CN111010129A

CN111010129A - Bulk acoustic wave resonator device, filter, and electronic apparatus

Info

Publication number: CN111010129A
Application number: CN201910634088.5A
Authority: CN
Inventors: 张孟伦; 庞慰; 杨清瑞
Original assignee: Tianjin University; ROFS Microsystem Tianjin Co Ltd
Current assignee: Tianjin University; ROFS Microsystem Tianjin Co Ltd
Priority date: 2019-07-15
Filing date: 2019-07-15
Publication date: 2020-04-14

Abstract

The invention relates to a bulk acoustic wave resonator device, comprising a first substrate; an acoustic mirror; a bottom electrode; a top electrode; a piezoelectric layer; and a first heat absorbing structure, wherein: the overlapped area of the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode in the thickness direction of the substrate is an effective area of the resonator; and the first heat absorption structure is disposed in the acoustic mirror and spaced apart from the bottom electrode in a thickness direction of the resonator. The invention also relates to a filter and an electronic device.

Description

Bulk acoustic wave resonator device, filter, and electronic apparatus

Technical Field

Embodiments of the present invention relate to the field of semiconductors, and more particularly, to a bulk acoustic wave resonator device, a filter, and an electronic apparatus having one of the above components.

Background

A film bulk acoustic resonator made by using longitudinal resonance of a piezoelectric film in a thickness direction has become a viable alternative to surface acoustic wave devices and quartz crystal resonators in the fields of mechanical communication and high-speed serial data applications. The RF front-end bulk acoustic wave filter/duplexer provides superior filtering characteristics, such as low insertion loss, steep transition band, large power capability, and strong anti-electrostatic discharge (ESD) capability. The high-frequency film bulk acoustic wave oscillator with ultralow frequency temperature drift has the advantages of low phase noise, low power consumption and wide bandwidth modulation range. In addition, these micro thin-film resonators use CMOS compatible processes on silicon substrates, which can reduce unit cost and facilitate eventual integration with CMOS circuitry.

A bulk acoustic wave resonator comprises an acoustic mirror and two electrodes, and a layer of piezoelectric material, called piezoelectric actuation, located between the electrodes. Also called bottom and top electrodes are excitation electrodes, whose function is to cause mechanical oscillations of the layers of the resonator. The acoustic mirror forms acoustic isolation between the bulk acoustic wave resonator and the substrate to prevent the acoustic waves from propagating out of the resonator, causing energy loss.

Theoretically, the bulk acoustic wave resonator has only the mutual conversion of mechanical energy and electrical energy in an operating state, but in a practical situation, the electrical energy and the acoustic wave in the bulk acoustic wave resonator are always inevitably partially converted into thermal energy, and the heating effect becomes more remarkable as the power of the resonator is higher. Since the thicknesses of the key components of the bulk acoustic wave resonator, namely the piezoelectric film and the electrodes, are only in the micrometer or nanometer level, the accumulation of heat therein can bring about significant negative effects, such as causing the temperature rise of the resonator to cause the frequency of the resonator to drift, or causing accelerated aging of the piezoelectric structure or directly causing damage thereof, thereby affecting the reliability and the service life of the resonator, and simultaneously limiting the further improvement of the power capacity of the resonator.

As the power of the bulk acoustic wave resonator is increased, the heating problem becomes a key factor for restricting the performance of the resonator to be further improved. Conventional heat dissipation means typically build structures that come into direct contact with the acoustic region of the resonator, which often adversely affects resonator performance.

Disclosure of Invention

The invention provides a non-contact heat conduction structure to improve the heat dissipation performance of a resonator, thereby improving the power capacity of a device and greatly reducing the adverse effect of a heat absorption structure on the electromechanical performance of the device.

The present invention is directed to alleviating or solving at least one aspect of the heat dissipation problem of the prior art resonators.

According to an aspect of an embodiment of the present invention, there is provided a bulk acoustic wave resonator device including:

a first substrate;

an acoustic mirror;

a bottom electrode;

a top electrode;

a piezoelectric layer; and

a first heat-absorbing structure for absorbing heat from the air,

wherein:

the overlapped area of the acoustic mirror, the bottom electrode, the piezoelectric layer and the top electrode in the thickness direction of the substrate is an effective area of the resonator; and is

The first heat absorbing structure is provided in the acoustic mirror and spaced apart from the bottom electrode in a thickness direction of the resonator.

Optionally, the acoustic mirror includes a cavity structure, and the first heat absorbing structure is a first heat absorbing structure layer disposed at a bottom of the cavity structure.

Optionally, the shape of the first heat absorbing structure layer is consistent with the shape of the effective area.

Optionally, a first distance is provided between the first heat absorption structure layer and the bottom electrode in a thickness direction of the resonator, and the first heat absorption structure layer has a first thickness. Further, the first thickness is greater than the first distance.

Optionally, the first thickness is in a range of 0.2-8 μm; the first distance is in the range of 0.1-4 μm.

Optionally, the resonator device further comprises a second substrate opposite the first substrate, wherein: the first substrate or the second substrate is provided with a support part to form an accommodating space between the first substrate and the second substrate.

Optionally, a second heat absorbing structure is disposed on an inner side surface of the second substrate opposite to the top electrode, and the second heat absorbing structure is spaced from the resonator in a thickness direction of the resonator.

Optionally, the second heat absorption structure is a second heat absorption structure layer and has a second thickness, the second heat absorption structure layer and the resonator have a second distance in the thickness direction, and the second thickness is in a range of 0.4-20 μm; the second distance range is: 0.2-10 μm.

Optionally, the resonator device is provided with a bonding layer for forming a seal at the abutment of the support portion, the bonding layer having thermal conductivity and being connected to the second heat absorbing structure.

Optionally, the support portion is disposed on the second substrate; the first substrate and/or the second substrate are/is provided with a through hole penetrating through the first substrate and/or the second substrate, a heat conduction strip connected with the bonding layer is arranged in the through hole, and the heat conduction strip extends from the bonding layer to the surface of the corresponding substrate.

Optionally, an outer side surface of the second substrate parallel to the inner side surface is provided with an outer heat dissipation portion, and the outer heat dissipation portion is connected to the heat conduction strip extending to the outer side surface of the second substrate.

Optionally, the first and/or heat absorbing structure is a heat absorbing structure layer, and a heat exchange area increasing structure is disposed on a side facing the resonator.

Optionally, the heat exchange area increasing structure includes a plurality of protrusions protruding toward the resonator.

Optionally, at least a portion of the protrusions have a reflective slope.

Optionally, the protrusion includes one or more of a bar-shaped protrusion, a column-shaped protrusion, a cone-shaped protrusion, a column-shaped cone-shaped composite protrusion, and a bar-shaped cone-shaped composite protrusion.

Optionally, the columnar tapered composite protrusion includes a tapered portion close to the resonator and a columnar portion connected to the tapered portion; and in two cylindrical conical composite protrusions arranged adjacently, the inclination angle of the reflection slope of the conical part of one composite protrusion is designed so that: the heat flow parallel to the protruding direction of the composite protrusion is reflected by the reflecting slope and reaches the surface of the columnar portion of another composite protrusion.

Optionally, the heat exchange area increasing structure includes a plurality of concave portions recessed inwards from the one side of the heat absorbing structure layer.

Alternatively, the entrance of the recess has a tapered shape with a large top and a small bottom.

Optionally, the recessed portion is a tapered cylindrical composite recess. Further, the inclination angle of the reflection slope of the tapered portion of the composite depression is designed such that: the heat flow parallel to the concave direction of the composite concave is reflected by the reflecting inclined plane and reaches the surface of the columnar part of the composite concave.

Optionally, the heat absorbing structure is made of the following materials or a composite of the following materials: silicon dioxide, aluminum nitride, aluminum oxide, silicon nitride, beryllium oxide, polycrystalline diamond (PCD), monocrystalline silicon, polycrystalline silicon, germanium, silicon-containing polymers, epoxy, gold.

According to a further aspect of embodiments of the present invention, there is provided a filter comprising a plurality of bulk acoustic wave resonator devices including at least one resonator device as described above, wherein: the plurality of bulk acoustic wave resonator devices includes a series resonator arm each having a plurality of series resonators and a plurality of parallel resonator arms each having a parallel resonator.

Optionally, for each bulk acoustic wave resonator device, the filter is provided with the corresponding first and/or second heat absorbing structure.

Optionally, for each series resonator, the filter is provided with a corresponding first and/or second heat absorbing structure.

According to a further aspect of an embodiment of the present invention, there is provided an electronic apparatus including the resonator device described above, or the filter described above.

Drawings

These and other features and advantages of the various embodiments of the disclosed invention will be better understood from the following description taken in conjunction with the accompanying drawings, in which like reference characters designate like parts throughout, and in which:

fig. 1A is a schematic cross-sectional view of a resonator having a heat absorbing structure and a package structure thereof according to an exemplary embodiment of the present invention;

FIG. 1B is a partial schematic view of the heat flow of FIG. 1A;

FIG. 1C is a schematic cross-sectional view of the resonator of FIG. 1A;

fig. 2A is a schematic view of the shape of a heat absorbing structure or layer according to an exemplary embodiment of the present invention;

FIG. 2B is an abstract circuit diagram of a ladder topology filter;

FIG. 2C is a specific layout of resonators in the ladder topology filter of FIG. 2B;

fig. 2D is a layout diagram exemplarily illustrating a heat absorbing layer;

fig. 2E is a layout diagram exemplarily showing a heat absorbing layer;

FIG. 3 is a schematic view of a surface structure of a heat absorbing layer according to an exemplary embodiment of the present invention;

FIG. 4 is a schematic view of a surface structure of a heat absorbing layer according to an exemplary embodiment of the present invention;

FIG. 5A is a schematic view of a surface structure of a heat absorbing layer according to an exemplary embodiment of the present invention;

FIG. 5B is a schematic view of a surface structure of a heat absorbing layer according to an exemplary embodiment of the present invention;

FIG. 6A is a schematic view of a surface structure of a heat absorbing layer according to an exemplary embodiment of the present invention;

FIG. 6B is a schematic diagram showing a cross-sectional view of the stud bump and the beam bump and receiving heat radiation;

FIG. 6C is a schematic diagram showing a cross-sectional view of the stud bump and the beam bump and reflected heat radiation;

FIG. 6D is a schematic view of the tapered protrusions and the sloped sidewalls receiving thermal radiation;

FIG. 7A is a schematic view of a surface structure of a heat absorbing layer according to an exemplary embodiment of the present invention;

FIG. 7B is a schematic view of a single pyramidal protrusion profile and its reflection of thermal radiation;

FIG. 7C is a schematic view of a composite protrusion cross-section and its reflection of thermal radiation;

fig. 8 is a schematic view of a surface structure of a heat absorbing layer according to an exemplary embodiment of the present invention.

Detailed Description

The technical scheme of the invention is further specifically described by the following embodiments and the accompanying drawings. In the specification, the same or similar reference numerals denote the same or similar components. The following description of the embodiments of the present invention with reference to the accompanying drawings is intended to explain the general inventive concept of the present invention and should not be construed as limiting the invention.

The general scheme of the bulk acoustic wave resonator and its packaging structure with respect to the heat absorbing structure according to the present invention is explained below with reference to fig. 1A to 1C. Fig. 1A is a schematic cross-sectional view of a resonator having a heat absorbing structure and a package structure thereof according to an exemplary embodiment of the present invention; FIG. 1B is a partial schematic view of the heat flow of FIG. 1A; fig. 1C is a schematic cross-sectional view of the resonator in fig. 1A.

In fig. 1A:

10: a first substrate for carrying and enclosing the acoustic device, the material being typically selected from monocrystalline silicon, quartz, gallium arsenide or sapphire, among others.

15: the second substrate, generally having an annular protrusion 16 for carrying and enclosing the acoustic device, is selected from the same materials as 10.

20: the acoustic mirror structure, which may typically be a cavity, a bragg reflector or other equivalent acoustic wave reflecting structure. The acoustic mirror in fig. 1A is an air cavity embedded in a substrate 10.

30: sandwich structure of bulk acoustic wave resonator: specifically, the piezoelectric element includes a bottom electrode 31, a piezoelectric thin film layer 32, and a top electrode 33. The electrode material can be molybdenum, the piezoelectric layer film material can be aluminum nitride, zinc oxide, lead zirconate titanate (PZT) and the like, and optionally, the piezoelectric material can be doped with rare earth elements in a certain atomic ratio. The process auxiliary layers of the resonator, such as the passivation layer and the like, and the pin structure of the electrode and the like are omitted here.

40: the heat absorption layer disposed at the bottom of the acoustic mirror (cavity) 20 may be made of inorganic materials such as silicon dioxide, aluminum nitride, aluminum oxide, silicon nitride, beryllium oxide, polycrystalline diamond (PCD), monocrystalline silicon, polycrystalline silicon, germanium, organic materials such as silicon-containing polymer and epoxy resin, or metal materials such as gold, or a combination thereof.

45: the heat absorbing layer, which is located on top of the inner side of the second substrate 15, is selected from the same material 40.

50: bonding layer on the inner surface of the substrate 10: the material can be selected from gold, tin, indium, etc.

55: and a bonding layer formed on the surface of the substrate 15 and the support portion 16 and made of the same material as the bonding layer 50, wherein the bonding layer 55 may extend along the inner side surface of the second substrate 15 like a middle so as to contact the heat absorbing layer 45.

And 60, a through hole structure positioned inside the substrate 10 for the metal of the bonding layer 50 to extend to the inside of the substrate 10.

65: the vias located within the substrate 15 (and its protrusions 16) allow the metal of the bonding layer 55 to extend into the substrate 15 (and its protrusions 16) and establish a connection with the structure on the upper surface of the substrate 15.

70: and a bonding pad on the upper surface of the substrate 15, wherein the material can be copper.

Solder balls on the pads for connecting the packaged resonator to other substrates or circuit boards, typically tin.

When the resonator is in operation, the heat flow generated by the resonator moves as shown in fig. 1B.

When the bulk acoustic wave resonator is in operation, heat is mainly dissipated from the surfaces of the bottom electrode 31 and the top electrode 33 to the surroundings in the form of heat conduction and radiation, and the heat radiation emitted by the resonator and the heat in the air in the cavity are absorbed by the heat absorbing layers 40 and 45 (as shown by arrows F1-2 in fig. 1B). After the heat enters the heat absorbing layer, it is further dissipated outwards through the interface where the heat absorbing layer contacts the peripheral structure and enters the

substrates

10, 15, the metal bonding layer 55, and so on.

The resonator surfaces, such as the lower surface of the electrode 31 and the upper surface of the electrode 33, should be kept at a proper distance from the heat absorbing layer surfaces, such as the upper surface of the heat absorbing layer 40 and the lower surface of the heat absorbing layer 45, on one hand, too close distance may cause the resonator surfaces to adhere to the heat absorbing layer surfaces, thereby seriously affecting the resonator performance; on the other hand, too large a distance results in a decrease in heat absorption efficiency and a failure to achieve an ideal heat dissipation effect. The invention therefore defines the thickness of the heat absorbing layer and its distance from the resonator surface as follows:

(1) the thickness D2 for the heat absorbing layer located in the cavity is in the range of 0.2-8 μm, the distance D3 between the upper surface and the lower surface of the resonator is in the range of 0.1-4 μm, and further D2 is greater than D3.

(2) The thickness of the heat absorbing layer H2 for the top of the inner side of the second substrate is in the range of 0.4-20 μm, the distance H3 between the lower surface and the upper surface of the resonator is in the range of 0.2-10 μm, and further H2 is greater than H3.

Fig. 2A is a schematic view of the shape of a heat absorbing structure or a heat absorbing layer according to an exemplary embodiment of the present invention. The shapes of the active areas of several common bulk acoustic wave resonators are shown in fig. 2A, and the top view shape of the heat absorbing layer in the present invention includes, but is not limited to, the example depicted in fig. 2A.

In the invention, the heat absorption structure is arranged in the cavity of the acoustic mirror, and the space of the cavity can be fully utilized, so that the structure of the resonator is more compact.

In addition, in a further embodiment, the machining precision of the acoustic mirror cavity and the heat absorbing structure located therein (more specifically, the heat absorbing structure layer) is higher than that of the heat absorbing structure formed based on bonding and located on the second substrate.

The layout of the heat absorbing layer in the case of a multi-resonator is described below with reference to fig. 2B-2E. FIG. 2B is an abstract circuit diagram of a ladder topology filter; fig. 2C shows a specific layout of resonators in the ladder topology filter of fig. 2B.

Fig. 2B depicts a filter abstraction circuit structure with a Ladder (Ladder) topology. The filter includes a series resonance mode bulk acoustic resonator Rs1-3 and a parallel resonance mode bulk acoustic resonator Rp1-2, and has an Input terminal Input, an Output terminal Output, and a ground terminal GND. Fig. 2C depicts a concrete resonator layout corresponding to the abstract circuit of fig. 2B.

For the specific resonator layout of fig. 2C, it is optional to place a heat absorbing structure at the corresponding location of each resonator in the manner shown in fig. 2D. In addition, only the resonator with outstanding heat generation power can be selected according to the specific heat generation distribution of the resonator, and the corresponding heat absorption layer can be placed. For example, since the operating current of the resonator Rp1-2 in the parallel resonance mode is lower than that of the resonator Rs1-3 in the series resonance mode, and further the thermal power of Rp1-2 is lower than that of Rs1-3, it is considered to provide a heat absorbing layer only at a position corresponding to Rs1-3, thereby forming the layout shown in FIG. 2E.

The placement of the heat absorbing structure is not limited to the illustrated layout, and the distribution of the heat absorbing structure may be specifically arranged according to the actual heat generation amount and the specific temperature threshold of the resonator, for example, the heat absorbing structure may be placed at a corresponding position of the resonator with the highest temperature.

Details of the surface structure of the heat absorbing layer are described below with reference to fig. 3, 4, 5A-5B, 6A-6D, 7A-7C, and 8D.

Fig. 3 is a schematic view of a surface structure of a heat absorbing layer according to an exemplary embodiment of the present invention, and a flat type is illustrated in fig. 3. As shown in fig. 3, the heat absorption layer has no microstructure on the macroscopic upper surface, and the process is simple. However, since the heat absorbing layer is very close to the surface of the resonator and the two planes are substantially parallel as a whole, a part of the heat energy flow radiated from the surface of the resonator to the surface of the absorbing layer is reflected back to the resonator, thereby reducing the heat dissipation efficiency, and therefore, the surface of the heat absorbing layer is required to have a certain roughness. The thickness H10 of the flat heat absorbing layer was consistent with the ranges of D2 and H2 described previously.

Fig. 4 is a schematic view of the surface structure of a heat absorbing layer according to an exemplary embodiment of the present invention, in which beam-like protrusions are shown. As shown in fig. 4, the heat absorbing layer has a base portion BA20 and a protrusion BM20, the protrusion is a rectangular beam, and the base portion has a thickness h20 in the range of 0.1-3 μm; the protrusion height h21 is in the range of 0.1-3 μm; width L21 is in the range of 2-20 μm; the interval L22 between adjacent protrusions is in the range of 2-20 μm. This structure increases the contact area with air (2 sidewalls per beam-like protrusion) compared to the flat structure, and thus can effectively increase the heat transfer efficiency based on air to the heat absorbing layer.

In fig. 4, when the width of two adjacent protrusions is less than 5 μm, the protruding portion BM20 is made of a metal material such as gold. When the width of two adjacent protrusions is greater than 5 μm, the non-metallic material is selected as the protrusion BM20, and the description is also applicable to the subsequent embodiments.

FIG. 5A is a schematic view of a surface structure of a heat absorbing layer according to an exemplary embodiment of the present invention; fig. 5B is a schematic view of the surface structure of the heat absorbing layer according to an exemplary embodiment of the present invention, both showing columnar protrusions.

As shown in FIG. 5A, the heat absorbing layer has a base portion BA30 and a convex portion BM30, the convex portion is a rectangular pillar, and the base portion has a thickness h30 in the range of 0.1-3 μm; the protrusion height h31 is in the range of 0.1-3 μm; in one direction, the width L31 ranges from 2-20 μm; the interval L32 between adjacent protrusions ranges from 2 to 20 μm and the width w31 in the other direction ranges from 1 to 15 μm; the protrusion spacing w32 ranges from 1 to 15 μm. This structure further increases the contact area with air (4 sidewalls per columnar protrusion), and thus can effectively increase the heat conduction efficiency based on air to the heat absorbing layer.

In addition, the shape of the cross section of the pillar in the plan view is not limited to the rectangular shape shown in fig. 5A, and other options are also available. For example, the oval cross-section posts shown in fig. 5B may be selected and arranged as shown. Wherein the major axis a of the ellipse ranges from 2 to 15 μm and the minor axis b ranges from 1 to 10 μm, while the center of the ellipse is located at the vertex of a square with a side length d and the major/minor axis of each ellipse is ensured to be perpendicular to the minor/major axes of its neighboring ellipses in the transverse or longitudinal direction. Wherein d ranges from 5 to 50 μm.

As can be appreciated by those skilled in the art, the cross-section and arrangement for the post-type protrusions is not limited to the above examples. Further options are possible, such as triangular posts, polygonal posts (greater than 4 sides), other closed curve cross-section posts, and so forth.

Fig. 6A is a schematic view of a surface structure of a heat absorbing layer according to an exemplary embodiment of the present invention, in which tapered protrusions are shown.

As shown in FIG. 6A, the heat absorbing layer has a base portion BA40 and a convex portion BM40, the convex portion is a pillar having a rectangular cross section, a base portion thickness h40 in the range of 0.1 to 3 μm, a convex portion height h41 in the range of 0.1 to 3 μm, a bottom width L41 in one direction in the range of 2 to 20 μm, a bottom interval L42 between adjacent convex portions in the range of 2 to 20 μm, a bottom width w41 in the other direction in the range of 1 to 15 μm, a bottom interval w42 between adjacent convex portions in the range of 1 to 15 μm, and further an inclined side wall of the convex portion in one direction makes an angle α 40 of 10 to 40 degrees with the vertical direction, and an inclined side wall in the other direction makes an angle β 40 of 10 to 40 degrees with the vertical direction.

The structure of fig. 6A not only further increases the contact area with air (4 sidewalls per columnar protrusion) and effectively increases the heat transfer efficiency from air to the heat absorbing layer, but also reflects radiant heat flow by using the inclined sidewalls and increases the heat absorbing efficiency of the sidewalls. The concrete description is as follows:

fig. 6B is a schematic cross-sectional view of the stud bump and the beam bump and the case of receiving heat radiation. FIG. 6C is a schematic diagram showing a cross-sectional view of the stud bump and the beam bump and the reflected heat radiation.

When the vertical post or beam type protrusion of fig. 6B is used, it has only a horizontal plane and a vertical plane, and since the surface of the heat sink is very close to the surface of the resonator, the heat energy flow in the form of radiation is substantially transferred to the surface of the heat sink in a direction perpendicular to the horizontal plane H0 of the structure of fig. 6B, while the vertical side wall C0 of the protrusion of the structure receives substantially no radiation, and thus the structure does not fully utilize the surface area of the heat sink in the sense of absorbing the heat energy in the form of radiation. Furthermore, as shown in fig. 6C, a certain reflection Ro is still formed when the incident heat flow Ri reaches the horizontal surface of the structure.

FIG. 6D is a schematic view of the tapered protrusions and the sloped sidewalls receiving thermal radiation. When a tapered protrusion with a sloped sidewall C1 is used, the sidewall of the protrusion can be utilized to absorb heat radiation, as shown in fig. 6D, and due to the sidewall slope, the overall horizontal area of the structure is reduced, thereby reducing the heat flow reflection at the horizontal plane.

In alternative embodiments, the protrusions may also be composite structures, such as a combination of tapered and cylindrical shapes. Fig. 7A is a schematic view of a surface structure of a heat absorbing layer according to an exemplary embodiment of the present invention.

As shown in FIG. 7A, the heat absorbing layer has a base portion BA50 and a raised portion BM50, the raised portion is further divided into a lower rectangular pillar BM51 and a tapered pillar BM52 located at an upper portion of the rectangular pillar, the base portion thickness h50 ranges from 0.1 μm to 1 μm, the rectangular pillar portion height h51 ranges from 0.1 μm to 2 μm and the tapered pillar height h52 ranges from 0.1 μm to 3 μm, the bottom width L51 ranges from 2 μm to 20 μm in one direction, the bottom spacing L52 of adjacent protrusions ranges from 2 μm to 20 μm and the bottom width w51 in the other direction ranges from 1 μm to 15 μm, the bottom spacing w52 of adjacent raised portions ranges from 1 μm to 15 μm, and further the inclined side walls of the tapered protrusions in one direction range from 10 degrees to 40 degrees from the vertical direction α 50 degrees, and the inclined side walls in the other direction range from 10 degrees to 40 degrees from the vertical direction β 50 degrees.

FIG. 7B is a schematic view of a single pyramidal protrusion profile and its reflection of thermal radiation. When a single conical protrusion is used, there will still be a heat flow Ro reflected back to the resonator after a small number of reflections from the heat flow Ri radiated onto the inclined side C1, as shown in fig. 7B.

FIG. 7C is a schematic view of a composite protrusion cross-section and its reflection of thermal radiation. When a compound protrusion is used, as shown in fig. 7C, the heat flow Ri incident on the inclined side surface C1 will be reflected into the gap defined by the adjacent vertical side walls and continue to undergo multiple reflections. Since a portion of the heat energy is absorbed for each reflection, there is little heat flow that can escape from the slit. Therefore, the structure can further improve the heat absorption efficiency of the heat absorption layer compared with the single conical protrusion.

It is noted that the taper may be combined with a beam-like protrusion or a columnar protrusion.

In the above embodiments, the surface of the heat absorbing layer is provided with the protrusions. However, the present invention is not limited thereto, and the surface of the heat absorbing layer may be provided with depressions as shown in fig. 8.

Because the protrusions are sensitive to factors such as external impact in the processing process and have the problem of poor process stability, the protrusions can be converted into the base parts of the cavities embedded into the heat absorption layers, and therefore a more stable concave structure is formed.

As shown in FIG. 8, the heat absorbing layer has a base portion BA60 and a cavity portion BM60, the cavity portion is further divided into an upper inverted cone-shaped cavity BM61 and a rectangular pillar cavity BM62 located at a lower portion of the inverted cone-shaped cavity, a base portion thickness h60 ranges from 3 to 8 μm, an inverted cone-shaped cavity depth h61 ranges from 0.1 to 3 μm, a rectangular pillar cavity depth h62 ranges from 0.1 to 3 μm, a face opening width L61 ranges from 2 to 20 μm in one direction, an adjacent opening interval L62 ranges from 2 to 20 μm and a face opening width w561 ranges from 1 to 15 μm in the other direction, a face opening interval w62 ranges from 1 to 15 μm, an inclined side wall of the inverted cone-shaped cavity in one direction makes an angle α 60 degrees to a vertical direction in a range from 10 to 40 degrees, and an inclined side wall in the other direction makes an angle β 60 degrees to a vertical direction in a range from 10 to 40 degrees.

In fig. 8, the depressions are in the form of a composite structure of columnar pyramidal shapes. However, the recesses may also be columnar recesses, tapered recesses, stripe-shaped recesses, or the like.

In the present invention, whether a concave composite structure or a convex composite structure, the shape of the taper portion transitions to the shape of the post portion between two portions (e.g., the taper portion and the post portion) of the composite structure.

In the present invention, all values of the numerical range may be other than the two endpoints, or may be a median of the numerical range, etc.

In the present invention, the taper is not limited to a regular taper or a truncated cone, and may be any as long as a reflecting slope is present with respect to the columnar portion. In the present invention, the reflecting slope faces the inflow direction of the heat flow to reflect the heat flow.

Based on the above, the invention provides the following technical scheme:

1. a bulk acoustic wave resonator device, comprising:

a first substrate;

an acoustic mirror;

a bottom electrode;

a top electrode;

a piezoelectric layer; and

a first heat-absorbing structure for absorbing heat from the air,

wherein:

The first heat absorbing structure (corresponding to the heat absorbing layer provided in the cavity in the embodiment) is provided in the acoustic mirror, and is spaced apart from the bottom electrode in the thickness direction of the resonator.

For the heat absorbing layer or the heat absorbing structure, a protrusion or a depression may be used, and further, the protrusion or the depression is provided with a reflection slope reflecting the heat flow from the resonator.

2. A filter, comprising:

a plurality of bulk acoustic wave resonator devices comprising at least one of the resonator devices described above, wherein:

the plurality of bulk acoustic wave resonator devices includes a series resonator arm each having a plurality of series resonators and a plurality of parallel resonator arms each having a parallel resonator.

3. An electronic device comprising the resonator device described above, or the filter described above. It should be noted that the electronic device herein includes, but is not limited to, intermediate products such as a radio frequency front end and a filtering and amplifying module, and terminal products such as a mobile phone, WIFI, and an unmanned aerial vehicle.

Although embodiments of the present invention have been shown and described, it would be appreciated by those skilled in the art that changes may be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the claims and their equivalents.

Claims

1. A bulk acoustic wave resonator device, comprising:

a first substrate;

an acoustic mirror;

a bottom electrode;

a top electrode;

a piezoelectric layer; and

a first heat-absorbing structure for absorbing heat from the air,

wherein:

2. The resonator device of claim 1, wherein:

the acoustic mirror comprises a cavity structure, and the first heat absorption structure is a first heat absorption structure layer arranged at the bottom of the cavity structure.

3. The resonator device of claim 2, wherein:

the shape of the first heat absorption structure layer is consistent with that of the effective area.

4. The resonator device of claim 2 or 3, wherein:

the first heat absorption structure layer has a first distance from the bottom electrode in the thickness direction of the resonator, and the first heat absorption structure layer has a first thickness.

5. The resonator device of claim 4, wherein:

the first thickness is greater than the first distance.

6. The resonator device of any of claims 3-5, wherein:

the first thickness is in the range of 0.2-8 μm;

the first distance is in the range of 0.1-4 μm.

7. The resonator device of any of claims 1-6, further comprising:

a second substrate opposed to the first substrate,

wherein:

the first substrate or the second substrate is provided with a support part to form an accommodating space between the first substrate and the second substrate.

8. The resonator device of claim 7, wherein:

and a second heat absorption structure is arranged on the inner side surface of the second substrate opposite to the top electrode, and the second heat absorption structure is spaced from the resonator in the thickness direction of the resonator.

9. The resonator device of claim 8, wherein:

the second heat absorption structure is a second heat absorption structure layer and has a second thickness, and the second heat absorption structure layer and the resonator have a second distance in the thickness direction;

the second thickness is in the range of 0.4-20 μm; the second distance range is: 0.2-10 μm.

10. The resonator device of any of claims 7-9, wherein:

the resonator device is provided with a bonding layer for forming a seal at the abutment of the support portions, the bonding layer having thermal conductivity and being connected with the second heat absorbing structure.

11. The resonator device of claim 10, wherein:

the supporting part is arranged on the second substrate;

the first substrate and/or the second substrate are/is provided with a through hole penetrating through the first substrate and/or the second substrate, a heat conduction strip connected with the bonding layer is arranged in the through hole, and the heat conduction strip extends from the bonding layer to the surface of the corresponding substrate.

12. The resonator device of claim 11, wherein:

the outer side surface of the second substrate parallel to the inner side surface is provided with an outer heat dissipation portion connected to a heat conduction strip extending to the outer side surface of the second substrate.

13. The resonator device of any of claims 1-12, wherein:

the first heat absorption structure and/or the second heat absorption structure are/is a heat absorption structure layer, and a heat exchange area increasing structure is arranged on one side facing the resonator.

14. The resonator device of claim 13, wherein:

the heat exchange area increasing structure includes a plurality of protrusions protruding toward the resonator.

15. The resonator device of claim 14, wherein:

at least a portion of the protrusions have a reflective slope.

16. The resonator device of claim 14 or 15, wherein:

the protrusions comprise one or more of strip-shaped protrusions, columnar protrusions, conical protrusions, columnar conical composite protrusions and strip-shaped conical composite protrusions.

17. The resonator device of claim 16, wherein:

the columnar conical composite protrusion comprises a conical part close to the resonator and a columnar part connected with the conical part; and is

In two columnar tapered compound protrusions arranged adjacently, the inclination angle of the reflection slope of the tapered portion of one compound protrusion is designed such that: the heat flow parallel to the protruding direction of the composite protrusion is reflected by the reflecting slope and reaches the surface of the columnar portion of another composite protrusion.

18. The resonator device of claim 13, wherein:

the heat exchange area increasing structure comprises a plurality of concave parts which are inwards concave at one side of the heat absorbing structure layer.

19. The resonator device of claim 18 wherein:

the entrance of the recess has a tapered shape with a large top and a small bottom.

20. The resonator device of claim 19, wherein:

the depressed part is the compound recess of toper column, compound recess includes toper portion and the column portion of being connected with toper portion.

21. The resonator device of claim 20 wherein:

the inclination angle of the reflecting slope of the conical portion of the composite depression is designed such that: the heat flow parallel to the concave direction of the composite concave is reflected by the reflecting inclined plane and reaches the surface of the columnar part of the composite concave.

22. The resonator device of any of claims 1-21, wherein:

the heat absorbing structure is made of the following materials or a composite of the following materials: silicon dioxide, aluminum nitride, aluminum oxide, silicon nitride, beryllium oxide, polycrystalline diamond (PCD), monocrystalline silicon, polycrystalline silicon, germanium, silicon-containing polymers, epoxy, gold.

23. A filter, comprising:

a plurality of bulk acoustic wave resonator devices comprising at least one resonator device according to any of claims 7-22, wherein:

24. The filter of claim 23, wherein:

for each bulk acoustic wave resonator device, the filter is provided with the corresponding first and/or second heat absorbing structure.

25. The filter of claim 23, wherein:

for each series resonator device, the filter is provided with a corresponding first and/or second heat absorbing structure.

26. An electronic device comprising a resonator device according to any of claims 1-22, or a filter according to any of claims 23-25.