CN104752191A - Inductive Coupled Plasma (ICP) processing chamber, gas injection device thereof and Through-Silicon-Via (TSV) etching method - Google Patents
Inductive Coupled Plasma (ICP) processing chamber, gas injection device thereof and Through-Silicon-Via (TSV) etching method Download PDFInfo
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- CN104752191A CN104752191A CN201310751344.1A CN201310751344A CN104752191A CN 104752191 A CN104752191 A CN 104752191A CN 201310751344 A CN201310751344 A CN 201310751344A CN 104752191 A CN104752191 A CN 104752191A
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- 238000005530 etching Methods 0.000 title claims abstract description 69
- 238000000034 method Methods 0.000 title claims abstract description 65
- 238000002347 injection Methods 0.000 title claims abstract description 36
- 239000007924 injection Substances 0.000 title claims abstract description 36
- 230000001939 inductive effect Effects 0.000 title description 2
- 230000008021 deposition Effects 0.000 claims description 56
- 230000008878 coupling Effects 0.000 claims description 34
- 238000010168 coupling process Methods 0.000 claims description 34
- 238000005859 coupling reaction Methods 0.000 claims description 34
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 20
- 239000010703 silicon Substances 0.000 claims description 20
- 238000009832 plasma treatment Methods 0.000 claims description 11
- 230000002045 lasting effect Effects 0.000 claims description 7
- 239000007789 gas Substances 0.000 abstract description 126
- 238000006243 chemical reaction Methods 0.000 abstract description 7
- 230000000149 penetrating effect Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 description 14
- 239000010410 layer Substances 0.000 description 8
- 238000009413 insulation Methods 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 238000000992 sputter etching Methods 0.000 description 4
- 229920000642 polymer Polymers 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 230000000694 effects Effects 0.000 description 2
- 239000011810 insulating material Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 239000003595 mist Substances 0.000 description 2
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 2
- 230000002093 peripheral effect Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 1
- 230000001351 cycling effect Effects 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 238000010494 dissociation reaction Methods 0.000 description 1
- 230000005593 dissociations Effects 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000007667 floating Methods 0.000 description 1
- 229920002313 fluoropolymer Polymers 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
- 238000001020 plasma etching Methods 0.000 description 1
- 239000013047 polymeric layer Substances 0.000 description 1
- 230000003252 repetitive effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- General Physics & Mathematics (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
- Plasma Technology (AREA)
Abstract
The invention provides an ICP processing chamber, a gas injection device thereof and a TSV etching method. The ICP processing chamber comprises a columnar chamber, and the gas injection device is circular and is arranged above the periphery of the side wall of the ICP processing chamber. The gas injection device comprises an upper structure and a lower structure. A first gas injection port and a second gas injection port penetrating the inside of the chamber are formed in the upper structure and the lower structure respectively to supply process reaction gases for the inside of the chamber. By means of the chamber, the device and the method, pressure in the chamber can be stabilized, the etching terminal test accuracy is improved, and the etching graph quality is guaranteed.
Description
Technical field
The present invention relates to field of semiconductor manufacture, particularly relate to a kind of ICP plasma process chamber and gas injection apparatus thereof, silicon etching method for forming through hole.
Background technology
In technical field of manufacturing semiconductors, at MEMS(Micro-Electro-MechanicalSystems, MEMS (micro electro mechanical system)) and the field such as 3D encapsulation technology, usually need to carry out deep via etching to materials such as silicon.Such as, in body silicon etching technology, the degree of depth of dark silicon through hole (Through-Silicon-Via, TSV) reaches hundreds of micron, its depth-to-width ratio even much larger than 10, usually adopts deep reaction ion etching method to etch body silicon and is formed.
In prior art, the usual Bosch technique of deep reaction ion etching of TSV is carried out.As shown in Figure 1, wherein, substrate silicon is layer to be etched, and it does mask layer to form figure, mask layer is generally SiO
2or Si
3n
4, mainly play mask effect in etching process.Concrete deep reaction ion etching method comprises the following steps: (1) etch step, usually uses Ar, SF
6mist carry out plasma etching, (2) side wall deposition step, usual Ar and C
4f
8mist hole medial surface formed fluorocarbon polymer layer, its thickness is generally at nanoscale, sometimes be passivation layer also referred to as this polymeric layer, (3) etch step and side wall deposition step hocket, until dark silicon via etch completes, in etch step, due to the inner surface of hole, especially at hole medial surface deposited polymer, polymer bottom the plasma bombardment of vertical incidence, the etching of vertical direction is made to continue to carry out downwards, and the reservation due to polymer of sidewall is so etching rate is very low, thus ensure that the anisotropy of whole hole etching process.
In the prior art, etching gas and sidewall deposition gas enter chamber interior by unified gas inject mouth, due to varying in weight of two kinds of gases, alternately repeat to pass in the process of chamber at two kinds of gases, and chamber interior pressure can be caused to produce larger change.
Summary of the invention
For the problems referred to above in background technology, the present invention proposes a kind of ICP plasma process chamber and gas injection apparatus thereof, silicon etching method for forming through hole.
First aspect present invention provides a kind of gas injection apparatus for described inductance coupling high type plasma treatment chamber, wherein, described inductance coupling high type plasma process chamber comprises a column chamber, described gas injection apparatus is ring-type, it is arranged at above the side wall perimeter of described inductance coupling high type plasma processing chamber chamber room, described gas injection apparatus comprises upper and lower double-layer structure, the the first gas inject mouth and the second gas inject mouth that are through to chamber interior is respectively arranged with, to supply processing procedure reacting gas to chamber interior among described upper and lower double-layer structure.
Further, described first gas inject mouth and the second gas inject mouth supply the first reacting gas and the second reacting gas respectively to chamber interior.
Further, described first reacting gas is etching gas, and described second reacting gas is sidewall deposition gas.
Further, pass into chamber interior to described etching gas and sidewall deposition gas alternate cycles, wherein, the time of implementation of described etching gas and described sidewall deposition gas is identical.
Further, described etching gas also passes into chamber in lasting confession at once in each sidewall deposition gas.
Further, described etching gas is C
4f
8, sidewall deposition gas is SF
6.
Second aspect present invention provides a kind of described inductance coupling high type plasma treatment chamber, described inductance coupling high type plasma process chamber comprises a column chamber, further, described inductance coupling high type plasma treatment chamber comprises the gas injection apparatus described in first aspect present invention, described gas injection apparatus is ring-type, and it is arranged at above the side wall perimeter of described inductance coupling high type plasma processing chamber chamber room.
Third aspect present invention provides a kind of silicon etching method for forming through hole performed in inductance coupling high type plasma process chamber, described inductance coupling high type plasma treatment chamber comprises the gas injection apparatus described in first aspect present invention, wherein, described silicon etching method for forming through hole comprises the process cycle step repeatedly repeated, described process cycle step comprises etch step and side wall deposition step, etching gas is passed into when performing etch step, sidewall deposition gas is passed into when performing side wall deposition step, the time of implementation of described etching gas and described sidewall deposition gas is identical, described etching gas also passes into chamber in lasting confession at once in each sidewall deposition gas.
Further, the span of overlapping time that passes into of described etching gas and sidewall deposition gas is for being less than 200ms.
Further, described etching gas is C
4f
8, sidewall deposition gas is SF
6.
ICP plasma process chamber provided by the invention and gas injection apparatus thereof, the stability of holding chamber chamber internal pressure in the process that silicon etching method for forming through hole alternately can repeat in etching and side wall deposition, can stable cavity room pressure, and ensure etched features quality.
Accompanying drawing explanation
Fig. 1 is the structural representation of the inductance coupling high type plasma process chamber of prior art;
Fig. 2 is that the gas of the deep via etching of prior art passes into sequential chart and chamber pressure wave pattern;
Fig. 3 is the structural representation of the inductance coupling high type plasma process chamber according to the present invention's specific embodiment;
Fig. 4 is the structural representation of the gas injection apparatus of inductance coupling high type plasma process chamber according to the present invention's specific embodiment;
Fig. 5 is that the gas etched according to the deep via of the present invention's specific embodiment passes into sequential chart and chamber pressure wave pattern.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described.
It is to be noted; " semiconductor arts piece ", " wafer " and " substrate " these words often will be exchanged use in explanation subsequently; in the present invention; they all refer to that, in the processed process conditions of process chamber, process conditions is not limited to wafer, substrate, substrate, large-area flat-plate substrate etc.For convenience of description, mainly exemplary illustration will be made for " substrate " herein in execution mode illustrates and illustrates.
As shown in Figure 1, inductance coupling plasma processing device 100 comprises metal sidewall 102 and insulation top board 104, forms an airtight vacuum sealing housing, and is vacuumized by vacuum pumping pump (not shown).Described insulation top board 104 only exemplarily, also can adopt other top board pattern, and such as dome shape, with the metal top plate etc. of insulating material window.Pedestal 106 comprises an electrostatic chuck (not shown), described electrostatic chuck is placed pending substrate W.Bias power is applied on described electrostatic chuck, to produce the chucking power to substrate W.The radio-frequency power of radio-frequency power supply 108 be applied to be positioned at insulation top board 104 on radio-frequency power emitter on.Wherein, in the present embodiment, described radio-frequency (RF) transmitter comprises radio-frequency coil 110.Process gas is supplied in reaction chamber from source of the gas through pipeline, forms plasma process region P, thus process substrate W to light and to maintain plasma above substrate W.
Particularly, reacting gas enters chamber from gas inject mouth 112.During the usual Bosch technique of deep reaction ion etching, etch step and side wall deposition step is needed alternately repeatedly to perform.Silicon via etch mechanism conventionally, the time of implementation of etch step and side wall deposition step is identical, start to perform side wall deposition step after etch step is finished, in like manner side wall deposition step performs etch step after being finished at once, and repetitive cycling ground like this performs several times.Wherein, need in etch step to pass into etching gas, and side wall deposition step needs to pass into sidewall deposition gas.Etching gas and sidewall deposition gas all enter chamber by unified gas inject mouth 112, in other words, be equivalent to gas inject mouth 112 and switchably pass into etching gas and sidewall deposition gas in the unit interval.
Fig. 2 is that the gas of the deep via etching of prior art passes into sequential chart and chamber pressure wave pattern.As shown in Figure 2, the object of deep hole etching is reached in Bosch technique by the quick switching of etch step and side wall deposition step two step.Exemplarily, etching gas is C
4f
8, sidewall deposition gas is SF
6.As shown in Figure 2, these two kinds of gases switch to obtain good technological effect usually within the time of 1s or shorter.Because etching gas is different with the molecular weight of sidewall deposition gas, the equal reason of the dissociation degree under plasmoid, can cause the variation of chamber pressure P1 in the moment that etching gas and sidewall deposition gas enter chamber.The change of this pressure can cause the instability of process results, causes etched shape even not, the problems such as sidewall is smooth not.Particularly because etching terminal (endpoint) detection utilizes the reflection of light in etching structure to record, because cavity indoor pressure is different, will has an impact to light signal, thus cause the problem of endpoint detecting difficulty.
Fig. 3 is the structural representation of the inductance coupling high type plasma process chamber according to the present invention's specific embodiment.Fig. 1 is the structural representation of the inductance coupling high type plasma process chamber of prior art, inductance coupling plasma processing device (ICP wherein, Inductive CoupledPlasma Chamber) 200 be only exemplary, described 200 in fact also can comprise less or extra parts, and the arrangement of parts also can be different from shown in Fig. 3.
As shown in Figure 3, inductance coupling plasma processing device 200 comprises metal sidewall 202 and insulation top board 204, forms an airtight vacuum sealing housing, and is vacuumized by vacuum pumping pump (not shown).Described insulation top board 204 only exemplarily, also can adopt other top board pattern, and such as dome shape, with the metal top plate etc. of insulating material window.Pedestal 206 comprises an electrostatic chuck (not shown), described electrostatic chuck is placed pending substrate W.Bias power is applied on described electrostatic chuck, to produce the chucking power to substrate W.The radio-frequency power of radio-frequency power supply 208 be applied to be positioned at insulation top board 204 on radio-frequency power emitter on.Wherein, in the present embodiment, described radio-frequency (RF) transmitter comprises radio-frequency coil 210.Process gas is supplied in reaction chamber from source of the gas through pipeline, forms plasma process region P, thus process substrate W to light and to maintain plasma above substrate W.
Wherein, Fig. 4 is the structural representation of the gas injection apparatus of inductance coupling high type plasma process chamber according to the present invention's specific embodiment.Shown in composition graphs 3 and Fig. 4, described gas injection apparatus 212 is hollow and annular, it is arranged at the peripheral top of described inductance coupling high type plasma processing chamber chamber room 200 sidewall 202, and described gas injection apparatus 212 comprises upper and lower double-layer structure, is respectively the first structure 212a and the second structure 212b.In the first structure 212a, be provided with the first gas inject mouth a being through to chamber interior, in the second structure 212b, be provided with the second gas inject mouth b being through to chamber interior, to supply processing procedure reacting gas to chamber interior.
Further, described first gas inject mouth and the second gas inject mouth supply the first reacting gas and the second reacting gas respectively to chamber interior.Typically, described first reacting gas is etching gas, and described second reacting gas is sidewall deposition gas.Particularly, described etching gas is C
4f
8, sidewall deposition gas is SF
6.According to technological invention mechanism of the present invention, when utilizing Bosch technique to perform silicon via etch, pass into chamber interior to described etching gas and sidewall deposition gas alternate cycles, wherein, the time of implementation of described etching gas and described sidewall deposition gas is identical.Further, described etching gas also passes into chamber in lasting confession at once in each sidewall deposition gas.Exemplarily, utilize the first gas inject mouth a on the first structure 212a of gas injection apparatus 212 to pass into etching gas, utilize the second gas inject mouth b on the second structure 212b of gas injection apparatus 212 to pass into sidewall deposition gas.Because the present invention passes into etching gas and sidewall deposition gas respectively by the first gas inject mouth a on the first structure 212a of setting separately and the second gas inject mouth b on the second structure 212b, etching gas can be realized and also at once pass into chamber in lasting confession in each sidewall deposition gas.
Second aspect present invention provides a kind of described inductance coupling high type plasma treatment chamber 200, described inductance coupling high type plasma process chamber 200 comprises a column chamber, wherein, described inductance coupling high type plasma treatment chamber 200 comprises the gas injection apparatus 212 described in first aspect present invention, described gas injection apparatus 212 is ring-types, and it is arranged at the peripheral top of described inductance coupling high type plasma processing chamber chamber room 200 sidewall 202.
Third aspect present invention provides a kind of silicon etching method for forming through hole performed in inductance coupling high type plasma process chamber 200, and described inductance coupling high type plasma treatment chamber 200 comprises previously described gas injection apparatus 212.Wherein.Fig. 5 is that the gas etched according to the deep via of the present invention's specific embodiment passes into sequential chart and chamber pressure wave pattern, and as shown in the figure, described etching gas is C
4f
8, sidewall deposition gas is SF
6.Described silicon etching method for forming through hole comprises the process cycle step repeatedly repeated, described process cycle step comprises etch step and side wall deposition step, etching gas is passed into when performing etch step, sidewall deposition gas is passed into when performing side wall deposition step, the time of implementation of described etching gas and described sidewall deposition gas is identical, and described etching gas also passes into chamber in lasting confession at once in each sidewall deposition gas.As shown in Figure 5, the invention enables the floating of chamber pressure P2 to remain in preset range, chamber pressure P2 reaches relatively stable.
Further, the span of the overlapping time that described etching gas and sidewall deposition gas pass into for being less than 200ms, such as 150ms, 125ms, 99ms, 50ms, 20ms, 10ms, 8ms, 2ms etc.
The present invention by by etching and the inlet channel of side wall deposition discrete, the air inlet sequential of two kinds of gases can be controlled by independently control unit, both can realize control when Synchronization Control also can realize poor accurately.When difference under control mode, the time entering cavity by accurately controlling two kinds of gases compensates the pressure of gas in cavity, thus obtain stable chamber pressure, more easily obtain under this condition and stablize excellent process results, be also conducive to the endpoint detecting of technical process.
Although content of the present invention has done detailed introduction by above preferred embodiment, will be appreciated that above-mentioned description should not be considered to limitation of the present invention.After those skilled in the art have read foregoing, for multiple amendment of the present invention and substitute will be all apparent.Therefore, protection scope of the present invention should be limited to the appended claims.In addition, any Reference numeral in claim should be considered as the claim involved by restriction; " comprise " word and do not get rid of device unlisted in other claim or specification or step; The word such as " first ", " second " is only used for representing title, and does not represent any specific order.
Claims (10)
1. the gas injection apparatus for described inductance coupling high type plasma treatment chamber, wherein, described inductance coupling high type plasma process chamber comprises a column chamber, it is characterized in that, described gas injection apparatus is ring-type, it is arranged at above the side wall perimeter of described inductance coupling high type plasma processing chamber chamber room, described gas injection apparatus comprises upper and lower double-layer structure, the the first gas inject mouth and the second gas inject mouth that are through to chamber interior is respectively arranged with, to supply processing procedure reacting gas to chamber interior among described upper and lower double-layer structure.
2. gas injection apparatus according to claim 1, is characterized in that: described first gas inject mouth and the second gas inject mouth supply the first reacting gas and the second reacting gas respectively to chamber interior.
3. gas injection apparatus according to claim 2, is characterized in that: described first reacting gas is etching gas, and described second reacting gas is sidewall deposition gas.
4. gas injection apparatus according to claim 3, is characterized in that: pass into chamber interior to described etching gas and sidewall deposition gas alternate cycles, wherein, the time of implementation of described etching gas and described sidewall deposition gas is identical.
5. gas injection apparatus according to claim 4, is characterized in that: described etching gas also passes into chamber in lasting confession at once in each sidewall deposition gas.
6. gas injection apparatus according to claim 5, is characterized in that: described etching gas is C
4f
8, sidewall deposition gas is SF
6.
7. a described inductance coupling high type plasma treatment chamber, described inductance coupling high type plasma process chamber comprises a column chamber, it is characterized in that: described inductance coupling high type plasma treatment chamber comprises the gas injection apparatus described in any one of claim 1 to 6, described gas injection apparatus is ring-type, and it is arranged at above the side wall perimeter of described inductance coupling high type plasma processing chamber chamber room.
8. the silicon etching method for forming through hole performed in inductance coupling high type plasma process chamber, described inductance coupling high type plasma treatment chamber comprises the gas injection apparatus described in any one of claim 1 to 6, it is characterized in that: described silicon etching method for forming through hole comprises the process cycle step repeatedly repeated, described process cycle step comprises etch step and side wall deposition step, etching gas is passed into when performing etch step, sidewall deposition gas is passed into when performing side wall deposition step, the time of implementation of described etching gas and described sidewall deposition gas is identical, described etching gas also passes into chamber in lasting confession at once in each sidewall deposition gas.
9. silicon etching method for forming through hole according to claim 8, is characterized in that: the span of the overlapping time that described etching gas and sidewall deposition gas pass into is for being less than 200ms.
10. silicon etching method for forming through hole according to claim 8, is characterized in that: described etching gas is C
4f
8, sidewall deposition gas is SF
6.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310751344.1A CN104752191A (en) | 2013-12-31 | 2013-12-31 | Inductive Coupled Plasma (ICP) processing chamber, gas injection device thereof and Through-Silicon-Via (TSV) etching method |
| TW103142804A TWI571921B (en) | 2013-12-31 | 2014-12-09 | ICP plasma processing chamber and its gas injection device, silicon hole etching method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310751344.1A CN104752191A (en) | 2013-12-31 | 2013-12-31 | Inductive Coupled Plasma (ICP) processing chamber, gas injection device thereof and Through-Silicon-Via (TSV) etching method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN104752191A true CN104752191A (en) | 2015-07-01 |
Family
ID=53591704
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310751344.1A Pending CN104752191A (en) | 2013-12-31 | 2013-12-31 | Inductive Coupled Plasma (ICP) processing chamber, gas injection device thereof and Through-Silicon-Via (TSV) etching method |
Country Status (2)
| Country | Link |
|---|---|
| CN (1) | CN104752191A (en) |
| TW (1) | TWI571921B (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107195525A (en) * | 2017-05-16 | 2017-09-22 | 中国电子科技集团公司第四十八研究所 | A kind of inductively coupled plasma etching equipment |
| CN112086337A (en) * | 2019-06-14 | 2020-12-15 | 北京北方华创微电子装备有限公司 | Process chamber |
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| JP2009147301A (en) * | 2007-11-21 | 2009-07-02 | Tokyo Electron Ltd | Inductive coupling plasma processing apparatus and method |
| CN101988196A (en) * | 2009-08-07 | 2011-03-23 | 中微半导体设备(上海)有限公司 | Deep reactive ion etching method and gas-flow control device thereof |
| CN202616186U (en) * | 2012-03-23 | 2012-12-19 | 中微半导体设备(上海)有限公司 | Inductive coupling plasma etching chamber |
| CN103117203A (en) * | 2013-03-08 | 2013-05-22 | 中微半导体设备(上海)有限公司 | Device and method for plasma etching process treatment |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100855002B1 (en) * | 2007-05-23 | 2008-08-28 | 삼성전자주식회사 | Plasma based ion implantation system |
| TWI416624B (en) * | 2009-12-11 | 2013-11-21 | Advanced Micro Fab Equip Inc | An etching method for deep - through - hole |
-
2013
- 2013-12-31 CN CN201310751344.1A patent/CN104752191A/en active Pending
-
2014
- 2014-12-09 TW TW103142804A patent/TWI571921B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009147301A (en) * | 2007-11-21 | 2009-07-02 | Tokyo Electron Ltd | Inductive coupling plasma processing apparatus and method |
| CN101988196A (en) * | 2009-08-07 | 2011-03-23 | 中微半导体设备(上海)有限公司 | Deep reactive ion etching method and gas-flow control device thereof |
| CN202616186U (en) * | 2012-03-23 | 2012-12-19 | 中微半导体设备(上海)有限公司 | Inductive coupling plasma etching chamber |
| CN103117203A (en) * | 2013-03-08 | 2013-05-22 | 中微半导体设备(上海)有限公司 | Device and method for plasma etching process treatment |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107195525A (en) * | 2017-05-16 | 2017-09-22 | 中国电子科技集团公司第四十八研究所 | A kind of inductively coupled plasma etching equipment |
| CN112086337A (en) * | 2019-06-14 | 2020-12-15 | 北京北方华创微电子装备有限公司 | Process chamber |
| CN112086337B (en) * | 2019-06-14 | 2024-03-26 | 北京北方华创微电子装备有限公司 | Process chamber |
Also Published As
| Publication number | Publication date |
|---|---|
| TWI571921B (en) | 2017-02-21 |
| TW201530633A (en) | 2015-08-01 |
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| CB02 | Change of applicant information | ||
| CB02 | Change of applicant information |
Address after: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant after: Medium and Micro Semiconductor Equipment (Shanghai) Co., Ltd. Address before: 201201 No. 188 Taihua Road, Jinqiao Export Processing Zone, Pudong New Area, Shanghai Applicant before: Advanced Micro-Fabrication Equipment (Shanghai) Inc. |
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| RJ01 | Rejection of invention patent application after publication | ||
| RJ01 | Rejection of invention patent application after publication |
Application publication date: 20150701 |