CN104766621B - Stress control-based magnetic logic device - Google Patents
Stress control-based magnetic logic device Download PDFInfo
- Publication number
- CN104766621B CN104766621B CN201510188021.5A CN201510188021A CN104766621B CN 104766621 B CN104766621 B CN 104766621B CN 201510188021 A CN201510188021 A CN 201510188021A CN 104766621 B CN104766621 B CN 104766621B
- Authority
- CN
- China
- Prior art keywords
- mtj
- nano wire
- ferromagnetic
- magnetic
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1675—Writing or programming circuits or methods
Abstract
The invention discloses a novel stress control-based magnetic logic device. The magnetic logic device is of a composite multilayer film structure, a ferromagnetic film nano wire grows over the center of a linear piezoelectric material film, and two sets of opposite electrodes B1 and B2 are arranged in the middle of a bottom piezoelectric film to be used as input ends of a logic signal level U; in a horizontal plane over the left end of the ferromagnetic nano wire, a conductive nano wire perpendicular to the nano wire direction is used as a magnetic write-in end; an oersted field, generated when a pulse current Iw passes through the conductive nano wire, can change the magnetization direction of the ferromagnetic nano wire underneath, and consequently, a magnetic domain wall is generated in the ferromagnetic nano wire; and the ferromagnetic nano wire is electrified with a control current Ic so as to drive the magnetic domain wall to move along the current direction. The magnetic logic device provided by the invention is based on electric field control, and has the advantages of being low in power consumption and being capable of working at room temperature; and the magnetic logic device can finish a 'NOT' logic function of single input, and 'NAND', 'NOR' and other logic operation functions of dual input or multiple input.
Description
Technical field
The present invention relates to a kind of magnetic logic devices based on Stress Control.In piezoelectricity/ferromagnetic mixed structure, by inverse
Piezoelectric effect, piezoelectric substrate is deformed upon, and then is attached to the thin magnetic film of piezoelectric material surface and is also produced deformation therewith,
And the movement of control wherein neticdomain wall (Domain Wall, hereinafter abbreviated as DW), so as to carry out logical operationss.The present invention is suitable for
In any based on the multiferroic mixed structure such as piezoelectricity, ferromagnetism, ferroelasticity, control magnetic domain wall moving logic semiconductor device
Part.The invention belongs to the New kind logical component field in semiconductor device.
Background technology
Spin electric device is because of outstanding spies such as its is non-volatile, high-speed read-write, high density, high stability, long lives
Property, quickly grow at present, and it is generally considered most promising semiconductor device.At present, conventional spin
Electronic device needs larger operating current, and then there are problems that higher power dissipation.Turned using electric field controls magnetic domain wall moving, magnetic moment
It is dynamic, the function of self-spining device is realized, contribute to further reducing power consumption and raising integrated level.At present, electric field regulation and control from spigot
Part mainly has three classes：One is each come the interface for regulating and controlling the magnetic thin film being adjacent in the charge accumulation of interface by dielectric material
Anisotropy；Two is to control magnetic property by magneto-electric coupled using multi-iron material；Three are answered with ferromagnetic material using piezoelectric
Zoarium system, by stress changes magnetic property.For first kind device, dielectric material produce interface charge, the interfacial effect changes
Magnetic anisotropy in magnetic thin film.It is thick to the knots modification and thin magnetic film of magnetic anisotropy but the effect is confined to interface
Degree is inversely proportional to.Compared to second and third class system to the overall regulating power of thin magnetic film, the interfacial effect that first kind device is produced
Relative weak.Multi-iron material has various ferrum such as ferromagnetic and ferroelectricity in order simultaneously, but its is magneto-electric coupled very weak, and only exists
In low temperature environment, its application scenarios and development potentiality are greatly limited to.And for the 3rd class, i.e. piezoelectricity and ferromagnetic composite material
Device, has at present abundant experimental results and confirms, can be produced using the inverse piezoelectric effect of wherein piezoelectric at room temperature
The magnetic of stress changes wherein ferromagnetic material.The present invention is moved using composite piezoelectric and ferromagnetic material by electric field controls neticdomain wall
It is dynamic, realize super low-power consumption logical judgment.
The content of the invention
1st, purpose：It is an object of the invention to provide a kind of magnetic logic devices based on Stress Control, it passes through piezoelectricity, ferrum
Magnetic bilayer film composite construction, by the electric field change of input the deformation of thin film in this magnetic logic devices is converted into, and further
Thin film deformation is converted into into the heat treatment of ferromagnetic material, so as to realize electric field controls at room temperature, low-power logic device
Part, completes the logical operationss to the signal of telecommunication.
2nd, technical scheme：The present invention is a kind of magnetic logic devices based on Stress Control, is composite multi-layer membrane structure.This
The space structure of device is as shown in Figure 1.In wire piezoelectric material film overcentre, a ferromagnetic thin film nano wire is grown
(hereinafter referred to as " ferromagnetic nano wire ").Bottom piezoelectric membrane middle part is two groups of relative electrode Bs 1, B2, used as logic signal levels
The input of U.In ferromagnetic nano wire left end upper horizontal face, by the conducting nanowires perpendicular to nano wire direction,
As being magnetically written end.Pulse current IwThe oersted field produced during by conducting nanowires can change ferromagnetic nanometer below
The direction of magnetization of line, and then neticdomain wall is produced in ferromagnetic nano wire.Control electric current I is passed through in ferromagnetic nano wirec, drive magnetic
Domain wall is moved along the sense of current.It is MTJ (Magnetic Tunnel above the right-hand member of ferromagnetic nano wire
Junction, hereinafter abbreviated as MTJ) barrier layer and pinning layer, while free layer of the ferromagnetic nano wire as MTJ.Two-layer ferrum
Magnetic material one layer of insulator of (i.e. free layer and pinning layer) sandwich (i.e. barrier layer) constitute similar to sandwich structure
Nano-multilayer film is the core texture of MTJ.Due to the spin properties of electronics, under the effect of electron tunneling transport property, according to MTJ
The parallel or antiparallel in the free layer direction of magnetization and MTJ pinned layer magnetizations direction, MTJ can be divided into low resistive state and high resistant shape
State.As shown in figure 3, MTJ free layers are parallel with pinned layer magnetization direction in left figure, MTJ is in low resistance state；MTJ freedom in right figure
Layer and pinned layer magnetization direction antiparallel, MTJ is in high-impedance state.In other words, the direction of magnetization of ferromagnetic nanowires right-hand member is changed,
Can control the resistive state of MTJ.When being passed through MTJ read current I in MTJ upper and lower endso, the resistive state of MTJ can be read.
The resistive state C of MTJ is the outfan of this logical device.
3rd, advantage and effect.This magnetic logic devices is based on electric field controls, can work with low-power consumption and at room temperature
Advantage；This device can complete the logics such as NAND, the nondisjunction of " non-" logic function of single input, dual input or multi input
Calculation function.
Description of the drawings
Fig. 1 is this three dimensional structure diagram based on the magnetic logic devices of Stress Control.In wire piezoelectric material film
Overcentre, grows a ferromagnetic nano wire.The piezoelectric includes and is not limited to the materials such as PMN-PT, PZT, the ferromagnetism material
Material includes and is not limited to the soft magnetic materials such as ferro-cobalt boron, permalloy, cobalt platinum multilayer film, ambrose alloy multilayer film.In the middle part of piezoelectric membrane
Both sides are two groups of relative electrode Bs 1, B2, and the level signal that it is accessed is the input of logical signal.In ferromagnetic nano wire left end
In upper horizontal face, by the conducting nanowires perpendicular to nano wire direction, as being magnetically written end.In ferromagnetic nano wire
Right-hand member top, be the barrier layer and pinning layer of MTJ, while free layer of the ferromagnetic nano wire as MTJ, three layers collectively constitute one
Individual MTJ.The resistive state C of MTJ is the outfan of this logical device.
Fig. 2 is this schematic diagram based on DW in ferromagnetic nano wire in the magnetic logic devices of Stress Control.Level side in figure
Represent ferromagnetic nano wire in the direction of magnetization herein to arrow.Wherein, the direction of magnetization in the middle part of ferromagnetic nano wire magnetizes with two ends
It is in opposite direction, form DW.
Fig. 3 is schematic diagram when different resistive states are originally in based on MTJ in the magnetic logic devices of Stress Control.In figure
Horizontal direction arrow represents MTJ pinning layers and the direction of magnetization in free layer, and vertical direction arrow represents the read current by MTJ
Io。
Fig. 4 is that this is based on magnetic logic devices of Stress Control when " nor gate " logic is realized, in step 1 " logic
State in which in device initialization ".The all of signal of telecommunication disconnects in figure, and whole device is in level externally-applied magnetic field to the right
In H.
Fig. 5 is that this is based on magnetic logic devices of Stress Control when " nor gate " logic is realized, in step 2 " logic
State in which in state replacement ".Control electric current I is connected in the opening and closing of its signal of telecommunication as shown in figure breaker in middle state, that is,c, disconnect
Other signals of telecommunication.
Fig. 6 is that this is based on magnetic logic devices of Stress Control when " nor gate " logic is realized, in step 3, " DW gives birth to
Into " in state in which.The opening and closing of its signal of telecommunication is connected as shown in figure breaker in middle state, that is, and is magnetically written end electric current Iw, disconnect
Other signals of telecommunication.
Fig. 7 is that this is based on magnetic logic devices of Stress Control when " nor gate " logic is realized, in step 4 " signal
State in which in input ".Control electric current I is connected in the opening and closing of its signal of telecommunication as shown in figure breaker in middle state, that is,c, connect electrode
The incoming level of B1, B2, disconnects other signals of telecommunication.
Fig. 8 is that this is based on magnetic logic devices of Stress Control when " nor gate " logic is realized, in step 5 " signal
State in which in output ".MTJ read current I are connected in the opening and closing of its signal of telecommunication as shown in figure breaker in middle state, that is,o, disconnect other
The signal of telecommunication.
Fig. 9 is that this is based on magnetic logic devices of Stress Control when " not gate " logic is realized, in step 1 " logic device
State in which in part initialization ".The all of signal of telecommunication disconnects in figure, and whole device is in level externally-applied magnetic field H to the right
In.
Figure 10 is that this is based on magnetic logic devices of Stress Control when " not gate " logic is realized, in step 2 " logic shape
State in which in state replacement ".Control electric current I is connected in the opening and closing of its signal of telecommunication as shown in figure breaker in middle state, that is,c, disconnect it
His signal of telecommunication.
Figure 11 is that this is based on magnetic logic devices of Stress Control when " not gate " logic is realized, in step 3, " DW gives birth to
Into " in state in which.The opening and closing of its signal of telecommunication is connected as shown in figure breaker in middle state, that is, and is magnetically written end electric current Iw, disconnect
Other signals of telecommunication.
Figure 12 is that this is based on magnetic logic devices of Stress Control when " not gate " logic is realized, in step 4, " signal is defeated
Enter " in state in which.Control electric current I is connected in the opening and closing of its signal of telecommunication as shown in figure breaker in middle state, that is,c, connect electrode B 1
Incoming level, disconnect other signals of telecommunication.
Figure 13 is that this is based on magnetic logic devices of Stress Control when " not gate " logic is realized, in step 5, " signal is defeated
Go out " in state in which.MTJ read current I are connected in the opening and closing of its signal of telecommunication as shown in figure breaker in middle state, that is,o, disconnect other
The signal of telecommunication.
Specific embodiment
This section will be patrolled with the present invention, the i.e. magnetic logic devices based on Stress Control in realization " nor gate " and " not gate "
As a example by the step of during volume computing, the working method of the present invention is described in detail.
In this section agreement, when the incoming level signal U of electrode (B1 or B2) is high level, system logic input is " 1 "；
When electrode disconnects input electrical signal or incoming level U is low level, system logic input is " 0 ".When MTJ is presented high magnetic resistance
During state, system logic is output as " 1 "；When MTJ is presented low magnetic resistance state, system logic is output as " 0 ".
When the input of this logical device is " 0 ", the electric field intensity between the corresponding electrode of input terminal electrode is zero.
Now, in control electric current IcDriving under, the DW in ferromagnetic nano wire can the accessible propagation in ferromagnetic nano wire.However,
When logical device input at least one be " 0 " when, the electric field intensity between the corresponding electrode of input terminal electrode is not
It is zero.Under electric field action, the piezoelectric material film between electrode pair is deformed upon, and ferromagnetic is received what deformation was conducted to above it
Rice noodle.Due to magnetostrictive effect, the deformation of ferromagnetic nano wire causes its internal magnetic moment arrangement to change, and forms the nail to DW
Bundle is acted on, and DW movements will be hindered, it is impossible to by the region.Now, control electric current IcCannot drive in ferromagnetic nano wire
DW is freely through electrode group.
In other words, this logical device has inverse magnetization directions magnetic domain being magnetically written end and produce first, then by controlling
Electric current IcDrive the movement of DW.If two inputs of input are " 0 ", the spin of the free layer of outfan MTJ is turned over
Turn.MTJ is changed into high-impedance state from low resistance state, and MTJ is output as " 1 "；Conversely, when it is " 1 " that input has input, MTJ states are not
Can change, be output as " 0 ".So as to complete complete logical operationss.
See that Fig. 1-Fig. 3, Fig. 1 are this three dimensional structure diagram based on the magnetic logic devices of Stress Control,；Fig. 2 is this
Schematic diagram based on DW in ferromagnetic nano wire in the magnetic logic devices of Stress Control；Fig. 3 is this magnetic based on Stress Control
In logical device MTJ in different resistive state when schematic diagram.
Part I, realizes " nor gate " logical operationss.
Step 1, logical device initialization.As shown in figure 4, disconnecting all of signal of telecommunication, that is, disconnect control electric current Ic, magnetic
Write end electric current Iw, without incoming level signal, MTJ is without read current I for B1 and B2o.Additional sufficiently large level magnetic field to the right
H, makes the direction of magnetization of ferromagnetic nano wire identical with the direction of magnetization of MTJ pinning layers, i.e., parallel thin film is to the right.The now nail of MTJ
Prick layer parallel with the free layer direction of magnetization, MTJ is in low resistance state.
Step 2, logic state resets.As shown in figure 5, disconnect other all of signals of telecommunication, enough long-times, enough are passed through
Control electric current I of high current densitycSo that ferromagnetic nano wire is in single domain state, and the parallel thin film of the direction of magnetization is to the right.
Step 3, DW is generated.As shown in fig. 6, disconnect other all of signals of telecommunication, one is passed through by under end is magnetically written
And on, the electric pulse I of enough high current densitieswSo that the direction of magnetization being magnetically written in the ferromagnetic nano wire for rectifying lower section
Invert, direction of magnetization level to the left, with the magnetic moment direction of ferromagnetic nano wire other parts conversely, forming DW.
Step 4, logical signal input.As shown in fig. 7, disconnecting other all of signals of telecommunication, electrode B 1 and B2 are remained up
Incoming level signal, is passed through appropriate duration, an electric pulse I for appropriate intensitycSo that DW under clog-free equal conditions,
The free layer region below MTJ pinning layers can be just reached under the driving of the electric current.
Step 5, logical signal output.As shown in figure 8, disconnecting other all of signals of telecommunication, the reading electric current of MTJ is connected
Io, read the resistive state of MTJ.If accessible, i.e. the incoming level of B1 and B2 is " 0 ", the direction of magnetization of MTJ free layers
To the left, the direction antiparallel with MTJ pinning layers, MTJ is high-impedance state to level, and system exports " 1 "；Conversely, working as has high level defeated
Enter, the MTJ free layers holding direction of magnetization is parallel to the right, and parallel with MTJ pinning layers, MTJ remains low resistive state, and system is output as
“0”。
The repeat step 2～5 in logical judgment.
Its input and output logical relation such as following table.
It can be seen that C=B1 NOR B2.
Part II, realizes " not gate " logical operationss.
Step 1, logical device initialization.As shown in figure 9, disconnecting all of signal of telecommunication, that is, disconnect control electric current Ic, magnetic
Write end electric current Iw, without input signal, MTJ is without read current I for B1o.Additional sufficiently large level magnetic field H to the right, makes ferromagnetic
The direction of magnetization of nano wire is identical with the direction of magnetization of MTJ pinning layers, i.e., parallel thin film is to the right.Now the pinning layer of MTJ with from
Parallel by the layer direction of magnetization, MTJ is in low resistance state.
Step 2, logic state resets.As shown in Figure 10, other all of signals of telecommunication are disconnected, enough long-times, foot is passed through
Control electric current I of enough high current densitiescSo that ferromagnetic nano wire is in single domain state, and the parallel thin film of the direction of magnetization is to the right.
Step 3, DW is generated.As shown in figure 11, other all of signals of telecommunication are disconnected, one is passed through by under end is magnetically written
And on, the electric pulse I of enough high current densitieswSo that the direction of magnetization being magnetically written in the ferromagnetic nano wire for rectifying lower section
Invert, direction of magnetization level to the left, with the magnetic moment direction of ferromagnetic nano wire other parts conversely, forming DW.
Step 4, logical signal input.As shown in figure 12, other all of signals of telecommunication are disconnected, electrode B 1 remains up input
Signal, is passed through appropriate duration, an electric pulse I for appropriate intensitycSo that DW, can be in the electricity under clog-free equal conditions
Just the free layer region below MTJ pinning layers is reached under the driving of stream.
Step 5, logical signal output.As shown in figure 13, other all of signals of telecommunication are disconnected, the reading electric current of MTJ is connected
Io, read the resistive state of MTJ.If accessible, i.e. B1 incoming levels are " 0 ", the direction of magnetization level of MTJ free layers to
A left side, the direction antiparallel with MTJ pinning layers, MTJ is high-impedance state, and system exports " 1 "；Conversely, when B1 incoming levels are " 1 "
When, the MTJ free layers holding direction of magnetization is parallel to the right, and parallel with MTJ pinning layers, MTJ remains low resistive state, and system is output as
“0”。
The repeat step 2～5 in logical judgment.
Its input and output logical relation such as following table.
| Input state | Output state |
| B1 | C |
| 0 | 1 |
| 1 | 0 |
It can be seen that C=B1 '.
Additionally, being designed by peripheral control circuits, patent of the present invention is also capable of achieving the logical operationss such as non-conjunction.
Claims (1)
1. a kind of magnetic logic devices based on Stress Control, it is characterised in that：It is composite multi-layer membrane structure, in wire piezoelectricity
Material film overcentre, one ferromagnetic thin film nano wire of growth is two groups of relative electrode Bs 1 in the middle part of bottom piezoelectric membrane,
B2, as the input of logic signal levels U；In ferromagnetic nano wire left end upper horizontal face, by one perpendicular to nanometer
The conducting nanowires in line direction, as being magnetically written end；Pulse current IwThe oersted field energy produced during by conducting nanowires
Change the direction of magnetization of ferromagnetic nano wire below, and then neticdomain wall is produced in ferromagnetic nano wire；Lead in ferromagnetic nano wire
Enter control electric current Ic, drive neticdomain wall to move along the sense of current；It is MTJ above the right-hand member of ferromagnetic nano wire
The barrier layer and pinning layer of MTJ, while free layer of the ferromagnetic nano wire as MTJ；Two-layer ferromagnetic material is free layer and pinning
Layer one layer of insulator of sandwich be barrier layer constitute the nano-multilayer film similar to sandwich structure be MTJ core knot
Structure；Due to the spin properties of electronics, under the effect of electron tunneling transport property, according to the MTJ free layers direction of magnetization and MTJ pinnings
The parallel or antiparallel of the layer direction of magnetization, MTJ point is low resistive state and high-impedance state；In other words, ferromagnetic nanowires are changed
The direction of magnetization of right-hand member, you can the resistive state of control MTJ；When being passed through MTJ read current I in MTJ upper and lower endso, MTJ can be read
Resistive state；The resistive state C of MTJ is the outfan of this logical device.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510188021.5A CN104766621B (en) | 2015-04-20 | 2015-04-20 | Stress control-based magnetic logic device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201510188021.5A CN104766621B (en) | 2015-04-20 | 2015-04-20 | Stress control-based magnetic logic device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104766621A CN104766621A (en) | 2015-07-08 |
| CN104766621B true CN104766621B (en) | 2017-04-26 |
Family
ID=53648402
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201510188021.5A Active CN104766621B (en) | 2015-04-20 | 2015-04-20 | Stress control-based magnetic logic device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN104766621B (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105552214B (en) * | 2015-12-09 | 2018-11-09 | 中电海康集团有限公司 | A kind of magneto-resistor random access memory of perpendicular magnetization |
| CN106533431A (en) * | 2016-11-03 | 2017-03-22 | 南京大学 | Low energy consumption metal-based logic circuit |
| CN109959882B (en) * | 2017-12-22 | 2021-04-02 | 北京航空航天大学青岛研究院 | Magnetic field measuring method based on reversible motion of magnetic domain wall and magnetic sensor |
| CN109308924B (en) | 2018-08-10 | 2021-01-01 | 复旦大学 | Computing device and computing method thereof |
| CN110176534A (en) * | 2019-06-03 | 2019-08-27 | 西安交通大学 | Adjustable tunneling junction magnetoresistive sensor of measurement range and preparation method thereof |
| CN112002361B (en) * | 2020-08-03 | 2022-06-24 | 中国计量大学 | Magnetic domain wall writing unit and method based on multiferroic heterostructure |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2005093835A1 (en) * | 2004-03-25 | 2005-10-06 | Renesas Technology Corp. | Magnetic storage |
| KR20070030741A (en) * | 2004-01-15 | 2007-03-16 | 도쿠리쓰교세이호징 가가쿠 기주쓰 신코 기코 | Current injection magnetic domain moving element |
| CN103276360A (en) * | 2013-06-14 | 2013-09-04 | 电子科技大学 | Magnetic nanowire array thin film and preparation method thereof |
-
2015
- 2015-04-20 CN CN201510188021.5A patent/CN104766621B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20070030741A (en) * | 2004-01-15 | 2007-03-16 | 도쿠리쓰교세이호징 가가쿠 기주쓰 신코 기코 | Current injection magnetic domain moving element |
| WO2005093835A1 (en) * | 2004-03-25 | 2005-10-06 | Renesas Technology Corp. | Magnetic storage |
| CN103276360A (en) * | 2013-06-14 | 2013-09-04 | 电子科技大学 | Magnetic nanowire array thin film and preparation method thereof |
Also Published As
| Publication number | Publication date |
|---|---|
| CN104766621A (en) | 2015-07-08 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104766621B (en) | Stress control-based magnetic logic device | |
| JP6219395B2 (en) | Magnetic memory device using in-plane current and electric field | |
| CN101834271B (en) | Magnetoelectric random storage unit and storage with same | |
| JP5461683B2 (en) | Magnetic memory cell and magnetic random access memory | |
| CN103794715B (en) | A kind of based on voltage-controlled magnetic memory | |
| CN107732005B (en) | Spin multi-gate device and logic circuit | |
| CN106449970B (en) | A kind of low-power consumption magnetic memory cell | |
| CN104778966B (en) | Nonvolatile logic gate circuit based on spin Hall effect magnetic tunnel junction | |
| US8848435B2 (en) | Magnetic resistance memory apparatus having multi levels and method of driving the same | |
| JP2006190954A (en) | Magnetoresistance memory for lowering inverted magnetic field by interlayer interaction | |
| JPWO2011004891A1 (en) | Magnetization reversal device, storage element, and magnetic field generation device | |
| CN102918649A (en) | Magnetic random access memory device and method for producing a magnetic random access memory device | |
| KR102302781B1 (en) | Spin Logic Device Based on Spin-Charge Conversion and Spin Logic Array | |
| JP2009252909A (en) | Magneto-resistive element, and magnetic random access memory | |
| US7208808B2 (en) | Magnetic random access memory with lower switching field | |
| CN105552214A (en) | Vertical-magnetization magneto-resistance random access memory | |
| CN108461101B (en) | Memory cell and memory | |
| CN105679358B (en) | Vertical-type spin-transfer torque magnetic RAM mnemon | |
| CN105633109A (en) | Magnetic random access memory memory-unit and read-write method and anti-interference method therefor | |
| KR101712725B1 (en) | 2-input Programmable Logic Element using single MTJ | |
| CN109524035B (en) | Memory cell, embedded memory and read-write method thereof | |
| KR101474665B1 (en) | Spin Transfer Torque Magnetic Tunnel Junction device, Operation Method thereof, and Magnetoresistive Random Access Memory including them | |
| CN113206190B (en) | Magnetization-switched magnetoelectric coupling device, storage unit, storage array and storage | |
| CN113921051A (en) | Magnetic racetrack storage unit | |
| KR101417956B1 (en) | Lateral spin device using spin torque |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| EXSB | Decision made by sipo to initiate substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |