CN104766892A - Calcium-doped zinc oxide thin film transistor and manufacturing method thereof - Google Patents
Calcium-doped zinc oxide thin film transistor and manufacturing method thereof Download PDFInfo
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- CN104766892A CN104766892A CN201510158994.4A CN201510158994A CN104766892A CN 104766892 A CN104766892 A CN 104766892A CN 201510158994 A CN201510158994 A CN 201510158994A CN 104766892 A CN104766892 A CN 104766892A
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- calcium
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 239000010409 thin film Substances 0.000 title claims abstract description 32
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 22
- 238000004519 manufacturing process Methods 0.000 title abstract description 7
- 238000000034 method Methods 0.000 claims abstract description 22
- 239000004065 semiconductor Substances 0.000 claims abstract description 20
- 239000000463 material Substances 0.000 claims abstract description 12
- 238000005516 engineering process Methods 0.000 claims abstract description 8
- 239000010408 film Substances 0.000 claims description 22
- 229960001296 zinc oxide Drugs 0.000 claims description 17
- 239000011575 calcium Substances 0.000 claims description 16
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 15
- 229910052791 calcium Inorganic materials 0.000 claims description 15
- 238000002360 preparation method Methods 0.000 claims description 14
- 239000000126 substance Substances 0.000 claims description 11
- 238000001039 wet etching Methods 0.000 claims description 11
- 239000011521 glass Substances 0.000 claims description 10
- SSWDODWDXMYUNE-UHFFFAOYSA-N [O--].[O--].[Ca++].[Zn++] Chemical compound [O--].[O--].[Ca++].[Zn++] SSWDODWDXMYUNE-UHFFFAOYSA-N 0.000 claims description 9
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 9
- 229910052760 oxygen Inorganic materials 0.000 claims description 9
- 239000001301 oxygen Substances 0.000 claims description 9
- 239000000758 substrate Substances 0.000 claims description 9
- 238000004544 sputter deposition Methods 0.000 claims description 7
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 238000005530 etching Methods 0.000 claims description 6
- 238000001259 photo etching Methods 0.000 claims description 6
- 238000002156 mixing Methods 0.000 claims description 5
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 4
- 229910052751 metal Inorganic materials 0.000 claims description 4
- 239000002184 metal Substances 0.000 claims description 4
- 239000000919 ceramic Substances 0.000 claims description 3
- 239000004020 conductor Substances 0.000 claims description 3
- 238000002161 passivation Methods 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 2
- 239000003989 dielectric material Substances 0.000 claims description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 2
- 230000008569 process Effects 0.000 abstract description 7
- 230000008901 benefit Effects 0.000 abstract description 3
- 230000000694 effects Effects 0.000 abstract description 3
- 238000012545 processing Methods 0.000 description 4
- 238000011160 research Methods 0.000 description 4
- 239000013078 crystal Substances 0.000 description 3
- 230000008859 change Effects 0.000 description 2
- 238000001755 magnetron sputter deposition Methods 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 230000010355 oscillation Effects 0.000 description 2
- 238000006467 substitution reaction Methods 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 230000000007 visual effect Effects 0.000 description 2
- 229920001621 AMOLED Polymers 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000011031 large-scale manufacturing process Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- 239000002159 nanocrystal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035699 permeability Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 231100000614 poison Toxicity 0.000 description 1
- 230000007096 poisonous effect Effects 0.000 description 1
- 230000001105 regulatory effect Effects 0.000 description 1
- 229920006395 saturated elastomer Polymers 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/22—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds
- H01L29/227—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only AIIBVI compounds further characterised by the doping material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66742—Thin film unipolar transistors
- H01L29/66772—Monocristalline silicon transistors on insulating substrates, e.g. quartz substrates
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Abstract
The invention provides a thin film transistor and a manufacturing method thereof and belongs to the fields of the semiconductor industry and panel display. The core is that calcium-doped zinc oxide semiconductor materials are adopted and made into a conducting channel layer of the thin film transistor, the size of manufactured semiconductor thin film grains is smaller than 20 nanometers, and the semiconductor thin film grains are uniformly distributed and belong to nanocrystalline oxide semiconductors. The process method has the advantages that steps are simple, manufacturing cost is low, uniformity is good, the method is used for low-temperature processes and has an active effect of improving the performance of a thin film transistor device, the performance in the aspects of the mobility, switching ratio, threshold voltage, subthreshold swing and the like of the device is improved, and the method is suitable for transparent display and flexible display technologies.
Description
Technical field
The present invention relates to a kind of method of glass substrate or preparing thin film transistor on plastic substrate, belong to semicon industry, flat display field.
Background technology
In the information age, Display Technique is in occupation of critical role, and the growing of Display Technique brings more colourful visual experience for people.Current flat panel display comprises AMLCD (liquid crystal display), AMOLED (organic light-emitting diode display), Flexible Displays, Transparence Display etc.Along with the development of display technology, the aspect such as brightness, visual angle, full color of flat-panel monitor (Flat paneldisplay, FPD) is all improved.
Transparent electron display is the advanced subject showing field now, therefore, becomes key about the exploration of transparent oxide semiconductor thin film and research.Transparent conductive oxide material need possess high permeability and high conductivity two kinds of physical characteristics simultaneously, and this characteristic requirements oxide material has enough large band gap width, and namely energy gap is about greater than 3.1eV.Zinc oxide material is semiconductor material with wide forbidden band, and energy gap is 3.37eV, and therefore, Zinc oxide based film transistor is the study hotspot in TFT field.Zinc oxide-base TFT has the following advantages: can be deposited with active layer at low temperatures by the method for sputtering, with low cost, technique is simple; The electron mobility of Zinc oxide based semiconductor is high, makes TFT have high driveability and switching speed; Optical transmittance, higher than 80%, can be used for Transparence Display.
Nineteen sixty-eight, the report of first single-crystal zinc oxide film transistor is delivered, and probably after 2003, the research report of zinc oxide thin-film transistor just increases gradually.But zinc oxide material used under normal circumstances is polycrystalline structure, the zinc oxide preparation of monocrystalline or amorphous is very difficult.Due to the existence of crystal boundary, the uniformity of the thin-film transistor of the zones of different of display screen can be very poor.In addition, the free electronic concentration of zinc-oxide film is very high, and thus the off-state current of thin-film transistor and threshold voltage are difficult to control.Just because of this, researcher wishes to improve the electric property of film by adulterating to zinc-oxide film.At present by everybody extensively research be IGZO thin-film transistor, can effectively suppress thin film electronic concentration by the introducing of Ga element, thus OFF state performance is improved.In addition, the structure of amorphous ensure that the uniformity of device.But In is a kind of rare and poisonous element, use that to mix the material manufacturing cost of In high and not environmentally, be difficult to be widely used in large-scale production.Zinc oxide calcium (ZnO+CaO) thin-film transistor does not also have studied, and Ca is a kind of common and element of environmental protection, is thus carried out studying as transparent conductive material by zinc oxide calcium having important scientific research value and practical significance.
Summary of the invention
The object of the present invention is to provide a kind of nanocrystalline ZnO calcium thin-film transistor and preparation method thereof, the performance of the aspects such as the mobility of device, on-off ratio, threshold voltage, the subthreshold amplitude of oscillation can be improved.
Technical scheme of the present invention is as follows:
A kind of zinc oxide calcium thin-film transistor, comprise substrate, gate electrode, gate dielectric layer, semiconductor conducting channel layer, source region and drain region, it is characterized in that, described semiconductor conducting channel layer adopts the zinc oxide nanocrystalline semi-conducting material mixing calcium, and the content of calcium accounts for 2%-20%.
Glass or plastic are prepared a preparation method for zinc oxide calcium thin-film transistor, and concrete steps comprise following:
1) on glass or plastic, grow layer of transparent conductive film, chemical wet etching goes out gate electrode.
2) and then grow one deck gate dielectric membrane, chemical wet etching goes out gate dielectric layer.
3) on gate dielectric layer, utilize sputtering technology to grow one deck channel layer, the target that sputtering uses is the zinc-oxide ceramic target of mixing calcium, and the content of calcium accounts for 2%-20%, and in sputter procedure, oxygen partial pressure controls to go out conductivity channel layer at 0%-15% chemical wet etching.
4) grow layer of transparent conductive film, chemical wet etching goes out source, drain electrode.
5) grow one deck passivation dielectric layer, photoetching and etching form the fairlead of grid, source and leakage.
6) grow layer of metal film, photoetching and etching form metal electrode and interconnection.
Described preparation method, the conductive film that step (1) grows, is formed by transparent conductive film material ITO, AZO, GZO etc.
Described preparation method, the gate dielectric material that step (2) grows, by silicon dioxide, or the insulating material such as silicon nitride, hafnium oxide, aluminium oxide, zirconia is formed.
Described preparation method, the conductive film that step (4) grows, is formed by transparent conductive material ITO, AZO, GZO etc.
Advantage of the present invention and good effect: the invention provides a kind of manufacture method preparing nanocrystalline ZnO calcium thin-film transistor on glass or plastic, the semiconductive thin film crystallite dimension of preparation is lower than 20nm, and be evenly distributed, belong to nano-crystal oxide semiconductor.It is simple that this process has step, cheap for manufacturing cost, uniformity is good, for low temperature process, to the performance improving film transistor device, there is good effect, improve the performance of the aspects such as the mobility of device, on-off ratio, threshold voltage, the subthreshold amplitude of oscillation, be applicable to Transparence Display and flexible display technologies.And this thin-film transistor presents the insensitive characteristic of partial pressure of oxygen, the characteristic that can regulate and control device in preparation process in larger process condition range is described, has widened process window.
Accompanying drawing explanation
The glass of Fig. 1 described by instantiation of the present invention or the cross-sectional view of preparing thin film transistor on plastic substrate;
The glass of Fig. 2 described by instantiation of the present invention or the plan structure schematic diagram of preparing thin film transistor on plastic substrate;
Fig. 3 (a) ~ (e) sequentially show the main technological steps of a thin-film transistor of the present invention manufacture method, wherein:
Fig. 3 (b) illustrates the processing step that gate electrode is formed;
Fig. 3 (c) illustrates the processing step that gate dielectric layer is formed;
Fig. 3 (d) illustrates the processing step that channel layer is formed;
Fig. 3 (e) illustrates the processing step that source and drain electrode is formed;
The transfer characteristic curve of the zinc oxide calcium thin-film transistor that Fig. 4 (a) obtains for the present invention, wherein transfer characteristic curve does not significantly change with the increase of partial pressure of oxygen, illustrate that this thin-film transistor is insensitive to partial pressure of oxygen, device property can be regulated and controled in larger process condition range;
The electrical parameter of zinc oxide calcium thin-film transistor that Fig. 4 (b) obtains for the present invention and the correlation of partial pressure of oxygen, wherein switch current ratio, sub-threshold slope and saturated mobility are little with the increase change of partial pressure of oxygen, present more weak correlation;
Fig. 5 is that the zinc oxide calcium film SEM be prepared under different oxygen partial pressure condition schemes, and as seen from the figure, crystal grain is evenly distributed, and is conducive to device and realizes good uniformity.
Embodiment
Below by example, the present invention will be further described.It should be noted that the object announcing example is to help to understand the present invention further, but it will be appreciated by those skilled in the art that: in the scope not departing from the present invention and claims, various substitutions and modifications are all possible.Therefore, the present invention should not be limited to the content disclosed in example, and the scope that the scope of protection of present invention defines with claims is as the criterion.
Thin-film transistor of the present invention is formed in glass or plastic 1, as depicted in figs. 1 and 2.This thin-film transistor comprises gate electrode 2, gate dielectric layer 3, semiconductor conducting channel layer 4, source and drain electrode 5.Described gate electrode 2 is positioned on glass or plastic 1, and described gate dielectric layer 3 is positioned on electrode 2, and described semiconductor conducting channel layer 4 is positioned on gate dielectric layer 3, and described source and drain termination electrode 5 is positioned at semiconductor channel layer 4 two ends.
The instantiation of the preparation method of described thin-film transistor, by shown in Fig. 3 (a) to Fig. 3 (e), comprises the following steps:
As shown in Fig. 3 (a), substrate 1 selects clear glass or plastic substrate.
As shown in Fig. 3 (b), adopt magnetron sputtering technique to grow the conductive films such as the ITO of one deck 30 ~ 150 nanometer thickness on substrate 1, then chemical wet etching goes out gate electrode.
As shown in Fig. 3 (c), utilize PECVD to grow the silicon dioxide layer of one deck 50 ~ 250 nanometer thickness, then chemical wet etching forms gate medium.
As shown in Fig. 3 (d), utilize sputtering technology to grow zinc oxide semiconductor material channel layer that one deck mixes calcium.The target that sputtering uses is the zinc-oxide ceramic target of mixing calcium, and the content of calcium accounts for 2%-20%, and in sputter procedure, oxygen partial pressure controls at 0%-15%.
As shown in Fig. 3 (e), adopt magnetron sputtering technique to grow the conductive films such as the ITO of one deck 50 ~ 300 nanometer thickness, then chemical wet etching forms source, drain electrode.
Grow one deck passivation dielectric layer according to standard technology subsequently, photoetching and etching form the fairlead of grid, source and leakage, regrowth one deck Al or transparent conductive film material, and photoetching and etching form electrode and interconnection.
It is finally noted that, the object publicizing and implementing mode is to help to understand the present invention further, but it will be appreciated by those skilled in the art that: without departing from the spirit and scope of the invention and the appended claims, various substitutions and modifications are all possible.Therefore, the present invention should not be limited to the content disclosed in embodiment, and the scope that the scope of protection of present invention defines with claims is as the criterion.
Claims (5)
1. a zinc oxide calcium thin-film transistor, comprise substrate, gate electrode, gate dielectric layer, semiconductor conducting channel layer, source region and drain region, it is characterized in that, described semiconductor conducting channel layer adopts the zinc oxide nanocrystalline semi-conducting material mixing calcium, and the content of calcium accounts for 2%-20%.
2. a preparation method for zinc oxide calcium thin-film transistor, concrete steps comprise following:
1) on glass or plastic, grow layer of transparent conductive film, chemical wet etching goes out gate electrode;
2) and then grow one deck gate dielectric membrane, chemical wet etching goes out gate dielectric layer;
3) utilize sputtering technology to grow on gate dielectric layer zinc oxide nanocrystalline semiconductor material channel layer that one deck mixes calcium, the target that sputtering uses is the zinc-oxide ceramic target of mixing calcium, the content of calcium accounts for 2%-20%, and in sputter procedure, oxygen partial pressure controls at 0%-15%, and chemical wet etching goes out channel layer;
4) grow layer of conductive film, chemical wet etching goes out source, drain electrode;
5) grow one deck passivation dielectric layer, photoetching and etching form the fairlead of grid, source and leakage;
6) grow layer of metal film, photoetching and etching form metal electrode and interconnection.
3. preparation method as claimed in claim 2, is characterized in that, step 1) conductive film that grows is transparent conductive film material ITO, AZO or GZO of 30 ~ 150 nanometer thickness.
4. preparation method as claimed in claim 2, is characterized in that, step 2) gate dielectric material that grows is silicon dioxide, silicon nitride, hafnium oxide, aluminium oxide or zirconia.
5. preparation method as claimed in claim 2, is characterized in that, step 4) conductive film that grows is transparent conductive material ITO, AZO or GZO.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
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| CN201510158994.4A CN104766892A (en) | 2015-04-03 | 2015-04-03 | Calcium-doped zinc oxide thin film transistor and manufacturing method thereof |
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| CN201510158994.4A CN104766892A (en) | 2015-04-03 | 2015-04-03 | Calcium-doped zinc oxide thin film transistor and manufacturing method thereof |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060286737A1 (en) * | 2005-06-16 | 2006-12-21 | Levy David H | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
| CN101609843A (en) * | 2008-06-18 | 2009-12-23 | 三星移动显示器株式会社 | Thin-film transistor, its manufacture method and have the flat panel display equipment of thin-film transistor |
| CN103515445A (en) * | 2012-06-15 | 2014-01-15 | 北京大学 | Thin film transistor and preparation method thereof |
-
2015
- 2015-04-03 CN CN201510158994.4A patent/CN104766892A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20060286737A1 (en) * | 2005-06-16 | 2006-12-21 | Levy David H | Methods of making thin film transistors comprising zinc-oxide-based semiconductor materials and transistors made thereby |
| CN101609843A (en) * | 2008-06-18 | 2009-12-23 | 三星移动显示器株式会社 | Thin-film transistor, its manufacture method and have the flat panel display equipment of thin-film transistor |
| CN103515445A (en) * | 2012-06-15 | 2014-01-15 | 北京大学 | Thin film transistor and preparation method thereof |
Non-Patent Citations (2)
| Title |
|---|
| KAMAKHYA PRAKASH MISRA ET AL.: "Blueshift in optical band gap in nanocrystalline Zn1-xCaxO films deposited by sol-gel method", 《APPLIED PHYSICS LETTERS》 * |
| Y.S.KIM: "Low-Cost Dopants for High Performance and Aqueous-Derived ZnO Thin-Film Transistors", 《7TH MEETING OF THE MEXICO SECTION OF THE ELECTROCHEMICAL SOCIETY》 * |
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Application publication date: 20150708 |