CN104832894A - Teflon radiating material doped with nanosized tin for LED light source and preparation method thereof - Google Patents

Teflon radiating material doped with nanosized tin for LED light source and preparation method thereof Download PDF

Info

Publication number
CN104832894A
CN104832894A CN201510168833.3A CN201510168833A CN104832894A CN 104832894 A CN104832894 A CN 104832894A CN 201510168833 A CN201510168833 A CN 201510168833A CN 104832894 A CN104832894 A CN 104832894A
Authority
CN
China
Prior art keywords
parts
tin
teflon
preparation
radiating material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201510168833.3A
Other languages
Chinese (zh)
Inventor
张超
郑颖
肖建平
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Anhui Zhong Wei Photoelectric Material Co Ltd
Original Assignee
Anhui Zhong Wei Photoelectric Material Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Anhui Zhong Wei Photoelectric Material Co Ltd filed Critical Anhui Zhong Wei Photoelectric Material Co Ltd
Priority to CN201510168833.3A priority Critical patent/CN104832894A/en
Publication of CN104832894A publication Critical patent/CN104832894A/en
Pending legal-status Critical Current

Links

Abstract

The invention relates to LED radiating materials, in particular to a Teflon radiating material doped with nanosized tin for an LED light source and a preparation method thereof. The Teflon radiating material doped with the nanosized tin is composed of, by weight, 5-8 parts of 400-600-mesh gamma aluminium oxide micro powder, 2-4 parts of polytrifluorochloroethylene, 0.1-0.2 part of trisodium phosphate, 2-3 parts of the nanosized tin, 1-2 parts of normal-temperature bubble-free surfactant, 30-40 parts of water, 3-5 parts of sodium silicate, 4-5 parts of 200-300-mesh aluminosilicates, 4-5 parts of silica sol with a solid content of 15-20%, 1-2 parts of sodium hexametaphosphate, 20-25 parts of aluminium nitride micro powder of 400-600 meshes, 40-50 parts of 200-300-mesh Teflon micro powder and 2-3 parts of auxiliaries. The prepared Teflon radiating material doped with the nanosized tin has the advantages of efficient, uniform and stable thermal conductivity, environment corrosion resistance, good thermal stability, the clean surface, soiling resistance, safety and insulation. The Teflon radiating material doped with the nanosized tin is easy to process and cut, and is an environment-friendly efficient LED lamp radiating material.

Description

A kind of LED light source PTFE base dopen Nano tin heat sink material and preparation method thereof
Technical field
The present invention relates to LED heat sink material, be specifically related to a kind of LED light source PTFE base dopen Nano tin heat sink material and preparation method thereof and production method thereof.
Background technology
LED is the abbreviation of light emitting diode, be a kind of be the semiconductor electronic component of luminous energy by electric energy conversion, there is volume little, life-span is long, power consumption is low, reaction speed is fast, luminous efficiency is high, the advantages such as energy-conserving and environment-protective, it is the product of the most competitiveness of the conventional light source as an alternative of generally acknowledging in the industry, also be widely used in real life, still there is many problems in current LED product, wherein heat dissipation problem is the most important thing always, common heat sink material mostly is high-thermal conductive metal, high heat conduction inorganic material and the composite sintering of these materials form, it is large to there is excision forming difficulty in these materials, cost is higher, be subject to the shortcomings such as environmental corrosion, and with plastics and the composite heat sink material made of heat filling, good radiating effect can be played, the environmental suitability of material can be improved again, reach the serviceability of efficient stable.
Polytetrafluoroethylene (PTFE) has high temperature resistant, resistance to chemical attack, the plurality of advantages such as easy to clean, is described as the king of plastics; Aluminium nitride good heat conductivity, thermal coefficient of expansion is little, and the heat sink material being base-material mixed sintering with both can make up the defect that traditional LED dispels the heat, and has outstanding serviceability.
Summary of the invention
The object of the invention is to, provide a kind of LED light source PTFE base dopen Nano tin heat sink material and preparation method thereof, to achieve these goals, the technical solution used in the present invention is as follows:
A kind of LED light source PTFE base dopen Nano tin heat sink material and preparation method thereof, it is characterized in that, material of the present invention is made up of the raw material of following weight portion: 400-600 order γ type alumina powder 5-8, polytrifluorochloroethylene 2-4, tertiary sodium phosphate 0.1-0.2, nanometer tin 2-3, normal temperature bulb-less surface activity agent 1-2, water 30-40, sodium metasilicate 3-5, 200-300 order Si-Al molecular sieve 4-5, solid content is the Ludox 4-5 of 15-20%, calgon 1-2, 400-600 order aluminium nitride micro mist 20-25, 200-300 order ptfe micropowder 40-50, auxiliary agent 2-3.
Described auxiliary agent is made up of the raw material of following weight portion: Sodium Polyacrylate 1-3, aluminium secondary butylate 0.1-0.2, aluminate coupling agent 6-8, nano aluminium oxide 3-5,0.05% phosphoric acid solution 4-5, neopelex 1-2, water 25-30, preparation method is: first drop in phosphoric acid solution by nano aluminium oxide, ultrasonic immersion 20-30min, powder after acid treatment is washed to neutral rear dry, and be hybridly prepared into alumina sol with water, finally again other leftover materials are mixed with colloidal sol, high-speed stirred dispersion 50-60min, obtains auxiliary agent.
Described a kind of LED light source PTFE base dopen Nano tin heat sink material and preparation method thereof, its preparation method is:
(1) first nanometer tin is mixed with Ludox, ultrasonic disperse 20-30min, make nanometer tin dispersed in colloidal sol, add Si-Al molecular sieve more subsequently, by mixed material heat treatment 2-3h under 120-150 DEG C of condition after being uniformly mixed, grinding distribution 20-30min after material cooling after heat treatment, gained material is for subsequent use;
(2) sodium metasilicate, tertiary sodium phosphate, normal temperature bulb-less surface activity agent are dropped in water, after stirring makes material dissolve dispersion completely, drop into ptfe micropowder, continue dispersed with stirring 40-50min, then step (1) gained material and other leftover materials are added, mixed grinding dispersion 2-3h, it is compressing after material mixes completely, shaping rear base substrate blowing 15-20h under 50-60 DEG C of condition, remove moisture completely, gained base substrate fires 30-40min under 350-380 DEG C of condition, is cooled to room temperature subsequently, to obtain final product.
The invention has the advantages that: using the mixed aqueous solution of sodium metasilicate, tertiary sodium phosphate and surfactant as binding agent, improve the surface wettability of polytetrafluoroethylpowder powder, molding bonded easier in other raw material, and Si-Al molecular sieve loaded with nano tin mixed powder is after high-temperature heat treatment, can in uniform and stable doping and matrix material, improve the capacity of heat transmission of material, effect that the auxiliary agent of interpolation has short raw material compatible; Polytetrafluoroethylene (PTFE) prepared by the present invention-aluminium nitride compound plastic base heat sink material has efficient, even, stable thermal conductivity, environmental corrosion resisting, Heat stability is good, clean surface bears dirty, safe insulation, being easy to processing cut, is a kind of LED lamp heat sink material of environment-friendly high-efficiency.
Detailed description of the invention
Embodiment
The present embodiment heat sink material is made up of following raw material: 400 order γ type alumina powders 8, polytrifluorochloroethylene 4, tertiary sodium phosphate 0.1, nanometer tin 3, normal temperature bulb-less surface activity agent 2, water 40, sodium metasilicate 5,300 order Si-Al molecular sieve 5, solid content are Ludox 5, calgon 2,600 order aluminium nitride micro mist 25,300 order ptfe micropowder 50, the auxiliary agent 3 of 20%.
Described auxiliary agent is made up of the raw material of following weight portion: Sodium Polyacrylate 2, aluminium secondary butylate 0.1, aluminate coupling agent 7, nano aluminium oxide 4,0.05% phosphoric acid solution 5, neopelex 1.6, water 28, preparation method is: first drop in phosphoric acid solution by nano aluminium oxide, ultrasonic immersion 30min, powder after acid treatment is washed to neutral rear dry, and be hybridly prepared into alumina sol with water, finally again other leftover materials are mixed with colloidal sol, high-speed stirred dispersion 55min, obtains auxiliary agent.
Described a kind of LED light source PTFE base dopen Nano tin heat sink material and preparation method thereof, its preparation method is:
(1) first nanometer tin is mixed with Ludox, ultrasonic disperse 30min, make nanometer tin dispersed in colloidal sol, add Si-Al molecular sieve more subsequently, by mixed material heat treatment 3h under 120-150 DEG C of condition after being uniformly mixed, grinding distribution 30min after material cooling after heat treatment, gained material is for subsequent use;
(2) sodium metasilicate, tertiary sodium phosphate, normal temperature bulb-less surface activity agent are dropped in water, after stirring makes material dissolve dispersion completely, drop into ptfe micropowder, continue dispersed with stirring 50min, then step (1) gained material and other leftover materials are added, mixed grinding dispersion 2.5h, it is compressing after material mixes completely, shaping rear base substrate blowing 18h under 50-60 DEG C of condition, remove moisture completely, gained base substrate fires 40min under 350-380 DEG C of condition, is cooled to room temperature subsequently, to obtain final product.
It is as follows that material obtained by the present embodiment tests according to relevant criterion the performance indications obtained:
Hot strength is: 45.3MPa; Elongation at break: 0.37%; Dielectric strength: 23.4KV/mm; Thermal conductivity factor is 5.9W/m.k; Thermal diffusion coefficient is 29.8mm 2/ s; The more single polytetrafluoroethylene (PTFE) of thermal linear expansion coefficient reduces 76%; Illumination aging resisting performance grade: 4.5 grades.

Claims (2)

1. LED light source PTFE base dopen Nano tin heat sink material and preparation method thereof, it is characterized in that, this material is made up of the raw material of following weight portion: 400-600 order γ type alumina powder 5-8, polytrifluorochloroethylene 2-4, tertiary sodium phosphate 0.1-0.2, nanometer tin 2-3, normal temperature bulb-less surface activity agent 1-2, water 30-40, sodium metasilicate 3-5,200-300 order Si-Al molecular sieve 4-5, solid content are Ludox 4-5, calgon 1-2,400-600 order aluminium nitride micro mist 20-25,200-300 order ptfe micropowder 40-50, the auxiliary agent 2-3 of 15-20%;
Described auxiliary agent is made up of the raw material of following weight portion: Sodium Polyacrylate 1-3, aluminium secondary butylate 0.1-0.2, aluminate coupling agent 6-8, nano aluminium oxide 3-5,0.05% phosphoric acid solution 4-5, neopelex 1-2, water 25-30, preparation method is: first drop in phosphoric acid solution by nano aluminium oxide, ultrasonic immersion 20-30min, powder after acid treatment is washed to neutral rear dry, and be hybridly prepared into alumina sol with water, finally again other leftover materials are mixed with colloidal sol, high-speed stirred dispersion 50-60min, obtains auxiliary agent.
2. a kind of LED light source PTFE base dopen Nano tin heat sink material as claimed in claim 1 and preparation method thereof, its preparation method is:
(1) first nanometer tin is mixed with Ludox, ultrasonic disperse 20-30min, make nanometer tin dispersed in colloidal sol, add Si-Al molecular sieve more subsequently, by mixed material heat treatment 2-3h under 120-150 DEG C of condition after being uniformly mixed, grinding distribution 20-30min after material cooling after heat treatment, gained material is for subsequent use;
(2) sodium metasilicate, tertiary sodium phosphate, normal temperature bulb-less surface activity agent are dropped in water, after stirring makes material dissolve dispersion completely, drop into ptfe micropowder, continue dispersed with stirring 40-50min, then step (1) gained material and other leftover materials are added, mixed grinding dispersion 2-3h, it is compressing after material mixes completely, shaping rear base substrate blowing 15-20h under 50-60 DEG C of condition, remove moisture completely, gained base substrate fires 30-40min under 350-380 DEG C of condition, is cooled to room temperature subsequently, to obtain final product.
CN201510168833.3A 2015-04-11 2015-04-11 Teflon radiating material doped with nanosized tin for LED light source and preparation method thereof Pending CN104832894A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201510168833.3A CN104832894A (en) 2015-04-11 2015-04-11 Teflon radiating material doped with nanosized tin for LED light source and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201510168833.3A CN104832894A (en) 2015-04-11 2015-04-11 Teflon radiating material doped with nanosized tin for LED light source and preparation method thereof

Publications (1)

Publication Number Publication Date
CN104832894A true CN104832894A (en) 2015-08-12

Family

ID=53810957

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201510168833.3A Pending CN104832894A (en) 2015-04-11 2015-04-11 Teflon radiating material doped with nanosized tin for LED light source and preparation method thereof

Country Status (1)

Country Link
CN (1) CN104832894A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109206990A (en) * 2018-10-30 2019-01-15 首都航天机械有限公司 A kind of priming paint and the preparation method and application thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005042107A (en) * 2003-07-09 2005-02-17 Toray Ind Inc Resin composition, tablet, molded product, and chassis or enclosure
CN102640311A (en) * 2009-11-26 2012-08-15 日东电工株式会社 Substrate for LED mounting
CN102822279A (en) * 2010-04-07 2012-12-12 电气化学工业株式会社 Heat dissipating resin composition for led lighting housing and heat dissipating housing for led lighting
CN104164020A (en) * 2014-07-31 2014-11-26 青岛吉顺隆商贸有限公司 Tube for high-voltage wires

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005042107A (en) * 2003-07-09 2005-02-17 Toray Ind Inc Resin composition, tablet, molded product, and chassis or enclosure
CN102640311A (en) * 2009-11-26 2012-08-15 日东电工株式会社 Substrate for LED mounting
CN102822279A (en) * 2010-04-07 2012-12-12 电气化学工业株式会社 Heat dissipating resin composition for led lighting housing and heat dissipating housing for led lighting
CN104164020A (en) * 2014-07-31 2014-11-26 青岛吉顺隆商贸有限公司 Tube for high-voltage wires

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109206990A (en) * 2018-10-30 2019-01-15 首都航天机械有限公司 A kind of priming paint and the preparation method and application thereof

Similar Documents

Publication Publication Date Title
CN104861748A (en) Heat dissipating paint strongly resistant to ageing and preparation method
CN108329495A (en) Graphene with biomimetic features-Cellulose nanocrystal composite heat-conducting film and its preparation
CN105086666A (en) Radiation cooling paint for LED radiator surfaces
CN103043908A (en) Novel fluorescent glass and preparation method thereof
CN104829996A (en) Teflon-based modified glass fiber doped heat dissipation material for LED light source and preparation method thereof
CN104832894A (en) Teflon radiating material doped with nanosized tin for LED light source and preparation method thereof
CN104829977A (en) Teflon-based polyphenylene sulfide-doped heat radiation material for LED light source and preparation method thereof
CN104829985A (en) Teflon-based polyaniline-doped heat radiation material for LED light source and preparation method thereof
CN102244153B (en) Preparation method of graphite heat radiation fin
CN104829982A (en) Teflon-based light high-efficiency dissipation material for LED light source and preparation method thereof
CN104829988A (en) Teflon-based irradiation and aging-resistant heat radiation material used for LED light source and preparation method thereof
CN104893192A (en) Teflon-based nano copper-doped heat radiation material used for LED light source and preparation method thereof
CN105985623A (en) PC-PET (polycarbonate and polyethylene terephthalate) based LED radiating material comprising modified tetrapod-like zinc oxide whiskers and preparation method thereof
CN104877280A (en) Polytetrafluoroethylene-based magnetic efficient heat dissipation material for LED light source and preparation method of polytetrafluoroethylene-based magnetic efficient heat dissipation material
CN104829989A (en) Teflon-based nano stannic oxide-doped heat radiation material used for LED light source and preparation method thereof
CN104829997A (en) Teflon-based high thermal conductivity graphite doped heat dissipation material for LED light source and preparation method thereof
CN104144597B (en) Heat-conduction-fiber-enhanced high heat conductivity graphite cooling fin and manufacturing method
CN104829990A (en) Teflon-based iron copper powder doped heat dissipation material for LED light source and preparation method thereof
CN108003825A (en) Conductive adhesive for LED encapsulation and preparation method thereof
CN104844995A (en) Polytetrafluoroethylene based nano-cerium oxide doped heat dissipation material for LED light sources and preparation method thereof
CN104829987A (en) Teflon-based spherical silver-coated copper powder-doped heat radiation material used for LED light source and preparation method thereof
CN104829980A (en) Teflon-based silver chelate-doped heat radiation material for LED light source and preparation method thereof
CN104832895A (en) Polytetrafluoroethylene-doped ferrocene radiating material for LED light source and preparation method thereof
CN104877281A (en) High-efficiency heat dissipating material based on polytetrafluoroethylene doped with bamboo charcoal for LED light source and preparation method of high-efficiency heat dissipating material
CN104829978A (en) Teflon-based high-heat radiation heat dissipation material for LED light source and preparation method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
EXSB Decision made by sipo to initiate substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20150812

RJ01 Rejection of invention patent application after publication