CN100508215C - Thin-film transistor, pixel structure and LCD panel - Google Patents
Thin-film transistor, pixel structure and LCD panel Download PDFInfo
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- CN100508215C CN100508215C CNB2007101417657A CN200710141765A CN100508215C CN 100508215 C CN100508215 C CN 100508215C CN B2007101417657 A CNB2007101417657 A CN B2007101417657A CN 200710141765 A CN200710141765 A CN 200710141765A CN 100508215 C CN100508215 C CN 100508215C
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Abstract
The present invention provides a thin film transistor, a pixel structure and a liquid crystal display panel. Wherein, the thin film transistor is arranged on a substrate and comprises a grid, a semiconductor layer, a grid insulating layer, a source electrode and a drain electrode. The grid insulating layer is positioned between the grid and the semiconductor layer. Rays show specific color after passing through the grid insulating layer. In addition, the source electrode and the drain electrode are arranged on the semiconductor layer. For the liquid crystal display panel, it is unnecessary to additionally arrange a color filter array to display multicolor images, thus simplifying liquid crystal display panel production technique and ensuring lower production cost. Besides, the present invention adopts insulating materials with functions of ray filter or ray color conversion as material of the insulating film in the thin film transistor. Therefore, rays show specific color after passing through the insulating film of the thin film transistor.
Description
Technical field
The present invention relates to a kind of thin-film transistor, dot structure and use the display panels of this thin film transistor and pixel structure, and be particularly related to a kind of display panels that has photochromic transformation or the thin-film transistor of filter action, dot structure and use this thin film transistor and pixel structure.
Background technology
In recent years along with the maturation of photoelectric technology and semiconductor fabrication, driven flat-panel screens (FlatPanel Display, FPD) flourish, wherein LCD is based on advantage such as its low voltage operating, radiationless line scattering, in light weight and volume be little, replaces traditional cathode-ray tube display more gradually and becomes the main flow of display product in recent years.
In general, the display panels in the LCD is made of image element array substrates, colorful filter array substrate and the liquid crystal layer that is sandwiched between the two substrates.In addition, other has a kind of display panels, be pel array is produced on the colorful filter array substrate (Array on color filter, AOC) or with colour filter array be formed on the image element array substrates (Color filter on array, COA).Colour filter array can provide filter action and make display panels can carry out the colouring demonstration.
Yet colour filter array and pel array need to make with different step respectively, often make the making step of display panels become complicated.Simultaneously, the making of multiple film layer also can limit the thickness of display panels, makes the thickness of display panels to reduce.In addition, if when being produced in colour filter array and pel array on the different substrates, the problem of mis-alignment (misalignment) usually can take place again in the combination step between the two substrates.Therefore, simplified manufacturing technique and reduce cost to be still and make the important topic that display panels faced how.
Summary of the invention
The invention provides a kind of thin-film transistor, light can present particular color through behind its insulating film layer, when this thin-film transistor is applied in display panels, helps to reduce the manufacturing cost of display panels.
The present invention also provides a kind of dot structure, to reduce the cost of manufacture and the simplified manufacturing technique step of display panels.
The present invention also provides a kind of display panels, makes pel array causes the cost raising with colour filter array problem respectively to solve.
The present invention proposes a kind of thin-film transistor, and it is disposed on the substrate.This thin-film transistor comprises grid, semiconductor layer, gate insulation layer and source electrode and drain electrode.Gate insulation layer is between grid and semiconductor layer, and wherein light presents specific color through behind the gate insulation layer.Source electrode then is disposed on the semiconductor layer with drain electrode.
The present invention also proposes a kind of dot structure, is disposed on the substrate.This dot structure comprises grid, semiconductor layer, gate insulation layer, source electrode and drain electrode, protective layer and pixel electrode.Gate insulation layer is between grid and semiconductor layer, and source electrode and drain configuration are on semiconductor layer.Protective layer covers source electrode and part drain electrode at least, and wherein light can present specific color after one of them at least through gate insulation layer and protective layer.Pixel electrode is disposed on the protective layer, and is electrically connected with drain electrode.
In an embodiment of the present invention, the material of above-mentioned gate insulation layer comprises acryl.
In an embodiment of the present invention, the material of above-mentioned gate insulation layer comprise polymethyl methacrylate with photochromic conversion unit structure (color-polymethyl methacrylate, color-PMMA).
In an embodiment of the present invention, the material of above-mentioned gate insulation layer comprises organic insulating material and is mixed in the interior at least a dyestuff of organic insulating material.
In an embodiment of the present invention, have a plurality of nano particles in the above-mentioned gate insulation layer.The material of nano particle comprises titanium oxide, and wherein the content of titanium oxide in gate insulation layer is about 1 percentage by weight to 15 percentage by weight.In addition, the diameter of nano particle is about 20 nanometers.
In an embodiment of the present invention, the material of above-mentioned gate insulation layer comprises inorganic insulating material and is distributed in a plurality of quantum dots in the inorganic insulating material.
In an embodiment of the present invention, above-mentioned gate insulation layer comprises color filter film.Above-mentioned color filter film comprises red filter coating, green filter film or blue filter coating, and wherein the thickness of red filter coating is
The thickness of green filter film is
And the thickness of blue filter coating is
In an embodiment of the present invention, the material of above-mentioned semiconductor layer comprises organic semiconducting materials or inorganic semiconductor material.
In an embodiment of the present invention, above-mentioned thin-film transistor also comprises high dielectric organic layer, is disposed between gate insulation layer and the semiconductor layer.
In an embodiment of the present invention, above-mentioned grid is between semiconductor layer and substrate.
In an embodiment of the present invention, above-mentioned semiconductor layer is between grid and substrate.At this moment, thin-film transistor also comprises interlayer insulating film, and grid is between gate insulation layer and interlayer insulating film.
In an embodiment of the present invention, the material of above-mentioned protective layer comprises acryl.
In an embodiment of the present invention, the material of above-mentioned protective layer comprises the polymethyl methacrylate with photochromic conversion group.
In an embodiment of the present invention, the material of above-mentioned protective layer comprises organic insulating material and is mixed in the interior dyestuff of organic insulating material.
In an embodiment of the present invention, the material of above-mentioned protective layer comprises inorganic insulating material and is distributed in a plurality of quantum dots in the organic insulating material.
In an embodiment of the present invention, above-mentioned protective layer comprises color filter film, and wherein color filter film comprises red filter coating, green filter film or blue filter coating.
In an embodiment of the present invention, above-mentioned thin-film transistor also comprises protective layer, and it is disposed in the drain electrode.
The present invention proposes a kind of thin-film transistor that is disposed on the substrate again.This thin-film transistor comprises grid, semiconductor layer, source electrode and drain electrode, gate insulation layer and interlayer insulating film.Source electrode and drain configuration are on semiconductor layer.Gate insulation layer is between grid and semiconductor layer.Grid is between gate insulation layer and interlayer insulating film, and wherein light presents specific color through behind the interlayer insulating film.
The present invention reintroduces a kind of dot structure that is disposed on the substrate.This dot structure comprises grid, semiconductor layer, gate insulation layer, interlayer insulating film, source electrode and drain electrode, protective layer and pixel electrode.Gate insulation layer is between grid and semiconductor layer.Grid is between gate insulation layer and interlayer insulating film.Source electrode and drain configuration are on semiconductor layer.Protective layer covers source electrode and part drain electrode at least, and wherein light can present specific color after one of them at least through interlayer insulating film and protective layer.Pixel electrode is disposed on the protective layer, and is electrically connected with drain electrode.
In an embodiment of the present invention, the material of above-mentioned interlayer insulating film comprises acryl.
In an embodiment of the present invention, the material of above-mentioned interlayer insulating film comprise polymethyl methacrylate with photochromic conversion unit structure (color-polymethyl methacrylate, color-PMMA).
In an embodiment of the present invention, the material of above-mentioned interlayer insulating film comprises organic insulating material and is mixed in the interior dyestuff at least of organic insulating material.
In an embodiment of the present invention, have a plurality of nano particles in the above-mentioned interlayer insulating film.The material of nano particle comprises titanium oxide, and wherein the content of titanium oxide in interlayer insulating film is about 1wt% (being percentage by weight) to 15 percentage by weights.In addition, the diameter of nano particle is about 20 nanometers.
In an embodiment of the present invention, the material of above-mentioned interlayer insulating film comprises inorganic insulating material and is distributed in a plurality of quantum dots in the inorganic insulating material.
In an embodiment of the present invention, above-mentioned interlayer insulating film comprises color filter film.Above-mentioned color filter film comprises red filter coating, green filter film or blue filter coating, and wherein the thickness of red filter coating is
The thickness of green filter film is
And the thickness of blue filter coating is
In an embodiment of the present invention, the material of above-mentioned semiconductor layer comprises organic semiconducting materials or inorganic semiconductor material.
In an embodiment of the present invention, above-mentioned thin-film transistor also comprises high dielectric organic layer, is disposed between interlayer insulating film and the semiconductor layer.
In an embodiment of the present invention, above-mentioned grid is between semiconductor layer and substrate.
In an embodiment of the present invention, above-mentioned semiconductor layer is between grid and substrate.At this moment, thin-film transistor also comprises interlayer insulating film, and grid is between gate insulation layer and interlayer insulating film.
In an embodiment of the present invention, the material of above-mentioned protective layer comprises acryl.
In an embodiment of the present invention, the material of above-mentioned protective layer comprises the polymethyl methacrylate with photochromic conversion group.
In an embodiment of the present invention, the material of above-mentioned protective layer comprises organic insulating material and is mixed in the interior dyestuff of organic insulating material.
In an embodiment of the present invention, the material of above-mentioned protective layer comprises inorganic insulating material and is distributed in a plurality of quantum dots in the inorganic insulating material.
In an embodiment of the present invention, above-mentioned protective layer comprises color filter film, and wherein color filter film comprises red filter coating, green filter film or blue filter coating.
The present invention also proposes a kind of display panels, and it comprises first substrate, second substrate and liquid crystal layer.First substrate has any dot structure or the thin-film transistor described in a plurality of as the above-mentioned embodiment, and wherein light is through presenting specific color after each dot structure or each thin-film transistor.Second substrate and first substrate are oppositely arranged, and liquid crystal layer is arranged between first substrate and second substrate.
The present invention has the material of the insulation material of filter action or photochromic transformation as the insulating film layer in the thin-film transistor because of employing, so light can present specific color after by the insulating film layer of thin-film transistor.In addition, the protective layer in the dot structure of the present invention also can utilize similar material to be made, so light just can present specific color through behind the dot structure.That is to say that the dot structure of the present invention colored filter of need not arranging in pairs or groups just can present colouring and shows.Display panels of the present invention has above-mentioned dot structure, so the manufacturing process of display panels of the present invention can be saved the step of making colour filter array, thereby can reduce cost.
The present invention is above-mentioned to be become apparent with other purpose, feature and advantage in order to allow, and below especially exemplified by preferred embodiment, and cooperates appended accompanying drawing to be described in detail below.
Description of drawings
Fig. 1 is the thin-film transistor of the embodiment of the invention.
Fig. 2 is the dot structure of the embodiment of the invention.
Fig. 3 is the thin-film transistor of another embodiment of the present invention.
Fig. 4 is the dot structure of another embodiment of the present invention.
Fig. 5 is the schematic diagram that the display panels of the embodiment of the invention is shown.
Wherein, description of reference numerals is as follows:
100,280,300,490: thin-film transistor
110,210,310,410: substrate
120,220,320,420: grid
130,230,330,430: semiconductor layer
140,240,340,440: gate insulation layer
152,252,352,452: source electrode
154,254,354,454: drain electrode
160: high dielectric organic layer
170,260,370,470: protective layer
200,400,512: dot structure
270,480: pixel electrode
360: interlayer insulating film
500: display panels
510: the first substrates
520: the second substrates
530: liquid crystal layer
Embodiment
In the known thin-film transistor, must one or more layers insulating barrier of configuration so that electric insulation between grid and source electrode, drain electrode and the channel layer.Because, have multiple insulating material can have the photochromic conversion or the effect of optical filtering, so the present invention proposes to utilize the insulating material that can make light present different color to make the insulating film layer of thin-film transistor and dot structure at this.So, light can present specific color after through thin-film transistor of the present invention, dot structure and relevant element or display unit.
Fig. 1 illustrates the thin-film transistor of the embodiment of the invention.Please refer to Fig. 1, thin-film transistor 100 is disposed on the substrate 110.Thin-film transistor 100 comprises grid 120, semiconductor layer 130, gate insulation layer 140 and source electrode 152 and drain electrode 154.Gate insulation layer 140 is between grid 120 and semiconductor layer 130, and wherein light presents specific color through behind the gate insulation layer 140.Source electrode 152 is disposed on the semiconductor layer 130 with 154 of drain electrodes, and source electrode 152 and drain electrode 154 lay respectively at the both sides of grid 120.At this, the specific color that light presented comprises the cognizable shades of colour of human eye, as red, green, blue, yellow or the like.
In the present embodiment, grid 120 for example is between substrate 110 and semiconductor layer 130, in other embodiments, also can be that semiconductor layer 130 is between substrate 110 and grid 120.In addition, the material of gate insulation layer 140 for example is the acryl material.Specifically, the acryl material comprises numerous species, and the acryl that is applied to present embodiment for example be polymethyl methacrylate with photochromic conversion group (color-polymethyl methacrylate, color-PMMA).This kind material mainly is to add photochromic conversion group in the chemical constitution of polymethyl methacrylate, so that light can present specific color by after this kind material.Wherein, the structure of photochromic conversion group can be with reference to R.M.Christie, C.H.Lui, 1999, the research of fluorescent dye: first, the electronic spectrum The Characteristic Study of substituted cumarin, dyestuff and pigment 42,85-93 page or leaf (Studies of fluorescent dyes:part 1.An investigationof the electronic spectral properties of substituted coumarins, Dye andPigment4285-93pp).
In addition, gate insulation layer 140 also can select for use other material to make, and for example, the material of gate insulation layer 140 can be organic insulating material and be mixed in the interior at least a dyestuff of organic insulating material.Dyestuff has numerous species, for example can use in the present embodiment organic light emitting display (OrganicLight Emitting Device, OLED) in employed dyestuff.In other embodiments, also can select for use the dyestuff of other kind to sneak in the organic insulating material and become the material of gate insulation layer 140.
Certainly, in the thin-film transistor 100, can utilize inorganic material such as silica, silicon nitride and silicon oxynitride as gate insulation layer 140.Only need this moment to form a plurality of quantum dots in inorganic insulating material, present different colors after just can making light by gate insulation layer 140, wherein these quantum dots for example are selenium sulfide, cadmium sulfide (SeS, CdS) etc.
Furthermore,, present different colors, can utilize the mode of making colour filter array to make gate insulation layer 140 in order to make light through after the gate insulation layer 140.In other words, the production method of gate insulation layer 140 can be by the ink jet printing manufacturing process color filter film to be formed between grid 120 and the semiconductor layer 130.Common color filter film comprises the color filter film of red filter coating, green filter film, blue filter coating or other color.When gate insulation layer 140 was red filter coating, its thickness was about
When gate insulation layer 140 is green filter film, its thickness can for
And when gate insulation layer 140 was blue filter coating, its thickness was roughly
In addition, can also have a plurality of nano particles in the gate insulation layer 140, its diameter is approximately 20 nanometers, to reach the effect that prevents dazzle.The material of nano particle comprises titanium oxide, and the content of titanium oxide in gate insulation layer 140 is about 1 percentage by weight to 15 percentage by weight.Simultaneously, in order to improve the electrical characteristics of thin-film transistor 100, also can between gate insulation layer 140 and semiconductor layer 130, dispose high dielectric organic layer 160.Specifically, the material of the high dielectric organic layer 160 that present embodiment adopted for example is a kind of fluorine-containing organic material, and its dielectric constant is about 6, and its thickness is about 3000
In the present embodiment, the color that has different color saturations after can making light by gate insulation layer 140 by the thickness of adjusting gate insulation layer 140 along with different design requirements.In addition, grid 120, source electrode 152 can be made by one deck or multiple layer metal material with drain electrode 154.In order to make thin-film transistor 100 have higher light penetration rate, also can utilize the electrically conducting transparent material, make grid 120, source electrode 152 and drain electrode 154 as indium tin oxide, indium-zinc oxide etc.On the other hand, the material of semiconductor layer 130 can be inorganic semiconductor material or organic semiconductor material, and wherein the inorganic semiconductor material for example is amorphous silicon (amorphous silicon), and the organic semiconductor material for example is pentacene (pentacene).When semiconductor layer 130 was between substrate 100 and grid 120, the material of semiconductor layer 130 can also be polysilicon (poly-crystalline silicon).In addition, for diaphragm transistor 100, can be at configuration protection layer 170 above source electrode 152 and the drain electrode 154.
Fig. 2 is the dot structure of the embodiment of the invention.Please refer to Fig. 2, dot structure 200 is disposed on the substrate 210.This dot structure 200 comprises grid 220, semiconductor layer 230, gate insulation layer 240, source electrode 252 and drain electrode 254, protective layer 260 and pixel electrode 270.Grid 220, semiconductor layer 230, gate insulation layer 240 and source electrode 252 and drain electrode 254 common formation thin-film transistors 280.Protective layer 260 covers source electrode 252 at least and part drains 254, and 270 of pixel electrodes are disposed on the protective layer 260, and is electrically connected with drain electrode 254.In addition, light can present specific color after one of them at least through gate insulation layer 240 and protective layer 260.
In the present embodiment, gate insulation layer 240 can adopt the material identical with the gate insulation layer 140 of the foregoing description to make, and then light can present specific color through behind the gate insulation layer 240.In addition, gate insulation layer 240 also can adopt the transparent insulation material to make, and then light is through just presenting specific color after the protective layer 260.
When just presenting specific color after light is process protective layer 260, the material of protective layer 260 comprises acryl, and it for example is the polymethyl methacrylate with photochromic conversion group.Or the material of protective layer 260 can be organic insulating material and be mixed in the interior dyestuff of organic insulating material.Even the material of protective layer 260 can also be inorganic insulating material and be distributed in a plurality of quantum dots in the inorganic insulating material.In addition, protective layer 260 can also be a color filter film, and wherein color filter film comprises red filter coating, green filter film or blue filter coating.
Certainly, present embodiment is not got rid of and is made light all can present specific color by behind gate insulation layer 240 and the protective layer 260.In other words, gate insulation layer 240 can all be the insulating film layer that can make photochromic conversion or have filter action with protective layer 260 simultaneously.When dot structure 200 is applied to display panels, does not need to make in addition colour filter array and just can make display panels have the display effect of colouring.Therefore, dot structure 200 is applied to help in the display panels to save the cost of manufacture of display panels and the making step of simplification display panels.
Fig. 3 is the thin-film transistor of another embodiment of the present invention.Please refer to Fig. 3, thin-film transistor 300 is disposed on the substrate 310, and it comprises grid 320, semiconductor layer 330, gate insulation layer 340, source electrode 352 and drain electrode 354 and interlayer insulating film 360.Source electrode 352 is disposed on the semiconductor layer 330 with drain electrode 354, and is positioned at the both sides of grid 320.Gate insulation layer 340 is between grid 320 and semiconductor layer 330.Grid 320 is between gate insulation layer 340 and interlayer insulating film 360, and wherein light presents specific color after one of them at least through interlayer insulating film 360 and gate insulation layer 340.
If light can present specific color through behind the gate insulation layer 340, then the gate insulation layer 340 of this thin-film transistor 300 can have identical material with the gate insulation layer 140 of thin-film transistor 100.Same, light is just to have specific color through behind the interlayer insulating film 360, and then interlayer insulating film 360 can adopt the material identical with the gate insulation layer 140 of thin-film transistor 100 to make.Certainly, interlayer insulating film 360 and gate insulation layer 340 can be simultaneously for having the photochromic transformation or the insulating film layer of filter action.At this moment, the material of interlayer insulating film 360 and gate insulation layer 340 can be color filter film, the organic insulating material that contains dyestuff simultaneously, comprise the inorganic insulating material of quantum dot or have the materials such as polymethyl methacrylate of photochromic conversion group.。In addition, for diaphragm transistor 300, can be at configuration protection layer 370 above source electrode 352 and the drain electrode 354.
Fig. 4 is the dot structure of another embodiment of the present invention.Please refer to Fig. 4, dot structure 400 is disposed on the substrate 410, and it comprises grid 420, semiconductor layer 430, gate insulation layer 440, source electrode 452 and drain electrode 454, interlayer insulating film 460, protective layer 470 and pixel electrode 480.Grid 420, semiconductor layer 430, gate insulation layer 440, source electrode 452 and drain electrode 454, interlayer insulating film 460 common formation thin-film transistors 490.Protective layer 470 covers source electrode 452 and drains 454 with part, and pixel electrode 480 is disposed on the protective layer 470, and is electrically connected with drain electrode 454.Light presents specific color after one of them at least through interlayer insulating film 460, gate insulation layer 440 and protective layer 470.
Specifically, in the dot structure 400 of present embodiment, the material of the optional gate insulation layer 140 with the foregoing description of interlayer insulating film 460 and gate insulation layer 440 is made, and protective layer 470 can select for use the foregoing description protective layer 260 material made.In other words, any one or more layers can have the photochromic conversion or the effect of optical filtering in interlayer insulating film 460, gate insulation layer 440 and the protective layer 470.When protective layer 470 had photochromic conversion or filter action, interlayer insulating film 460 can be to be made by the insulating material of transparent material with gate insulation layer 440, and vice versa.In addition, for the electrical characteristics that make thin-film transistor 490 more promote, can between gate insulation layer 440 and semiconductor layer 430, dispose the fluorine-containing high dielectric organic layer of one deck.
In the present embodiment, light can present specific color after by the insulating film layer in the dot structure 400, therefore dot structure 400 is applied in the display panels, can save the making step and the cost of colour filter array.The pel array that is made of dot structure 400 arrayed does not need just can present with the colour filter array collocation display performance of colouring.Therefore, when dot structure 400 was applied to display panels, the problem that is difficult for having bit errors produced and has a good technology qualification rate.
Fig. 5 is the schematic diagram that the display panels of the embodiment of the invention is shown.Please refer to Fig. 5, display panels 500 comprises first substrate 510, second substrate 520 and liquid crystal layer 530.First substrate 510 has a plurality of dot structures 512, and wherein light is through presenting specific color after each dot structure 512.Second substrate 520 and first substrate 510 are oppositely arranged, and liquid crystal layer 530 is arranged between first substrate 510 and second substrate 520.At this, dot structure 512 can be wherein a kind of in the various dot structures 200 of the foregoing description or the dot structure 400.That is to say that each insulating film layer in the dot structure 512 can be by the insulation material with photochromic transformation or filter action to make.What deserves to be mentioned is, in the display panels 500, the dot structure 512 of arrayed must not dispose with the colour filter array collocation accordingly, so first substrate 510 and second substrate 520 are difficult for taking place the problem of mis-alignment when making up, and has higher technology qualification rate.Simultaneously, save the making of colour filter array in the manufacture process of display panels 500 and had the benefit of simplified manufacturing process and cost reduction.
In sum, thin-film transistor of the present invention, dot structure and display panels have the advantage of the following stated at least.At first, the insulating film layer in thin-film transistor of the present invention and the dot structure can have the photochromic conversion or the effect of optical filtering, therefore can make light by presenting specific color after these insulating film layers.At this moment, dot structure of the present invention and thin-film transistor are applied in the display panels, display panels can not need the additional configuration colour filter array, and cost of manufacture is reduced and simplified manufacturing technique.In addition, display panels of the present invention is difficult for taking place the error of contraposition when first substrate and second substrate in combination, therefore higher technology qualification rate can be arranged.
Though the present invention with preferred embodiment openly as above; right its is not in order to limit the present invention; those skilled in the art without departing from the spirit and scope of the present invention; when can doing a little change and modification, so protection scope of the present invention is as the criterion when looking the scope that appending claims defines.
Claims (32)
1. a thin-film transistor is disposed on the substrate, and this thin-film transistor comprises:
Grid;
Semiconductor layer;
Gate insulation layer, between this grid and this semiconductor layer, wherein light presents specific color through behind this gate insulation layer; And
Source electrode and drain electrode are disposed on this semiconductor layer.
2. thin-film transistor as claimed in claim 1, wherein the material of this gate insulation layer comprises acryl.
3. thin-film transistor as claimed in claim 1, wherein the material of this gate insulation layer is the polymethyl methacrylate with photochromic conversion unit structure.
4. thin-film transistor as claimed in claim 1, wherein the material of this gate insulation layer is organic insulating material and is mixed in the interior at least a dyestuff of this organic insulating material.
5. thin-film transistor as claimed in claim 1, wherein the material of this gate insulation layer is inorganic insulating material and is distributed in a plurality of quantum dots in this inorganic insulating material.
6. thin-film transistor as claimed in claim 1, wherein the material of this gate insulation layer is a color filter film.
7. thin-film transistor as claimed in claim 6, wherein the thickness of this color filter film is
8. thin-film transistor as claimed in claim 1 wherein has a plurality of nano particles in this gate insulation layer, and the diameter of described nano particle is about 20 nanometers.
9. thin-film transistor as claimed in claim 8, the material of wherein said nano particle comprises titanium oxide, the content of titanium oxide in this gate insulation layer is about 1 percentage by weight to 15 percentage by weight.
10. thin-film transistor as claimed in claim 1, wherein the material of this semiconductor layer comprises organic semiconducting materials or inorganic semiconductor material.
11. thin-film transistor as claimed in claim 1 also comprises high dielectric organic layer, is disposed between this gate insulation layer and this semiconductor layer.
12. thin-film transistor as claimed in claim 1, wherein this grid is between this semiconductor layer and this substrate.
13. thin-film transistor as claimed in claim 1, wherein this semiconductor layer is between this grid and this substrate.
14. thin-film transistor as claimed in claim 13 also comprises interlayer insulating film, this grid is between this gate insulation layer and this interlayer insulating film.
15. thin-film transistor as claimed in claim 1 also comprises protective layer, is positioned in this drain electrode.
16. a dot structure is disposed on the substrate, this dot structure comprises:
Grid;
Semiconductor layer;
Gate insulation layer is between this grid and this semiconductor layer;
Source electrode and drain electrode are disposed on this semiconductor layer;
Protective layer covers this source electrode and part drain electrode, and wherein light can present specific color through behind this protective layer; And
Pixel electrode is disposed on this protective layer, and is electrically connected with this drain electrode.
17. dot structure as claimed in claim 16, wherein the material of this protective layer comprises acryl.
18. dot structure as claimed in claim 16, wherein the material of this protective layer is the polymethyl methacrylate with photochromic conversion unit structure.
19. dot structure as claimed in claim 16, wherein the material of this protective layer is organic insulating material and is mixed in the interior at least a dyestuff of this organic insulating material.
20. dot structure as claimed in claim 16, wherein the material of this protective layer is inorganic insulating material and is distributed in a plurality of quantum dots in this inorganic insulating material.
21. dot structure as claimed in claim 16, wherein the material of this protective layer is a color filter film.
22. dot structure as claimed in claim 21, wherein the thickness of this color filter film is
23. a thin-film transistor is disposed on the substrate, this thin-film transistor comprises:
Grid;
Semiconductor layer;
Source electrode and drain electrode are disposed on this semiconductor layer;
Gate insulation layer is between this grid and this semiconductor layer; And
Interlayer insulating film, this grid are between this gate insulation layer and this interlayer insulating film, and wherein light presents specific color through behind this interlayer insulating film.
24. thin-film transistor as claimed in claim 23, wherein the material of this interlayer insulating film comprises acryl.
25. thin-film transistor as claimed in claim 23, wherein the material of this interlayer insulating film is the polymethyl methacrylate with photochromic conversion unit structure.
26. thin-film transistor as claimed in claim 23, wherein the material of this interlayer insulating film is organic insulating material and is mixed in the interior at least a dyestuff of this organic insulating material.
27. thin-film transistor as claimed in claim 23, wherein the material of this interlayer insulating film is inorganic insulating material and is distributed in a plurality of quantum dots in this inorganic insulating material.
28. thin-film transistor as claimed in claim 23, wherein the material of this interlayer insulating film is a color filter film.
29. thin-film transistor as claimed in claim 28, wherein the thickness of this color filter film is
30. as the described thin-film transistor of arbitrary claim in the claim 24 to 28, wherein have a plurality of nano particles in this interlayer insulating film, the diameter of described nano particle is about 20 nanometers.
31. thin-film transistor as claimed in claim 30, the material of wherein said nano particle comprises titanium oxide, and the content of titanium oxide in this gate insulation layer is about 1 percentage by weight to 15 percentage by weight.
32. a display panels comprises:
First substrate has a plurality of thin-film transistors as claimed in claim 1;
Second substrate is oppositely arranged with this first substrate; And
Liquid crystal layer is arranged between this first substrate and this second substrate.
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Families Citing this family (9)
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| CN101634789B (en) * | 2009-08-25 | 2013-06-12 | 友达光电股份有限公司 | Pixel structure and manufacture method thereof |
| CN102012589B (en) * | 2009-09-08 | 2013-11-27 | 北京京东方光电科技有限公司 | TFT-LCD array substrate and manufacturing method thereof |
| CN101894862A (en) * | 2010-06-09 | 2010-11-24 | 西安能讯微电子有限公司 | Method for designing transparent electrode device |
| CN103309087A (en) | 2013-06-08 | 2013-09-18 | 北京京东方光电科技有限公司 | Array substrate, liquid crystal display panel and display device |
| CN103346266B (en) * | 2013-06-21 | 2016-03-30 | 深圳市华星光电技术有限公司 | A kind of luminescent device, display floater and manufacture method thereof |
| CN104766893B (en) * | 2015-04-17 | 2018-11-30 | 南开大学 | A kind of thin film transistor (TFT) and preparation method thereof |
| CN104777677B (en) * | 2015-05-05 | 2017-09-29 | 京东方科技集团股份有限公司 | Display base plate and preparation method, display device |
| CN106992213A (en) * | 2017-03-24 | 2017-07-28 | 深圳市华星光电技术有限公司 | Thin film transistor (TFT) and its manufacture method |
| CN111679496B (en) * | 2020-06-11 | 2023-09-26 | Tcl华星光电技术有限公司 | Backlight module, manufacturing method thereof and display terminal |
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