TWI531828B - Array substrate, liquid crystal display device, and method for producing array substrate - Google Patents
Array substrate, liquid crystal display device, and method for producing array substrate Download PDFInfo
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Description
本發明涉及一種陣列基板、液晶顯示元件及陣列基板的製造方法。 The present invention relates to an array substrate, a liquid crystal display element, and a method of fabricating an array substrate.
液晶顯示元件例如在玻璃基板等一對基板中夾持液晶而構成。在一對基板的表面可設置控制液晶配向的配向膜。液晶顯示元件對自背光源或外光等光源所放射的光發揮作為微細的光閘(shutter)的功能,使光部分性透過或進行遮光而進行顯示。液晶顯示元件具有薄型、輕量等優異的特徵。 The liquid crystal display element is configured by sandwiching a liquid crystal, for example, on a pair of substrates such as a glass substrate. An alignment film for controlling the alignment of the liquid crystal may be provided on the surface of the pair of substrates. The liquid crystal display element functions as a fine shutter for light emitted from a light source such as a backlight or external light, and partially transmits light or shields light to display. The liquid crystal display element is characterized by being thin, lightweight, and the like.
液晶顯示元件在開發的當初是用作以字符顯示等為中心的計算器或時鐘的顯示元件。其後,由於單純矩陣方式的開發,點陣顯示變容易而使用途擴大至筆記本電腦的顯示元件等中。另外,由於主動矩陣型的開發,變得可實現對比率或響應性能優異的良好畫質,亦克服了高精細化、彩色化及視角擴大等課題,從而將用途擴大至臺式電腦的顯示器用途等中。於最近,實現了更廣的視角或液晶的高速響應化或顯示品質的提高等,從而用作大型的薄型電視用顯示元件。 The liquid crystal display element was originally developed as a display element of a calculator or a clock centered on a character display or the like. Thereafter, due to the development of the simple matrix method, the dot matrix display becomes easy and the use is expanded to display elements of a notebook computer or the like. In addition, due to the development of the active matrix type, it is possible to achieve good image quality with excellent contrast ratio and response performance, and overcome the problems of high definition, colorization, and viewing angle expansion, thereby expanding the use to display applications for desktop computers. Wait. Recently, a wider viewing angle, a high-speed response of a liquid crystal, an improvement in display quality, and the like have been realized, and it has been used as a display element for a large-sized thin television.
而且,液晶顯示元件要求更進一步的高畫質化或亮度的提高。 Further, the liquid crystal display element requires further improvement in image quality or brightness.
於主動矩陣型的液晶顯示元件中,於夾持液晶的一對 基板中的其中一個上將閘配線與信號配線配設為格子狀,於閘配線與信號配線的交叉部設置薄膜電晶體(Thin Film Transister,TFT)等開關主動元件,構成陣列基板。於陣列基板上,像素電極配置於被閘配線與信號配線包圍的區域,並由該像素電極構成作為顯示單元的像素。 In an active matrix type liquid crystal display element, a pair of liquid crystals are sandwiched The gate wiring and the signal wiring are arranged in a lattice shape on one of the substrates, and a switching active element such as a thin film transistor (TFT) is provided at an intersection of the gate wiring and the signal wiring to constitute an array substrate. On the array substrate, the pixel electrode is disposed in a region surrounded by the gate wiring and the signal wiring, and the pixel electrode constitutes a pixel as a display unit.
於液晶顯示元件中,在欲實現亮度提高的情況下,有效的是使像素電極變大。可藉由使像素電極的面積盡可能地變大,使數值孔徑提高,從而使亮度增大。在這種情況下,例如已知有如專利文獻1所記載那樣使像素電極與閘配線或信號配線重疊,而使數值孔徑提高的技術。於專利文獻1中揭示了如下的液晶顯示元件:於陣列基板中,於配線與像素電極之間設置厚的包含有機材料的絕緣膜,藉此抑制像素電極與配線之間的耦合電容的增大,並且使數值孔徑提高。而且,於專利文獻2中揭示了適於形成絕緣膜的樹脂組成物。 In the liquid crystal display device, in order to achieve an improvement in luminance, it is effective to increase the pixel electrode. The numerical aperture can be increased by making the area of the pixel electrode as large as possible, thereby increasing the luminance. In this case, for example, as disclosed in Patent Document 1, a technique in which a pixel electrode is overlapped with a gate wiring or a signal wiring to increase a numerical aperture is known. Patent Document 1 discloses a liquid crystal display device in which a thick insulating film containing an organic material is provided between a wiring and a pixel electrode, thereby suppressing an increase in coupling capacitance between a pixel electrode and a wiring. And increase the numerical aperture. Further, Patent Document 2 discloses a resin composition suitable for forming an insulating film.
[專利文獻1]日本專利特開2001-264798號公報 [Patent Document 1] Japanese Patent Laid-Open Publication No. 2001-264798
[專利文獻2]日本專利特開2004-264623號公報 [Patent Document 2] Japanese Patent Laid-Open Publication No. 2004-264623
如專利文獻1中所記載的液晶顯示元件那樣,於陣列基板中在配線與像素電極之間設置厚的包含有機材料的絕緣膜時,TFT等開關元件與像素電極的電性連接可使用在絕緣膜上所設的接觸孔來實現。 When a thick insulating film containing an organic material is provided between the wiring and the pixel electrode in the array substrate as in the case of the liquid crystal display device described in Patent Document 1, the electrical connection between the switching element such as a TFT and the pixel electrode can be used for the insulation. The contact hole provided on the film is realized.
於在包含有機材料的絕緣膜上形成接觸孔時,有效的 是利用光刻技術。在這種情況下,作為絕緣膜的形成材料,如專利文獻2所記載那樣,優選使用感放射線性的樹脂組成物(以下稱為感放射線性樹脂組成物)。而且,特別是感放射線性樹脂組成物廣泛使用所謂的正型。 Effective when forming contact holes on an insulating film containing an organic material It is the use of lithography. In this case, as described in Patent Document 2, as a material for forming an insulating film, a radiation-sensitive resin composition (hereinafter referred to as a radiation-sensitive resin composition) is preferably used. Moreover, a so-called positive type is widely used, in particular, a radiation sensitive resin composition.
於使用正型感放射線性樹脂組成物的絕緣膜中,若感應到放射線則於顯影液中的溶解性增大,從而感應部分受到去除。因此,於使用正型感放射線性樹脂組成物時,可藉由對絕緣膜的接觸孔的形成部分照射放射線而比較容易地形成所期望的接觸孔。另外,在本發明中,所謂“放射線”是包括可見光線、紫外線、遠紫外線、X射線、帶電粒子束等的概念。對於此種正型感放射線性樹脂組成物,為了可以在所製造的絕緣膜中的所期望的位置以所期望的形狀形成接觸孔,要求具有高的放射線感光度,且可實現優異的圖案化性能。 In the insulating film using the positive-type radiation-sensitive resin composition, if radiation is induced, the solubility in the developer is increased, and the sensing portion is removed. Therefore, when a positive-type radiation-sensitive resin composition is used, a desired contact hole can be formed relatively easily by irradiating a portion where the contact hole of the insulating film is irradiated with radiation. Further, in the present invention, the term "radiation" is a concept including visible light rays, ultraviolet rays, far ultraviolet rays, X-rays, charged particle beams, and the like. With such a positive-type radiation-sensitive resin composition, in order to form a contact hole in a desired shape at a desired position in the manufactured insulating film, it is required to have high radiation sensitivity and excellent patterning can be realized. performance.
而且,於使用感放射線性樹脂組成物來製造具有接觸孔的絕緣膜的情況時,製造步驟中的絕緣膜伸縮成為問題。 Moreover, when the insulating film having a contact hole is manufactured using the radiation sensitive resin composition, the expansion and contraction of the insulating film in the manufacturing process becomes a problem.
亦即,於使用先前技術的感放射線性樹脂組成物製造具有接觸孔的絕緣膜的情況下,於照射放射線(以下稱為“曝光”)與顯影後,必需進行利用230℃~260℃左右的高溫的加熱而進行絕緣膜的硬化。因此,在利用光刻技術的先前技術的絕緣膜中,存在於製造步驟中產生熱膨脹或收縮等尺寸變動的擔憂。絕緣膜中的接觸孔嚴格要求配置位置與尺寸的管理,在絕緣膜的尺寸變動超過許可範圍的情況下,有時於接觸孔的形成中產生不良現象。 In other words, when an insulating film having a contact hole is produced using the radiation sensitive resin composition of the prior art, it is necessary to use about 230 ° C to 260 ° C after irradiation of radiation (hereinafter referred to as "exposure") and development. The insulating film is hardened by heating at a high temperature. Therefore, in the insulating film of the prior art using the photolithography technique, there is a concern that dimensional changes such as thermal expansion or shrinkage occur in the manufacturing steps. The contact hole in the insulating film strictly requires management of the arrangement position and size. When the dimensional change of the insulating film exceeds the allowable range, a problem may occur in the formation of the contact hole.
根據以上,期望使用感放射線性樹脂組成物來製造陣列基板上的絕緣膜,且抑制熱膨脹或收縮,形成所期望的接觸孔。因此,可於比先前技術低的溫度下硬化的感放射線性樹脂組成物變得有效。例如,優選可在比先前技術低的溫度的220℃以下的加熱溫度下硬化的感放射線性樹脂組成物,特別優選可在200℃以下的加熱溫度下硬化的感放射線性樹脂組成物。具有此種硬化特性的感放射線性樹脂組成物可提供如下的絕緣膜,所述絕緣膜是在利用曝光與顯影的圖案化後進行加熱硬化所製造出來的絕緣膜,且具有所期望的性能。 From the above, it is desirable to use the radiation sensitive resin composition to manufacture an insulating film on an array substrate, and to suppress thermal expansion or contraction to form a desired contact hole. Therefore, the radiation sensitive resin composition which can be hardened at a temperature lower than the prior art becomes effective. For example, a radiation sensitive resin composition which can be cured at a heating temperature of 220 ° C or lower which is lower than the temperature of the prior art is preferable, and a radiation sensitive resin composition which can be cured at a heating temperature of 200 ° C or lower is particularly preferable. The radiation-sensitive resin composition having such a hardening property can provide an insulating film which is an insulating film which is produced by heat-hardening after patterning by exposure and development, and has desired properties.
而且,最近,自節能的觀點考慮,變得要求使製造具有陣列基板的液晶顯示元件中的加熱步驟低溫化。亦即,於陣列基板與使用該陣列基板的液晶顯示元件的製造中,要求使各構成要件的硬化步驟等必需加熱的步驟低溫化而實現節能。 Moreover, recently, from the viewpoint of energy saving, it has been demanded to lower the heating step in manufacturing a liquid crystal display element having an array substrate. In other words, in the production of the array substrate and the liquid crystal display element using the array substrate, it is required to lower the temperature of the step of heating such as the hardening step of each constituent element to save energy.
根據以上,強烈期望實現具有高的放射線感光度,並且可藉由比先前技術低的溫度下的硬化而形成具有接觸孔的絕緣膜的感放射線性樹脂組成物。 In light of the above, it is strongly desired to realize a radiation-sensitive resin composition having a high radiation sensitivity and capable of forming an insulating film having a contact hole by hardening at a lower temperature than the prior art.
而且,強烈期望使用此種感放射線性樹脂組成物,實現具有藉由比先前技術低的溫度下的製造步驟而製造的絕緣膜的陣列基板。另外,強烈期望實現使用此種陣列基板所構成的液晶顯示元件。 Moreover, it is strongly desired to use such a radiation sensitive resin composition to realize an array substrate having an insulating film produced by a manufacturing process at a temperature lower than that of the prior art. In addition, it is strongly desired to realize a liquid crystal display element constructed using such an array substrate.
本發明是鑒於以上課題而成的。亦即,本發明的目的 在於使用具有高的放射線感光度,且可在比先前技術低的溫度下硬化的感放射線性樹脂組成物而提供絕緣膜,並且提供包含該絕緣膜的陣列基板及其製造方法。 The present invention has been made in view of the above problems. That is, the purpose of the present invention An insulating film is provided by using a radiation-sensitive resin composition having high radiation sensitivity and hardenable at a temperature lower than that of the prior art, and an array substrate including the insulating film and a method of manufacturing the same are provided.
而且,本發明的其他目的在於使用具有高的放射線感光度、可在比先前技術低的溫度下硬化的感放射線性樹脂組成物而提供絕緣膜,並且提供使用包含該絕緣膜的陣列基板所構成的液晶顯示元件。 Moreover, another object of the present invention is to provide an insulating film using a radiation sensitive resin composition having high radiation sensitivity, which can be hardened at a temperature lower than that of the prior art, and providing an array substrate including the insulating film. Liquid crystal display element.
本發明的第1態樣涉及一種陣列基板,其用於液晶顯示元件,包括:開關主動元件、於該開關主動元件上所配置的絕緣膜、於該絕緣膜上所形成的接觸孔、經由該接觸孔而與開關主動元件電性連接的像素電極、於所述像素電極上所形成的配向膜,所述陣列基板的特徵在於:絕緣膜是由含有如下成分的感放射線性樹脂組成物所形成的絕緣膜:[A]於同一或不同聚合物分子中具有包含下述式(1)所表示的基的結構單元與含有環氧基的結構單元的聚合物、及[B]光產酸劑;配向膜是使用包含具有光配向性基的感放射線性聚合物的液晶配向劑及包含不具光配向性基的聚醯亞胺的液晶配向劑中的任意種而所得的配向膜;
在式(1)中,R1及R2分別獨立為氫原子、烷基、環烷基或芳基,這些烷基、環烷基或芳基的氫原子的一部分或全部也可以被取代基取代,其中,並不存在R1及R2均為氫原子的情況;R3是烷基、環烷基、芳烷基、芳基或-M(R4)3所表示的基,這些基的氫原子的一部分或全部也可以被取代基取代,其中M為Si、Ge或Sn,R4為烷基;R1與R3亦可連結而形成環狀醚。 In the formula (1), R 1 and R 2 are each independently a hydrogen atom, an alkyl group, a cycloalkyl group or an aryl group, and some or all of the hydrogen atoms of these alkyl groups, cycloalkyl groups or aryl groups may be substituted. Wherein, in the case where R 1 and R 2 are each a hydrogen atom; R 3 is a group represented by an alkyl group, a cycloalkyl group, an arylalkyl group, an aryl group or -M(R 4 ) 3 , and these groups A part or all of the hydrogen atom may be substituted by a substituent, wherein M is Si, Ge or Sn, and R 4 is an alkyl group; and R 1 and R 3 may be bonded to form a cyclic ether.
在本發明的第1態樣中,優選[B]光產酸劑包含下述式(2)所表示的肟磺酸酯基;
在式(2)中,RB1是烷基、環烷基或芳基,這些基的 氫原子的一部分或全部也可以被取代基取代。 In the formula (2), R B1 is an alkyl group, a cycloalkyl group or an aryl group, and some or all of the hydrogen atoms of these groups may be substituted with a substituent.
在本發明的第1態樣中,優選感放射線性樹脂組成物含有[C]選自由下述式(C-1)所表示的化合物、鏻鹽、硫醇化合物及嵌段異氰酸酯化合物所構成的群組的至少1種化合物;
式(C-1)中,R7~R16分別獨立為氫原子、吸電子基或胺基;其中,R7~R16中的至少1個為胺基;而且,上述胺基的氫原子的全部或一部分也可以被碳數為2~6的伸烷基取代;A是單鍵、羰基、羰氧基、羰基亞甲基、亞磺醯基、磺醯基、亞甲基或碳數為2~6的伸烷基;其中,上述亞甲基及伸烷基的氫原子的全部或一部分也可以被氰基、鹵素原子或氟烷基取代。 In the formula (C-1), R 7 to R 16 each independently represent a hydrogen atom, an electron withdrawing group or an amine group; wherein at least one of R 7 to R 16 is an amine group; and further, the hydrogen atom of the above amine group All or part of it may be substituted by an alkylene group having 2 to 6 carbon atoms; A is a single bond, a carbonyl group, a carbonyloxy group, a carbonylmethylene group, a sulfinyl group, a sulfonyl group, a methylene group or a carbon number. It is an alkylene group of 2 to 6; wherein all or a part of the hydrogen atom of the above methylene group and alkylene group may be substituted by a cyano group, a halogen atom or a fluoroalkyl group.
在本發明的第1態樣中,優選配向膜是使用包含具有光配向性基的感放射線性聚合物的液晶配向劑而獲得的配向膜。 In the first aspect of the invention, it is preferable that the alignment film is an alignment film obtained by using a liquid crystal alignment agent containing a radiation-sensitive polymer having a photo-alignment group.
本發明的第2態樣涉及一種液晶顯示元件,其特徵在 於包含本發明的第1態樣的陣列基板。 A second aspect of the invention relates to a liquid crystal display element characterized in The array substrate comprising the first aspect of the invention.
本發明的第3態樣涉及一種陣列基板的製造方法,其特徵在於包括如下步驟:[1]在形成有開關主動元件的基板上形成含有如下化合物的感放射線性樹脂組成物的塗膜的步驟:[A]於同一或不同聚合物分子中具有包含下述式(1)所表示的基的結構單元與含有環氧基的結構單元的聚合物、及[B]光產酸劑;[2]對所述感放射線性樹脂組成物的塗膜的至少一部分照射放射線的步驟;[3]對在步驟[2]中照射了放射線的塗膜進行顯影,獲得形成有接觸孔的塗膜的步驟;以及[4]對在步驟[3]中所得的塗膜進行硬化而形成絕緣膜的步驟;
在式(1)中,R1及R2分別獨立為氫原子、烷基、環烷基或芳基,這些烷基、環烷基或芳基的氫原子的一部分或全部也可以被取代基取代,其中,並不存在R1及R2均 為氫原子的情況;R3是烷基、環烷基、芳烷基、芳基或-M(R4)3所表示的基,這些基的氫原子的一部分或全部也可以被取代基取代,其中M為Si、Ge或Sn,R4為烷基;R1與R3亦可連結而形成環狀醚。 In the formula (1), R 1 and R 2 are each independently a hydrogen atom, an alkyl group, a cycloalkyl group or an aryl group, and some or all of the hydrogen atoms of these alkyl groups, cycloalkyl groups or aryl groups may be substituted. Wherein, in the case where R 1 and R 2 are each a hydrogen atom; R 3 is a group represented by an alkyl group, a cycloalkyl group, an arylalkyl group, an aryl group or -M(R 4 ) 3 , and these groups A part or all of the hydrogen atom may be substituted by a substituent, wherein M is Si, Ge or Sn, and R 4 is an alkyl group; and R 1 and R 3 may be bonded to form a cyclic ether.
在本發明的第3態樣中,優選[B]光產酸劑包含下述式(2)所表示的肟磺酸酯基,
式(2)中,RB1是烷基、環烷基或芳基,這些基的氫原子的一部分或全部也可以被取代基取代。 In the formula (2), R B1 is an alkyl group, a cycloalkyl group or an aryl group, and some or all of the hydrogen atoms of these groups may be substituted with a substituent.
在本發明的第3態樣中,優選感放射線性樹脂組成物含有[C]選自由下述式(C-1)所表示的化合物、鏻鹽、硫醇化合物及嵌段異氰酸酯化合物所構成的群組的至少1種化合物;[化6]
在式(C-1)中,R7~R16分別獨立為氫原子、吸電子基或胺基;其中,R7~R16中的至少1個為胺基;而且,上述胺基的氫原子的全部或一部分也可以被碳數為2~6的伸烷基取代;A是單鍵、羰基、羰氧基、羰基亞甲基、亞磺醯基、磺醯基、亞甲基或碳數為2~6的伸烷基;其中,上述亞甲基及伸烷基的氫原子的全部或一部分也可以被氰基、鹵素原子或氟烷基取代。 In the formula (C-1), R 7 to R 16 are each independently a hydrogen atom, an electron withdrawing group or an amine group; wherein at least one of R 7 to R 16 is an amine group; moreover, the hydrogen of the above amine group All or part of an atom may also be substituted by an alkylene group having 2 to 6 carbon atoms; A is a single bond, a carbonyl group, a carbonyloxy group, a carbonylmethylene group, a sulfinyl group, a sulfonyl group, a methylene group or a carbon. The alkyl group having 2 to 6 carbon atoms; wherein all or a part of the hydrogen atom of the above methylene group and alkylene group may be substituted by a cyano group, a halogen atom or a fluoroalkyl group.
在本發明的第3態樣中,優選進一步包含於200℃以下形成配向膜的步驟。 In the third aspect of the invention, it is preferable to further comprise the step of forming an alignment film at 200 ° C or lower.
在本發明的第3態樣中,優選於200℃以下形成配向膜的步驟是使用包含具有光配向性基的感放射線性聚合物的液晶配向劑及包含不具光配向性基的聚醯亞胺的液晶配向劑中的任意種而形成配向膜。 In the third aspect of the present invention, the step of forming the alignment film preferably at 200 ° C or lower is to use a liquid crystal alignment agent containing a radiation-sensitive polymer having a photo-alignment group and a polyimide having a photo-alignment group. Any of the liquid crystal alignment agents forms an alignment film.
根據本發明,提供一種由具有高的放射線感光度且可於低溫下硬化的感放射線性樹脂組成物所形成的絕緣膜,且提供包含該絕緣膜的陣列基板及其製造方法。 According to the present invention, there is provided an insulating film formed of a radiation sensitive resin composition having high radiation sensitivity and which can be cured at a low temperature, and an array substrate including the insulating film and a method of manufacturing the same are provided.
而且,根據本發明,提供一種由具有高的放射線感光 度且可於低溫下硬化的感放射線性樹脂組成物所形成的絕緣膜,且提供包含具有該絕緣膜的陣列基板的液晶顯示元件。 Moreover, according to the present invention, there is provided a radiation sensitization having high An insulating film formed of a radiation sensitive resin composition which can be cured at a low temperature, and a liquid crystal display element including an array substrate having the insulating film.
對本發明的實施形態的陣列基板及液晶顯示元件加以說明。 The array substrate and the liquid crystal display element of the embodiment of the present invention will be described.
本實施形態的液晶顯示元件是使用本實施形態的陣列基板所構成的彩色液晶顯示元件。以下,使用圖式對本實施形態的陣列基板的結構及本實施形態的液晶顯示元件的結構加以說明。 The liquid crystal display element of this embodiment is a color liquid crystal display element which uses the array substrate of this embodiment. Hereinafter, the configuration of the array substrate of the present embodiment and the configuration of the liquid crystal display element of the present embodiment will be described with reference to the drawings.
本實施形態的液晶顯示元件例如可設為主動矩陣型的彩色液晶顯示元件。本實施形態的液晶顯示元件可設為形成有開關主動元件、電極、及絕緣膜的本實施形態的陣列基板與形成有透明電極的彩色濾光片基板介隔液晶層而對向的結構。 The liquid crystal display element of the present embodiment can be, for example, an active matrix type color liquid crystal display element. The liquid crystal display device of the present embodiment can be configured such that the array substrate of the present embodiment in which the switching active device, the electrode, and the insulating film are formed and the color filter substrate on which the transparent electrode is formed are opposed to each other with the liquid crystal layer interposed therebetween.
圖1是表示本實施形態的陣列基板的主要部分結構的模式剖面圖。 Fig. 1 is a schematic cross-sectional view showing a configuration of a main part of an array substrate of the embodiment.
圖2是本實施形態的陣列基板的模式性電極配線圖。 Fig. 2 is a schematic electrode wiring diagram of the array substrate of the embodiment.
圖1中所示的陣列基板1是本實施形態的陣列基板的一例。於透明基板4的其中一個面配置有開關主動元件8。而且,配置有與開關主動元件8連接的源極5、汲極6、閘極7。於開關主動元件8上設有絕緣膜12,於絕緣膜12 上配置有作為像素電極的透明電極9。 The array substrate 1 shown in Fig. 1 is an example of the array substrate of the present embodiment. A switching active element 8 is disposed on one surface of the transparent substrate 4. Further, a source 5, a drain 6, and a gate 7 connected to the switching active element 8 are disposed. An insulating film 12 is disposed on the switching active device 8 on the insulating film 12 A transparent electrode 9 as a pixel electrode is disposed thereon.
透明電極9由包含摻雜有錫的氧化銦(Indium Tin Oxide,ITO)等的透明導電膜所形成。於透明電極9上可如圖所示地設置控制液晶配向的配向膜10。以貫通絕緣膜12的方式而設置的凹部結構是接觸孔17,經由該部分而使透明電極9與汲極6電性連接。其結果變得可進行作為像素電極的透明電極9與開關主動元件8的電性連接。 The transparent electrode 9 is formed of a transparent conductive film containing indium tin oxide (ITO) doped with tin or the like. An alignment film 10 for controlling the alignment of the liquid crystal can be disposed on the transparent electrode 9 as shown. The recessed portion provided to penetrate the insulating film 12 is a contact hole 17 through which the transparent electrode 9 and the drain 6 are electrically connected. As a result, electrical connection between the transparent electrode 9 as a pixel electrode and the switching active element 8 can be performed.
而且,如圖2所示那樣,於陣列基板1上將源配線18與閘配線19配設為矩陣狀。於源配線18與閘配線19的交叉部附近設置包含源極5、汲極6、閘極7的開關主動元件8,源極5與源配線18連接,閘極7與閘配線19連接。如上所述而於陣列基板1上構成被劃分的各像素。 Further, as shown in FIG. 2, the source wiring 18 and the gate wiring 19 are arranged in a matrix on the array substrate 1. A switching active device 8 including a source 5, a drain 6 and a gate 7 is provided in the vicinity of an intersection of the source wiring 18 and the gate wiring 19. The source 5 is connected to the source wiring 18, and the gate 7 is connected to the gate wiring 19. The divided pixels are formed on the array substrate 1 as described above.
如後述那樣,於本實施形態的陣列基板1中,絕緣膜12是在形成有源極5等電極與開關主動元件8的基板4上塗布本實施形態的感放射線性樹脂組成物,進行了形成接觸孔17等必需的圖案化後,使其硬化而形成。絕緣膜12的形成中所使用的本實施形態的感放射線性樹脂組成物例如可設為正型。 As will be described later, in the array substrate 1 of the present embodiment, the insulating film 12 is formed by applying the radiation-sensitive resin composition of the present embodiment to the substrate 4 on which the electrode such as the source electrode 5 and the switching active device 8 are formed. After the necessary patterning of the contact hole 17 or the like, it is formed by hardening. The radiation sensitive resin composition of the present embodiment used for forming the insulating film 12 can be, for example, a positive type.
本實施形態的感放射線性樹脂組成物具有如下的特徵:具有高的放射線感光度,在圖案化後,可藉由在比先前技術低的溫度下的硬化而形成絕緣膜12。例如可藉由在220℃以下的溫度下的加熱硬化而形成絕緣膜12。而且,藉由使感放射線性樹脂組成物的組成最佳化,亦可藉由在更低溫的200℃以下的溫度下的加熱硬化而形成絕緣膜 12。因此,絕緣膜12可抑制硬化步驟中的尺寸變動,並且可形成所期望的配置位置與尺寸的接觸孔17。而且,本實施形態的陣列基板1例如可藉由在220℃以下的硬化、進一步而言在作為更低溫的200℃以下的硬化而形成絕緣膜12,變得可藉由在比先前技術低的溫度下的加熱而製造。 The radiation sensitive resin composition of the present embodiment has a characteristic of having high radiation sensitivity, and after patterning, the insulating film 12 can be formed by curing at a temperature lower than that of the prior art. The insulating film 12 can be formed, for example, by heat hardening at a temperature of 220 ° C or lower. Further, by optimizing the composition of the radiation sensitive resin composition, it is also possible to form an insulating film by heat hardening at a temperature lower than 200 ° C. 12. Therefore, the insulating film 12 can suppress the dimensional variation in the hardening step, and can form the contact hole 17 of the desired arrangement position and size. Further, the array substrate 1 of the present embodiment can be formed by, for example, curing at 220 ° C or lower, and further, curing at a lower temperature of 200 ° C or lower to form the insulating film 12, which can be made lower than in the prior art. Manufactured by heating at temperature.
另外,於本實施形態的陣列基板1中,形成透明電極9後,可設置液晶配向控制用配向膜10。配向膜10可如後述那樣使用包含具有光配向性基的感放射線性聚合物的液晶配向劑或包含不具光配向性基的聚醯亞胺的液晶配向劑而形成。在此情況下,變得可在低溫的加熱溫度下形成配向膜10,例如變得可在200℃以下的加熱溫度下形成配向膜10。因此,在本實施形態的陣列基板1中,例如可藉由200℃以下等的低溫加熱而形成絕緣膜12,另外例如可藉由200℃以下的低溫加熱而形成配向膜10。因此,本實施形態的陣列基板1具有配向膜10,且變得可藉由在比先前技術低的溫度下的加熱而被製造。 Further, in the array substrate 1 of the present embodiment, after the transparent electrode 9 is formed, the alignment film 10 for liquid crystal alignment control can be provided. The alignment film 10 can be formed using a liquid crystal alignment agent containing a radiation-sensitive polymer having a photo-alignment group or a liquid crystal alignment agent containing a polyimide having no photo-alignment group, as will be described later. In this case, it becomes possible to form the alignment film 10 at a low temperature heating temperature, for example, it becomes possible to form the alignment film 10 at a heating temperature of 200 ° C or lower. Therefore, in the array substrate 1 of the present embodiment, for example, the insulating film 12 can be formed by low-temperature heating of 200 ° C or lower, and the alignment film 10 can be formed by, for example, heating at a low temperature of 200 ° C or lower. Therefore, the array substrate 1 of the present embodiment has the alignment film 10 and can be manufactured by heating at a lower temperature than the prior art.
其次,對使用本實施形態的陣列基板的本實施形態的液晶顯示元件加以說明。 Next, a liquid crystal display element of this embodiment using the array substrate of the present embodiment will be described.
圖3是本實施形態的液晶顯示元件的模式剖面圖。 Fig. 3 is a schematic cross-sectional view showing a liquid crystal display element of the embodiment.
圖3中所示的液晶顯示元件21是包含陣列基板1與彩色濾光片基板22的彩色液晶顯示元件,是本實施形態的液晶顯示元件的一例。液晶顯示元件21例如是薄膜電晶體型的扭轉向列(Twisted Nematic,TN)模式液晶顯示元件,具有圖1中所示的本實施形態的陣列基板1與彩色濾光片 基板22介隔包含TN液晶的液晶層23而對向的結構。 The liquid crystal display element 21 shown in FIG. 3 is a color liquid crystal display element including the array substrate 1 and the color filter substrate 22, and is an example of the liquid crystal display element of the present embodiment. The liquid crystal display element 21 is, for example, a thin film transistor type twisted nematic (TN) mode liquid crystal display element, and has the array substrate 1 and the color filter of the present embodiment shown in FIG. The substrate 22 has a structure in which the liquid crystal layer 23 including the TN liquid crystal is opposed to each other.
陣列基板1如圖3所示那樣具有如下的結構:於透明基板4的液晶層23側的面配置有源極5、汲極6、閘極7、開關主動元件8、絕緣膜12。而且,於絕緣膜12上設有作為像素電極的透明電極9。於絕緣膜12上設有貫通絕緣膜12的接觸孔17,經由該部分而將透明電極9與汲極6電性連接。其結果變得可進行作為像素電極的透明電極9與開關主動元件8的電性連接。於透明電極9上設有液晶配向控制用配向膜10。 As shown in FIG. 3, the array substrate 1 has a structure in which a source electrode 5, a drain electrode 6, a gate electrode 7, a switching active element 8, and an insulating film 12 are disposed on a surface of the transparent substrate 4 on the liquid crystal layer 23 side. Further, a transparent electrode 9 as a pixel electrode is provided on the insulating film 12. A contact hole 17 penetrating the insulating film 12 is provided on the insulating film 12, and the transparent electrode 9 and the drain 6 are electrically connected via the portion. As a result, electrical connection between the transparent electrode 9 as a pixel electrode and the switching active element 8 can be performed. The alignment film 10 for liquid crystal alignment control is provided on the transparent electrode 9.
彩色濾光片基板22於透明基板11的液晶層23側的面配置有紅色、綠色及藍色的微小的著色圖案15與黑色矩陣13。紅色、綠色及藍色的著色圖案15排列為格子狀等規則的形狀。另外,關於著色圖案15的顏色,並不僅僅限定於上述紅色、綠色及藍色這3色,還可以選擇其他顏色或者進一步加入黃色而製成4色的著色圖案。而且,可排列各色的著色圖案而構成彩色濾光片基板。 On the color filter substrate 22, a minute color pattern 15 of red, green, and blue and a black matrix 13 are disposed on the surface of the transparent substrate 11 on the liquid crystal layer 23 side. The red, green, and blue color patterns 15 are arranged in a regular shape such as a lattice shape. Further, the color of the colored pattern 15 is not limited to the above three colors of red, green, and blue, and may be selected from other colors or further added with yellow to form a four-color colored pattern. Further, a color filter pattern of each color can be arranged to form a color filter substrate.
於著色圖案15與黑色矩陣13上設有透明的公共電極14。於彩色濾光片基板22的與液晶層23相接的面設有與陣列基板1同樣的配向膜10。陣列基板1與彩色濾光片基板22的配向膜10若有必要則實施配向處理,從而實現於陣列基板1與彩色濾光片基板22之間所夾持的液晶層23的均一配向。 A transparent common electrode 14 is provided on the coloring pattern 15 and the black matrix 13. The alignment film 10 similar to the array substrate 1 is provided on the surface of the color filter substrate 22 that is in contact with the liquid crystal layer 23. The alignment film 10 of the array substrate 1 and the color filter substrate 22 is subjected to alignment treatment if necessary, thereby achieving uniform alignment of the liquid crystal layer 23 sandwiched between the array substrate 1 and the color filter substrate 22.
而且,介隔液晶層23而對向的陣列基板1與彩色濾光片基板22之間的距離可由未圖示的間隔件而維持,通常 為2 μm~10 μm。陣列基板1與彩色濾光片基板22由周邊部所設的密封材料(未圖示)而相互固定。 Further, the distance between the array substrate 1 and the color filter substrate 22 opposed to each other via the liquid crystal layer 23 can be maintained by a spacer (not shown), and usually It is 2 μm~10 μm. The array substrate 1 and the color filter substrate 22 are fixed to each other by a sealing material (not shown) provided in the peripheral portion.
於陣列基板1與彩色濾光片基板22中,於與液晶層23相接之側的相反側分別配置有偏光板28。 In the array substrate 1 and the color filter substrate 22, a polarizing plate 28 is disposed on the side opposite to the side in contact with the liquid crystal layer 23, respectively.
於圖3中,符號27是自成為液晶顯示元件21的光源的背光單元(未圖示)向液晶層23照射的背光源光。背光單元例如可使用組合有冷陰極螢光管(Cold Cathode Fluorescent Lamp,CCFL)等螢光管與散射板而成的結構的背光單元。而且,還可以使用以白色LED為光源的背光單元。白色LED例如可列舉使用具有獨立光譜的紅色LED、綠色LED、藍色LED而獲得白色光的白色LED,將紅色LED、綠色LED、藍色LED加以組合而藉由混色獲得白色光的白色LED,將藍色LED、紅色LED、綠色螢光體加以組合而藉由混色獲得白色光的白色LED,將藍色LED、紅色發光螢光體、綠色發光螢光體加以組合而藉由混色獲得白色光的白色LED,藉由藍色LED、YAG類螢光體的混色而獲得白色光的白色LED,將藍色LED、橙色發光螢光體、綠色發光螢光體加以組合而藉由混色獲得白色光的白色LED,將紫外線LED、紅色發光螢光體、綠色發光螢光體、藍色發光螢光體加以組合而藉由混色獲得白色光的白色LED等。 In FIG. 3, reference numeral 27 is backlight light that is irradiated to the liquid crystal layer 23 from a backlight unit (not shown) that is a light source of the liquid crystal display element 21. As the backlight unit, for example, a backlight unit having a structure in which a fluorescent tube such as a Cold Cathode Fluorescent Lamp (CCFL) or a diffusion plate is combined can be used. Moreover, a backlight unit using a white LED as a light source can also be used. Examples of the white LED include a white LED that uses a red LED having an independent spectrum, a green LED, and a blue LED to obtain white light, and a white LED that combines a red LED, a green LED, and a blue LED to obtain white light by color mixing. A blue LED, a red LED, and a green phosphor are combined to obtain a white LED by mixing colors, and a blue LED, a red illuminating phosphor, and a green luminescent phosphor are combined to obtain white light by color mixing. White LED, which is a white LED with white light by mixing blue LEDs and YAG phosphors, and combines blue LEDs, orange luminescent phosphors, and green luminescent phosphors to obtain white light by color mixing. The white LED is a white LED that combines an ultraviolet LED, a red illuminating phosphor, a green illuminating phosphor, and a blue illuminating phosphor to obtain white light by color mixing.
關於本實施形態的液晶顯示元件21的液晶模式,除了上述TN模式以外,還可以設為超扭轉向列(Super Twisted Nematic,STN)、共面轉換(In-Planes Switching, IPS)、垂直配向(Vertical Alignment,VA)或光學補償雙折射(Optically Compensated Birefringence,OCB)等液晶模式。在這種情況下,特別是關於配向膜10,選擇實現最適合各液晶模式的液晶層23的配向的配向膜。例如,在本實施形態的液晶顯示元件21為VA模式的液晶顯示元件時,配向膜10使用垂直配向型的配向膜。 The liquid crystal mode of the liquid crystal display element 21 of the present embodiment may be a super twisted nematic (STN) or a coplanar switching (In-Planes Switching) in addition to the TN mode described above. Liquid crystal mode such as IPS), Vertical Alignment (VA) or Optically Compensated Birefringence (OCB). In this case, in particular, with respect to the alignment film 10, an alignment film which realizes the alignment which is most suitable for the liquid crystal layer 23 of each liquid crystal mode is selected. For example, when the liquid crystal display element 21 of the present embodiment is a VA mode liquid crystal display element, the alignment film 10 is a vertical alignment type alignment film.
如上所述,本實施形態的液晶顯示元件21具有本實施形態的陣列基板1。於陣列基板1中,經由絕緣膜12上所設的接觸孔17而實現透明電極9與汲極6的電性連接。陣列基板1的絕緣膜12可使用本實施形態的感放射線性樹脂組成物,並藉由例如200℃以下的低溫下的加熱硬化而形成。因此,於本實施形態的液晶顯示元件21中,於陣列基板1中,可藉由所期望的配置位置與尺寸的接觸孔17而實現透明電極9與汲極6的電性連接。 As described above, the liquid crystal display element 21 of the present embodiment includes the array substrate 1 of the present embodiment. In the array substrate 1, the transparent electrode 9 and the drain 6 are electrically connected via the contact hole 17 provided in the insulating film 12. The insulating film 12 of the array substrate 1 can be formed by using a radiation-sensitive resin composition of the present embodiment and heat-hardening at a low temperature of, for example, 200 ° C or lower. Therefore, in the liquid crystal display element 21 of the present embodiment, in the array substrate 1, the transparent electrode 9 and the drain 6 can be electrically connected by the contact hole 17 of a desired arrangement position and size.
其次,對本實施形態的液晶顯示元件的陣列基板的主要構成元件,且可藉由在比先前技術低的溫度下的加熱而硬化的絕緣膜的形成加以詳細說明。特別是本實施形態的陣列基板的絕緣膜可使用本實施形態的感放射線性樹脂組成物而形成,於以下對本實施形態的感放射線性樹脂組成物加以詳細說明。 Next, the main constituent elements of the array substrate of the liquid crystal display element of the present embodiment can be described in detail by the formation of an insulating film which is cured by heating at a temperature lower than that of the prior art. In particular, the insulating film of the array substrate of the present embodiment can be formed by using the radiation sensitive resin composition of the present embodiment, and the radiation sensitive resin composition of the present embodiment will be described in detail below.
本實施形態的陣列基板的絕緣膜的製造中所使用的感放射線性樹脂組成物含有:[A]特定的聚合物(以下亦簡稱為“[A]聚合物”)及[B]光產酸劑。而且,可進一步含有 後文所詳述的[C]化合物。而且,除了[A]成分([A]聚合物)及[B]成分([B]光產酸劑)、可進一步含有的[C]成分([C]化合物)以外,只要不損及本發明的效果,則亦可含有其他任意成分。具有以上組成的本實施形態的感放射線性樹脂組成物可用作正型的感放射線性樹脂組成物。以下,對本實施形態的感放射線性樹脂組成物中所含有的各成分加以說明。 The radiation sensitive resin composition used in the production of the insulating film of the array substrate of the present embodiment contains: [A] a specific polymer (hereinafter also simply referred to as "[A] polymer") and [B] photoacid Agent. Moreover, it may further contain The compound [C] detailed later. Further, in addition to the [A] component ([A] polymer) and the [B] component ([B] photoacid generator), and the further [C] component ([C] compound), as long as the present invention is not damaged The effects of the invention may also contain other optional components. The radiation sensitive resin composition of the present embodiment having the above composition can be used as a positive radiation sensitive resin composition. Hereinafter, each component contained in the radiation sensitive resin composition of the present embodiment will be described.
[A]聚合物在同一或不同聚合物分子中具有包含下述式(1)所表示的基的結構單元(以下亦簡稱為“結構單元(1)”)與含有環氧基的結構單元,且亦可視需要具有其他結構單元。[A]聚合物的態樣並無特別限定,可列舉:(i)於同一聚合物分子中具有結構單元(1)及含有環氧基的結構單元這兩種結構單元,且於[A]聚合物中存在1種聚合物分子的情況;(ii)於一聚合物分子中具有結構單元(1),於與其不同的聚合物分子中具有含有環氧基的結構單元,且於[A]聚合物中存在2種聚合物分子的情況;(iii)於一聚合物分子中具有結構單元(1)及含有環氧基的結構單元這兩種結構單元,於與其不同的聚合物分子中具有結構單元(1),於與這些分子更進一步不同的聚合物分子中具有含有環氧基的結構單元,於[A]聚合物中存在3種聚合物分子的情況;(iv)除了(i)~(iii)中所規定的聚合物分子以外, 於[A]聚合物中進一步包含另外1種或2種以上聚合物分子的情況等。 [A] The polymer has a structural unit (hereinafter also simply referred to as "structural unit (1)") containing a group represented by the following formula (1) and a structural unit containing an epoxy group in the same or different polymer molecules, Other structural units are also available as needed. The aspect of the [A] polymer is not particularly limited, and examples thereof include (i) two structural units having a structural unit (1) and a structural unit containing an epoxy group in the same polymer molecule, and [A] a case where one polymer molecule is present in a polymer; (ii) has a structural unit (1) in a polymer molecule, and has a structural unit containing an epoxy group in a polymer molecule different therefrom, and [A] a case where two kinds of polymer molecules are present in a polymer; (iii) two structural units having a structural unit (1) and a structural unit containing an epoxy group in a polymer molecule, having a polymer molecule different therefrom The structural unit (1) has a structural unit containing an epoxy group in a polymer molecule further different from these molecules, and three polymer molecules are present in the [A] polymer; (iv) except (i) In addition to the polymer molecules specified in ~(iii), When the [A] polymer further contains another one or two or more kinds of polymer molecules, and the like.
在上述式(1)中,R1及R2分別獨立為氫原子、烷基、環烷基或芳基,這些烷基、環烷基或芳基的氫原子的一部分或者全部也可以被取代基取代(其中,並不存在R1及R2均為氫原子的情況)。R3是烷基、環烷基、芳烷基、芳基或-M(R4)3所表示的基(M是Si、Ge或Sn,R4是烷基),這些氫原子的一部分或者全部也可以被取代基取代。R1與R3亦可連結而形成環狀醚。 In the above formula (1), R 1 and R 2 each independently represent a hydrogen atom, an alkyl group, a cycloalkyl group or an aryl group, and some or all of the hydrogen atoms of these alkyl groups, cycloalkyl groups or aryl groups may be substituted. A base substitution (wherein, there is no case where both R 1 and R 2 are hydrogen atoms). R 3 is an alkyl group, a cycloalkyl group, an aralkyl group, an aryl group or a group represented by -M(R 4 ) 3 (M is Si, Ge or Sn, and R 4 is an alkyl group), and a part of these hydrogen atoms or All may also be substituted by a substituent. R 1 and R 3 may also be bonded to form a cyclic ether.
結構單元(1)包含上述式(1)所表示的基。上述式(1)所表示的基具有縮醛結構或縮酮結構,成為對於鹼而言比較穩定,另一方面在酸的存在下解離而生成極性基的基(以下亦簡稱為“酸解離性基”)。因此,於結構單元(1)中,由於藉由照射放射線而由後述的[B]光產酸劑所生成的酸,酸解離性基解離。其結果,具有結構單元(1)且為鹼不溶性的[A]聚合物成為鹼溶性。以下,對結構單元(1) 中所含的上述式(1)所表示的基加以更詳細的說明。 The structural unit (1) contains the group represented by the above formula (1). The group represented by the above formula (1) has an acetal structure or a ketal structure, and is a group which is relatively stable to a base and which is dissociated in the presence of an acid to form a polar group (hereinafter also referred to as "acid dissociation". base"). Therefore, in the structural unit (1), the acid dissociable group is dissociated by the acid generated by the [B] photoacid generator described later by irradiation with radiation. As a result, the [A] polymer having the structural unit (1) and being alkali-insoluble is alkali-soluble. Below, for the structural unit (1) The group represented by the above formula (1) contained in the above will be described in more detail.
在上述式(1)中,R1及R2所表示的烷基優選為碳數為1~30的直鏈狀及分支狀烷基,該烷基鏈中亦可具有氧原子、硫原子、氮原子。上述烷基的具體例例如可列舉甲基、乙基、正丙基、正丁基、正戊基、正己基、正辛基、正十二烷基、正十四烷基、正十八烷基等直鏈狀烷基,異丙基、異丁基、第三丁基、新戊基、2-己基、3-己基等分支狀烷基。 In the above formula (1), the alkyl group represented by R 1 and R 2 is preferably a linear or branched alkyl group having 1 to 30 carbon atoms, and the alkyl chain may have an oxygen atom or a sulfur atom. Nitrogen atom. Specific examples of the above alkyl group include methyl, ethyl, n-propyl, n-butyl, n-pentyl, n-hexyl, n-octyl, n-dodecyl, n-tetradecyl, n-octadecane. A linear alkyl group such as an alkyl group, a branched alkyl group such as an isopropyl group, an isobutyl group, a tert-butyl group, a neopentyl group, a 2-hexyl group or a 3-hexyl group.
在上述式(1)中,R1及R2所表示的環烷基優選為碳數為3~20的環烷基,亦可為多環,亦可於環內具有氧原子。上述環烷基的具體例例如可列舉環丙基、環戊基、環己基、環庚基、環辛基、冰片基、降冰片基、金剛烷基等。 In the above formula (1), the cycloalkyl group represented by R 1 and R 2 is preferably a cycloalkyl group having 3 to 20 carbon atoms, a polycyclic ring or an oxygen atom in the ring. Specific examples of the cycloalkyl group include a cyclopropyl group, a cyclopentyl group, a cyclohexyl group, a cycloheptyl group, a cyclooctyl group, a borneol group, a norbornyl group, and an adamantyl group.
在上述式(1)中,R1及R2所表示的芳基優選為碳數為6~14的芳基,可為單環,亦可為單環連結而成的結構,亦可為縮合環。上述芳基的具體例例如可列舉苯基、萘基等。 In the above formula (1), the aryl group represented by R 1 and R 2 is preferably an aryl group having a carbon number of 6 to 14, and may be a single ring or a single ring-bonded structure or a condensation. ring. Specific examples of the above aryl group include a phenyl group and a naphthyl group.
在上述式(1)中,R1及R2的氫原子的一部分或者全部也可以被取代基取代。此種取代基例如可列舉鹵素原子、羥基、硝基、氰基、羧基、羰基、環烷基(該環烷基可適宜地應用上述環烷基的說明)、芳基(該芳基可適宜地應用上述芳基的說明)、烷氧基(優選為碳數為1~20的烷氧基,例如可列舉甲氧基、乙氧基、丙氧基、正丁氧基、戊氧基、己氧基、庚氧基、辛氧基等)、醯基(優選為碳數為2~20的醯基,例如可列舉乙醯基、丙醯基、丁 醯基、異丁醯基等)、醯氧基(優選為碳數為2~10的醯氧基,例如可列舉乙醯氧基、乙醯氧基、丁醯氧基、第三丁醯氧基、第三戊醯氧基等)、烷氧基羰基(優選為碳數為2~20的烷氧基羰基,例如可列舉甲氧基羰基、乙氧基羰基、丙氧基羰基等)、鹵烷基(上述烷基或環烷基的氫原子的一部分或者全部被鹵素原子取代而成的基,例如可列舉全氟甲基、全氟乙基、全氟丙基、氟環丙基、氟環丁基等)等。關於芳基、環烷基等中的環狀結構,可列舉上述烷基作為更進一步的取代基。 In the above formula (1), part or all of the hydrogen atoms of R 1 and R 2 may be substituted with a substituent. Examples of such a substituent include a halogen atom, a hydroxyl group, a nitro group, a cyano group, a carboxyl group, a carbonyl group, a cycloalkyl group (the cycloalkyl group can be suitably used as described above), and an aryl group (the aryl group may be suitably used). The description of the above aryl group is used, and an alkoxy group (preferably an alkoxy group having 1 to 20 carbon atoms) may, for example, be a methoxy group, an ethoxy group, a propoxy group, a n-butoxy group or a pentyloxy group. a hexyloxy group, a heptyloxy group, an octyloxy group, etc., and a fluorenyl group (preferably a fluorenyl group having 2 to 20 carbon atoms, for example, an ethyl fluorenyl group, a propyl fluorenyl group, a butyl group, an isobutyl group, etc.), a decyloxy group. (preferably an anthraceneoxy group having 2 to 10 carbon atoms, and examples thereof include an ethyl methoxy group, an ethoxy group, a butoxy group, a third butyloxy group, a third pentyloxy group, etc.), an alkoxy group. a carbonyl group (preferably, an alkoxycarbonyl group having 2 to 20 carbon atoms, for example, a methoxycarbonyl group, an ethoxycarbonyl group, a propoxycarbonyl group, etc.), a haloalkyl group (hydrogen of the above alkyl group or a cycloalkyl group) Examples of the group in which a part or all of the atom is substituted by a halogen atom include, for example, a perfluoromethyl group, a perfluoroethyl group, a perfluoropropyl group, a fluorocyclopropyl group, a fluorocyclobutyl group or the like. Examples of the cyclic structure in the aryl group, the cycloalkyl group and the like include the above alkyl group as a further substituent.
在上述式(1)中,R3所表示的烷基、環烷基及芳基可應用R1及R2中的說明。在上述式(1)中,R3所表示的芳烷基優選列舉碳數為7~20的芳烷基,例如可列舉苄基、苯乙基、萘基甲基、萘基乙基等。在上述式(1)中,R3的-M(R4)3所表示的基例如可列舉三甲基矽烷基、三甲基鍺烷基等。作為亦可對該R3所表示的芳烷基或-M(R4)3所表示的基的氫原子的一部分或者全部進行取代的取代基可適宜地採用亦可對上述R1及R2的氫原子的一部分或者全部進行取代的取代基。 In the above formula (1), the alkyl group, the cycloalkyl group and the aryl group represented by R 3 may be as described in R 1 and R 2 . In the above formula (1), the aralkyl group represented by R 3 is preferably an aralkyl group having 7 to 20 carbon atoms, and examples thereof include a benzyl group, a phenethyl group, a naphthylmethyl group, and a naphthylethyl group. In the above formula (1), R -M 3 is (R 4) 3 group represented, for example, include alkyl trimethyl silicon, germanium, trimethyl alkyl group. The substituent which may be substituted with a part or all of the hydrogen atom of the aralkyl group represented by R 3 or the group represented by -M(R 4 ) 3 may be suitably used as well as the above R 1 and R 2 . A substituent in which a part or all of a hydrogen atom is substituted.
在上述式(1)中,R1與R3亦可連結而形成環狀醚。此種環狀醚例如可列舉2-環氧丙烷基、2-四氫呋喃基、2-四氫吡喃基、2-二氧雜環己基等。該環狀醚的氫原子的一部分或者全部也可以被上述取代基取代。 In the above formula (1), R 1 and R 3 may be bonded to each other to form a cyclic ether. Examples of such a cyclic ether include a 2-epoxypropane group, a 2-tetrahydrofuranyl group, a 2-tetrahydropyranyl group, and a 2-dioxanyl group. A part or all of the hydrogen atom of the cyclic ether may be substituted with the above substituent.
結構單元(1)由於具有藉由鍵結在碳原子上而變得具有縮醛結構或縮酮結構的官能基,因此可具有該縮醛結 構或縮酮結構。 The structural unit (1) may have the acetal knot because it has a functional group which has an acetal structure or a ketal structure by bonding to a carbon atom. Structure or ketal structure.
藉由鍵結在上述其他碳原子上而應該變得具有縮醛結構的官能基例如可列舉1-甲氧基乙氧基、1-乙氧基乙氧基、1-正丙氧基乙氧基、1-異丙氧基乙氧基、1-正丁氧基乙氧基、1-異丁氧基乙氧基、1-第二丁氧基乙氧基、1-第三丁氧基乙氧基、1-環戊氧基乙氧基、1-環己氧基乙氧基、1-降冰片基氧基乙氧基、1-冰片基氧基乙氧基、1-苯氧基乙氧基、1-(1-萘氧基)乙氧基、1-苄氧基乙氧基、1-苯乙氧基乙氧基、(環己基)(甲氧基)甲氧基、(環己基)(乙氧基)甲氧基、(環己基)(正丙氧基)甲氧基、(環己基)(異丙氧基)甲氧基、(環己基)(環己氧基)甲氧基、(環己基)(苯氧基)甲氧基、(環己基)(苄氧基)甲氧基、(苯基)(甲氧基)甲氧基、(苯基)(乙氧基)甲氧基、(苯基)(正丙氧基)甲氧基、(苯基)(異丙氧基)甲氧基、(苯基)(環己氧基)甲氧基、(苯基)(苯氧基)甲氧基、(苯基)(苄氧基)甲氧基、(苄基)(甲氧基)甲氧基、(苄基)(乙氧基)甲氧基、(苄基)(正丙氧基)甲氧基、(苄基)(異丙氧基)甲氧基、(苄基)(環己氧基)甲氧基、(苄基)(苯氧基)甲氧基、(苄基)(苄氧基)甲氧基、2-四氫呋喃基氧基、2-四氫吡喃基氧基、1-三甲基矽烷基氧基乙氧基、1-三甲基鍺烷基氧基乙氧基等。 The functional group which should become an acetal structure by bonding to the above other carbon atoms may, for example, be 1-methoxyethoxy, 1-ethoxyethoxy or 1-n-propoxyethoxy , 1-isopropoxyethoxy, 1-n-butoxyethoxy, 1-isobutoxyethoxy, 1-second butoxyethoxy, 1-tert-butoxy Ethoxy, 1-cyclopentyloxyethoxy, 1-cyclohexyloxyethoxy, 1-norbornyloxyethoxy, 1-bornelipyloxyethoxy, 1-phenoxy Ethoxy, 1-(1-naphthyloxy)ethoxy, 1-benzyloxyethoxy, 1-phenylethoxyethoxy, (cyclohexyl)(methoxy)methoxy, Cyclohexyl)(ethoxy)methoxy, (cyclohexyl)(n-propoxy)methoxy, (cyclohexyl)(isopropoxy)methoxy, (cyclohexyl)(cyclohexyloxy) Methoxy, (cyclohexyl)(phenoxy)methoxy, (cyclohexyl)(benzyloxy)methoxy, (phenyl)(methoxy)methoxy, (phenyl)(ethoxy) Methoxy, (phenyl) (n-propoxy) methoxy, (phenyl) (isopropoxy) methoxy, (phenyl) (cyclohexyloxy) methoxy, (benzene (phenoxy)methoxy, (phenyl)(benzyloxy)methoxy, (benzyl) (methoxy)methoxy, (benzyl)(ethoxy)methoxy, (benzyl)(n-propoxy)methoxy, (benzyl)(isopropoxy)methoxy, (benzyl)(cyclohexyloxy)methoxy, (benzyl)(phenoxy)methoxy, (benzyl)(benzyloxy)methoxy, 2-tetrahydrofuranyloxy, 2-tetra Hydropyranyloxy, 1-trimethyldecyloxyethoxy, 1-trimethyldecyloxyethoxy, and the like.
這些基中可列舉1-乙氧基乙氧基、1-環己氧基乙氧基、2-四氫吡喃基氧基、1-正丙氧基乙氧基作為優選的基。 Among these, a 1-ethoxyethoxy group, a 1-cyclohexyloxyethoxy group, a 2-tetrahydropyranyloxy group, and a 1-n-propoxyethoxy group are mentioned as a preferable group.
藉由與上述其他碳原子鍵結而變得具有縮酮結構的官能基例如可列舉1-甲基-1-甲氧基乙氧基、1-甲基-1-乙氧 基乙氧基、1-甲基-1-正丙氧基乙氧基、1-甲基-1-異丙氧基乙氧基、1-甲基-1-正丁氧基乙氧基、1-甲基-1-異丁氧基乙氧基、1-甲基-1-第二丁氧基乙氧基、1-甲基-1-第三丁氧基乙氧基、1-甲基-1-環戊氧基乙氧基、1-甲基-1-環己氧基乙氧基、1-甲基-1-降冰片基氧基乙氧基、1-甲基-1-冰片基氧基乙氧基、1-甲基-1-苯氧基乙氧基、1-甲基-1-(1-萘氧基)乙氧基、1-甲基-1-苄氧基乙氧基、1-甲基-1-苯乙氧基乙氧基、1-環己基-1-甲氧基乙氧基、1-環己基-1-乙氧基乙氧基、1-環己基-1-正丙氧基乙氧基、1-環己基-1-異丙氧基乙氧基、1-環己基-1-環己氧基乙氧基、1-環己基-1-苯氧基乙氧基、1-環己基-1-苄氧基乙氧基、1-苯基-1-甲氧基乙氧基、1-苯基-1-乙氧基乙氧基、1-苯基-1-正丙氧基乙氧基、1-苯基-1-異丙氧基乙氧基、1-苯基-1-環己氧基乙氧基、1-苯基-1-苯氧基乙氧基、1-苯基-1-苄氧基乙氧基、1-苄基-1-甲氧基乙氧基、1-苄基-1-乙氧基乙氧基、1-苄基-1-正丙氧基乙氧基、1-苄基-1-異丙氧基乙氧基、1-苄基-1-環己氧基乙氧基、1-苄基-1-苯氧基乙氧基、1-苄基-1-苄氧基乙氧基、2-(2-甲基-四氫呋喃基)氧基、2-(2-甲基-四氫吡喃基)氧基、1-甲氧基-環戊氧基、1-甲氧基-環己氧基等。 Examples of the functional group having a ketal structure by bonding with the above other carbon atoms include 1-methyl-1-methoxyethoxy group and 1-methyl-1-ethoxy group. Ethyloxy, 1-methyl-1-n-propoxyethoxy, 1-methyl-1-isopropoxyethoxy, 1-methyl-1-n-butoxyethoxy, 1-methyl-1-isobutoxyethoxy, 1-methyl-1-butoxyethoxy, 1-methyl-1-butoxyethoxy, 1-methyl -1-cyclopentyloxyethoxy, 1-methyl-1-cyclohexyloxyethoxy, 1-methyl-1-norbornyloxyethoxy, 1-methyl-1- Borneol oxyethoxy, 1-methyl-1-phenoxyethoxy, 1-methyl-1-(1-naphthalenyloxy)ethoxy, 1-methyl-1-benzyloxy Ethoxy, 1-methyl-1-phenylethoxyethoxy, 1-cyclohexyl-1-methoxyethoxy, 1-cyclohexyl-1-ethoxyethoxy, 1-ring Hexyl-1-n-propoxyethoxy, 1-cyclohexyl-1-isopropoxyethoxy, 1-cyclohexyl-1-cyclohexyloxyethoxy, 1-cyclohexyl-1-benzene Oxyethoxy, 1-cyclohexyl-1-benzyloxyethoxy, 1-phenyl-1-methoxyethoxy, 1-phenyl-1-ethoxyethoxy, 1- Phenyl-1-n-propoxyethoxy, 1-phenyl-1-isopropoxyethoxy, 1-phenyl-1-cyclohexyloxyethoxy, 1-phenyl-1- Phenoxyethoxy, 1-phenyl-1-benzyloxyethoxy 1-benzyl-1-methoxyethoxy, 1-benzyl-1-ethoxyethoxy, 1-benzyl-1-n-propoxyethoxy, 1-benzyl-1- Isopropoxyethoxy, 1-benzyl-1-cyclohexyloxyethoxy, 1-benzyl-1-phenoxyethoxy, 1-benzyl-1-benzyloxyethoxy , 2-(2-methyl-tetrahydrofuranyl)oxy, 2-(2-methyl-tetrahydropyranyl)oxy, 1-methoxy-cyclopentyloxy, 1-methoxy-cyclic Hexyloxy and the like.
這些基中可列舉1-甲基-1-甲氧基乙氧基、1-甲基-1-環己氧基乙氧基作為優選的基。 Among these, 1-methyl-1-methoxyethoxy group and 1-methyl-1-cyclohexyloxyethoxy group are mentioned as a preferable group.
上述具有縮醛結構或縮酮結構的結構單元(1)的具體例例如可列舉下述式(1-1)~式(1-3)所表示的結構單元。 Specific examples of the structural unit (1) having an acetal structure or a ketal structure include, for example, structural units represented by the following formulas (1-1) to (1-3).
在上述式(1-1)及式(1-3)中,R'是氫原子或甲基。R1、R2及R3與上述式(1)的說明同義。 In the above formula (1-1) and formula (1-3), R' is a hydrogen atom or a methyl group. R 1 , R 2 and R 3 are synonymous with the description of the above formula (1).
提供上述式(1-1)~式(1-3)所表示的結構單元(1)的具有自由基聚合性的單體(以下亦簡稱為“含有縮醛結構的單體”)例如可列舉:(甲基)丙烯酸-1-烷氧基烷基酯、(甲基)丙烯酸-1-(環烷氧基)烷基酯、(甲基)丙烯酸-1-(鹵代烷氧基)烷基酯、(甲基)丙烯酸-1-(芳烷氧基)烷基酯、(甲基)丙烯酸四氫吡喃基酯等(甲基)丙烯酸酯類含有縮醛結構的單體;2,3-二(1-(三烷基矽烷基氧基)烷氧基)羰基)-5-降冰片烯、2,3-二(1-(三烷基鍺烷基氧基)烷氧基)羰基)-5-降冰片烯、2,3-二(1-烷氧基烷氧基羰基)-5-降冰片烯、2,3-二(1-(環烷氧基)烷氧基羰基)-5-降冰片烯、2,3-二(1-(芳烷氧基)烷氧基羰基)-5-降冰片烯等降冰片烯類含有縮醛結構的單體;1-烷氧基烷氧基苯乙烯、1-(鹵代烷氧基)烷氧基苯乙烯、1-(芳烷氧基)烷氧基苯乙烯、四氫吡喃基氧基苯乙烯等苯乙烯類含有縮醛結構的單體。 The monomer having a radical polymerizable property (hereinafter also simply referred to as "a monomer having an acetal structure") of the structural unit (1) represented by the above formula (1-1) to formula (1-3), for example, may be mentioned : (meth)acrylic acid-1-alkoxyalkyl ester, (meth)acrylic acid-1-(cycloalkoxy)alkyl ester, (meth)acrylic acid-1-(haloalkoxy)alkyl ester (meth)acrylic acid esters such as (meth)acrylic acid-1-(aralkyloxy)alkyl ester and (meth)acrylic acid tetrahydropyranyl ester containing acetal structure; 2,3- Bis(1-(trialkylsulfonyloxy)alkoxy)carbonyl)-5-norbornene, 2,3-bis(1-(trialkylsulfonyloxy)alkoxy)carbonyl) -5-norbornene, 2,3-bis(1-alkoxyalkoxycarbonyl)-5-norbornene, 2,3-bis(1-(cycloalkoxy)alkoxycarbonyl)- 5-norbornene, 2,3-bis(1-(aralkyloxy)alkoxycarbonyl)-5-norbornene and the like norbornene-containing monomer having an acetal structure; 1-alkoxy alkane Styrenes such as oxystyrene, 1-(haloalkoxy)alkoxystyrene, 1-(aralkyloxy)alkoxystyrene, tetrahydropyranyloxystyrene, etc. containing an acetal structure monomer.
這些化合物中優選(甲基)丙烯酸-1-烷氧基烷基酯、(甲 基)丙烯酸四氫吡喃基酯、1-烷氧基烷氧基苯乙烯、四氫吡喃基氧基苯乙烯,更優選(甲基)丙烯酸-1-烷氧基烷基酯。 Among these compounds, (meth)acrylic acid-1-alkoxyalkyl ester, (A) Tetrahydropyranyl acrylate, 1-alkoxyalkoxystyrene, tetrahydropyranyloxystyrene, more preferably 1-alkyloxyalkyl (meth)acrylate.
提供上述結構單元(1)的含有縮醛結構的單體的具體例例如可列舉:甲基丙烯酸-1-乙氧基乙酯、甲基丙烯酸-1-甲氧基乙酯、甲基丙烯酸-1-正丁氧基乙酯、甲基丙烯酸-1-異丁氧基乙酯、甲基丙烯酸-1-第三丁氧基乙酯、甲基丙烯酸-1-(2-氯乙氧基)乙酯、甲基丙烯酸-1-(2-乙基己氧基)乙酯、甲基丙烯酸-1-正丙氧基乙酯、甲基丙烯酸-1-環己氧基乙酯、甲基丙烯酸-1-(2-環己基乙氧基)乙酯、甲基丙烯酸-1-苄氧基乙酯、甲基丙烯酸-2-四氫吡喃基酯;丙烯酸-1-乙氧基乙酯、丙烯酸-1-甲氧基乙酯、丙烯酸-1-正丁氧基乙酯、丙烯酸-1-異丁氧基乙酯、丙烯酸-1-第三丁氧基乙酯、丙烯酸-1-(2-氯乙氧基)乙酯、丙烯酸-1-(2-乙基己氧基)乙酯、丙烯酸-1-正丙氧基乙酯、丙烯酸-1-環己氧基乙酯、丙烯酸-1-(2-環己基乙氧基)乙酯、丙烯酸-1-苄氧基乙酯、丙烯酸-2-四氫吡喃基酯;2,3-二(1-(三甲基矽烷基氧基)乙氧基)羰基)-5-降冰片烯、2,3-二(1-(三甲基鍺烷基氧基)乙氧基)羰基)-5-降冰片烯、2,3-二(1-甲氧基乙氧基羰基)-5-降冰片烯、2,3-二(1-(環己氧基)乙氧基羰基)-5-降冰片烯、2,3-二(1-(苄氧基)乙氧基羰基)-5-降冰片烯;對或間-1-乙氧基乙氧基苯乙烯、對或間-1-甲氧基乙氧基苯乙烯、對或間-1-正丁氧基乙氧基苯乙烯、對或間-1-異丁氧基乙氧基苯乙烯、對或間-1-(1,1-二甲基乙氧基)乙氧 基苯乙烯、對或間-1-(2-氯乙氧基)乙氧基苯乙烯、對或間-1-(2-乙基己氧基)乙氧基苯乙烯、對或間-1-正丙氧基乙氧基苯乙烯、對或間-1-環己氧基乙氧基苯乙烯、對或間-1-(2-環己基乙氧基)乙氧基苯乙烯、對或間-1-苄氧基乙氧基苯乙烯等。 Specific examples of the acetal structure-containing monomer which provides the above structural unit (1) include, for example, 1-ethoxyethyl methacrylate, 1-methoxyethyl methacrylate, and methacrylic acid. 1-n-butoxyethyl ester, 1-isobutoxyethyl methacrylate, 1-tert-butoxyethyl methacrylate, 1-(2-chloroethoxy) methacrylate Ethyl ester, 1-(2-ethylhexyloxy)ethyl methacrylate, 1-n-propoxyethyl methacrylate, 1-cyclohexyloxyethyl methacrylate, methacrylic acid 1-(2-cyclohexylethoxy)ethyl ester, 1-benzyloxyethyl methacrylate, 2-tetrahydropyranyl methacrylate; 1-ethoxyethyl acrylate, 1-methoxyethyl acrylate, 1-n-butoxyethyl acrylate, 1-isobutoxyethyl acrylate, 1-tert-butoxyethyl acrylate, Acrylic-1-(2) -Chloroethoxy)ethyl ester, 1-(2-ethylhexyloxy)ethyl acrylate, 1-n-propoxyethyl acrylate, 1-cyclohexyloxyethyl acrylate, Acrylic acid-1 -(2-cyclohexylethoxy)ethyl ester, 1-benzyloxyethyl acrylate, 2-tetrahydropyranyl acrylate; 2,3-di(1-(tri-) Nonyloxy)ethoxy)carbonyl)-5-norbornene, 2,3-bis(1-(trimethyldecyloxy)ethoxy)carbonyl)-5-norbornene, 2 , 3-bis(1-methoxyethoxycarbonyl)-5-norbornene, 2,3-bis(1-(cyclohexyloxy)ethoxycarbonyl)-5-norbornene, 2, 3-bis(1-(benzyloxy)ethoxycarbonyl)-5-norbornene; p- or m-ethoxyethoxy styrene, p- or m--1-methoxyethoxy Styrene, p- or m--1-n-butoxyethoxystyrene, p- or m--1-isobutoxyethoxystyrene, p- or m-(1,1-dimethyl B Oxygen) Styrene, p- or m-(2-chloroethoxy)ethoxystyrene, p- or m-(2-ethylhexyloxy)ethoxystyrene, p- or m--1 - n-propoxyethoxystyrene, p- or m-hexacyclohexyloxyethoxystyrene, p- or m-(2-cyclohexylethoxy)ethoxystyrene, or Between 1-benzyloxyethoxystyrene and the like.
上述結構單元(1)可使用1種或者將2種以上組合使用。 The above structural unit (1) may be used alone or in combination of two or more.
提供上述結構單元(1)的含有縮醛結構的單體中優選甲基丙烯酸-1-乙氧基乙酯、甲基丙烯酸-1-正丁氧基乙酯、甲基丙烯酸-2-四氫吡喃基酯、甲基丙烯酸-1-苄氧基乙酯。 Among the monomers containing the acetal structure of the above structural unit (1), 1-ethoxyethyl methacrylate, 1-n-butoxyethyl methacrylate, and 2-tetrahydro methacrylate are preferable. Pyranyl ester, 1-benzyloxyethyl methacrylate.
提供結構單元(1)的含有縮醛結構的單體可使用市售的化合物,也可以使用以公知的方法而合成的化合物。例如,提供上述式(1-1)所表示的結構單元(1)的含有縮醛結構的單體可藉由如下所述那樣在酸催化劑的存在下使(甲基)丙烯酸與乙烯醚反應而合成。 A commercially available compound can be used as the monomer having the acetal structure of the structural unit (1), and a compound synthesized by a known method can also be used. For example, the monomer containing the acetal structure of the structural unit (1) represented by the above formula (1-1) can be reacted with vinyl ether by the (meth)acrylic acid in the presence of an acid catalyst as described below. synthesis.
(在式中,R'、R1及R3分別與上述式(1-1)中的R'、R1及R3對應,R5及R6作為-CH(R5)(R6)而與上述式(1-1) 中的R2對應) (In the formula, R ', R 1 and R 3 respectively in the above formula (1-1) R', R 1 and R 3 corresponds, R 5 and R 6 as a -CH (R 5) (R 6 ) And corresponds to R 2 in the above formula (1-1))
作為[A]聚合物中的結構單元(1)的含量,只要[A]聚合物由於酸而顯示鹼溶性、從而發揮硬化膜的所期望的耐熱性,則並無特別限定,在一聚合物分子中包含結構單元(1)與含有環氧基的結構單元的情況下,相對於[A]聚合物中所含的所有結構單元而言,以單體投入比計而言優選為5質量%~70質量%,更優選為10質量%~60質量%,特別優選為20質量%~50質量%。 The content of the structural unit (1) in the [A] polymer is not particularly limited as long as the [A] polymer exhibits alkali solubility due to an acid and exhibits desired heat resistance of the cured film. When the structural unit (1) and the structural unit containing an epoxy group are contained in the molecule, it is preferably 5% by mass based on the monomer input ratio with respect to all the structural units contained in the [A] polymer. ~70% by mass, more preferably 10% by mass to 60% by mass, particularly preferably 20% by mass to 50% by mass.
另外,於一聚合物分子中具有結構單元(1),且於另一聚合物分子中具有含有環氧基的結構單元的情況下,作為具有結構單元(1)的一聚合物分子中的結構單元(1)的含量,相對於該聚合物分子中所含的所有結構單元而言,以單體投入比計而言,優選為40質量%~99質量%,更優選為50質量%~98質量%以下,特別優選為55質量%~95質量%。 Further, in the case where the polymer unit has the structural unit (1) and the other polymer molecule has the structural unit containing the epoxy group, the structure in a polymer molecule having the structural unit (1) The content of the unit (1) is preferably 40% by mass to 99% by mass, and more preferably 50% by mass to 98% by mass based on the monomer input ratio of all the structural units contained in the polymer molecule. The mass% or less is particularly preferably from 55% by mass to 95% by mass.
[A]聚合物具有上述結構單元(1)以及含有環氧基的結構單元。含有環氧基的結構單元是源自具有自由基聚合性的含有環氧基的單體的結構單元,且含有環氧基。該環氧基可列舉環氧乙烷基(1,2-環氧結構)、環氧丙烷基(1,3-環氧結構)。藉由使[A]聚合物在分子中具有包含環氧乙烷基或環氧丙烷基等的結構單元,可提高由本實施形態的感放射線性樹脂組成物而所得的絕緣膜的硬度而進一步提高耐熱性。 The [A] polymer has the above structural unit (1) and a structural unit containing an epoxy group. The structural unit containing an epoxy group is a structural unit derived from an epoxy group-containing monomer having a radical polymerizable property, and contains an epoxy group. Examples of the epoxy group include an oxiranyl group (1,2-epoxy structure) and an propylene oxide group (1,3-epoxy structure). When the [A] polymer has a structural unit containing an oxirane group or an oxypropylene group in the molecule, the hardness of the insulating film obtained by the radiation sensitive resin composition of the present embodiment can be further improved. Heat resistance.
提供上述含有環氧基的結構單元的含有環氧基的單體的具體例例如可列舉丙烯酸縮水甘油酯、甲基丙烯酸縮水甘油酯、丙烯酸-3,4-環氧丁基酯、甲基丙烯酸-3,4-環氧丁基酯、丙烯酸-3-甲基-3,4-環氧丁基酯、甲基丙烯酸-3-乙基-3,4-環氧丁基酯、丙烯酸-5,6-環氧己基酯、甲基丙烯酸-5,6-環氧己基酯、甲基丙烯酸-5-甲基-5,6-環氧己基酯、甲基丙烯酸-5-乙基-5,6-環氧己基酯、丙烯酸-6,7-環氧庚基酯、甲基丙烯酸-6,7-環氧庚基酯;甲基丙烯酸-3,4-環氧環己基酯、甲基丙烯酸-3,4-環氧環己基甲酯、甲基丙烯酸-3,4-環氧環己基乙酯、甲基丙烯酸-3,4-環氧環己基丙酯、甲基丙烯酸-3,4-環氧環己基丁酯、甲基丙烯酸-3,4-環氧環己基己酯、丙烯酸-3,4-環氧環己基酯、丙烯酸-3,4-環氧環己基甲酯、丙烯酸-3,4-環氧環己基乙酯、丙烯酸-3,4-環氧環己基丙酯、丙烯酸-3,4-環氧環己基丁酯、丙烯酸-3,4-環氧環己基己酯等含有環氧乙烷基的(甲基)丙烯酸類化合物;鄰乙烯基苄基縮水甘油醚、間乙烯基苄基縮水甘油醚、對乙烯基苄基縮水甘油醚、α-甲基-鄰乙烯基苄基縮水甘油醚、α-甲基-間乙烯基苄基縮水甘油醚、α-甲基-對乙烯基苄基縮水甘油醚等乙烯基苄基縮水甘油醚類;鄰乙烯基苯基縮水甘油醚、間乙烯基苯基縮水甘油醚、對乙烯基苯基縮水甘油醚等乙烯基苯基縮水甘油醚類;3-(丙烯醯氧基甲基)環氧丙烷、3-(丙烯醯氧基甲基)-3-甲基環氧丙烷、3-(丙烯醯氧基甲基)-3-乙基環氧丙烷、3-(丙 烯醯氧基甲基)-3-苯基環氧丙烷、3-(2-丙烯醯氧基乙基)環氧丙烷、3-(2-丙烯醯氧基乙基)-3-乙基環氧丙烷、3-(2-丙烯醯氧基乙基)-3-乙基環氧丙烷、3-(2-丙烯醯氧基乙基)-3-苯基環氧丙烷;3-(甲基丙烯醯氧基甲基)環氧丙烷、3-(甲基丙烯醯氧基甲基)-3-甲基環氧丙烷、3-(甲基丙烯醯氧基甲基)-3-乙基環氧丙烷、3-(甲基丙烯醯氧基甲基)-3-苯基環氧丙烷、3-(2-甲基丙烯醯氧基乙基)環氧丙烷、3-(2-甲基丙烯醯氧基乙基)-3-乙基環氧丙烷、3-(2-甲基丙烯醯氧基乙基)-3-乙基環氧丙烷、3-(2-甲基丙烯醯氧基乙基)-3-苯基環氧丙烷;2-(丙烯醯氧基甲基)環氧丙烷、2-(丙烯醯氧基甲基)-2-甲基環氧丙烷、2-(丙烯醯氧基甲基)-2-乙基環氧丙烷、2-(丙烯醯氧基甲基)-2-苯基環氧丙烷、2-(2-丙烯醯氧基乙基)環氧丙烷、2-(2-丙烯醯氧基乙基)-2-乙基環氧丙烷、2-(2-丙烯醯氧基乙基)-2-苯基環氧丙烷;2-(甲基丙烯醯氧基甲基)環氧丙烷、2-(甲基丙烯醯氧基甲基)-2-甲基環氧丙烷、2-(甲基丙烯醯氧基甲基)-2-乙基環氧丙烷、2-(甲基丙烯醯氧基甲基)-2-苯基環氧丙烷、2-(2-甲基丙烯醯氧基乙基)環氧丙烷、2-(2-甲基丙烯醯氧基乙基)-2-乙基環氧丙烷、2-(2-甲基丙烯醯氧基乙基)-2-乙基環氧丙烷、2-(2-甲基丙烯醯氧基乙基)-2-苯基環氧丙烷等含有環氧丙烷基的(甲基)丙烯酸類化合物等。上述含有環氧基的結構單元可單獨使用或者將2種以上組合使用。 Specific examples of the epoxy group-containing monomer which provides the epoxy group-containing structural unit include, for example, glycidyl acrylate, glycidyl methacrylate, 3,4-epoxybutyl acrylate, and methacrylic acid. -3,4-epoxybutyl ester, 3-methyl-3,4-epoxybutyl acrylate, 3-ethyl-3,4-epoxybutyl methacrylate, acrylic acid-5 , 6-epoxyhexyl ester, 5,6-epoxyhexyl methacrylate, 5-methyl-5,6-epoxyhexyl methacrylate, 5-ethyl-5 methacrylate, 6-epoxyhexyl ester, acrylate-6,7-epoxyheptyl ester, -6,7-epoxyheptyl methacrylate; 3,4-epoxycyclohexyl methacrylate, methacrylic acid -3,4-epoxycyclohexylmethyl ester, 3,4-epoxycyclohexylethyl methacrylate, 3,4-epoxycyclohexyl propyl methacrylate, methacrylic acid-3,4- Epoxy cyclohexyl butyl acrylate, 3,4-epoxycyclohexyl methacrylate, 3,4-epoxycyclohexyl acrylate, 3,4-epoxycyclohexyl methyl acrylate, acrylic acid-3 , 4-epoxycyclohexylethyl ester, 3,4-epoxycyclohexyl propyl acrylate, 3,4-epoxycyclohexyl butyl acrylate, C An oxiranyl group-containing (meth)acrylic compound such as acid-3,4-epoxycyclohexylhexyl ester; o-vinylbenzyl glycidyl ether, m-vinylbenzyl glycidyl ether, p-vinylbenzyl Glycidyl ether, α-methyl-o-vinylbenzyl glycidyl ether, α-methyl-m-vinylbenzyl glycidyl ether, α-methyl-p-vinylbenzyl glycidyl ether, etc. Glycidyl ethers; vinyl vinyl glycidyl ethers such as o-vinylphenyl glycidyl ether, m-vinylphenyl glycidyl ether, p-vinylphenyl glycidyl ether; 3-(acryloyloxymethyl) Propylene oxide, 3-(acryloxymethyl)-3-methyl propylene oxide, 3-(acryloxymethyl)-3-ethyl propylene oxide, 3-(propyl Benzeneoxymethyl)-3-phenyl propylene oxide, 3-(2-propenyloxyethyl) propylene oxide, 3-(2-propenyloxyethyl)-3-ethyl ring Oxypropane, 3-(2-propenyloxyethyl)-3-ethyl propylene oxide, 3-(2-propenyloxyethyl)-3-phenyl propylene oxide; 3-(methyl Propylene methoxymethyl) propylene oxide, 3-(methacryloxymethyl)-3-methyl propylene oxide, 3-(methacryloxymethyl)-3-ethyl ring Oxypropane, 3-(methacryloxymethyl)-3-phenyl propylene oxide, 3-(2-methylpropenyloxyethyl) propylene oxide, 3-(2-methyl propylene醯oxyethyl)-3-ethyl propylene oxide, 3-(2-methylpropenyloxyethyl)-3-ethyl propylene oxide, 3-(2-methacryloxyloxyethyl) 3-phenylpropene oxide; 2-(acryloxymethyl) propylene oxide, 2-(acryloxymethyl)-2-methyl propylene oxide, 2-(propylene oxime) Methyl)-2-ethyl propylene oxide, 2-(acryloxymethyl)-2-phenyl propylene oxide, 2-(2-propenyl methoxyethyl) propylene oxide, 2- (2-propenyloxyethyl)-2-ethyl propylene oxide, 2-(2-propenyl methoxyethyl)-2-phenyl propylene oxide; -(methacryloxymethyl) propylene oxide, 2-(methacryloxymethyl)-2-methyl propylene oxide, 2-(methacryloxymethyl)-2 -ethyl propylene oxide, 2-(methacryloxymethyl)-2-phenyl propylene oxide, 2-(2-methylpropenyloxyethyl) propylene oxide, 2-(2 -Methyl propylene methoxyethyl)-2-ethyl propylene oxide, 2-(2-methylpropenyloxyethyl)-2-ethyl propylene oxide, 2-(2-methyl propylene A (meth)acrylic compound containing an oxypropylene group such as methoxyethyl)-2-phenyl propylene oxide. The above epoxy group-containing structural unit may be used singly or in combination of two or more.
自使與其他自由基聚合性單體的共聚反應性、及感放 射線性樹脂組成物的顯影性良好的觀點考慮,上述含有環氧基的單體中優選甲基丙烯酸縮水甘油酯、甲基丙烯酸-2-甲基縮水甘油酯、甲基丙烯酸-3,4-環氧基環己基酯、甲基丙烯酸-3,4-環氧環己基甲酯、3-(甲基丙烯醯氧基甲基)-3-甲基環氧丙烷、3-(甲基丙烯醯氧基甲基)-3-乙基環氧丙烷。 Self-coupling reactivity with other radical polymerizable monomers, and sensing From the viewpoint of good developability of the radioactive resin composition, among the above epoxy group-containing monomers, glycidyl methacrylate, -2-methylglycidyl methacrylate, and methacrylic acid-3,4- are preferable. Epoxycyclohexyl ester, 3,4-epoxycyclohexylmethyl methacrylate, 3-(methacryloxymethyl)-3-methyl propylene oxide, 3-(methacryl oxime) Oxymethyl)-3-ethyl propylene oxide.
作為[A]聚合物中的含有環氧基的結構單元的含量,只要可發揮絕緣膜的所期望的耐熱性則並無特別限定,在一聚合物分子中包含結構單元(1)與含有環氧基的結構單元的情況下,相對於[A]聚合物中所含的所有結構單元而言,以單體投入比計而言優選為10質量%以上60質量%以下,更優選為15質量%以上55質量%以下,特別優選為20質量%以上50質量%以下。 The content of the epoxy group-containing structural unit in the [A] polymer is not particularly limited as long as the desired heat resistance of the insulating film is exhibited, and the structural unit (1) and the containing ring are contained in one polymer molecule. In the case of the structural unit of the oxy group, it is preferably 10% by mass or more and 60% by mass or less, more preferably 15% by mass based on the monomer input ratio of all the structural units contained in the [A] polymer. % or more is 55% by mass or less, and particularly preferably 20% by mass or more and 50% by mass or less.
另一方面,在一聚合物分子中具有結構單元(1),且在另一聚合物分子中具有含有環氧基的結構單元的情況下,作為在具有含有環氧基的結構單元的一聚合物分子中所含的含有環氧基的結構單元相對於所有結構單元的含量,以單體投入比計而言優選為10質量%以上80質量%以下,更優選為20質量%以上70質量%以下,特別優選為25質量%以上60質量%以下。 On the other hand, in the case of having a structural unit (1) in one polymer molecule and having a structural unit containing an epoxy group in another polymer molecule, as a polymerization in a structural unit having an epoxy group The content of the epoxy group-containing structural unit contained in the molecule is preferably 10% by mass or more and 80% by mass or less, more preferably 20% by mass or more and 70% by mass based on the monomer input ratio. Hereinafter, it is particularly preferably 25% by mass or more and 60% by mass or less.
提供其他結構單元的自由基聚合性單體可列舉具有羧基或其衍生物、羥基的自由基聚合性單體等。 Examples of the radical polymerizable monomer which provides another structural unit include a radical polymerizable monomer having a carboxyl group or a derivative thereof and a hydroxyl group.
上述具有羧基或其衍生物的自由基聚合性單體可列舉丙烯酸、甲基丙烯酸、丁烯酸、2-丙烯醯氧基乙基琥珀 酸、2-甲基丙烯醯氧基乙基琥珀酸、2-丙烯醯氧基乙基六氫鄰苯二甲酸、2-甲基丙烯醯氧基乙基六氫鄰苯二甲酸等單羧酸;馬來酸、富馬酸、檸康酸、中康酸、衣康酸等二羧酸;上述二羧酸的酸酐等。 The above radical polymerizable monomer having a carboxyl group or a derivative thereof may, for example, be acrylic acid, methacrylic acid, crotonic acid or 2-propenyloxyethyl amber. Monocarboxylic acid such as acid, 2-methylpropenyloxyethyl succinic acid, 2-propenyloxyethylhexahydrophthalic acid, 2-methylpropenyloxyethylhexahydrophthalic acid a dicarboxylic acid such as maleic acid, fumaric acid, citraconic acid, mesaconic acid or itaconic acid; an acid anhydride of the above dicarboxylic acid;
上述具有羥基的自由基聚合性單體的例子可列舉丙烯酸-2-羥基乙酯、丙烯酸-3-羥基丙酯、丙烯酸-4-羥基丁酯、丙烯酸-4-羥基甲基環己基甲酯等丙烯酸羥基烷基酯;甲基丙烯酸-2-羥基乙酯、甲基丙烯酸-3-羥基丙酯、甲基丙烯酸-4-羥基基丁酯、甲基丙烯酸-5-羥基戊酯、甲基丙烯酸-6-羥基己酯、甲基丙烯酸-4-羥基甲基-環己基甲酯等甲基丙烯酸羥基烷基酯等。 Examples of the radical polymerizable monomer having a hydroxyl group include 2-hydroxyethyl acrylate, 3-hydroxypropyl acrylate, 4-hydroxybutyl acrylate, 4-hydroxymethylcyclohexyl methyl acrylate, and the like. Hydroxyalkyl acrylate; 2-hydroxyethyl methacrylate, 3-hydroxypropyl methacrylate, 4-hydroxybutyl methacrylate, 5-hydroxypentyl methacrylate, methacrylic acid a hydroxyalkyl methacrylate such as -6-hydroxyhexyl ester or 4-hydroxymethyl-cyclohexylmethyl methacrylate.
自與其他自由基聚合性單體的共聚反應性及所得的層間絕緣膜等的耐熱性的觀點考慮,這些具有羥基的自由基聚合性單體中優選丙烯酸-2-羥基乙酯、丙烯酸-3-羥基丙酯、丙烯酸-4-羥基丁酯、甲基丙烯酸-2-羥基乙酯、甲基丙烯酸-4-羥基丁酯、丙烯酸-4-羥基甲基-環己基甲酯、甲基丙烯酸-4-羥基甲基-環己基甲酯。 Among these radically polymerizable monomers having a hydroxyl group, 2-hydroxyethyl acrylate and acrylic acid-3 are preferable from the viewpoints of copolymerization reactivity with other radical polymerizable monomers and heat resistance of the obtained interlayer insulating film. -hydroxypropyl ester, 4-hydroxybutyl acrylate, 2-hydroxyethyl methacrylate, 4-hydroxybutyl methacrylate, 4-hydroxymethyl-cyclohexyl methyl acrylate, methacrylic acid - 4-hydroxymethyl-cyclohexylmethyl ester.
其他自由基聚合性單體的例子可列舉丙烯酸甲酯、丙烯酸異丙酯等丙烯酸烷基酯;甲基丙烯酸甲酯、甲基丙烯酸乙酯、甲基丙烯酸正丁酯、甲基丙烯酸第二丁酯、甲基丙烯酸第三丁酯等甲基丙烯酸烷基酯;丙烯酸環己酯、丙烯酸-2-甲基環己酯、丙烯酸三環[5.2.1.02,6]癸烷-8-基酯、丙烯酸-2-(三環[5.2.1.02,6]癸烷-8-基氧基)乙酯、丙烯酸異冰片酯等丙烯酸脂環族烷 基酯;甲基丙烯酸環己酯、甲基丙烯酸-2-甲基環己酯、甲基丙烯酸三環[5.2.1.02,6]癸烷-8-基酯、甲基丙烯酸-2-(三環[5.2.1.02,6]癸烷-8-基氧基)乙酯、甲基丙烯酸異冰片酯等甲基丙烯酸脂環族烷基酯;丙烯酸苯酯、丙烯酸苄基酯等丙烯酸的芳基酯及丙烯酸的芳烷基酯;甲基丙烯酸苯酯、甲基丙烯酸苄基酯等甲基丙烯酸的芳基酯及甲基丙烯酸的芳烷基酯;馬來酸二乙酯、富馬酸二乙酯、衣康酸二乙酯等二羧酸二烷基酯;甲基丙烯酸四氫糠基酯、甲基丙烯酸四氫呋喃基酯、甲基丙烯酸四氫吡喃-2-甲基酯等包含1個氧原子的不飽和五元雜環甲基丙烯酸酯及不飽和六元雜環甲基丙烯酸酯;4-甲基丙烯醯氧基甲基-2-甲基-2-乙基-1,3-二氧戊環、4-甲基丙烯醯氧基甲基-2-甲基-2-異丁基-1,3-二氧戊環、4-甲基丙烯醯氧基甲基-2-環己基-1,3-二氧戊環、4-甲基丙烯醯氧基甲基-2-甲基-2-乙基-1,3-二氧戊環、4-甲基丙烯醯氧基甲基-2-甲基-2-異丁基-1,3-二氧戊環等包含2個氧原子的不飽和五元雜環甲基丙烯酸酯;4-丙烯醯氧基甲基-2,2-二甲基-1,3-二氧戊環、4-丙烯醯氧基甲基-2-甲基-2-乙基-1,3-二氧戊環、4-丙烯醯氧基甲基-2,2-二乙基-1,3-二氧戊環、4-丙烯醯氧基甲基-2-甲基-2-異丁基-1,3-二氧戊環、4-丙烯醯氧基甲基-2-環戊基-1,3-二 氧戊環、4-丙烯醯氧基甲基-2-環己基-1,3-二氧戊環、4-丙烯醯氧基乙基-2-甲基-2-乙基-1,3-二氧戊環、4-丙烯醯氧基丙基-2-甲基-2-乙基-1,3-二氧戊環、4-丙烯醯氧基丁基-2-甲基-2-乙基-1,3-二氧戊環等包含2個氧原子的不飽和五元雜環丙烯酸酯;苯乙烯、α-甲基苯乙烯、間甲基苯乙烯、對甲基苯乙烯、對甲氧基苯乙烯、4-異丙烯基苯酚等乙烯基芳香族化合物;N-苯基馬來醯亞胺、N-環己基馬來醯亞胺、N-苄基馬來醯亞胺、N-琥珀醯亞胺基-3-馬來醯亞胺苯甲酸酯、N-琥珀醯亞胺基-4-馬來醯亞胺丁酸酯、N-琥珀醯亞胺基-6-馬來醯亞胺己酸酯、N-琥珀醯亞胺基-3-馬來醯亞胺丙酸酯、N-(9-吖啶基)馬來醯亞胺等N位取代馬來醯亞胺;1,3-丁二烯、異戊二烯、2,3-二甲基-1,3-丁二烯等共軛二烯類化合物;丙烯腈、甲基丙烯腈、丙烯醯胺、甲基丙烯醯胺、氯乙烯、偏二氯乙烯、乙酸乙烯酯等其他不飽和化合物。 Examples of the other radical polymerizable monomer include alkyl acrylates such as methyl acrylate and isopropyl acrylate; methyl methacrylate, ethyl methacrylate, n-butyl methacrylate, and dimethyl methacrylate. Ethyl methacrylate such as ester, butyl methacrylate; cyclohexyl acrylate, 2-methylcyclohexyl acrylate, tricyclo[5.1.02.5 2,6 ]decane-8-yl acrylate Acrylic cycloalkyl acrylate such as 2-(tricyclo[5.2.1.0 2,6 ]decane-8-yloxy)ethyl acrylate or isobornyl acrylate; cyclohexyl methacrylate, methyl 2-methylcyclohexyl acrylate, tricyclo[5.1.02.5 2,6 ]decane-8-yl methacrylate, 2-(tricyclo[5.2.1.0 2,6 ]decane methacrylate An alicyclic alkyl methacrylate such as -8-yloxy)ethyl ester or isobornyl methacrylate; an aryl ester of acrylic acid such as phenyl acrylate or benzyl acrylate; and an aralkyl ester of acrylic acid; An aryl methacrylate such as phenyl acrylate or benzyl methacrylate; and an aralkyl ester of methacrylic acid; diethyl maleate, diethyl fumarate, diethyl itaconate, etc. Dialkyl carboxylic acid; tetrahydrofurfuryl methacrylate, tetrahydrofuranyl methacrylate, tetrahydropyran-2-methyl methacrylate, etc., unsaturated five-membered heterocyclic ring containing one oxygen atom Acrylate and unsaturated six-membered heterocyclic methacrylate; 4-methylpropenyloxymethyl-2-methyl-2-ethyl-1,3-dioxolane, 4-methylpropene醯oxymethyl-2-methyl-2-isobutyl-1,3-dioxolane, 4-methylpropenyloxymethyl-2-cyclohexyl-1,3-dioxolane 4-methylpropenyloxymethyl-2-methyl-2-ethyl-1,3-dioxolane, 4-methylpropenyloxymethyl-2-methyl-2-iso Unsaturated five-membered heterocyclic methacrylate containing two oxygen atoms, such as butyl-1,3-dioxolane; 4-propenyloxymethyl-2,2-dimethyl-1,3- Dioxolane, 4-propenyloxymethyl-2-methyl-2-ethyl-1,3-dioxolane, 4-propenyloxymethyl-2,2-diethyl- 1,3-dioxolan, 4-propenyloxymethyl-2-methyl-2-isobutyl-1,3-dioxolan, 4-propenyloxymethyl-2-cyclo Pentyl-1,3-dioxolan, 4-propenyloxymethyl-2-cyclohexyl-1,3-dioxolan, 4-propene oxime Ethylethyl-2-methyl-2-ethyl-1,3-dioxolane, 4-propenyloxypropyl-2-methyl-2-ethyl-1,3-dioxolane , 4-propenyloxybutyl-2-methyl-2-ethyl-1,3-dioxolan and the like, unsaturated 5-membered heterocyclic acrylate containing 2 oxygen atoms; styrene, α-A Vinyl aromatic compounds such as styrene, m-methylstyrene, p-methylstyrene, p-methoxystyrene, 4-isopropenylphenol; N-phenylmaleimide, N-cyclohexyl Maleidin, N-benzylmaleimide, N-ammonium imino-3-maleimide benzoate, N-ammonium imino-4-malayiya Aminobutyrate, N-succinimide-6-maleimide caproate, N-succinimide-3-maleimide propionate, N-(9-acridine Substituted maleimide such as maleimide, maleimide, conjugated diene such as 1,3-butadiene, isoprene, 2,3-dimethyl-1,3-butadiene Class of compounds; other unsaturated compounds such as acrylonitrile, methacrylonitrile, acrylamide, methacrylamide, vinyl chloride, vinylidene chloride, vinyl acetate.
自使與上述具有反應官能基的自由基聚合性單體的共聚反應性、及感放射線性樹脂組成物的顯影性良好的方面考慮,這些其他自由基聚合性單體中優選苯乙烯、4-異丙烯基苯酚、甲基丙烯酸三環[5.2.1.02,6]癸烷-8-基酯、甲基丙烯酸四氫糠基酯、1,3-丁二烯、4-丙烯醯氧基甲基-2-甲基-2-乙基-1,3-二氧戊環、N-環己基馬來醯亞胺、N-苯基馬來醯亞胺、甲基丙烯酸苄基酯等。 From the viewpoints of good copolymerization reactivity with the above-mentioned radically polymerizable monomer having a reactive functional group and developability of the radiation sensitive resin composition, styrene and 4- are preferable among these other radical polymerizable monomers. Isopropenylphenol, tricyclo[cyclopropyl] methacrylate [5.2.1.0 2,6 ]decane-8-yl ester, tetrahydrofurfuryl methacrylate, 1,3-butadiene, 4-propenyloxy group Alkyl-2-methyl-2-ethyl-1,3-dioxolane, N-cyclohexylmaleimide, N-phenylmaleimide, benzyl methacrylate, and the like.
[A]聚合物的GPC(凝膠滲透層析法)聚苯乙烯換算質量平均分子量(以下稱為“Mw”)優選為2.0×103~1.0×105,更優選為5.0×103~5.0×104。藉由使[A]聚合物的Mw為上述範圍,可使本實施形態的感放射線性樹脂組成物的放射線感光度及鹼顯影性提高。 [A] GPC (gel permeation chromatography) of a polymer The polystyrene-converted mass average molecular weight (hereinafter referred to as "Mw") is preferably 2.0 × 10 3 to 1.0 × 10 5 , more preferably 5.0 × 10 3 ~ 5.0×10 4 . By setting the Mw of the [A] polymer to the above range, the radiation sensitivity and alkali developability of the radiation sensitive resin composition of the present embodiment can be improved.
而且,[A]聚合物的GPC(凝膠滲透層析法)聚苯乙烯換算數量平均分子量(以下稱為“Mn”)優選為2.0×103~1.0×105,更優選為5.0×103~5.0×104。藉由使共聚物的Mn為上述範圍,可使本實施形態的感放射線性樹脂組成物的在塗膜的硬化時的硬化反應性提高。 Further, the GPC (gel permeation chromatography) polystyrene-equivalent number average molecular weight (hereinafter referred to as "Mn") of the [A] polymer is preferably 2.0 × 10 3 to 1.0 × 10 5 , more preferably 5.0 × 10 3 ~ 5.0 × 10 4 . When the Mn of the copolymer is in the above range, the curing reactivity of the radiation-sensitive resin composition of the present embodiment at the time of curing of the coating film can be improved.
另外,[A]聚合物的分子量分佈“Mw/Mn”優選為3.0以下,更優選為2.6以下。藉由使[A]聚合物的Mw/Mn為3.0以下,可提高所得的絕緣膜等的顯影性。包含[A]聚合物的感放射線性樹脂組成物可以在顯影時不產生顯影殘留地容易地形成所期望的圖案形狀。 Further, the molecular weight distribution "Mw/Mn" of the [A] polymer is preferably 3.0 or less, and more preferably 2.6 or less. By setting the Mw/Mn of the [A] polymer to 3.0 or less, the developability of the obtained insulating film or the like can be improved. The radiation sensitive resin composition containing the [A] polymer can easily form a desired pattern shape without developing residue at the time of development.
[A]聚合物可藉由含有縮醛結構的單體、含有環氧基的單體、提供其他結構單元的單體的自由基共聚而製造。在製造於同一聚合物分子中包含結構單元(1)及含有環氧基的結構單元這兩者的[A]聚合物的情況時,使用至少包含具有縮醛結構的單體與含有環氧基的單體的混合物進行共聚即可。另一方面,在製造於一聚合物分子中具有結構單元(1)、且於與其不同的聚合物分子中具有含有環氧基的結構單元的[A]聚合物的情況下,預先使至少包含具有縮醛 結構的單體的聚合性溶液進行自由基聚合而獲得具有結構單元(1)的聚合物分子,另外使至少包含具有環氧基的單體的聚合性溶液進行自由基聚合而獲得具有含有環氧基的結構單元的聚合物分子,最後將兩者加以混合而製成[A]聚合物即可。 [A] The polymer can be produced by radical copolymerization of a monomer having an acetal structure, a monomer having an epoxy group, and a monomer providing another structural unit. In the case of producing a [A] polymer comprising both the structural unit (1) and the structural unit containing an epoxy group in the same polymer molecule, a monomer containing at least an acetal structure and an epoxy group are used. The mixture of monomers can be copolymerized. On the other hand, in the case of the [A] polymer having a structural unit (1) in a polymer molecule and having a structural unit containing an epoxy group in a polymer molecule different therefrom, at least it is included in advance. Acetal The polymerizable solution of the monomer of the structure is subjected to radical polymerization to obtain a polymer molecule having the structural unit (1), and a polymerizable solution containing at least a monomer having an epoxy group is subjected to radical polymerization to obtain an epoxy group-containing compound. The polymer molecules of the structural unit of the group are finally mixed to form the [A] polymer.
用以製造[A]聚合物的聚合反應中所使用的溶劑例如可列舉醇類、醚類、二醇醚、乙二醇烷基醚乙酸酯、二乙二醇烷基醚、丙二醇單烷基醚、丙二醇單烷基醚乙酸酯、丙二醇單烷基醚丙酸酯、芳香族烴類、酮類、其他酯類等。 Examples of the solvent used in the polymerization for producing the [A] polymer include alcohols, ethers, glycol ethers, ethylene glycol alkyl ether acetates, diethylene glycol alkyl ethers, and propylene glycol monoalkanes. Alkyl ether, propylene glycol monoalkyl ether acetate, propylene glycol monoalkyl ether propionate, aromatic hydrocarbons, ketones, other esters, and the like.
用以製造[A]聚合物的聚合反應中所使用的聚合起始劑可使用已知為自由基聚合起始劑的化合物。自由基聚合起始劑例如可列舉2,2'-偶氮雙異丁腈、2,2'-偶氮雙(2-甲基丙酸甲酯)、2,2'-偶氮雙-(2,4-二甲基戊腈)、2,2'-偶氮雙-(4-甲氧基-2,4-二甲基戊腈)等偶氮化合物;過氧化苯甲醯、過氧化月桂醯、過氧化特戊酸第三丁酯、1,1'-雙-(第三丁基過氧基)環己烷等有機過氧化物;及過氧化氫。 As the polymerization initiator used in the polymerization for producing the [A] polymer, a compound known as a radical polymerization initiator can be used. Examples of the radical polymerization initiator include 2,2'-azobisisobutyronitrile, 2,2'-azobis(methyl 2-methylpropionate), and 2,2'-azobis-( Azo compounds such as 2,4-dimethylvaleronitrile), 2,2'-azobis-(4-methoxy-2,4-dimethylvaleronitrile); benzamidine peroxide, peroxidation An organic peroxide such as laurel, third butyl peroxypivalate, 1,1'-bis-(t-butylperoxy)cyclohexane; and hydrogen peroxide.
[B]光產酸劑是可藉由照射放射線而產生酸的化合物。放射線例如可如上所述地使用可見光線、紫外線、遠紫外線、電子束、X射線等。本實施形態的感放射線性樹脂組成物可藉由包含[B]光產酸劑而發揮正型的感放射線特性,作為正型的感放射線性樹脂組成物而使用。[B]光產酸劑只要是可藉由照射放射線而產生酸(例如羧酸、磺酸等)的化合物,則並無特別限定。作為[B]光產酸劑在感放 射線性樹脂組成物中的含有形態,可以是後述的化合物的光產酸劑(以下亦稱為“[B]光產酸劑”)的形態,也可以是作為[A]聚合物或其他聚合物的一部分而導入的光產酸基的形態,也可以是這些兩者的形態。 [B] A photoacid generator is a compound which can generate an acid by irradiating radiation. For example, visible light, ultraviolet light, far ultraviolet light, electron beam, X-ray, or the like can be used as described above. The radiation sensitive resin composition of the present embodiment can be used as a positive radiation sensitive resin composition by exhibiting a positive radiation sensitivity characteristic by containing a [B] photoacid generator. [B] The photoacid generator is not particularly limited as long as it is a compound capable of generating an acid (for example, a carboxylic acid, a sulfonic acid, or the like) by irradiation with radiation. As a [B] photoacid generator in the sense The form of the radioactive resin composition may be in the form of a photoacid generator (hereinafter also referred to as "[B] photoacid generator") of a compound described later, or may be a polymer [A] or other polymerization. The form of the photoacid group introduced into a part of the substance may be in the form of both of them.
[B]光產酸劑可列舉肟磺酸酯化合物或磺醯亞胺化合物等,其中優選肟磺酸酯化合物。 The [B] photoacid generator may, for example, be an oxime sulfonate compound or a sulfonium imide compound, and among them, an oxime sulfonate compound is preferred.
上述肟磺酸酯化合物優選為含有下述式(2)所表示的肟磺酸酯基的化合物。 The oxime sulfonate compound is preferably a compound containing an oxime sulfonate group represented by the following formula (2).
在上述式(2)中,RB1是烷基、環烷基或芳基,這些基的氫原子的一部分或者全部也可以被取代基取代。 In the above formula (2), R B1 is an alkyl group, a cycloalkyl group or an aryl group, and some or all of the hydrogen atoms of these groups may be substituted with a substituent.
在上述式(2)中,RB1的烷基優選為碳數為1~10的直鏈狀或分支狀烷基。RB1的烷基亦可被碳數為1~10的烷氧基或脂環族基(包括7,7-二甲基-2-氧代降冰片基等橋接式脂環族基,優選為雙環烷基等)取代。RB1的芳基優選為碳數為6~11的芳基,更優選苯基或萘基。RB1的芳基亦可被碳數為1~5的烷基、烷氧基或鹵素原子取代。 In the above formula (2), the alkyl group of R B1 is preferably a linear or branched alkyl group having 1 to 10 carbon atoms. The alkyl group of R B1 may also be an alkoxy group or an alicyclic group having a carbon number of 1 to 10 (including a bridged alicyclic group such as a 7,7-dimethyl-2-oxonorbornyl group, preferably Substituted by a bicycloalkyl group or the like. The aryl group of R B1 is preferably an aryl group having 6 to 11 carbon atoms, more preferably a phenyl group or a naphthyl group. The aryl group of R B1 may also be substituted by an alkyl group, an alkoxy group or a halogen atom having 1 to 5 carbon atoms.
含有上述式(2)所表示的肟磺酸酯基的上述化合物更優選為下述式(3)所表示的肟磺酸酯化合物。 The above compound containing the oxime sulfonate group represented by the above formula (2) is more preferably an oxime sulfonate compound represented by the following formula (3).
在式(3)中,RB1與式(2)中的RB1的說明同義。X為烷基、烷氧基或鹵素原子。m為0~3的整數。於m為2或3時,多個X可相同亦可不同。作為X的烷基優選為碳數為1~4的直鏈狀或分支狀烷基。 In the formula (3), R B1 is synonymous with the description of R B1 in the formula (2). X is an alkyl group, an alkoxy group or a halogen atom. m is an integer from 0 to 3. When m is 2 or 3, a plurality of Xs may be the same or different. The alkyl group as X is preferably a linear or branched alkyl group having 1 to 4 carbon atoms.
在式(3)中,作為X的烷氧基優選為碳數為1~4的直鏈狀或分支狀烷氧基。作為X的鹵素原子優選為氯原子或氟原子。m優選為0或1。特別優選在式(3)中,m為1、X為甲基、X的取代位置為鄰位的化合物。 In the formula (3), the alkoxy group as X is preferably a linear or branched alkoxy group having 1 to 4 carbon atoms. The halogen atom as X is preferably a chlorine atom or a fluorine atom. m is preferably 0 or 1. Particularly preferably, in the formula (3), m is 1, and X is a methyl group, and a compound having a substitution position of X is an ortho position.
上述式(3)所表示的肟磺酸酯化合物的具體例例如可列舉下述式(3-i)~式(3-v)所分別表示的化合物(3-i)、化合物(3-ii)、化合物(3-iii)、化合物(3-iv)及化合物(3-v)等。 Specific examples of the oxime sulfonate compound represented by the above formula (3) include a compound (3-i) and a compound (3-ii) represented by the following formula (3-i) to formula (3-v), respectively. ), the compound (3-iii), the compound (3-iv), and the compound (3-v).
[化12]
這些化合物可單獨使用或者將2種以上組合使用,也可以與作為[B]成分的其他光產酸劑組合使用。上述化合物(3-i)[(5-丙基磺醯基氧基亞胺基-5H-噻吩-2-亞基)-(2-甲 基苯基)乙腈]、化合物(3-ii)[(5H-辛基磺醯基氧基亞胺基-5H-噻吩-2-亞基)-(2-甲基苯基)乙腈]、化合物(3-iii)[(樟腦磺醯基氧基亞胺基-5H-噻吩-2-亞基)-(2-甲基苯基)乙腈]、化合物(3-iv)[(5-對甲苯磺醯基氧基亞胺基-5H-噻吩-2-亞基)-(2-甲基苯基)乙腈]及化合物(3-v)[(5-辛基磺醯基氧基亞胺基)-(4-甲氧基苯基)乙腈]可以市售品的形式獲得。 These compounds may be used singly or in combination of two or more kinds thereof, or may be used in combination with other photoacid generators as the component [B]. The above compound (3-i) [(5-propylsulfonyloxyimino-5H-thiophene-2-ylidene)-(2-A Phenyl)acetonitrile], compound (3-ii) [(5H-octylsulfonyloxyimino-5H-thiophene-2-ylidene)-(2-methylphenyl)acetonitrile], compound (3-iii) [(camphorsulfonyloxyimino-5H-thiophene-2-ylidene)-(2-methylphenyl)acetonitrile], compound (3-iv) [(5-p-toluene) Sulfonyloxyimino-5H-thiophene-2-ylidene)-(2-methylphenyl)acetonitrile] and compound (3-v)[(5-octylsulfonyloxyimino) )-(4-Methoxyphenyl)acetonitrile] is available in the form of a commercial product.
作為[B]光產酸劑而優選的磺醯亞胺化合物例如可列舉N-(三氟甲基磺醯氧基)琥珀醯亞胺、N-(樟腦磺醯氧基)琥珀醯亞胺、N-(4-甲基苯基磺醯氧基)琥珀醯亞胺、N-(2-三氟甲基苯基磺醯氧基)琥珀醯亞胺、N-(4-氟苯基磺醯氧基)琥珀醯亞胺、N-(三氟甲基磺醯氧基)鄰苯二甲醯亞胺、N-(樟腦磺醯氧基)鄰苯二甲醯亞胺、N-(2-三氟甲基苯基磺醯氧基)鄰苯二甲醯亞胺、N-(2-氟苯基磺醯氧基)鄰苯二甲醯亞胺、N-(三氟甲基磺醯氧基)二苯基馬來醯亞胺、N-(樟腦磺醯氧基)二苯基馬來醯亞胺、4-(甲基苯基磺醯氧基)二苯基馬來醯亞胺、N-(2-三氟甲基苯基磺醯氧基)二苯基馬來醯亞胺、N-(4-氟苯基磺醯氧基)二苯基馬來醯亞胺、N-(苯基磺醯氧基)雙環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(4-甲基苯基磺醯氧基)雙環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(三氟甲磺醯氧基)雙環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(九氟丁基磺醯氧基)雙環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(樟腦磺醯氧基)雙環[2.2.1]庚-5-烯-2,3-二羧 基醯亞胺、N-(樟腦磺醯氧基)-7-氧雜雙環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(三氟甲基磺醯氧基)-7-氧雜雙環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(4-甲基苯基磺醯氧基)雙環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(4-甲基苯基磺醯氧基)-7-氧雜雙環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(2-三氟甲基苯基磺醯氧基)雙環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(2-三氟甲基苯基磺醯氧基)-7-氧雜雙環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(4-氟苯基磺醯氧基)雙環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(4-氟苯基磺醯氧基)-7-氧雜雙環[2.2.1]庚-5-烯-2,3-二羧基醯亞胺、N-(三氟甲基磺醯氧基)雙環[2.2.1]庚烷-5,6-氧基-2,3-二羧基醯亞胺、N-(樟腦磺醯氧基)雙環[2.2.1]庚烷-5,6-氧基-2,3-二羧基醯亞胺、N-(4-甲基苯基磺醯氧基)雙環[2.2.1]庚烷-5,6-氧基-2,3-二羧基醯亞胺、N-(2-三氟甲基苯基磺醯氧基)雙環[2.2.1]庚烷-5,6-氧基-2,3-二羧基醯亞胺、N-(4-氟苯基磺醯氧基)雙環[2.2.1]庚烷-5,6-氧基-2,3-二羧基醯亞胺、N-(三氟甲基磺醯氧基)萘基二羧基醯亞胺、N-(樟腦磺醯氧基)萘基二羧基醯亞胺、N-(4-甲基苯基磺醯氧基)萘基二羧基醯亞胺、N-(苯基磺醯氧基)萘基二羧基醯亞胺、N-(2-三氟甲基苯基磺醯氧基)萘基二羧基醯亞胺、N-(4-氟苯基磺醯氧基)萘基二羧基醯亞胺、N-(五氟乙基磺醯基氧基)萘基二羧基醯亞胺、N-(七氟丙基磺醯氧基)萘基二羧基醯亞胺、N-(九氟丁基磺醯氧基)萘基二羧基醯亞胺、N-(乙基磺醯基氧基)萘基二羧基醯亞胺、N-(丙基磺醯氧基)萘基二羧基醯亞胺、N-(丁基 磺醯氧基)萘基二羧基醯亞胺、N-(戊基磺醯氧基)萘基二羧基醯亞胺、N-(己基磺醯氧基)萘基二羧基醯亞胺、N-(庚基磺醯氧基)萘基二羧基醯亞胺、N-(辛基磺醯氧基)萘基二羧基醯亞胺、N-(壬基磺醯氧基)萘基二羧基醯亞胺等。 Examples of the sulfonimide compound which is preferred as the [B] photoacid generator include N-(trifluoromethylsulfonyloxy) succinimide, N-(camphorsulfonyloxy) succinimide, N-(4-methylphenylsulfonyloxy) succinimide, N-(2-trifluoromethylphenylsulfonyloxy) succinimide, N-(4-fluorophenylsulfonate) Oxy) succinimide, N-(trifluoromethylsulfonyloxy) phthalimide, N-(camphorsulfonyloxy) phthalimide, N-(2- Trifluoromethylphenylsulfonyloxy)phthalimide, N-(2-fluorophenylsulfonyloxy)phthalic imine, N-(trifluoromethylsulfonate) Diphenylmaleimide, N-(camphorsulfonyloxy)diphenylmaleimide, 4-(methylphenylsulfonyloxy)diphenylmaleimide, N-(2-trifluoromethylphenylsulfonyloxy)diphenylmaleimide, N-(4-fluorophenylsulfonyloxy)diphenylmaleimide, N-( Phenylsulfonyloxy)bicyclo[2.2.1]hept-5-ene-2,3-dicarboxyindolimine, N-(4-methylphenylsulfonyloxy)bicyclo[2.2.1]g -5-ene-2,3-dicarboxy quinone imine, N-(trifluoromethanesulfonyloxy)bicyclo[2.2.1]hept-5-ene-2,3-dicarboxyanthracene Amine, N-(nonafluorobutylsulfonyloxy)bicyclo[2.2.1]hept-5-ene-2,3-dicarboxyarsenine, N-(camphorsulfonyloxy)bicyclo[2.2.1 G-8-ene-2,3-dicarboxylate Basear imine, N-(camphorsulfonyloxy)-7-oxabicyclo[2.2.1]hept-5-ene-2,3-dicarboxyarmine, N-(trifluoromethylsulfonate) Oxy)-7-oxabicyclo[2.2.1]hept-5-ene-2,3-dicarboxyindolimine, N-(4-methylphenylsulfonyloxy)bicyclo[2.2.1] Hg-5-ene-2,3-dicarboxy quinone imine, N-(4-methylphenylsulfonyloxy)-7-oxabicyclo[2.2.1]hept-5-ene-2,3 -Dicarboxy quinone imine, N-(2-trifluoromethylphenylsulfonyloxy)bicyclo[2.2.1]hept-5-ene-2,3-dicarboxy quinone imine, N-(2- Trifluoromethylphenylsulfonyloxy)-7-oxabicyclo[2.2.1]hept-5-ene-2,3-dicarboxyindolimine, N-(4-fluorophenylsulfonyloxy) Bicyclo[2.2.1]hept-5-ene-2,3-dicarboxy quinone imine, N-(4-fluorophenylsulfonyloxy)-7-oxabicyclo[2.2.1]hept-5 -ene-2,3-dicarboxy quinone imine, N-(trifluoromethylsulfonyloxy)bicyclo[2.2.1]heptane-5,6-oxy-2,3-dicarboxy quinone imine , N-(camphorsulfonyloxy)bicyclo[2.2.1]heptane-5,6-oxy-2,3-dicarboxyindenine, N-(4-methylphenylsulfonyloxy) Bicyclo [2.2.1] heptane-5,6-oxy-2,3-dicarboxy quinone imine, N-(2-trifluoromethylphenylsulfonyloxy)bicyclo[2.2.1]heptane -5,6-oxy-2,3- Carboxylimine, N-(4-fluorophenylsulfonyloxy)bicyclo[2.2.1]heptane-5,6-oxy-2,3-dicarboxyarmine, N-(trifluoromethyl) Alkyl sulfonyloxy)naphthyldicarboxy quinone imine, N-(camphorsulfonyloxy)naphthyldicarboxy quinone imine, N-(4-methylphenylsulfonyloxy)naphthyldicarboxyanthracene Imine, N-(phenylsulfonyloxy)naphthyldicarboxy quinone imine, N-(2-trifluoromethylphenylsulfonyloxy)naphthyldicarboxy quinone imine, N-(4- Fluorophenylsulfonyloxy)naphthyldicarboxyanilide, N-(pentafluoroethylsulfonyloxy)naphthyldicarboxyarsenine, N-(heptafluoropropylsulfonyloxy)naphthalene Dicarboxy quinone imine, N-(nonafluorobutylsulfonyloxy)naphthyl dicarboxy quinone imine, N-(ethylsulfonyloxy)naphthyl dicarboxy quinone imine, N-(propyl Sulfosulfonyloxy)naphthyldicarboxyanilide, N-(butyl Sulfomethoxy)naphthyldicarboxy quinone imine, N-(pentylsulfonyloxy)naphthyldicarboxy quinone imine, N-(hexylsulfonyloxy)naphthyldicarboxy quinone imine, N- (heptylsulfonyloxy)naphthyldicarboxy quinone imine, N-(octylsulfonyloxy)naphthyldicarboxy quinone imine, N-(fluorenylsulfonyloxy)naphthyldicarboxy fluorene Amines, etc.
於以上所說明的[B]光產酸劑中,自使放射線感光度提高及溶解性的觀點考慮,如上所述那樣優選為肟磺酸酯化合物,更優選為含有式(2)所表示的肟磺酸酯基的化合物,進一步更優選為式(3)所表示的肟磺酸酯化合物。其中特別優選可作為市售品而獲得的[(5-丙基磺醯基氧基亞胺基-5H-噻吩-2-亞基)-(2-甲基苯基)乙腈]、[(5H-辛基磺醯基氧基亞胺基-5H-噻吩-2-亞基)-(2-甲基苯基)乙腈]、[(5-對甲苯磺醯基氧基亞胺基-5H-噻吩-2-亞基)-(2-甲基苯基)乙腈]、[(樟腦磺醯基氧基亞胺基-5H-噻吩-2-亞基)-(2-甲基苯基)乙腈]、[(5-辛基磺醯基氧基亞胺基)-(4-甲氧基苯基)乙腈]。 In the above-mentioned [B] photoacid generator, from the viewpoint of improving the radiation sensitivity and the solubility, it is preferably an oxime sulfonate compound as described above, and more preferably contains the formula (2). The compound of the oxime sulfonate group is more preferably an oxime sulfonate compound represented by the formula (3). Among them, [(5-propylsulfonyloxyimino-5H-thiophene-2-ylidene)-(2-methylphenyl)acetonitrile], [(5H) which can be obtained as a commercial product is particularly preferable. -octylsulfonyloxyimino-5H-thiophene-2-ylidene)-(2-methylphenyl)acetonitrile], [(5-p-toluenesulfonyloxyimino-5H-) Thiophen-2-ylidene)-(2-methylphenyl)acetonitrile], [(camphorsulfonyloxyimino-5H-thiophene-2-ylidene)-(2-methylphenyl)acetonitrile ], [(5-octylsulfonyloxyimino)-(4-methoxyphenyl)acetonitrile].
[B]光產酸劑可單獨使用1種,亦可將2種以上混合使用。作為本實施形態的感放射線性樹脂組成物中的[B]光產酸劑的含量,相對於[A]聚合物100質量份而言優選為0.1質量份~10質量份,更優選為1質量份~5質量份。若[B]光產酸劑的含量為上述範圍,則可使感放射線性樹脂組成物的放射線感光度最佳化,可維持透明性而形成絕緣膜。 [B] The photoacid generator may be used singly or in combination of two or more. The content of the [B] photoacid generator in the radiation sensitive resin composition of the present embodiment is preferably 0.1 parts by mass to 10 parts by mass, more preferably 1 mass, per 100 parts by mass of the [A] polymer. ~5 parts by mass. When the content of the [B] photoacid generator is in the above range, the radiation sensitivity of the radiation sensitive resin composition can be optimized, and the transparency can be maintained to form an insulating film.
在本實施形態的陣列基板的絕緣膜的製造中所使用的本實施形態的感放射線性樹脂組成物可含有[C]化合物。[C]化合物是作為硬化劑而發揮功能的化合物,亦即促 進由感放射線性樹脂組成物所形成的塗膜的硬化。因此,為方便起見,亦將其稱為[C]化合物(硬化劑)或[C]硬化劑等。[C]化合物是選自由下述式(C-1)所表示的化合物、鏻鹽、硫醇化合物及嵌段異氰酸酯化合物所構成的群組的至少1種化合物。感放射線性樹脂組成物含有選自該特定化合物群組的[C]化合物,因此可使絕緣膜的硬化溫度更有效地降低。藉由使本實施形態的感放射線性樹脂組成物含有[C]化合物,變得可藉由例如180℃~200℃等200℃以下的硬化溫度而製造絕緣膜。以下,對作為[C]化合物的各化合物加以詳述。 The radiation sensitive resin composition of the present embodiment used in the production of the insulating film of the array substrate of the present embodiment may contain the [C] compound. [C] A compound is a compound that functions as a hardener, that is, it promotes The hardening of the coating film formed by the radiation sensitive resin composition. Therefore, for convenience, it is also referred to as a [C] compound (hardener) or a [C] hardener or the like. The compound [C] is at least one compound selected from the group consisting of a compound represented by the following formula (C-1), a phosphonium salt, a thiol compound, and a blocked isocyanate compound. The radiation sensitive resin composition contains the compound [C] selected from the group of the specific compounds, so that the hardening temperature of the insulating film can be more effectively lowered. By including the [C] compound in the radiation sensitive resin composition of the present embodiment, the insulating film can be produced by, for example, a curing temperature of 200 ° C or lower, such as 180 ° C to 200 ° C. Hereinafter, each compound which is a compound of [C] will be described in detail.
[C]化合物優選為選自由下述式(C-1)所表示的化合物所構成的群組的至少1種化合物。作為[C]化合物,藉由選擇具有胺基與缺電子基的上述特定化合物,可更有效地使絕緣膜的硬化溫度降低。 The compound [C] is preferably at least one compound selected from the group consisting of compounds represented by the following formula (C-1). As the [C] compound, by selecting the above specific compound having an amine group and an electron deficient group, the hardening temperature of the insulating film can be more effectively lowered.
在上述式(C-1)中,R7~R16分別獨立為氫原子、吸電子基或胺基。其中,R7~R16中的至少1個為胺基。而且, 該胺基的氫原子的全部或一部分也可以被碳數為2~6的伸烷基取代。A為單鍵、羰基、羰氧基、羰基亞甲基、亞磺醯基、磺醯基、亞甲基或碳數為2~6的伸烷基。其中,上述亞甲基及伸烷基的氫原子的全部或一部分也可以被氰基、鹵素原子或氟烷基取代。 In the above formula (C-1), R 7 to R 16 each independently represent a hydrogen atom, an electron withdrawing group or an amine group. Among them, at least one of R 7 to R 16 is an amine group. Further, all or a part of the hydrogen atom of the amine group may be substituted by an alkylene group having 2 to 6 carbon atoms. A is a single bond, a carbonyl group, a carbonyloxy group, a carbonylmethylene group, a sulfinyl group, a sulfonyl group, a methylene group or an alkylene group having 2 to 6 carbon atoms. Here, all or a part of the hydrogen atom of the above methylene group and alkylene group may be substituted by a cyano group, a halogen atom or a fluoroalkyl group.
上述式(C-1)的R7~R16所表示的吸電子基例如可列舉鹵素原子、氰基、硝基、三氟甲基、羧基、醯基、烷基磺醯基、烷氧基磺醯基、二氰基乙烯基、三氰基乙烯基、磺醯基等。這些基中優選硝基、烷氧基磺醯基、三氟甲基。A所表示的基優選為磺醯基、亦可被氟烷基取代的亞甲基。 Examples of the electron withdrawing group represented by R 7 to R 16 in the above formula (C-1) include a halogen atom, a cyano group, a nitro group, a trifluoromethyl group, a carboxyl group, a decyl group, an alkylsulfonyl group, and an alkoxy group. Sulfonyl, dicyanovinyl, tricyanovinyl, sulfonyl and the like. Among these, a nitro group, an alkoxysulfonyl group, and a trifluoromethyl group are preferable. The group represented by A is preferably a sulfonyl group or a methylene group which may be substituted by a fluoroalkyl group.
作為上述式(C-1)所表示的化合物,優選2,2-雙(4-胺基苯基)六氟丙烷、2,3-雙(4-胺基苯基)丁二腈、4,4'-二胺基二苯甲酮、苯甲酸-4,4'-二胺基苯酯、4,4'-二胺基二苯基碸,更優選4,4'-二胺基二苯基碸、2,2-雙(4-胺基苯基)六氟丙烷。 The compound represented by the above formula (C-1) is preferably 2,2-bis(4-aminophenyl)hexafluoropropane or 2,3-bis(4-aminophenyl)succinonitrile, 4, 4'-Diaminobenzophenone, 4,4'-diaminophenyl benzoate, 4,4'-diaminodiphenylanthracene, more preferably 4,4'-diaminodiphenyl Base, 2,2-bis(4-aminophenyl)hexafluoropropane.
上述式(C-1)所表示的化合物可單獨使用或者將2種以上混合使用。作為上述式(C-1)所表示的化合物的含有比例,相對於[A]聚合物100質量份而言優選為0.1質量份~20質量份,更優選為0.2質量份~10質量份。藉由使上述式(C-1)所表示的化合物的含有比例為上述範圍,可有效地促進由感放射線性樹脂組成物所形成的絕緣膜的硬化。 The compounds represented by the above formula (C-1) may be used singly or in combination of two or more. The content ratio of the compound represented by the above formula (C-1) is preferably 0.1 parts by mass to 20 parts by mass, more preferably 0.2 parts by mass to 10 parts by mass, per 100 parts by mass of the [A] polymer. By setting the content ratio of the compound represented by the above formula (C-1) to the above range, the hardening of the insulating film formed of the radiation sensitive resin composition can be effectively promoted.
鏻鹽可使用選自由下述式(4)所表示的化合物所構 成的群組的至少1種。 The onium salt can be formed using a compound selected from the group consisting of the following formula (4) At least one of the group formed.
在上述式(4)中,A1為磷原子。R21~R24分別獨立為氫原子、碳數為1~20的烷基、碳數為6~18的芳基或碳數為7~30的芳烷基。其中,這些基的氫原子的一部分或全部亦可被取代。Q-為1價陰離子。 In the above formula (4), A 1 is a phosphorus atom. R 21 to R 24 are each independently a hydrogen atom, an alkyl group having 1 to 20 carbon atoms, an aryl group having 6 to 18 carbon atoms or an aralkyl group having 7 to 30 carbon atoms. Among them, some or all of the hydrogen atoms of these groups may be substituted. Q - is a monovalent anion.
上述式(4)中的R21~R24所表示的碳數為1~20的烷基例如可列舉直鏈狀或分支狀的甲基、乙基、丙基、丁基、戊基、己基、庚基、辛基、壬基、癸基、十二烷基、十三烷基、十四烷基、十五烷基、十六烷基、十七烷基、十八烷基、十九烷基、二十烷基等。 The alkyl group having 1 to 20 carbon atoms represented by R 21 to R 24 in the above formula (4) may, for example, be a linear or branched methyl group, an ethyl group, a propyl group, a butyl group, a pentyl group or a hexyl group. , heptyl, octyl, decyl, decyl, dodecyl, tridecyl, tetradecyl, pentadecyl, hexadecyl, heptadecyl, octadecyl, nineteen Alkyl, eicosyl, and the like.
上述式(4)中的R21~R24所表示的碳數為6~18的芳基例如可列舉苯基、萘基等。 Examples of the aryl group having 6 to 18 carbon atoms represented by R 21 to R 24 in the above formula (4) include a phenyl group and a naphthyl group.
上述式(4)中的R21~R24所表示的碳數為7~30的芳烷基例如可列舉苄基、苯乙基等。 The aralkyl group having 7 to 30 carbon atoms represented by R 21 to R 24 in the above formula (4) may, for example, be a benzyl group or a phenethyl group.
上述式(4)中的Q-所表示的1價陰離子例如可列舉氯化物離子、溴化物離子、碘化物離子、氰化物離子、硝酸根離子、亞硝酸根離子、次氯酸根離子、亞氯酸根離子、 氯酸根離子、過氯酸根離子、過錳酸根離子、碳酸氫根離子、磷酸二氫根離子、硫化氫根離子、硫氰酸根離子、羧酸離子、磺酸離子、苯氧基離子、四氟硼酸鹽離子、四芳基硼酸鹽離子、六氟銻酸鹽離子等。 Examples of the monovalent anion represented by Q - in the above formula (4) include a chloride ion, a bromide ion, an iodide ion, a cyanide ion, a nitrate ion, a nitrite ion, a hypochlorite ion, and a chlorine. Acid ion, chlorate ion, perchlorate ion, permanganate ion, hydrogencarbonate ion, dihydrogen phosphate ion, hydrogen sulfide ion, thiocyanate ion, carboxylate ion, sulfonate ion, phenoxy ion , tetrafluoroborate ion, tetraaryl borate ion, hexafluoroantimonate ion, and the like.
鏻鹽例如可列舉四苯基鏻.四苯基硼酸鹽、四苯基鏻.四(對甲苯基)硼酸鹽、四苯基鏻.四(對乙基苯基)硼酸鹽、四苯基鏻.四(對甲氧基苯基)硼酸鹽、四苯基鏻.四(對乙氧基苯基)硼酸鹽、四苯基鏻.四(對第三丁氧基苯基)硼酸鹽、四苯基鏻.四(間甲苯基)硼酸鹽、四苯基鏻.四(間甲氧基苯基)硼酸鹽、三(對甲苯基)苯基鏻.四(對甲苯基)硼酸鹽、四(對甲苯基)鏻.四(對甲苯基)硼酸鹽、三(對甲氧基苯基)苯基鏻.四(對甲苯基)硼酸鹽、四苯基鏻硫氰酸鹽、丁基三苯基鏻硫氰酸鹽、甲基三苯基鏻硫氰酸鹽、對甲苯基三苯基鏻硫氰酸鹽等。 Examples of the phosphonium salt include tetraphenylphosphonium. Tetraphenylborate, tetraphenylphosphonium. Tetrakis(p-tolyl)borate, tetraphenylphosphonium. Tetrakis(p-ethylphenyl)borate, tetraphenylphosphonium. Tetrakis(p-methoxyphenyl)borate, tetraphenylphosphonium. Tetrakis(p-ethoxyphenyl)borate, tetraphenylphosphonium. Tetrakis(p-tert-butoxyphenyl)borate, tetraphenylphosphonium. Tetra(m-tolyl)borate, tetraphenylphosphonium. Tetra(m-methoxyphenyl)borate, tris(p-tolyl)phenylhydrazine. Tetrakis(p-tolyl)borate, tetra (p-tolyl) oxime. Tetrakis(p-tolyl)borate, tris(p-methoxyphenyl)phenylhydrazine. Tetra(p-tolyl)borate, tetraphenylphosphonium thiocyanate, butyltriphenylphosphonium thiocyanate, methyltriphenylphosphonium thiocyanate, p-tolyltriphenylsulfonium thiocyanate Salt and so on.
這些鏻鹽中優選丁基三苯基鏻硫氰酸鹽。鏻鹽可單獨使用或者將2種以上混合使用。 Among these onium salts, butyltriphenylphosphonium thiocyanate is preferred. The onium salts may be used singly or in combination of two or more.
作為感放射線性樹脂組成物中的鏻鹽的含有比例,相對於[A]聚合物100質量份而言優選為0.05質量份~10質量份,更優選為0.1質量份~5質量份。藉由使鏻鹽的含有比例為上述特定範圍,可實現感放射線性樹脂組成物的硬化促進。 The content ratio of the onium salt in the radiation-sensitive resin composition is preferably 0.05 parts by mass to 10 parts by mass, more preferably 0.1 parts by mass to 5 parts by mass, per 100 parts by mass of the [A] polymer. By setting the content ratio of the onium salt to the above specific range, the hardening promotion of the radiation sensitive resin composition can be achieved.
硫醇化合物是在1分子中具有2個以上巰基的化合物。 The thiol compound is a compound having two or more mercapto groups in one molecule.
硫醇化合物只要在1分子中具有2個以上巰基則並無特別限定,可使用選自由下述式(5)所表示的化合物所構成的群組的至少1種。 The thiol compound is not particularly limited as long as it has two or more thiol groups in one molecule, and at least one selected from the group consisting of compounds represented by the following formula (5) can be used.
在上述式(5)中,R31為亞甲基、碳數為2~10的伸烷基。其中,這些基的氫原子的一部分或全部也可以被烷基取代。Y1為單鍵、-CO-或-O-CO-*。其中,附有*的鍵與R31鍵結。n為2~10的整數。A2為亦可具有1個或多個醚鍵的碳數為2~70的n價烴基,或者在n為3的情況時為下述式(6)所表示的基。 In the above formula (5), R 31 is a methylene group and an alkylene group having 2 to 10 carbon atoms. Among them, some or all of the hydrogen atoms of these groups may be substituted with an alkyl group. Y 1 is a single bond, -CO- or -O-CO- * . Among them, the key with * is bonded to R 31 . n is an integer from 2 to 10. A 2 is an n-valent hydrocarbon group having 2 to 70 carbon atoms which may have one or more ether bonds, or a group represented by the following formula (6) when n is 3.
在上述式(6)中,R32~R34分別獨立為亞甲基或碳數為2~6的伸烷基。“*”分別表示鍵。 In the above formula (6), R 32 to R 34 are each independently a methylene group or an alkylene group having 2 to 6 carbon atoms. " * " indicates the key.
作為上述式(5)所表示的化合物,典型的是可使用巰基羧酸與多元醇的酯化物等。構成酯化物的巰基羧酸例如可列舉硫代乙酸、3-巰基丙酸、3-巰基丁酸、3-巰基戊酸等。而且,構成酯化物的多元醇例如可列舉乙二醇、丙二醇、三羥甲基丙烷、四乙二醇、二季戊四醇、1,4-丁二醇、季戊四醇等。 As the compound represented by the above formula (5), an esterified product of a mercaptocarboxylic acid and a polyhydric alcohol can be typically used. Examples of the mercaptocarboxylic acid constituting the ester compound include thioacetic acid, 3-mercaptopropionic acid, 3-mercaptobutyric acid, 3-mercaptovaleric acid, and the like. Further, examples of the polyhydric alcohol constituting the ester compound include ethylene glycol, propylene glycol, trimethylolpropane, tetraethylene glycol, dipentaerythritol, 1,4-butanediol, and pentaerythritol.
上述式(5)所表示的化合物優選為三羥甲基丙烷三(3-巰基丙酸)酯、季戊四醇四(3-巰基丙酸)酯、四乙二醇雙(3-巰基丙酸)酯、二季戊四醇六(3-巰基丙酸)酯、季戊四醇四(巰基乙酸)酯、1,4-雙(3-巰基丁醯氧基)丁烷、季戊四醇四(3-巰基丁酸)酯、季戊四醇四(3-巰基戊酸)酯、1,3,5-三(3-巰基丁氧基乙基)-1,3,5-三嗪-2,4,6(1H,3H,5H)-三酮。 The compound represented by the above formula (5) is preferably trimethylolpropane tris(3-mercaptopropionic acid) ester, pentaerythritol tetrakis(3-mercaptopropionic acid) ester, and tetraethylene glycol bis(3-mercaptopropionate) ester. Dipentaerythritol hexa(3-mercaptopropionic acid) ester, pentaerythritol tetrakis(mercaptoacetic acid) ester, 1,4-bis(3-mercaptobutyloxy)butane, pentaerythritol tetrakis(3-mercaptobutyrate), pentaerythritol Tetrakis(3-mercaptovalerate), 1,3,5-tris(3-mercaptobutoxyethyl)-1,3,5-triazine-2,4,6(1H,3H,5H)- Triketone.
硫醇化合物的在1分子中具有2個以上巰基的化合物亦可使用下述式(7)~下述式(9)所表示的化合物。 As the compound having two or more mercapto groups in one molecule of the thiol compound, a compound represented by the following formula (7) to the following formula (9) can also be used.
[化18]
在上述式(7)中,R41為亞甲基或碳數為2~20的伸烷基。R42為亞甲基或碳數為2~6的直鏈或分支伸烷基。k為1~20的整數。 In the above formula (7), R 41 is a methylene group or an alkylene group having 2 to 20 carbon atoms. R 42 is a methylene group or a linear or branched alkyl group having 2 to 6 carbon atoms. k is an integer from 1 to 20.
在上述式(8)中,R43~R46分別獨立為氫原子、羥基或下述式(9)所表示的基。其中,R43~R46的至少1個是下述式(9)所表示的基。 In the above formula (8), R 43 to R 46 each independently represent a hydrogen atom, a hydroxyl group or a group represented by the following formula (9). However, at least one of R 43 to R 46 is a group represented by the following formula (9).
在上述式(9)中,R47為亞甲基或碳數為2~6的直鏈或分支伸烷基。 In the above formula (9), R 47 is a methylene group or a linear or branched alkyl group having a carbon number of 2 to 6.
硫醇化合物可單獨使用或者將2種以上混合使用。作為感放射線性樹脂組成物中的硫醇化合物的含有比例,相對於[A]聚合物100質量份而言優選為1質量份~20質量份,更優選為5質量份~15質量份。藉由使硫醇化合物的含有比例為上述特定範圍,可實現感放射線性樹脂組成物的硬化促進。 The thiol compound may be used singly or in combination of two or more. The content ratio of the thiol compound in the radiation-sensitive resin composition is preferably 1 part by mass to 20 parts by mass, more preferably 5 parts by mass to 15 parts by mass, per 100 parts by mass of the [A] polymer. By setting the content ratio of the thiol compound to the above specific range, the hardening acceleration of the radiation sensitive resin composition can be achieved.
嵌段聚異氰酸酯化合物是使異氰酸酯基與含有活性氫基的化合物(阻斷劑)反應而在常溫成為惰性的化合物,且具有如下的性質:若對其進行加熱,則阻斷劑解離而再生出異氰酸酯基。藉由使感放射線性樹脂組成物含有嵌段聚異氰酸酯,可作為有效的交聯劑而進行異氰酸酯-羥基交聯反應,從而實現感放射線性樹脂組成物的硬化促進。 The blocked polyisocyanate compound is a compound which reacts with an active hydrogen group-containing compound (blocking agent) and is inert at normal temperature, and has a property that if it is heated, the blocking agent dissociates and regenerates Isocyanate group. By allowing the radiation-sensitive resin composition to contain a block polyisocyanate, the isocyanate-hydroxyl crosslinking reaction can be carried out as an effective crosslinking agent, thereby achieving the hardening acceleration of the radiation sensitive resin composition.
嵌段聚異氰酸酯化合物可藉由自脂肪族或脂環族二異氰酸酯衍生的聚異氰酸酯與具有活性氫的化合物(阻斷劑)的公知的反應而獲得。 The blocked polyisocyanate compound can be obtained by a known reaction of a polyisocyanate derived from an aliphatic or alicyclic diisocyanate with a compound (blocker) having an active hydrogen.
二異氰酸酯例如可列舉四亞甲基二異氰酸酯、戊烷二異氰酸酯、六亞甲基二異氰酸酯(HDI)、2,2,4-三甲基-1,6-二異氰酸基己烷、2,4,4-三甲基-1,6-二異氰酸基己烷、賴胺酸二異氰酸酯、異佛爾酮二異氰酸酯(IPDI)、1,3-雙(異氰酸酯基甲基)環己烷、4,4-二環己基甲烷二異氰酸酯、降冰片烯二異氰酸酯、亞甲苯二異氰酸酯、4,4'-二苯基甲烷二異氰酸酯、1,5-萘二異氰酸酯、聯甲苯胺二異氰酸酯、二甲苯胺異氰酸酯、1,4-四亞甲基二異氰酸酯、1,5-五亞甲基二異氰酸酯、1,6-六亞甲基二異氰酸酯、3-異氰酸酯甲基-3,5,5-三甲基環己基二異氰酸酯等。 Examples of the diisocyanate include tetramethylene diisocyanate, pentane diisocyanate, hexamethylene diisocyanate (HDI), 2,2,4-trimethyl-1,6-diisocyanatohexane, and 2 , 4,4-trimethyl-1,6-diisocyanatohexane, lysine diisocyanate, isophorone diisocyanate (IPDI), 1,3-bis(isocyanatemethyl)cyclohexane Alkane, 4,4-dicyclohexylmethane diisocyanate, norbornene diisocyanate, tolylene diisocyanate, 4,4'-diphenylmethane diisocyanate, 1,5-naphthalene diisocyanate, tolidine diisocyanate, Xylidine isocyanate, 1,4-tetramethylene diisocyanate, 1,5-pentamethylene diisocyanate, 1,6-hexamethylene diisocyanate, 3-isocyanate methyl-3,5,5- Trimethylcyclohexyl diisocyanate or the like.
作為市售品,例如以丁酮的肟阻斷異氰酸酯基的化合物可列舉Duranate(注冊商標)TPA-B80E、Duranate TPA-B80X、Duranate E402-B80T、Duranate MF-B60XN、Duranate MF-B60X、Duranate MF-B80M(以上由旭化成工業公司製造);以活性亞甲基阻斷異氰酸酯基的化合物可 列舉Duranate(注冊商標)MF-K60X(旭化成工業公司);具有(甲基)丙烯醯基的異氰酸酯化合物的嵌段體可列舉Karenz(注冊商標)MOI-BP、Karenz(注冊商標)MOI-BM(以上由昭和電工公司製造)。 As a commercially available product, for example, a compound which blocks an isocyanate group with a hydrazine of methyl ethyl ketone can be exemplified by Duranate (registered trademark) TPA-B80E, Duranate TPA-B80X, Duranate E402-B80T, Duranate MF-B60XN, Duranate MF-B60X, Duranate MF. -B80M (above manufactured by Asahi Kasei Industrial Co., Ltd.); compounds which block isocyanate groups with active methylene groups For example, Dranate (registered trademark) MF-K60X (Asahi Kasei Kogyo Co., Ltd.); a block of an isocyanate compound having a (meth) acrylonitrile group; Karenz (registered trademark) MOI-BP, Karenz (registered trademark) MOI-BM ( The above is manufactured by Showa Denko.)
這些市售品中,在使用Duranate(注冊商標)E402-B80T、Duranate MF-B60X的情況時表現出高的可撓性,藉由製成與其他化合物的混合類而使用,可自由地控制其硬度,因此優選使用。 Among these commercial products, when using Duranat (registered trademark) E402-B80T or Duranate MF-B60X, it exhibits high flexibility, and it can be used by mixing with other compounds, and it can control freely. Hardness is therefore preferred.
由二異氰酸酯所衍生的聚異氰酸酯例如可列舉異三聚氰酸酯型聚異氰酸酯、縮二脲型聚異氰酸酯、胺基甲酸酯型聚異氰酸酯、脲基甲酸酯型聚異氰酸酯等。自硬化性的觀點考慮,優選異三聚氰酸酯型聚異氰酸酯。 Examples of the polyisocyanate derived from the diisocyanate include a hetero-cyanate type polyisocyanate, a biuret type polyisocyanate, a urethane type polyisocyanate, and an allophanate type polyisocyanate. From the viewpoint of hardenability, a isocyanurate type polyisocyanate is preferred.
阻斷劑例如可列舉醇類化合物、酚類化合物、活性亞甲基類化合物、硫醇類化合物、醯胺類化合物、醯亞胺類化合物、咪唑類化合物、吡唑類化合物、脲類化合物、肟類化合物、胺類化合物、亞胺類化合物、吡啶類化合物等。 Examples of the blocking agent include an alcohol compound, a phenol compound, an active methylene compound, a thiol compound, a guanamine compound, a quinone compound, an imidazole compound, a pyrazole compound, a urea compound, and the like. An anthracene compound, an amine compound, an imine compound, a pyridine compound or the like.
醇類化合物例如可列舉甲醇、乙醇、丙醇、丁醇、2-乙基己醇、甲基溶纖劑、丁基溶纖劑、甲基卡必醇、苯甲醇、環己醇等;酚類化合物例如可列舉苯酚、甲酚、乙基苯酚、丁基苯酚、壬基苯酚、二壬基苯酚、苯乙烯化苯酚、羥基苯甲酸酯等;活性亞甲基類化合物例如可列舉丙二酸二甲酯、丙二酸二乙酯、乙醯乙酸甲酯、乙醯乙酸乙酯、乙醯丙酮等; 硫醇類化合物例如可列舉丁基硫醇、十二烷基硫醇等;醯胺類化合物例如可列舉乙醯苯胺、乙醯胺、ε-己內醯胺、δ-戊內醯胺、γ-丁內醯胺等;醯亞胺類化合物例如可列舉琥珀醯亞胺、馬來醯亞胺等;咪唑類化合物例如可列舉咪唑、2-甲基咪唑等;吡唑類化合物例如可列舉3-甲基吡唑、3,5-二甲基吡唑、3,5-乙基吡唑等;脲類化合物例如可列舉尿素、硫脲、伸乙基脲等;肟類化合物例如可列舉甲醛肟、乙醛肟、丙酮肟、丁酮肟、環己酮肟等;胺類化合物例如可列舉二苯基胺、苯胺、哢唑等;亞胺類化合物例如可列舉伸乙基亞胺、聚乙烯亞胺等;吡啶類化合物例如可列舉2-羥基吡啶、2-羥基喹啉等。 Examples of the alcohol compound include methanol, ethanol, propanol, butanol, 2-ethylhexanol, methyl cellosolve, butyl cellosolve, methyl carbitol, benzyl alcohol, cyclohexanol, and the like; phenolic compounds; Examples thereof include phenol, cresol, ethylphenol, butylphenol, nonylphenol, dinonylphenol, styrenated phenol, and hydroxybenzoic acid ester; and examples of the active methylene-based compound include malonic acid Methyl ester, diethyl malonate, methyl ethyl acetate, ethyl acetate, ethyl acetate, etc.; Examples of the thiol compound include butyl thiol and dodecyl thiol; and examples of the guanamine compound include acetanilide, acetamide, ε-caprolactam, δ-valeroinamide, and γ. - butylidene and the like; examples of the quinone imine compound include succinimide and maleimide; examples of the imidazole compound include imidazole and 2-methylimidazole; and pyrazole compounds include, for example, 3 -methylpyrazole, 3,5-dimethylpyrazole, 3,5-ethylpyrazole, etc.; examples of the urea compound include urea, thiourea, and ethyl urea; and examples of the hydrazine compound include formaldehyde. Examples thereof include hydrazine, acetaldoxime, acetone oxime, butanone oxime, cyclohexanone oxime, and the like; and examples of the amine compound include diphenylamine, aniline, carbazole, and the like; and the imine compound is exemplified by exoethylenimine and poly Examples of the pyridine compound include 2-hydroxypyridine and 2-hydroxyquinoline.
嵌段聚異氰酸酯化合物可單獨使用或者將2種以上混合使用。作為感放射線性樹脂組成物中的嵌段聚異氰酸酯化合物的含有比例,相對於[A]聚合物100質量份而言優選為0.1質量份~10質量份,更優選為0.5質量份~5質量份。藉由使嵌段聚異氰酸酯化合物的含有比例為上述範圍,可實現感放射線性樹脂組成物的硬化促進。 The block polyisocyanate compounds may be used singly or in combination of two or more. The content ratio of the block polyisocyanate compound in the radiation sensitive resin composition is preferably 0.1 parts by mass to 10 parts by mass, more preferably 0.5 parts by mass to 5 parts by mass, per 100 parts by mass of the [A] polymer. . By setting the content ratio of the block polyisocyanate compound to the above range, the curing of the radiation sensitive resin composition can be promoted.
本實施形態的陣列基板的絕緣膜的形成中所使用的 本實施形態的感放射線性樹脂組成物除了上述[A]聚合物及[B]光產酸劑以外,亦可含有[C]化合物(硬化劑),除此以外亦可在不損及本發明的效果的範圍內視需要含有抗氧化劑、表面活性劑、密接助劑、鹼性化合物、醌二疊氮化合物、增塑劑等其他任意成分。此種任意成分可單獨使用1種或者將2種以上組合使用。 Used in the formation of the insulating film of the array substrate of the present embodiment. The radiation sensitive resin composition of the present embodiment may contain a [C] compound (curing agent) in addition to the above [A] polymer and [B] photoacid generator, and may not detract from the present invention. In the range of the effect, other optional components such as an antioxidant, a surfactant, a adhesion aid, a basic compound, a quinonediazide compound, and a plasticizer may be contained as needed. These optional components may be used alone or in combination of two or more.
本實施形態的陣列基板的絕緣膜的形成中所使用的本實施形態的感放射線性樹脂組成物可藉由除了上述[A]聚合物及[B]光產酸劑以外,進一步混合[C]化合物(硬化劑)及視需要而添加的任意成分而調製。而且,本實施形態的感放射線性樹脂組成物可作為正型的感放射線性樹脂組成物而使用。本實施形態的感放射線性樹脂組成物優選調製為溶解或分散於適當的溶劑中的狀態而使用。例如,於溶劑中將[A]成分([A]聚合物)、[B]成分([B]光產酸劑)、[C]成分([C]化合物)及作為任意成分的[D]成分以規定的比例加以混合,由此可調製感放射線性樹脂組成物。 The radiation sensitive resin composition of the present embodiment used for forming the insulating film of the array substrate of the present embodiment can be further mixed by the addition of the above [A] polymer and [B] photoacid generator [C] The compound (hardener) and any components added as needed are prepared. Further, the radiation sensitive resin composition of the present embodiment can be used as a positive radiation sensitive resin composition. The radiation sensitive resin composition of the present embodiment is preferably used in a state of being dissolved or dispersed in a suitable solvent. For example, [A] component ([A] polymer), [B] component ([B] photoacid generator), [C] component ([C] compound), and [D] as an optional component in a solvent The components are mixed at a predetermined ratio, whereby the radiation sensitive resin composition can be modulated.
本實施形態的感放射線性樹脂組成物的固形物濃度(是指聚合物溶液中所含的聚合物的質量於聚合物溶液的總質量中所占的比例)可根據使用目的或所期望的膜厚等而任意設定,優選為5質量%~50質量%,更優選為10質量%~40質量%,進一步更優選為15質量%~35質量%。 The solid content concentration of the radiation sensitive resin composition of the present embodiment (refers to the ratio of the mass of the polymer contained in the polymer solution to the total mass of the polymer solution) may be depending on the purpose of use or the desired film. The thickness is arbitrarily set, and is preferably 5% by mass to 50% by mass, more preferably 10% by mass to 40% by mass, still more preferably 15% by mass to 35% by mass.
作為可在本實施形態的感放射線性樹脂組成物的調 製中所使用的溶劑,如上所述那樣適宜使用均一地溶解或分散各成分,且並不與各成分反應的溶劑。此種溶劑例如可列舉醇類、醚類、二乙二醇烷基醚類、乙二醇烷基醚乙酸酯類、丙二醇單烷基醚類、丙二醇單烷基醚乙酸酯類、丙二醇單烷基醚丙酸酯類、芳香族烴類、酮類、酯類等。 As a modulation of the radiation sensitive resin composition which can be used in the present embodiment As the solvent used in the production, as described above, a solvent which uniformly dissolves or disperses each component and does not react with each component is suitably used. Examples of such a solvent include alcohols, ethers, diethylene glycol alkyl ethers, ethylene glycol alkyl ether acetates, propylene glycol monoalkyl ethers, propylene glycol monoalkyl ether acetates, and propylene glycol monoalkanes. Alkyl ether propionates, aromatic hydrocarbons, ketones, esters, and the like.
作為此種溶劑,醇類例如可列舉苯甲醇、二丙酮醇等;醚類例如可列舉四氫呋喃或二異丙基醚、二正丁基醚、二正戊基醚、二異戊基醚、二正己基醚等二烷基醚等;二乙二醇烷基醚類例如可列舉二乙二醇單甲醚、二乙二醇單乙醚、二乙二醇二甲醚、二乙二醇二乙醚、二乙二醇甲乙醚等;乙二醇烷基醚乙酸酯類例如可列舉甲基溶纖劑乙酸酯、乙基溶纖劑乙酸酯、乙二醇單丁醚乙酸酯、乙二醇單乙醚乙酸酯等;丙二醇單烷基醚類例如可列舉丙二醇單甲醚、丙二醇單乙醚、丙二醇單丙醚、丙二醇單丁醚等;丙二醇單烷基醚乙酸酯類例如可列舉丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸酯、丙二醇單丙醚乙酸酯、丙二醇單丁醚乙酸酯等;丙二醇單烷基醚丙酸酯類例如可列舉丙二醇單甲醚丙酸酯、丙二醇單乙醚丙酸酯、丙二醇單丙醚丙酸酯、丙二醇單丁醚丙酸酯等;芳香族烴類例如可列舉甲苯、二甲苯等;酮類例如可列舉丁酮、甲基異丁基酮、環己酮、2-庚酮、4-羥基-4-甲基-2-戊酮等; 酯類例如可列舉乙酸甲酯、乙酸乙酯、乙酸丙酯、乙酸異丙酯、乙酸丁酯、2-羥基丙酸乙酯、2-羥基-2-甲基丙酸甲酯、2-羥基-2-甲基丙酸乙酯、羥基乙酸甲酯、羥基乙酸乙酯、羥基乙酸丁酯、乳酸甲酯、乳酸乙酯、乳酸丙酯、乳酸丁酯、3-羥基丙酸甲酯、3-羥基丙酸乙酯、3-羥基丙酸丙酯、3-羥基丙酸丁酯、2-羥基-3-甲基丁酸甲酯、甲氧基乙酸甲酯、甲氧基乙酸乙酯、甲氧基乙酸丙酯、甲氧基乙酸丁酯、乙氧基乙酸甲酯、乙氧基乙酸乙酯、乙氧基乙酸丙酯、乙氧基乙酸丁酯、丙氧基乙酸甲酯、丙氧基乙酸乙酯、丙氧基乙酸丙酯、丙氧基乙酸丁酯、丁氧基乙酸甲酯、丁氧基乙酸乙酯、丁氧基乙酸丙酯、丁氧基乙酸丁酯、2-甲氧基丙酸甲酯、2-甲氧基丙酸乙酯、2-甲氧基丙酸丙酯、2-甲氧基丙酸丁酯、2-乙氧基丙酸甲酯、2-乙氧基丙酸乙酯等。 Examples of such a solvent include benzyl alcohol and diacetone alcohol; and examples of the ether include tetrahydrofuran or diisopropyl ether, di-n-butyl ether, di-n-pentyl ether, diisoamyl ether, and the like. Examples of the dialkyl ethers such as n-hexyl ether; and examples of the diethylene glycol alkyl ethers include diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol dimethyl ether, and diethylene glycol diethyl ether. And diethylene glycol methyl ether and the like; and examples of the ethylene glycol alkyl ether acetates include methyl cellosolve acetate, ethyl cellosolve acetate, ethylene glycol monobutyl ether acetate, and B. Examples of the propylene glycol monoether ethers include propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monopropyl ether, and propylene glycol monobutyl ether; and propylene glycol monoalkyl ether acetates include, for example, propylene glycol. Monomethyl ether acetate, propylene glycol monoethyl ether acetate, propylene glycol monopropyl ether acetate, propylene glycol monobutyl ether acetate, etc.; propylene glycol monoalkyl ether propionate, for example, propylene glycol monomethyl ether propionate Propylene glycol monoethyl ether propionate, propylene glycol monopropyl ether propionate, propylene glycol monobutyl ether propionic acid Examples of the aromatic hydrocarbons include toluene and xylene; and examples of the ketones include methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, 2-heptanone, and 4-hydroxy-4-methyl-2- Pentanone Examples of the esters include methyl acetate, ethyl acetate, propyl acetate, isopropyl acetate, butyl acetate, ethyl 2-hydroxypropionate, methyl 2-hydroxy-2-methylpropionate, and 2-hydroxyl group. Ethyl 2-methylpropionate, methyl hydroxyacetate, ethyl hydroxyacetate, butyl glycolate, methyl lactate, ethyl lactate, propyl lactate, butyl lactate, methyl 3-hydroxypropionate, 3 - ethyl hydroxypropionate, propyl 3-hydroxypropionate, butyl 3-hydroxypropionate, methyl 2-hydroxy-3-methylbutanoate, methyl methoxyacetate, ethyl methoxyacetate, Propyl methoxyacetate, butyl methoxyacetate, methyl ethoxyacetate, ethyl ethoxyacetate, propyl ethoxyacetate, butyl ethoxyacetate, methyl propoxyacetate, C Ethyl oxyacetate, propyl propoxyacetate, butyl propoxyacetate, methyl butoxyacetate, ethyl butoxyacetate, propyl butoxyacetate, butyl butoxyacetate, 2- Methyl methoxypropionate, ethyl 2-methoxypropionate, propyl 2-methoxypropionate, butyl 2-methoxypropionate, methyl 2-ethoxypropionate, 2- Ethyl ethoxypropionate and the like.
自溶解性或分散性優異、與各成分的非反應性、以及容易形成塗膜等觀點考慮,這些溶劑中優選二烷基醚等醚類、二乙二醇烷基醚類、乙二醇烷基醚乙酸酯類、丙二醇單烷基醚類、丙二醇單烷基醚乙酸酯類、酮類及酯類,特別優選二乙二醇二乙醚、二乙二醇甲乙醚、甲基溶纖劑乙酸酯、乙基溶纖劑乙酸酯、丙二醇單甲醚、丙二醇單乙醚、丙二醇單甲醚乙酸酯、丙二醇單乙醚乙酸酯、環己酮、乙酸丙酯、乙酸異丙酯、乙酸丁酯、2-羥基丙酸乙酯、2-羥基-2-甲基丙酸甲酯、2-羥基-2-甲基丙酸乙酯、乳酸甲酯、乳酸乙酯、乳酸丙酯、乳酸丁酯、2-甲氧基丙酸甲酯、2- 甲氧基丙酸乙酯。這些溶劑可單獨使用或者將2種以上混合使用。 Among these solvents, ethers such as dialkyl ethers, diethylene glycol alkyl ethers, and ethylene glycol alkane are preferred from the viewpoints of excellent solubility and dispersibility, non-reactivity with each component, and easy formation of a coating film. Ethyl ether acetates, propylene glycol monoalkyl ethers, propylene glycol monoalkyl ether acetates, ketones and esters, particularly preferably diethylene glycol diethyl ether, diethylene glycol methyl ethyl ether, methyl cellosolve B Acid ester, ethyl cellosolve acetate, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monomethyl ether acetate, propylene glycol monoethyl ether acetate, cyclohexanone, propyl acetate, isopropyl acetate, acetic acid Butyl ester, ethyl 2-hydroxypropionate, methyl 2-hydroxy-2-methylpropanoate, ethyl 2-hydroxy-2-methylpropionate, methyl lactate, ethyl lactate, propyl lactate, lactic acid Butyl ester, methyl 2-methoxypropionate, 2- Ethyl methoxypropionate. These solvents may be used singly or in combination of two or more.
而且,這些溶劑中優選二異丙基醚、二正丁基醚、二正戊基醚、二異戊基醚、二正己基醚等二烷基醚等醚類,最優選二異戊醚。藉由使用此種溶劑,可在用狹縫塗布法將本實施形態的感放射線性樹脂組成物塗布於例如大型玻璃基板上時,使乾燥步驟時間縮短,並且使塗布性更進一步提高(抑制塗布不均)。 Further, among these solvents, an ether such as a dialkyl ether such as diisopropyl ether, di-n-butyl ether, di-n-pentyl ether, diisoamyl ether or di-n-hexyl ether is preferable, and diisoamyl ether is most preferable. By using such a solvent, when the radiation sensitive resin composition of the present embodiment is applied to, for example, a large glass substrate by a slit coating method, the drying step time is shortened, and the coating property is further improved (suppression coating) Uneven).
除了上述溶劑以外,亦可進一步視需要併用苄基乙基醚、二己基醚、二乙二醇單甲醚、二乙二醇單乙醚、二乙二醇單丁醚、丙酮基丙酮、異佛爾酮、己酸、辛酸、1-辛醇、1-壬醇、苯甲醇、乙酸苄基酯、苯甲酸乙酯、草酸二乙酯、馬來酸二乙酯、γ-丁內酯、碳酸乙二酯、碳酸丙二酯、乙酸苯基溶纖劑、卡必醇乙酸酯等高沸點溶劑。 In addition to the above solvents, benzyl ethyl ether, dihexyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, diethylene glycol monobutyl ether, acetone acetone, and isophor may be further used as needed. Ketone, caproic acid, caprylic acid, 1-octanol, 1-nonanol, benzyl alcohol, benzyl acetate, ethyl benzoate, diethyl oxalate, diethyl maleate, γ-butyrolactone, carbonic acid A high boiling point solvent such as ethylene diester, propylene carbonate, phenyl cellosolve acetate or carbitol acetate.
由以上成分與調製方法所得到的感放射線性樹脂組成物可藉由低溫硬化而形成具有接觸孔的絕緣膜。例如,可藉由180℃~200℃等比先前技術低的硬化溫度而獲得具有耐溶劑性等良好的可靠性的絕緣膜。而且,可藉由低溫硬化而提供本實施形態的陣列基板。 The radiation sensitive resin composition obtained by the above components and the preparation method can form an insulating film having contact holes by low temperature hardening. For example, an insulating film having good reliability such as solvent resistance can be obtained by a curing temperature lower than that of the prior art such as 180 ° C to 200 ° C. Further, the array substrate of the present embodiment can be provided by low temperature curing.
其次,本實施形態的陣列基板可包含控制液晶配向的配向膜。作為本實施形態的陣列基板上所形成的配向膜,可使用本實施形態的液晶配向劑而形成。因此,於以下對本實施形態的配向處理劑,特別是其主要成分加以說明。 Next, the array substrate of the present embodiment may include an alignment film that controls the alignment of the liquid crystal. The alignment film formed on the array substrate of the present embodiment can be formed by using the liquid crystal alignment agent of the present embodiment. Therefore, the alignment treatment agent of the present embodiment, in particular, the main components thereof will be described below.
在本實施形態的陣列基板上形成配向膜的本實施形態的液晶配向劑是含有具有光配向性基的[L]感放射線性聚合物、或不具光配向性基的[M]聚醯亞胺作為主要成分的液晶配向劑。這些成分均可於例如200℃以下等低溫的加熱溫度下形成配向膜。特別是含有具有光配向性基的[L]感放射線性聚合物的液晶配向劑,可於更低溫下形成配向膜,是更優選的液晶配向劑。如上所述,本實施形態的液晶配向劑可藉由低溫的加熱步驟而形成配向膜,因此可不使設於下層的絕緣膜暴露於高溫加熱的狀態而形成配向膜。 The liquid crystal alignment agent of the present embodiment in which the alignment film is formed on the array substrate of the present embodiment is a [L] sensitizing radioactive polymer having a photoalignment group or a [M] polyimine having no photoalignment group. A liquid crystal alignment agent as a main component. These components can form an alignment film at a low temperature of, for example, 200 ° C or lower. In particular, a liquid crystal alignment agent containing a [L] radiation-sensitive polymer having a photo-alignment group can form an alignment film at a lower temperature, and is a more preferable liquid crystal alignment agent. As described above, since the liquid crystal alignment agent of the present embodiment can form the alignment film by the low-temperature heating step, the alignment film can be formed without exposing the insulating film provided on the lower layer to a high-temperature heating state.
另外,在本實施形態的陣列基板上形成配向膜的本實施形態的液晶配向劑只要不損及本發明的效果則可含有[N]其他成分。以下對這些成分加以說明。 Further, the liquid crystal alignment agent of the present embodiment in which the alignment film is formed on the array substrate of the present embodiment may contain [N] other components as long as the effects of the present invention are not impaired. These components are described below.
本實施形態的液晶配向劑中所含有的[L]感放射線性聚合物是具有光配向性基的聚合物。該[L]感放射線性聚合物所具有的光配向性基是藉由光照射而賦予膜各向異性的官能基,在本實施形態中,特別是藉由產生光異構化反應及光二聚反應的至少任意者而賦予膜各向異性的基。 The [L] radiation sensitive polymer contained in the liquid crystal alignment agent of the present embodiment is a polymer having a photoalignment group. The photoalignment group of the [L] radiation sensitive polymer is a functional group that imparts anisotropy to the film by light irradiation. In the present embodiment, in particular, photoisomerization reaction and photodimerization are produced. At least one of the reactions imparts an anisotropic substrate to the film.
作為光配向性基,具體而言為具有源自選自由偶氮苯、芪、α-亞胺基-β-酮酯、螺吡喃、螺噁嗪、肉桂酸、查耳酮、芪唑、苯亞甲基鄰苯二甲醯亞胺、香豆素、二苯基乙炔及蒽所構成的群組的至少1種化合物的結構的基。作為上述光配向性基,這些中特別優選具有源自肉桂酸的 結構的基。 The photo-alignment group is specifically derived from the group consisting of azobenzene, anthracene, α -imido-β-ketoester, spiropyran, spirooxazine, cinnamic acid, chalcone, carbazole, A group having a structure of at least one compound of the group consisting of benzylidene phthalimide, coumarin, diphenylacetylene, and hydrazine. As the photo-alignment group, those having a structure derived from cinnamic acid are particularly preferable.
作為具有光配向性基的[L]感放射線性聚合物,優選為上述光配向性基直接或經由連結基鍵結而成的聚合物。此種聚合物例如可列舉:在聚醯胺酸及聚醯亞胺的至少任意聚合物上鍵結有上述光配向性基而成的化合物;在與聚醯胺酸及聚醯亞胺不同的聚合物上鍵結有上述光配向性基而成的化合物。在後者的情況時,具有光配向性基的聚合物的基本骨架例如可列舉聚(甲基)丙烯酸酯、聚(甲基)丙烯醯胺、聚乙烯醚、聚烯烴、聚有機矽氧烷等。 The [L] radiation-sensitive polymer having a photo-alignment group is preferably a polymer in which the above-mentioned photo-alignment group is bonded directly or via a linking group. Examples of such a polymer include a compound obtained by bonding the above photo-alignment group to at least any polymer of polyglycine and polyimine; and different from poly-proline and polyimine. A compound in which the above photo-alignment group is bonded to the polymer. In the latter case, examples of the basic skeleton of the polymer having a photo-alignment group include poly(meth)acrylate, poly(meth)acrylamide, polyvinyl ether, polyolefin, polyorganosiloxane, and the like. .
作為感放射線性聚合物,優選以聚醯胺酸、聚醯亞胺或聚有機矽氧烷為基本骨架的感放射線性聚合物。而且,這些中特別優選聚有機矽氧烷,例如可藉由國際公開(WO)第2009/025386號說明書中所記載的方法而獲得。 As the radiation sensitive polymer, a radiation sensitive polymer having polyacetamide, polyamidimide or polyorganosiloxane as a basic skeleton is preferable. Further, among these, a polyorganosiloxane is particularly preferable, and it can be obtained, for example, by the method described in the specification of WO 2009/025386.
本實施形態的液晶配向劑中所含有的[M]聚醯亞胺是不具光配向性基的聚醯亞胺。 The [M] polyimine contained in the liquid crystal alignment agent of the present embodiment is a polyimide having no photo-alignment group.
此種不具光配向性基的[M]聚醯亞胺可藉由使不具光配向性基的聚醯胺酸脫水閉環而進行醯亞胺化而獲得。此種不具光配向性基的聚醯胺酸例如可藉由使四羧酸二酐與二胺反應而獲得,且可依照日本專利特開2010-97188號公報中所記載的方法而獲得。 Such a [M] polyimine which does not have a photo-alignment group can be obtained by hydrazine imidization by dehydration of a poly-proline which does not have a photo-alignment group. Such a poly-proline acid having no photo-alignment group can be obtained, for example, by reacting a tetracarboxylic dianhydride with a diamine, and can be obtained by the method described in JP-A-2010-97188.
[M]聚醯亞胺可以是作為其前驅物的聚醯胺酸所具有的醯胺酸結構全部脫水閉環而成的完全醯亞胺化物,亦可為醯胺酸結構的僅僅一部分脫水閉環、醯胺酸結構與醯亞 胺環結構並存的部分醯亞胺化物。[M]聚醯亞胺優選其醯亞胺化率為30%以上,更優選為50%~99%,進一步更優選為65%~99%。該醯亞胺化率是以百分率表示醯亞胺環結構數相對於聚醯亞胺的醯胺酸結構數與醯亞胺環結構數的合計所占的比例。此處,醯亞胺環的一部分亦可為異醯亞胺環,例如可如日本專利特開2010-97188號公報中所記載那樣而獲得。 [M] Polyimine may be a complete hydrazine imide formed by dehydration ring closure of the proline structure of polyglycine as its precursor, or may be only a part of the guanylate structure dehydration ring closure, Proline structure and 醯亚 A portion of the quinone imide that coexists with the amine ring structure. The [M] polyimine has a quinone imidization ratio of preferably 30% or more, more preferably 50% to 99%, still more preferably 65% to 99%. The ruthenium imidization ratio is a ratio of the number of quinone ring structures to the total number of guanidine structures and the number of quinone ring structures of the polyimine. Here, a part of the quinone ring may be an isoindole ring, and is obtained, for example, as described in JP-A-2010-97188.
本實施形態的液晶配向劑可含有具有光配向性基的感放射線性聚合物及不具光配向性基的聚醯亞胺以外的[N]其他成分。[N]其他成分例如可列舉具有光配向性基的[L]感放射線性聚合物及不具光配向性基的[M]聚醯亞胺以外的聚合物、硬化劑、硬化催化劑、硬化促進劑、環氧化合物、官能性矽烷化合物、表面活性劑、光敏劑等。 The liquid crystal alignment agent of the present embodiment may contain a radiation sensitive polymer having a photoalignment group and [N] other components other than the polyimide having no photoalignment group. Examples of the [N] other component include a [L] radiation-sensitive polymer having a photo-alignment group and a polymer other than the [M] poly-imine having no photo-alignment group, a curing agent, a curing catalyst, and a curing accelerator. An epoxy compound, a functional decane compound, a surfactant, a photosensitizer, and the like.
以上,對本實施形態的陣列基板的主要構成元件進行了說明,其次對本實施形態的陣列基板的製造方法加以說明。 The main constituent elements of the array substrate of the present embodiment have been described above, and the method of manufacturing the array substrate of the present embodiment will be described next.
於本實施形態的陣列基板的製造中,包含由上述本實施形態的感放射線性樹脂組成物而製造絕緣膜的步驟作為主要步驟。藉由該絕緣膜的製造步驟可形成形成有接觸孔的絕緣膜。而且,為了於本實施形態的陣列基板上形成配向膜,包含由上述本實施形態的液晶配向劑而形成配向膜的步驟作為製造步驟。以下,對具有絕緣膜與配向膜的本 實施形態的陣列基板的製造方法加以說明。 In the production of the array substrate of the present embodiment, the step of producing the insulating film from the radiation sensitive resin composition of the present embodiment is mainly the main step. An insulating film formed with a contact hole can be formed by the manufacturing process of the insulating film. Further, in order to form an alignment film on the array substrate of the present embodiment, a step of forming an alignment film by the liquid crystal alignment agent of the above-described embodiment is used as a production step. Hereinafter, the present invention has an insulating film and an alignment film A method of manufacturing an array substrate of the embodiment will be described.
於本實施形態的陣列基板的製造方法中,優選於基板上形成絕緣膜,且以下述順序而至少包含下述步驟[1]~步驟[4]。而且,為了於陣列基板上形成配向膜,優選於步驟[4]後包含步驟[5]。 In the method of manufacturing an array substrate of the present embodiment, it is preferable to form an insulating film on the substrate, and at least include the following steps [1] to [4] in the following order. Further, in order to form an alignment film on the array substrate, it is preferred to include the step [5] after the step [4].
[1]於形成有開關主動元件及電極等(表示源極、汲極、閘極、源配線、及閘配線等。以下有時總稱為電極等)的基板上形成感放射線性樹脂組成物塗膜的步驟(以下有時稱為“步驟[1]”)。 [1] Forming a radiation-sensitive resin composition on a substrate on which a switching active device, an electrode, or the like (a source, a drain, a gate, a source wiring, and a gate wiring, etc., which are collectively referred to as electrodes, etc.) are formed. The step of the membrane (hereinafter sometimes referred to as "step [1]").
[2]對步驟[1]中所形成的感放射線性樹脂組成物塗膜的至少一部分照射放射線的步驟(以下有時稱為“步驟[2]”)。 [2] A step of irradiating at least a part of the radiation-sensitive resin composition coating film formed in the step [1] with radiation (hereinafter sometimes referred to as "step [2]").
[3]對在步驟[2]中照射了放射線的塗膜進行顯影的步驟(以下有時稱為“步驟[3]”)。 [3] A step of developing a coating film irradiated with radiation in the step [2] (hereinafter sometimes referred to as "step [3]").
[4]對在步驟[3]中進行了顯影的塗膜進行加熱硬化而形成絕緣膜的步驟(以下有時稱為“步驟[4]”)。 [4] A step of forming an insulating film by heat-hardening the coating film developed in the step [3] (hereinafter sometimes referred to as "step [4]").
[5]於具有在步驟[4]中進行了硬化的絕緣膜的基板上形成液晶配向劑塗膜,於200℃以下對該塗膜進行加熱而形成配向膜的步驟(以下有時稱為“步驟[5]”)。 [5] A step of forming a liquid crystal alignment agent coating film on a substrate having an insulating film cured in the step [4], and heating the coating film at 200 ° C or lower to form an alignment film (hereinafter sometimes referred to as " Step [5]").
而且,於上述步驟[4]與步驟[5]之間,優選包含於步驟[4]中所形成的絕緣膜上設置透明電極的步驟。 Further, between the above steps [4] and [5], it is preferable to include a step of providing a transparent electrode on the insulating film formed in the step [4].
可藉由包含以上各步驟的本實施形態的陣列基板的製造方法,使用本實施形態的感放射線性樹脂組成物,於形成有開關主動元件或電極等的基板上形成包含接觸孔的 絕緣膜。而且,可使用本實施形態的液晶配向劑而於基板上形成配向膜。其結果,可藉由本實施形態的陣列基板的製造方法而形成本實施形態的陣列基板,其包含於所期望的位置形成有所期望的尺寸的接觸孔的絕緣膜,且包含在比先前技術低的溫度下所形成的絕緣膜。 The radiation-sensitive resin composition of the present embodiment can be used to form a contact-containing hole on a substrate on which a switching active device, an electrode, or the like is formed, by using the method for manufacturing an array substrate of the present embodiment including the above steps. Insulating film. Further, an alignment film can be formed on the substrate by using the liquid crystal alignment agent of the present embodiment. As a result, the array substrate of the present embodiment can be formed by the method for manufacturing an array substrate of the present embodiment, and includes an insulating film having a contact hole having a desired size at a desired position, and is included in the prior art. An insulating film formed at a temperature.
作為如上所述而製造的陣列基板,自節能的觀點考慮,於期望加熱步驟的低溫化的情況下也成為適宜的陣列基板。 The array substrate manufactured as described above is also an appropriate array substrate from the viewpoint of energy saving, in the case where it is desired to lower the temperature of the heating step.
以下,對各步驟加以詳述。 Hereinafter, each step will be described in detail.
於本步驟中,於基板上形成本實施形態的感放射線性樹脂組成物的塗膜。於該基板上形成有開關主動元件、源極、汲極、閘極、源配線、及閘配線等。這些開關主動元件等是於基板上反復進行藉由通常的半導體膜成膜、公知的絕緣層形成、光刻法的蝕刻等而藉由公知的方法所形成的元件。 In this step, a coating film of the radiation sensitive resin composition of the present embodiment is formed on the substrate. A switching active device, a source, a drain, a gate, a source wiring, a gate wiring, and the like are formed on the substrate. These switching active elements and the like are formed by repeating a conventional semiconductor film formation, a known insulating layer formation, etching by photolithography, or the like on a substrate by a known method.
於該基板的開關主動元件等的形成面塗布感放射線性樹脂組成物後,優選進行加熱(亦稱為預烘)而除去溶劑,從而形成塗膜。 After coating the radiation sensitive resin composition on the forming surface of the switching active device or the like of the substrate, it is preferable to perform heating (also referred to as prebaking) to remove the solvent to form a coating film.
基板的材料例如可列舉鈉鈣玻璃或無鹼玻璃等玻璃、石英、矽、樹脂等。樹脂的具體例可列舉聚對苯二甲酸乙二酯、聚對苯二甲酸丁二酯、聚醚碸、聚碳酸酯、芳香族聚醯胺、聚醯胺醯亞胺、聚醯亞胺、環狀烯烴的開環聚合物及其氫化物等。而且,亦可視需要對這些基板預先 實施藉由矽烷偶聯劑等的藥劑處理、電漿處理、離子鍍、濺射、氣相反應法、真空蒸鍍等適宜的預處理。 Examples of the material of the substrate include glass such as soda lime glass or alkali-free glass, quartz, rhodium, and resin. Specific examples of the resin include polyethylene terephthalate, polybutylene terephthalate, polyether oxime, polycarbonate, aromatic polyamine, polyamidimide, polyimine, A ring-opening polymer of a cyclic olefin, a hydride thereof, or the like. Moreover, these substrates can also be pre-positioned as needed. An appropriate pretreatment such as a chemical treatment such as a decane coupling agent, a plasma treatment, ion plating, sputtering, a gas phase reaction method, or a vacuum vapor deposition is carried out.
感放射線性樹脂組成物的塗布方法例如可採用噴霧法、輥塗法、旋塗法(有時亦稱為旋轉塗布法或旋轉器法)、狹縫塗布法(狹縫口模塗布法)、棒式塗布法、噴墨塗布法等適宜的方法。這些方法中優選旋塗法或狹縫塗布法。 The coating method of the radiation sensitive resin composition can be, for example, a spray method, a roll coating method, a spin coating method (also sometimes referred to as a spin coating method or a rotator method), a slit coating method (slit die coating method), or the like. A suitable method such as a bar coating method or an inkjet coating method. Among these methods, a spin coating method or a slit coating method is preferred.
上述預烘條件因各成分的種類、調配比例等而異,優選為70℃~120℃,可設為1分鐘~10分鐘左右。 The pre-baking conditions vary depending on the type of each component, the blending ratio, and the like, and are preferably from 70 ° C to 120 ° C, and may be from about 1 minute to 10 minutes.
其次,在步驟[2]中,對步驟[1]中所形成的塗膜的至少一部分照射放射線。此時,當僅對塗膜的一部分進行照射時,例如可藉由介隔與形成所期望的接觸孔對應的掩模圖案的光掩模而進行照射的方法。 Next, in the step [2], at least a part of the coating film formed in the step [1] is irradiated with radiation. At this time, when only a part of the coating film is irradiated, for example, a method of irradiating with a photomask that forms a mask pattern corresponding to a desired contact hole can be performed.
照射中所使用的放射線適宜的是對光產酸劑所使用的放射線。這些放射線中,優選波長處於190 nm~450 nm的範圍的放射線,特別優選包含365 nm的紫外線的放射線。 The radiation used in the irradiation is preferably a radiation used for the photoacid generator. Among these radiations, radiation having a wavelength in the range of 190 nm to 450 nm is preferable, and radiation containing ultraviolet rays of 365 nm is particularly preferable.
放射線照射量(曝光量)是藉由照度計(OAI model 356、Optical Associates Inc.製造)而測定所照射的放射線的波長365 nm下的強度的值,優選為100 J/m2~3,000 J/m2,更優選為500 J/m2~2,000 J/m2。 The radiation exposure amount (exposure amount) is a value obtained by measuring the intensity at a wavelength of 365 nm of the irradiated radiation by an illuminometer (OAI model 356, manufactured by Optical Associates Inc.), and is preferably 100 J/m 2 to 3,000 J/ m 2 is more preferably 500 J/m 2 to 2,000 J/m 2 .
其次,在步驟[3]中,藉由對放射線照射後的塗膜進行顯影,將不需要部分(放射線的照射部分)除去,從而獲 得具有規定形狀,形成有所期望的接觸孔的塗膜。 Next, in the step [3], the coating film after the radiation irradiation is developed, and the unnecessary portion (irradiated portion of the radiation) is removed, thereby obtaining A coating film having a predetermined shape and having a desired contact hole is formed.
顯影中所使用的顯影液優選鹼性的水溶液。所含有的鹼的例子可列舉氫氧化鈉、氫氧化鉀、碳酸鈉、矽酸鈉、偏矽酸鈉、氨等無機鹼;四甲基氫氧化銨、四乙基氫氧化銨等季銨鹽等。 The developing solution used in the development is preferably an alkaline aqueous solution. Examples of the base to be contained include inorganic bases such as sodium hydroxide, potassium hydroxide, sodium carbonate, sodium citrate, sodium metasilicate, and ammonia; quaternary ammonium salts such as tetramethylammonium hydroxide and tetraethylammonium hydroxide. Wait.
而且,此種鹼性水溶液中亦可添加適當量的甲醇、乙醇等水溶性有機溶劑或表面活性劑而使用。自獲得適當的顯影性的觀點考慮,鹼性水溶液中的鹼的濃度可優選設為0.1質量%~5質量%。顯影方法例如可藉由覆液法、浸漬法、振盪浸漬法、噴淋法等適宜的方法。顯影時間因感放射線性樹脂組成物的組成而異,優選為10秒~180秒左右。繼此種顯影處理後,例如進行30秒~90秒的流水清洗,然後例如用壓縮空氣或壓縮氮氣使其風乾,由此可形成所期望的圖案。 Further, an appropriate amount of a water-soluble organic solvent such as methanol or ethanol or a surfactant may be added to the alkaline aqueous solution. The concentration of the alkali in the alkaline aqueous solution is preferably from 0.1% by mass to 5% by mass from the viewpoint of obtaining appropriate developability. The developing method can be, for example, a suitable method such as a liquid coating method, a dipping method, a shaking dipping method, or a shower method. The development time varies depending on the composition of the radiation sensitive resin composition, and is preferably from about 10 seconds to about 180 seconds. After such development treatment, for example, a running water cleaning is performed for 30 seconds to 90 seconds, and then air-dried, for example, with compressed air or compressed nitrogen gas, whereby a desired pattern can be formed.
其次,在步驟[4]中,可使用熱板、烘箱等加熱裝置,對圖案化的薄膜進行加熱(亦稱為後烘),由此促進感放射線性樹脂組成物中所含有的[A]聚合物的硬化反應,製成具有所期望的特性的硬化膜而獲得絕緣膜。本步驟中的加熱溫度例如優選為120℃~220℃。而且,在使用含有上述[C]成分而構成的本實施形態的感放射線性樹脂組成物的情況下,優選將本步驟中的加熱溫度設為例如120℃~200℃,更優選設為成為更低溫的120℃~180℃。 Next, in the step [4], the patterned film may be heated (also referred to as post-baking) using a heating means such as a hot plate or an oven, thereby promoting the [A] contained in the radiation-sensitive resin composition. The hardening reaction of the polymer produces a cured film having desired characteristics to obtain an insulating film. The heating temperature in this step is, for example, preferably from 120 ° C to 220 ° C. In the case where the radiation sensitive resin composition of the present embodiment comprising the above-mentioned [C] component is used, the heating temperature in this step is preferably, for example, 120 ° C to 200 ° C, and more preferably Low temperature of 120 ° C ~ 180 ° C.
加熱時間因加熱機器的種類而異,例如在熱板上進行 加熱步驟的情況下,可設為5分鐘~30分鐘;在烘箱中進行加熱步驟的情況下,可設為30分鐘~90分鐘。亦可使用進行2次以上加熱步驟的分步烘烤法等。如上所述地進行,可在基板上形成設為目標的具有接觸孔的絕緣膜。所形成的絕緣膜的膜厚優選為0.1 μm~8 μm,更優選為0.1 μm~6 μm,進一步更優選為0.1 μm~4 μm。 The heating time varies depending on the type of heating machine, for example on a hot plate In the case of the heating step, it can be set to 5 minutes to 30 minutes, and when the heating step is performed in an oven, it can be set to 30 minutes to 90 minutes. A step-by-step baking method or the like which performs two or more heating steps may also be used. As described above, an insulating film having a contact hole to be targeted can be formed on the substrate. The film thickness of the formed insulating film is preferably 0.1 μm to 8 μm, more preferably 0.1 μm to 6 μm, still more preferably 0.1 μm to 4 μm.
藉由依照以上的步驟,本實施形態的感放射線性樹脂組成物可作為具有接觸孔的絕緣膜的形成材料而適宜使用,並且可形成本實施形態的陣列基板的絕緣膜。 By the above steps, the radiation sensitive resin composition of the present embodiment can be suitably used as a material for forming an insulating film having a contact hole, and an insulating film of the array substrate of the present embodiment can be formed.
而且,優選在步驟[4]中形成絕緣膜後,包含在該絕緣膜上設置透明電極的步驟。例如,可利用濺鍍法等而於絕緣膜上形成包含ITO的透明導電層。其次,可利用光刻法而對該透明導電層進行蝕刻,於絕緣膜上形成透明電極。透明電極構成像素電極,藉由經由絕緣膜的接觸孔而可與基板上的開關主動元件電性連接。另外,透明電極除了ITO以外,可使用具有對於可見光而言高的透射率與導電性的透明材料而構成。例如可使用氧化銦鋅(Indium Zinc Oxide,IZO)或ZnO(氧化鋅)或氧化錫等而構成。 Further, it is preferable to include a step of providing a transparent electrode on the insulating film after the insulating film is formed in the step [4]. For example, a transparent conductive layer containing ITO can be formed on the insulating film by a sputtering method or the like. Next, the transparent conductive layer can be etched by photolithography to form a transparent electrode on the insulating film. The transparent electrode constitutes a pixel electrode, and is electrically connected to the switching active element on the substrate via a contact hole of the insulating film. Further, the transparent electrode can be formed using a transparent material having high transmittance and conductivity for visible light in addition to ITO. For example, indium zinc oxide (Indium Zinc Oxide, IZO), ZnO (zinc oxide), tin oxide, or the like can be used.
使用步驟[4]中所得的附有絕緣膜的基板,如上所述地於絕緣膜上形成透明電極後,於透明電極上塗布本實施形態的液晶配向劑。塗布方法例如可使用輥塗法、旋塗法、印刷法、噴墨法等適宜的塗布方法。其次,對塗布有液晶配向劑的基板進行預烘,其後進行後烘而形成塗膜,由此 而製造陣列基板。預烘條件例如是在40℃~120℃下為0.1分鐘~5分鐘。後烘條件是在120℃~230℃、優選為150℃~200℃、更優選為150℃~180℃下進行優選為5分鐘~200分鐘、更優選為10分鐘~100分鐘。後烘後的塗膜的膜厚優選為0.001 μm~1 μm,更優選為0.005 μm~0.5 μm。 Using the insulating film-attached substrate obtained in the step [4], a transparent electrode was formed on the insulating film as described above, and then the liquid crystal alignment agent of the present embodiment was applied onto the transparent electrode. As the coating method, for example, a suitable coating method such as a roll coating method, a spin coating method, a printing method, or an inkjet method can be used. Next, the substrate coated with the liquid crystal alignment agent is prebaked, and then post-baked to form a coating film. The array substrate is fabricated. The prebaking conditions are, for example, from 0.1 to 5 minutes at 40 to 120 °C. The post-baking conditions are preferably from 5 minutes to 200 minutes, more preferably from 10 minutes to 100 minutes, at from 120 ° C to 230 ° C, preferably from 150 ° C to 200 ° C, more preferably from 150 ° C to 180 ° C. The film thickness of the coating film after post-baking is preferably 0.001 μm to 1 μm, and more preferably 0.005 μm to 0.5 μm.
於塗布液晶配向劑時所使用的液晶配向劑的固形物濃度(液晶配向劑的溶劑以外的成分的合計重量在液晶配向劑的總重量中所占的比例)可考慮黏性、揮發性等而適宜選擇,優選為1重量%~10重量%的範圍。 The solid content concentration of the liquid crystal alignment agent used in the liquid crystal alignment agent (the ratio of the total weight of the components other than the solvent of the liquid crystal alignment agent to the total weight of the liquid crystal alignment agent) can be considered in terms of viscosity, volatility, and the like. Suitably, it is preferably in the range of 1% by weight to 10% by weight.
在液晶配向劑使用包含具有光配向性基的[L]感放射線性聚合物的液晶配向劑的情況時,藉由在上述塗膜照射直線偏光或部分偏光的放射線、或非偏光的放射線而賦予控制液晶配向的液晶配向能力。如此的偏光放射線照射與配向膜的配向處理對應。此處,放射線例如可使用包含150 nm~800 nm的波長光的紫外線及可見光線。特別優選使用包含300 nm~400 nm的波長光的紫外線作為放射線。當所使用的放射線為直線偏光或部分偏光的情況時,照射可自垂直於基板面的方向進行,也可以自斜方向進行以對液晶賦予預傾角,而且亦可將這些方法組合而進行。在照射非偏光的放射線的情況時,照射方向必需是斜方向。 When a liquid crystal alignment agent containing a [L] radiation sensitive polymer having a photoalignment group is used as the liquid crystal alignment agent, the coating film is irradiated with linearly polarized or partially polarized radiation or non-polarized radiation. Controls the liquid crystal alignment ability of liquid crystal alignment. Such polarized radiation irradiation corresponds to the alignment treatment of the alignment film. Here, as the radiation, for example, ultraviolet rays and visible rays including wavelengths of light of 150 nm to 800 nm can be used. It is particularly preferable to use ultraviolet rays containing light having a wavelength of 300 nm to 400 nm as radiation. When the radiation to be used is linearly polarized or partially polarized, the irradiation may be performed from a direction perpendicular to the substrate surface, or may be performed from a diagonal direction to impart a pretilt angle to the liquid crystal, or these methods may be combined. In the case of irradiating non-polarized radiation, the irradiation direction must be an oblique direction.
放射線的照射量優選為1 J/m2以上且不足10,000 J/m2,更優選為10 J/m2~3,000 J/m2。 The irradiation amount of the radiation is preferably 1 J/m 2 or more and less than 10,000 J/m 2 , and more preferably 10 J/m 2 to 3,000 J/m 2 .
在液晶配向劑使用包含不具光配向性基的[M]聚醯亞 胺的液晶配向劑的情況時,亦可將後烘後的塗膜直接用作配向膜。而且,亦可視需要對後烘後的塗膜實施例如用捲繞有包含尼龍、人造絲、棉等纖維的布的輥在固定方向上進行摩擦的處理(摩擦處理),從而賦予液晶配向能力。 In the liquid crystal alignment agent, [M] polyazide containing no photo-alignment group is used. In the case of an amine liquid crystal alignment agent, the post-baking coating film can also be used as an alignment film as it is. Further, the post-baking coating film may be subjected to a rubbing treatment (friction treatment) in a fixing direction by, for example, a roll wound with a cloth comprising fibers such as nylon, rayon, or cotton, to impart liquid crystal alignment ability.
如上所述於陣列基板上形成配向膜的情況下,可使用上述液晶配向劑而在200℃以下的加熱溫度、進一步為180℃以下的加熱溫度下形成配向膜。因此,可避免在上述步驟[1]~步驟[4]中所形成的絕緣膜在配向膜的形成步驟中暴露於高溫的狀態下。而且,本實施形態的陣列基板可包含具有所期望的配置與尺寸的接觸孔的絕緣膜與配向膜,且可藉由在比先前技術低的溫度下的加熱而製造。 When the alignment film is formed on the array substrate as described above, the alignment film can be formed at a heating temperature of 200 ° C or lower and a heating temperature of 180 ° C or lower using the liquid crystal alignment agent. Therefore, the insulating film formed in the above steps [1] to [4] can be prevented from being exposed to a high temperature in the step of forming the alignment film. Further, the array substrate of the present embodiment may include an insulating film and an alignment film having contact holes of a desired configuration and size, and may be fabricated by heating at a temperature lower than that of the prior art.
以下,基於實例對本發明的實施形態加以詳述,但並不以該實例而對本發明進行限定性解釋。 Hereinafter, the embodiments of the present invention will be described in detail based on examples, but the present invention is not limited by the examples.
於以下中,聚合物的質量平均分子量(Mw)及數量平均分子量(Mn)可藉由根據下述條件的凝膠滲透層析法(GPC)而測定。 In the following, the mass average molecular weight (Mw) and the number average molecular weight (Mn) of the polymer can be determined by gel permeation chromatography (GPC) according to the following conditions.
裝置:GPC-101(昭和電工株式會社製造) Device: GPC-101 (made by Showa Denko Co., Ltd.)
管柱:將GPC-KF-801、GPC-KF-802、GPC-KF-803及GPC-KF-804加以結合 Column: Combine GPC-KF-801, GPC-KF-802, GPC-KF-803 and GPC-KF-804
流動相:四氫呋喃 Mobile phase: tetrahydrofuran
管柱溫度:40℃ Column temperature: 40 ° C
流速:1.0 mL/min Flow rate: 1.0 mL/min
試樣濃度:1.0質量% Sample concentration: 1.0% by mass
試樣注入量:100 μL Sample injection amount: 100 μL
檢測器:示差折射儀 Detector: differential refractometer
標準物質:單分散聚苯乙烯 Reference material: monodisperse polystyrene
在具有冷凝管及攪拌機的燒瓶中裝入2,2'-偶氮雙(2,4-二甲基戊腈)7質量份、二乙二醇甲乙醚200質量份。其次投入甲基丙烯酸5質量份、甲基丙烯酸-2-四氫吡喃基酯40質量份、苯乙烯5質量份、甲基丙烯酸縮水甘油酯40質量份、甲基丙烯酸-2-羥基乙酯10質量份及α-甲基苯乙烯二聚物3質量份並進行氮氣置換後,緩緩開始攪拌。使溶液的溫度上升至70℃,將該溫度保持5小時而獲得包含共聚物(A-1)的聚合物溶液。共聚物(A-1)的聚苯乙烯換算質量平均分子量(Mw)為9,000。而且,此處所得的聚合物溶液的固形物濃度為31.3質量%。 In a flask equipped with a condenser and a stirrer, 7 parts by mass of 2,2'-azobis(2,4-dimethylvaleronitrile) and 200 parts by mass of diethylene glycol methyl ethyl ether were placed. Next, 5 parts by mass of methacrylic acid, 40 parts by mass of 2-tetrahydropyranyl methacrylate, 5 parts by mass of styrene, 40 parts by mass of glycidyl methacrylate, and 2-hydroxyethyl methacrylate were charged. After 10 parts by mass and 3 parts by mass of the α-methylstyrene dimer and nitrogen substitution, the stirring was gradually started. The temperature of the solution was raised to 70 ° C, and the temperature was maintained for 5 hours to obtain a polymer solution containing the copolymer (A-1). The polystyrene-equivalent mass average molecular weight (Mw) of the copolymer (A-1) was 9,000. Further, the solid solution concentration of the polymer solution obtained here was 31.3% by mass.
在具有冷凝管及攪拌機的燒瓶中裝入2,2'-偶氮雙(2-甲基丙酸甲酯)7質量份、丙二醇單甲醚乙酸酯200質量份。其次投入甲基丙烯酸-2-四氫吡喃基酯85質量份、甲基丙烯酸-2-羥基乙酯7質量份、甲基丙烯酸8質量份並進行氮氣置換後,緩緩開始攪拌。使溶液的溫度上升至80℃,將該溫度保持6小時而獲得包含共聚物(a-1)的聚合物溶液。共聚物(a-1)的聚苯乙烯換算質量平均分子量(Mw)為10,000。而且,此處所得的聚合物溶液的固形 物濃度為29.2質量%。 In a flask equipped with a condenser and a stirrer, 7 parts by mass of 2,2'-azobis(2-methylpropionate) and 200 parts by mass of propylene glycol monomethyl ether acetate were placed. Next, 85 parts by mass of 2-tetrahydropyranyl methacrylate, 7 parts by mass of 2-hydroxyethyl methacrylate, and 8 parts by mass of methacrylic acid were placed and replaced with nitrogen, and then stirring was gradually started. The temperature of the solution was raised to 80 ° C, and the temperature was maintained for 6 hours to obtain a polymer solution containing the copolymer (a-1). The polystyrene-equivalent mass average molecular weight (Mw) of the copolymer (a-1) was 10,000. Moreover, the solid solution of the polymer solution obtained here The concentration of the substance was 29.2% by mass.
在具有冷凝管及攪拌機的燒瓶中裝入2,2'-偶氮雙(2,4-二甲基戊腈)7質量份、二乙二醇甲乙醚200質量份。其次投入甲基丙烯酸縮水甘油酯52質量份、甲基丙烯酸苄基酯48質量份並進行氮氣置換後,緩緩開始攪拌。使溶液的溫度上升至80℃,將該溫度保持6小時而獲得包含共聚物(aa-1)的聚合物溶液。共聚物(aa-1)的聚苯乙烯換算質量平均分子量(Mw)為10,000。而且,此處所得的聚合物溶液的固形物濃度為32.3質量%。 In a flask equipped with a condenser and a stirrer, 7 parts by mass of 2,2'-azobis(2,4-dimethylvaleronitrile) and 200 parts by mass of diethylene glycol methyl ethyl ether were placed. Next, 52 parts by mass of glycidyl methacrylate and 48 parts by mass of benzyl methacrylate were added and replaced with nitrogen, and then stirring was gradually started. The temperature of the solution was raised to 80 ° C, and the temperature was maintained for 6 hours to obtain a polymer solution containing the copolymer (aa-1). The polystyrene-equivalent mass average molecular weight (Mw) of the copolymer (aa-1) was 10,000. Further, the solid solution concentration of the polymer solution obtained here was 32.3% by mass.
於包含合成例1中所得的共聚物(A-1)的溶液(相當於共聚物(A-1)100質量份(固形物)的量)中混合作為[B]成分的[(樟腦磺醯基氧基亞胺基-5H-噻吩-2-亞基)-(2-甲基苯基)乙腈](BASF公司製造的“CGI1380”)4質量份、作為[D]成分的成為抗氧化劑的三-(3,5-二-第三丁基-4-羥基苄基)-異三聚氰酸酯(ADEKA公司製造的“Adekastab AO-20”)1質量份、作為[D]成分的矽酮類表面活性劑(東麗道康寧株式會社製造的“SH 8400 FLUID”)0.20質量份、作為[D]成分的γ-縮水甘油氧基丙基三甲氧基矽烷3.0質量份,使用孔徑為0.2 μm的薄膜過濾器進行過濾,由此調製感放射線性樹脂組成物(S-1)。 In the solution containing the copolymer (A-1) obtained in Synthesis Example 1 (corresponding to the amount of the copolymer (A-1) in an amount of 100 parts by mass (solid matter)), [( camphorsulfonamide) was mixed as the component [B]. 4 parts by mass of oxyiminoimido-5H-thiophene-2-ylidene)-(2-methylphenyl)acetonitrile] ("CGI1380" manufactured by BASF Corporation), which is an antioxidant as a component [D] Tris-(3,5-di-t-butyl-4-hydroxybenzyl)-isocyanurate ("Adekastab AO-20" manufactured by ADEKA Co., Ltd.) 1 part by mass, as a component of [D] 0.20 parts by mass of ketone surfactant ("SH 8400 FLUID" manufactured by Toray Dow Corning Co., Ltd.), 3.0 parts by mass of γ-glycidoxypropyltrimethoxydecane as the component [D], and a pore diameter of 0.2 μm. The membrane filter was filtered to thereby modulate the radiation sensitive resin composition (S-1).
於包含合成例2與合成例3中所得的共聚物(a-1)與共聚物(aa-1)的溶液(相當於將共聚物(a-1)與共聚物(aa-1)各50質量份(固形物)以1比1的比例混合而成的合計100質量份的量)中混合作為[B]成分的[(5-丙基磺醯基氧基亞胺基-5H-噻吩-2-亞基)-(2-甲基苯基)乙腈](BASF公司製造的“IRGACURE PAG 103”)4質量份、作為[C]成分的4,4'-二胺基二苯基碸0.5質量份、作為[D]成分的成為抗氧化劑的三-(3,5-二-第三丁基-4-羥基苄基)-異三聚氰酸酯(ADEKA公司製造的“Adekastab AO-20”)1質量份、作為[D]成分的矽酮類表面活性劑(東麗道康寧株式會公司製造的“SH 8400 FLUID”)0.20質量份、作為[D]成分的γ-縮水甘油氧基丙基三甲氧基矽烷3.0質量份,使用孔徑為0.2 μm的薄膜過濾器進行過濾,由此調製感放射線性樹脂組成物(S-2)。 A solution containing the copolymer (a-1) and the copolymer (aa-1) obtained in Synthesis Example 2 and Synthesis Example 3 (corresponding to 50% of copolymer (a-1) and copolymer (aa-1)) [(5-propylsulfonyloxyimino-5H-thiophene-[(5-propylsulfonyloxyimino)-5H-thiophene] as a component [B] in a mass ratio (solid content) in a total of 100 parts by mass in a ratio of 1 to 1) 4-methylene)-(2-methylphenyl)acetonitrile] ("IRGACURE PAG 103" manufactured by BASF Corporation) 4 parts by mass of 4,4'-diaminodiphenylphosphonium as component [C] A mass fraction of tris-(3,5-di-t-butyl-4-hydroxybenzyl)-isocyanurate which is an antioxidant in the [D] component (Adekastab AO-20, manufactured by ADEKA) "1" by mass of an anthrone-based surfactant ("SH 8400 FLUID" manufactured by Toray Dow Corning Co., Ltd.) as a component [D], 0.20 parts by mass, γ-glycidoxypropyl group as a component [D] 3.0 parts by mass of methoxymethoxysilane was filtered using a membrane filter having a pore size of 0.2 μm to prepare a radiation sensitive resin composition (S-2).
使用藉由實例1及實例2所調製的感放射線性樹脂組成物(S-1、S-2),如下所述地評價特性,且對由這些感放射線性樹脂組成物所形成的塗膜或作為其硬化膜而獲得的絕緣膜評價各種特性。 Using the radiation sensitive resin composition (S-1, S-2) prepared by the example 1 and the example 2, the characteristics were evaluated as described below, and the coating film formed of these radiation sensitive resin compositions or The insulating film obtained as the cured film thereof evaluated various characteristics.
於550 mm×650 mm的鉻成膜玻璃上塗布六甲基二矽氮烷(HMDS),於60℃下進行1分鐘的加熱(以下亦稱為“HMDS處理”)。在該HMDS處理後的鉻成膜玻璃上, 使用狹縫口模塗布機“TR632105-CL”而塗布實例1中所調製的感放射線性樹脂組成物S-1,將到達壓力設定為100 Pa而於真空下將溶劑除去。其後,進一步於90℃下進行2分鐘的預烘,由此形成膜厚為3.0 μm的塗膜。其次,使用佳能株式會社製造的MPA-600FA曝光機,介隔具有60 μm的線與間隙(10比1)的掩模圖案的掩模,將曝光量設為變量而對塗膜照射放射線後,用覆液法於0.40質量%的濃度的四甲基氫氧化銨水溶液中、25℃下進行顯影。此處,將顯影時間設為80秒。其次,以超純水進行1分鐘的流水清洗,其後進行乾燥,由此而在HMDS處理後的鉻成膜玻璃基板上形成圖案。此時,調查用以使6 μm的間隔圖案完全溶解所必需的曝光量而進行評價。在該值為500 J/m2以下的情況下,可判斷成感光度良好。於使用感放射線性樹脂組成物S-1而形成的圖案中,其值成為500 J/m2以下,可知感放射線性樹脂組成物S-1的放射線感光度良好。 Hexamethyldioxane (HMDS) was applied to a 550 mm × 650 mm chromium film-forming glass and heated at 60 ° C for 1 minute (hereinafter also referred to as "HMDS treatment"). On the HMDS-treated chromium film-forming glass, the radiation-sensitive resin composition S-1 prepared in Example 1 was applied using a slit die coater "TR632105-CL", and the arrival pressure was set to 100 Pa. The solvent was removed under vacuum. Thereafter, prebaking was further carried out at 90 ° C for 2 minutes to form a coating film having a film thickness of 3.0 μm. Then, using a MPA-600FA exposure machine manufactured by Canon Inc., a mask having a mask pattern of 60 μm line and gap (10 to 1) was interposed, and the exposure amount was set as a variable to irradiate the coating film with radiation. The development was carried out by a coating method at a concentration of 0.40% by mass in a tetramethylammonium hydroxide aqueous solution at 25 °C. Here, the development time was set to 80 seconds. Next, the water was washed with ultrapure water for 1 minute, and then dried, whereby a pattern was formed on the chrome-crystallized glass substrate after the HMDS treatment. At this time, the amount of exposure necessary for completely dissolving the 6 μm interval pattern was examined and evaluated. When the value is 500 J/m 2 or less, it can be judged that the sensitivity is good. In the pattern formed by using the radiation sensitive resin composition S-1, the value is 500 J/m 2 or less, and it is understood that the radiation sensitivity of the radiation sensitive resin composition S-1 is good.
其次,使用實例2中所調製的感放射線性樹脂組成物S-2,依照與上述同樣的方法進行放射線感光度的評價。於使用感放射線性樹脂組成物S-2而形成的圖案中,上述值成為500 J/m2以下,可知感放射線性樹脂組成物S-2的放射線感光度良好。 Next, using the radiation sensitive resin composition S-2 prepared in Example 2, the radiation sensitivity was evaluated in the same manner as described above. In the pattern formed by using the radiation sensitive resin composition S-2, the above value is 500 J/m 2 or less, and it is understood that the radiation sensitivity of the radiation sensitive linear resin composition S-2 is good.
使用旋轉器將實例1中所調製的感放射線性樹脂組成物S-1塗布於玻璃基板上,然後於90℃下在熱板上進行2分鐘的預烘而形成膜厚為3.0 μm的塗膜。將該玻璃基板於 潔淨烘箱內、220℃下進行1小時的後烘,製成硬化膜而獲得絕緣膜。用UV照射裝置(Ushio公司製造的“UVX-02516S1JS01”)以130 mW的照度對該絕緣膜照射800,000 J/m2。 The radiation sensitive resin composition S-1 prepared in Example 1 was applied onto a glass substrate using a spinner, and then prebaked on a hot plate at 90 ° C for 2 minutes to form a coating film having a film thickness of 3.0 μm. . The glass substrate was post-baked in a clean oven at 220 ° C for 1 hour to form a cured film to obtain an insulating film. The insulating film was irradiated with 800,000 J/m 2 with an illumination of 130 mW using a UV irradiation device ("UVX-02516S1JS01" manufactured by Ushio Co., Ltd.).
與照射前的膜厚進行比較,若照射後的膜厚的膜減少量為2%以下,則可判斷成膜的耐光性良好。在使用感放射線性樹脂組成物S-1而形成的絕緣膜中,膜減少量成為2%以下,可知具有良好的耐光性。 When the amount of film reduction of the film thickness after irradiation is 2% or less, it can be judged that the light resistance of the film formation is good, compared with the film thickness before irradiation. In the insulating film formed by using the radiation sensitive resin composition S-1, the film reduction amount was 2% or less, and it was found to have good light resistance.
其次,使用實例2中所調製的感放射線性樹脂組成物S-2,將在潔淨烘箱內所進行的後烘的溫度設為180℃,除此以外依照與上述同樣的方法而形成絕緣膜。其次,依照與上述同樣的方法進行所得的絕緣膜的耐光性的評價。使用感放射線性樹脂組成物S-2而形成的絕緣膜的膜減少量成為2%以下,可知具有良好的耐光性。 Next, an insulating film was formed in the same manner as described above except that the temperature of the post-baking performed in the clean oven was 180 ° C using the radiation-sensitive resin composition S-2 prepared in Example 2. Next, the light resistance of the obtained insulating film was evaluated in the same manner as above. The amount of film reduction of the insulating film formed by using the radiation sensitive resin composition S-2 was 2% or less, and it was found to have good light resistance.
另外,在以上的耐光性的評價中,並不需要所形成的膜圖案化,因此省略了顯影步驟,僅僅進行塗膜形成步驟、耐光性試驗及加熱步驟而進行評價。 Further, in the evaluation of the above light resistance, the formed film was not required to be patterned, and thus the development step was omitted, and only the coating film forming step, the light resistance test, and the heating step were performed and evaluated.
與上述的耐光性的評價同樣地使用實例1中所調製的感放射線性樹脂組成物S-1,在矽基板上形成塗膜。將該矽基板在潔淨烘箱內、220℃下進行1小時的加熱,製成硬化膜而獲得絕緣膜。其次,測定所得的絕緣膜的膜厚(T1)。其次,將形成有該絕緣膜的矽基板在潔淨烘箱內、240℃下進行1小時的追加烘烤後,測定追加烘烤後的絕緣 膜的膜厚(t1),算出由於追加烘烤而造成的膜厚變化率{| t1-T1 |/T1}×100[%]。當膜厚變化率為3%以下時,可判斷成耐熱性良好。在使用感放射線性樹脂組成物S-1而形成的絕緣膜中,膜厚變化率成為3%以下,可知具有良好的耐熱性。 The radiation-sensitive resin composition S-1 prepared in Example 1 was used in the same manner as the evaluation of the light resistance described above to form a coating film on the ruthenium substrate. The tantalum substrate was heated in a clean oven at 220 ° C for 1 hour to obtain a cured film to obtain an insulating film. Next, the film thickness (T1) of the obtained insulating film was measured. Next, the tantalum substrate on which the insulating film was formed was additionally baked in a clean oven at 240 ° C for 1 hour, and then the insulation after additional baking was measured. The film thickness (t1) of the film was calculated as a film thickness change rate {| t1 - T1 | / T1} × 100 [%] due to additional baking. When the film thickness change rate is 3% or less, it can be judged that the heat resistance is good. In the insulating film formed by using the radiation sensitive resin composition S-1, the film thickness change rate is 3% or less, and it is understood that the film has good heat resistance.
其次,使用實例2中所調製的感放射線性樹脂組成物S-2,將在潔淨烘箱內所進行的加熱溫度設為180℃,除此以外依照與上述同樣的方法而形成絕緣膜。而且,於測定所得的絕緣膜的膜厚後,於潔淨烘箱內、240℃下進行1小時的追加烘烤等,依照與上述同樣的方法,進行所得的絕緣膜的耐熱性的評價。使用感放射線性樹脂組成物S-2而形成的絕緣膜的上述的膜厚變化率成為3%以下,可知具有良好的耐熱性。 Next, an insulating film was formed in the same manner as above except that the radiation-sensitive resin composition S-2 prepared in Example 2 was used, and the heating temperature in the clean oven was set to 180 °C. In addition, after the film thickness of the obtained insulating film was measured, it was subjected to additional baking in a clean oven at 240 ° C for 1 hour, and the heat resistance of the obtained insulating film was evaluated in the same manner as described above. The film thickness change rate of the insulating film formed using the radiation sensitive resin composition S-2 was 3% or less, and it was found that the heat resistance was excellent.
與上述耐光性的評價同樣地使用實例1中所調製的感放射線性樹脂組成物S-1,在矽基板上形成塗膜。將該矽基板在潔淨烘箱內、220℃下進行1小時的加熱,製成硬化膜而獲得絕緣膜。使用分光光度計(日立製作所公司製造的“150-20型雙光束”)測定波長400 nm下的透射率而進行評價。此時,在波長400 nm下的透射率不足90%的情況下,可判斷成透明性不良。在使用感放射線性樹脂組成物S-1而形成的絕緣膜中,波長400 nm下的透射率成為90%以上,可知透明性優異,具有良好的透射率特性。 The radiation-sensitive resin composition S-1 prepared in Example 1 was used in the same manner as the above evaluation of light resistance to form a coating film on the ruthenium substrate. The tantalum substrate was heated in a clean oven at 220 ° C for 1 hour to obtain a cured film to obtain an insulating film. The transmittance at a wavelength of 400 nm was measured using a spectrophotometer ("150-20 type double beam" manufactured by Hitachi, Ltd.) and evaluated. At this time, when the transmittance at a wavelength of 400 nm is less than 90%, it is judged that the transparency is poor. In the insulating film formed using the radiation sensitive resin composition S-1, the transmittance at a wavelength of 400 nm is 90% or more, and it is understood that the transparency is excellent and the transmittance characteristics are excellent.
其次,使用在實例2中所調製的感放射線性樹脂組成 物S-2,將在潔淨烘箱內所進行的加熱溫度設為180℃,除此以外依照與上述同樣的方法而形成絕緣膜。而且,依照與上述同樣的方法,進行所得的絕緣膜的耐熱性的評價。使用感放射線性樹脂組成物S-2而形成的絕緣膜的在波長400 nm下的透射率成為90%以上,可知透明性優異,具有良好的透射率特性。 Next, the composition of the radiation-sensitive resin prepared in Example 2 was used. In the object S-2, an insulating film was formed in the same manner as described above except that the heating temperature in the clean oven was 180 °C. Further, the heat resistance of the obtained insulating film was evaluated in the same manner as above. The transmittance of the insulating film formed using the radiation sensitive resin composition S-2 at a wavelength of 400 nm was 90% or more, and it was found that the insulating film was excellent in transparency and had excellent transmittance characteristics.
使用實例1中所調製的感放射線性樹脂組成物S-1,將其旋塗在表面形成有防止鈉離子溶出的SiO2膜,進一步將ITO電極蒸鍍為規定形狀的鈉玻璃基板上。其次,於90℃的潔淨烘箱內進行10分鐘的預烘,形成膜厚為2.0 μm的塗膜。 Using the radiation sensitive resin composition S-1 prepared in Example 1, it was spin-coated on the surface to form an SiO 2 film for preventing elution of sodium ions, and further, the ITO electrode was vapor-deposited on a soda glass substrate having a predetermined shape. Next, prebaking was performed in a clean oven at 90 ° C for 10 minutes to form a coating film having a film thickness of 2.0 μm.
其次,未介隔光掩模而以500 J/m2的曝光量對塗膜進行曝光。其後,於220℃下、潔淨烘箱內進行30分鐘的後烘,使塗膜硬化製成永久硬化膜而形成絕緣膜。 Next, the coating film was exposed at an exposure amount of 500 J/m 2 without interposing the photomask. Thereafter, post-baking was performed in a clean oven at 220 ° C for 30 minutes to cure the coating film to form a permanent cured film to form an insulating film.
其次,用混合有0.8 mm的玻璃珠的密封劑將該形成有像素的基板與僅僅將ITO電極蒸鍍為規定形狀的基板貼合後,注入默克公司製造的液晶MLC6608(商品名),製作液晶單元。 Then, the substrate on which the pixel was formed was bonded to a substrate on which only the ITO electrode was vapor-deposited into a predetermined shape, and then injected into a liquid crystal MLC6608 (trade name) manufactured by Merck. Liquid crystal cell.
其次,將液晶單元放入至60℃的恒溫層中,用液晶電壓保持率測定系統(東陽技術公司製造的“VHR-1A型”)而測定液晶單元的電壓保持率。此時的施加電壓為5.5 V的方形波,測定頻率為60 Hz。此處所謂電壓保持率是(16.7毫秒後的液晶單元電位差)/(於0毫秒時所施加的電壓)} 的值。若液晶單元的電壓保持率為90%以下,則表示液晶單元無法在16.7毫秒的時間內將施加電壓保持為規定的水準,無法充分地使液晶配向,而且產生液晶顯示元件的顯示不良的殘像等“燒痕”的可能性高。 Next, the liquid crystal cell was placed in a constant temperature layer at 60 ° C, and the voltage holding ratio of the liquid crystal cell was measured by a liquid crystal voltage retention ratio measurement system ("VHR-1A type" manufactured by Toyo Corporation). The applied voltage at this time was a square wave of 5.5 V, and the measurement frequency was 60 Hz. Here, the voltage holding ratio is (the potential difference of the liquid crystal cell after 16.7 milliseconds) / (the voltage applied at 0 milliseconds)} Value. When the voltage holding ratio of the liquid crystal cell is 90% or less, it means that the liquid crystal cell cannot maintain the applied voltage at a predetermined level within 16.7 milliseconds, and the liquid crystal cannot be sufficiently aligned, and the afterimage of the liquid crystal display element is defective. The possibility of "burn marks" is high.
具有使用感放射線性樹脂組成物S-1而形成的絕緣膜的液晶單元的電壓保持率超過90%,可知具有良好的電壓保持率特性。 The liquid crystal cell having the insulating film formed using the radiation sensitive resin composition S-1 has a voltage holding ratio of more than 90%, and it is known that it has excellent voltage holding ratio characteristics.
其次,使用實例2中所調製的感放射線性樹脂組成物S-2,將在潔淨烘箱內所進行的後烘的溫度設為180℃,除此以外依照與上述同樣的方法而形成絕緣膜,製作形成有該絕緣膜的液晶單元而進行電壓保持率的評價。具有使用感放射線性樹脂組成物S-2而形成的絕緣膜的液晶單元的電壓保持率超過90%,可知具有良好的電壓保持率特性。 Next, using the radiation sensitive resin composition S-2 prepared in Example 2, the temperature of the post-baking performed in the clean oven was set to 180 ° C, and an insulating film was formed in the same manner as described above. The liquid crystal cell in which the insulating film was formed was produced to evaluate the voltage holding ratio. The liquid crystal cell having the insulating film formed using the radiation sensitive resin composition S-2 has a voltage holding ratio of more than 90%, and it is known that it has excellent voltage holding ratio characteristics.
根據以上的評價結果可知:實例1的感放射線性樹脂組成物S-1及實例2的感放射線性樹脂組成物S-2均具有優異的放射線感光度。而且可知:使用實例1的感放射線性樹脂組成物S-1及實例2的感放射線性樹脂組成物S-2而形成的絕緣膜均耐光性、耐熱性及透明性優異,且可構成電壓保持率特性良好的液晶單元。 According to the above evaluation results, it is understood that the radiation sensitive resin composition S-1 of Example 1 and the radiation sensitive resin composition S-2 of Example 2 have excellent radiation sensitivity. Further, it is understood that the insulating film formed by using the radiation sensitive resin composition S-1 of Example 1 and the radiation sensitive resin composition S-2 of Example 2 is excellent in light resistance, heat resistance, and transparency, and can constitute a voltage retention. A liquid crystal cell with good characteristics.
使用由實例1而所得的感放射線性樹脂組成物S-1,使用旋轉器將其塗布於形成有開關主動元件或電極等的基板上。於該基板上形成有開關主動元件、源極、汲極、閘 極、源配線、及閘配線等。這些開關主動元件等是在基板上反復進行通常的半導體膜的成膜、公知的絕緣層形成、藉由光刻法的蝕刻等藉由公知的方法所形成的元件。 The radiation sensitive resin composition S-1 obtained in Example 1 was applied onto a substrate on which a switching active element or an electrode or the like was formed using a spinner. A switching active component, a source, a drain, and a gate are formed on the substrate Pole, source wiring, and gate wiring. These switching active elements and the like are elements formed by a conventional method in which a normal semiconductor film is formed on a substrate, a known insulating layer is formed, and etching by photolithography is performed.
其次,在90℃的潔淨烘箱內進行10分鐘的預烘而形成塗膜。其次,使用曝光機(高壓水銀燈),介隔具有接觸孔圖案等所期望的圖案的光掩模,將曝光量設為500 J/m2而對所得的塗膜進行放射線照射。其後,使用0.40質量%的四甲基氫氧化銨水溶液而於25℃下用覆液法進行顯影後,進行1分鐘的純水清洗。藉由進行顯影而除去不需要的部分,形成形成有接觸孔的規定形狀的塗膜。進一步於烘箱中、220℃下進行1小時的後烘處理而使其硬化,形成膜厚為3.0 μm的絕緣膜。 Next, pre-baking was performed in a clean oven at 90 ° C for 10 minutes to form a coating film. Next, using a exposure machine (high-pressure mercury lamp), a photomask having a desired pattern such as a contact hole pattern was interposed, and the obtained coating film was irradiated with radiation by setting the exposure amount to 500 J/m 2 . Thereafter, development was carried out by a coating method at 25° C. using a 0.40% by mass aqueous solution of tetramethylammonium hydroxide, followed by washing with pure water for 1 minute. An unnecessary portion is removed by development, and a coating film having a predetermined shape in which a contact hole is formed is formed. Further, it was post-baked in an oven at 220 ° C for 1 hour to be hardened to form an insulating film having a film thickness of 3.0 μm.
其次,對於形成有絕緣膜的基板,使用濺鍍法而於絕緣膜上形成包含ITO的透明導電層。其次,藉由光刻法而對透明導電層進行蝕刻,於絕緣膜上形成透明電極。 Next, a transparent conductive layer containing ITO was formed on the insulating film by a sputtering method on the substrate on which the insulating film was formed. Next, the transparent conductive layer is etched by photolithography to form a transparent electrode on the insulating film.
如上所述地進行而製造本實例的陣列基板。於所得的本實例的陣列基板中,於絕緣膜的所期望的位置形成所期望的尺寸的接觸孔,實現透明電極與汲極的電性連接。 The array substrate of the present example was fabricated as described above. In the obtained array substrate of the present example, a contact hole of a desired size is formed at a desired position of the insulating film, and electrical connection between the transparent electrode and the drain is realized.
使用實例2中所調製的感放射線性樹脂組成物S-2,將烘箱中所進行的後烘處理的溫度設為180℃,除此以外依照與實例4同樣的方法而在基板上形成絕緣膜,形成透明電極而進行陣列基板的製造。於所得的本實例的陣列基板中,在絕緣膜的所期望的位置形成有所期望的尺寸的接 觸孔,實現作為像素電極的透明電極與汲極之間的電性連接。 An insulating film was formed on the substrate in the same manner as in Example 4 except that the temperature of the post-baking treatment performed in the oven was set to 180 ° C using the radiation-sensitive resin composition S-2 prepared in Example 2. The transparent electrode is formed to fabricate the array substrate. In the obtained array substrate of the present example, a desired size is formed at a desired position of the insulating film. The contact hole realizes an electrical connection between the transparent electrode and the drain electrode as the pixel electrode.
在本實例中,使用實例4中所得的陣列基板,使用包含具有光配向性基的感放射線性聚合物的液晶配向劑而形成光配向膜。 In the present example, using the array substrate obtained in Example 4, a photo-alignment film was formed using a liquid crystal alignment agent containing a radiation-sensitive polymer having a photo-alignment group.
首先,在實例4的陣列基板的透明電極上,藉由旋轉器而塗布作為包含具有光配向性基的感放射線性聚合物的液晶配向劑的國際公開(WO)2009/025386號說明書的實例6中所記載的液晶配向劑A-1。其次,在80℃的熱板上進行1分鐘的預烘後,在對內部進行了氮氣置換的烘箱中、180℃下進行1小時的加熱而形成膜厚為80 nm的塗膜。其次,使用Hg-Xe燈及格蘭-泰勒棱鏡,自相對於垂直於基板表面的方向而言傾斜40°的方向,對該塗膜表面照射200 J/m2的包含313 nm的明線的偏光紫外線,製造具有光配向膜的陣列基板。 First, on the transparent electrode of the array substrate of Example 4, Example 6 of the specification of International Publication (WO) 2009/025386, which is a liquid crystal alignment agent containing a radiation-sensitive polymer having a photo-alignment group, was coated by a rotator. The liquid crystal alignment agent A-1 described in the above. Next, after prebaking for 1 minute on a hot plate at 80 ° C, it was heated in an oven which was internally purged with nitrogen at 180 ° C for 1 hour to form a coating film having a film thickness of 80 nm. Next, using Hg-Xe lamp and a Glan - Taylor prism, autocorrelation vertical direction is inclined 40 ° in terms of the direction of the surface of the substrate, / m 2 comprising a bright line of 313 nm of the polarized light irradiating the surface of the coating film 200 J Ultraviolet rays are used to manufacture an array substrate having a photo-alignment film.
在本實例中,使用實例5中所得的陣列基板,與實例6同樣地使用包含具有光配向性基的感放射線性聚合物的液晶配向劑而形成光配向膜,製造具有光配向膜的陣列基板。 In the present example, using the array substrate obtained in Example 5, a liquid alignment film containing a radiation-sensitive polymer having a photo-alignment group was used in the same manner as in Example 6 to form a photo-alignment film, and an array substrate having a photo-alignment film was produced. .
在本實例中,使用實例4中所得的陣列基板,使用包含不具光配向性基的聚醯亞胺的液晶配向劑而形成垂直配向膜。 In the present example, using the array substrate obtained in Example 4, a vertical alignment film was formed using a liquid crystal alignment agent containing a polyimide having no photo-alignment group.
首先,在實例4的陣列基板的透明電極上,藉由旋轉器而塗布作為包含不具光配向性基的聚醯亞胺的液晶配向劑的垂直配向膜形成用AL60101(JSR Corporation製造)。其次,在80℃的熱板上進行1分鐘的預焙後,在對內部進行了氮氣置換的烘箱中、180℃下進行1小時的加熱而形成膜厚為80 nm的塗膜,製造具有垂直配向膜的陣列基板。 First, on the transparent electrode of the array substrate of Example 4, AL60101 (manufactured by JSR Corporation) for vertical alignment film formation as a liquid crystal alignment agent containing a polyimide having no photo-alignment group was applied by a spinner. Next, after prebaking on a hot plate at 80 ° C for 1 minute, the film was heated at 180 ° C for 1 hour in an oven which was internally purged with nitrogen to form a coating film having a film thickness of 80 nm, and was manufactured to have a vertical shape. An array substrate of an alignment film.
在本實例中,使用實例5中所得的陣列基板,與實例8同樣地使用包含不具光配向性基的聚醯亞胺的液晶配向劑而形成垂直配向膜,製造具有垂直配向膜的陣列基板。 In the present example, using the array substrate obtained in Example 5, a liquid crystal alignment agent containing a polyimide having no photo-alignment group was used to form a vertical alignment film in the same manner as in Example 8, and an array substrate having a vertical alignment film was produced.
使用實例7中所得的陣列基板。而且,準備藉由公知的方法而製造的彩色濾光片基板。該彩色濾光片基板在透明基板上將紅色、綠色及藍色這3色的微小的著色圖案與黑色矩陣配置為格子狀,於著色圖案上配置有透明的公共電極。而且,於彩色濾光片基板的公共電極上形成與在實例6中的形成在陣列基板上者相同的光配向膜,製成形成有配向膜的對向基板。使用這些一對基板,用密封劑加以 貼合後,注入TN液晶而於基板間夾持液晶層,製造彩色液晶顯示元件。本實例的液晶顯示元件具有與上述圖3所示的液晶顯示元件同樣的結構。本實例的液晶顯示元件顯示出優異的運行特性與顯示特性與可靠性。 The array substrate obtained in Example 7 was used. Further, a color filter substrate manufactured by a known method is prepared. In the color filter substrate, a minute color pattern of three colors of red, green, and blue and a black matrix are arranged in a lattice shape on a transparent substrate, and a transparent common electrode is disposed on the coloring pattern. Further, a light alignment film which is the same as that formed on the array substrate in Example 6 was formed on the common electrode of the color filter substrate to form an opposite substrate on which the alignment film was formed. Use these pair of substrates and use a sealant After bonding, a TN liquid crystal was injected to sandwich a liquid crystal layer between the substrates to produce a color liquid crystal display element. The liquid crystal display element of this example has the same structure as the liquid crystal display element shown in Fig. 3 described above. The liquid crystal display element of this example exhibited excellent operational characteristics and display characteristics and reliability.
另外,本發明並不限定於上述各實施形態,可以在不偏離本發明的主旨的範圍內進行各種變形而實施。 The present invention is not limited to the embodiments described above, and various modifications can be made without departing from the spirit and scope of the invention.
本發明的陣列基板可藉由在比先前技術低的溫度下的加熱步驟而製造,且具有高的可靠性。因此,本發明的陣列基板可適宜地使用於要求優異的顯示品質與可靠性的大型液晶電視用途等中。 The array substrate of the present invention can be manufactured by a heating step at a lower temperature than the prior art, and has high reliability. Therefore, the array substrate of the present invention can be suitably used in a large-sized liquid crystal television application or the like which requires excellent display quality and reliability.
1‧‧‧陣列基板 1‧‧‧Array substrate
4、11‧‧‧基板 4, 11‧‧‧ substrate
5‧‧‧源極 5‧‧‧ source
6‧‧‧汲極 6‧‧‧汲polar
7‧‧‧閘極 7‧‧‧ gate
8‧‧‧開關主動元件 8‧‧‧Switching active components
9‧‧‧透明電極 9‧‧‧Transparent electrode
10‧‧‧配向膜 10‧‧‧Alignment film
12‧‧‧絕緣膜 12‧‧‧Insulation film
13‧‧‧黑色矩陣 13‧‧‧Black matrix
14‧‧‧公共電極 14‧‧‧Common electrode
15‧‧‧著色圖案 15‧‧‧Coloring pattern
17‧‧‧接觸孔 17‧‧‧Contact hole
18‧‧‧源配線 18‧‧‧Source wiring
19‧‧‧閘配線 19‧‧ ‧ gate wiring
21‧‧‧液晶顯示元件 21‧‧‧Liquid display components
22‧‧‧彩色濾光片基板 22‧‧‧Color filter substrate
23‧‧‧液晶層 23‧‧‧Liquid layer
27‧‧‧背光源光 27‧‧‧Backlight light
28‧‧‧偏光板 28‧‧‧Polar plate
圖1是表示本實施形態的陣列基板的主要部分結構的模式剖面圖。 Fig. 1 is a schematic cross-sectional view showing a configuration of a main part of an array substrate of the embodiment.
圖2是本實施形態的陣列基板的模式性電極配線圖。 Fig. 2 is a schematic electrode wiring diagram of the array substrate of the embodiment.
圖3是本實施形態的液晶顯示元件的模式剖面圖。 Fig. 3 is a schematic cross-sectional view showing a liquid crystal display element of the embodiment.
1‧‧‧陣列基板 1‧‧‧Array substrate
4‧‧‧基板 4‧‧‧Substrate
5‧‧‧源極 5‧‧‧ source
6‧‧‧汲極 6‧‧‧汲polar
7‧‧‧閘極 7‧‧‧ gate
8‧‧‧開關主動元件 8‧‧‧Switching active components
9‧‧‧透明電極 9‧‧‧Transparent electrode
10‧‧‧配向膜 10‧‧‧Alignment film
12‧‧‧絕緣膜 12‧‧‧Insulation film
17‧‧‧接觸孔 17‧‧‧Contact hole
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