CN104779157A - 一种场阻型igbt的制备方法 - Google Patents
一种场阻型igbt的制备方法 Download PDFInfo
- Publication number
- CN104779157A CN104779157A CN201410304747.6A CN201410304747A CN104779157A CN 104779157 A CN104779157 A CN 104779157A CN 201410304747 A CN201410304747 A CN 201410304747A CN 104779157 A CN104779157 A CN 104779157A
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- China
- Prior art keywords
- wafer
- layer
- field resistance
- porous silicon
- preparation
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 4
- 229910021426 porous silicon Inorganic materials 0.000 claims abstract description 37
- 230000003647 oxidation Effects 0.000 claims abstract description 7
- 238000007254 oxidation reaction Methods 0.000 claims abstract description 7
- 238000003754 machining Methods 0.000 claims abstract description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 33
- 238000000034 method Methods 0.000 claims description 31
- 238000002360 preparation method Methods 0.000 claims description 20
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 claims description 16
- 238000000151 deposition Methods 0.000 claims description 10
- 230000008021 deposition Effects 0.000 claims description 10
- 238000005530 etching Methods 0.000 claims description 10
- 238000001465 metallisation Methods 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 238000002161 passivation Methods 0.000 claims description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 5
- 229920005591 polysilicon Polymers 0.000 claims description 5
- 239000000126 substance Substances 0.000 claims description 4
- 239000012535 impurity Substances 0.000 claims description 3
- 238000005260 corrosion Methods 0.000 claims description 2
- 230000007797 corrosion Effects 0.000 claims description 2
- 238000002513 implantation Methods 0.000 claims description 2
- 238000007517 polishing process Methods 0.000 claims description 2
- 238000003672 processing method Methods 0.000 claims description 2
- 238000000407 epitaxy Methods 0.000 abstract description 7
- 238000002347 injection Methods 0.000 abstract description 7
- 239000007924 injection Substances 0.000 abstract description 7
- 150000002500 ions Chemical class 0.000 description 11
- 239000000463 material Substances 0.000 description 4
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 3
- 238000007796 conventional method Methods 0.000 description 3
- 230000005684 electric field Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 238000005498 polishing Methods 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- 238000005468 ion implantation Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000000137 annealing Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 238000005224 laser annealing Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Weting (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Element Separation (AREA)
Abstract
Description
Claims (8)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410304747.6A CN104779157B (zh) | 2014-06-28 | 2014-06-28 | 一种场阻型igbt的制备方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201410304747.6A CN104779157B (zh) | 2014-06-28 | 2014-06-28 | 一种场阻型igbt的制备方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104779157A true CN104779157A (zh) | 2015-07-15 |
CN104779157B CN104779157B (zh) | 2019-06-21 |
Family
ID=53620566
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410304747.6A Active CN104779157B (zh) | 2014-06-28 | 2014-06-28 | 一种场阻型igbt的制备方法 |
Country Status (1)
Country | Link |
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CN (1) | CN104779157B (zh) |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002261281A (ja) * | 2001-03-01 | 2002-09-13 | Hitachi Ltd | 絶縁ゲートバイポーラトランジスタの製造方法 |
JP2011249643A (ja) * | 2010-05-28 | 2011-12-08 | Bondtech Inc | 接合方法および接合システム |
CN103137474A (zh) * | 2011-12-02 | 2013-06-05 | 上海华虹Nec电子有限公司 | 以贴片方式制造场终止型igbt器件的方法 |
-
2014
- 2014-06-28 CN CN201410304747.6A patent/CN104779157B/zh active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002261281A (ja) * | 2001-03-01 | 2002-09-13 | Hitachi Ltd | 絶縁ゲートバイポーラトランジスタの製造方法 |
JP2011249643A (ja) * | 2010-05-28 | 2011-12-08 | Bondtech Inc | 接合方法および接合システム |
CN103137474A (zh) * | 2011-12-02 | 2013-06-05 | 上海华虹Nec电子有限公司 | 以贴片方式制造场终止型igbt器件的方法 |
Also Published As
Publication number | Publication date |
---|---|
CN104779157B (zh) | 2019-06-21 |
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Legal Events
Date | Code | Title | Description |
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C06 | Publication | ||
PB01 | Publication | ||
C10 | Entry into substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20190122 Address after: No. 88 Tangfu Road, Fengxian District, Shanghai, 201405 Applicant after: SHANGHAI STN ELECTROMECHANICAL EQUIPMENT Co.,Ltd. Address before: Room 526, 33 blocks, 680 Guiping Road, Xuhui District, Shanghai, 2003 Applicant before: SHANGHAI HEJUNCHI SEMICONDUCTOR CO.,LTD. |
|
TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP03 | Change of name, title or address |
Address after: 201405 Room 101, 88 Tong Fu Road, Fengxian District, Shanghai. Patentee after: Shanghai Tiniu Technology Co.,Ltd. Address before: No. 88 Tangfu Road, Fengxian District, Shanghai, 201405 Patentee before: SHANGHAI STN ELECTROMECHANICAL EQUIPMENT Co.,Ltd. |
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CP03 | Change of name, title or address |