CN104766621A - Novel stress control-based magnetic logic device - Google Patents
Novel stress control-based magnetic logic device Download PDFInfo
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- G—PHYSICS
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- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
Abstract
The invention discloses a novel stress control-based magnetic logic device. The magnetic logic device is of a composite multilayer film structure, a ferromagnetic film nano wire grows over the center of a linear piezoelectric material film, and two sets of opposite electrodes B1 and B2 are arranged in the middle of a bottom piezoelectric film to be used as input ends of a logic signal level U; in a horizontal plane over the left end of the ferromagnetic nano wire, a conductive nano wire perpendicular to the nano wire direction is used as a magnetic write-in end; an oersted field, generated when a pulse current Iw passes through the conductive nano wire, can change the magnetization direction of the ferromagnetic nano wire underneath, and consequently, a magnetic domain wall is generated in the ferromagnetic nano wire; and the ferromagnetic nano wire is electrified with a control current Ic so as to drive the magnetic domain wall to move along the current direction. The magnetic logic device provided by the invention is based on electric field control, and has the advantages of being low in power consumption and being capable of working at room temperature; and the magnetic logic device can finish a 'NOT' logic function of single input, and 'NAND', 'NOR' and other logic operation functions of dual input or multiple input.
Description
Technical field
The present invention relates to a kind of novel magnetic logic devices based on Stress Control.In piezoelectricity/ferromagnetic mixed structure, pass through inverse piezoelectric effect, piezoelectric substrate generation deformation, and then the thin magnetic film being attached to piezoelectric material surface also produces deformation thereupon, and control wherein neticdomain wall (Domain Wall, hereinafter abbreviated as DW) movement, thus carry out logical operation.The present invention be applicable to any based on the multiferroic mixed structures such as piezoelectricity, ferromagnetism, ferroelasticity, control the semiconductive logic device of magnetic domain wall moving.The invention belongs to the New kind logical component field in semiconductor devices.
Background technology
Spin electric device is because of excellent characteristics such as it is non-volatile, high-speed read-write, high density, high stability, long lives, and development at present rapidly, and is generally considered the most promising semiconductor device.At present, conventional spin electron device needs larger working current, and then there is higher power dissipation problem.Utilize electric field controls magnetic domain wall moving, magnetic moments rotations, realize the function of self-spining device, contribute to reducing power consumption further and improving integrated level.At present, the self-spining device of electric field regulation and control mainly contains three classes: one is the Interface Anisotropy of the magnetic thin film regulating and controlling to be adjacent by the charge accumulation of dielectric material in interface; Two is utilize multi-iron material to control magnetic property by magneto-electric coupled; Three is utilize piezoelectric and ferromagnetic material compound system, by stress changes magnetic property.For first kind device, dielectric material produces interfacial charge, and this interfacial effect changes the magnetic anisotropy in magnetic thin film.But this effect is confined to interface, the knots modification of magnetic anisotropy and magnetic film thickness are inversely proportional to.Compared to second and third class system to the regulating power of thin magnetic film entirety, the interfacial effect relative weak that first kind device produces.It is orderly that multi-iron material has the multiple ferrous such as ferromagnetic and ferroelectric simultaneously, but it is magneto-electric coupled very weak, and be only present in low temperature environment, greatly limited to its application scenarios and development potentiality.And for the 3rd class, i.e. piezoelectricity and ferromagnetic composite material device, at present existing abundant experimental results confirms, the magnetic of the stress changes that can at room temperature utilize the inverse piezoelectric effect of wherein piezoelectric to produce wherein ferromagnetic material.The present invention utilizes composite piezoelectric and ferromagnetic material, by electric field controls magnetic domain wall moving, realizes super low-power consumption Logic judgment.
Summary of the invention
1, object: the object of this invention is to provide a kind of novel magnetic logic devices based on Stress Control, it is by piezoelectricity, ferromagnetic bilayer film composite structure, the electric field change of input is converted into the deformation of film in this magnetic logic devices, and further film deformation is converted into the heat treatment of ferromagnetic material, thus realize at room temperature electric field controls, low-power logic device, complete the logical operation to electric signal.
2, technical scheme: the present invention is a kind of novel magnetic logic devices based on Stress Control is composite multi-layer membrane structure.The space structure of this device as shown in Figure 1.At wire piezoelectric material film overcentre, grow a ferromagnetic thin film nano wire (hereinafter referred to as " ferromagnetic nano wire ").Be two groups of relative electrode B 1, B2 in the middle part of bottom piezoelectric membrane, as the input end of logic signal levels U.In ferromagnetic nano wire left end upper horizontal face, by a conducting nanowires perpendicular to nano wire direction, as magnetic write end.Pulse current I
wthe direction of magnetization of ferromagnetic nano wire below it can be changed by the oersted field produced during conducting nanowires, and then produce neticdomain wall in ferromagnetic nano wire.Control electric current I is passed in ferromagnetic nano wire
c, drive neticdomain wall to move along direction of current.Above the right-hand member of ferromagnetic nano wire, be barrier layer and the pinning layer of MTJ (Magnetic Tunnel Junction, hereinafter abbreviated as MTJ), ferromagnetic nano wire is as the free layer of MTJ simultaneously.The nano-multilayer film being similar to sandwich structure that two-layer ferromagnetic material (i.e. free layer and pinning layer) sandwich one deck insulator (i.e. barrier layer) is formed is the core texture of MTJ.Due to the spin properties of electronics, under the effect of electron tunneling transport property, according to the parallel or antiparallel of MTJ free layer direction of magnetization with MTJ pinned layer magnetization direction, MTJ can be divided into low resistive state and high-impedance state.As shown in Figure 3, in left figure, MTJ free layer is parallel with pinned layer magnetization direction, and MTJ is in low resistance state; MTJ free layer and pinned layer magnetization direction antiparallel in right figure, MTJ is in high-impedance state.In other words, change the direction of magnetization of ferromagnetic nanowires right-hand member, can the resistive state of control MTJ.When passing into MTJ read current I at the upper and lower two ends of MTJ
o, the resistive state of MTJ can be read.The resistive state C of MTJ is the output terminal of this logical device.
3, advantage and effect.This magnetic logic devices based on electric field controls, the advantage that there is low-power consumption He can at room temperature work; This device can complete " non-" logic function of single input, the logical operation function such as NAND, nondisjunction of dual input or multi input.
Accompanying drawing explanation
Fig. 1 is originally based on the three-dimensional structure schematic diagram of the magnetic logic devices of Stress Control.At wire piezoelectric material film overcentre, grow a ferromagnetic nano wire.This piezoelectric comprises and is not limited to the materials such as PMN-PT, PZT, and this ferrimagnet comprises and is not limited to ferro-cobalt boron, permalloy, the soft magnetic materials such as cobalt platinum multilayer film, ambrose alloy multilayer film.In the middle part of piezoelectric membrane, both sides are two groups of relative electrode B 1, B2, and level signal of its access is the input end of logical signal.In ferromagnetic nano wire left end upper horizontal face, by a conducting nanowires perpendicular to nano wire direction, as magnetic write end.Above the right-hand member of ferromagnetic nano wire, be barrier layer and the pinning layer of MTJ, ferromagnetic nano wire is as the free layer of MTJ simultaneously, and three layers form a MTJ jointly.The resistive state C of MTJ is the output terminal of this logical device.
Fig. 2 is originally based on the schematic diagram of DW in ferromagnetic nano wire in the magnetic logic devices of Stress Control.In figure, horizontal direction arrow represents ferromagnetic nano wire direction of magnetization herein.Wherein, the direction of magnetization in the middle part of ferromagnetic nano wire is contrary with two ends direction of magnetization, forms DW.
The schematic diagram of Fig. 3 when to be this be in different resistive state based on MTJ in the magnetic logic devices of Stress Control.In figure, horizontal direction arrow represents the direction of magnetization in MTJ pinning layer and free layer, and the representative of vertical direction arrow is by the read current I of MTJ
o.
Fig. 4 is this based on the magnetic logic devices of Stress Control when realizing " rejection gate " logic, is in state residing in step 1 " logical device initialization ".Electric signal all in figure all disconnects, and whole device is in level externally-applied magnetic field H to the right.
Fig. 5 is this based on the magnetic logic devices of Stress Control when realizing " rejection gate " logic, the state residing for being in step 2 " logic state replacements ".The opening and closing of its electric signal, as shown in figure breaker in middle state, is namely connected and is controlled electric current I
c, disconnect other electric signal.
Fig. 6 is this based on the magnetic logic devices of Stress Control when realizing " rejection gate " logic, the state residing for being in step 3 " DW generations ".The opening and closing of its electric signal, as shown in figure breaker in middle state, namely connects magnetic write end electric current I
w, disconnect other electric signal.
Fig. 7 is this based on the magnetic logic devices of Stress Control when realizing " rejection gate " logic, the state residing for being in step 4 " signal input ".The opening and closing of its electric signal, as shown in figure breaker in middle state, is namely connected and is controlled electric current I
c, connect the incoming level of electrode B 1, B2, disconnect other electric signal.
Fig. 8 is this based on the magnetic logic devices of Stress Control when realizing " rejection gate " logic, the state residing for being in step 5 " signal outputs ".The opening and closing of its electric signal, as shown in figure breaker in middle state, namely connects MTJ read current I
o, disconnect other electric signal.
Fig. 9 is this based on the magnetic logic devices of Stress Control when realizing " not gate " logic, is in state residing in step 1 " logical device initialization ".Electric signal all in figure all disconnects, and whole device is in level externally-applied magnetic field H to the right.
Figure 10 is this based on the magnetic logic devices of Stress Control when realizing " not gate " logic, the state residing for being in step 2 " logic state replacements ".The opening and closing of its electric signal, as shown in figure breaker in middle state, is namely connected and is controlled electric current I
c, disconnect other electric signal.
Figure 11 is this based on the magnetic logic devices of Stress Control when realizing " not gate " logic, the state residing for being in step 3 " DW generations ".The opening and closing of its electric signal, as shown in figure breaker in middle state, namely connects magnetic write end electric current I
w, disconnect other electric signal.
Figure 12 is this based on the magnetic logic devices of Stress Control when realizing " not gate " logic, the state residing for being in step 4 " signal input ".The opening and closing of its electric signal, as shown in figure breaker in middle state, is namely connected and is controlled electric current I
c, connect the incoming level of electrode B 1, disconnect other electric signal.
Figure 13 is this based on the magnetic logic devices of Stress Control when realizing " not gate " logic, the state residing for being in step 5 " signal outputs ".The opening and closing of its electric signal, as shown in figure breaker in middle state, namely connects MTJ read current I
o, disconnect other electric signal.
Embodiment
This section will with the present invention, and namely based on the magnetic logic devices of Stress Control, the step when realizing " rejection gate " and " not gate " logical operation is example, describes working method of the present invention in detail.
In this section agreement, when the incoming level signal U of electrode (B1 or B2) is high level, system logic is input as " 1 "; When electrode disconnects input electrical signal or incoming level U is low level, system logic is input as " 0 ".When MTJ presents high magnetic resistance state, system logic exports as " 1 "; When MTJ presents low magnetic resistance state, system logic exports as " 0 ".
When this logical device be input as " 0 " time, the electric field intensity between input terminal electrode and its counter electrode is zero.Now, in control electric current I
cdriving under, the DW in ferromagnetic nano wire, can accessible propagation in ferromagnetic nano wire.But when the input end of logical device has at least one not to be " 0 ", the electric field intensity between input terminal electrode and its counter electrode is non-vanishing.Under electric field action, the piezoelectric material film generation deformation between electrode pair, and deformation is conducted to the ferromagnetic nano wire above it.Due to magnetostrictive effect, the deformation of ferromagnetic nano wire causes its inner magnetic moment arrangement to change, and form the pinning effect to DW, DW moves and will be hindered, and cannot pass through this region.Now, electric current I is controlled
cdW in ferromagnetic nano wire cannot be driven freely by electrode group.
In other words, first this logical device has inverse magnetization directions magnetic domain, then by control electric current I in the generation of magnetic write end
cdrive the movement of DW.If when input end two inputs are " 0 ", the spin of the free layer of output terminal MTJ overturns.MTJ becomes high-impedance state from low resistance state, and the output of MTJ is " 1 "; Otherwise when input end is input as " 1 ", MTJ state can not change, export as " 0 ".Thus complete complete logical operation.
See Fig. 1-Fig. 3, Fig. 1 is originally based on the three-dimensional structure schematic diagram of the magnetic logic devices of Stress Control; Fig. 2 is originally based on the schematic diagram of DW in ferromagnetic nano wire in the magnetic logic devices of Stress Control; The schematic diagram of Fig. 3 when to be this be in different resistive state based on MTJ in the magnetic logic devices of Stress Control.
Part I, realizes " rejection gate " logical operation.
Step 1, logical device initialization.As shown in Figure 4, disconnect all electric signal, namely disconnect and control electric current I
c, magnetic write end electric current I
w, B1 and B2 is without incoming level signal, and MTJ is without read current I
o.An additional enough large level magnetic field H to the right, make the direction of magnetization of ferromagnetic nano wire identical with the direction of magnetization of MTJ pinning layer, namely parallel film to the right.Now the pinning layer of MTJ is parallel with free layer direction of magnetization, and MTJ is in low resistance state.
Step 2, logic state resets.As shown in Figure 5, disconnect the electric signal that other are all, pass into the control electric current I of long enough time, enough high current densities
c, make ferromagnetic nano wire be in single domain state, the parallel film of direction of magnetization to the right.
Step 3, DW generates.As shown in Figure 6, disconnect the electric signal that other are all, magnetic write end pass into one from bottom to top, the electric pulse I of enough high current densities
w, the direction of magnetization that magnetic is write in the ferromagnetic nano wire rectifying below is reversed, and direction of magnetization level is left, contrary with the magnetic moment direction of other parts of ferromagnetic nano wire, forms DW.
Step 4, logical signal inputs.As shown in Figure 7, disconnect the electric signal that other are all, electrode B 1 and B2 keep connecting incoming level signal, pass into the electric pulse I of a suitable duration, suitably intensity
c, make DW under clog-free equal conditions, under the driving of this electric current, just can arrive the free layer region below MTJ pinning layer.
Step 5, logical signal exports.As shown in Figure 8, disconnect the electric signal that other are all, connect the reading electric current I of MTJ
o, read the resistive state of MTJ.If accessible, namely the incoming level of B1 and B2 is " 0 ", and left, with the direction antiparallel of MTJ pinning layer, MTJ is high-impedance state to the direction of magnetization level of MTJ free layer, and system exports " 1 "; Otherwise when there being high level to input, MTJ free layer keeps direction of magnetization to the right parallel, and parallel with MTJ pinning layer, MTJ remains low resistive state, and system exports as " 0 ".
Step 2 ~ 5 are repeated when Logic judgment.
Its input and output logical relation is as following table.
C=B1NOR B2 can be found out.
Part II, realizes " not gate " logical operation.
Step 1, logical device initialization.As shown in Figure 9, disconnect all electric signal, namely disconnect and control electric current I
c, magnetic write end electric current I
w, B1 is without input signal, and MTJ is without read current I
o.An additional enough large level magnetic field H to the right, make the direction of magnetization of ferromagnetic nano wire identical with the direction of magnetization of MTJ pinning layer, namely parallel film to the right.Now the pinning layer of MTJ is parallel with free layer direction of magnetization, and MTJ is in low resistance state.
Step 2, logic state resets.As shown in Figure 10, disconnect the electric signal that other are all, pass into the control electric current I of long enough time, enough high current densities
c, make ferromagnetic nano wire be in single domain state, the parallel film of direction of magnetization to the right.
Step 3, DW generates.As shown in figure 11, disconnect the electric signal that other are all, magnetic write end pass into one from bottom to top, the electric pulse I of enough high current densities
w, the direction of magnetization that magnetic is write in the ferromagnetic nano wire rectifying below is reversed, and direction of magnetization level is left, contrary with the magnetic moment direction of other parts of ferromagnetic nano wire, forms DW.
Step 4, logical signal inputs.As shown in figure 12, disconnect the electric signal that other are all, electrode B 1 keeps connecting input signal, passes into the electric pulse I of a suitable duration, suitably intensity
c, make DW under clog-free equal conditions, under the driving of this electric current, just can arrive the free layer region below MTJ pinning layer.
Step 5, logical signal exports.As shown in figure 13, disconnect the electric signal that other are all, connect the reading electric current I of MTJ
o, read the resistive state of MTJ.If accessible, namely B1 incoming level is " 0 ", and left, with the direction antiparallel of MTJ pinning layer, MTJ is high-impedance state to the direction of magnetization level of MTJ free layer, and system exports " 1 "; Otherwise when B1 incoming level is " 1 ", MTJ free layer keeps direction of magnetization to the right parallel, and parallel with MTJ pinning layer, MTJ remains low resistive state, and system exports as " 0 ".
Step 2 ~ 5 are repeated when Logic judgment.
Its input and output logical relation is as following table.
| Input state | Output state |
| B1 | C |
| 0 | 1 |
| 1 | 0 |
C=B1 ' can be found out.
In addition, designed by peripheral control circuits, patent of the present invention also can realize the logical operations such as non-conjunction.
Claims (1)
1. the novel magnetic logic devices based on Stress Control, it is characterized in that: it is composite multi-layer membrane structure, at wire piezoelectric material film overcentre, grow a ferromagnetic thin film nano wire, be two groups of relative electrode B 1, B2 in the middle part of bottom piezoelectric membrane, as the input end of logic signal levels U; In ferromagnetic nano wire left end upper horizontal face, by a conducting nanowires perpendicular to nano wire direction, as magnetic write end; Pulse current I
wchanged the direction of magnetization of ferromagnetic nano wire below it by the oersted field energy produced during conducting nanowires, and then produce neticdomain wall in ferromagnetic nano wire; Control electric current I is passed in ferromagnetic nano wire
c, drive neticdomain wall to move along direction of current; Above the right-hand member of ferromagnetic nano wire, be barrier layer and the pinning layer of MTJ MTJ, ferromagnetic nano wire is as the free layer of MTJ simultaneously; The nano-multilayer film being similar to sandwich structure of two-layer ferromagnetic material and free layer and pinning layer sandwich one deck insulator and barrier layer formation is the core texture of MTJ; Due to the spin properties of electronics, under the effect of electron tunneling transport property, according to the parallel or antiparallel of MTJ free layer direction of magnetization with MTJ pinned layer magnetization direction, MTJ is divided into low resistive state and high-impedance state; In other words, change the direction of magnetization of ferromagnetic nanowires right-hand member, can the resistive state of control MTJ; When passing into MTJ read current I at the upper and lower two ends of MTJ
o, the resistive state of MTJ can be read; The resistive state C of MTJ is the output terminal of this logical device.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN105552214A (en) * | 2015-12-09 | 2016-05-04 | 中电海康集团有限公司 | Vertical-magnetization magneto-resistance random access memory |
| CN106533431A (en) * | 2016-11-03 | 2017-03-22 | 南京大学 | Low energy consumption metal-based logic circuit |
| CN109308924A (en) * | 2018-08-10 | 2019-02-05 | 复旦大学 | A kind of calculating device and its calculation method |
| CN109959882A (en) * | 2017-12-22 | 2019-07-02 | 北京航空航天大学青岛研究院 | Measurement Method for Magnetic Field and magnetic sensor based on the movement of neticdomain wall invertibity |
| CN110176534A (en) * | 2019-06-03 | 2019-08-27 | 西安交通大学 | Adjustable tunneling junction magnetoresistive sensor of measurement range and preparation method thereof |
| CN112002361A (en) * | 2020-08-03 | 2020-11-27 | 中国计量大学 | Magnetic domain wall writing unit and method based on multiferroic heterostructure |
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| CN105552214A (en) * | 2015-12-09 | 2016-05-04 | 中电海康集团有限公司 | Vertical-magnetization magneto-resistance random access memory |
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| CN110176534A (en) * | 2019-06-03 | 2019-08-27 | 西安交通大学 | Adjustable tunneling junction magnetoresistive sensor of measurement range and preparation method thereof |
| CN112002361A (en) * | 2020-08-03 | 2020-11-27 | 中国计量大学 | Magnetic domain wall writing unit and method based on multiferroic heterostructure |
| CN112002361B (en) * | 2020-08-03 | 2022-06-24 | 中国计量大学 | Magnetic domain wall writing unit and method based on multiferroic heterostructure |
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