CN104766893B - A kind of thin film transistor (TFT) and preparation method thereof - Google Patents
A kind of thin film transistor (TFT) and preparation method thereof Download PDFInfo
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- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 230000005611 electricity Effects 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical group [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
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- 229910052737 gold Inorganic materials 0.000 claims description 2
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- 239000001267 polyvinylpyrrolidone Substances 0.000 claims description 2
- 235000013855 polyvinylpyrrolidone Nutrition 0.000 claims description 2
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- 238000012546 transfer Methods 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical group [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
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- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 1
- JTCFNJXQEFODHE-UHFFFAOYSA-N [Ca].[Ti] Chemical compound [Ca].[Ti] JTCFNJXQEFODHE-UHFFFAOYSA-N 0.000 description 1
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- RKTYLMNFRDHKIL-UHFFFAOYSA-N copper;5,10,15,20-tetraphenylporphyrin-22,24-diide Chemical compound [Cu+2].C1=CC(C(=C2C=CC([N-]2)=C(C=2C=CC=CC=2)C=2C=CC(N=2)=C(C=2C=CC=CC=2)C2=CC=C3[N-]2)C=2C=CC=CC=2)=NC1=C3C1=CC=CC=C1 RKTYLMNFRDHKIL-UHFFFAOYSA-N 0.000 description 1
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- 125000005843 halogen group Chemical group 0.000 description 1
- VKYKSIONXSXAKP-UHFFFAOYSA-N hexamethylenetetramine Chemical compound C1N(C2)CN3CN1CN2C3 VKYKSIONXSXAKP-UHFFFAOYSA-N 0.000 description 1
- 230000003993 interaction Effects 0.000 description 1
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- 229910001507 metal halide Inorganic materials 0.000 description 1
- 150000005309 metal halides Chemical class 0.000 description 1
- 125000000250 methylamino group Chemical group [H]N(*)C([H])([H])[H] 0.000 description 1
- LLWRXQXPJMPHLR-UHFFFAOYSA-N methylazanium;iodide Chemical compound [I-].[NH3+]C LLWRXQXPJMPHLR-UHFFFAOYSA-N 0.000 description 1
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- 229910052709 silver Inorganic materials 0.000 description 1
- 239000004332 silver Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78696—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the structure of the channel, e.g. multichannel, transverse or longitudinal shape, length or width, doping structure, or the overlap or alignment between the channel and the gate, the source or the drain, or the contacting structure of the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/26—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, elements provided for in two or more of the groups H01L29/16, H01L29/18, H01L29/20, H01L29/22, H01L29/24, e.g. alloys
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
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- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
A kind of thin film transistor (TFT), by substrate, gate electrode, gate insulation layer, active channel layer and source-drain electrode superposition form, wherein active channel layer be organic/inorganic composite perofskite film, each layer film with a thickness of：1 μm of gate electrode, gate insulation layer 200-400nm, active channel layer 200-300nm, 1 μm of source-drain electrode.It is an advantage of the invention that：Organic/inorganic composite perofskite material is used for the active channel layer of thin film transistor (TFT) by the thin film transistor (TFT), high mobility and the organic semi-conductor for combining inorganic semiconductor are flexible, cheap, the advantages that low temperature is easily prepared, not only there is driving capability more higher than Organic Thin Film Transistors, but also have both ability that is simple, inexpensive and being easy to large area preparation on flexible substrates；Preparation method is simple and easy, is conducive to industrial applications.
Description
Technical field
The present invention relates to the technologies of preparing of thin film transistor (TFT), and in particular to a kind of thin film transistor (TFT) and preparation method thereof.
Background technique
Thin film transistor (TFT) (Thing Film Transistor (TFT)) is widely used in FPD, Electronic Paper, biography
The fields such as sensor, smart card.By the difference of its active channel layer material, thin film transistor (TFT) includes inorganic thin-film transistors and organic
Thin film transistor (TFT) two major classes.Inorganic thin-film transistors have a preferable device performance, but its preparation process relatively organically it is complicated, at
This is higher, flexibility is bad and generally requires experience high temperature preparation, inexpensive, the ultra-thin large area fast-developing at present to satisfaction
Flexible electronic device needs great difficulty, such as flexible flat panel display device, wearable device, biomedical sensor etc..
Compared with inorganic thin-film transistors, Organic Thin Film Transistors has its peculiar advantage：1) manufacturing process is simple, and spin coating, print can be used
Brush and the method for vacuum evaporation, thus it is at low cost, and can process at room temperature, this allows to be deposited directly to plastic supporting base
On；2) flexibility is good, carries out appropriate distortion or bending, and the photoelectric characteristic of device does not change significantly；3) range of material
Extensively；4) transparency is good.Therefore, Organic Thin Film Transistors is in the field for needing inexpensive, ultra-thin, large area flexible electronic device
It has a wide range of applications, causes the attention of more and more famous major companies and scientific research institution.But its low current-carrying
Transport factor (generally less than 1cm2/Vs) is always the problem of organic tft.Though currently, it has been reported that the mobility of monocrystalline OTFT
Up to 5cm2/Vs-10cm2/Vs, but realization is highly difficult, also rarely found.The low mobility of organic semiconductor makes it be difficult to meet height
The driving requirement of fast device, seriously constrains the application in high performance electronics.It is therefore desirable to which one kind can be as inorganic
The driving requirement that TFT meets high performance device like for preparing energy simultaneously with large area in machine TFT low cost flexible substrate again
The novel field-effect material and its thin film transistor (TFT) of power.In recent years, certain organic/inorganic composite perovskite materials, such as iodine
Change lead methylamine etc. to have obtained good application in solar cell and achieved rapid development.Organic/inorganic composite calcium titanium
Mine solar cell was reported in first time in 2009, and efficiency at that time only has 3.8%, but then promoted speed and rise sharply, newest report
Road is more than 20%.Its development at full speed will be attributed to the fact that core-organic/inorganic composite perofskite type of this solar cell
Light absorbent, this material are usually organic metal halide such as the lead iodide methylamine and stannic iodide first with perovskite crystal form
Amine etc..In this perovskite ABX3 structure, A is methylamino, and B is metallic atom (generally lead and tin), and X is chlorine, bromine, iodine etc.
Halogen atom.
Probe into the reason of why this organic/inorganic composite perofskite type solar cell can obtain superperformance, a side
Face is that the absorption to visible light and part near infrared light may be implemented in this organic/inorganic composite perovskite material, improves
Absorptivity, another more important reason are：This organic/inorganic composite perovskite material has longer up to 1 μm
Carrier diffusion length, it is more much bigger than organic semiconductor (10-80nm).Even more noteworthy, hole and electronics have
Similar diffusion length, therefore, the quick separating of photo-generated carrier will reduce compound, and energy loss is small, will not generate space electricity
Lotus limits photoelectric current, this is exactly that organic/inorganic composite perofskite type solar battery can be realized efficient major reason.By
In the recent period to several perovskite material Mobility measurements studies have shown that it has almost up to tens to up to a hundred centimetres side/webers
Hall coefficient, and these performances are exactly required for the channel layer of high performance thin film transistor active.Therefore it is it is believed that this suitable
Organic/inorganic composite perovskite material for solar cell should also can be high property required for high performance thin film transistor
It can active channel material.
Organic/inorganic composite perofskite material is used for the channel layer in thin film transistor (TFT) by the present invention, using its it is inorganic at
Divide and the basic framework of mixture is constituted to provide the carrier of high mobility by strong covalent bond or ionic bond interaction；
Organic principle then makes the material have molecular self-assembling ability, can dissolve at room temperature as polymer material, while being also
The free movement of carrier provides molecular orbit.Therefore, the film crystal of this novel organic/inorganic composite perofskite channel
Pipe should not only carrier mobility with higher, but also can be with spin coating, printing, vacuum evaporation as Organic Thin Film Transistors
It is prepared Deng simple, low cost, the mode of low temperature, to have the direct preparative capacibility of large area in flexible substrate.It is this novel
Thin film transistor (TFT) will have broad application prospects in FPD, sensor, smart card and flexible electronic device.
Summary of the invention
The purpose of the present invention is a kind of thin film transistor (TFT) and preparation method thereof, the film there are problem, are provided for above-mentioned
Transistor is using organic/inorganic composite perofskite film as active channel layer, carrier mobility with higher, and can be as organic
Thin film transistor (TFT) can be prepared in a manner of, low cost simple by spin coating, printing, vacuum evaporation etc., low temperature like that, to have flexibility
The direct preparative capacibility of large area on substrate.
Technical solution of the present invention：
A kind of thin film transistor (TFT) is made of the superposition of substrate, gate electrode, gate insulation layer, active channel layer and source-drain electrode,
Middle active channel layer be organic/inorganic composite perofskite film, each layer film with a thickness of：1 μm of gate electrode, gate insulation layer 200-
400nm, active channel layer 200-300nm, 1 μm of source-drain electrode.
A kind of preparation method of the thin film transistor (TFT), steps are as follows：
1) grid are prepared using litho pattern method, spin-coating method or print process after the direct vapour deposition method of mask plate, vapor deposition on substrate
Electrode；
2) gate insulation layer is prepared using spin-coating method on the above-mentioned substrate for preparing gate electrode, spincoating conditions are：2000-
Then 4000r/min, 30-40s anneal 1-3 hours at a temperature of 50-100 DEG C；
3) use spin-coating method spin coating organic/inorganic composite perofskite film as active channel layer, rotation on gate insulation layer
Painting condition is：3000-6000r/min, 25-40s, then anneal at a temperature of 50-100 DEG C 45-90min；
4) source-drain electrode is prepared on above-mentioned active channel layer.
The substrate is glass or monocrystalline silicon piece；Gate electrode is ITO or FTO；Gate insulator layer material is silicon nitride, oxidation
Silicon, polyvinylpyrrolidone, polymethyl methacrylate or polyvinyl alcohol；Active channel layer is CH3NH3PbI3、CH3NH3PbI3– xClxOr CH3NH3SnI3；Source-drain electrode is gold, aluminium or Ag films.
Organic/inorganic composite perofskite material is applied to thin film transistor channel layer, passes through device architecture, process flow
Design, it is expected that a kind of high performance thin film transistor for being able to satisfy high speed device driving and requiring is obtained, while but also with simple, low
The direct preparative capacibility of large area in cost and flexible substrate.This novel thin film transistor (TFT) will FPD, sensor,
Have broad application prospects in smart card and flexible electronic device.
It is an advantage of the invention that：Organic/inorganic composite perofskite material is used for thin film transistor (TFT) by the thin film transistor (TFT)
Active channel layer, combines that high mobility and the organic semi-conductor of inorganic semiconductor are flexible, cheap, and it is excellent that low temperature is easily prepared etc.
Point not only has driving capability more higher than Organic Thin Film Transistors, but also has both simple, inexpensive and be easy in flexible substrate
On large area preparation ability；Preparation method is simple and easy, is conducive to industrial applications.
Detailed description of the invention
Fig. 1 is CH3NH3PbI3The XRD diagram of film.
Fig. 2 is the CH of preparation3NH3PbI3For transfer characteristic curve (Vds=-5v and the Vds of the thin film transistor (TFT) of channel layer
=-20v).
Specific embodiment
Preparation method and products application of the invention are described in detail below with reference to example.
Embodiment：
A kind of thin film transistor (TFT) is made of the superposition of substrate, gate electrode, gate insulation layer, active channel layer and source-drain electrode,
Middle active channel layer be organic/inorganic composite perofskite film, each layer film with a thickness of：1 μm of gate electrode, gate insulation layer
260nm, active channel layer 200nm, 1 μm of source-drain electrode；Its preparation step is as follows：
1) ITO gate electrode is prepared using the direct vapour deposition method of mask plate on a glass substrate, process conditions are：Pressure 1 × 10- 3Pa, electric current 100mA, evaporation time 10min；
2) PMMA gate insulation layer is prepared using spin-coating method in the above-mentioned glass substrate for preparing gate electrode, spincoating conditions are：
Then revolution 2000r/min, spin-coating time 30s anneal 1 hour at a temperature of 100 DEG C；
3) spin-coating method spin coating CH is used on gate insulation layer3NH3PbI3Film is as active channel layer, spincoating conditions：Turn
Number 3000r/min, spin-coating time 25s, then anneal 1 hour at a temperature of 100 DEG C；
Fig. 1 is CH3NH3PbI3The XRD diagram of film, it is visible in figure apparent crystallization peak occur, and respectively 2 θ=
It is corresponding at 13.98 °, 28.32 °, 31.74 ° (110), (220) and (310) three main crystal orientation occur, show the tetragonal of material
Body perovskite structure and good crystallization situation, are tentatively prepared for CH3NH3PbI3The TFT device of channel layer；
4) using mask plate vacuum evaporation silver on above-mentioned active channel layer, vacuum evaporation condition is：Pressure 1 × 10-3pa、
Electric current 100mA, vapor deposition 10min prepare source-drain electrode.
Fig. 2 is the CH of preparation3NH3PbI3For transfer characteristic curve (Vds=-5v and the Vds of the thin film transistor (TFT) of channel layer
=-20v), show in figure：Channel current increases with the increase being biased and tends to be saturated, when Vds=-5V, cut-in voltage
About -0.5V, on-off ratio 104, show apparent field-effect feature.
Claims (3)
1. a kind of thin film transistor (TFT), it is characterised in that：It is folded by substrate, gate electrode, gate insulation layer, active channel layer and source-drain electrode
Add composition, wherein active channel layer be organic/inorganic composite perofskite film, each layer film with a thickness of：1 μm of gate electrode, grid
Insulating layer 200-400nm, active channel layer 200-300nm, 1 μm of source-drain electrode；The organic/inorganic composite perofskite film is
CH3NH3PbI3, CH3NH3PbI3With apparent crystallization peak, and correspond at 2 θ=13.98 °, 28.32 °, 31.74 ° respectively
Existing (110), (220) and (310) three main crystal orientation.
2. a kind of preparation method of thin film transistor (TFT) as described in claim 1, it is characterised in that steps are as follows：
1) grid electricity is prepared using litho pattern method, spin-coating method or print process after the direct vapour deposition method of mask plate, vapor deposition on substrate
Pole；
2) gate insulation layer is prepared using spin-coating method on the above-mentioned substrate for preparing gate electrode, spincoating conditions are： 2000-4000r/
Then min, 30-40s anneal 1-3 hours at a temperature of 50-100 DEG C；
3) use spin-coating method spin coating organic/inorganic composite perofskite film as active channel layer on gate insulation layer, it is described to have
Machine/inorganic compounding perovskite thin film is CH3NH3PbI3, CH3NH3PbI3With apparent crystallization peak, and respectively 2 θ=
Corresponding appearance (110), (220) and (310) three main crystal orientation, spincoating conditions are at 13.98 °, 28.32 °, 31.74 °：3000-
6000r/min, 25-40s, then anneal at a temperature of 50-100 DEG C 45-90min；
4) source-drain electrode is prepared on above-mentioned active channel layer.
3. the preparation method of thin film transistor (TFT) described in claim 2, it is characterised in that：The substrate is glass or monocrystalline silicon piece；
Gate electrode is ITO or FTO；Gate insulator layer material is silicon nitride, silica, polyvinylpyrrolidone, polymethyl methacrylate
Or polyvinyl alcohol；Active channel layer is CH3NH3PbI3；Source-drain electrode is gold, aluminium or Ag films.
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| CN108807672B (en) * | 2017-04-28 | 2020-03-17 | 清华大学 | Organic thin film transistor and method for manufacturing the same |
| CN108023019B (en) * | 2017-12-19 | 2024-01-02 | 北京大学深圳研究生院 | Perovskite phototransistor and preparation method thereof |
| CN109767989A (en) * | 2018-12-25 | 2019-05-17 | 西交利物浦大学 | Thin film transistor (TFT) of flexible substrate and preparation method thereof |
| CN109962113A (en) * | 2019-03-28 | 2019-07-02 | 京东方科技集团股份有限公司 | A kind of thin film transistor (TFT), array substrate and preparation method thereof and display panel |
| CN113130767A (en) * | 2021-04-16 | 2021-07-16 | 南开大学 | Mixed-dimension composite perovskite thin film, preparation method and application thereof, and photosensitive thin film transistor |
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| US6344662B1 (en) * | 1997-03-25 | 2002-02-05 | International Business Machines Corporation | Thin-film field-effect transistor with organic-inorganic hybrid semiconductor requiring low operating voltages |
| US6180956B1 (en) * | 1999-03-03 | 2001-01-30 | International Business Machine Corp. | Thin film transistors with organic-inorganic hybrid materials as semiconducting channels |
| US7105360B2 (en) * | 2002-03-08 | 2006-09-12 | International Business Machines Corporation | Low temperature melt-processing of organic-inorganic hybrid |
| CN100508215C (en) * | 2007-08-21 | 2009-07-01 | 友达光电股份有限公司 | Thin-film transistor, pixel structure and LCD panel |
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2015
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