CN104795461A - GaAs基二维电子气等离子体震荡太赫兹探测器的方法 - Google Patents
GaAs基二维电子气等离子体震荡太赫兹探测器的方法 Download PDFInfo
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- CN104795461A CN104795461A CN201510175330.9A CN201510175330A CN104795461A CN 104795461 A CN104795461 A CN 104795461A CN 201510175330 A CN201510175330 A CN 201510175330A CN 104795461 A CN104795461 A CN 104795461A
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- epitaxial wafer
- gaas
- layer
- electron gas
- dimensional electron
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Links
- 229910001218 Gallium arsenide Inorganic materials 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 25
- 230000005533 two-dimensional electron gas Effects 0.000 title claims abstract description 21
- 238000004519 manufacturing process Methods 0.000 title abstract description 4
- 230000010355 oscillation Effects 0.000 title abstract 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 238000001704 evaporation Methods 0.000 claims abstract description 15
- 238000001259 photo etching Methods 0.000 claims abstract description 15
- 230000008020 evaporation Effects 0.000 claims abstract description 13
- 239000000758 substrate Substances 0.000 claims abstract description 7
- 238000002360 preparation method Methods 0.000 claims abstract description 6
- 238000005530 etching Methods 0.000 claims abstract description 5
- 238000000137 annealing Methods 0.000 claims abstract description 3
- 230000009514 concussion Effects 0.000 claims description 14
- 230000007704 transition Effects 0.000 claims description 12
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 8
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 6
- 238000005260 corrosion Methods 0.000 claims description 5
- 230000007797 corrosion Effects 0.000 claims description 5
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 4
- LTUDISCZKZHRMJ-UHFFFAOYSA-N potassium;hydrate Chemical compound O.[K] LTUDISCZKZHRMJ-UHFFFAOYSA-N 0.000 claims description 3
- 229910001868 water Inorganic materials 0.000 claims description 3
- 230000004044 response Effects 0.000 abstract description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 6
- 229910052681 coesite Inorganic materials 0.000 abstract 3
- 229910052906 cristobalite Inorganic materials 0.000 abstract 3
- 239000000377 silicon dioxide Substances 0.000 abstract 3
- 235000012239 silicon dioxide Nutrition 0.000 abstract 3
- 229910052682 stishovite Inorganic materials 0.000 abstract 3
- 229910052905 tridymite Inorganic materials 0.000 abstract 3
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 230000001105 regulatory effect Effects 0.000 abstract 1
- 229920002120 photoresistant polymer Polymers 0.000 description 37
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 18
- 238000001514 detection method Methods 0.000 description 11
- 230000005669 field effect Effects 0.000 description 11
- 230000000694 effects Effects 0.000 description 9
- 239000003292 glue Substances 0.000 description 8
- 239000010931 gold Substances 0.000 description 8
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 6
- XSTXAVWGXDQKEL-UHFFFAOYSA-N Trichloroethylene Chemical group ClC=C(Cl)Cl XSTXAVWGXDQKEL-UHFFFAOYSA-N 0.000 description 6
- 238000004140 cleaning Methods 0.000 description 6
- 238000001035 drying Methods 0.000 description 6
- UBOXGVDOUJQMTN-UHFFFAOYSA-N trichloroethylene Natural products ClCC(Cl)Cl UBOXGVDOUJQMTN-UHFFFAOYSA-N 0.000 description 6
- 230000008859 change Effects 0.000 description 5
- 238000011161 development Methods 0.000 description 4
- 238000013404 process transfer Methods 0.000 description 4
- 239000004065 semiconductor Substances 0.000 description 4
- 238000004528 spin coating Methods 0.000 description 4
- 230000008901 benefit Effects 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000002207 thermal evaporation Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000002800 charge carrier Substances 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000004090 dissolution Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000012535 impurity Substances 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000005259 measurement Methods 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- 229910000927 Ge alloy Inorganic materials 0.000 description 1
- 229910000990 Ni alloy Inorganic materials 0.000 description 1
- 239000006096 absorbing agent Substances 0.000 description 1
- 239000002390 adhesive tape Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
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- 238000004590 computer program Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005284 excitation Effects 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000001459 lithography Methods 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000001465 metallisation Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 238000005057 refrigeration Methods 0.000 description 1
- 230000027756 respiratory electron transport chain Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
- 238000007711 solidification Methods 0.000 description 1
- 230000008023 solidification Effects 0.000 description 1
- 238000003756 stirring Methods 0.000 description 1
- 238000004861 thermometry Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/115—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation
- H01L31/119—Devices sensitive to very short wavelength, e.g. X-rays, gamma-rays or corpuscular radiation characterised by field-effect operation, e.g. MIS type detectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/184—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP
- H01L31/1844—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIIBV compounds, e.g. GaAs, InP comprising ternary or quaternary compounds, e.g. Ga Al As, In Ga As P
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Junction Field-Effect Transistors (AREA)
Abstract
Description
Claims (9)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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CN201510175330.9A CN104795461B (zh) | 2015-04-14 | 2015-04-14 | GaAs基二维电子气等离子体震荡太赫兹探测器的方法 |
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CN201510175330.9A CN104795461B (zh) | 2015-04-14 | 2015-04-14 | GaAs基二维电子气等离子体震荡太赫兹探测器的方法 |
Publications (2)
Publication Number | Publication Date |
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CN104795461A true CN104795461A (zh) | 2015-07-22 |
CN104795461B CN104795461B (zh) | 2016-08-17 |
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CN201510175330.9A Active CN104795461B (zh) | 2015-04-14 | 2015-04-14 | GaAs基二维电子气等离子体震荡太赫兹探测器的方法 |
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Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112002999A (zh) * | 2020-08-03 | 2020-11-27 | 首都师范大学 | 一种THz天线的简易制作方法 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040201076A1 (en) * | 2003-04-08 | 2004-10-14 | Michael Shur | Method of radiation generation and manipulation |
US20050161749A1 (en) * | 2002-05-07 | 2005-07-28 | California Institute Of Technology | Apparatus and method for vacuum-based nanomechanical energy force and mass sensors |
CN102593235A (zh) * | 2012-03-19 | 2012-07-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | 微波太赫兹波探测器及其制备方法 |
CN103489937A (zh) * | 2013-10-11 | 2014-01-01 | 中国科学院半导体研究所 | 一种非对称沟道量子点场效应光子探测器 |
CN203760501U (zh) * | 2014-03-31 | 2014-08-06 | 中国电子科技集团公司第十三研究所 | GaN基等离子激元探测器 |
-
2015
- 2015-04-14 CN CN201510175330.9A patent/CN104795461B/zh active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20050161749A1 (en) * | 2002-05-07 | 2005-07-28 | California Institute Of Technology | Apparatus and method for vacuum-based nanomechanical energy force and mass sensors |
US20040201076A1 (en) * | 2003-04-08 | 2004-10-14 | Michael Shur | Method of radiation generation and manipulation |
CN102593235A (zh) * | 2012-03-19 | 2012-07-18 | 中国科学院苏州纳米技术与纳米仿生研究所 | 微波太赫兹波探测器及其制备方法 |
CN103489937A (zh) * | 2013-10-11 | 2014-01-01 | 中国科学院半导体研究所 | 一种非对称沟道量子点场效应光子探测器 |
CN203760501U (zh) * | 2014-03-31 | 2014-08-06 | 中国电子科技集团公司第十三研究所 | GaN基等离子激元探测器 |
Non-Patent Citations (1)
Title |
---|
D MOROZOV ET AL: "High sensitivity terahertz detector using two-dimensional electron gas absorber and tunnel junction contacts as a thermometer", 《MILLIMETER AND SUBMILLIMETER DETECTORS AND INSTRUMENTATION FOR ASTRONOMY III. EDITED BY ZMUIDZINAS, JONAS; HOLLAND, WAYNE S.; WITHINGTON, STAFFORD; DUNCAN, WILLIAM D.. PROCEEDINGS OF THE SPIE》 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112002999A (zh) * | 2020-08-03 | 2020-11-27 | 首都师范大学 | 一种THz天线的简易制作方法 |
CN112002999B (zh) * | 2020-08-03 | 2023-05-23 | 首都师范大学 | 一种THz天线的简易制作方法 |
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CN104795461B (zh) | 2016-08-17 |
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C14 | Grant of patent or utility model | ||
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CB03 | Change of inventor or designer information |
Inventor after: Xu Jianxing Inventor after: Ni Haiqiao Inventor after: Niu Zhichuan Inventor after: Zhang Lichun Inventor after: Cha Guowei Inventor after: Wei Sihang Inventor after: He Zhenhong Inventor before: Xu Jianxing Inventor before: Cha Guowei Inventor before: Zhang Lichun Inventor before: Wei Sihang Inventor before: Ni Haiqiao Inventor before: He Zhenhong Inventor before: Niu Zhichuan |
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