CN104810456A - LED packaging module group - Google Patents

LED packaging module group Download PDF

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Publication number
CN104810456A
CN104810456A CN201410044078.3A CN201410044078A CN104810456A CN 104810456 A CN104810456 A CN 104810456A CN 201410044078 A CN201410044078 A CN 201410044078A CN 104810456 A CN104810456 A CN 104810456A
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CN
China
Prior art keywords
electrically
backing plate
led
conductive backing
crystal grain
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201410044078.3A
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Chinese (zh)
Inventor
林柏廷
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YASHIDA SCIENCE TECHNOLOGY Co Ltd
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YASHIDA SCIENCE TECHNOLOGY Co Ltd
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Priority to CN201410044078.3A priority Critical patent/CN104810456A/en
Publication of CN104810456A publication Critical patent/CN104810456A/en
Pending legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58Optical field-shaping elements
    • H01L33/60Reflective elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/64Heat extraction or cooling elements
    • H01L33/641Heat extraction or cooling elements characterized by the materials

Abstract

An LED packaging module group comprises at least one LED unit. The LED unit comprises a packaging substrate, an LED crystal grain, an insulating rubber body and at least one lead. The packaging pedestal includes a conductive substrate with a through hole, an insulating layer which at least covers part of the bottom surface of the conductive substrate, and a conductive layer which at least covers the bottom surface without the insulating layer of the conductive substrate. The LED crystal grain successively comprises a lower electrode, a crystal grain substrate, a semiconductor light emission structure and an upper electrode from bottom to top, wherein the crystal grain substrate with low reflectivity is accommodated in the through hole of the conductive substrate, and the semiconductor light emission structure is exposed out of the top surface of the conductive substrate. The insulating rubber body is arranged in the through hole of the conductive substrate, and surrounds the crystal grain substrate. The two ends of the lead are connected with the upper electrode of the LED crystal grain and the conductive substrate respectively.

Description

LED package module
Technical field
The invention relates to a kind of LED package module, refer to that one is applicable to the LED package module of vertical LED crystal grain (vertical LED die) especially.
Background technology
Consulting Fig. 1, is an existing package structure for LED 9, and this package structure for LED 9 comprises circuit board 91, vertical LED crystal grain 92, at least one routing 93 and a packing colloid 94.
Circuit board 91 comprise an insulation plate body 911 (being such as ceramic substrate), a positive pole interconnect 912, be arranged in plate body 911 is arranged at plate body 911 bottom surface and the negative pole interconnect 914 and that the positive wire 913, being connected to positive pole interconnect 912 is arranged in plate body 911 is arranged at plate body 911 bottom surface and is connected to the cathode conductor 915 of negative pole interconnect 914.
Vertical LED crystal grain 92 is arranged on circuit board 91, and it from bottom to top comprises positive electrode 921, substrate 922, semiconductor luminescent layer 923 and a negative electrode 924 respectively.Vertical LED crystal grain 92 is arranged in positive pole interconnect 912 by the medium such as conducting resinl, scolding tin, makes the positive pole interconnect 912 of its positive electrode 921 and below, positive wire 913 forms and electrically conduct; The negative electrode 924 being positioned at its end face is then by routing 93, is formed electrically conduct with negative pole interconnect 914, cathode conductor 915.
Although this kind of existing package structure for LED 9 can apply to various illumination, but still there is part weak point.First, when the material that the substrate 922 of vertical LED crystal grain 92 adopts light reflective poor makes (as silicon substrate), the light that semiconductor light emitting layer 923 sends irradiates after substrate 922 (light L1) via structure reflects such as plate body 911, negative pole interconnect 914, packing colloids 94, the low reflectivity of substrate 922 can cause the light intensity decays of reflection ray L2, and affects the overall brightness of package structure for LED 9.
In addition, concerning the plate body 911 of insulation being such as ceramic material, its light reflective is not good, and the luminous intensity therefore through the light L1 of its reflection can decay to some extent, and affects the brightness of package structure for LED 9.And the heat conductivity of ceramic material is not good, vertical LED crystal grain 92 is arranged the radiating effect that it can affect vertical LED crystal grain 92, vertical LED crystal grain 92 is made easily to cause light decay because of heat localization.
Moreover, this kind of package structure for LED 9 is the positive electrode 921 and the negative electrode 924 that are connected to vertical LED crystal grain 92 by the positive and negative electrode circuit on circuit board 91, therefore specific positive and negative electrode circuit must be configured on circuit board 91, this structural allocation can cause the structure of circuit board 91 and fabrication steps complicated, and be unfavorable for manufacture and subsequent applications.
And on the other hand, this existing encapsulating structure is surface vertical LED crystal grain 92 being directly arranged at circuit board 91, therefore the thickness of package structure for LED 9 is circuit board 91, vertical LED crystal grain 92 and this three of packing colloid 94 superposition, and this configuration mode is unfavorable for the slimming development of package structure for LED 9.In addition, owing to circuit board 91 must configure more complicated positive and negative electrode circuit, the increase of its area may be caused, and be unfavorable for the miniaturized design of package structure for LED 9.
Summary of the invention
The object of the present invention is to provide one can promote luminosity, radiating effect, and reach the LED package module of size microminiaturization and designs simplification.
LED package module of the present invention, comprises at least one light emitting diode, and this light emitting diode comprises an encapsulation base, a LED crystal particle, insulation colloid and at least one wire.Encapsulation base, has: an electrically-conductive backing plate, has a contrary end face and a bottom surface, and forms the through hole that runs through its end face and bottom surface; One insulating barrier, tool electrical insulating property, and the portion bottom surface covering this electrically-conductive backing plate; One conductive layer, at least covers the portion bottom surface that this electrically-conductive backing plate does not arrange this insulating barrier.LED crystal particle, is partly arranged in the through hole of this electrically-conductive backing plate, and has: a bottom electrode, has conductivity; One crystal grain substrate, have conductivity and low reflective, it is arranged on this bottom electrode, and is contained in the through hole of this electrically-conductive backing plate; Semiconductor ray structure, is arranged on this crystal grain substrate, and outside the end face being revealed in this electrically-conductive backing plate, emits beam after reception electric power; And a top electrode, be arranged on this semiconductor light emitting structure, and there is conductivity.Insulation colloid is arranged in the through hole of this electrically-conductive backing plate, and to the crystal grain substrate of this LED crystal particle of major general around interior.The two ends of wire are connected to top electrode and this electrically-conductive backing plate of this LED crystal particle.
Preferably, the bottom electrode of this LED crystal particle is revealed in outside the bottom surface of this electrically-conductive backing plate.
Preferably, this conductive layer is also covered to the lateral surface of this electrically-conductive backing plate.
Implement in aspect one, this light emitting diode also comprises a crystal grain bearing base, this crystal grain bearing base has the supporting substrate of a conduction, this supporting substrate has a contrary end face and a bottom surface, its end face is recessed to form a groove, this groove is arranged wherein for this LED crystal particle, makes the crystal grain substrate of this LED crystal particle not be revealed in outside the end face of this supporting substrate; This supporting substrate is partly arranged in the through hole of this electrically-conductive backing plate, and its part be arranged in this through hole is coated by this insulation colloid, and its bottom surface is revealed in beyond the bottom surface of this electrically-conductive backing plate.
Implement in aspect at another, this light emitting diode also comprises a crystal grain bearing base, this crystal grain bearing base has the supporting substrate of a conduction and the refractive body of a tool highly reflective, this supporting substrate has a contrary end face and a bottom surface, and is arranged at its end face for this LED crystal particle; This refractive body is arranged at the end face of this supporting substrate, and to the crystal grain substrate of this LED crystal particle of major general around interior; This supporting substrate is partly arranged in the through hole of this electrically-conductive backing plate, and its part be arranged in this through hole is coated by this insulation colloid, and its bottom surface is revealed in beyond the bottom surface of this electrically-conductive backing plate.
In certain applications aspect, this LED package module comprises multiple light emitting diode, and the electrically-conductive backing plate of described light emitting diode is interconnected, and the conductive layer of described light emitting diode is interconnected.
Preferably, the main material of this electrically-conductive backing plate is aluminium, copper, iron, nickel, silver, gold, palladium, magnesium or its combination.
Beneficial effect of the present invention is: the present invention is by being arranged at the design in the through hole of electrically-conductive backing plate by the crystal grain substrate of reflective difference; light that semiconductor light emitting structure sends can be reduced in the follow-up possibility reflected by crystal grain substrate, and promote the brightness performance of LED package module.And by the design of part-structure assembly in encapsulation base of LED crystal particle, thickness and the size of LED package module effectively can be reduced, be beneficial to the development of slimming and microminiaturization.In addition, the present invention allows the bottom electrode of LED crystal particle be revealed in outside the bottom surface of encapsulation base, or the design outside the bottom surface being revealed in encapsulation base by supporting substrate, allow bottom electrode (or supporting substrate) coordinate and form with the top electrode of LED crystal particle the conductive layer be electrically connected, the electrode being connected to outside line as LED package module uses, structure is simple, is convenient to factures and applicationsh.And electrically-conductive backing plate adopts the design of metal material, there is reflective and the good advantage of thermal conductivity, contribute to luminance raising and the heat radiation of LED package module.
Accompanying drawing explanation
Fig. 1 is a schematic side view, and an existing package structure for LED is described;
Fig. 2 mono-stereogram, illustrates the first preferred embodiment of LED package module of the present invention;
Fig. 3 is a perspective exploded view, and the enforcement aspect of LED package module before assembling is described;
Fig. 4 is the vertical view of Fig. 2;
Fig. 5 is the cross-sectional schematic in the V-V direction along Fig. 2;
Fig. 6 is the upward view of Fig. 2;
Fig. 7 is a vertical view, and the application aspect of the LED package module of the first preferred embodiment is described;
Fig. 8 is the upward view of Fig. 7;
Fig. 9 is a schematic side view, and the Another Application aspect of the LED package module of the first preferred embodiment is described;
Figure 10 and Figure 11 is a schematic side view respectively, and the second preferred embodiment of LED package module of the present invention is described; And
Figure 12 and Figure 13 is the change aspect of the LED package module of the second preferred embodiment respectively.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in detail.
First embodiment
Consulting Fig. 2 to Fig. 6, is the first preferred embodiment of LED package module 1 of the present invention, and this LED package module 1 proposes a kind of innovation formula package design being applicable to vertical LED crystal grain.
Specifically, LED package module 1 of the present invention comprises at least one light emitting diode 2, following paragraph is first for single light emitting diode 2, the enforcement aspect of LED package module 1 is described, and the description of Related Art of multiple light emitting diode 2 can be proposed subsequent paragraph.
The light emitting diode 2 of LED package module 1 comprises encapsulation base 3, LED crystal particle 4, insulation colloid 5 and at least one wire 6 (this sentences two wires 6 for example).
Encapsulation base 3 is the primary structure of installing LED crystal particle 4, its possess simultaneously take advantage of carry, heat radiation and conducting function, and there is electrically-conductive backing plate 31, insulating barrier 32 and a conductive layer 33.
The electrically-conductive backing plate 31 of encapsulation base 3 mainly makes with the metal material of aluminium, copper, iron, nickel, silver, gold, palladium, magnesium, its alloy and/or above-mentioned material combination, there is contrary end face 311 and a bottom surface 312, and forming the through hole 313 that runs through its end face 311 and bottom surface 312, this through hole 313 can be installed wherein for LED crystal particle 4.Electrically-conductive backing plate 31 due to the present embodiment makes with metal material, and therefore it has good conductivity and thermal diffusivity, and can still keep enough structural strengths under thinner thickness specification (such as 0.15 millimeter).And furthermore, in the middle of the illumination application of visible/ultraviolet, the surface of electrically-conductive backing plate 31 can arrange silver metal layer or aluminum metal layer, by silver metal at the highly reflective of visible light wave range or the aluminum metal highly reflective at ultraviolet light wave band, and promote the overall brightness of LED package module 1.
The insulating barrier 32 of encapsulation base 3 is made with the material of tool electrical insulating property, and it covers the portion bottom surface 312 of this electrically-conductive backing plate 31, can avoid the problem that is short-circuited between positive and negative electrode power-conducting paths.
The conductive layer 33 of encapsulation base 3 adopts the metal of tool solderability to make, and at least covers the portion bottom surface 312 that electrically-conductive backing plate 31 does not arrange insulating barrier 32.Such as, herein conductive layer 33 be cover electrically-conductive backing plate 31 portion bottom surface 312 and be covered to the lateral surface 314 of electrically-conductive backing plate 31.
On the other hand; LED crystal particle 4 belongs to rectilinear LED crystal particle; its part-structure is arranged in the through hole 313 of electrically-conductive backing plate 31, and internal structure from bottom to top sequentially comprises bottom electrode 41, crystal grain substrate 42, speculum 43, semiconductor ray structure 44 and a top electrode 45.
Bottom electrode 41, the top electrode 45 of LED crystal particle 4 make with metal conductive materials, and it is according to the electrical configuration of semiconductor light emitting structure 44, can be positive electrode or the negative electrode of LED crystal particle 4 respectively.And in the present embodiment, bottom electrode 41 is the positive electrode of LED crystal particle 4, top electrode 45 is the negative electrode of LED crystal particle 4, and this is the common electrodes configuration mode of vertical LED crystal grain.
The crystal grain substrate 42 of LED crystal particle 4 is the main base material of carrying speculum 43, semiconductor light emitting structure 44, top electrode 45 homoeocrystalline texture, and it is arranged on bottom electrode 41, and is contained in the through hole 313 of electrically-conductive backing plate 31.In the present embodiment; crystal grain substrate 42 adopts tool conductivity but the poor substrate (such as silicon substrate) of reflective; significant light intensity decays problem can be there is by the light of its reflection; therefore crystal grain substrate 42 is contained in through hole 313; the possibility that light that semiconductor light emitting structure 44 sends is irradiated to crystal grain substrate 42 can be reduced, to avoid the decay of emitting brightness.
Furthermore, the thickness of the crystal grain substrate 42 of LED crystal particle 4 and the Thickness Design of electrically-conductive backing plate 31 can be both corresponding (such as both are 0.15 millimeter) by the present embodiment, and be allow crystal grain substrate 42 just be contained in the through hole 313 of electrically-conductive backing plate 31 on arranging, the crystal grain substrate 42 of low reflective is made not to be revealed in outside the end face 311 of electrically-conductive backing plate 31, and make luminous semiconductor light emitting structure 44 be revealed on the end face 311 of electrically-conductive backing plate 31, design so effectively can reduce the light degree of absorption of crystal grain substrate 42, promote the overall brightness of LED package module 1, and reduce the integral thickness of light emitting diode 2.
In addition, microminiaturized with the size of light emitting diode 2 for realizing LED package module 1, the area size of electrically-conductive backing plate 31 and through hole 313 thereof is designed to the area size slightly larger than LED crystal particle 4 by the present embodiment.Such as, for the LED crystal particle 4 of 1.2 millimeters × 1.2 millimeters, the size of through hole 313 can be designed to 1.6 millimeters × 1.6 millimeters, and the size of electrically-conductive backing plate 31 can be designed to 2.0 millimeters × 2.2 millimeters, the area size of single light emitting diode 2 is only 2.0 millimeters × 2.2 millimeters thus, and thickness is only 0.3 millimeter, and LED package design that is extremely microminiaturized, slimming can be realized.
On the other hand, because the present embodiment is designed to be revealed in outside the bottom surface 312 of electrically-conductive backing plate 31 by the bottom electrode 41 of LED crystal particle 4, itself and the same bottom surface 312 being positioned at electrically-conductive backing plate 31 of conductive layer 33 that can be considered that the top electrode 45 of LED crystal particle 4 extends, light emitting diode 2 can directly be used as surface-mount device (surface mountdevice, referred to as SMD).And the encapsulation base 3 of the present embodiment does not need to carry out extra line configuring for the bottom electrode 41 of LED crystal particle 4, therefore LED package module 1 is simple, easy to make and be easy to use with light emitting diode 2 structure.
And in different enforcement aspects; light emitting diode 2 also can be designed as and makes the thickness of its electrically-conductive backing plate 31 slightly thick or be slightly thinner than the thickness of crystal grain substrate 42, if can be formed outside end face 311 that crystal grain substrate 42 is not revealed in electrically-conductive backing plate 31, on end face 311 that luminous semiconductor light emitting structure 44 is revealed in electrically-conductive backing plate 31 and the bottom electrode 41 of LED crystal particle 4 be revealed in electrically-conductive backing plate 31 bottom surface 312 outside etc. architectural feature all right.
This insulation colloid 5 is arranged in the through hole 313 of this electrically-conductive backing plate 31, and by the crystal grain substrate 42 of this LED crystal particle 4 around interior; The two ends of this wire 6 are connected to top electrode 45 and this electrically-conductive backing plate 31 of this LED crystal particle 4.
Consult Fig. 7, Fig. 8, for comprising the enforcement aspect of the LED package module 1 of multiple (this sentences four for example) light emitting diode 2.Herein, the electrically-conductive backing plate 31 of each light emitting diode 2 is the formula design in flakes of interconnective entirety, and it is the sheet metal support of whole piece originally, can obtain requirement and interconnective light emitting diode 2 after cutting.In addition, this LED package module 1 comprising multiple light emitting diode 2 can carry out common electrode design, that the conductive layer 33 being located at electrically-conductive backing plate 31 bottom surface 312 is interconnected herein, therefore the top electrode 45 of each LED crystal particle 4 can mutual conduction, and forms the design of negative pole altogether.
In addition, because LED package module 1 comprises many LED crystal particle 4 herein, therefore can for the LED crystal particle 4 of the corresponding characteristic of particular optical application choice.Such as, when LED crystal particle 4 is respectively ruddiness, green glow, blue light and Yellow light emitting diode crystal grain 4, then LED package module 1 controlledly can send full color light.Or when LED crystal particle 4 is respectively ruddiness, green glow, blue light and infrared light emitting diodes crystal grain 4, then LED package module 1 controlledly can send full-color light or infrared light, and is applicable to communication related application.Or be work as the combination that LED crystal particle 4 is respectively ruddiness, ruddiness, ultraviolet light, blue light, then LED package module 1 can apply to plant illumination application.And in the illumination application of white light, two colour temperatures can be used be the LED crystal particle 4 of 2700K, the colour temperature of two other LED crystal particle 4 is then 5700K, to carry out the switching of white light colour temperature.Or on the other hand, one of them LED crystal particle 4 can also be replaced into optical sensor by LED package module 1, to carry out the photosensitive control of other LED crystal particle 4.The above-mentioned various enforcement aspects being all LED package module 1 and can applying according to this, user can adjust the configuration mode of LED crystal particle 4 according to need, is not limited with above-mentioned kenel or specific kenel.
With reference to Fig. 9, continuity foregoing teachings, the LED package module 1 including one or more light emitting diode 2 also can be packaged in optical lens 8 by user further, and realizes the secondary optical design of LED package module 1.
Second embodiment
In the first embodiment of the present invention, the design of LED package module 1 is that supposition LED crystal particle 4 is coincide mutually with encapsulation base 3 size.And when both sizes do not mate (area of such as LED crystal particle 4 and the through hole 313 of thickness much smaller than electrically-conductive backing plate 31), the second preferred embodiment of the present invention can be complied with and carry out extra configuration to LED package module 1.
Consult Figure 10, Figure 11, specifically, in the second preferred embodiment, light emitting diode 2 also comprises a crystal grain bearing base 7.Crystal grain bearing base 7 has the supporting substrate 71 of a conduction; this supporting substrate 71 has contrary end face 711 and a bottom surface 712; its end face 711 is recessed to form a groove 713; groove 713 is arranged wherein (such as being sticked together by die bond conducting resinl 73) for this LED crystal particle 4; the crystal grain substrate 42 of LED crystal particle 4 is made not to be revealed in outside the end face 711 of supporting substrate 71; and supporting substrate 71 is formed with the bottom electrode 41 of LED crystal particle 4 be electrically connected, and supporting substrate 71 is allowed to can be considered the extended structure of the bottom electrode 41 of LED crystal particle 4.Then, supporting substrate 71 can partly be arranged in the through hole 313 of electrically-conductive backing plate 31 together with LED crystal particle 4 by user, make its part be arranged in this through hole 313 colloid 5 that insulated coated, and its bottom surface 712 is revealed in beyond the bottom surface 312 of this electrically-conductive backing plate 31, and complete the setting of the LED package module 1 of the second embodiment.Accordingly, the setting of the supporting substrate 71 of the second embodiment can solve LED crystal particle 4 and the unmatched problem of encapsulation base 3 size.
Consult Figure 12, Figure 13, except the enforcement aspect of Figure 11, crystal grain bearing base 7 also can be designed as the refractive body 72 comprising a supporting substrate 71 and a tool highly reflective, and supporting substrate 71 is arranged at its end face 711 for LED crystal particle 4; Refractive body 72 is arranged at the end face 711 of supporting substrate 71, and by structures such as the crystal grain substrate 42 of LED crystal particle 4, bottom electrodes 41 around interior.Such as, the refractive body 72 in Figure 12 is reflective glue, and the refractive body 72 in Figure 13 is reflecting piece.Accordingly; after LED crystal particle 4 is arranged at the crystal grain bearing base 7 shown in Figure 12, Figure 13; also can solve LED crystal particle 4 and the unmatched problem of encapsulation base 3 size, and avoid the impact that the crystal grain substrate 42 of LED crystal particle 4 shows brightness.
Comprehensively above-mentioned two embodiment contents; LED package module 1 of the present invention is by being arranged at the design in the through hole 313 of electrically-conductive backing plate 31 by the crystal grain substrate 42 of reflective difference; the harmful effect of crystal grain substrate 42 pairs of overall brightnesses can be slowed down, and promote the brightness performance of LED package module 1.And by the design of part-structure assembly in encapsulation base 3 of LED crystal particle 4, LED package module 1, the thickness of light emitting diode 2 and size significantly can be reduced, realize its slimming and microminiaturized requirement.In addition, the bottom electrode 41 of LED crystal particle 4 is revealed in outside the bottom surface 312 of encapsulation base 3 by the present invention, it coordinates and the top electrode 45 of LED crystal particle 4 forms the conductive layer 33 be electrically connected, can be used as the electrode that LED package module 1 is connected with outside line to use, structure is simple, be easy to make, and can directly use as surface-mount device.And electrically-conductive backing plate 31 adopts the practice with the metal material of good light reflective and thermal conductivity, contribute to the brightness performance and the radiating effect that promote LED package module 1.So LED package module 1 of the present invention can reach object of the present invention really.
As described above, be only preferred embodiment of the present invention, and when not limiting scope of the invention process with this, the simple equivalence generally done according to claims of the present invention and patent specification content changes and modifies, and all still belongs to scope of the present invention.

Claims (7)

1. a LED package module, comprises at least one light emitting diode, it is characterized in that, this light emitting diode comprises:
One encapsulation base, has
One electrically-conductive backing plate, has a contrary end face and a bottom surface, and forms the through hole that runs through its end face and bottom surface,
One insulating barrier, tool electrical insulating property, and the portion bottom surface covering this electrically-conductive backing plate, and
One conductive layer, at least covers the portion bottom surface that this electrically-conductive backing plate does not arrange this insulating barrier;
One LED crystal particle, is partly arranged in the through hole of this electrically-conductive backing plate, and has
One bottom electrode, has conductivity,
One crystal grain substrate, have conductivity and low reflective, it is arranged on this bottom electrode, and is contained in the through hole of this electrically-conductive backing plate,
Semiconductor ray structure, is arranged on this crystal grain substrate, and outside the end face being revealed in this electrically-conductive backing plate, emits beam after reception electric power, and
One top electrode, is arranged on this semiconductor light emitting structure, and has conductivity;
One insulation colloid, is arranged in the through hole of this electrically-conductive backing plate, and to the crystal grain substrate of this LED crystal particle of major general around interior; And
At least one wire, two ends are connected to top electrode and this electrically-conductive backing plate of this LED crystal particle.
2. LED package module according to claim 1, is characterized in that: the bottom electrode of this LED crystal particle is revealed in outside the bottom surface of this electrically-conductive backing plate.
3. LED package module according to claim 1, is characterized in that: this conductive layer is also covered to the lateral surface of this electrically-conductive backing plate.
4. LED package module according to claim 1, it is characterized in that: this light emitting diode also comprises a crystal grain bearing base, this crystal grain bearing base has the supporting substrate of a conduction, this supporting substrate has a contrary end face and a bottom surface, its end face is recessed to form a groove, this groove is arranged wherein for this LED crystal particle, makes the crystal grain substrate of this LED crystal particle not be revealed in outside the end face of this supporting substrate; This supporting substrate is partly arranged in the through hole of this electrically-conductive backing plate, and its part be arranged in this through hole is coated by this insulation colloid, and its bottom surface is revealed in beyond the bottom surface of this electrically-conductive backing plate.
5. LED package module according to claim 1, it is characterized in that: this light emitting diode also comprises a crystal grain bearing base, this crystal grain bearing base has the supporting substrate of a conduction and the refractive body of a tool highly reflective, this supporting substrate has a contrary end face and a bottom surface, and is arranged at its end face for this LED crystal particle; This refractive body is arranged at the end face of this supporting substrate, and to the crystal grain substrate of this LED crystal particle of major general around interior; This supporting substrate is partly arranged in the through hole of this electrically-conductive backing plate, and its part be arranged in this through hole is coated by this insulation colloid, and its bottom surface is revealed in beyond the bottom surface of this electrically-conductive backing plate.
6. LED package module according to claim 1, it is characterized in that: this LED package module comprises multiple light emitting diode, the electrically-conductive backing plate of described light emitting diode is interconnected, and the conductive layer of described light emitting diode is interconnected.
7. LED package module according to claim 1, is characterized in that: the main material of this electrically-conductive backing plate is aluminium, copper, iron, nickel, silver, gold, palladium, magnesium or its combination.
CN201410044078.3A 2014-01-29 2014-01-29 LED packaging module group Pending CN104810456A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
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Application Number Priority Date Filing Date Title
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Publications (1)

Publication Number Publication Date
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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107331658A (en) * 2017-07-27 2017-11-07 旭宇光电(深圳)股份有限公司 Multicarity plant illumination LED encapsulation structure
CN112838154A (en) * 2021-02-16 2021-05-25 深圳市众芯诺科技有限公司 Ultrathin ultraviolet LED chip with high-efficiency light emitting
CN113540052A (en) * 2021-06-16 2021-10-22 佛山市国星光电股份有限公司 Stacking packaging structure and LED display device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101256989A (en) * 2008-01-31 2008-09-03 金芃 Semiconductor epitaxial thin film encapsulation of vertical structure
CN102136431A (en) * 2010-01-22 2011-07-27 亿光电子工业股份有限公司 Light emitting diode package and manufacturing method thereof
US20120313131A1 (en) * 2010-03-30 2012-12-13 Dai Nippon Printing Co., Ltd. Led leadframe or led substrate, semiconductor device, and method for manufacturing led leadframe or led substrate

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101256989A (en) * 2008-01-31 2008-09-03 金芃 Semiconductor epitaxial thin film encapsulation of vertical structure
CN102136431A (en) * 2010-01-22 2011-07-27 亿光电子工业股份有限公司 Light emitting diode package and manufacturing method thereof
US20120313131A1 (en) * 2010-03-30 2012-12-13 Dai Nippon Printing Co., Ltd. Led leadframe or led substrate, semiconductor device, and method for manufacturing led leadframe or led substrate

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN107331658A (en) * 2017-07-27 2017-11-07 旭宇光电(深圳)股份有限公司 Multicarity plant illumination LED encapsulation structure
CN112838154A (en) * 2021-02-16 2021-05-25 深圳市众芯诺科技有限公司 Ultrathin ultraviolet LED chip with high-efficiency light emitting
CN113540052A (en) * 2021-06-16 2021-10-22 佛山市国星光电股份有限公司 Stacking packaging structure and LED display device
CN113540052B (en) * 2021-06-16 2023-12-15 佛山市国星光电股份有限公司 Stacked packaging structure and LED display device

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Application publication date: 20150729