CN104795435A - Silicon carbide power component - Google Patents
Silicon carbide power component Download PDFInfo
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- CN104795435A CN104795435A CN201410027152.0A CN201410027152A CN104795435A CN 104795435 A CN104795435 A CN 104795435A CN 201410027152 A CN201410027152 A CN 201410027152A CN 104795435 A CN104795435 A CN 104795435A
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- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 title claims abstract description 40
- 229910010271 silicon carbide Inorganic materials 0.000 title claims abstract description 40
- 239000000758 substrate Substances 0.000 claims abstract description 9
- 230000001186 cumulative effect Effects 0.000 claims 2
- 230000015556 catabolic process Effects 0.000 description 20
- 239000011248 coating agent Substances 0.000 description 9
- 238000000576 coating method Methods 0.000 description 9
- 230000005684 electric field Effects 0.000 description 7
- 230000008485 antagonism Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000000454 anti-cipatory effect Effects 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000001737 promoting effect Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/0619—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE] with a supplementary region doped oppositely to or in rectifying contact with the semiconductor containing or contacting region, e.g. guard rings with PN or Schottky junction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
- H01L29/872—Schottky diodes
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
A silicon carbide power component comprises a silicon carbide substrate, a power component structure and a terminal structure. The silicon carbide substrate comprises a drift layer, and the drift layer with first conductivity comprises an active area and a terminal area. The power component structure is arranged in the active area. The terminal structure with second conductivity is arranged in the terminal area, and comprises at least one first doped ring and at least one second doped ring, wherein the first doped ring surrounds the power component structure and is adjacent to the power component structure, and the second doped ring surrounds the first doped ring. The first doped concentration of the first doped ring is lower than the doped concentration of the second doped ring, and the first doped depth of the first doped ring is greater than the doped depth of the second doped ring, and thus, the collapse voltage of the silicon carbide power component is improved.
Description
Technical field
The present invention relates to a kind of semiconductor element, espespecially a kind of power component with terminal structure.
Background technology
Power component can be applied widely, to form various switch element, the switch, telecommunication switches, power switch etc. of such as power supply unit, its demand except in active area by big current, also to possess and can bear larger breakdown voltage in terminal area.
Therefore for power component, except for can the active area of On current in design, also need design can avoid against collapse phenomenon anticipatory terminal structure when partially operating, to improve the reliability of element, the type of conventional terminal structure has zone oxidation (local oxidation of silicon, LOCOS), electric field flat board (field plate) and guard ring (guard ring) etc., and disclose in No. US20100032685 at U.S. patent Nos, also disclose a kind of power component with terminal structure, the substrate of this power component includes the drift layer that has the first conduction type, one resilient coating and with second conduction type different with this first conduction type has the terminal structure of the second conduction type.This resilient coating is positioned on this drift layer, and form a P-N junction with this drift layer, this terminal structure is arranged at this drift layer and adjacent with this resilient coating, wherein, this resilient coating comprises a part and extends to the rank portion this terminal structure partly covering this terminal structure, uses the electric field that antagonism high breakdown voltage produces.
But, above-mentioned mode is additionally form this resilient coating to improve the ability of this power component antagonism breakdown voltage, so, make this power component not only need to increase the step making this resilient coating in technique, and this power component still have the space of improvement in antagonism breakdown voltage in effect.
Summary of the invention
Main purpose of the present invention, be to solve known power element in the design of antagonism breakdown voltage, need this resilient coating be additionally set, and increases the problem of the processing step of this power component, and this power component still has the space of improvement in the ability resisting breakdown voltage.
For reaching above-mentioned purpose, the invention provides a kind of silicon carbide power element with terminal structure, including a silicon carbide substrate, a power component structure and a terminal structure.This silicon carbide substrate has a drift layer, and this drift layer has one first conductivity and includes an active area and around the terminal area of this active area; This power component vibrational power flow is in this active area; And this terminal structure is arranged at this terminal area and have the second conductivity that one differs from this first conductivity, this terminal structure includes at least one outside around this power component structure and adjacent with this power component structure first to adulterate ring and at least onely to adulterate ring around this first second of ring that adulterates.
Wherein, this first doping ring has the first doping depth that first doping content and being less than this second doping ring is greater than this second doping ring.
Thus, the present invention is by this first doping ring and this second setting of adulterating, this the first doping ring is made to have this first doping content being less than this second doping ring and this first doping depth being greater than this second doping ring, do not need additionally to arrange this resilient coating, the ability that this terminal structure resists this breakdown voltage can be increased, to improve the reliability of this silicon carbide power element, and reduce the manufacturing cost of this silicon carbide power element.
Accompanying drawing explanation
Fig. 1 is the structural representation of first embodiment of the invention.
Fig. 2 is the breakdown voltage schematic diagram that first embodiment of the invention compares known power element.
Fig. 3 is the structural representation of second embodiment of the invention.
Fig. 4 is the structural representation of third embodiment of the invention.
Fig. 5 is the structural representation of fourth embodiment of the invention.
Fig. 6 is the structural representation of fifth embodiment of the invention.
Embodiment
Detailed description for the present invention and technology contents, now just coordinate graphic being described as follows:
Referring to shown in Fig. 1, is the structural representation of first embodiment of the invention, as shown in the figure: the invention provides a kind of silicon carbide power element with terminal structure, includes silicon carbide substrate 10, power component structure 20 and a terminal structure 30.This silicon carbide substrate 10 includes a basic unit 12 and and is positioned at drift layer 11 in this basic unit 12, this basic unit 12 all has one first conductivity with this drift layer 11, in this embodiment, this first conductivity can be N-type doping, this basic unit 12 has the electron concentration being greater than this drift layer 11, but not as restriction.This drift layer 11 includes active area 111 and a terminal area 112 further, and this terminal area 112 is surrounded on around this active area 111.
This power component structure 20 is arranged at this active area 111, this power component structure 20 can be Schottky diode structure, MOSFET structure etc., such as in this embodiment, be this Schottky diode structure for this power component structure 20, this Schottky diode structure comprises one and forms Xiao Ji junction layer that Xiao Ji contacts 21 and with this silicon carbide substrate 10 and be arranged at metal conducting layer 22 in this Xiao Ji junction layer 21, and this terminal structure 30 is arranged at this terminal area 112, and there is the second conductivity that one differs from this first conductivity, the doping of P type is can be in this this second conductivity, this terminal structure 30 includes at least one first doping ring 31 and at least one second doping ring 32, this the first doping ring 31 is adjacent with this power component structure 20 outside this power component structure 20, this the second doping 32, ring is around the outside of this first doping ring 31, in this embodiment, this the first doping ring 31 second adulterates ring 32 respectively for 5 and 7 with this, but not as restriction, can adjust according to the balance between element area and element need against corruption electric field energy power, in addition, this silicon carbide power element also can comprise at least one impure well 34, this impure well 34 is arranged at the below of this power component structure 20, and there is the doping of this second conductivity.
In a first embodiment, it is characterized in that arranging this first doping ring 31 and have the first doping depth that first doping content and being less than this second doping ring 32 is greater than this second doping ring 32, at this, this first doping content is between 1E17 to 1E19cm
-3, this first doping depth is between 0.5 to 1.5um, and one second doping content of this second doping ring 32 is between 1E18 to 5E19cm
-3one second doping depth is between 0.3 to 1um, so, make to compare this second doping ring 32 this first doping ring 31 near this power component structure 20, at a distance of a more close short distance D between itself and this basic unit 12, when this silicon carbide power element is bestowed a reverse bias, this first doping ring 31 is by mild for the vague and general curve distribution contributing to resulting from this drift layer 11, reduce the distribution of electric field, and improve the ability of this silicon carbide power element antagonism breakdown voltage.
Such as refer to shown in Fig. 2, for first embodiment of the invention compares the breakdown voltage schematic diagram of known power element, the structure of first embodiment of the invention and this known power element is compared, difference is that the terminal structure 30 of the first embodiment has this first doping ring 31, the terminal structure 30 of this known power element all uses the guard ring of this second doping ring 32 similar, as can be known from Fig. 2, the breakdown voltage of the electrical curve X of this known power element is about 1070 volts, the breakdown voltage of the electrical curve Y of the first embodiment is about 1471 volts, first embodiment and this known power element are compared, breakdown voltage about promotes 400 volts.
Refer to shown in Fig. 3, for the structural representation of second embodiment of the invention, in a second embodiment, compare with the first embodiment, it is characterized in that this first doping ring 31a has the first doping width that is greater than this second doping ring 32, and this terminal structure 30 also comprises at least one subring 33, one the 3rd doping content of this subring 33 is between 1E18 to 5E19cm
-3between, and the position arranged is overlapping with this first ring 31a that adulterates, this subring 33 is compared with this first ring 31a that adulterates, there is less the 3rd doping depth, larger the 3rd doping content and a 3rd less doping width, moreover, this impure well 34 also comprises one first impure well 341 and a position second impure well 342 overlapping with this first impure well 341, and this first impure well 341 is compared this second impure well 342 and had a less doping depth and a larger doping content.Accordingly, the second embodiment, by the setting of this subring 33, in order to bear less voltage drop, is shared comparatively uniform electric field, is made this silicon carbide power element can have higher breakdown voltage.
Refer to shown in Fig. 4, for the structural representation of third embodiment of the invention, in the third embodiment, compare with the second embodiment, it is characterized in that this first doping ring 31b has this little the first doping width of comparatively this subring 33, further, this first doping width is also less than one second doping width of this second doping ring 32.Setting so, this first doping ring 31b can be avoided when carrying out the high energy dopant compared with deep layer, and this first doping ring 31b produces the possibility of touching each other, and avoids the situation therefore causing the uniformity of breakdown voltage not good to occur.
Refer to shown in Fig. 5, for the structural representation of fourth embodiment of the invention, in the fourth embodiment, compare with the first embodiment, it is characterized in that except this impure well 34 comprises this first impure well 341 and this second impure well 342,3rd doping width of this subring 33 of this terminal structure 30 is identical with this first adulterate this first width that adulterates of ring 31, and has the ability that this silicon carbide power element of raising resists breakdown voltage equally.
Refer to shown in Fig. 6, for the structural representation of fifth embodiment of the invention, in the 5th embodiment, compare with the first embodiment, it is characterized in that this first doping ring 31 has multiple, at a distance of at least one first distance S1 between this first doping ring 31, this the second doping ring 32 also has multiple, at a distance of at least one second distance S2 being greater than this first distance S1 between this second doping ring 32, adjacent this first doping ring 31 and this second adulterate between ring 32, then be greater than this first distance S1 at a distance of one and be less than the 3rd distance S3 of this second distance S2, and, further, in the present embodiment, this first distance S1 and this second distance S2 also increases gradually along with away from this power component structure 20, such as this first distance S1 can be respectively 1.5um, 1.6um, 1.7um, 1.8um, 3rd distance S3 can be 1.9um, this second distance S2 can be 2.0um, 2.1um, 2.5um, accordingly, more uniform Electric Field Distribution can be formed in this drift layer 11, also the breakdown voltage of this silicon carbide power element can be improved.
In sum, because the present invention does not need additionally to arrange this resilient coating, by this first doping ring, there is this first doping content being less than this second doping ring and this first doping depth being greater than this second doping ring, the ability that this terminal structure resists this breakdown voltage can be increased, to improve the reliability of this silicon carbide power element, and reduce the manufacturing cost of this silicon carbide power element, moreover, the present invention also arranges this subring, and by adjusting this subring and this first to adulterate this first doping content between ring and the 3rd doping content, this the first doping width and the 3rd adulterates the collocation of width and this first doping depth and the 3rd doping depth, increase the breakdown voltage of this silicon carbide power element, in addition, the present invention also can utilize this first distance, the displacement of this second distance and the 3rd distance is from design, Electric Field Distribution evenly in this drift layer, to reach the effect of the breakdown voltage promoting this silicon carbide power element.
Below the present invention is described in detail, but as described above, be only of the present invention and preferably execute example, when not limiting scope of the invention process.Namely all equalizations done according to the present patent application scope change and modify, and all should still belong in claims of the present invention.
Claims (12)
1. a silicon carbide power element, is characterized in that, described silicon carbide power element includes:
One silicon carbide substrate with a drift layer, described drift layer has one first conductivity and described drift layer includes an active area and around the terminal area of described active area;
One is arranged at the power component structure in described active area; And
One to be arranged on described terminal area and to have the terminal structure of second conductivity different with described first conductivity, and described terminal structure includes at least one outside around described power component structure and adjacent with described power component structure first to adulterate ring and at least onely to adulterate ring around described first second of the ring that adulterates;
Wherein, described first doping ring has less first doping content and a first larger doping depth compared to described second doping ring.
2. silicon carbide power element according to claim 1, is characterized in that, described silicon carbide power element also comprises at least one impure well being arranged at the below of described power component structure, and described impure well has described second conductivity.
3. silicon carbide power element according to claim 2, it is characterized in that, described impure well comprises one first impure well and a position second impure well overlapping with described first impure well, and described first impure well has a less doping depth and a larger doping content compared to described second impure well.
4. silicon carbide power element according to claim 1, is characterized in that, described first doping ring has a first less doping width compared to described second doping ring.
5. silicon carbide power element according to claim 1, it is characterized in that, described terminal structure also comprises at least one and described first and to adulterate the overlapping subring of ring, and described subring has less the 3rd doping depth, larger the 3rd doping content and a 3rd larger doping width compared to described first doping ring.
6. silicon carbide power element according to claim 1, is characterized in that, described first doping ring has a first larger doping width compared to described second doping ring.
7. silicon carbide power element according to claim 1, it is characterized in that, described terminal structure also comprises at least one and described first and to adulterate the overlapping subring of ring, and described subring has less the 3rd doping depth, larger the 3rd doping content and a 3rd less doping width compared to described first doping ring.
8. silicon carbide power element according to claim 1, it is characterized in that, described terminal structure also comprises at least one and described first and to adulterate the overlapping subring of ring, and described subring has less the 3rd doping depth, larger the 3rd doping content and a 3rd identical doping width compared to described first doping ring.
9. silicon carbide power element according to claim 1, it is characterized in that, there is multiple described first doping ring, at a distance of at least one first distance between described first doping ring, there is multiple described second doping ring, at a distance of at least one second distance between described second doping ring, described second distance is greater than described first distance.
10. silicon carbide power element according to claim 9, is characterized in that, adjacent described first doping ring and described second adulterates at a distance of one the 3rd distance between ring, and described 3rd distance is greater than described first distance and is less than described second distance.
11. silicon carbide power elements according to claim 9, is characterized in that, have multiple described first distance, and described first distance is along with sequentially cumulative away from described power component structure.
12. silicon carbide power elements according to claim 9, is characterized in that, have multiple described second distance, and described second distance is along with sequentially cumulative away from described power component structure.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410027152.0A CN104795435B (en) | 2014-01-21 | 2014-01-21 | Silicon carbide power element |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201410027152.0A CN104795435B (en) | 2014-01-21 | 2014-01-21 | Silicon carbide power element |
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| Publication Number | Publication Date |
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| CN104795435A true CN104795435A (en) | 2015-07-22 |
| CN104795435B CN104795435B (en) | 2017-11-24 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110534559A (en) * | 2019-09-03 | 2019-12-03 | 深圳第三代半导体研究院 | A kind of sic semiconductor device terminal and its manufacturing method |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060043480A1 (en) * | 2004-09-01 | 2006-03-02 | Kabushiki Kaisha Toshiba | Semiconductor device and fabrication method of the same |
| US20120205666A1 (en) * | 2011-02-10 | 2012-08-16 | Jason Henning | Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same |
| CN102856356A (en) * | 2012-09-28 | 2013-01-02 | 中国科学院微电子研究所 | Terminal for semiconductor power device |
| CN103489910A (en) * | 2013-09-17 | 2014-01-01 | 电子科技大学 | Power semiconductor device and manufacturing method thereof |
-
2014
- 2014-01-21 CN CN201410027152.0A patent/CN104795435B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060043480A1 (en) * | 2004-09-01 | 2006-03-02 | Kabushiki Kaisha Toshiba | Semiconductor device and fabrication method of the same |
| US20120205666A1 (en) * | 2011-02-10 | 2012-08-16 | Jason Henning | Junction termination structures including guard ring extensions and methods of fabricating electronic devices incorporating same |
| CN102856356A (en) * | 2012-09-28 | 2013-01-02 | 中国科学院微电子研究所 | Terminal for semiconductor power device |
| CN103489910A (en) * | 2013-09-17 | 2014-01-01 | 电子科技大学 | Power semiconductor device and manufacturing method thereof |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110534559A (en) * | 2019-09-03 | 2019-12-03 | 深圳第三代半导体研究院 | A kind of sic semiconductor device terminal and its manufacturing method |
| CN110534559B (en) * | 2019-09-03 | 2021-07-20 | 深圳第三代半导体研究院 | Silicon carbide semiconductor device terminal and manufacturing method thereof |
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| CN104795435B (en) | 2017-11-24 |
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Effective date of registration: 20200617 Address after: Room 1225, area B, 12 / F, block B, Lane 2855, Huqingping highway, Qingpu District, Shanghai Patentee after: Shanghai hanqian Technology Co.,Ltd. Address before: 5 / F 6 / F, 18 Puding Road, Hsinchu, Taiwan, China Patentee before: HESTIA POWER Inc. |
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Application publication date: 20150722 Assignee: Shanghai hanxinzuo Technology Development Co.,Ltd. Assignor: Shanghai hanqian Technology Co.,Ltd. Contract record no.: X2024980004839 Denomination of invention: Silicon carbide power components Granted publication date: 20171124 License type: Common License Record date: 20240424 |
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