CN104821352A - 一种InGaN/GaN量子阱界面中断生长结构及方法 - Google Patents

一种InGaN/GaN量子阱界面中断生长结构及方法 Download PDF

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CN104821352A
CN104821352A CN201510249514.5A CN201510249514A CN104821352A CN 104821352 A CN104821352 A CN 104821352A CN 201510249514 A CN201510249514 A CN 201510249514A CN 104821352 A CN104821352 A CN 104821352A
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徐丽萍
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Abstract

本发明提出一种InGaN/GaN量子阱界面中断生长结构及方法，包括：在蓝宝石衬底上依次生长低温GaN成核层、非故意掺杂高温GaN层和n型GaN层；在所述n型GaN层上采用InGaN/GaN界面中断生长技术生长多量子阱层；在所述多量子阱层上依次生长p型AlGaN层和p型GaN层。该方法的特征在于，在InGaN量子阱生长初期，周期性地通入/停止TMIn进入反应室，在增加In气相分压的同时，增加In扩散时间，更加有效地提高InGaN量子阱生长初期In组分，使得InGaN量子阱In组分更加均匀，InGaN/GaN界面更加陡峭，从而提高LED波长均匀性和量子阱发光效率。该方法无需进行流量调整，简单实用，可操作性强。

Description

一种InGaN/GaN量子阱界面中断生长结构及方法
技术领域
本发明属于半导体技术领域，具体涉及一种InGaN/GaN量子阱界面中断生长结构及方法。
背景技术
相比于其它传统光源，高性能GaN基LED具有光电转换效率高、寿命长、损耗低、无污染等显著优势，目前已经普遍应用于通用照明、交通信号指示、显示屏和背光源等领域。随着大规模生产的不断进步，GaN基LED在提高发光效率和降低成本方面取得了飞速发展，尤其在照明领域，GaN基LED的渗透率稳步提高。对GaN基LED的外延生产来讲，提高InGaN/GaN量子阱界面陡峭性和量子阱中In组分均匀性是提高LED发光效率和波长均匀性的关键，对提高LED发光效率和生产良率以及降低生产成本具有非常重要意义。
研究表明，在InGaN量子阱中In组分并不是恒定不变的，而是随着量子阱厚度的变化而变化。由于In原子的引入导致InGaN/GaN界面处应变能增加，这种应变能会排斥In原子的引入，这种现象被称为pulling effect。在InGaN量子阱生长初期，In原子引入效率较低，随着InGaN厚度增加，In原子引入效率逐渐增加，直至达到饱和。在量子阱生长初期In组分明显低导致In组分在InGaN量子阱中分布不均匀，使得LED波长均匀性差，InGaN/GaN界面不陡峭，LED发光效率低。由于InGaN量子阱的厚度只有约3nm，因此如何提高InGaN量子生长初期In组分是关键。为改善LED波长均匀性，中国发明专利(CN 101872719A)提出一种改善InGaN量子阱In组分均匀性的外延生长方法，在InGaN量子阱生长初期，通过直接增加In在反应室中气相分压，以期达到增加量子阱生长初期In组分的目的。由于In组分由温度、In气相分压、扩散时间决定，在温度不变的情况下，In组分由In气相分压和扩散时间共同决定。因此，该方法只考虑了In气相分压，没有考虑扩散时间对In组分均匀性的影响。
发明内容
本发明针对现有InGaN量子阱In组分不均匀问题，提供一种InGaN/GaN量子阱界面中断生长结构及方法，目的是改善InGaN量子阱In组分均匀性和InGaN/GaN界面陡峭性。该方法在InGaN量子阱生长初期采用界面中断生长技术，在增加In气相分压的同时，增加In扩散时间，更加有效地提高InGaN量子阱生长初期In组分，使得InGaN量子阱In组分更加均匀，InGaN/GaN界面更加陡峭，从而提高LED波长均匀性和量子阱发光效率。该方法无需进行流量调整，简单实用，可操作性强。
具体实现步骤如下：
(1)在蓝宝石衬底上生长低温GaN成核层、非故意掺杂高温GaN层和n型GaN层。
(2)在所述n型GaN层上采用InGaN/GaN界面中断生长技术生长多量子阱层，步骤如下：①在InGaN量子阱生长初期的20-30s内，在TMIn流量保持不变的情况下，周期性地通入/停止TMIn进入反应室，周期数为1-10。通入TMIn进入反应室时间为T1，停止通入TMIn进入反应室时间为T2，此时TMIn进入Vent管路，不进入反应室，如此循环1-10个周期。在TMIn流量不变的情况下，通过改变T1调整量子阱生长初期In组分。延长通入TMIn进入反应室时间T1可以增加量子阱生长初期In组分，使量子阱生长初期In组分与量子阱生长后期In组分相等，InGaN/GaN量子阱界面更加陡峭，In组分随量子阱厚度的增加分布更加均匀。停止通入TMIn进入反应室T2时，增加In在衬底表明扩散时间不仅可以增加In引入效率，而且使得In组分在整个衬底表明分布更加均匀，提高片内波长均匀性。②完成上述周期性生长后，开始通入正常流量的TMIn和TEGa进入反应室生长InGaN，直至InGaN量子阱生长完成。③反复进行步骤①和②，周期数为3-20，完成InGaN/GaN多量子阱的生长。
(3)在步骤(2)所述多量子阱层上依次生长p型A1GaN层和p型GaN层，完成整个LED的生长。
附图说明
图1是本发明所述InGaN/GaN量子阱界面中断生长技术示意图。
具体实施方式
结合图1，本发明提供一种InGaN/GaN量子阱界面中断生长结构及方法，目的是改善InGaN量子阱In组分均匀性和InGaN/GaN界面陡峭性。具体实施步骤如下：
(1)在蓝宝石衬底上550℃生长低温GaN成核层、非故意掺杂高温GaN层和n型GaN层，高温生长温度为1050～1100℃。
(2)在所述n型GaN层上采用InGaN/GaN界面中断生长技术生长多量子阱层，步骤如下：①调整反应室气氛为完全N2气氛，生长压力为200～600mbar，N2流量为42slm，根据目标波长调整反应室温度至745℃，NH3流量为30slm。保持NH3流量不变，准备生长InGaN/GaN多量子阱。在InGaN量子阱生长初期的30s内，保持TMIn的流量为正常生长量子阱的流量1200sccm，周期性地通入/停止TMIn进入反应室，周期数为5。通入TMIn进入反应室时间T1为2s，停止通入TMIn进入反应室时间T2为3s，此时TMIn进入Vent管路，不进入反应室，如此循环6个周期。②完成上述周期性生长后，开始通入正常流量的TMIn和TEGa同时进入反应室生长InGaN，阱磊厚度和为5-20nm，直至InGaN量子阱生长完成。③反复进行步骤①和②，周期数为12，完成InGaN/GaN多量子阱的生长。
(3)在步骤(2)所述多量子阱层上依次生长p型AlGaN层和p型GaN层，完成整个LED的生长。
以上实例仅用于说明而非限制本发明技术方案。任何不脱离本发明范围的技术方案，均应涵盖在本发明专利保护范围之中。

Claims (6)

1.一种InGaN/GaN量子阱界面中断生长结构及方法，采用MOCVD技术，高纯NH3作为氮源，三甲基镓TMGa与三乙基镓TEGa作为镓源，三甲基铟TMIn作为铟源，三甲基铝TMAl作为铝源，硅烷SiH4和二茂镁CP2Mg分别作为n型和p型掺杂剂。该方法包括以下步骤：
(1)在蓝宝石衬底上生长低温GaN成核层、非故意掺杂高温GaN层和n型GaN层；
(2)在所述n型GaN层上采用InGaN/GaN界面中断生长技术生长多量子阱层；
(3)在所述多量子阱层上依次生长p型AlGaN层和p型GaN层。
本方法的特征在于：在InGaN量子阱生长初期，周期性地通入/停止TMIn进入反应室，提高量子阱生长初期In组分，使得InGaN量子阱生长初期In组分与正常生长时In组分一致，减小pulling effect，提高波长均匀性，增加量子阱界面陡峭性，提高发光效率。
2.根据权利要求1所述的一种InGaN/GaN量子阱界面中断生长结构及方法，其特征在于：在InGaN量子阱生长初期，TMIn和TEGa流量与正常生长流量相同，无需进行流量调整，简单实用，可操作性强。
3.根据权利要求1所述的一种InGaN/GaN量子阱界面中断生长结构及方法，其特征在于：在InGaN量子阱生长初期，周期性地通入/停止TMIn进入反应室，通入时间T1与停止时间T2的比值可以从0.1到10，通过调整这个比值提高量子阱生长初期In组分，使得InGaN量子阱生长初期In组分与正常生长时In组分一致。
4.根据权利要求1所述的一种InGaN/GaN量子阱界面中断生长结构及方法，其特征在于：在InGaN量子阱生长初期，周期性地通入/停止TMIn进入反应室的周期数可以从1到50，从而使InGaN量子阱生长初期的厚度与pulling effect的宽度一致。
5.根据权利要求1所述的一种InGaN/GaN量子阱界面中断生长结构及方法，其特征在于：所述LED包括蓝色、绿色、紫外LED等各种GaN基LED。
6.根据权利要求1所述的一种InGaN/GaN量子阱界面中断生长结构及方法，其特征在于：在InGaN量子阱生长初期，周期性地通入/停止TMIn进入反应室的方法，不限于本专利提供的LED结构，在InGaN量子阱生长初期采用TMIn中断式生长的LED结构均属于本专利保护范围。
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CN105428478A (zh) * 2015-11-24 2016-03-23 湘能华磊光电股份有限公司 Led外延片及其制备方法
CN105742434A (zh) * 2016-05-16 2016-07-06 安徽三安光电有限公司 一种氮化物发光二极管及其制备方法

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