CN104820229A - High-quantum-efficiency detector operation circuit for aiming at X-ray spectral band - Google Patents
High-quantum-efficiency detector operation circuit for aiming at X-ray spectral band Download PDFInfo
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- CN104820229A CN104820229A CN201510178444.9A CN201510178444A CN104820229A CN 104820229 A CN104820229 A CN 104820229A CN 201510178444 A CN201510178444 A CN 201510178444A CN 104820229 A CN104820229 A CN 104820229A
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- detector
- resistance
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- quantum efficiency
- ray spectral
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Abstract
The invention provides a high-quantum-efficiency detector operation circuit for aiming at an X-ray spectral band. The high-quantum-efficiency detector operation circuit is controlled through an offset voltage of a voltage adjusting circuit to a detector, so that the detector operates in an avalanche amplification state. The amplification factor of the detector can be enlarged and the sensitivity can be improved, thereby realizing detector for a weak X ray. The high-quantum-efficiency detector operation circuit performs energy amplification on electrons which are output from the detector through a field effect transistor and a charge sensitive preamplifier, and has advantages of small coupling capacitor, high sensitivity and high signal-to-noise ratio. According to the high-quantum-efficiency detector operation circuit, the output end of the detector is further connected with a current limiting resistor, thereby realizing switching the detector between an avalanche state and a vanishing state, and finishing pulse response to a single electron. Furthermore the resistor limits the maximal current in operation of the detector, thereby realizing protection to the detector. Additionally the high-quantum-efficiency detector operation circuit is provided with a decoupling capacitor, and can perform the functions of reducing noise of a current input end and improving the signal-to-noise ratio of a detecting system.
Description
Technical field
The present invention relates to X-ray detection technical field, particularly one is for grenz ray spectral coverage high-quantum efficiency detector operating circuit, can be widely used in faint X-ray detection.
Background technology
In deep-space detection field, the X ray that neutron star sends, can as navigational reference as a stable benchmark.Because the spectral energy after arriving near-earth orbit only has single photon magnitude, so the X-ray detection means of routine cannot realize the detectivity of this magnitude.Another solution carries out optical amplifier in front end, namely increases image intensifier, convert high energy X particle to multiple light photon, carries out reception amplify with electron multiplication CCD.The shortcoming of this system is that front end optical system is complicated, and volume is comparatively large, and cannot realize small light, system is through multiple conversions in addition, and noise is comparatively large, and system delay is larger.
Summary of the invention
The object of the invention is to overcome the deficiencies in the prior art, provide a kind of for grenz ray spectral coverage high-quantum efficiency detector operating circuit, this circuit can realize the detection of single photon X ray.
Above-mentioned purpose of the present invention is realized by following scheme:
A kind of for grenz ray spectral coverage high-quantum efficiency detector operating circuit, comprise detector (211), resistance R
1, electric capacity C
1, voltage regulator circuit and sensing circuit; Wherein: the output terminal of detector (211) respectively with resistance R
1be connected with sensing circuit, resistance R
1the other end connect voltage regulator circuit, and the other end of voltage regulator circuit connect external voltage source; Electric capacity C
1one end be connected to resistance R
1and between voltage regulator circuit, electric capacity C
1other end ground connection; Wherein, voltage regulator circuit regulates the voltage that external voltage source is applied on detector (211), and sensing circuit exports electronics to detector (211) and carries out amplification output.
Above-mentioned in grenz ray spectral coverage high-quantum efficiency detector operating circuit, voltage regulator circuit comprises resistance R
2with rheostat (241), wherein: resistance R
2a terminating resistor R
1, another termination rheostat (241); The other two ends of rheostat (241) connect external voltage source and ground connection respectively.
Above-mentioned in grenz ray spectral coverage high-quantum efficiency detector operating circuit, sensing circuit comprises electric capacity C
2, field effect transistor (221), charge-sensitive preamplifier (231) and signal output part (201), wherein: electric capacity C
2the output terminal of a termination detector (211), the other end connects the grid of field effect transistor (221); The source ground of field effect transistor (221), the drain electrode of field effect transistor (221) connects the input end of charge-sensitive preamplifier (231); The output termination signal output part (201) of charge-sensitive preamplifier (231).
Above-mentioned in grenz ray spectral coverage high-quantum efficiency detector operating circuit, the end effect transistor that field effect transistor (221) is N groove structure.
Above-mentioned in grenz ray spectral coverage high-quantum efficiency detector operating circuit, voltage regulator circuit regulates the voltage that external voltage source is applied on detector (211), the bias voltage that detector (211) is provided by external voltage source controls, and work in the avalanche condition of critical self-excitation, namely make the bias voltage of detector (211) lower than self-excitation voltage 5 ~ 10V.
Above-mentioned in grenz ray spectral coverage high-quantum efficiency detector operating circuit, resistance R
1standard resistance range be 50M Ω ~ 200M Ω.
Above-mentioned in grenz ray spectral coverage high-quantum efficiency detector operating circuit, electric capacity C
1capacitance value range be 10nF ~ 1000nF.
Above-mentioned in grenz ray spectral coverage high-quantum efficiency detector operating circuit, electric capacity C
2capacitance value range be 3.75nF ~ 100nF.
Above-mentioned in grenz ray spectral coverage high-quantum efficiency detector operating circuit, resistance R
2resistance be 1M Ω; The maximum maximum value of rheostat (241) is 2M ohm, and power is greater than 0.05W.
The present invention compared with prior art, has the following advantages:
(1), the present invention controlled by the bias voltage of voltage regulator circuit to detector, makes detector work in critical snowslide magnifying state, can increase the enlargement factor of detector, improves sensitivity, thus realizes faint X-ray detection;
(2), the present invention adopts field effect transistor and charge-sensitive preamplifier to export electronics to detector to carry out energy amplification, have the advantages that coupling capacitance is little, highly sensitive, signal to noise ratio (S/N ratio) is high in sensing circuit;
(3), the present invention connects current-limiting resistance R at detector output terminal
1, realize detector and switch in the snowslide-state that dies out, thus complete the impulse response to single photon, maximum current when this resistance works to detector simultaneously limits, thus realizes the protection to detector;
(4), the present invention adopts electric capacity C
1carry out uncoupling, the noise of circuit input end can be reduced, improve the signal to noise ratio (S/N ratio) of detection system.
Accompanying drawing explanation
Fig. 1 is of the present invention for grenz ray spectral coverage high-quantum efficiency detector operating circuit schematic diagram.
Embodiment
Below in conjunction with the drawings and specific embodiments, the present invention is described in further detail:
Circuit diagram as shown in Figure 1, provided by the inventionly comprises for grenz ray spectral coverage high-quantum efficiency detector operating circuit: detector 211, resistance R
1, electric capacity C
1, resistance R
2, rheostat 241, electric capacity C
2, field effect transistor 221, charge-sensitive preamplifier 231 and signal output part 201, wherein: the output terminal of detector 211 respectively with resistance R
1with electric capacity C
2connect, resistance R
1other end contact resistance R
2, resistance R
2another termination rheostat 241, the other two ends of rheostat 241 connect external voltage source and ground connection respectively.Electric capacity C
2the other end connect the grid of field effect transistor 221; The source ground of field effect transistor 221, the drain electrode of field effect transistor 221 connects the input end of charge-sensitive preamplifier 231; The output termination signal output part 201 of charge-sensitive preamplifier 231.Electric capacity C
1one end be connected to resistance R
1with resistance R
2between, other end ground connection.
In the present invention, adopt SI-APD as detector 211, utilize resistance R
2, the bias voltage of voltage regulator circuit to detector 211 that form of rheostat 241 control, namely adjust the resistance of rheostat 241 and make detector 211 work in the avalanche condition of critical self-excitation, thus increase the enlargement factor of detector 211.In the present embodiment, R is chosen
2select 1M ohm, 2M ohm selected by rheostat 241, and power is greater than 0.05W.If the voltage breakdown of the detector SI-APD adopted is 200V, it is safe clearance that rheostat 241 both end voltage can be selected to be 190V, 10V.Standardsizing rheostat 241 output terminal resistance changes from small to big, the bias voltage of test probe 211 output terminal simultaneously, detector output saturation when not inputting when a certain resistance, detector 211 bias voltage is now self-excitation voltage, this self-excitation voltage is determined by detector 211 self character, different this magnitude of voltage of detector is different, need test separately.Adjusting resistance makes the bias voltage of detector own lower than self-excitation voltage 5 ~ 10V, then make detector be operated in the avalanche condition of critical self-excitation, and now enlargement factor is the maximum amplification of detector.
In the present invention, by the output of detector through electric capacity C
2electron energy amplification is carried out by field effect transistor 221 and charge-sensitive preamplifier 231 after straight.Wherein, field effect transistor 221 selects the end effect transistor of N groove structure, and this field effect transistor has high sensitivity, low noise, pole low leakage characteristic, can amplify Weak current signal.Wherein, capacitance C
2choose and determined by detector bias voltage, if detector is chosen as SI-APD, then according to the characteristic of SI-APD, by electric capacity C
2capacitance be chosen for 3.75nF ~ 100nF.And the field effect transistor 221 selected in the present invention and charge-sensitive preamplifier 231 should make its input end equivalent noise be less than the equivalent inpnt needing detecting x-ray.In the present embodiment, if the enlargement factor of detector is 100, and the minimum input energy of X ray is 0.5KeV, then the electron number N=n η E of detector output
x-ray/ 3.3eV=9090; Wherein, n is detector enlargement factor and n=100; η is quantum efficiency and setting η=60%; E
x-rayfor X ray spectral energy.
Known according to above calculating, the field effect transistor 221 chosen in the present invention and charge-sensitive preamplifier 231, should make equivalent noise input be less than 9120 electronics, and choose capacitance C
2capacitance be 10nF, and withstand voltage is greater than 200V.
Adopt resistance R in the present invention
1limit as the working current of current-limiting resistance to detector 211, require this current-limiting resistance R
1withstand voltage be greater than rheostat both end voltage, this current-limiting resistance R
1resistance determine according to system response time, X ray ceiling capacity and detector enlargement factor.In the present embodiment, if X ray ceiling capacity is 10KeV, then the electron number that detector exports is 1.82 × 10
5individual, R
1system response time is 20ns, then can calculate electric current I=1.46 × 10
-7ampere; If the voltage breakdown of detector is 200V, then current-limiting resistance R
1resistance be 137 ohm.
In the present invention, also electric capacity C is adopted
1as decoupling capacitor, this electric capacity can filtering circuit noise, thus improves detector signal to noise ratio (S/N ratio), and the capacitance value range of this electric capacity is 10nF ~ 1000nF, is generally chosen for 100nF.
The above; be only the present invention's embodiment, but protection scope of the present invention is not limited thereto, is anyly familiar with those skilled in the art in the technical scope that the present invention discloses; the change that can expect easily or replacement, all should be encompassed within protection scope of the present invention.
The content be not described in detail in instructions of the present invention belongs to the known technology of professional and technical personnel in the field.
Claims (9)
1., for a grenz ray spectral coverage high-quantum efficiency detector operating circuit, it is characterized in that: comprise detector (211), resistance R
1, electric capacity C
1, voltage regulator circuit and sensing circuit; Wherein: the output terminal of detector (211) respectively with resistance R
1be connected with sensing circuit, resistance R
1the other end connect voltage regulator circuit, and the other end of voltage regulator circuit connect external voltage source; Electric capacity C
1one end be connected to resistance R
1and between voltage regulator circuit, electric capacity C
1other end ground connection; Wherein, voltage regulator circuit regulates the voltage that external voltage source is applied on detector (211), and sensing circuit exports electronics to detector (211) and carries out amplification output.
2. one according to claim 1 is for grenz ray spectral coverage high-quantum efficiency detector operating circuit, it is characterized in that: voltage regulator circuit comprises resistance R
2with rheostat (241), wherein: resistance R
2a terminating resistor R
1, another termination rheostat (241); The other two ends of rheostat (241) connect external voltage source and ground connection respectively.
3. one according to claim 1 is for grenz ray spectral coverage high-quantum efficiency detector operating circuit, it is characterized in that: sensing circuit comprises electric capacity C
2, field effect transistor (221), charge-sensitive preamplifier (231) and signal output part (201), wherein: electric capacity C
2the output terminal of a termination detector (211), the other end connects the grid of field effect transistor (221); The source ground of field effect transistor (221), the drain electrode of field effect transistor (221) connects the input end of charge-sensitive preamplifier (231); The output termination signal output part (201) of charge-sensitive preamplifier (231).
4. one according to claim 3 is for grenz ray spectral coverage high-quantum efficiency detector operating circuit, it is characterized in that: the end effect transistor that field effect transistor (221) is N groove structure.
5. one according to claim 1 is for grenz ray spectral coverage high-quantum efficiency detector operating circuit, it is characterized in that: voltage regulator circuit regulates the voltage that external voltage source is applied on detector (211), the bias voltage that detector (211) is provided by external voltage source controls, and work in the avalanche condition of critical self-excitation, namely make the bias voltage of detector (211) lower than self-excitation voltage 5 ~ 10V.
6. one according to claim 1 is for grenz ray spectral coverage high-quantum efficiency detector operating circuit, it is characterized in that: resistance R
1standard resistance range be 50M Ω ~ 200M Ω.
7. one according to claim 1 is for grenz ray spectral coverage high-quantum efficiency detector operating circuit, it is characterized in that: electric capacity C
1capacitance value range be 10nF ~ 1000nF.
8. one according to claim 3 is for grenz ray spectral coverage high-quantum efficiency detector operating circuit, it is characterized in that: electric capacity C
2capacitance value range be 3.75nF ~ 100nF.
9. one according to claim 2 is for grenz ray spectral coverage high-quantum efficiency detector operating circuit, it is characterized in that: resistance R
2resistance be 1M Ω; The maximum maximum value of rheostat (241) is 2M ohm, and power is greater than 0.05W.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510178444.9A CN104820229A (en) | 2015-04-15 | 2015-04-15 | High-quantum-efficiency detector operation circuit for aiming at X-ray spectral band |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510178444.9A CN104820229A (en) | 2015-04-15 | 2015-04-15 | High-quantum-efficiency detector operation circuit for aiming at X-ray spectral band |
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| CN104820229A true CN104820229A (en) | 2015-08-05 |
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ID=53730570
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| CN201510178444.9A Pending CN104820229A (en) | 2015-04-15 | 2015-04-15 | High-quantum-efficiency detector operation circuit for aiming at X-ray spectral band |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111865225A (en) * | 2020-07-28 | 2020-10-30 | 哈尔滨工业大学 | Weak pulse signal amplifying circuit and micro-dust detector |
| CN114924302A (en) * | 2022-05-17 | 2022-08-19 | 吉林大学 | X-ray detection device based on perovskite material |
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| JPH01114779A (en) * | 1987-09-18 | 1989-05-08 | Commiss Energ Atom | Noise for detecting pure signal in discrete signal containing noise measured and noise change suppression system |
| CN2695987Y (en) * | 2003-12-27 | 2005-04-27 | 中国科学院近代物理研究所 | Low noise electric charge sensitive preamplifier |
| CN101266170A (en) * | 2008-04-24 | 2008-09-17 | 蚌埠市普乐新能源有限公司 | Method and apparatus for measuring multi-junction photovoltaic battery quantum efficiency |
| CN103115688A (en) * | 2013-01-24 | 2013-05-22 | 南京大学 | Gigahertz sine gating near-infrared single photon detector with tunable frequency |
| CN203276080U (en) * | 2013-01-31 | 2013-11-06 | 安徽问天量子科技股份有限公司 | Single-proton detector bias voltage generating circuit based on avalanche photodiode |
-
2015
- 2015-04-15 CN CN201510178444.9A patent/CN104820229A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01114779A (en) * | 1987-09-18 | 1989-05-08 | Commiss Energ Atom | Noise for detecting pure signal in discrete signal containing noise measured and noise change suppression system |
| CN2695987Y (en) * | 2003-12-27 | 2005-04-27 | 中国科学院近代物理研究所 | Low noise electric charge sensitive preamplifier |
| CN101266170A (en) * | 2008-04-24 | 2008-09-17 | 蚌埠市普乐新能源有限公司 | Method and apparatus for measuring multi-junction photovoltaic battery quantum efficiency |
| CN103115688A (en) * | 2013-01-24 | 2013-05-22 | 南京大学 | Gigahertz sine gating near-infrared single photon detector with tunable frequency |
| CN203276080U (en) * | 2013-01-31 | 2013-11-06 | 安徽问天量子科技股份有限公司 | Single-proton detector bias voltage generating circuit based on avalanche photodiode |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111865225A (en) * | 2020-07-28 | 2020-10-30 | 哈尔滨工业大学 | Weak pulse signal amplifying circuit and micro-dust detector |
| CN111865225B (en) * | 2020-07-28 | 2023-10-20 | 哈尔滨工业大学 | Weak pulse signal amplifying circuit and tiny dust detector |
| CN114924302A (en) * | 2022-05-17 | 2022-08-19 | 吉林大学 | X-ray detection device based on perovskite material |
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Application publication date: 20150805 |
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