation method thereof
CN104829982A (en) Teflon-based light high-efficiency dissipation material for LED light source and preparation method thereof
CN104829977A (en) Teflon-based polyphenylene sulfide-doped heat radiation material for LED light source and preparation method thereof
CN201038683Y (en) Wholly sealed insulation glue casting aluminum busbar slot
CN1278995C (en) Method for preventing hydrolysis of aluminium nitride
CN104893192A (en) Teflon-based nano copper-doped heat radiation material used for LED light source and preparation method thereof
CN104829988A (en) Teflon-based irradiation and aging-resistant heat radiation material used for LED light source and preparation method thereof
CN107446528B (en) A kind of heat-conducting glue and preparation method thereof
CN104829984A (en) Teflon-based low-heat resistance heat radiation material for LED light source and preparation method thereof
CN104829989A (en) Teflon-based nano stannic oxide-doped heat radiation material used for LED light source and preparation method thereof
CN104829983A (en) Teflon-based calcium niobate-doped heat radiation material for LED light source and preparation method thereof
CN104829997A (en) Teflon-based high thermal conductivity graphite doped heat dissipation material for LED light source and preparation method thereof
CN104877280A (en) Polytetrafluoroethylene-based magnetic efficient heat dissipation material for LED light source and preparation method of polytetrafluoroethylene-based magnetic efficient heat dissipation material
CN104829980A (en) Teflon-based silver chelate-doped heat radiation material for LED light source and preparation method thereof
CN104829990A (en) Teflon-based iron copper powder doped heat dissipation material for LED light source and preparation method thereof
CN104829986A (en) Teflon-based high-heat stability heat dissipation material for LED light source and preparation method thereof
CN104829978A (en) Teflon-based high-heat radiation heat dissipation material for LED light source and preparation method thereof
CN104829979A (en) Teflon-based tungsten and molybdenum oxide-doped heat radiation material for LED light source and preparation method thereof
CN104829994A (en) Teflon-based manganese dioxide nanorod doped heat dissipation material for LED light source and preparation method thereof
CN207869428U (en) A kind of graphene heating film
CN104832894A (en) Teflon radiating material doped with nanosized tin for LED light source and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
CB03 Change of inventor or designer information
CB03 Change of inventor or designer information

Inventor after: Zhang Yingcai

Inventor before: Zhang Yingcai

Inventor before: Liu Deshi

TA01 Transfer of patent application right
TA01 Transfer of patent application right

Effective date of registration: 20170316

Address after: 239400 Anhui Province Jian Xi Zhen Zhu Gang Cun, Mingguang City

Applicant after: Mingguang Taiyuan Security Technology Co. Ltd.

Address before: 239000, Chuzhou Province, East Garden Road, No. 555, Konka industrial transfer park, building No. 8, No.

Applicant before: Anhui Bo Chang electronics technology limited-liability company

RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20150812