CN104795435B - Silicon carbide power element - Google Patents
Silicon carbide power element Download PDFInfo
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- CN104795435B CN104795435B CN201410027152.0A CN201410027152A CN104795435B CN 104795435 B CN104795435 B CN 104795435B CN 201410027152 A CN201410027152 A CN 201410027152A CN 104795435 B CN104795435 B CN 104795435B
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- power element
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 38
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 38
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 125000000623 heterocyclic group Chemical group 0.000 claims description 4
- 230000001186 cumulative effect Effects 0.000 claims 2
- 230000015556 catabolic process Effects 0.000 abstract description 21
- 239000010410 layer Substances 0.000 description 15
- 230000005684 electric field Effects 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 230000000454 anti-cipatory effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000003763 carbonization Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 239000002344 surface layer Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
Abstract
A kind of silicon carbide power element, include a silicon carbide substrate, a power component structure and a terminal structure.The silicon carbide substrate has a drift layer, and the drift layer has one first electric conductivity and includes an active area and a terminal area；The power component structure setting is in the active area；And the terminal structure is arranged at the terminal area and has one second electric conductivity, the terminal structure include at least one around the outside of the power component structure and the adjacent with the power component structure first doping ring and at least one around the first doping ring the second doping ring.Accordingly, the present invention has first doping concentration for being less than the second doping ring and first doping depth for being more than the second doping ring by setting the first doping ring, improves the breakdown voltage of the silicon carbide power element.
Description
Technical field
The present invention relates to a kind of semiconductor element, espespecially a kind of power component with terminal structure.
Background technology
Power component can be widely applied, and to form various switch elements, such as the switch of power supply unit, telecommunications are opened
Pass, power switch etc., its demand except active area can by high current, also to possess can be born in terminal area it is larger
Breakdown voltage.
Therefore for power component, in design it is upper except for can conducting electric current active area, it is also necessary to designing can
Avoid against collapse phenomenon anticipatory terminal structure during operation partially, to improve the reliability of element, the class of conventional terminal structure
Type has zone oxidation（Local oxidation of silicon, LOCOS）, electric field flat board（field plate）And protection
Ring（guard ring）Deng, and in U.S. patent Nos disclose No. US20100032685, also disclosing one kind has terminal knot
The power component of structure, the substrate of the power component include a drift layer with the first conduction type, one with this first
The cushion of the second different conduction type of conduction type and a terminal structure with the second conduction type.The cushion position
In on the drift layer, and a P-N junctions are formed with the drift layer, the terminal structure be arranged at the drift layer and with the cushion phase
Neighbour, wherein, the cushion includes that a part extends on the terminal structure and part covers the rank portion of the terminal structure, uses pair
Electric field caused by anti-high breakdown voltage.
However, above-mentioned mode is to be additionally formed the cushion to improve the ability of power component confrontation breakdown voltage,
So so that the power component is not only needing to increase the step of making the cushion in technique, and the power component is in right
Anti- breakdown voltage still has improved space in effect.
The content of the invention
The main object of the present invention, it is solve known power element in the design of confrontation breakdown voltage, need to additionally sets
The problem of putting the cushion, and increasing the processing step of the power component, and the power component is in the energy of confrontation breakdown voltage
Power still has improved space.
For the above-mentioned purpose, the present invention provides a kind of silicon carbide power element with terminal structure, includes a carbonization
Silicon substrate, a power component structure and a terminal structure.The silicon carbide substrate has a drift layer, and the drift layer has one the
One electric conductivity simultaneously includes an active area and one around the terminal area of the active area；The power component structure setting in
The active area；And the terminal structure is arranged at the terminal area and has second electric conductivity different from first electric conductivity,
The terminal structure includes at least one around the outside of the power component structure and adjacent with the power component structure first
Adulterate ring and at least one around this first doping ring second doping ring.
Wherein, this first doping ring have one be less than this second doping ring the first doping concentration and one be more than this second
Adulterate the first doping depth of ring.
Consequently, it is possible to the present invention makes the first doping ring tool by the first doping ring and the setting of second doping
There are first doping concentration less than the second doping ring and first doping depth more than the second doping ring, be not required to volume
Outer setting cushion, you can increase the ability that the terminal structure resists the breakdown voltage, to improve the silicon carbide power element
Reliability, and reduce the manufacturing cost of the silicon carbide power element.
Brief description of the drawings
Fig. 1 is the structural representation of first embodiment of the invention.
Fig. 2 is the breakdown voltage schematic diagram that first embodiment of the invention compares known power element.
Fig. 3 is the structural representation of second embodiment of the invention.
Fig. 4 is the structural representation of third embodiment of the invention.
Fig. 5 is the structural representation of fourth embodiment of the invention.
Fig. 6 is the structural representation of fifth embodiment of the invention.
Embodiment
Detailed description for the present invention and technology contents, now just schema is coordinated to be described as follows：
Refer to shown in Fig. 1, be the structural representation of first embodiment of the invention, as shown in the figure：The present invention provides a kind of
Silicon carbide power element with terminal structure, include a silicon carbide substrate 10, a power component structure 20 and a terminal
Structure 30.The silicon carbide substrate 10 includes a basic unit 12 and a drift layer 11 in the basic unit 12, the basic unit 12 with
The drift layer 11 is respectively provided with one first electric conductivity, and in this embodiment, first electric conductivity can be n-type doping, and the basic unit 12 has
There is the electron concentration more than the drift layer 11, but be not limited system.The drift layer 11 further includes an active area
111 and a terminal area 112, the terminal area 112 is surrounded on around the active area 111.
The power component structure 20 is arranged at the active area 111, and the power component structure 20 can be Schottky diode knot
Structure, MOSFET structure etc., such as in this embodiment, being with the power component structure 20 should
Exemplified by Schottky diode structure, the Schottky diode structure includes a Xiao Jijie contacted with the silicon carbide substrate 10 formation Xiao Ji
Surface layer 21 and one is arranged at the metal conducting layer 22 in the Xiao Ji junction layers 21；And the terminal structure 30 is arranged at the termination environment
Domain 112, and there is second electric conductivity different from first electric conductivity, second electric conductivity can be that p-type is adulterated herein, the terminal
Structure 30 includes at least one first doping ring 31 and at least one second doping ring 32, and the first doping ring 31 is around the work(
Adjacent with the power component structure 20 on the outside of rate component structure 20, the second doping ring 32 is then around the first doping ring 31
Outside, in this embodiment, the first doping ring 31 with the second doping ring 32 respectively by taking 5 and 7 as an example, but not with
This is limitation, the balance between confrontation collapse electric field ability can be needed to be adjusted according to element area and element, in addition, should
Silicon carbide power element can also be arranged at the lower section of the power component structure 20 comprising an at least impure well 34, the impure well 34,
And the doping with second electric conductivity.
In the first embodiment, it is characterised in that set the first doping ring 31 to have one to be less than the second doping ring 32
First doping concentration and one be more than this second doping ring 32 the first doping depth, here, first doping concentration between
1E17 to 1E19cm-3, first doping depth is between 0.5 to 1.5um, and one second doping concentration of the second doping ring 32 is
Between 1E18 to 5E19cm-3, one second doping depth is to 1um, in this way, it is close to make to compare the second doping ring 32 between 0.3
The first doping ring 31 of the power component structure 20, its between the basic unit 12 at a distance of a short distance D being closer to, when the carbon
When SiClx power component is delivered to a reverse bias, the first doping ring 31 will be helpful to result from the drift layer 11 one empty
Weary curve distribution is gentle, reduces the distribution of electric field, and improves the ability of silicon carbide power element confrontation breakdown voltage.
Such as refer to shown in Fig. 2, the breakdown voltage schematic diagram of known power element is compared for first embodiment of the invention,
First embodiment of the invention and the structure of the known power element are compared, and difference is that the terminal structure 30 of first embodiment has
The first doping ring 31, the terminal structure 30 of the known power element use the protection ring of the similar second doping ring 32, from
Understood in Fig. 2, the electrical curve X of known power element breakdown voltage is about 1070 volts, the electrical song of first embodiment
Line Y breakdown voltage is about 1471 volts, and first embodiment is compared with the known power element, and breakdown voltage about lifts 400 volts
It is special.
Refer to shown in Fig. 3, be the structural representation of second embodiment of the invention, it is in a second embodiment, real with first
Example is applied to compare, it is characterised in that first doping ring 31a has a first doping width for being more than the second doping ring 32, and
The terminal structure 30 also includes an at least subring 33, one the 3rd doping concentration of the subring 33 be between 1E18 extremely
5E19cm-3Between, and the position set is overlapping with first doping ring 31a, the subring 33 and the first doping ring 31a phases
Compared with, there is less 3rd doping depth, a 3rd larger doping concentration and a less 3rd doping width, then
Person, the impure well 34 is also comprising one first impure well 341 and a position second impure well overlapping with first impure well 341
342, it is dense with the larger doping of a less doping depth and one that first impure well 341 compares second impure well 342
Degree.Accordingly, second embodiment, to bear less voltage drop, shares more uniform electricity by the setting of the subring 33
, the silicon carbide power element is had higher breakdown voltage.
Refer to shown in Fig. 4, be the structural representation of third embodiment of the invention, it is in the third embodiment, real with second
Apply example to compare, it is characterised in that first doping ring 31b has the first doping width small compared with the subring 33, also, should
First doping width is also less than one second doping width of the second doping ring 32.So set, this can be avoided first to mix
For heterocycle 31b when carrying out the high energy dopant of deeper, first doping ring 31b produces the possibility of touching each other, and
The situation for avoiding therefore causing the uniformity of breakdown voltage bad occurs.
Refer to shown in Fig. 5, be the structural representation of fourth embodiment of the invention, it is in the fourth embodiment, real with first
Apply example to compare, it is characterised in that except the impure well 34 includes first impure well 341 and second impure well 342, the end
3rd doping width of the subring 33 of end structure 30 is identical with the first doping width of the first doping ring 31, and same
Sample has the ability for improving silicon carbide power element confrontation breakdown voltage.
Refer to shown in Fig. 6, be the structural representation of fifth embodiment of the invention, it is real with first in the 5th embodiment
Example is applied to compare, it is characterised in that this first doping ring 31 have it is multiple, this first doping ring 31 between at a distance of at least one first away from
From S1, the second doping ring 32 also have it is multiple, at a distance of at least one more than first distance S1's between the second doping ring 32
Second distance S2, between the adjacent first doping ring 31 and the second doping ring 32, is then more than first distance S1 at a distance of one
And the 3rd distance S3 less than second distance S2, also, further, in the present embodiment, the first distance S1 with this
Two distance S2 also as away from the power component structure 20 and gradually increase, such as first distance S1 can be respectively 1.5um,
1.6um, 1.7um, 1.8um, the 3rd distance S3 can be 1.9um, second distance S2 can be 2.0um, 2.1um ..., 2.5um,
Accordingly, more uniform Electric Field Distribution can be formed in the drift layer 11, can also improves the breakdown voltage of the silicon carbide power element.
In summary, because the present invention is not required to additionally set the cushion, have by the first doping ring be less than this
First doping concentration of two doping rings and first doping depth more than the second doping ring, you can increase the terminal knot
Structure resists the ability of the breakdown voltage, to improve the reliability of the silicon carbide power element, and reduces the silicon carbide power element
Manufacturing cost, furthermore, the present invention also sets up the subring, and can be by adjusting between the subring and the first doping ring
First doping concentration and the 3rd doping concentration, the first doping width and the 3rd doping width and first doping depth
With the collocation of the 3rd doping depth, increase the breakdown voltage of the silicon carbide power element, in addition, the present invention can also be used this
The change distance design of one distance, the second distance and the 3rd distance, uniformly the Electric Field Distribution in the drift layer, is carried with reaching
Rise the effect of the breakdown voltage of the silicon carbide power element.
The present invention is described in detail above, but as described above, it is only that the preferred of the present invention applies example, when
The scope that the present invention is implemented can not be limited.I.e. all equivalent changes and modifications made according to the present patent application scope etc., all should still belong to
In the claims of the present invention.
Claims (12)
1. a kind of silicon carbide power element, it is characterised in that the silicon carbide power element includes：
One has the silicon carbide substrate of a drift layer, and the drift layer has one first electric conductivity and the drift layer includes
One active area and one is around the terminal area of the active area；
One is arranged at the power component structure in the active area；And
One is arranged on the terminal area and has a terminal structure with the second different electric conductivity of first electric conductivity,
The terminal structure includes at least one around the outside of the power component structure and adjacent with the power component structure
First doping ring, at least one around described first doping ring second doping ring and at least one with described first doping ring
Overlapping subring；
Wherein, the first doping ring is larger with less first doping concentration and one compared to the described second doping ring
The first doping depth, the subring have one be less than first doping depth the 3rd doping depth and more than described
3rd doping concentration of the first doping concentration.
2. silicon carbide power element according to claim 1, it is characterised in that the silicon carbide power element is also comprising extremely
Few one is arranged at the impure well of the lower section of the power component structure, and the impure well has second electric conductivity.
3. silicon carbide power element according to claim 2, it is characterised in that the impure well includes one first impure well
And position second impure well overlapping with first impure well, first impure well is compared to second impure well
With a less doping depth and a larger doping concentration.
4. silicon carbide power element according to claim 1, it is characterised in that the first doping ring is compared to described the
Two doping rings have a less first doping width.
5. silicon carbide power element according to claim 1, it is characterised in that the subring is mixed compared to described first
Heterocycle has a 3rd larger doping width.
6. silicon carbide power element according to claim 1, it is characterised in that the first doping ring is compared to described the
Two doping rings have a first larger doping width.
7. silicon carbide power element according to claim 1, it is characterised in that the subring is mixed compared to described first
Heterocycle has a less 3rd doping width.
8. silicon carbide power element according to claim 1, it is characterised in that the subring is mixed compared to described first
Heterocycle has an identical the 3rd doping width.
9. silicon carbide power element according to claim 1, it is characterised in that there is multiple first doping rings, institute
State between the first doping ring at a distance of at least one first distance, there are multiple second doping rings, between the second doping ring
At a distance of an at least second distance, the second distance is more than first distance.
10. silicon carbide power element according to claim 9, it is characterised in that the adjacent first doping ring and institute
State at a distance of one the 3rd distance between the second doping ring, the 3rd distance be more than the described first distance and less than described second away from
From.
11. silicon carbide power element according to claim 9, it is characterised in that there is multiple first distances, and institute
The first distance is stated with sequentially cumulative away from the power component structure.
12. silicon carbide power element according to claim 9, it is characterised in that there is multiple second distances, and institute
Second distance is stated with sequentially cumulative away from the power component structure.
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| CN201410027152.0A CN104795435B (en) | 2014-01-21 | 2014-01-21 | Silicon carbide power element |
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| CN201410027152.0A CN104795435B (en) | 2014-01-21 | 2014-01-21 | Silicon carbide power element |
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| CN104795435A CN104795435A (en) | 2015-07-22 |
| CN104795435B true CN104795435B (en) | 2017-11-24 |
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| CN110534559B (en) * | 2019-09-03 | 2021-07-20 | 深圳第三代半导体研究院 | Silicon carbide semiconductor device terminal and manufacturing method thereof |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102856356A (en) * | 2012-09-28 | 2013-01-02 | 中国科学院微电子研究所 | Terminal for semiconductor power device |
| CN103489910A (en) * | 2013-09-17 | 2014-01-01 | 电子科技大学 | Power semiconductor device and manufacturing method thereof |
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| US8803277B2 (en) * | 2011-02-10 | 2014-08-12 | Cree, Inc. | Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN102856356A (en) * | 2012-09-28 | 2013-01-02 | 中国科学院微电子研究所 | Terminal for semiconductor power device |
| CN103489910A (en) * | 2013-09-17 | 2014-01-01 | 电子科技大学 | Power semiconductor device and manufacturing method thereof |
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Effective date of registration: 20200617 Address after: Room 1225, area B, 12 / F, block B, Lane 2855, Huqingping highway, Qingpu District, Shanghai Patentee after: Shanghai hanqian Technology Co., Ltd Address before: 5 / F 6 / F, 18 Puding Road, Hsinchu, Taiwan, China Patentee before: HESTIA POWER Inc. |