CN104753493B - Fbar - Google Patents
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- CN104753493B CN104753493B CN201310726314.5A CN201310726314A CN104753493B CN 104753493 B CN104753493 B CN 104753493B CN 201310726314 A CN201310726314 A CN 201310726314A CN 104753493 B CN104753493 B CN 104753493B
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Abstract
The invention provides a kind of FBAR, including：Substrate, the substrate has cavity body structure；Lower electrode layer, the lower electrode layer forms on the substrate and covers at least partly described cavity body structure；The cavity body structure collectively constitutes cavity with the lower electrode layer；Piezoelectric layer, piezoelectric layer formation is on the lower electrode layer；Upper electrode layer, upper electrode layer formation is on the piezoelectric layer；Heat-conducting medium layer, the upper surface of the heat-conducting medium layer covering substrate, and contacted with least one formation in the lower electrode layer, the piezoelectric layer, the upper electrode layer three.Compared with traditional FBAR, FBAR provided by the present invention has more excellent power bearing ability on the premise of device area is not increased.
Description
Technical field
The present invention relates to resonator field, more particularly to a kind of FBAR.
Background technology
With the fast development and the continuous extension of user's request of wireless communication technique, handheld mobile communication product is
Promptly toward miniaturization and lighting development.Under normal circumstances, in handheld mobile communication product, relative to CMOS, GaAs
For active circuit based on technique, discrete passive device tends to take up bigger volume.The filter represented as passive device
Ripple device, particularly important role is play in the development tide of miniaturization.
At present, handheld mobile communication product mainly uses the wave filter made based on piezoelectric, wherein, constitute this height
The elementary cell of performance piezoelectric filter mainly includes FBAR（Film Bulk Acoustic
Resonator, FBAR）.Fig. 1 (a) and Fig. 1 (b) are refer to, wherein, Fig. 1 (a) is FBAR in the prior art
Cross-sectional view, Fig. 1 (b) is the overlooking the structure diagram of FBAR shown in Fig. 1 (a).As illustrated,
FBAR includes substrate 100, lower electrode layer 110, piezoelectric layer 120 and upper electrode layer 130 successively from bottom to up,
Wherein, further also there is the cavity structure 101 for reflection sound wave energy between substrate 100 and lower electrode layer 110.Its
In, effective work area of FBAR by upper electrode layer 130, lower electrode layer 110 and cavity structure 101 weight
Folded part is determined.Effective work area of FBAR shown in Fig. 1 (a) and Fig. 1 (b) is upper electrode layer 130.
It can be seen that the lower electrode layer 110 of FBAR crosses cavity structure 101, the purpose is to
Support is provided so as to make it not collapse to the film of FBAR using substrate 100, and otherwise, film bulk acoustic is humorous
Shake device film collapse encounter substrate 100 can greatly lose FBAR quality factor.Therefore, lower electrode layer
110 cross the distance of cavity structure 101（Represented in figure with D）Need the thickness, the film that consider lower electrode layer 110 should
The factors such as power, film resistor, the overall dimension of device.It is above-mentioned each meeting when being produced in batches to FBAR
The distance that lower electrode layer 110 crosses cavity structure 101 would generally be reduced on the premise of individual factor as far as possible, reached as far as possible with this
Reduce the purpose of device size.
Although the distance that reduction lower electrode layer 110 crosses cavity structure 101 can reach the purpose for reducing device size,
It is due to that contact area between lower electrode layer 110 and substrate 100 is very small, therefore is unfavorable for dissipating for FBAR
Heat.Particularly to FBAR increase power signal during, upper electrode layer 130, piezoelectric layer 120 and under
Electrode layer 110 can produce larger heat, will be in film bulk acoustic if the heat produced can not timely and effectively be spread apart
Heat accumulation effect is produced in resonator, so as to cause FBAR to burn.
In order to solve the above problems, existing way be by single FBAR be split as two series connection it is thin
Film body acoustic resonator, wherein, upper electrode layer, piezoelectric layer and the lower electrode layer of each FBAR after fractionation
Thickness keep it is constant.To keep effective work area of FBAR constant, each thin-film body sound after fractionation
Wave resonator area is twice of original single FBAR area, each film bulk acoustic after so splitting
The power density born on resonator is a quarter of original single FBAR, so as to improve thin-film body sound
The power bearing ability of wave resonator.But, the area sum of the FBAR of two fractionations is original single thin
Four times of film body acoustic resonator, have not only increased considerably the area of device, can also in batch production increase device into
This.
The content of the invention
In order to overcome drawbacks described above of the prior art, the invention provides a kind of FBAR, the film
Bulk acoustic wave resonator includes：
Substrate, the substrate has cavity body structure；
Lower electrode layer, the lower electrode layer forms on the substrate and covers at least partly described cavity body structure；
The cavity body structure collectively constitutes cavity with the lower electrode layer；
Piezoelectric layer, piezoelectric layer formation is on the lower electrode layer；
Upper electrode layer, upper electrode layer formation is on the piezoelectric layer；
Heat-conducting medium layer, the upper surface of the heat-conducting medium layer covering substrate, and with the lower electrode layer, the piezoelectricity
At least one in layer, the upper electrode layer three forms contact.
Compared with prior art, the present invention has advantages below：By forming heat-conducting medium layer, heat-conducting medium layer is made to cover
The upper surface of lid FBAR substrate and with the lower electrode layer, piezoelectric layer, upper electrode layer of FBAR
At least one in three forms contact so that on the premise of FBAR device area is not increased, effectively
The heat dispersion of FBAR is lifted, so as to improve the power bearing ability of FBAR, Jin Erkuo
The application field of big FBAR, such as microminiature communication base station, Satellite Communication System, military handheld terminal
Deng.
Brief description of the drawings
By reading the detailed description made to non-limiting example made with reference to the following drawings, of the invention is other
Feature, objects and advantages will become more apparent upon：
Fig. 1 (a) is the cross-sectional view of FBAR in the prior art；
Fig. 1 (b) is the overlooking the structure diagram of FBAR shown in Fig. 1 (a)；
Fig. 2 (a) is the cross-sectional view of the FBAR according to a specific embodiment of the invention；
Fig. 2 (b) is the overlooking the structure diagram of FBAR shown in Fig. 2 (a)；
Fig. 3 is the cross-sectional view of the FBAR according to another specific embodiment of the invention；
Fig. 4 is the cross-sectional view of the FBAR according to another specific embodiment of the invention；
Fig. 5 is the cross-sectional view of the FBAR according to another specific embodiment of the invention；
Fig. 6 is the cross-sectional view of the FBAR according to another specific embodiment of the invention；
Fig. 7 is the cross-sectional view of the FBAR according to another specific embodiment of the invention.
Same or analogous reference represents same or analogous part in accompanying drawing.
Embodiment
To make the object, technical solutions and advantages of the present invention clearer, make below in conjunction with to embodiments of the invention
It is described in detail.
Before the concrete structure of FBAR provided by the present invention is described, it is necessary to explanation
It is that Fig. 2 (a), Fig. 2 (b), the structure shown in Fig. 3 to Fig. 7 include two adjacent FBARs, are film respectively
Bulk acoustic wave resonator 1 and FBAR 2, it is intended to illustrate that adjacent FBAR can share heat conduction
Dielectric layer.Wherein, FBAR 1 includes substrate 200, lower electrode layer 210a, piezoelectric layer 220a and upper electrode layer
230a, FBAR 2 includes substrate 200, lower electrode layer 210b, piezoelectric layer 220b and upper electrode layer 230b.By
It is identical with the structure of FBAR 2 in FBAR 1, therefore, for brevity, hereinafter only
FBAR 1 in figure is illustrated.
Fig. 2 (a), Fig. 2 (b), Fig. 3 be refer to Fig. 7, as illustrated, the invention provides a kind of film bulk acoustic resonator
Device 1, the FBAR 1 includes：
Substrate 200, the substrate 200 has cavity body structure；
Lower electrode layer 210a, lower electrode layer 210a are formed on the substrate 200 and are covered at least partly described chamber
Body structure；
The cavity body structure collectively constitutes cavity 201a with the lower electrode layer 210a；
Piezoelectric layer 220a, the piezoelectric layer 220a formation are on the lower electrode layer 210a；
Upper electrode layer 230a, the upper electrode layer 230a formation are on the piezoelectric layer 220a；
Heat-conducting medium layer, the upper surface of the heat-conducting medium layer covering substrate 200, and with the lower electrode layer 210a,
At least one in the piezoelectric layer 220a, the upper electrode layer 230a three forms contact.
Specifically, as illustrated, FBAR 1 includes substrate 200, lower electrode layer 210a, piezoelectric layer 220a
And upper electrode layer 230a.Substrate 200 has upper surface and the lower surface relative with the upper surface, wherein, in substrate 200
Upper surface has cavity body structure.In the present embodiment, the material of substrate 200 includes High Resistivity Si, glass etc..Lower electrode layer 210a shapes
Into on the upper surface in substrate 200, lower electrode layer 210a covering part or all cavity body structure, the lower electrode layer
210a collectively constitutes cavity 201a with the cavity body structure, and cavity 201a is used for reflection sound wave energy.In the present embodiment, under
Electrode layer 210a material includes molybdenum, tungsten, aluminium etc..Piezoelectric layer 220a formation is on lower electrode layer 210.In the present embodiment,
Piezoelectric layer 220a material includes aluminium nitride, zinc oxide etc..Upper electrode layer 230a formation is on piezoelectric layer 220a.In this implementation
In example, upper electrode layer 230a material includes molybdenum, tungsten, aluminium etc..Preferably, upper electrode layer 230a does not cross lower electrode layer 210a
And cavity 201a, that is to say, that effective work area of FBAR 1 is determined by the area of upper electrode layer.Need
It is noted that substrate 200, lower electrode layer 210a, piezoelectric layer 220a and upper electrode layer 230a thickness range are this areas
Known to personnel, no longer illustrate herein.
FBAR 1 further comprises heat-conducting medium layer, the heat-conducting medium layer covering substrate 200
Upper surface, and contacted with least one formation in lower electrode layer 210a, piezoelectric layer 220a, upper electrode layer 230a three.Wherein,
The upper surface of substrate 200 around one side heat-conducting medium layer covering lower electrode layer 210a with the formation of substrate 200 so as to contact, separately
One side heat-conducting medium layer and at least one layer of upper surface in lower electrode layer 210a, piezoelectric layer 220a, upper electrode layer 230a, under
Surface or the contact of side wall with least one formation in above-mentioned three layers so as to contact.In the present embodiment, the material of heat-conducting medium layer
Material is using the good insulating materials of heat conductivility.Preferably, the insulating materials includes aluminum oxide, silica, boron nitride, carborundum
In one kind or its any combination.It should be noted that heat-conducting medium layer can be single layer structure or sandwich construction,
Its thickness can need to be adjusted according to actual design, not do any restriction to it at this.Due to the presence of heat-conducting medium layer,
When applying high-power signal to FBAR 1, heat produced by FBAR 1 is from upper electrode layer
The contact surface of 230a, piezoelectric layer 220a and lower electrode layer 210a and heat-conducting medium layer is conducted into heat-conducting medium layer, and is passed through
Heat-conducting medium layer is diffused in substrate 200, so as to effectively lift the heat dispersion of FBAR 1, Jin Erti
The power bearing ability of high FBAR 1.
Below, heat-conducting medium layer is described in detail with several exemplary embodiments.
In a specific embodiment, Fig. 2 (a) and Fig. 2 (b) are refer to, wherein, Fig. 2 (a) is according to one tool of the present invention
The cross-sectional view of the FBAR of body embodiment, Fig. 2 (b) is FBAR shown in Fig. 2 (a)
Overlooking the structure diagram.As illustrated, heat-conducting medium layer 300 covers the upper surface of the substrate 200 around lower electrode layer 210a,
Extend and be embedded between substrate 200 and lower electrode layer 210a, be i.e. heat-conducting medium layer 300 and lower electrode layer 210a and substrate
200 contacts.When applying high-power signal to FBAR 1, the heat that FBAR 1 is produced is under
The lower surface of electrode layer 210 is diffused in substrate 200 through heat-conducting medium layer 300.
In another specific embodiment, Fig. 3 is refer to, Fig. 3 is the film according to another specific embodiment of the invention
The cross-sectional view of bulk acoustic wave resonator.As illustrated, heat-conducting medium layer 310 covers lower electrode layer 210a side wall, prolong
Stretch and be embedded between piezoelectric layer 220a and lower electrode layer 210a, i.e., heat-conducting medium layer 310 not only with substrate 200 and bottom electrode
Layer 210a contacts, are also contacted with piezoelectric layer 220a.When applying high-power signal to FBAR 1, thin-film body sound
On the one hand the heat that wave resonator 1 is produced passes through from piezoelectric layer 220a lower surface, lower electrode layer 210a upper surface and side wall
Heat-conducting medium layer 310 is diffused in substrate 200.
In another specific embodiment, Fig. 4 is refer to, Fig. 4 is the film according to another specific embodiment of the invention
The cross-sectional view of bulk acoustic wave resonator.As illustrated, heat-conducting medium layer 320 is looped around lower electrode layer 210a and piezoelectricity
On layer 220a side wall, i.e., heat-conducting medium layer 320 is contacted with substrate 200, lower electrode layer 210a and piezoelectric layer 220a.When to thin
When film body acoustic resonator 1 applies power signal, the heat that FBAR 1 is produced is simultaneously from piezoelectric layer 220a side
Wall and lower electrode layer 210a side wall are diffused in substrate 200 through heat-conducting medium layer 320.
In another specific embodiment, Fig. 5 is refer to, Fig. 5 is the film according to another specific embodiment of the invention
The cross-sectional view of bulk acoustic wave resonator.As illustrated, the heat-conducting medium layer 330 is looped around the lower electrode layer, institute
On the side wall for stating piezoelectric layer and the upper electrode layer, i.e., heat-conducting medium layer 330 with substrate 200, lower electrode layer 210a, piezoelectric layer
220a and upper electrode layer 230b contacts.When applying power signal to FBAR 1, FBAR
1 heat from Top electrode 230b side wall, piezoelectric layer 220a upper surface and side wall, the lower electrode layer 210a produced side wall is saturating
Heat-conducting medium layer 330 is crossed to diffuse in substrate 200.
The area of its piezoelectric layer of FBAR and lower electrode layer shown in Fig. 2 (a), Fig. 3, Fig. 4 and Fig. 5 is
Identical, is also included in the range of of the invention protect for the FBAR that lower electrode layer crosses piezoelectric layer.
Fig. 6 and Fig. 7 are refer to, wherein, Fig. 6 and its lower electrode layer of FBAR 1 210a shown in Fig. 7 cross piezoelectric layer
220a, can effectively increase the contact surface between lower electrode layer 210a and substrate 200 and/or heat-conducting medium layer 340,350, from
And effectively lift the heat dispersion of FBAR 1.
It should be noted that above-described embodiment is only for example, heat conduction can be set according to design requirement in actual applications
The position of dielectric layer, for example, the upper surface of the substrate around heat-conducting medium layer covering lower electrode layer, covering lower electrode layer, piezoelectricity
The side wall of layer and upper electrode layer, at the same extend and be embedded between substrate and lower electrode layer and lower electrode layer and piezoelectric layer it
Between.It is every including heat-conducting medium layer and the heat-conducting medium layer with substrate surface formed contact and with lower electrode layer, piezoelectric layer,
At least one in upper electrode layer forms contact to reach that the FBAR for making heat diffusion to substrate is included in
In the range of the present invention is protected, for brevity, no longer FBAR structure that may be present is entered herein
Row is enumerated.
Compared with prior art, the present invention has advantages below：By forming heat-conducting medium layer, heat-conducting medium layer is made to cover
The upper surface of lid FBAR substrate and with the lower electrode layer, piezoelectric layer, upper electrode layer of FBAR
At least one in three forms contact so that on the premise of FBAR device area is not increased, effectively
The heat dispersion of FBAR is lifted, so as to improve the power bearing ability of FBAR, Jin Erkuo
The application field of big FBAR, such as microminiature communication base station, Satellite Communication System, military handheld terminal
Deng.
Above disclosed is only several preferred embodiments of the present invention, can not limit the present invention with this certainly
Interest field, therefore equivalent variations made according to the claims in the present invention still belong to the scope that the present invention is covered.
Claims (8)
1. a kind of FBAR, the FBAR includes：
Substrate, the substrate has cavity body structure；
Lower electrode layer, the lower electrode layer forms on the substrate and covers at least partly described cavity body structure；
The cavity body structure collectively constitutes cavity with the lower electrode layer；
Piezoelectric layer, piezoelectric layer formation is on the lower electrode layer；
Upper electrode layer, upper electrode layer formation is on the piezoelectric layer；
Heat-conducting medium layer, the upper surface of the heat-conducting medium layer covering substrate, and with the lower electrode layer, the piezoelectric layer,
At least one in the upper electrode layer three forms contact.
2. FBAR according to claim 1, wherein：
The upper surface of the substrate around the heat-conducting medium layer covering lower electrode layer, the heat-conducting medium layer with it is described
At least one in lower electrode layer, the piezoelectric layer, the upper electrode layer three forms contact.
3. FBAR according to claim 2, wherein, the heat-conducting medium layer extends and is embedded in described
Between substrate and the lower electrode layer.
4. FBAR according to claim 2, wherein, the heat-conducting medium layer covering lower electrode layer
Side wall, extend and be embedded between the piezoelectric layer and the lower electrode layer.
5. FBAR according to claim 2, wherein, the heat-conducting medium layer is looped around the bottom electrode
On the side wall of layer and the piezoelectric layer.
6. FBAR according to claim 2, wherein, the heat-conducting medium layer is looped around the bottom electrode
On the side wall of layer, the piezoelectric layer and the upper electrode layer.
7. FBAR according to any one of claim 1 to 6, wherein, the material of the heat-conducting medium layer
Material is insulating materials.
8. FBAR according to claim 7, wherein, the material of the heat-conducting medium layer includes oxidation
One kind or its any combination in aluminium, silica, boron nitride, carborundum.
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| CN104753493B true CN104753493B (en) | 2017-08-25 |
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Families Citing this family (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106209001B (en) * | 2016-06-29 | 2019-02-15 | 电子科技大学 | The thin film bulk acoustic wave resonator and preparation method thereof of based single crystal lithium niobate thin slice |
| CN106209002B (en) * | 2016-06-29 | 2019-03-05 | 电子科技大学 | A kind of thin film bulk acoustic wave resonator and preparation method thereof |
| CN108649920B (en) * | 2017-12-29 | 2021-12-03 | 苏州汉天下电子有限公司 | Piezoelectric acoustic resonator, piezoelectric acoustic wave filter, duplexer, and radio frequency communication module |
| CN111193490A (en) * | 2018-11-14 | 2020-05-22 | 天津大学 | Heat dissipation structure, bulk acoustic wave resonator with heat dissipation structure, filter and electronic equipment |
| CN111193486A (en) * | 2018-11-14 | 2020-05-22 | 天津大学 | Heat dissipation structure, bulk acoustic wave resonator with heat dissipation structure, filter and electronic equipment |
| US11437977B2 (en) * | 2018-12-14 | 2022-09-06 | Samsung Electro-Mechanics Co., Ltd. | Bulk-acoustic resonator and elastic wave filter device |
| CN111010129A (en) * | 2019-07-15 | 2020-04-14 | 天津大学 | Bulk acoustic wave resonator device, filter, and electronic apparatus |
| CN111010114B (en) * | 2019-08-09 | 2023-10-27 | 天津大学 | Bulk acoustic wave resonator with heat absorption and radiation structure, filter and electronic equipment |
| CN111654259A (en) * | 2020-05-13 | 2020-09-11 | 深圳市信维通信股份有限公司 | Bulk acoustic wave resonance device, filtering device and radio frequency front end device |
| CN112039487B (en) * | 2020-08-06 | 2021-08-10 | 诺思(天津)微系统有限责任公司 | Bulk acoustic wave resonator with heat conduction structure, manufacturing method thereof, filter and electronic equipment |
| CN115276590A (en) * | 2021-04-30 | 2022-11-01 | 华为技术有限公司 | Resonator and electronic component |
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| CN102301590A (en) * | 2009-02-20 | 2011-12-28 | 宇部兴产株式会社 | Thin-film piezoelectric resonator and thin-film piezoelectric filter using same |
| CN103378817A (en) * | 2012-04-13 | 2013-10-30 | 太阳诱电株式会社 | Filter device, manufacturing method for filter device, and duplexer |
| CN203278765U (en) * | 2013-05-28 | 2013-11-06 | 江苏艾伦摩尔微电子科技有限公司 | Single-chip-integrated temperature-compensating film bulk acoustic resonator (FBAR) |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7791434B2 (en) * | 2004-12-22 | 2010-09-07 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric |
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|---|---|---|---|---|
| CN102301590A (en) * | 2009-02-20 | 2011-12-28 | 宇部兴产株式会社 | Thin-film piezoelectric resonator and thin-film piezoelectric filter using same |
| CN103378817A (en) * | 2012-04-13 | 2013-10-30 | 太阳诱电株式会社 | Filter device, manufacturing method for filter device, and duplexer |
| CN203278765U (en) * | 2013-05-28 | 2013-11-06 | 江苏艾伦摩尔微电子科技有限公司 | Single-chip-integrated temperature-compensating film bulk acoustic resonator (FBAR) |
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