CN104820324A - Liquid crystal display component and radiation-sensitive resin composition - Google Patents
Liquid crystal display component and radiation-sensitive resin composition Download PDFInfo
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- CN104820324A CN104820324A CN201510043380.1A CN201510043380A CN104820324A CN 104820324 A CN104820324 A CN 104820324A CN 201510043380 A CN201510043380 A CN 201510043380A CN 104820324 A CN104820324 A CN 104820324A
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/136227—Through-hole connection of the pixel electrode to the active element through an insulation layer
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/10—Metal compounds
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- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L33/00—Compositions of homopolymers or copolymers of compounds having one or more unsaturated aliphatic radicals, each having only one carbon-to-carbon double bond, and only one being terminated by only one carboxyl radical, or of salts, anhydrides, esters, amides, imides or nitriles thereof; Compositions of derivatives of such polymers
- C08L33/04—Homopolymers or copolymers of esters
- C08L33/06—Homopolymers or copolymers of esters of esters containing only carbon, hydrogen and oxygen, which oxygen atoms are present only as part of the carboxyl radical
- C08L33/10—Homopolymers or copolymers of methacrylic acid esters
- C08L33/12—Homopolymers or copolymers of methyl methacrylate
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134363—Electrodes characterised by their geometrical arrangement for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS]
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/1333—Constructional arrangements; Manufacturing methods
- G02F1/1343—Electrodes
- G02F1/134309—Electrodes characterised by their geometrical arrangement
- G02F1/134372—Electrodes characterised by their geometrical arrangement for fringe field switching [FFS] where the common electrode is not patterned
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
- G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
- G02F1/1362—Active matrix addressed cells
- G02F1/1368—Active matrix addressed cells in which the switching element is a three-electrode device
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- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
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Abstract
The invention provides a liquid crystal display component and radiation-sensitive resin compositions used in manufacturing of the liquid crystal display component. The liquid crystal display component is formed by means of making a TFT substrate and an opposite substrate to clamp liquid crystal. The TFT substrate comprises a first insulation film formed by first radiation-sensitive resin compositions, a contact hole, a first electrode connected to a source electrode of a TFT through the contact hole and a second insulation film formed by second radiation-sensitive resin compositions in a mode of filling in the contact hole. A second electrode connected to the first electrode is configured on the second insulation film. A third electrode is arranged on the first electrode and the second electrode via a third insulation film. The liquid crystal display component applies a voltage to the first electrode and the position between the second electrode and the third electrode to drive the liquid crystal. The Liquid crystal display component and radiation-sensitive resin compositions used in manufacturing of the liquid crystal display component can reduce influences of the contact hole so as to raise luminance.
Description
Technical field
The present invention relates to a kind of liquid crystal display cells and radiation-sensitive resin composition.
Background technology
Liquid crystal display cells has the structure clamping liquid crystal between a pair substrate.Electrode can be set on these substrates, being oriented to object and alignment films being set at substrate surface of liquid crystal can be controlled further.And these a pair substrate is such as clamped by a pair Polarizer.And, if apply electric field between this substrate, then drive liquid crystal and produce change in orientation, becoming and make light partially transmission, cover.In liquid crystal display cells, utilize this kind of characteristic and show image.This liquid crystal display cells have with the display device of existing cathode-ray tube (CRT) (Cathode-Ray Tube, CRT) mode Comparatively speaking, realize slimming or light-weighted advantage.
Exploitation liquid crystal display cells is originally used as the display element showing the counter centered by waiting or clock and watch by character (character).Thereafter, made by the exploitation of simple matrix (simple matrix) mode dot matrix show transfiguration easy, therefrom purposes is extended in the display element of notebook computer (note personal computer) etc.Secondly, by there being thin film transistor (TFT) (the Thin Film Transister in order to switch in each pixel arrangement; The exploitation of active matrix mode TFT), becomes the good image quality that can realize contrast ratio or response performance excellence.In addition, liquid crystal display cells also overcomes the problems such as high-precision refinement, colorize and visual angle expansion, start desktop computer display with etc. in use.Recently, achieve wider visual angle, the high-speed response of liquid crystal and the raising etc. of display quality, start the display being used as the portable electronic machines such as large-scale, slim TV display element or the smart mobile phone that needs high density to show.
In liquid crystal display cells, there will be a known the initial orientation state of liquid crystal or the different various liquid crystal modes of change in orientation action.Such as have twisted-nematic (TwistedNematic, TN), supertwist is to row (SuperTwistedNematic, STN), coplanar switching (In-Planes Switching, IPS) (fringing field switches (Fringe Field Switching, FFS)), vertical orientated (Vertical Alignment, or the liquid crystal mode such as optical compensation birefringence (Optically Compensated Birefringence, OCB) VA).
In described liquid crystal mode, IPS pattern and VA pattern have wide visual angle, fast response speed and high contrast ratio, are therefore the liquid crystal modes received publicity especially in recent years.In addition, in this instructions, so-called IPS pattern is following concept: represent as described later, liquid crystal switches the liquid crystal mode of (change in orientation) action in the face of the substrate clamped it, except so-called Transverse electric-field type, also comprise and use tilting electric field (fringing field) and realize the FFS mode of the switching of liquid crystal.
Such as, in the liquid crystal display cells of IPS pattern (hereinafter referred to as " IPS pattern ") comprising FFS mode, the mode roughly become parallel for substrate with liquid crystal phase clamped between a pair substrate controls the initial orientation state of liquid crystal.By to be configured in these substrates one of them on pixel electrode and common electrode between apply voltage, form the electric field (so-called transverse electric field or tilting electric field (fringing field)) of the composition to be parallel to base plan, the state of orientation change of liquid crystal.Therefore, in IPS pattern, the change in orientation of liquid crystal produced owing to applying electric field as its name implies, the spinning movement of the liquid crystal molecule in mainly parallel with base plan face.
Due to this kind of reason, IPS pattern and TN pattern (the parallel-oriented liquid crystal of described TN pattern carries out vertical motion owing to applying electric field) etc. are different, and liquid crystal phase is little for the change at the pitch angle of the substrate of clamping liquid crystal.Therefore, in the liquid crystal display cells of IPS pattern, the change along with the effective value executing alive delay diminishes, and visual angle becomes wide and becomes the image that can show high image quality.
Carry out the exploitation of following structure: in the liquid crystal display cells of IPS pattern as above, clip the inorganic insulating membrane comprising inorganic material, there is in the upper overlap of the electrode (such as common electrode or pixel electrode) of transparent whole planar the structure (such as with reference to patent documentation 1, patent documentation 2 or patent documentation 3) of the electrode (such as pixel electrode or common electrode) of the notch part of slit-shaped.Utilize this electrode structure, the aperture opening ratio of pixel improves, and realizes the image display of high brightness.
And, about the liquid crystal display cells of IPS pattern, in recent years in order to tackle the display of the portable electronic machine such as the TV showing animation or the smart mobile phone needing high density to show, require further higher image quality, particularly high-precision refinement.
In the liquid crystal display cells of IPS pattern, one of them substrate in a pair substrate of clamping liquid crystal configures the active components such as the TFT in order to switch.But also be configured with pixel electrode, common electrode, with the distribution etc. of these Electrode connection, form TFT substrate.Therefore, in the liquid crystal display cells of IPS pattern, configuration member of formation on the tft substrate becomes many, and Comparatively speaking the electrode structure in TFT substrate or other liquid crystal modes such as the configuration structure of distribution and TN pattern complicate.Due to this kind of reason, if want to carry out further high-precision refinement, the area of the pixel electrode so in pixel reduces, and the aperture opening ratio of pixel reduces, thus there is the mystery that display brightness is reduced.
In patent documentation 2, disclose a kind of TFT substrate, it configures the pixel electrode with slit-shaped barbed portion via the interlayer dielectric comprising inorganic material on the common electrode of whole planar.And also reveal that a kind of TFT substrate in patent documentation 3, it configures the common electrode with slit-shaped barbed portion on the pixel electrode of whole planar via inorganic interlayer dielectric.And, in patent documentation 2 and patent documentation 3, disclose the technology that the dielectric film (being also called below " organic insulating film ") comprising organic material is set between the distribution existing for the common electrode of whole planar or the pixel electrode of whole planar and its lower floor.Can expect thus to suppress the coupling capacitance between pixel electrode and distribution to increase, aperture opening ratio is improved.
[prior art document]
[patent documentation]
[patent documentation 1] Japanese Patent Laid-Open 2011-48394 publication
[patent documentation 2] Japanese Patent Laid-Open 2011-59314 publication
[patent documentation 3] Japanese Patent Laid-Open 2012-226249 publication
Summary of the invention
[invention institute for solution problem]
But, described TFT substrate is arranged in the technology of organic insulating film, need to arrange contact hole in order to the source electrode of pixel electrode and TFT is electrically connected.Pixel electrode uses the so-called transparency electrode that visible light transmission is high, usually comprises indium oxide (the Indium Tin Oxide doped with tin; The transparent conductive material such as ITO).And, as described in patent documentation 3, in order to prevent the broken string of pixel electrode, it is desirable to the taper angle of contact hole (taperangle) to be set to less than 45 degree.Organic insulating film has the thickness of about several μm, and the contact hole in TFT substrate becomes to overlook has large area.
In liquid crystal display cells, the uniform initial orientation of liquid crystal when not applying voltage by clamp the substrate of this liquid crystal surface set by alignment films and realize.Such as, alignment films can be implemented process that the cloth such as friction treatment carries out wiping or the light orientation process of irradiating polarized light etc. and carrying out and realize the initial orientation of liquid crystal.
In this case, Comparatively speaking forming section and other parts of the contact hole on aforesaid substrate cave in, and become the part being difficult to carry out friction treatment or light orientation process.Therefore, the forming section of the contact hole of TFT substrate becomes the part easily producing and cause the liquid crystal aligning confusion of light leak.
And in the liquid crystal display cells of IPS pattern, contact hole becomes formation depression on the tft substrate as described above, and this forming section is compared with other parts, the part that the thickness of liquid crystal is thickening.Therefore, the forming section of contact hole becomes compared with other parts, the part that the response characteristic of transmissivity or liquid crystal is different, the part that the homogeneity becoming worry about image display reduces.
Due to this kind of reason, begin one's study in the liquid crystal display cells of IPS pattern, the chopping mechanism part owing to forming contact hole and affected pixel being carried out to shading is set, make it not be used for showing the method for image.But the arranging of this kind of chopping mechanism causes the aperture opening ratio of pixel to reduce, and becomes and makes the transmissivity of liquid crystal display cells reduce.That is in the liquid crystal display cells of IPS pattern, contact hole becomes the main cause hindering light characteristic to improve, and becomes the high-precision refinement hindering further display.
Therefore, in the liquid crystal display cells of IPS pattern, require the impact reducing contact hole set in TFT substrate, light characteristic is improved, the technology of further fine display can be carried out.
In addition, as described in patent documentation 3, in the liquid crystal display cells of VA pattern, be investigated and organic insulating film is set at pixel electrode and between the distribution of its lower floor, make the technology that aperture opening ratio improves.Therefore, in the liquid crystal display cells of the VA pattern of this kind of structure, also require to form contact hole on the tft substrate in the same manner as the liquid crystal display cells of IPS pattern.Therefore, in the liquid crystal display cells of VA pattern, also require the impact reducing contact hole set in TFT substrate, light characteristic is improved, the technology of further fine display can be carried out.
And, further in the liquid crystal display cells of other patterns, also can be applied in pixel electrode and organic insulating film is set between the distribution of its lower floor in the same manner as the liquid crystal display cells of the IPS pattern of described structure, make the technology that aperture opening ratio improves.Therefore, in the liquid crystal display cells of other patterns, also require the impact reducing contact hole set in TFT substrate as described above, light characteristic is improved, the technology of further fine display can be carried out.
The present invention forms in view of problem as above.That is, the object of the present invention is to provide the impact and liquid crystal display cells that brightness is improved that reduce contact hole.
And, the object of the present invention is to provide the radiation-sensitive resin composition used in the manufacture of the impact that reduces contact hole and liquid crystal display cells that brightness is improved.
Other objects of the present invention and advantage can become clear and definite according to following record.
[means of dealing with problems]
1st form of the present invention is a kind of liquid crystal display cells, and it is the liquid crystal display cells of the 1st substrate and the 2nd substrate clamping liquid crystal configured by subtend, wherein:
1st substrate comprises:
TFT、
1st dielectric film, use the 1st radiation-sensitive resin composition and to be arranged on TFT,
Contact hole, be formed at the 1st dielectric film,
1st electrode, be arranged on the 1st dielectric film and on the inwall of contact hole, be electrically connected with TFT via described contact hole,
2nd dielectric film, use the 2nd radiation-sensitive resin composition in the mode of landfill contact hole and arrange and
2nd electrode, is arranged on the 2nd dielectric film, is connected, thus be electrically connected with described 1st electrode by its part with the 1st electrode part on the 1st dielectric film;
With on the 1st electrode that the 3rd electrode is arranged on the 1st substrate via the 3rd dielectric film and the 2nd electrode, or the 3rd electrode is arranged on the liquid crystal side of the 2nd substrate; And
To the 1st electrode and apply voltage between the 2nd electrode and the 3rd electrode and drive the mode of liquid crystal to form.
In the 1st form of the present invention, preferably the 1st radiation-sensitive resin composition is the radiation-sensitive resin composition of eurymeric and the 2nd radiation-sensitive resin composition is the radiation-sensitive resin composition of minus, or the 1st radiation-sensitive resin composition is the radiation-sensitive resin composition of minus and the 2nd radiation-sensitive resin composition is the radiation-sensitive resin composition of eurymeric.
In the 1st form of the present invention, preferably the 1st radiation-sensitive resin composition contains polymkeric substance, and described polymkeric substance comprises the Component units with carboxyl and the Component units with polymerism base.
In the 1st form of the present invention, preferably the 2nd radiation-sensitive resin composition contains polymkeric substance, and described polymkeric substance comprises the Component units with carboxyl and the Component units with polymerism base.
2nd form of the present invention is a kind of radiation-sensitive resin composition, and it is the radiation-sensitive resin composition used in the manufacture of the liquid crystal display cells of the 1st substrate and the 2nd substrate clamping liquid crystal configured by subtend, wherein:
1st substrate of liquid crystal display cells comprises:
TFT、
1st dielectric film, to be arranged on TFT,
Contact hole, be formed at the 1st dielectric film,
1st electrode, be arranged on the 1st dielectric film and on the inwall of contact hole, be electrically connected with TFT via contact hole,
2nd dielectric film, arrange in the mode of landfill contact hole and
2nd electrode, is arranged on the 2nd dielectric film, is connected, thus be electrically connected with described 1st electrode by its part with the 1st electrode part on the 1st dielectric film;
Liquid crystal display cells is with on the 1st electrode that the 3rd electrode is arranged on the 1st substrate via the 3rd dielectric film and the 2nd electrode, or the 3rd electrode to be arranged on the liquid crystal side of the 2nd substrate, and to the 1st electrode and apply voltage between the 2nd electrode and the 3rd electrode and drive the mode of liquid crystal to form;
Described radiation-sensitive resin composition is used for the 2nd dielectric film of formation the 1st substrate.
2nd form of the present invention preferably also comprises metal oxide particle.
[effect of invention]
According to the 1st form of the present invention, the impact and liquid crystal display cells that brightness is improved that reduce contact hole can be obtained.
According to the 2nd form of the present invention, the radiation-sensitive resin composition used in the manufacture of the impact that reduces contact hole and liquid crystal display cells that brightness is improved can be obtained.
Accompanying drawing explanation
Fig. 1 is the sectional view of the structure of the liquid crystal display cells of the IPS pattern schematically showing the 1st example of the present invention.
Fig. 2 is the planimetric map of the structure of the liquid crystal display cells of the IPS pattern schematically showing the 1st example of the present invention.
Fig. 3 is the sectional view of the structure of other examples of the liquid crystal display cells of the IPS pattern schematically showing the 1st example of the present invention.
Fig. 4 is the sectional view of the structure of the liquid crystal display cells of the VA pattern schematically showing the 2nd example of the present invention.
Fig. 5 is the planimetric map of the structure of the liquid crystal display cells of the VA pattern schematically showing the 2nd example of the present invention.
Fig. 6 is the sectional view of the structure of other examples of the liquid crystal display cells of the VA pattern schematically showing the 2nd example of the present invention.
[explanation of symbol]
1,1-2,100,100-2: liquid crystal display cells
2,102:TFT substrate
3,103: subtend substrate
4,104: liquid crystal
5、105：TFT
6,106: the 1 dielectric films
7,107: contact hole
8,108: the 1 electrodes
9,9-2,109, the 109-2: the 2 dielectric film
10,10-2,110, the 110-2: the 2 electrode
11: the 3 dielectric films
12,112: the 3 electrodes
21,121: gate insulating film
22,122: inorganic passivating film
30,130: signal wire
31,131: sweep trace
32,132: semiconductor layer
33,133: drain electrode
34,134: source electrode
40,44,140,144: alignment films
41,141: black matrix"
42,142: colored filter
43,143: planarization film
50: notch part
Embodiment
Below, about example of the present invention, use accompanying drawing and be illustrated aptly.
In addition, in the present invention, " radioactive ray " that irradiate during exposure comprise luminous ray, ultraviolet, far ultraviolet, X ray and charged particle beam etc.
Example 1
The liquid crystal display cells > of <IPS pattern
Fig. 1 is the sectional view of the structure of the liquid crystal display cells of the IPS pattern schematically showing the 1st example of the present invention.
Fig. 2 is the planimetric map of the structure of the liquid crystal display cells of the IPS pattern schematically showing the 1st example of the present invention.
In addition, Fig. 1 schematically shows the section of the A-A ' line along Fig. 2.
As shown in Figure 1, the liquid crystal display cells 1 of the IPS pattern of the 1st example of the present invention configured by subtend the TFT substrate 2 as the 1st substrate, form with clamping liquid crystal 4 as the subtend substrate 3 of the 2nd substrate.Herein, so-called TFT substrate is the substrate of the TFT had as thin film transistor (TFT).As shown in Figure 2, in the liquid crystal display cells 1 of IPS pattern, TFT substrate 2 has TFT 5 and forms.
That is, as shown in Figures 1 and 2, the TFT substrate 2 of liquid crystal display cells 1 comprises: the 1st dielectric film 6, and it is arranged on TFT 5 (not shown in Fig. 1); Contact hole 7, it is formed at the 1st dielectric film 6; 1st electrode 8, it is arranged on the 1st dielectric film 6 and on the inwall of contact hole 7, and is electrically connected with the source electrode 34 of TFT 5 via contact hole 7; 2nd dielectric film 9, it is arranged in the mode of landfill contact hole 7, makes the surface planarisation of TFT substrate 2.
TFT substrate 2 has the 2nd electrode 10 be arranged on the 2nd dielectric film 9.
In TFT substrate 2, the 2nd electrode 10 set on the 2nd dielectric film 9 is also electrically connected with the 1st electrode 8 on the 1st dielectric film 6 by the end as its part.
And in TFT substrate 2, the 2nd electrode 10 set on the 2nd dielectric film 9 also can use it at least partially, connects, be electrically connected thus in the mode of the part covering the 1st electrode 8 on the 1st dielectric film 6.
In the liquid crystal display cells 1 of this example, the 1st electrode 8 and being integrated with the 2nd 10 one-tenth, electrode of its electric connection, forms the pixel electrode of whole planar.
And liquid crystal display cells 1 has the 3rd dielectric film 11 on the 1st electrode 8 and the 2nd electrode 10 of TFT substrate 2, has the 3rd electrode 12 further on the 3rd dielectric film 11.That is, liquid crystal display cells 1 has the 3rd electrode 12 and is arranged on structure on the 1st electrode 8 of TFT substrate 2 and the 2nd electrode 10 via the 3rd dielectric film 11.In the liquid crystal display cells 1 of this example, the 3rd electrode 12 forms common electrode.
By above formation, apply voltage between the 3rd electrode 12 in the 1st electrode 8 in liquid crystal display cells 1 pair of TFT substrate 2 and the 2nd electrode 10 and TFT substrate 2 and drive liquid crystal 4.
Liquid crystal display cells 1 becomes the liquid crystal display cells of IPS pattern.
Below, about the liquid crystal display cells 1 of the IPS pattern of the 1st example of the present invention formation and be illustrated in more detail.First, about the main planar structure of the planar structure of liquid crystal display cells 1, particularly pixel, mainly use Fig. 2 and be illustrated.
In liquid crystal display cells 1, as shown in Figure 2, pixel is formed in the region surrounded by the sweep trace 31 that the signal wire 30 longitudinal direction extending existence and transverse direction extend existence.Sweep trace 31 is formed the TFT 5 in order to switch, and it controls the 1st electrode 8 and the 2nd electrode 10 supplying video signal to forming pixel electrode.As shown in Figure 2, sweep trace 31 is held concurrently as the grid of TFT 5, and sweep trace 31 is formed the semiconductor layer 32 be made up of amorphous silicon (a-Si) or microcrystal silicon.
On semiconductor layer 32, to form the drain electrode 33 be connected with signal wire 30 in the mode of end overlap, to form source electrode 34 with the mode of this drain electrode 33 subtend across gap.Source electrode 34 extends existence in the forming region of pixel, is electrically connected with the 1st electrode 8 via contact hole 7.
As shown in Figure 2, the whole planar of plane is formed as with the 1st electrode 8 represented by dotted line.And, with the 2nd electrode 10 represented by dotted line to cover contact hole 7, and the mode contacted with the 1st electrode 8 in its end and be formed as whole planar.And, on these, the 3rd electrode 12 with the slit-shaped notch part 50 of the non-forming portion becoming electrode is set via the 3rd dielectric film 11 not illustrated in Fig. 2.
In the liquid crystal display cells 1 shown in Fig. 2, the 1st electrode 8 schematically shown with dotted line extends existence from a certain end of TFT 5 and covers source electrode 34 within the pixel.The 2nd dielectric film 9 (not shown in Fig. 2) that the 2nd electrode 10 schematically shown with dotted line is also arranged on landfill contact hole 7 above covers source electrode 34.And the 2nd electrode 10 covers the 1st electrode 8 via the 2nd dielectric film 9 as described above, and be electrically connected as the end of its part and the 1st electrode 8.
And the 3rd electrode 12 with slit-shaped notch part 50 is not only 1 pixel, also can be formed as common electrode with other pixel common lands, apply common voltage (Common voltage).As shown in Figure 1, the notch part 50 the 3rd electrode 12 formed covers source electrode 34 and contact hole 7.
Secondly, about the cross-section structure of the cross-section structure of liquid crystal display cells 1, particularly pixel, the main Fig. 1 that uses is illustrated.
Liquid crystal display cells 1 forms the gate insulating film 21 used in the TFT 5 of Fig. 2 as shown in Figure 1 in TFT substrate 2, is formed thereon and extends from TFT 5 source electrode 34 existed.The source electrode 34 of this part can carry out shading to the light from not shown backlight.Cover source electrode 34 and form inorganic passivating film 22, being formed thereon and hold concurrently as the 1st dielectric film 6 of planarization film.Inorganic passivating film 22 is such as by SiO
2formed Deng the metal nitride such as metal oxide or SiN.
In addition, in the liquid crystal display cells 1 of this example, the 1st dielectric film 6 uses the 1st radiation-sensitive resin composition described later, the organic insulating film formed by patterning.The 1st dielectric film 6 is formed with the thickness of such as 0.5 μm ~ 6 μm.
1st dielectric film 6 is formed the contact hole 7 that the 1st electrode 8 is electrically connected with source electrode 34.The formation method of contact hole 7 is after formation the 1st dielectric film 6, forms through hole.Thereafter, inorganic passivating film 22 also forms through hole, the through hole of the 1st dielectric film 6 is communicated with the through hole of inorganic passivating film 22.Its result, forms the contact hole 7 running through the 1st dielectric film 6 and inorganic passivating film 22 in TFT substrate 2.
In addition, in the example of the liquid crystal display cells 1 shown in Fig. 1, the through hole of the 1st dielectric film 6 can use different masks from the through hole of inorganic passivating film 22 and be formed.And, as additive method, may also be form through hole on the 1st dielectric film 6 after, use the 1st dielectric film 6 as mask, formed the through hole of inorganic passivating film 22 by dry-etching, contact hole 7 is set.
The contact hole 7 being formed at as mentioned above the 1st dielectric film 6 comprises: in order to the lower opening be connected with source electrode 3 by the 1st electrode 8, upper hole that diameter is larger than it, link the inwall in lower opening and upper hole.In order to the broken string of the mode and the 1st electrode 8 arranged that prevent the inwall covering contact hole 7, the taper angle of contact hole 7 is preferably made to be less than 45 degree.Therefore, the contact hole 7 in TFT substrate 2 becomes to overlook has large area.
And, to cover the mode of the 1st dielectric film 6 and contact hole 7, the 1st electrode 8 is set on the 1st dielectric film 6 and on the inwall of contact hole 7.1st electrode 8 such as can use ITO and be formed.In liquid crystal display cells 1, the 1st electrode 8 becoming pixel electrode is formed as the whole planar of plane.1st electrode 8 is electrically connected with source electrode 34 via contact hole 7.
And liquid crystal display cells 1 has the 2nd dielectric film 9 arranged in the mode of landfill contact hole 7.2nd dielectric film 9 is the organic insulating films using the 2nd radiation-sensitive resin composition described later and formed.2nd dielectric film 9 of liquid crystal display cells 1 has the function of the contact hole 7 of landfill TFT substrate 2.And the 2nd dielectric film 9 plays function to make the mode of the surface planarisation of TFT substrate 2.
In addition, as the formation method of the 2nd dielectric film 9, such as, can be used in form contact hole 7 grade the photomask used in the patterning of the 1st dielectric film 6, carrying out patterning and forming the 2nd dielectric film 9.
That is, use a kind of photomask and form the 1st dielectric film 6 with contact hole 7, arranging after its 1st electrode 8 covered, reuse this mask, use the 2nd radiation-sensitive resin composition and form the 2nd dielectric film 9.
In this case, such as, use the 1st radiation-sensitive resin composition of eurymeric, carry out utilizing the patterning of exposure via photomask and development, be formed with the 1st dielectric film 6 of contact hole 7.Secondly, the 1st electrode 8 is formed.Thereafter, use the 2nd radiation-sensitive resin composition of minus, use and carry out same exposure and development with described identical photomask, the 2nd dielectric film 9 of landfill contact hole 7 can be formed.
The TFT substrate 2 of liquid crystal display cells 1 has the 2nd electrode 10, and described 2nd electrode 10 is arranged on the 2nd dielectric film 9, is electrically connected with the 1st electrode 8 on the 1st dielectric film 6 by the end as its part.2nd electrode 10 can use the material same with the 1st electrode 8 and be formed, such as, can use ITO and be formed.
In the liquid crystal display cells 1 of this example, the 1st electrode 8 and the 2nd electrode 10 are mutually electrically connected to form and are integrated, and can be used as the pixel electrode of whole planar and play function.
And liquid crystal display cells 1 has the 3rd dielectric film 11 becoming interlayer dielectric on the 1st electrode 8 and the 2nd electrode 10 of TFT substrate 2.3rd dielectric film 11 such as can be set to by SiO
2the inorganic insulating membrane formed Deng the metal nitride such as metal oxide or SiN.
And liquid crystal display cells 1 has the 3rd electrode 12 on the 3rd dielectric film 11, described 3rd electrode 12 has the slit-shaped notch part 50 becoming and do not form electrode part.3rd electrode 12 and notch part 50 thereof are formed in the upper strata of contact hole 7 in the mode covering contact hole 7.3rd electrode 12 can be used as common electrode and plays function in liquid crystal display cells 1.
3rd electrode 12 is formed the alignment films 40 making liquid crystal 4 orientation.Alignment films 40 can be implemented to utilize the orientation process of friction treatment and realize the initial orientation of the uniform liquid crystal 4 when not applying voltage, parallel with the substrate surface of TFT substrate 2 parallel-oriented.
Liquid crystal display cells 1 has the subtend substrate 3 as the 2nd substrate clamping liquid crystal 4.Subtend substrate 3 is formed black matrix" 41, colored filter 42, covers these and be formed with planarization film 43, be formed with alignment films 44 thereon.Alignment films 44 on subtend substrate 3 is identical with the alignment films 40 in TFT substrate 2, can implement to utilize the orientation process of friction treatment and realize parallel-oriented as initial orientation of liquid crystal 4.
Have in the liquid crystal display cells 1 of this example of above formation, in order to show image, vision signal is applied to the 1st electrode 8 in TFT substrate 2 and the 2nd electrode 10, if apply voltage between these and the 3rd electrode 12, then generation tilting electric field around these.That is, by applying voltage at the 1st electrode 8 and between the 2nd electrode 10 and the 3rd electrode 12, in liquid crystal 4, the tilting electric field with the composition parallel with the real estate of TFT substrate 2 is produced via the notch part 50 of the 3rd electrode 12.
Its result, liquid crystal 4 is driven by the composition parallel with real estate of this tilting electric field, carries out spinning movement from the state of initial orientation in the plane parallel with real estate.
Liquid crystal display cells 1 has and has not shown Polarizer respectively in the face of the face of the anti-liquid crystal side of TFT substrate 2 and the anti-liquid crystal side of subtend substrate 3, by the structure of a pair Polarizer clamping liquid crystal 4.Therefore, liquid crystal display cells 1 utilizes the spinning movement of the liquid crystal 4 caused by described tilting electric field and can make light partially transmission, covers, and can utilize this kind of characteristic and show image.
And in liquid crystal display cells 1, contact hole 7 set in TFT substrate 2 is by the 2nd dielectric film 9 landfill, and the surface of TFT substrate 2 obtains planarization.Therefore, in liquid crystal display cells 1, following phenomenon is reduced: the reduction of the response characteristic of the orientation of the liquid crystal 4 caused by contact hole 7 transmissivity that is chaotic, that cause by caving in and liquid crystal 4.That is liquid crystal display cells 1 can reduce the impact of contact hole 7 set in TFT substrate 2, without the need to forming chopping mechanism such as source electrode 34 grade significantly, and light characteristic can be made to improve.
In addition, the contact hole 7 of the liquid crystal display cells 1 of the 1st example of the present invention is by the 2nd dielectric film 9 landfill, and as shown in Figure 1, the surface of TFT substrate 2 obtains planarization.But, in the liquid crystal display cells 1 of this example, also can according to the formation method of the selection of the composition of the 2nd radiation-sensitive resin composition of formation the 2nd dielectric film 9 or the 2nd dielectric film 9, some upper faces (surface of liquid crystal 4 side) hollowly forming the 2nd dielectric film 9.
Fig. 3 is the sectional view of the structure of other examples of the liquid crystal display cells of the IPS pattern schematically showing the 1st example of the present invention.
In addition, as the liquid crystal display cells 1-2 of the IPS pattern of other examples of the 1st example of the present invention shown in Fig. 3 except the shape difference of the 2nd dielectric film 9-2, there is the structure that liquid crystal display cells 1 shown in waiting with Fig. 1 is same.Therefore, about the composed component shared, prosign is accompanied by and the repetitive description thereof will be omitted.
In the liquid crystal display cells 1-2 of the IPS pattern of other examples as the 1st example of the present invention, some hollowly formation is provided with the upper face (surface of liquid crystal 4 side) of the 2nd dielectric film 9-2 of the 2nd electrode 10-2.Wherein, in liquid crystal display cells 1-2, contact hole 7 set in TFT substrate 2 is by the 2nd dielectric film 9-2 landfill, and Comparatively speaking the surface of TFT substrate 2 obtains planarization with the situation not arranging the 2nd dielectric film 9-2.Therefore, in liquid crystal display cells 1-2, and do not arrange the situation of the 2nd dielectric film 9-2 Comparatively speaking, the orientation reducing the liquid crystal 4 caused by contact hole 7 is chaotic, and the response characteristic relaxing transmissivity and the liquid crystal 4 caused by caving in reduces.That is liquid crystal display cells 1-2 can reduce the impact of the contact hole 7 that TFT substrate 2 is arranged, and without the need to forming chopping mechanism such as source electrode 34 grade significantly, light characteristic can be made to improve.
Example 2
The liquid crystal display cells > of <VA pattern
Fig. 4 is the sectional view of the structure of the liquid crystal display cells of the VA pattern schematically showing the 2nd example of the present invention.
Fig. 5 is the planimetric map of the structure of the liquid crystal display cells of the VA pattern schematically showing the 2nd example of the present invention.
In addition, Fig. 4 schematically shows the section of the B-B ' line along Fig. 5.
As shown in Figure 4, the liquid crystal display cells 100 of the VA pattern of the 2nd example of the present invention configured by subtend the TFT substrate 102 as the 1st substrate, form with clamping liquid crystal 104 as the subtend substrate 103 of the 2nd substrate.Liquid crystal 104 is the liquid crystal with negative dielectric anisotropy (Δ ε).
And as shown in Figure 5, in the liquid crystal display cells 100 of VA pattern, TFT substrate 102 has TFT 105.
That is, as shown in Figures 4 and 5, the TFT substrate 102 of liquid crystal display cells 100 comprises: the 1st dielectric film 106, is arranged on TFT 105 (not shown in Fig. 4); Contact hole 107, is formed on the 1st dielectric film 106; 1st electrode 108, is arranged on the 1st dielectric film 106 and on the inwall of contact hole 107, is electrically connected via contact hole 107 with the source electrode 134 of TFT 105; 2nd dielectric film 109, arranges in the mode of landfill contact hole 107, makes the surface planarisation of TFT substrate 102.
And TFT substrate 102 has the 2nd electrode 110, described 2nd electrode 110 is arranged on the 2nd dielectric film 109, is electrically connected with the 1st electrode 108 on the 1st dielectric film 106 by the end as its part.
In the liquid crystal display cells 100 of this example, the 1st electrode 108 and be integrated with the 2nd 110 one-tenth, electrode of its electric connection and form pixel electrode.
And liquid crystal display cells 100 has the 3rd electrode 112 in liquid crystal 104 side of subtend substrate 103.In the liquid crystal display cells 100 of this example, the 3rd electrode 112 forms common electrode.
Its result, liquid crystal display cells 100 is to drive the mode of liquid crystal 104 to applying voltage between the 3rd electrode 112 on the 1st electrode 108 in TFT substrate 102 and the 2nd electrode 110 and subtend substrate 103 and to be formed.Liquid crystal display cells 100, to drive the mode of the liquid crystal 104 with negative dielectric anisotropy to applying voltage between the 3rd electrode 112 on the 1st electrode 108 and the 2nd electrode 110 and subtend substrate 103 and to be formed, forms the liquid crystal display cells of VA pattern.
Below, about the liquid crystal display cells 100 of the VA pattern of the 2nd example of the present invention formation and be described in more detail.First, about the main planar structure of the planar structure of liquid crystal display cells 100, particularly pixel, mainly use Fig. 5 and be illustrated.
In liquid crystal display cells 100, as shown in Figure 5, pixel is formed in the region surrounded by the sweep trace 131 that the signal wire 130 longitudinal direction extending existence and transverse direction extend existence.Sweep trace 131 is formed the TFT 105 in order to switch, and it controls the 1st electrode 108 and the 2nd electrode 110 supplying video signal to forming pixel electrode.As shown in Figure 5, sweep trace 131 is held concurrently as the grid of TFT 105, and sweep trace 131 is formed the semiconductor layer 132 be made up of amorphous silicon (a-Si) or microcrystal silicon.
On semiconductor layer 132, to form the drain electrode 133 be connected with signal wire 130 in the mode of end overlap, to form source electrode 134 with the mode of this drain electrode 133 subtend across gap.Source electrode 134 extends existence in the forming region of pixel, is electrically connected with the 1st electrode 108 via contact hole 107.
As shown in Figure 5, the 1st electrode 108 is formed as the whole planar of plane.And the 2nd electrode 110 is to cover contact hole 107, and the mode contacted with the 1st electrode 108 in its end and be formed as whole planar.
In addition, the 1st electrode 108 and the 2nd electrode 110 become be integrated and form pixel electrode as described above, but in the example shown in Fig. 5, are formed as whole planar respectively.Wherein, in liquid crystal display cells 100, as other example, the 1st electrode 108 and the 2nd electrode 110 can have the slit-shaped notch part becoming and do not form electrode part respectively.In this case, after forming the 1st electrode 108 and the 2nd electrode 110 as illustrated in fig. 5, these blanket are carried out patterning, notch part can be set at the 1st electrode 108 and the 2nd electrode 110.
1st electrode 108 and the 2nd electrode 110 have notch part, therefore when liquid crystal display cells 100 applies voltage between to the 3rd electrode 112 on the 1st electrode 108 and the 2nd electrode 110 and subtend substrate 103, the electric field vertical with real estate can be produced and become the electric field of some inclinations, the vergence direction of liquid crystal 104 can be controlled.
In the liquid crystal display cells 100 shown in Fig. 5, the 1st electrode 108 extends existence from a certain end of TFT 105 and covers source electrode 134 within the pixel.The 2nd dielectric film 109 (not shown in Fig. 5) that 2nd electrode 110 is also arranged on landfill contact hole 107 above covers source electrode 134.And the 2nd electrode 110 covers the 1st electrode 108 via the 2nd dielectric film 109 as described above, and is electrically connected with the 1st electrode 108 by the end as its part.
Secondly, about the cross-section structure of the cross-section structure of liquid crystal display cells 100, particularly pixel, the main Fig. 4 that uses is illustrated.
Liquid crystal display cells 100 as shown in Figure 4, TFT substrate 102 forms the gate insulating film 121 used in the TFT 105 of Fig. 5, is formed thereon and extends from TFT 105 source electrode 134 existed.The source electrode 134 of this part can carry out shading to the light from not shown backlight.Cover source electrode 134 and form inorganic passivating film 122, being formed thereon and hold concurrently as the 1st dielectric film 106 of planarization film.Inorganic passivating film 122 such as can by SiO
2formed Deng the metal nitride such as metal oxide or SiN.
In addition, in the liquid crystal display cells 100 of this example, the 1st dielectric film 106 uses the 1st radiation-sensitive resin composition described later, the organic insulating film formed by patterning.Can such as 0.5 μm ~ thickness of 6 μm and form the 1st dielectric film 106.
1st dielectric film 106 is formed the contact hole 107 that the 1st electrode 108 is electrically connected with source electrode 134.The formation method of contact hole 107 can be identical with the formation method of the contact hole 7 of the liquid crystal display cells 1 of described 1st example.
The contact hole 107 being formed at the 1st dielectric film 106 comprises: in order to the lower opening be connected with source electrode 103 by the 1st electrode 108, upper hole that diameter is larger than it, link the inwall in lower opening and upper hole.In order to the broken string of the mode and the 1st electrode 108 arranged that prevent the inwall covering contact hole 107, the taper angle of contact hole 107 is preferably made to be less than 45 degree.Therefore, the contact hole 107 in TFT substrate 102 becomes to overlook has large area.
And, to cover the mode of the 1st dielectric film 106 and contact hole 107, the 1st electrode 108 is set on the 1st dielectric film 106 and on the inwall of contact hole 107.1st electrode 108 such as can use ITO and be formed.In liquid crystal display cells 100, the 1st electrode 108 becoming pixel electrode is formed as described above as the whole planar of such as plane.1st electrode 108 is electrically connected with source electrode 134 via contact hole 107.
And liquid crystal display cells 100 has the 2nd dielectric film 109 arranged in the mode of landfill contact hole 107.2nd dielectric film 109 is the organic insulating films using the 2nd radiation-sensitive resin composition described later and formed.2nd dielectric film 109 of liquid crystal display cells 100 has the contact hole 107 of landfill TFT substrate 102, makes the function of the surface planarisation of TFT substrate 102.
In addition, the formation method of the 2nd dielectric film 109 can be identical with the formation method of the 2nd dielectric film 9 of the liquid crystal display cells 1 of described 1st example.
Therefore, such as, in order to form contact hole 107 etc., the photomask used in the patterning of the 1st dielectric film 106 can be used in, carry out patterning and forming the 2nd dielectric film 109.
That is, a kind of photomask can be used and form the 1st dielectric film 106 with contact hole 107, arranging after its 1st electrode 108 covered, reuse this mask, use the 2nd radiation-sensitive resin composition and form the 2nd dielectric film 109.
In this case, such as, use the 1st radiation-sensitive resin composition of eurymeric, carry out the patterning developed with utilization via the exposure of photomask, be formed with the 1st dielectric film 106 of contact hole 107.Secondly, the 1st electrode 108 is formed.Thereafter, use the 2nd radiation-sensitive resin composition of minus, use and carry out same exposure and development with described identical photomask, the 2nd dielectric film 109 of landfill contact hole 107 can be formed.
And the TFT substrate 102 of liquid crystal display cells 1 has the 2nd electrode 110, described 2nd electrode 110 is arranged on the 2nd dielectric film 109, is electrically connected with the 1st electrode 108 on the 1st dielectric film 106 by the end as its part.2nd electrode 110 can use the material same with the 1st electrode 109 and be formed, such as, can use ITO and be formed.
In the liquid crystal display cells 100 of this example, the 1st electrode 108 and the 2nd electrode 110 are mutually electrically connected to form and are integrated, and can be used as pixel electrode and play function.
1st electrode 108 and the 2nd electrode 110 form the alignment films 140 making liquid crystal 104 orientation.Alignment films 140 is alignment films of vertical orientating type.Alignment films 140 implements suitable orientation process such as such as friction treatment or light orientation process etc., can realize the uniform initial orientation of the liquid crystal 104 when not applying voltage.That is, liquid crystal 104 not completely vertically orientation for real estate, the liquid crystal 104 of substrate interface has little tilt angle, can realize the initial orientation of substantially vertical orientation equably.
In addition, in the liquid crystal display cells 100 of this example, alignment films 144 on alignment films 140 and subtend substrate 103 described later is not set, or be provided with these alignment films 140, alignment films 144, then in liquid crystal 104, be mixed into the monomer of optical polymerism and make its photopolymerization, the initial orientation of described liquid crystal 104 can be realized thus.
Liquid crystal display cells 100 has the subtend substrate 103 as the 2nd substrate clamping liquid crystal 104.Subtend substrate 103 is formed black matrix" 141, colored filter 142, covers these and be formed with planarization film 143, be provided with the 3rd electrode 112 thereon, be formed with alignment films 144 thereon further.
Alignment films 144 on subtend substrate 103 is identical with the alignment films 140 in TFT substrate 102, implements suitable orientation process and is set to the initial orientation of liquid crystal 104, can realize substantially vertical orientation.
Liquid crystal display cells 100 has the 3rd electrode 112 on subtend substrate 103.And as described above in the liquid crystal display cells 100 of this example, the 3rd electrode 112 forms the common electrode shared with other pixels.
In the liquid crystal display cells 100 of this example with above formation, in order to show image, vision signal is applied to the 1st electrode 108 in TFT substrate 102 and the 2nd electrode 110, if apply voltage between the 3rd electrode 112 on these and subtend substrate 103, then between these, produce electric field.That is, by applying voltage at the 1st electrode 108 and between the 2nd electrode 110 and the 3rd electrode 112, and the electric field vertical with the real estate of TFT substrate 112 is produced in liquid crystal 104.
Its result, the liquid crystal 104 with negative dielectric anisotropy, by this electric field driven, using from the state as the substantially vertical orientation of initial orientation, is oriented to the mode in the direction parallel with real estate and carries out tilting action.
Liquid crystal display cells 100 has and has not shown Polarizer respectively in the face of the face of the anti-liquid crystal side of TFT substrate 102 and the anti-liquid crystal side of subtend substrate 103, is clamped the structure of liquid crystal 104 by a pair Polarizer.Therefore, liquid crystal display cells 100 can make the partial transmission of light owing to utilizing the change in orientation of the liquid crystal 104 of described vertical electric field, cover, and can utilize this kind of characteristic and show image.
And in liquid crystal display cells 100, contact hole 107 set in TFT substrate 102 is by the 2nd dielectric film 109 landfill, and the surface of TFT substrate 102 obtains planarization.Therefore, in liquid crystal display cells 100, following phenomenon is reduced: the reduction of the response characteristic of the orientation of the liquid crystal 104 caused by contact hole 107 transmissivity that is chaotic or that cause by caving in and liquid crystal 104.That is liquid crystal display cells 100 can reduce the impact of contact hole 107 set in TFT substrate 102, without the need to forming the chopping mechanism of source electrode 134 grade significantly, light characteristic can be made to improve.
In addition, in the liquid crystal display cells 100 of the 2nd example of the present invention shown in waiting at Fig. 4, contact hole 107 is by the 2nd dielectric film 109 landfill.And the surface elevation of TFT substrate 102 obtains planarization equably.And, in the liquid crystal display cells 100 of this example, also can according to the formation method of the selection of the composition of the 2nd radiation-sensitive resin composition of formation the 2nd dielectric film 109 or the 2nd dielectric film 109, some upper faces (surface of liquid crystal 104 side) hollowly forming the 2nd dielectric film 109.
Fig. 6 is the sectional view of the structure of other examples of the liquid crystal display cells of the VA pattern schematically showing the 2nd example of the present invention.
In addition, as the liquid crystal display cells 100-2 of the VA pattern of other examples of the 2nd example of the present invention represented in Fig. 6 except the shape difference of the 2nd dielectric film 109-2, there is the structure that liquid crystal display cells 100 shown in waiting with Fig. 4 is same.Therefore, about the composed component shared, prosign is accompanied by and the repetitive description thereof will be omitted.
In the liquid crystal display cells 100-2 of the VA pattern of other examples as the 2nd example of the present invention, some hollowly formation is provided with the upper face (surface of liquid crystal 104 side) of the 2nd dielectric film 109-2 of the 2nd electrode 110-2.Wherein, in liquid crystal display cells 100-2, contact hole 7 set in TFT substrate 102 is by the 2nd dielectric film 109-2 landfill, and Comparatively speaking the surface of TFT substrate 102 obtains planarization with the situation not arranging the 2nd dielectric film 109-2.Therefore, in liquid crystal display cells 100-2, and do not arrange the situation of the 2nd dielectric film 109-2 Comparatively speaking, the orientation reducing the liquid crystal 104 caused by contact hole 107 is chaotic, and the response characteristic relaxing transmissivity and the liquid crystal 104 caused by caving in reduces.That is liquid crystal display cells 100-2 can reduce the impact of contact hole 107 set in TFT substrate 102, without the need to forming chopping mechanism such as source electrode 134 grade significantly, light characteristic can be made to improve.
About in the liquid crystal display cells of the 1st example of the present invention and the 2nd example, be illustrated in more detail in order to the 1st radiation-sensitive resin composition that forms the 1st dielectric film and the 2nd radiation-sensitive resin composition of contact hole that has in order to landfill the 1st dielectric film.
Example 3
< the 1st radiation-sensitive resin composition >
1st radiation-sensitive resin composition of the 3rd example of the present invention can use aptly in the formation of the 1st dielectric film of the liquid crystal display cells of the 1st example of the present invention and the 2nd example.The 1st radiation-sensitive resin composition alternative of this example has the arbitrary radioactivity-sensitive of eurymeric and minus.
No matter 1st radiation-sensitive resin composition of this example is eurymeric or minus is all essential component with alkali soluble resin, when Positively radiation-sensitive resin composition, containing light acid producing agent as essential component, when negative radiation-sensitive resin composition, containing polymerizable compound and radioactivity-sensitive polymerization initiator.
If described alkali soluble resin comprises the polymkeric substance of the Component units with carboxyl and the Component units with polymerism base, be preferably acrylic resin, polysiloxane, polybenzoxazole, make polyamic acid dehydration closed-loop carry out the polyimide resin, novolac resin, cyclic olefine resin etc. of imidizate and gained.
And; in the Component units of alkali soluble resin, preferably comprise the heat cross-linking bases such as epoxy radicals, oxetanylmethoxy, (methyl) acryloyl group, also and additionally can comprise alkali soluble resin the resin of the heat cross-linking bases such as epoxy radicals, oxetanylmethoxy, (methyl) acryloyl group and use.
By the resin using this kind to comprise heat cross-linking base, the thermotolerance of the dielectric film of gained, solvent resistance can be made to improve.
And, as the acid producing agent used in the 1st radiation-sensitive resin composition of eurymeric, quinone di-azido compound or oxime sulfonate compound, salt, sulfone acid imide (sulfone imide) compound, compound, diazomethane compound, sulphones, sulfonate compound and carbonate etc. containing halogen can be enumerated.Particularly preferably quinone di-azido compound or oxime sulfonate compound, salt and sulfone imide compound in these.
And, as the polymerizable compound used in the 1st radiation-sensitive resin composition of minus, include, for example ω-carboxy-polycaprolactone list (methyl) acrylate, ethylene glycol (methyl) acrylate, 1,6-hexanediol two (methyl) acrylate, 1,9-nonanediol two (methyl) acrylate, TEG two (methyl) acrylate, polyglycol two (methyl) acrylate, polypropylene glycol two (methyl) acrylate, two phenoxetol fluorenes two (methyl) acrylate, dihydroxymethyl tristane two (methyl) acrylate, methacrylic acid-2-hydroxyl-3-(methyl) acryloxy propyl ester, (methyl) acrylic acid-2-(2 '-vinyloxyethoxy) ethyl ester, trimethylolpropane tris (methyl) acrylate, pentaerythrite three (methyl) acrylate, pentaerythrite four (methyl) acrylate, dipentaerythritol five (methyl) acrylate, dipentaerythritol six (methyl) acrylate, tricresyl phosphate (2-(methyl) acryloyl-oxyethyl) ester, oxirane upgrading dipentaerythritol acrylate, succinic acid upgrading pentaerythritol triacrylate etc., and make to have straight-chain alkyl-sub-and ester ring type structure and the compound with isocyanates (isocyanate) base of more than 2 with there is in molecule more than 1 hydroxyl and the compound with 3 ~ 5 (methyl) acryloxies reacts and (methyl) propenoic methyl carbamate compound etc. of gained.
And, as the radioactivity-sensitive polymerization initiator used in the 1st radiation-sensitive resin composition of minus, include, for example O-acyl group oxime compound, acetophenone compound, united imidazole etc.These compounds can be used alone, and also two or more mixing can be used.
Particularly preferably O-acyl group oxime compound in these radioactivity-sensitive polymerization initiators, specifically be preferably 1, 2-octadione-1-[4-(phenylsulfartyl)-2-(O-benzoyl oxime)], ethyl ketone-1-[9-ethyl-6-(2-methyl benzoyl)-9H-carbazole-3-base]-1-(O-acetyl oxime), ethyl ketone-1-[9-ethyl-6-(2-methyl-4-tetrahydrofuran base methoxybenzoyl base)-9.H.-carbazole-3-base]-1-(O-acetyl oxime) or ethyl ketone-1-[9-ethyl-6-{2-methyl-4-(2, 2-dimethyl-1, 3-dioxolane base) methoxybenzoyl base }-9.H.-carbazole-3-base 1-1-(O-acetyl oxime).
1st radiation-sensitive resin composition of this example can oxide particle optionally and containing metal.Wrap metallic oxide particle as described above, can improve film physical property such as the refractive index of the cured film of gained, specific inductive capacity.
Described metal oxide particle can enumerate the oxide particle of at least one metal being selected from the group be made up of aluminium, zirconium, titanium, zinc, indium, tin, antimony and cerium, wherein the oxide particle of preferred zirconium, titanium or zinc, more preferably zirconium or titanyl compound particle.In addition, in addition to these, or also titanate can be used to replace these metal oxide particles.
These metal oxide particles can be used alone a kind or two or more can be combinationally used.And described metal oxide particle can be the composite oxide particle of described illustration metal.This composite oxide particle include, for example antimony tin (Antimony-Tin Oxide, ATO), ITO, indium zinc oxide (Indium-Zinc Oxide, IZO) etc.These metal oxide particles can use commercially available.The nano that uncommon love such as can be used to change into incorporated company (C.I.Kasei CO., LTD.) reaches gram (Nanotec) etc.
Example 4
< the 2nd radiation-sensitive resin composition >
2nd radiation-sensitive resin composition of the 4th example of the present invention can suitablely in the formation of the 2nd dielectric film of the liquid crystal display cells of the 1st example of the present invention and the 2nd example use.The 2nd radiation-sensitive resin composition also alternative arbitrary radioactivity-sensitive with eurymeric and minus of this example.
And, in order to form the 1st dielectric film of liquid crystal display cells of the present invention, when the 1st radiation-sensitive resin composition of described 3rd example of the present invention selects the radiation-sensitive resin composition of eurymeric, the 2nd radiation-sensitive resin composition alternative of this example has the radioactivity-sensitive of minus.By carrying out as described above, can in the manufacture of liquid crystal display cells of the present invention, use same photomask as described above and realize the formation of the 1st dielectric film and the 2nd dielectric film.
No matter 2nd radiation-sensitive resin composition of this example is eurymeric or minus in the same manner as the 1st radiation-sensitive resin composition of described 3rd example of the present invention is all essential component with alkali soluble resin.And, when the 2nd radiation-sensitive resin composition is Positively radiation-sensitive resin composition, containing light acid producing agent as essential component, when negative radiation-sensitive resin composition, containing polymerizable compound and radioactivity-sensitive polymerization initiator.
If described alkali soluble resin comprises the polymkeric substance of the Component units with carboxyl and the Component units with polymerism base, be preferably acrylic resin, polysiloxane, polybenzoxazole, make polyamic acid dehydration closed-loop carry out the polyimide resin, novolac resin, cyclic olefine resin etc. of imidizate and gained.
And; in the Component units of alkali soluble resin, preferably comprise the heat cross-linking bases such as epoxy radicals, oxetanylmethoxy, (methyl) acryloyl group, also and additionally can comprise alkali soluble resin the resin of the heat cross-linking bases such as epoxy radicals, oxetanylmethoxy, (methyl) acryloyl group and use.
By the resin using this kind to comprise heat cross-linking base, the thermotolerance of the dielectric film of gained, solvent resistance can be made to improve.
And, as the acid producing agent used in the 2nd radiation-sensitive resin composition of eurymeric, quinone di-azido compound or oxime sulfonate compound, salt, sulfone imide compound, compound, diazomethane compound, sulphones, sulfonate compound, carbonate etc. containing halogen can be enumerated.Particularly preferably quinone di-azido compound or oxime sulfonate compound, salt and sulfone imide compound in these.
And, as the polymerizable compound used in the 2nd radiation-sensitive resin composition of minus, include, for example ω-carboxy-polycaprolactone list (methyl) acrylate, ethylene glycol (methyl) acrylate, 1,6-hexanediol two (methyl) acrylate, 1,9-nonanediol two (methyl) acrylate, TEG two (methyl) acrylate, polyglycol two (methyl) acrylate, polypropylene glycol two (methyl) acrylate, two phenoxetol fluorenes two (methyl) acrylate, dihydroxymethyl tristane two (methyl) acrylate, methacrylic acid-2-hydroxyl-3-(methyl) acryloxy propyl ester, (methyl) acrylic acid-2-(2 '-vinyloxyethoxy) ethyl ester, trimethylolpropane tris (methyl) acrylate, pentaerythrite three (methyl) acrylate, pentaerythrite four (methyl) acrylate, dipentaerythritol five (methyl) acrylate, dipentaerythritol six (methyl) acrylate, tricresyl phosphate (2-(methyl) acryloyl-oxyethyl) ester, oxirane upgrading dipentaerythritol acrylate, succinic acid upgrading pentaerythritol triacrylate etc., and make to have straight-chain alkyl-sub-and ester ring type structure and the compound with more than 2 isocyanate group with there is in molecule more than 1 hydroxyl and the compound with 3 ~ 5 (methyl) acryloxies reacts and (methyl) propenoic methyl carbamate compound etc. of gained.
And, as the radioactivity-sensitive polymerization initiator used in the 2nd radiation-sensitive resin composition of minus, include, for example O-acyl group oxime compound, acetophenone compound, united imidazole etc.These compounds can be used alone, and also two or more mixing can be used.
Particularly preferably O-acyl group oxime compound in these radioactivity-sensitive polymerization initiators, specifically be preferably 1, 2-octadione-1-[4-(phenylsulfartyl)-2-(O-benzoyl oxime)], ethyl ketone-1-[9-ethyl-6-(2-methyl benzoyl)-9H-carbazole-3-base]-1-(O-acetyl oxime), ethyl ketone-1-[9-ethyl-6-(2-methyl-4-tetrahydrofuran base methoxybenzoyl base)-9.H.-carbazole-3-base]-1-(O-acetyl oxime) or ethyl ketone-1-[9-ethyl-6-{2-methyl-4-(2, 2-dimethyl-1, 3-dioxolane base) methoxybenzoyl base }-9.H.-carbazole-3-base]-1-(O-acetyl oxime).
2nd radiation-sensitive resin composition of this example can oxide particle optionally and containing metal.Wrap metallic oxide particle as described above, can improve film physical property such as the refractive index of the cured film of gained, specific inductive capacity.
Described metal oxide particle can enumerate the oxide particle of at least one metal being selected from the group be made up of aluminium, zirconium, titanium, zinc, indium, tin, antimony and cerium, wherein the oxide particle of preferred zirconium, titanium or zinc, more preferably zirconium or titanyl compound particle.In addition, in addition to these, or also titanate can be used to replace these metal oxide particles.The preferred barium titanate of titanate etc.
These metal oxide particles can be used alone a kind or two or more can be combinationally used.And described metal oxide particle can be the composite oxide particle of described illustration metal.This composite oxide particle include, for example antimony tin (Antimony-Tin Oxide, ATO), ITO, indium zinc oxide (Indium-Zinc Oxide, IZO) etc.These metal oxide particles can use commercially available.Uncommon love such as can be used to change into the Nanotec etc. of incorporated company (C.I.Kasei CO., LTD.).
[embodiment]
Below, based on embodiment, example of the present invention is described in detail, but and be can't help this embodiment and the present invention is restrictively explained.
Embodiment 1
[synthesis of alkali soluble resin (A-I)]
2 are loaded, two (2,4-methyl pentane nitrile) 8 mass parts of 2 '-azo and diethylene glycol methyl ethyl ether 220 mass parts in the flask with condenser pipe and stirring machine.Then, load methacrylic acid 15 mass parts, methacrylic acid-3,4-expoxycyclohexyl methyl esters 45 mass parts, methyl methacrylate 20 mass parts, styrene 5 mass parts, N-N-cyclohexylmaleimide 15 mass parts, after carrying out nitrogen displacement, gently stir, and make the temperature of solution rise to 70 DEG C, this temperature kept 5 hours and be polymerized, obtaining the solution containing multipolymer (A-I) by this.The solid component concentration of the polymer solution of gained is 31.9 quality %, and the Mw of multipolymer (A-I) is 10000, and molecular weight distribution (Mw/Mn) is 2.1.In addition, so-called solid component concentration is the ratio representing that copolymer quality is shared in the gross mass of polymer solution.
Embodiment 2
[synthesis of alkali soluble resin (A-II)]
Propylene glycol monomethyl ether 144 mass parts is entered at the container content with stirring machine, then load methyltrimethoxy silane 13 mass parts and 3-methacryloxypropyl 5 mass parts, phenyltrimethoxysila,e 6 mass parts, carry out heating until solution temperature becomes 60 DEG C.After solution temperature reaches 60 DEG C, load ion exchange water 7 mass parts, be heated to 75 DEG C, keep 3 hours.Secondly, add original acid A ester 25 mass parts as dewatering agent and carry out stirring for 1 hour.Make solution temperature become 40 DEG C further, one side keeps this temperature one side to evaporate, alcohol removing water and hydrolytic condensation produced therefrom.The siloxane polymer obtained as (A-II) composition according to above step.The number average molecular weight (Mn) of the hydrolytic condensate of gained is 2500, and molecular weight distribution (Mw/Mn) is 2.
Embodiment 3
[preparation of the 1st radiation-sensitive resin composition of eurymeric]
Prepare containing the solution of alkali soluble resin (A-I) as alkali soluble resin using the amount being equivalent to polymkeric substance 100 mass parts (solid constituent), secondly 4 of the quinone di-azido compound as light acid producing agent are mixed, 4 '-[1-[4-[1-[4-hydroxy phenyl]-1-Methylethyl] phenyl] ethylidene] bis-phenol (1.0 moles) 30 mass parts, the mode becoming 30 quality % with solid component concentration further adds diethylene glycol ethyl methyl ether and after making each component dissolves, filter with the membrane filter that aperture is 0.2 μm, preparation has the 1st radiation-sensitive resin composition of the radioactivity-sensitive of eurymeric.
Embodiment 4
[preparation of the 2nd radiation-sensitive resin composition of minus]
Prepare containing the solution of alkali soluble resin (A-II) as alkali soluble resin using the amount being equivalent to polymkeric substance 100 mass parts (solid constituent), secondly mixing is as the Dipentaerythritol Pentaacrylate of polymerizable compound and potpourri (Ka Yala get (KAYARAD) (registered trademark) DPHA (above Japanese chemical drug company)) 100 mass parts of dipentaerythritol acrylate, and as ethyl ketone-1-[9-ethyl-6-(2-methyl benzoyl)-9H-carbazole-3-base]-1-(O-acetyl oxime) (gorgeous good solid (Irgacure) OXE02 of radioactivity-sensitive polymerization initiator, BASF (BASF) company) 5 mass parts, the mode becoming 30 quality % with solid component concentration adds propylene glycol methyl ether acetate and after making each component dissolves, filter with the millipore filter that aperture is 0.5 μm, preparation has the 2nd radiation-sensitive resin composition of the radioactivity-sensitive of minus thus.
Embodiment 5
[preparation of the 3rd radiation-sensitive resin composition of eurymeric]
Prepare containing the solution of alkali soluble resin (A-I) as alkali soluble resin using the amount being equivalent to polymkeric substance 100 mass parts (solid constituent), secondly 4 of the quinone di-azido compound as light acid producing agent are mixed, 4 '-[1-[4-[1-[4-hydroxy phenyl]-1-Methylethyl] phenyl] ethylidene] bis-phenol (1.0 moles) 30 mass parts, comprise dispersion liquid 50 mass parts (solid constituent) as the barium titanate of metallics, the mode becoming 30 quality % with solid component concentration adds diethylene glycol ethyl methyl ether, after making each component dissolves, filter with the membrane filter that aperture is 0.2 μm, preparation has the 3rd radiation-sensitive resin composition of the radioactivity-sensitive of eurymeric.
Embodiment 6
[evaluation of film]
Use the 3rd radiation-sensitive resin composition prepared in the 2nd radiation-sensitive resin composition prepared in the 1st radiation-sensitive resin composition prepared in embodiment 3, embodiment 4 and embodiment 5 respectively, spin coater is used to be coated on by each composition after on glass substrate (" healthy and free from worry (registered trademark) 7059 " (Corning Incorporated's manufacture)), on hot plate, carry out the prebake conditions of 2 minutes at 100 DEG C and form film, forming the film that thickness is 1 μm respectively on the glass substrate.
Secondly, for the film on each glass substrate of gained, use Canon, Inc. manufacture PLA (registered trademark)-501F exposure machine (extra-high-pressure mercury vapour lamp), via have 5cm × 8cm rectangular patterns mask (mask) and expose.Thereafter, in the tetramethylammonium hydroxide aqueous solution of 2.38 quality %, carry out the development of 60 seconds at 25 DEG C.Secondly, carry out the flowing water cleaning of 1 minute with ultrapure water, the mode of the negative pattern or positive pattern that form the rectangle with 5cm × 8cm has carried out the cured film of patterning.
Secondly, carried out the end portion of each cured film of patterning with observation by light microscope, by and Nonvisualization residue, the situation that forms to rectilinearity pattern are judged as that pattern voltinism is good.
Its result, uses the 3rd radiation-sensitive resin composition prepared in the 2nd radiation-sensitive resin composition prepared in the 1st radiation-sensitive resin composition prepared in embodiment 3, embodiment 4 and embodiment 5 to carry out patterning and the pattern voltinism of each cured film that formed is all good respectively.
Secondly, by by above-mentioned each cured film respectively in cleaning oven, carry out heating for 1 hour at 220 DEG C and form dielectric film.
Spectrophotometer " 150-20 type Double-beam " (Hitachi Co., Ltd's manufacture) is used to measure with the wavelength of the scope of 400nm ~ 800nm the transmittance that these are formed with the glass substrate of dielectric film.Minimum light transmission rate if more than 90%, then can say that transmittance is good.
The each dielectric film formed by the 3rd radiation-sensitive resin composition prepared in the 2nd radiation-sensitive resin composition prepared in the 1st radiation-sensitive resin composition prepared in embodiment 3, embodiment 4 and embodiment 5 is all transmissivities of more than 90%.
Result according to above film is evaluated: the dielectric film formed by the 1st radiation-sensitive resin composition prepared in embodiment 3, the dielectric film formed by the 2nd radiation-sensitive resin composition prepared in embodiment 4 and the dielectric film formed by the 3rd radiation-sensitive resin composition prepared in embodiment 5 all can be used as the 1st dielectric film of liquid crystal display cells of the present invention or the 2nd dielectric film and use aptly.
[utilizability in industry]
Liquid crystal display cells of the present invention is the liquid crystal display cells having excellent light characteristic and can carry out the active matrix mode of fine display.Therefore, liquid crystal display cells of the present invention can be used as needs the display of the portable electronic machines such as the smart mobile phone of the display of the fine carrying out excellent image quality and utilizes aptly.
Claims (6)
1. a liquid crystal display cells, it is the liquid crystal display cells of the 1st substrate and the 2nd substrate clamping liquid crystal configured by subtend, it is characterized in that:
Described 1st substrate comprises:
Thin film transistor (TFT),
1st dielectric film, use the 1st radiation-sensitive resin composition and to be arranged on described thin film transistor (TFT),
Contact hole, be formed at described 1st dielectric film,
1st electrode, be arranged on described 1st dielectric film and on the inwall of described contact hole, be electrically connected with described thin film transistor (TFT) via described contact hole,
2nd dielectric film, use the 2nd radiation-sensitive resin composition in the mode of contact hole described in landfill and arrange and
2nd electrode, is arranged on described 2nd dielectric film, is connected, thus be electrically connected with described 1st electrode by its part with described 1st electrode part on described 1st dielectric film;
With on described 1st electrode that the 3rd electrode is arranged on described 1st substrate via the 3rd dielectric film and described 2nd electrode, or the 3rd electrode is arranged on the described liquid crystal side of described 2nd substrate; And
To described 1st electrode and apply voltage between described 2nd electrode and described 3rd electrode and drive the mode of described liquid crystal to form.
2. liquid crystal display cells according to claim 1, it is characterized in that: described 1st radiation-sensitive resin composition is the radiation-sensitive resin composition of eurymeric and described 2nd radiation-sensitive resin composition is the radiation-sensitive resin composition of minus, or described 1st radiation-sensitive resin composition is the radiation-sensitive resin composition of minus and described 2nd radiation-sensitive resin composition is the radiation-sensitive resin composition of eurymeric.
3. liquid crystal display cells according to claim 1 and 2, is characterized in that: described 1st radiation-sensitive resin composition contains polymkeric substance, and described polymkeric substance comprises the Component units with carboxyl and the Component units with polymerism base.
4. liquid crystal display cells according to claim 1 and 2, is characterized in that: described 2nd radiation-sensitive resin composition contains polymkeric substance, and described polymkeric substance comprises the Component units with carboxyl and the Component units with polymerism base.
5. a radiation-sensitive resin composition, it is the radiation-sensitive resin composition used in the manufacture of the liquid crystal display cells of the 1st substrate and the 2nd substrate clamping liquid crystal configured by subtend, it is characterized in that:
Described 1st substrate comprises:
Thin film transistor (TFT),
1st dielectric film, to be arranged on described thin film transistor (TFT),
Contact hole, be formed at described 1st dielectric film,
1st electrode, be arranged on described 1st dielectric film and on the inwall of described contact hole, be electrically connected with described thin film transistor (TFT) via described contact hole,
2nd dielectric film, arrange in the mode of contact hole described in landfill and
2nd electrode, is arranged on described 2nd dielectric film, is connected, thus be electrically connected with described 1st electrode by its part with described 1st electrode part on described 1st dielectric film;
Described liquid crystal display cells is with on described 1st electrode that the 3rd electrode is arranged on described 1st substrate via the 3rd dielectric film and described 2nd electrode, or the 3rd electrode to be arranged on the described liquid crystal side of described 2nd substrate, and to described 1st electrode and apply voltage between described 2nd electrode and described 3rd electrode and drive the mode of described liquid crystal to form;
Described radiation-sensitive resin composition is used for forming described 2nd dielectric film of described 1st substrate.
6. radiation-sensitive resin composition according to claim 5, is characterized in that: also comprise metal oxide particle.
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| JP2014-018082 | 2014-01-31 | ||
| JP2014018082 | 2014-01-31 | ||
| JP2014-254800 | 2014-12-17 | ||
| JP2014254800A JP6384308B2 (en) | 2014-01-31 | 2014-12-17 | Liquid crystal display element and radiation sensitive resin composition |
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Cited By (3)
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| CN109870855A (en) * | 2019-04-09 | 2019-06-11 | 京东方科技集团股份有限公司 | A kind of array substrate, liquid crystal display panel and liquid crystal display device |
| CN114902127A (en) * | 2020-02-27 | 2022-08-12 | 株式会社日本显示器 | Display device and liquid crystal display device |
| WO2024020767A1 (en) * | 2022-07-26 | 2024-02-01 | 京东方科技集团股份有限公司 | Array substrate and preparation method therefor, liquid crystal cell, and display device |
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| JP2024078814A (en) * | 2022-11-30 | 2024-06-11 | 株式会社ジャパンディスプレイ | Liquid crystal display device |
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| KR100923707B1 (en) | 1999-09-07 | 2009-10-27 | 가부시키가이샤 히타치세이사쿠쇼 | Liquid crystal display |
| JP5335628B2 (en) | 2009-09-09 | 2013-11-06 | 株式会社ジャパンディスプレイ | Liquid crystal display |
| JP5209754B2 (en) | 2011-04-22 | 2013-06-12 | 株式会社ジャパンディスプレイイースト | Liquid crystal display |
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| WO2020207255A1 (en) * | 2019-04-09 | 2020-10-15 | 京东方科技集团股份有限公司 | Array substrate and manufacturing method therefor, liquid crystal display panel, and liquid crystal display device |
| CN114902127A (en) * | 2020-02-27 | 2022-08-12 | 株式会社日本显示器 | Display device and liquid crystal display device |
| WO2024020767A1 (en) * | 2022-07-26 | 2024-02-01 | 京东方科技集团股份有限公司 | Array substrate and preparation method therefor, liquid crystal cell, and display device |
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| KR101971923B1 (en) | 2019-04-24 |
| KR20150091258A (en) | 2015-08-10 |
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