Base and doped polyphenylene sulfide heat sink material of a kind of LED light source tetrafluoroethylene and preparation method thereof
Technical field
The present invention relates to LED heat sink material, be specifically related to base and doped polyphenylene sulfide heat sink material of a kind of LED light source tetrafluoroethylene and preparation method thereof and production method thereof.
Background technology
LED is the abbreviation of photodiode, be a kind of be the semiconductor electronic component of luminous energy by electric energy conversion, there is volume little, life-span is long, current consumption is low, speed of response is fast, luminous efficiency is high, the advantages such as energy-conserving and environment-protective, it is the product of the most competitive power of the conventional light source as an alternative of generally acknowledging in the industry, also be widely used in real life, still there is many problems in current LED product, wherein heat dissipation problem is the most important thing always, common heat sink material mostly is high-thermal conductive metal, high heat conduction inorganic materials and the composite sintering of these materials form, it is large to there is excision forming difficulty in these materials, cost is higher, be subject to the shortcomings such as environmental corrosion, and with plastics and the composite heat sink material made of heat conductive filler, good radiating effect can be played, the environmental compatibility of material can be improved again, reach the use properties of efficient stable.
Tetrafluoroethylene has high temperature resistant, resistance to chemical attack, the plurality of advantages such as easy to clean, is described as the king of plastics; Aluminium nitride good heat conductivity, thermal expansivity is little, and the heat sink material being base-material mixed sintering with both can make up the defect that traditional LED dispels the heat, and has outstanding use properties.
Summary of the invention
The object of the invention is to, provide base and doped polyphenylene sulfide heat sink material of a kind of LED light source tetrafluoroethylene and preparation method thereof, to achieve these goals, the technical solution used in the present invention is as follows:
Base and doped polyphenylene sulfide heat sink material of a kind of LED light source tetrafluoroethylene and preparation method thereof, it is characterized in that, material of the present invention is made up of the raw material of following weight part: 150-300 order tinbronze micro mist 3-5, nano-nickel powder 2-3, solid content are silicon sol 4-5, the polyphenylene sulfide 5-8 of 20-25%, aluminium dihydrogen phosphate 2-3, water glass 1-3,5% aqueous ethanolic solution 30-40,400-600 order aluminium nitride micro mist 20-25,200-300 order ptfe micropowder 40-50, auxiliary agent 2-3.
Described auxiliary agent is made up of the raw material of following weight part: silane coupling agent kh550 6-8, potassium methyl silicate 1-2, titanium acetylacetone (25% isopropanol water solution) 1-3, nano silicon 3-4, sodium hydroxide 0.1-0.2, water 20-25, preparation method is: be first dissolved in by sodium hydroxide in appropriate water, be mixed with the solution that pH value is 10-11, add nano silicon subsequently, ultrasonic immersion 40-50min, powder after alkaline purification is washed to neutral rear dry, and add water and be mixed with colloidal sol, again other leftover materials are mixed with the silicon dioxide gel of preparation subsequently, high-speed stirring dispersion 60-80min, obtain.
Described base and doped polyphenylene sulfide heat sink material of a kind of LED light source tetrafluoroethylene and preparation method thereof, its preparation method is:
(1) first dropped in silicon sol by nanometer glass putty, ultrasonic disperse 40-50min, makes nanometer tin dispersed in colloidal sol, subsequently thermal treatment 4-5h under 100-120 DEG C of condition, the material grinding distribution 20-30min after thermal treatment, and gained powder is for subsequent use;
(2) aluminium dihydrogen phosphate, water glass are dropped in aqueous ethanolic solution, after stirring makes material dissolve dispersion completely, drop into ptfe micropowder, continue dispersed with stirring 40-50min, then step (1) gained material and other leftover materials are added, mixed grinding dispersion 2-3h, compression moulding after material mixes completely, shaping rear base substrate blowing 15-20h under 50-60 DEG C of condition, remove moisture completely, gained base substrate fires 30-40min under 350-380 DEG C of condition, is cooled to room temperature subsequently, to obtain final product.
The invention has the advantages that: using water glass, aluminium dihydrogen phosphate-aqueous ethanolic solution as binding agent, improve polytetrafluoroethylpowder powder wettability of the surface, bonds well between each raw material, through nanometer glass putty energy good distribution in base-material that the coated postheat treatment of silicon sol obtains, improve the heat-sinking capability of material, the polyphenylene sulfide of doping has outstanding radiation hardness and heat conductivility, and can effectively prevent mixing material radiative aging, the auxiliary agent of interpolation helps effect that raw material is compatible, help sintering; Tetrafluoroethylene prepared by the present invention-aluminium nitride compound plastic base heat sink material has efficient, even, stable thermal conductivity, environmental corrosion resisting, light aging resisting, and cleaning bears dirty, safe insulation, and being easy to processing and cutting, is a kind of desirable LED lamp heat sink material.
Embodiment
Embodiment
The present embodiment heat sink material is made up of following raw material: 300 order tinbronze micro mists 4, nano-nickel powder 3, solid content are silicon sol 5, polyphenylene sulfide 6, aluminium dihydrogen phosphate 3, water glass 2,5% aqueous ethanolic solution 40,400 order aluminium nitride micro mist 22,300 order ptfe micropowder 50, the auxiliary agent 3 of 25%.
Described auxiliary agent is made up of the raw material of following weight part: silane coupling agent kh550 8, potassium methyl silicate 1, titanium acetylacetone (25% isopropanol water solution) 2, nano silicon 4, sodium hydroxide 0.2, water 25, preparation method is: be first dissolved in by sodium hydroxide in appropriate water, be mixed with the solution that pH value is 10.5, add nano silicon subsequently, ultrasonic immersion 50min, powder after alkaline purification is washed to neutral rear dry, and add water and be mixed with colloidal sol, again other leftover materials are mixed with the silicon dioxide gel of preparation subsequently, high-speed stirring dispersion 65min, obtain.
Described base and doped polyphenylene sulfide heat sink material of a kind of LED light source tetrafluoroethylene and preparation method thereof, its preparation method is:
(1) first dropped in silicon sol by nanometer glass putty, ultrasonic disperse 50min, makes nanometer tin dispersed in colloidal sol, subsequently thermal treatment 5h under 100-120 DEG C of condition, the material grinding distribution 25min after thermal treatment, and gained powder is for subsequent use;
(2) aluminium dihydrogen phosphate, water glass are dropped in aqueous ethanolic solution, after stirring makes material dissolve dispersion completely, drop into ptfe micropowder, continue dispersed with stirring 50min, then step (1) gained material and other leftover materials are added, mixed grinding dispersion 2.5h, compression moulding after material mixes completely, shaping rear base substrate blowing 16h under 50-60 DEG C of condition, remove moisture completely, gained base substrate fires 40min under 350-380 DEG C of condition, is cooled to room temperature subsequently, to obtain final product.
It is as follows that material obtained by the present embodiment tests according to relevant criterion the performance index obtained:
Tensile strength is: 60.5MPa; Elongation at break: 0.50%; Dielectric strength: 23KV/mm; Thermal conductivity is 5.6W/m.k; Thermal diffusivity is 26.8mm
2/ s; The more single tetrafluoroethylene of thermal linear expansion coefficient reduces 84%; Illumination aging resisting performance grade: 4.5 grades.