CN104769683B - 导电膏组合物及由其制成的半导体器件 - Google Patents

导电膏组合物及由其制成的半导体器件 Download PDF

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Publication number
CN104769683B
CN104769683B CN201380057732.8A CN201380057732A CN104769683B CN 104769683 B CN104769683 B CN 104769683B CN 201380057732 A CN201380057732 A CN 201380057732A CN 104769683 B CN104769683 B CN 104769683B
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China
Prior art keywords
oxide
paste composition
earth metal
substrate
paste
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CN201380057732.8A
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English (en)
Chinese (zh)
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CN104769683A (zh
Inventor
Z·R·李
K·R·米克斯卡
D·H·罗奇
C·托拉迪
P·D·韦尔努伊
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Sun Paster Co ltd
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EI Du Pont de Nemours and Co
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    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09D—COATING COMPOSITIONS, e.g. PAINTS, VARNISHES OR LACQUERS; FILLING PASTES; CHEMICAL PAINT OR INK REMOVERS; INKS; CORRECTING FLUIDS; WOODSTAINS; PASTES OR SOLIDS FOR COLOURING OR PRINTING; USE OF MATERIALS THEREFOR
    • C09D5/00—Coating compositions, e.g. paints, varnishes or lacquers, characterised by their physical nature or the effects produced; Filling pastes
    • C09D5/24—Electrically-conducting paints
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/04—Glass compositions containing silica
    • C03C3/062—Glass compositions containing silica with less than 40% silica by weight
    • C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/12—Silica-free oxide glass compositions
    • C03C3/14—Silica-free oxide glass compositions containing boron
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C3/00—Glass compositions
    • C03C3/12—Silica-free oxide glass compositions
    • C03C3/14—Silica-free oxide glass compositions containing boron
    • C03C3/15—Silica-free oxide glass compositions containing boron containing rare earths
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/02—Frit compositions, i.e. in a powdered or comminuted form
    • C03C8/04—Frit compositions, i.e. in a powdered or comminuted form containing zinc
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C8/00—Enamels; Glazes; Fusion seal compositions being frit compositions having non-frit additions
    • C03C8/14—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions
    • C03C8/18—Glass frit mixtures having non-frit additions, e.g. opacifiers, colorants, mill-additions containing free metals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/02—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors mainly consisting of metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/10—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern
    • H05K3/12—Apparatus or processes for manufacturing printed circuits in which conductive material is applied to the insulating support in such a manner as to form the desired conductive pattern using thick film techniques, e.g. printing techniques to apply the conductive material or similar techniques for applying conductive paste or ink patterns
    • H05K3/1283—After-treatment of the printed patterns, e.g. sintering or curing methods
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/206—Electrodes for devices having potential barriers
    • H10F77/211—Electrodes for devices having potential barriers for photovoltaic cells
    • H10F77/219—Arrangements for electrodes of back-contact photovoltaic cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
    • Y10T29/00—Metal working
    • Y10T29/49—Method of mechanical manufacture
    • Y10T29/49002—Electrical device making
    • Y10T29/49117—Conductor or circuit manufacturing
    • Y10T29/49124—On flat or curved insulated base, e.g., printed circuit, etc.
    • Y10T29/49155—Manufacturing circuit on or in base
    • Y10T29/49163—Manufacturing circuit on or in base with sintering of base

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Physics & Mathematics (AREA)
  • Dispersion Chemistry (AREA)
  • Wood Science & Technology (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Photovoltaic Devices (AREA)
  • Conductive Materials (AREA)
  • Sustainable Development (AREA)
  • Sustainable Energy (AREA)
CN201380057732.8A 2012-09-06 2013-09-04 导电膏组合物及由其制成的半导体器件 Active CN104769683B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261697463P 2012-09-06 2012-09-06
US61/697,463 2012-09-06
PCT/US2013/057900 WO2014039462A2 (en) 2012-09-06 2013-09-04 Conductive paste composition and semiconductor devices made therewith

Publications (2)

Publication Number Publication Date
CN104769683A CN104769683A (zh) 2015-07-08
CN104769683B true CN104769683B (zh) 2017-07-04

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201380057732.8A Active CN104769683B (zh) 2012-09-06 2013-09-04 导电膏组合物及由其制成的半导体器件

Country Status (5)

Country Link
US (2) US8900488B2 (enExample)
JP (1) JP2015532776A (enExample)
CN (1) CN104769683B (enExample)
DE (1) DE112013004373T5 (enExample)
WO (1) WO2014039462A2 (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2787510B1 (en) * 2013-04-02 2018-05-30 Heraeus Deutschland GmbH & Co. KG Particles comprising Al, Si and Mg in electro-conductive pastes and solar cell preparation
KR101696985B1 (ko) * 2014-12-30 2017-01-17 삼성에스디아이 주식회사 태양전지 전극　형성용 조성물 및 이로부터 제조된 전극
KR20160082468A (ko) * 2014-12-31 2016-07-08 헤레우스 프레셔스 메탈즈 노스 아메리카 콘쇼호켄 엘엘씨 전기전도성 페이스트 조성물용 유리 조성물
GB201520077D0 (en) * 2015-11-13 2015-12-30 Johnson Matthey Plc Conductive track or coating
KR20170108577A (ko) * 2016-03-18 2017-09-27 대주전자재료 주식회사 태양전지용 무연 도전 페이스트
CN106449895B (zh) * 2016-12-16 2017-12-29 浙江晶科能源有限公司 一种perc电池正面减反膜的制备方法
US10804003B2 (en) * 2017-10-03 2020-10-13 Shoei Chemical Inc. Conductive paste for forming solar cell electrode
KR20190112543A (ko) * 2018-03-26 2019-10-07 삼성에스디아이 주식회사 태양전지 전극 형성용 조성물 및 이로부터 제조된 전극
CN110586929A (zh) * 2019-09-23 2019-12-20 西安汇创贵金属新材料研究院有限公司 一种适于制备球形微米银粉的辅助试剂
CN114409248B (zh) * 2022-01-06 2023-04-07 江苏日御光伏新材料科技有限公司 一种低热损的碲-锂-硅-锆体系玻璃料及其导电浆料与应用

Citations (5)

* Cited by examiner, † Cited by third party
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CN1687992A (zh) * 2005-05-13 2005-10-26 范琳 一种无铅银电极浆料及其制造方法
CN1881621A (zh) * 2005-06-07 2006-12-20 E.I.内穆尔杜邦公司 铝厚膜组合物、电极、半导体器件及其制造方法
CN101164943A (zh) * 2006-10-19 2008-04-23 北京印刷学院 一种用作电子浆料组成中粘接相的无铅碲酸盐低熔玻璃
WO2012083291A1 (en) * 2010-12-17 2012-06-21 E. I. Du Pont De Nemours And Company Conductive paste composition containing lithium, and articles made therefrom
WO2012116052A1 (en) * 2011-02-22 2012-08-30 E. I. Du Pont De Nemours And Company Conductive paste composition and semiconductor devices made therewith

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US5066621A (en) * 1990-06-21 1991-11-19 Johnson Matthey Inc. Sealing glass composition and electrically conductive formulation containing same
US7494607B2 (en) 2005-04-14 2009-02-24 E.I. Du Pont De Nemours And Company Electroconductive thick film composition(s), electrode(s), and semiconductor device(s) formed therefrom
US7771623B2 (en) 2005-06-07 2010-08-10 E.I. du Pont de Nemours and Company Dupont (UK) Limited Aluminum thick film composition(s), electrode(s), semiconductor device(s) and methods of making thereof
KR101225909B1 (ko) 2008-08-07 2013-01-24 교토 에렉스 가부시키가이샤 태양전지소자의 전극형성용 도전성 페이스트, 태양전지소자 및 그 태양전지소자의 제조방법
WO2010123967A2 (en) 2009-04-22 2010-10-28 E. I. Du Pont De Nemours And Company Glass compositions used in conductors for photovoltaic cells
TWI498308B (zh) * 2010-05-04 2015-09-01 杜邦股份有限公司 含有鉛-碲-鋰-鈦-氧化物之厚膜膏及其在半導體裝置之製造中的用途
JP2014028740A (ja) * 2012-04-17 2014-02-13 Heraeus Precious Metals North America Conshohocken Llc 太陽電池接点用導電性厚膜ペーストのためのテルル無機反応系

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1687992A (zh) * 2005-05-13 2005-10-26 范琳 一种无铅银电极浆料及其制造方法
CN1881621A (zh) * 2005-06-07 2006-12-20 E.I.内穆尔杜邦公司 铝厚膜组合物、电极、半导体器件及其制造方法
CN101164943A (zh) * 2006-10-19 2008-04-23 北京印刷学院 一种用作电子浆料组成中粘接相的无铅碲酸盐低熔玻璃
WO2012083291A1 (en) * 2010-12-17 2012-06-21 E. I. Du Pont De Nemours And Company Conductive paste composition containing lithium, and articles made therefrom
WO2012116052A1 (en) * 2011-02-22 2012-08-30 E. I. Du Pont De Nemours And Company Conductive paste composition and semiconductor devices made therewith

Also Published As

Publication number Publication date
US9284459B2 (en) 2016-03-15
WO2014039462A3 (en) 2014-05-01
US20150068598A1 (en) 2015-03-12
DE112013004373T5 (de) 2015-05-28
US8900488B2 (en) 2014-12-02
WO2014039462A2 (en) 2014-03-13
JP2015532776A (ja) 2015-11-12
US20140061830A1 (en) 2014-03-06
CN104769683A (zh) 2015-07-08

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Effective date of registration: 20201224

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Effective date of registration: 20210423

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Patentee after: Sun paster Co.,Ltd.

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Patentee before: DuPont Electronics

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Application publication date: 20150708

Assignee: Jiangsu SOTE Electronic Material Co.,Ltd.

Assignor: Sun paster Co.,Ltd.

Contract record no.: X2021990000521

Denomination of invention: Conductive paste composition and semiconductor device made thereof

Granted publication date: 20170704

License type: Common License

Record date: 20210826