CN212783508U - Stress regulation and control unit structure with spin wave transmission characteristics - Google Patents
Stress regulation and control unit structure with spin wave transmission characteristics Download PDFInfo
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- CN212783508U CN212783508U CN202021312022.9U CN202021312022U CN212783508U CN 212783508 U CN212783508 U CN 212783508U CN 202021312022 U CN202021312022 U CN 202021312022U CN 212783508 U CN212783508 U CN 212783508U
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Abstract
The utility model discloses a stress regulation and control unit structure of spin wave transmission characteristic, including control layer, top electrode, bottom electrode layer and spin wave guiding layer, top electrode and spin wave guiding layer set up at the control layer upper surface, and the bottom electrode layer sets up at the control layer lower surface, and the control layer is ferroelectric or piezoelectric film. The utility model discloses can change through the magnetic anisotropy's of electric field control spin wave waveguide continuity, can high-efficient, realize fast that the magnetic current reaches the local accurate control of spin wave transmission characteristic, provide probably for ultralow consumption and the compatible magnon device practical application of traditional CMOS process flow.
Description
Technical Field
The utility model relates to a spin electron technical field, more specifically relates to a stress regulation and control unit structure from spin wave transmission characteristic.
Background
With the development of spintronics, it has become possible for spin logic devices to replace conventional cmos devices in terms of information storage and computation, and for example, the invention of application No. CN201610553896.5 discloses a method for controlling spin wave transmission, which can effectively change the intensity of the internal exchange action of a magnetic waveguide material by applying an electric field to the spin wave waveguide structure. The exchange constant is controlled by the electric field, so that the aim of controlling spin wave transmission by regulating and controlling the spin wave dispersion relation can be fulfilled. Because the propagation and movement of spin waves can theoretically achieve the generation of afocal heat, the method has inherent advantages in the era of large-scale integrated circuits, and due to the characteristics, higher information storage unit density, faster logic operation speed and more energy-saving spin information manipulation become possible under the development of spintronics.
Spin is an intrinsic property of a particle, and is an inherent angular momentum, and the angular momentum is an observable, specifically observation of the phase and amplitude of spin waves, which makes it possible to manipulate spin signals for information storage and computation. In recent years, many logic devices based on spin wave amplitude and phase encoding appear in information calculation from the spintronics, but most of the logic devices rely on strong magnetic fields generated by electrified current carrying wires for regulation.
When a traditional direct current generates a strong magnetic field, a current-carrying wire is generally vertically placed at the top of a spin wave waveguide, the strong magnetic field is generated nearby through the current in the wire, and then the spin wave in the waveguide is encoded by the coupling effect of microwaves and spin electrons in a ferromagnetic material. However, with the development of scientific technology and the requirement for miniaturization and integration of memory and logic devices, the information coding technology based on current-carrying lines has some inherent disadvantages. For example: the angle of a magnetic field surrounding a current-carrying wire is changed constantly, the intensity of the magnetic field is changed from strong to weak from inside to outside, and the control precision is not high due to the heterogeneity of the magnetic field distribution; the strong magnetic field means that a larger current is required and causes larger energy consumption; the existence of current-carrying lines is also not beneficial to the integration and miniaturization of the device. Therefore, the spintronic device with high design speed, low power consumption and simple structure and operation method remains a technical difficulty in the field of spinning.
SUMMERY OF THE UTILITY MODEL
To the inherent high energy consumption of traditional technique, the complicated scheduling problem of structure based on circular telegram current-carrying line produces the spin of magnetic field regulation and control, the utility model provides a spin wave transmission characteristic's stress regulation and control unit structure can be through the magnetic anisotropy's of electric field control spin wave waveguide change, can high-efficient, realize fast that the local accurate control to spin wave transmission characteristic provides probably for ultralow consumption and the compatible magnon device practical application of traditional CMOS process flow.
The technical scheme of the utility model is as follows.
A stress regulation and control unit structure with spin wave transmission characteristics comprises a control layer, a top electrode, a bottom electrode layer and a spin wave waveguide layer, wherein the top electrode and the spin wave waveguide layer are arranged on the upper surface of the control layer, the bottom electrode layer is arranged on the lower surface of the control layer, and the control layer is a ferroelectric or piezoelectric film.
The utility model discloses utilized electrostrictive effect and reverse magnetostrictive effect, through the transmission characteristic of applying voltage control spin ripples to the control layer, wherein the control layer takes place interface coupling with spin ripples waveguide layer to conduction stress is met an emergency, thereby changes the transmission characteristic of spin ripples and reaches the purpose of coding information.
Preferably, the number of the top electrodes is even, and the top electrodes are symmetrically distributed on two sides of the spin wave waveguide layer.
Preferably, the top electrode is a single electrode, crosses the spin-wave waveguide layer, and is in contact with the control layer on both sides of the spin-wave waveguide layer. In theory, the electric field can be applied in any direction, but the modulation effect is most pronounced when the electric field is perpendicular to the plane of the spin waveguide.
By applying an electric field, the control layer is deformed and thus transferred into the spin-wave waveguide layer, causing a change in magnetic anisotropy in the waveguide and thus controlling the transmission characteristics of the spin wave through the waveguide. Therefore, the technical problems of complex structure, high energy consumption, low integration level, low system reliability and the like of the traditional magnetic field coding technology are solved.
Specifically, as the positive voltage between the applied electrode and the bottom layer deformation film is gradually increased, the amplitude of the spin wave is weakened until the spin wave is turned off, and the switching effect of the spin wave transmission characteristic can be realized; on the contrary, with the gradual increase of the applied opposite voltage, the amplitude of the spin wave passing through the control region is correspondingly increased, so that the amplification effect of the spin wave amplitude can be realized. Therefore, the propagation parameter of the spin wave changes with the change of the electric field intensity, and the mechanical regulation and control by utilizing the electrostrictive effect and the inverse magnetostrictive effect can be used for realizing the control of the transmission characteristic of the spin wave.
Preferably, the spin-wave guide layer is made of a ferromagnetic material or a multiferroic material as a spin-wave transmission medium.
Preferably, the control layer is in the form of a film.
Preferably, the solar cell further comprises a protective layer wrapped on the outer side, and a substrate layer is further arranged below the bottom electrode layer.
The utility model discloses a spin amplitude and the phase place of ripples are revolved in voltage control realize spin information coding. The regulation and control of spin wave transmission characteristics are realized through a single regulation and control unit, the dynamic regulation and control of the NOR logic function can be realized through the series-parallel connection of a plurality of regulation and control units, and a regulation and control unit is provided for a spin logic device. Furthermore, the utility model discloses heat loss and static consumption problem can effectively be solved. Traditionally, the transmission characteristics of spin waves in a spin wave waveguide are regulated and controlled by generating an Oersted field by current, and in the working process of the whole device, the current continuously flows through a wire to generate a large amount of Joule heat; in the electric field control mode, the charge-discharge power consumption of a two-pole capacitor in the control state switching process is eliminated, and the control unit almost has zero power consumption, so that the problems of high energy consumption and low efficiency inherent in the traditional magnetic field control can be solved by controlling the spin wave transmission characteristic through an electric field.
Drawings
Fig. 1 is a schematic structural diagram of a typical stress control unit according to the present invention;
fig. 2 is a schematic structural diagram of another typical stress control unit according to the present invention;
fig. 3 is a schematic structural diagram of an elongated waveguide based on spin wave propagation in CoFeB (CoFeB) according to embodiment 2 of the present invention;
fig. 4 is a stress distribution diagram of the waveguide with the regulating unit structure proposed in embodiment 2 of the present invention under the action of +0.7V voltage;
FIG. 5 shows the magnetic moment component m of the waveguide with the structure of the regulating unit proposed in embodiment 2 under the action of +0.7V voltagexA profile of the dynamic response at a time;
fig. 6 is a diagram of the relationship between the spin wave propagation amplitude and the position of the waveguide with the structure of the control unit proposed in embodiment 2 of the present invention under the action of +0.7V voltage;
fig. 7 is a structural diagram of four typical logic devices proposed in embodiment 3 of the present invention;
the figure includes: 1-control layer, 2-top electrode, 5-bottom electrode layer, 6-substrate layer, 7-spin wave waveguide layer and 8-protective layer.
Detailed Description
The technical solution of the present application will be described with reference to the following examples. In addition, numerous specific details are set forth below in order to provide a better understanding of the present invention. It will be understood by those skilled in the art that the present invention may be practiced without some of these specific details. In some instances, methods, means, elements and circuits that are well known to those skilled in the art have not been described in detail so as not to obscure the present invention.
Example 1:
the embodiment provides a stress regulation unit structure with spin wave transmission characteristics, which regulates and controls related characteristics such as spin wave phase and amplitude so as to be applied to a spin electronic device to realize multiple logic functions. As shown in fig. 1, the modulation unit is composed of a substrate layer 6, a spin wave guide layer 7, a bottom electrode layer 5, a control layer 1, a top electrode 2, and a protective layer 8. The figures are schematic diagrams, wherein the sizes, thicknesses and non-actual dimensions of the functional layers are related, and the materials can be selected in various ways according to actual requirements.
The utility model provides a regulation and control unit structure can be applied to various spin wave waveguide structures, and is decided according to concrete application, and unit structure's size is not restricted. Most of the waveguide materials are ferromagnetic materials with magnetostrictive effect, and can be selected from, but not limited to, the following materials: permalloy (Permalloy), cobalt (Co), cobalt iron boron (CoFeB), Yttrium Iron Garnet (YIG), and the like. The function of the material is to provide a material base for the transmission of spin waves and to control the direction of the spin waves.
The utility model discloses in, utilize the electrostrictive effect of control layer and the magnetostrictive reverse effect of spin wave guiding layer to reach the control of spin wave phase place, characteristics such as wave amplitude through applying the electric field. Coplanar waveguides are used here, a more typical configuration of which is shown in fig. 1. The regulating unit comprises a substrate layer, a spin wave waveguide layer, a bottom electrode, a control layer, a top electrode layer and a protective layer. It should be noted that, in the structure example shown in fig. 1, the shape, thickness, planar position of each functional layer and the number and relative positions of the electrodes are not limited to the case described in this example, and other structures by increasing the number of coplanar waveguides on the transmission medium are included in the functional structure described in the present invention.
The top electrode layer is composed of two electrodes distributed on two sides of the electrostrictive layer, and the bottom electrode is formed under the control layer, and the material of the bottom electrode can be selected from but not limited to the following metal materials: gold (Au), platinum (Pt), copper (Cu), aluminum (Al), tantalum (Ta), and the like.
The top electrode layer may also be formed of a single electrode spanning the spin-wave waveguide layer, as shown in FIG. 2, in contact with the bottom control layer on both sides thereof.
The shape of the control layer is not limited to a film but may be other shapes, and the functions described in the present invention may be completed. The material may be selected from, but is not limited to, the following ferroelectric materials: barium Titanate (Barium Titanate, BaTiO)3) Lead Zirconate Titanate (Lead Titanate is also known as Lead Titanate)Is PZT, Pb (Zr)1-xTix)O3) Triglycine sulfate (TGS), zinc oxide (ZnO), zinc sulfide (ZnS), aluminum nitride (AlN), piezoelectric single crystal, and the like. The thickness of the control layer can range from nanoscale to microscale, with the specific thickness being dependent on the performance requirements of the conditioning unit.
Example 2
This embodiment specifically illustrates the structure, function and application of the present invention by taking a device unit structure based on the propagation of spin wave in cobalt-iron-boron (CoFeB) as an example. Referring to fig. 3, a typical structural embodiment of the present invention is shown: an elongated spin wave waveguide.
In this example, the host structure for modulating spin wave transmission characteristics used a cobalt iron boron (CoFeB) material with a length of 2000nm, a width of 100nm, and a thickness of 0.8 nm. The propagation mode of the spin wave is a forward bulk wave, i.e., a mode in which the propagation direction of the spin wave is perpendicular to the direction of the magnetic field. The bottom is a control layer, the upper part is a spin wave waveguide layer, and the top double electrodes are made of conductive material copper (Cu) and are symmetrically arranged on two sides of the magnetic material. The control layer adopts a piezoelectric material of lead zirconate titanate ceramic PZT.
Functionally, this example can be used to realize the modulation of the single-channel spin wave amplitude, fig. 4 is a stress distribution diagram generated by the spin wave waveguide layer under a voltage of +0.7V, under the action of symmetric dual electrodes, it can be seen that a relatively uniform stress variation is generated in the waveguide material modulation region, and the purpose of controlling the spin wave transmission characteristics can be achieved by a relatively large variation amplitude.
The following proves the technical effect of the embodiment, the micro-magnetic simulation is performed by using MuMax3 simulation software based on the LLG equation, and the adjustment and control effect of the stress strain is equivalent to the change of the uniaxial magnetic anisotropy K of the material due to the lack of the anisotropy direct action module caused by deformation in the MuMax3uAnd modeled using the following effective fields:
wherein Ku1And Ku2Is the first and second order uniaxial anisotropy constant, MsatIs the saturation magnetization, and u and m are the unit vectors in the anisotropy and magnetization directions, respectively. The higher order anisotropy change is negligible, i.e. K u20, the effective field due to the applied external uniaxial stress σ is
Wherein
Is the saturation magnetostriction, σ is the external stress, and s is the unit vector applied in the direction of the stress. To simulate the effect of uniaxial stress applied in the same direction as the uniaxial anisotropy, HanisAnd HstressProceed analogy to obtain Ku1The values of (a) are as follows:
stress calculation Using a model as shown in FIG. 3, a voltage of 0.7V was applied in the negative Z-axis direction. The stress distribution of the control region of magnetic material calculated using finite element simulation software is shown in fig. 4.
The stress change is equivalent to the change of perpendicular magnetic anisotropy through the formula and is substituted into MuMax3, the magnitude of the spin wave amplitude is regulated and controlled by the simulated electric field, and the regulation and control result is shown in FIG. 5. It can be seen from fig. 5 that the amplitude of the spin wave in the stripe space becomes small and cannot even propagate through the control region. Magnetization m on drawn strip middle nanowire1The distribution curve is shown in fig. 6, and it can be seen from the amplitude change of the relevant magnetic moment that the spin wave transmission is turned off at the regulation position.
Therefore, the stress regulating unit based on the transmission characteristics of the spin wave provided by the utility model can effectively regulate and control the amplitude of the spin wave, so that the transmission of the spin wave can be effectively controlled by the external electric field.
Example 3
Referring to fig. 7, four exemplary logic application embodiments of the present invention are shown: the single channel logic structure, single channel series logic structure, binary channels parallel logic structure, binary channels series-parallel logic structure, what need explain here is: 1. the present embodiment is not limited to be used in the above logic structure, and there may be more branches and combinations of the control unit, and 2, a single control unit may adjust multiple functions, such as amplitude and phase of a spin wave, through a voltage. To implement more complex logic computation functions.
This logic device is based on the utility model provides a structure, the stress regulation and control unit structure that a spin wave transmission characteristic promptly and spin the wave transmission channel and constitute jointly. The utility model provides a stress regulation and control unit can regulate and control spin wave parameters such as amplitude of wave, phase place of spin wave effectively, and the collocation spin wave waveguide constitutes logic device jointly. When the logic device works, the spin wave signal can be regulated and controlled only by applying an electric field.
The logic device has the following steps of spin wave propagation in a waveguide channel, stress regulation and control unit structure regulation and control, and spin wave interference between waveguides. Taking a logic device c in fig. 7 as an example, the logic device is a typical Y-shaped dual-input single-output waveguide structure, a stress regulation unit is respectively arranged on two input channels, spin waves propagate from left to right, the amplitude of the spin waves is regulated and controlled at the stress regulation unit, forward voltage is applied to a single waveguide branch to regulate the spin waves to be turned off, and the spin waves pass through without obstacles and interfere with each other at the intersection point of the Y-shaped device channels, or are superposed and enhanced, or collide and annihilate. Thereby realizing the logic function of the nand gate.
Through the description of the above embodiments, those skilled in the art will understand that, for convenience and simplicity of description, only the division of the above functional modules is used as an example, and in practical applications, the above function distribution may be completed by different functional modules according to needs, that is, the internal structure of a specific device is divided into different functional modules to complete all or part of the above described functions. The disclosed structures and methods may be implemented in other ways. In addition, the shown or discussed mutual coupling or direct coupling or communication connection may be an indirect coupling or communication connection through some interfaces, structures or units, and may be in an electrical, mechanical or other form.
Units described as separate parts may or may not be physically separate, and parts displayed as units may be one physical unit or a plurality of physical units, may be located in one place, or may be distributed to a plurality of different places. Some or all of the units can be selected according to actual needs to achieve the purpose of the solution of the embodiment.
The above description is only for the specific embodiments of the present application, but the scope of the present application is not limited thereto, and any person skilled in the art can easily conceive of the changes or substitutions within the technical scope of the present application, and shall be covered by the scope of the present application. Therefore, the protection scope of the present application shall be subject to the protection scope of the claims.
Claims (6)
1. The stress regulation and control unit structure is characterized by comprising a control layer, a top electrode, a bottom electrode layer and a spin wave waveguide layer, wherein the top electrode and the spin wave waveguide layer are arranged on the upper surface of the control layer, the bottom electrode layer is arranged on the lower surface of the control layer, and the control layer is a ferroelectric or piezoelectric film.
2. The structure of claim 1, wherein the number of the top electrodes is an even number and symmetrically distributed on two sides of the spin-wave waveguide layer.
3. The structure of claim 1, wherein the top electrode is a single electrode, and is extended across the spin-wave waveguide layer, and is in contact with the control layer on both sides of the spin-wave waveguide layer.
4. A spin-wave transmission-characteristic stress modulating cell structure according to claim 1, 2 or 3, wherein the spin-wave guiding layer is made of a ferromagnetic material or a multiferroic material as a spin-wave transmission medium.
5. The structure of claim 1, wherein the control layer is a thin film.
6. The structure of claim 1, further comprising a protective layer wrapped on the outside, and a substrate layer under the bottom electrode layer.
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| CN111864061A (en) * | 2020-07-07 | 2020-10-30 | 中国计量大学 | Stress regulation and control unit structure and method for spin wave transmission characteristics |
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| CN111864061A (en) * | 2020-07-07 | 2020-10-30 | 中国计量大学 | Stress regulation and control unit structure and method for spin wave transmission characteristics |
| CN111864061B (en) * | 2020-07-07 | 2022-10-04 | 中国计量大学 | Stress regulation and control unit structure and method for spin wave transmission characteristics |
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