CN104752528A - Solar cell, preparation method thereof, and solar cell module comprising solar cell - Google Patents
Solar cell, preparation method thereof, and solar cell module comprising solar cell Download PDFInfo
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- CN104752528A CN104752528A CN201310740557.4A CN201310740557A CN104752528A CN 104752528 A CN104752528 A CN 104752528A CN 201310740557 A CN201310740557 A CN 201310740557A CN 104752528 A CN104752528 A CN 104752528A
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- copper
- powder
- conductive layer
- solar battery
- battery sheet
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- 238000002360 preparation method Methods 0.000 title claims abstract description 43
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 110
- 239000010949 copper Substances 0.000 claims abstract description 87
- 229910052802 copper Inorganic materials 0.000 claims abstract description 87
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 32
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 claims abstract description 17
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910003437 indium oxide Inorganic materials 0.000 claims abstract description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims abstract description 6
- 239000011787 zinc oxide Substances 0.000 claims abstract description 6
- 239000000843 powder Substances 0.000 claims description 56
- 239000002002 slurry Substances 0.000 claims description 47
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 40
- 238000004544 sputter deposition Methods 0.000 claims description 35
- 238000000034 method Methods 0.000 claims description 32
- 229910052782 aluminium Inorganic materials 0.000 claims description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 20
- 239000000377 silicon dioxide Substances 0.000 claims description 20
- 238000005245 sintering Methods 0.000 claims description 20
- 238000007639 printing Methods 0.000 claims description 19
- 230000005684 electric field Effects 0.000 claims description 18
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 16
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 16
- 239000004411 aluminium Substances 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 16
- 239000002184 metal Substances 0.000 claims description 16
- 239000011267 electrode slurry Substances 0.000 claims description 15
- 239000002245 particle Substances 0.000 claims description 15
- 230000001070 adhesive effect Effects 0.000 claims description 14
- 239000008246 gaseous mixture Substances 0.000 claims description 14
- 239000000853 adhesive Substances 0.000 claims description 12
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 11
- 239000001301 oxygen Substances 0.000 claims description 11
- 229910052760 oxygen Inorganic materials 0.000 claims description 11
- 230000008569 process Effects 0.000 claims description 11
- 229910052718 tin Inorganic materials 0.000 claims description 11
- 239000011230 binding agent Substances 0.000 claims description 9
- 239000007789 gas Substances 0.000 claims description 9
- 239000011521 glass Substances 0.000 claims description 9
- 230000003647 oxidation Effects 0.000 claims description 9
- 238000007254 oxidation reaction Methods 0.000 claims description 9
- 230000009467 reduction Effects 0.000 claims description 9
- 238000006722 reduction reaction Methods 0.000 claims description 9
- 229910052786 argon Inorganic materials 0.000 claims description 8
- 238000002156 mixing Methods 0.000 claims description 8
- 229910052757 nitrogen Inorganic materials 0.000 claims description 8
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 7
- 238000009792 diffusion process Methods 0.000 claims description 7
- 150000002739 metals Chemical class 0.000 claims description 7
- 239000000565 sealant Substances 0.000 claims description 7
- UGFAIRIUMAVXCW-UHFFFAOYSA-N Carbon monoxide Chemical compound [O+]#[C-] UGFAIRIUMAVXCW-UHFFFAOYSA-N 0.000 claims description 6
- 229910052787 antimony Inorganic materials 0.000 claims description 6
- 229910002091 carbon monoxide Inorganic materials 0.000 claims description 6
- 235000008216 herbs Nutrition 0.000 claims description 6
- 210000002268 wool Anatomy 0.000 claims description 6
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims description 5
- 229910052797 bismuth Inorganic materials 0.000 claims description 5
- 239000000203 mixture Substances 0.000 claims description 5
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims description 4
- 239000012298 atmosphere Substances 0.000 claims description 4
- 239000001257 hydrogen Substances 0.000 claims description 4
- 229910052739 hydrogen Inorganic materials 0.000 claims description 4
- 229910052745 lead Inorganic materials 0.000 claims description 4
- 238000001755 magnetron sputter deposition Methods 0.000 claims description 4
- 229910000410 antimony oxide Inorganic materials 0.000 claims description 3
- 239000002105 nanoparticle Substances 0.000 claims description 3
- 238000003854 Surface Print Methods 0.000 claims description 2
- 230000009466 transformation Effects 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 abstract description 26
- 239000004332 silver Substances 0.000 abstract description 26
- 229910052710 silicon Inorganic materials 0.000 abstract description 21
- 239000010703 silicon Substances 0.000 abstract description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract description 20
- 238000005516 engineering process Methods 0.000 abstract description 8
- 238000003466 welding Methods 0.000 abstract description 5
- 229910001887 tin oxide Inorganic materials 0.000 abstract description 3
- 239000000758 substrate Substances 0.000 abstract 3
- 239000010410 layer Substances 0.000 description 58
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 24
- 238000012360 testing method Methods 0.000 description 12
- 229910052581 Si3N4 Inorganic materials 0.000 description 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 10
- 238000003756 stirring Methods 0.000 description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 9
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 7
- 229910045601 alloy Inorganic materials 0.000 description 6
- 239000000956 alloy Substances 0.000 description 6
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- OAYXUHPQHDHDDZ-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethanol Chemical compound CCCCOCCOCCO OAYXUHPQHDHDDZ-UHFFFAOYSA-N 0.000 description 4
- 229910006404 SnO 2 Inorganic materials 0.000 description 4
- 229920002472 Starch Polymers 0.000 description 4
- 230000003667 anti-reflective effect Effects 0.000 description 4
- 239000012752 auxiliary agent Substances 0.000 description 4
- 239000000463 material Substances 0.000 description 4
- 238000002844 melting Methods 0.000 description 4
- 230000008018 melting Effects 0.000 description 4
- 239000008107 starch Substances 0.000 description 4
- 235000019698 starch Nutrition 0.000 description 4
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 3
- 238000005530 etching Methods 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N ether Substances CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- 239000007791 liquid phase Substances 0.000 description 3
- 239000012046 mixed solvent Substances 0.000 description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 3
- 229920005591 polysilicon Polymers 0.000 description 3
- 238000007650 screen-printing Methods 0.000 description 3
- RBNWAMSGVWEHFP-UHFFFAOYSA-N trans-p-Menthane-1,8-diol Chemical group CC(C)(O)C1CCC(C)(O)CC1 RBNWAMSGVWEHFP-UHFFFAOYSA-N 0.000 description 3
- VXQBJTKSVGFQOL-UHFFFAOYSA-N 2-(2-butoxyethoxy)ethyl acetate Chemical compound CCCCOCCOCCOC(C)=O VXQBJTKSVGFQOL-UHFFFAOYSA-N 0.000 description 2
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- 239000001856 Ethyl cellulose Substances 0.000 description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 description 2
- 229910017835 Sb—Sn Inorganic materials 0.000 description 2
- 229910000831 Steel Inorganic materials 0.000 description 2
- ZFOZVQLOBQUTQQ-UHFFFAOYSA-N Tributyl citrate Chemical compound CCCCOC(=O)CC(O)(C(=O)OCCCC)CC(=O)OCCCC ZFOZVQLOBQUTQQ-UHFFFAOYSA-N 0.000 description 2
- 239000007767 bonding agent Substances 0.000 description 2
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- 239000013078 crystal Substances 0.000 description 2
- DOIRQSBPFJWKBE-UHFFFAOYSA-N dibutyl phthalate Chemical compound CCCCOC(=O)C1=CC=CC=C1C(=O)OCCCC DOIRQSBPFJWKBE-UHFFFAOYSA-N 0.000 description 2
- 238000009826 distribution Methods 0.000 description 2
- 229920001249 ethyl cellulose Polymers 0.000 description 2
- 235000019325 ethyl cellulose Nutrition 0.000 description 2
- BXWNKGSJHAJOGX-UHFFFAOYSA-N hexadecan-1-ol Chemical compound CCCCCCCCCCCCCCCCO BXWNKGSJHAJOGX-UHFFFAOYSA-N 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
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- 239000000075 oxide glass Substances 0.000 description 2
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- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- RZVAJINKPMORJF-UHFFFAOYSA-N Acetaminophen Chemical compound CC(=O)NC1=CC=C(O)C=C1 RZVAJINKPMORJF-UHFFFAOYSA-N 0.000 description 1
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 description 1
- 239000001293 FEMA 3089 Substances 0.000 description 1
- 229910020220 Pb—Sn Inorganic materials 0.000 description 1
- 239000004952 Polyamide Substances 0.000 description 1
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 1
- 229910020830 Sn-Bi Inorganic materials 0.000 description 1
- 229910018728 Sn—Bi Inorganic materials 0.000 description 1
- 229910007570 Zn-Al Inorganic materials 0.000 description 1
- 229920000180 alkyd Polymers 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 239000006117 anti-reflective coating Substances 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 239000010953 base metal Substances 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 239000004359 castor oil Substances 0.000 description 1
- 235000019438 castor oil Nutrition 0.000 description 1
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- 238000000576 coating method Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 239000003085 diluting agent Substances 0.000 description 1
- 229910001882 dioxygen Inorganic materials 0.000 description 1
- 238000003618 dip coating Methods 0.000 description 1
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- 230000005611 electricity Effects 0.000 description 1
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- 230000003628 erosive effect Effects 0.000 description 1
- ZEMPKEQAKRGZGQ-XOQCFJPHSA-N glycerol triricinoleate Natural products CCCCCC[C@@H](O)CC=CCCCCCCCC(=O)OC[C@@H](COC(=O)CCCCCCCC=CC[C@@H](O)CCCCCC)OC(=O)CCCCCCCC=CC[C@H](O)CCCCCC ZEMPKEQAKRGZGQ-XOQCFJPHSA-N 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
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- 201000001371 inclusion conjunctivitis Diseases 0.000 description 1
- 239000002346 layers by function Substances 0.000 description 1
- LQBJWKCYZGMFEV-UHFFFAOYSA-N lead tin Chemical compound [Sn].[Pb] LQBJWKCYZGMFEV-UHFFFAOYSA-N 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000615 nonconductor Substances 0.000 description 1
- 239000004843 novolac epoxy resin Substances 0.000 description 1
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- 229920001568 phenolic resin Polymers 0.000 description 1
- 239000005011 phenolic resin Substances 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- SJWPTBFNZAZFSH-UHFFFAOYSA-N pmpp Chemical group C1CCSC2=NC=NC3=C2N=CN3CCCN2C(=O)N(C)C(=O)C1=C2 SJWPTBFNZAZFSH-UHFFFAOYSA-N 0.000 description 1
- 229920002647 polyamide Polymers 0.000 description 1
- 229920000647 polyepoxide Polymers 0.000 description 1
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- 229910000077 silane Inorganic materials 0.000 description 1
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- 238000007613 slurry method Methods 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
- 238000005477 sputtering target Methods 0.000 description 1
- 125000004079 stearyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
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- STCOOQWBFONSKY-UHFFFAOYSA-N tributyl phosphate Chemical compound CCCCOP(=O)(OCCCC)OCCCC STCOOQWBFONSKY-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/042—PV modules or arrays of single PV cells
- H01L31/048—Encapsulation of modules
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
Abstract
The invention provides a solar cell, which comprises a silicon substrate sheet, a conductive layer covering the front surface of the silicon substrate sheet, a copper front electrode arranged on the surface of the conductive layer, a back surface field arranged on the back face of the silicon substrate sheet, and a back electrode conducted with the back surface field, wherein the conductive layer is an aluminum-doped zinc oxide layer, a tin-doped indium oxide layer, an antimony-doped tin oxide layer or a tin dioxide layer. The invention also provides a solar cell preparation method and a solar cell module comprising the solar cell. The copper back electrode and the copper front electrode obtained by using the technology of the invention have good appearances, strength of welding between the electrodes and a photovoltaic welding strip and electric performance of the cell remain almost the same as those of a battery with silver electrodes prepared by the traditional technology, and in addition, as copper paste is adopted to replace the traditional silver paste, the cost of the cell is greatly reduced.
Description
Technical field
The invention belongs to area of solar cell, particularly relate to a kind of solar battery sheet and preparation method thereof, solar module containing this cell piece.
Background technology
Crystal silicon solar energy battery is the leading products on photovoltaic market, and conductor paste is the main auxiliary material making crystal silicon solar energy battery.Electrocondution slurry is material cost item maximum except silicon materials on cell piece, and such slurry forms primarily of mixed rollings such as metal powder, unorganic glass powder, organic carriers, and its kind has phototropic face silver slurry, shady face silver slurry, back electric field aluminum pulp etc.
Following direction is had at present, 1, improve the photoelectric conversion efficiency of battery at the high performance slurry of preparation to the research of crystal-silicon solar cell electrocondution slurry; 2, reduce battery unit power usage of sizing agent, especially for silver slurry, rete as thinner in printing, adopts finer and closely woven silk screen etc., and phototropic face main grid adopts fretwork technology, back of the body silver electrode strip adoption Disjunct distribution design etc.; 3, adopt base metal slurry to substitute silver and starch the electrode slurry being used as solar cell.
Publication number is that the patent of CN102810344A discloses a kind of rear surface of solar cell electrode containing silver-plated copper slurry and preparation method thereof, specifically disclose this slurry to comprise adhesive, form containing aluminium powder and diluent, the described aluminium powder that contains is mixed by silver powder, silver-plated copper powder and glass dust.This patent is to replace current part silver powder as conducting powder containing silver-plated copper powder, can at the production cost to a certain degree reducing cell piece, but the silver layer of silver-plated copper powder very thin (being generally less than 100nm), as as front electrode slurry, when sintering, the copper of silver layer inside has the possibility migrating into battery, and copper likely forms less sub-complex centre, considerably increases the risk that battery makes like this.
Publication number be CN103325856A patent discloses a kind of copper electrode solar battery sheet; described solar battery sheet has included silicon chip, silicon nitride anti-reflecting film, diaphragm, aluminium back surface field electrode, copper back electrode and the copper positive electrode that system knot processes; silicon nitride anti-reflecting film covers front side of silicon wafer; diaphragm covers on silicon nitride anti-reflecting film; silicon chip back side is printed on aluminium back surface field electrode and copper back electrode, is printed on copper positive electrode on front side of silicon wafer diaphragm.This patent is using copper electrode as back electrode and positive electrode; avoid with silver as electrode; save cost; but in this invention, adopt the silicon nitride layer of 5 ~ 100 nanometers as antireflection film layer, silicon nitride is non-conductor; if in this invention adopt front copper slurry in follow-up sintering process not through silicon nitride anti-reflecting film layer; then diaphragm and copper front electrode, cannot form conductive path with the photo-generated carrier that produces in silicon, copper electrode also just cannot draw photogenerated current.If adopt copper slurry in front in sintering process, form the path of charge carrier through silicon nitride anti-reflecting film layer; then copper atom then infiltrates through diffusion layer and causes erosion; thus have a strong impact on the efficiency of battery; and; the protective layer that dip-coating method or spin-coating method obtain is adopted in this invention; its thickness is difficult to control, and distribution is also very uneven.
Summary of the invention
When the present invention is solution existing solar battery sheet copper electrode, copper atom enters in the silicon of N+ type through antireflection film layer and forms impurity, affect the technical problem of the performance of silica-based body piece, a kind of solar battery sheet containing special conductive layer is provided, this special conductive layer plays the effect of antireflective and conduction simultaneously, and can stop entering in silicon through conductive layer of copper atom in copper electrode.
The invention provides a kind of solar battery sheet, described solar battery sheet comprises silica-based body piece, is covered in the conductive layer of silica-based body piece front surface, is arranged at the copper front electrode of conductive layer surface, is arranged at the back of the body electric field at the silica-based body piece back side and the backplate with the conducting of back of the body electric field; Described conductive layer is mix the zinc oxide film of aluminium, the indium oxide layer of mixing tin, the stannic oxide layer mixing antimony or tin dioxide layer.
Present invention also offers the preparation method of described solar battery sheet, the method comprises prepares conductive layer, copper positive electrode and the back of the body electric field, back electrode respectively by the silica-based body piece front and back after carrying out making herbs into wool, diffusion, the process of removal phosphorosilicate glass successively, namely obtains solar battery sheet.
Solar battery sheet of the present invention, not containing conventional antireflection film layer, conductive layer AZO(mixes the zinc oxide of aluminium), ITO(mixes the indium oxide of tin), ATO (mixing the tin oxide of antimony) or SnO
2(tin ash) has the effect of antireflective and conduction simultaneously.More than preparing during this functional layer, the dioxygen oxidation in the sputtered room of the elemental metals in sputtering target material, therefore do not contain elemental metal in conductive layer, in follow-up sintering process, can not there is oxidized phenomenon in conductive layer.On this conductive layer, print copper is starched and after sintering, this conductive layer also can not be starched by copper in material destroy, thus copper atom can be stoped to pass conductive layer and enter in the silicon of N+ type, avoid copper atom and doping is formed on bulk silicon and causes the impact on battery efficiency.This conductive layer also just serves the effect on barrier layer.
Present invention also offers a kind of solar module, described solar module comprises the backboard, sealant layer, cell piece, sealant layer and the photic zone that stack gradually; Described cell piece is solar battery sheet of the present invention.
Solar module of the present invention the battery of silver electrode that also makes with traditional handicraft of every electrical property remain basically stable, and the present invention adopts copper to starch and substitutes traditional silver slurry, considerably reduce the cost of battery.
Embodiment
In order to make technical problem solved by the invention, technical scheme and beneficial effect clearly understand, below in conjunction with embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
The invention provides a kind of solar battery sheet, described solar battery sheet comprises silica-based body piece, is covered in the conductive layer of silica-based body piece front surface, is arranged at the copper front electrode of conductive layer surface, is arranged at the back of the body electric field at the silica-based body piece back side and the backplate with the conducting of back of the body electric field; Described conductive layer is mix the zinc oxide film of aluminium, the indium oxide layer of mixing tin, the stannic oxide layer mixing antimony or tin dioxide layer.
According to solar battery sheet provided by the present invention, the kind of conductive layer (antireflection layer) material is different, its refractive index and square resistance rate also different, consider the effect of antireflective and conduction, preferably, the thickness of described conductive layer is 50-100nm.
According to solar battery sheet provided by the present invention, in order to cost-saving further, preferably, described backplate is copper electrode.
According to solar battery sheet provided by the present invention, preferably, described copper front electrode and copper backplate contain copper powder and inorganic binder; Described inorganic binder is elemental metals powder and/or alloyed powder; Described elemental metals powder is at least one in Pb, Sn, Bi, Sb, copper nanoparticle and nano-silver powder; Described alloyed powder is the alloyed powder that in Pb, Sn, Bi, Sb, at least two kinds are formed.
Copper front electrode of the present invention and copper backplate contain copper powder and inorganic binder, inorganic matter bonding agent of the present invention is different from the inorganic adhesive (as bismuth Pyrex etc.) of oxide glass, oxide glass melting corrodes such oxide conductive film, metal species inorganic matter bonding agent then can not corrode oxide conductive film, therefore, in sintering process, conductive layer prepared by the present invention can not be destroyed, and stops the copper atom in conductive copper slurry to enter in the silicon of N+ type through conductive layer further.
According to solar battery sheet provided by the present invention, in order to improve electric conductivity and the adhesive property of electrode further, preferably, the weight ratio of inorganic binder described in electrode and copper powder is 1:6.0-35, more preferably 1:10-30.
According to solar battery sheet provided by the present invention, for ensureing the conductivity of electrode, the application property of copper slurry and adhesive property, preferably, the middle particle diameter D of described copper powder
50for 0.2-2.0 μm, specific area 2.0m
2/ g, tap density 3.5g/cm
3.
According to solar battery sheet provided by the present invention, preferably, the middle particle diameter D of described elemental metals powder
50for 0.1-1.0 μm, the middle particle diameter D of described alloyed powder
50for 0.1-1.0 μm.
According to solar battery sheet provided by the present invention, in order to make reaction carry out more smoothly, preferably, described alloyed powder occurs that the temperature of phase transformation is 150-550 DEG C.
The invention provides the preparation method of described solar battery sheet, the method comprises prepares conductive layer, copper front electrode and the back of the body electric field, back electrode respectively by the silica-based body piece front and back after carrying out making herbs into wool, diffusion, the process of removal phosphorosilicate glass successively, namely obtains solar battery sheet.
The invention provides the preparation method of described solar battery sheet, not containing conventional antireflection film layer, conductive layer AZO(mixes the zinc oxide of aluminium), ITO(mixes the indium oxide of tin), ATO (mixing the tin oxide of antimony) or SnO
2(tin ash) has the effect of antireflective and conduction simultaneously.The invention provides the preparation method of described solar battery sheet, preferably, the described method preparing copper front electrode being dried for crossing in continuous tunnel furnace after conductive layer surface print copper front electrode slurry, being oxidized, being reduced and sintering; The method preparing back of the body electric field and back electrode is cross in continuous tunnel furnace to dry, be oxidized, reduce and sinter after the back up of silica-based body piece is carried on the back electric field slurry and printed back electrode slurry.
The invention provides the preparation method of described solar battery sheet, preferably, described prepare conductive layer, copper front electrode and back of the body electric field, back electrode method for preparing conductive layer, print copper front electrode slurry and the printing back of the body electric field slurry, back electrode slurry respectively at silica-based body piece front and back, then cross in continuous tunnel furnace dry, oxidation, reduction and sintering.
After preparing conductive layer, the conductive copper slurry adopting 280 order silk screen printing 2-4mm wide forms copper backplate, copper backplate printing weight in wet base is 80-100mg for printing weight in wet base, the temperature of 200-300 DEG C is adopted to dry, in the shady face part of copper backplate remainder, adopt 280 order printing back field aluminum pastes (Taiwan large standing grain science and technology 108C aluminium paste), the printing weight in wet base of aluminium paste is 1.30-1.50g, dries.Then 360 orders, live width is adopted to be that conductive copper slurry of the present invention is printed on the phototropic face of silica-based body piece by the half tone of 70 μm, printing weight in wet base is 100-130mg, then enter in continuous tunnel furnace through drying section, oxidation panel, reduction section, sintering stage, cooling section, the whole time crossing continuous tunnel furnace is 2-3 minute, namely obtains finished product solar cell piece after coming out of the stove.
According to preparation method provided by the present invention, preferably, described bake out temperature is 200-400 DEG C, and the time is 20-30 second; The temperature of described oxidation is 400-600 DEG C, and the time is 15-25 second.
According to preparation method provided by the present invention, preferably, the reducing atmosphere of described reduction is the gaseous mixture of carbon monoxide and nitrogen, or the gaseous mixture of hydrogen and nitrogen; Wherein shared by hydrogen or carbon monoxide, the percent by volume of gaseous mixture is 5.0-10%; The temperature of described reduction is 600-700 DEG C, and the time is 20-30 second.
According to preparation method provided by the present invention, preferably, described sintering and cooling carry out in the gaseous mixture of air and nitrogen; Wherein oxygen is 10-20ppm at the volume content of gaseous mixture, and the temperature of sintering is 700-800 DEG C, and the time is 3-5 second; The temperature of cooling is 700-200 DEG C, and temperature retention time is 20-40 second.
According to preparation method provided by the present invention, preferably, be 100 mass parts with the total amount of described copper positive electrode slurry, described copper positive electrode slurry is containing the copper powder of promising 60-85 mass parts, the inorganic adhesive of 4.0-6.0 mass parts, the organic carrier of 5.0-15 mass parts.
According to preparation method provided by the present invention, preferably, described back electrode is copper backplate, described copper backplate is obtained by print copper backplate slurry, be 100 mass parts with the total amount of described copper backplate slurry, described copper backplate slurry contains the copper powder of 50-70 mass parts, the inorganic adhesive of 2.0-8.0 mass parts, the organic carrier of 25-45 mass parts.
The preparation method of described copper front electrode slurry and copper backplate slurry is, organic carrier is placed in the stainless cylinder of steel of high speed dispersor, adds inorganic adhesive, stir evenly while stirring; Add copper powder several times, add at every turn and first stir evenly, then add next time; After all adding, stir evenly at a high speed; Repeatedly be ground to fineness with three-roll grinder again and be less than 10 μm, conductive copper slurry.
The outward appearance that employing present invention process obtains copper front electrode and copper backplate is good, the battery of the silver electrode that the weld strength of electrode, every electrical property of cell piece also make with traditional handicraft remains basically stable, further, adopt copper slurry to substitute traditional silver slurry, considerably reduce the cost of battery.
Described organic carrier comprises thickener, solvent and auxiliary agent.Described thickener has no particular limits, and the various thickeners can commonly used for this area, as being at least one in ethyl cellulose, NC Nitroncellulose, alkyd resins, phenolic resins, epoxy resin, novolac epoxy resin.Described solvent is terpinol, two or more in butyl carbitol, butyl carbitol acetate, turpentine oil, butyl glycol ether, dibutyl phthalate, ethylene glycol ether acetate, tributyl citrate, butyl carbitol acetate and tributyl phosphate mixes.Described auxiliary agent is at least one in polyamide powder, modified hydrogenated castor oil, hexadecanol and octadecyl alcolol.
In described organic carrier, the content of each component is in the usual range of this area, and the present invention does not have particular provisions.Such as, with the gross mass of organic carrier for benchmark, wherein the content of thickener is 4-10wt%, and the content of auxiliary agent is 1-5wt%, and the content of organic solvent is 85-95wt%.As a kind of preferred implementation of the present invention, described organic solvent is the mixture of terpinol, ethylene glycol ether acetate and butyl carbitol.More preferably in situation, with the organic solvent of 100 weight portions for benchmark, wherein the content of terpinol is 55-65 weight portion, and the content of ethylene glycol ether acetate is 15-25 weight portion, and the content of butyl carbitol is 15-25 weight portion.
Thickener, auxiliary agent are dissolved in mixed solvent that above-mentioned organic solvent forms by described organic carrier preparation method, make it fully dissolve and stir, obtain organic carrier at 50-70 DEG C.
According to preparation method provided by the present invention, preferably, the described method preparing conductive layer is magnetron sputtering; The condition of described magnetron sputtering is: sputtering pressure is 0.3-1.0Pa, and underlayer temperature is 200-300 DEG C, and the flow-rate ratio of oxygen and argon gas is 1:1-8, and sputtering power is 20-100W, and sputtering time is 1000-5000 second.
Present invention also offers a kind of solar module, described solar module comprises the backboard, sealant layer, cell piece, sealant layer and the photic zone that stack gradually; Described cell piece is solar battery sheet of the present invention.
Backboard described above, sealant layer and photic zone are that this area is commonly used, and do not repeat them here.
The present invention is described further for embodiment of passing through below.
embodiment 1
Step one: the preparation of conductive copper slurry
The preparation of a, organic carrier: according to quality than lauryl alcohol ester: the organic solvent of butyl carbitol=70:30 mixes, the mixed solvent of composition slurry.Get the mixed solvent of 90.5 mass parts, add ethyl cellulose STD-4 (the LG-DOW product of 8.0 mass parts, viscosity specification is 4mPas), the rilanit special of 0.5 mass parts, the hexadecanol of 1.0 mass parts, is heated to 65 DEG C, makes it fully dissolve, and stir 4 hours, obtain organic carrier.
The preparation of b, inorganic adhesive: particle diameter D in employing
50be that the Pb powder of 0.30 ± 0.1 μm is as the inorganic adhesive of copper electrocondution slurry.
The preparation of c, copper slurry: the organic carrier of 10 mass parts is stirred the stainless cylinder of steel being placed in high speed dispersor, adds the fine Pb powder of 5.0 mass parts as inorganic adhesive, stirs evenly while stirring; Add fine copper powder (the middle particle diameter D of 85 mass parts several times
50be 0.60 ± 0.15 μm, specific area is 2.5m
2/ g, tap density is 3.8g/cm
3), add at every turn and first stir evenly, then add next time; After all adding, stir evenly at a high speed; Repeatedly be ground to fineness with three-roll grinder again and be less than 10 μm, conductive copper slurry.
Step 2: the preparation of conductive layer
The polysilicon chip specification adopted is: 156 × 156
.Thickness is 200 μm (before corrosion), and before printing, thickness is 180 μm.In cell silicon chip making herbs into wool, diffusion, etching, after dephosphorization silex glass technique, silicon chip is fixing on slide holder, then put it in sputtering chamber, to be fixed in chamber in advance, then put it in sputtering chamber, carry out to be fixed on Zn-Al in chamber (Al is the mass fraction of 3.0%) metal targets in advance, close sputtering chamber door, chamber is vacuumized, arranging sputtering pressure is 0.6Pa, the flow-rate ratio 10:40 (volume flow ml/min) of oxygen and argon gas, sputtering power is 55W, sputtering time is 2212 seconds, realize the deposition of AZO film, testing the thickness of AZO film obtained is the probe-type step instrument measurement that the thickness of 78 ± 2.0nm(film is produced by Ambious Technology Inc company of the U.S., lower same).
Step 3: the preparation of copper electrode
Obtain the conductive layer of silica-based body piece in step 2 after, adopt the conductive copper slurry that 280 order screen printing step one obtain again, the printing weight in wet base of the conductive copper slurry of copper backplate is 85mg, and printing width is 3mm, can print continuous print three band, the temperature of 300 DEG C is dried.Starch remaining back portion at printed back copper, adopt 280 order printing back field aluminum pastes (Taiwan large standing grain science and technology 108C aluminium paste), the printing weight in wet base of aluminium paste is 1.40g, dries, then adopts 360 orders, live width to be 70
half tone conductive copper slurry that step 1 is obtained be printed on the front (phototropic face) of silica-based body piece, printing weight in wet base is 115mg, then enter in continuous tunnel furnace, through drying section, oxidation panel, reduction section, sintering stage, cooling section, wherein drying with the atmosphere of oxidation panel is normal air, and drying section temperature is 200 DEG C, and temperature retention time is 25 seconds; The temperature of oxidation panel is 400 DEG C, and temperature retention time is 20 seconds; The reducing atmosphere of reduction section is the gaseous mixture of carbon monoxide and nitrogen; Wherein the percent by volume of gaseous mixture shared by carbon monoxide is 7.0%, and temperature is 600 DEG C, and temperature retention time is 25 seconds; Sintering stage and cooling section be the gaseous mixture of air and nitrogen, wherein oxygen is 18ppm at the volume content of gaseous mixture, and sintering stage temperature is 700 DEG C, and temperature retention time is 3 seconds; Cooling section temperature is 200 DEG C, and temperature retention time is 30 seconds.The whole time crossing continuous tunnel furnace is 2 minutes about 35 seconds, after coming out of the stove, and obtains the crystalline silicon solar cell piece S1 that shady face has aluminium back surface field, backplate is Continuous Copper electrode, front (phototropic face) is copper gate electrode.
embodiment 2
Prepare solar battery sheet S2 according to the method for embodiment 1, difference is: adopted by Pb powder wherein the mixed powder (mass ratio Pb powder: Sn powder=1:1) of Pb powder and Sn powder to substitute, the middle particle diameter D of Pb powder and Sn powder
50be 0.30 ± 0.1 μm.
embodiment 3
Prepare solar battery sheet S3 according to the method for embodiment 1, difference is: adopted by Pb powder wherein the mixed powder (mass ratio Sn powder: Bi powder: Sb powder=1:1:1) of Sn powder, Bi powder and Sb powder to substitute, the middle particle diameter D of Sn powder, Bi powder and Sb powder
50be 0.30 ± 0.1 μm.
embodiment 4
Prepare solar battery sheet S4 according to the method for embodiment 1, difference is: in conductive copper slurry, copper powder: inorganic binder: the mass ratio of organic carrier is 80:5:15; In the preparation of inorganic adhesive, Pb-Sn alloyed powder is adopted by Pb powder wherein to substitute (mass ratio Pb:Sn=37:63, the middle particle diameter D of alloyed powder in alloy
50it is 0.30 ± 0.1 μm.Alloy starts melting and occurs that the temperature of liquid phase is about 230 DEG C); Sputtering ATO film is changed into by sputtering AZO film in the preparation of conductive layer in the step 2 in embodiment 1.Namely adopt to be fixed on Sb-Sn in chamber (Sn is the mass fraction of 5.0%) metal targets in advance to sputter, arranging sputtering pressure is 0.6Pa, the flow-rate ratio 15:42 (volume flow ml/min) of oxygen and argon gas, sputtering power is 75W, sputtering time is 2690 seconds, realize the deposition of ATO film, the thickness testing the ATO film obtained is 80 ± 2.0nm.
embodiment 5
Prepare solar battery sheet S5 according to the method for embodiment 1, difference is: Pb powder is wherein adopted Pb-Sn-Bi alloyed powder (mass ratio Pb:Sn:Bi=35:65:5, the middle particle diameter D of alloyed powder in alloy
50it is 0.30 ± 0.1 μm.Alloy starts melting and occurs that the temperature of liquid phase is 170 DEG C) substitute.Change sputtered film in the preparation of conductive layer in the step 2 in embodiment 1 into sputtering for Sn O
2film.Then adopt to be fixed in advance Sn metal targets in chamber to sputter, arranging sputtering pressure is 0.6Pa, and the flow-rate ratio 15:42 (volume flow ml/min) of oxygen and argon gas, sputtering power is 75W, and sputtering time is 2682 seconds, realizes SnO
2the deposition of film, tests the SnO obtained
2the thickness of film is 77 ± 2.0nm.
embodiment 6
Prepare solar battery sheet S6 according to the method for embodiment 1, difference is: (mass ratio Pb:Sn:Bi:Sb=30:60:7:3 in alloy, the middle particle diameter D50 of alloyed powder is 0.50 μm Pb powder wherein to be adopted Pb-Sn-Bi-Sb alloyed powder.Alloy starts melting and occurs that the temperature of liquid phase is 160 DEG C) substitute.Sputtering ITO film is changed into by sputtering AZO film in the preparation of conductive layer in the step 2 in embodiment 1.Then adopt to be fixed on In-Sn in chamber (Sn is the mass fraction of 5.0%) metal targets in advance to sputter, arranging sputtering pressure is 0.6Pa, the flow-rate ratio 15:42 (with volume flow ml/min) of oxygen and argon gas, sputtering power is 75W, sputtering time is 2767 seconds, realize the deposition of ito film, the thickness testing the ito film obtained is 86 ± 2.0nm.
embodiment 7
Prepare solar battery sheet S7 according to the method for embodiment 1, difference is: in conductive copper slurry, copper powder: inorganic binder: the mass ratio of organic carrier is 90:3:7; In the preparation of inorganic adhesive, Pb powder is wherein adopted nano-silver powder (particle diameter D in Nano Silver
50be 50 ~ 70nm) substitute; Change sputtered film in the preparation of conductive layer in the step 2 in embodiment 1 into sputtering for Sn O
2film.Then adopt to be fixed in advance Sn metal targets in chamber to sputter, arranging sputtering pressure is 0.6Pa, and the flow-rate ratio 15:42 (with volume flow ml/min) of oxygen and argon gas, sputtering power is 75W, and sputtering time is 2682 seconds, realizes SnO
2the deposition of film, tests the SnO obtained
2the thickness of film is 77 ± 2.0nm.
embodiment 8
Prepare solar battery sheet S8 according to the method for embodiment 1, difference is: in the preparation of inorganic adhesive, Pb powder is wherein adopted copper nanoparticle (particle diameter D in Nanometer Copper
50for 50-70nm) substitute.Sputtering ATO film is changed into by sputtering AZO film in the preparation of conductive layer in the step 2 in embodiment 1.Then adopt to be fixed on Sb-Sn in chamber (Sn is the mass fraction of 5.0%) metal targets in advance to sputter, arranging sputtering pressure is 0.6Pa, the flow-rate ratio 15:42 (with volume flow ml/min) of oxygen and argon gas, sputtering power is 75W, sputtering time is 2690 seconds, realize the deposition of ATO film, the thickness testing the ATO film obtained is 80 ± 2.0nm.
comparative example 1
Step one: phototropic face silver slurry adopts the 17A silver slurry of Dupont company, back silver slurry adopts the PV505 silver slurry of the said firm.
Step 2: the preparation of antireflective coating
The existing coating process of production line is adopted to prepare silicon nitride anti-reflecting film.
Silicon chip after the making herbs into wool of 156*156 P type polysilicon, diffusion, etching, dephosphorization silex glass is put into PECVD stove deposit, vacuum degree pressure is 25Pa, depositing temperature is 440 DEG C, the flow-rate ratio of ammonia and silane gas is 2786:214, power during deposition is 2900W, sedimentation time is 452 seconds, and testing the silicon nitride film thickness obtained is 75 ± 2.0nm.
Step 3: the preparation of silver electrode
Polysilicon chip specification is: 156 × 156mm, thickness is 200 μm (before corrosion), before printing, thickness is 180 μm, in cell silicon chip making herbs into wool, diffusion, etching, after dephosphorization silex glass technique, existing pecvd process is adopted to plate silicon nitride anti-reflecting film, adopt 280 order silk screen printing PV505 back silver slurries, the printing weight in wet base of back of the body silver slurry is that 40mg(adopts three lines, four sections of seal carving brushes), dry, in the remaining shady face part of back of the body silver slurry, same employing 280 order printing back field aluminum paste (Taiwan large standing grain science and technology 108C aluminium paste), the printing weight in wet base of aluminium paste is after 1.30g is dried, adopt 360 orders, live width is that the 17A phototropic face of Dupont company silver slurry is printed on the phototropic face of silicon chip by the half tone of 70 microns, printing weight in wet base is 100 ~ 120mg, then enter in continuous tunnel furnace and dry sintering, preheat temperature is 400 DEG C, peak temperature is 955 DEG C, the whole time crossing continuous tunnel furnace is about 2 minutes, peak value sintering time is about 1 second, obtain phototropic face, shady face electrode is the solar cell piece of silver electrode.The solar cell piece that this comparative example obtains is designated as CS1.
performance test
1, outward appearance: with 10 times of magnifying glasses observe solar cell piece electrode surface whether smooth, have trachoma or pin hole, if smooth surface, without the phenomenon such as plot point and hole, be then designated as OK, otherwise be designated as NG.The results are shown in Table 1.
2, weld strength (σ, unit is N): select victory footpath between fields, Shanghai 2*0.2mm tin lead welding band, soaks post-drying with Henkel X32-10I type scaling powder, then carries out manual welding at 330 DEG C to electrode.After cell piece cools naturally, use mountain degree SH-100 puller system to carry out tensile test along 135 ° of directions to it, test its Average peel force.The results are shown in Table 1.
3, short circuit current (Isc, unit is A), open circuit voltage (Voc, unit is V), the power of battery (Pmpp unit is W), series resistance (Rs, unit is m Ω), fill factor, curve factor (FF) and electricity conversion (Eta): use solar cell piece special test equipment, as single flash operation simulator is tested.Test condition is standard test condition (STC): light intensity: 1000W/m
2; Spectrum: AM1.5; Temperature: 25 DEG C.Method of testing is carried out according to IEC904-1.The results are shown in Table 1.
Table 1
。
Test result as can be seen from table 1 relatively, the outward appearance that employing present invention process obtains copper backplate and copper front electrode is good, the battery of the silver electrode that the weld strength of electrode and photovoltaic welding belt, every electrical property of cell piece also make with traditional handicraft remains basically stable, and, the present invention adopts copper to starch and substitutes traditional silver slurry, considerably reduce the cost of battery.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (17)
1. a solar battery sheet, it is characterized in that, described solar battery sheet comprises silica-based body piece, is covered in the conductive layer of silica-based body piece front surface, is arranged at the copper front electrode of conductive layer surface, is arranged at the back of the body electric field at the silica-based body piece back side and the backplate with the conducting of back of the body electric field; Described conductive layer is mix the zinc oxide film of aluminium, the indium oxide layer of mixing tin, the stannic oxide layer mixing antimony or tin dioxide layer.
2. solar battery sheet according to claim 1, is characterized in that, the thickness of described conductive layer is 50-100nm.
3. solar battery sheet according to claim 1 and 2, is characterized in that, described backplate is copper electrode.
4. solar battery sheet according to claim 3, is characterized in that, described copper front electrode and copper backplate contain copper powder and inorganic binder; Described inorganic binder is elemental metals powder and/or alloyed powder; Described elemental metals powder is at least one in Pb, Sn, Bi, Sb, copper nanoparticle and nano-silver powder; Described alloyed powder is the alloyed powder that in Pb, Sn, Bi, Sb, at least two kinds are formed.
5. solar battery sheet according to claim 4, is characterized in that, the weight ratio of described inorganic binder and copper powder is 1:6-35.
6. solar battery sheet according to claim 4, is characterized in that, the middle particle diameter D of described copper powder
50for 0.2-2.0 μm, specific area 2.0m
2/ g, tap density 3.5g/cm
3.
7. solar battery sheet according to claim 4, is characterized in that, the middle particle diameter D of described elemental metals powder
50for 0.1-1.0 μm, the middle particle diameter D of described alloyed powder
50for 0.1-1.0 μm.
8. solar battery sheet according to claim 4, is characterized in that, described alloyed powder occurs that the temperature of phase transformation is 150-550 DEG C.
9. the preparation method of the solar battery sheet described in a claim 1-8 any one, it is characterized in that, the method comprises prepares conductive layer, copper front electrode and the back of the body electric field, back electrode respectively by the silica-based body piece front and back after carrying out making herbs into wool, diffusion, the process of removal phosphorosilicate glass successively, namely obtains solar battery sheet.
10. preparation method according to claim 9, is characterized in that, the described method preparing copper front electrode being dried for crossing in continuous tunnel furnace after conductive layer surface print copper front electrode slurry, being oxidized, being reduced and sintering; The method preparing back of the body electric field and back electrode is cross in continuous tunnel furnace to dry, be oxidized, reduce and sinter after the back up of silica-based body piece is carried on the back electric field slurry and printed back electrode slurry.
11. preparation methods according to claim 9, it is characterized in that, described prepare conductive layer, copper front electrode and back of the body electric field, back electrode method for preparing conductive layer, print copper front electrode slurry and the printing back of the body electric field slurry, back electrode slurry respectively at silica-based body piece front and back, then cross in continuous tunnel furnace dry, oxidation, reduction and sintering.
12. preparation methods according to claim 10 or 11, it is characterized in that, described bake out temperature is 200-400 DEG C, and the time is 20-30 second; The temperature of described oxidation is 400-600 DEG C, and the time is 15-25 second.
13. preparation methods according to claim 10 or 11, it is characterized in that, the reducing atmosphere of described reduction is the gaseous mixture of carbon monoxide and nitrogen, or the gaseous mixture of hydrogen and nitrogen; Wherein shared by hydrogen or carbon monoxide, the percent by volume of gaseous mixture is 5.0-10%; The temperature of described reduction is 600-700 DEG C, and the time is 20-30 second.
14. preparation methods according to claim 10 or 11, is characterized in that, described sintering carries out in the gaseous mixture of air and nitrogen; Wherein oxygen is 10-20ppm at the volume content of gaseous mixture, and the temperature of sintering is 700-800 DEG C, and the time is 3-5 second.
15. preparation methods according to claim 9, it is characterized in that, be 100 mass parts with the total amount of described copper positive electrode slurry, and described copper positive electrode slurry is containing the copper powder of promising 60-85 mass parts, the inorganic adhesive of 4.0-6.0 mass parts, the organic carrier of 5.0-15 mass parts.
16. preparation methods according to claim 9, is characterized in that, the described method preparing conductive layer is magnetron sputtering; The condition of described magnetron sputtering is: sputtering pressure is 0.3-1.0Pa, and underlayer temperature is 200-300 DEG C, and the flow-rate ratio of oxygen and argon gas is 1:1-8, and sputtering power is 20-100W, and sputtering time is 1000-5000 second.
17. 1 kinds of solar modules, is characterized in that, described solar module comprises the backboard, sealant layer, cell piece, sealant layer and the photic zone that stack gradually; Described cell piece is the solar battery sheet described in any one of claim 1-8.
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| CN106169318A (en) * | 2015-05-22 | 2016-11-30 | 川锡科研有限公司 | Conductive paste composition, conductive structure and forming method thereof |
| CN106098808A (en) * | 2016-08-10 | 2016-11-09 | 中国科学院电工研究所 | A kind of crystal silicon solar battery base metal front electrode and preparation method thereof |
| CN106251929A (en) * | 2016-08-10 | 2016-12-21 | 中国科学院电工研究所 | Copper slurry for crystal silicon solar battery front side conductive layer electrode and preparation method thereof |
| CN106505110A (en) * | 2016-10-14 | 2017-03-15 | 南昌大学 | Sn Bi bases solder is used for making silicon/crystalline silicon heterojunction solar cel electrode |
| CN112768163A (en) * | 2021-01-06 | 2021-05-07 | 肇庆市鼎湖正科集志电子有限公司 | Bismuth-doped copper electrode of strontium titanate annular piezoresistor and preparation method thereof |
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