CN104112639B - Plasma reaction chamber and method for achieving fast switching of the reaction gas - Google Patents

Plasma reaction chamber and method for achieving fast switching of the reaction gas Download PDF

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CN104112639B
CN104112639B CN201310140971.1A CN201310140971A CN104112639B CN 104112639 B CN104112639 B CN 104112639B CN 201310140971 A CN201310140971 A CN 201310140971A CN 104112639 B CN104112639 B CN 104112639B
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gas
reaction chamber
reaction
etching
deposition
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CN104112639A (en
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左涛涛
倪图强
周旭升
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中微半导体设备(上海)有限公司
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Abstract

本发明公开了一种实现反应气体快速切换的等离子体反应室及其方法,通过采用本发明的技术方案,使得整个工艺过程流入反应腔的气体总流量相同,有利于控制反应腔的压力稳定,同时,两组气体从反应腔的上方和下方同时注入反应腔内,在保证不影响基片刻蚀反应和沉积反应的同时,变相的减小了反应腔的容积,更有利于气体快速充满反应腔,提高了刻蚀步骤和沉积步骤的切换速率,进而提高了基片的刻蚀速率。 The present invention discloses the same plasma reaction chamber and a method for achieving fast switching of the reaction gas, by employing the techniques of the present invention, so that the entire process into the reaction chamber of the total gas flow, facilitate control of pressure in the reaction chamber is stabilized, Meanwhile, two above and below the gas from the reaction chamber into the reaction chamber at the same time, in the substrate etching without changing the reaction and deposition reaction at the same time, reduces the volume of the disguise of the reaction chamber, the reaction is more conducive to rapid gas filled chamber improves the switching rate of the etching step and the deposition step, thereby increasing the etching rate of the substrate. 同时,由于反应腔内的气压高于抽气泵处的气压,气体流量控制器需要面对的压力差较小,有利于准确、稳定的控制反应气体流速,从而提高制程的稳定性。 Meanwhile, since the reaction chamber is higher than the pressure at the pump suction pressure, gas flow controller to face the pressure difference is small, is conducive to accurate and stable control of the reaction gas flow rate, thereby improving the process stability.

Description

一种实现反应气体快速切换的等离子体反应室及其方法 Plasma reaction chamber and method for achieving fast switching of the reaction gas

技术领域 FIELD

[0001]本发明涉及半导体基片处理技术领域,尤其涉及一种在深加工等离子刻蚀技术中快速实现反应气体切换的技术领域。 [0001] The present invention relates to a semiconductor substrate processing techniques, and in particular relates to achieve a fast handover BACKGROUND reaction gas in the deep processing technique of plasma etching.

背景技术 Background technique

[0002] 半导体制造技术领域中,在MEMS(Micro-Electro_Mechanical Systems,微机电系统)和3D封装技术等领域,通常需要对硅等材料进行深通孔刻蚀。 [0002] The technical field of semiconductor manufacturing, in the field of MEMS (Micro-Electro_Mechanical Systems, MEMS) technology, and 3D packaging, materials such as silicon is often necessary for etching deep vias. 例如,在体硅刻蚀技术中,深娃通孔(Through-Si Iicon-Via,TSV)的深度达到几百微米、其深宽比大于10,通常采用深反应离子刻蚀方法来刻蚀体硅形成。 For example, in the bulk silicon etching techniques, the depth of the deep through-hole Wa (Through-Si Iicon-Via, TSV) of up to several hundred microns and an aspect ratio greater than 10, usually deep reactive ion etching method to etch the body silicon.

[0003] 现有技术中,TSV的深反应离子刻蚀通常采用美国专利US5501893提出的Bosch工艺进行。 [0003] In the prior art, TSV deep reactive ion etching using the Bosch process is generally set forth in U.S. Patent US5501893 performed. 具体深反应离子刻蚀方法包括以下步骤:(I)刻蚀步骤,通常用Ar、02、SF6的混合气体进行等离子体刻蚀;(2)聚合物沉积步骤,通常用Ar和C4F8的混合气体在孔洞内侧面形成氟碳聚合物层,其厚度一般在纳米级,有时也称作该聚合物层为钝化层,为使孔洞底部基本不形成氟碳聚合物层,该步骤中一般采用相对较低较的RF(Rad1 Frequency,射频)频率; DETAILED deep reactive ion etching method comprising the steps of: (I) an etching step is generally carried out by Ar plasma etching, 02, a mixed gas of SF6; (2) a polymer deposition step, usually a mixed gas of Ar and C4F8 fluorocarbon polymer layer is formed in the inner surface of the holes, the thickness thereof is generally at the nanoscale, sometimes referred to as the polymer layer is a passivation layer, such that substantially no holes in the bottom layer of fluorocarbon polymer is formed, this step is generally employed relative lower than the RF (Rad1 frequency, RF) frequency;

[3]刻蚀步骤和聚合物沉积步骤交替进行,直到通孔刻蚀完成,在刻蚀步骤中,由于孔洞的内表面、尤其是孔洞内侧面沉积聚合物,垂直等离子刻蚀时,入射的离子不会对其内侧面聚合物造成破坏侧壁得以被保护,而垂直方向入射的离子会将孔洞底部的聚合物破坏使刻蚀反应得以向下继续,从而保证了整个孔洞刻蚀过程的各向异性。 [3] The polymer deposition step and the etching step are alternately performed until the via etch is completed, the etching step, since the inner surface of the pores, especially when the deposited polymer side holes, vertical plasma etching, the incident ions do not cause damage to its inner side surface of the sidewall to be protected polymer and the polymer in the vertical direction of the ion incidence will damage the bottom of the hole so that the etching reaction to continue downward to ensure that the whole of each of the holes in the etching process to the opposite sex.

[0004]图1所示为现有技术的等离子体反应室和气体供应系统的示意图。 [0004] FIG. 1 is a schematic view of the prior art plasma reactor chamber and a gas supply system. 如图1所示,该等离子体反应室用于图1所示深反应离子刻蚀。 1, the plasma reaction chamber for a deep reactive ion etching as shown in FIG. 100为等离子体刻蚀室,其中形成等离子体,目标刻蚀的晶圆置于反应腔100中。 100 is a plasma etch chamber, wherein the plasma is formed, etching the target wafer 100 is placed in the reaction chamber. 气体供应系统150包括至少两个气体流量控制器MFC160和170,160为刻蚀气体流量控制器,170为沉积气体流量控制器。 The gas supply system 150 includes at least two gas flow controllers 170, 160 and MFC160 as an etching gas flow controller, flow controller 170 is a deposition gas. 每个气体流量控制器分别连接至少两个控制阀门,在刻蚀步骤中,控制阀门161打开,控制阀门162闭合,刻蚀气体通过进气管道120进入反应腔100内;此时,控制阀门171闭合,控制阀门172打开,沉积气体通过排气管道122被抽气栗140排出;在沉积步骤中,控制阀门161闭合,控制阀门162打开,刻蚀气体通过排气管道122被抽气栗140排出,此时,控制阀门171打开,控制阀门172闭合,沉积气体通过进气管道120进入反应腔100。 Each gas flow controller connected to the at least two control valves, respectively, in the etching step, the control valve 161 is opened, the control valve 162 is closed, the etching gas through the intake pipe into the reaction chamber 100 120; At this time, the control valves 171 closed, the control valve 172 is opened, the deposition gas is exhausted through the exhaust duct 140 122 Li evacuation; during the deposition step, the control valve 161 is closed, the control valve 162 is opened, etching gas 140 is discharged through the exhaust duct 122 evacuated Li In this case, the control valve 171 is opened, the control valve 172 is closed, the deposition gas through the inlet conduit into the reaction chamber 100 120. 为了维持气体供应系统的流量稳定,刻蚀气体流量控制器160和沉积气体流量控制器170处于常开状态,通过控制其连接的控制阀门交替开关闭合,实现刻蚀步骤和沉积步骤的交替变化。 To maintain a stable flow of the gas supply system, an etching gas flow controller 160 and the deposition gas flow controller 170 is in a normally open state, the control valve is connected to alternately switch is closed, to achieve etching step and the deposition step are alternately changed.

[0005]在进行刻蚀步骤和沉积步骤切换时,要将反应腔100内的气体排出,同时注入另一步骤所需的反应气体,由于反应腔100的容积较大,导致这一切换所需时间较长,降低了深反应刻蚀速率,同时,由于刻蚀气体流量控制器160和沉积气体流量控制器170处于常开状态,在某一步骤进行时,另一步骤所需气体被排出,造成反应气体的浪费。 [0005] During the etching step and the deposition step of switching, the gas inside the reaction chamber 100. To discharge while injecting a reaction gas required a further step, since the volume of the reaction chamber 100 is large, this results in the desired switching longer, deep reactive etching rate is reduced, while the gas flow controller since an etching and deposition gas flow controller 160 is in a normally open state 170, when a certain step, the desired gas is discharged further step, resulting in a waste of the reaction gas.

发明内容 SUMMARY

[0006]为了解决上述问题,本发明提供了一种实现反应气体快速切换的等离子体反应室,包括一反应腔,所述反应腔内设置一限制环,所述限制环将所述反应腔间隔为反应腔上方空间和反应腔下方空间,所述反应腔上方空间设置开口连接气体供应系统,所述气体供应系统包括至少两个流量控制器,用于分别控制第一气体和第二气体交替进入所述反应腔上方空间内,所述反应腔下方空间设置一开口,连接所述气体供应系统,所述流量控制器分别控制所述第一气体和第二气体交替进入所述反应腔内。 [0006] In order to solve the above problems, the present invention provides a plasma reaction chamber a reaction gas for realizing fast handover, comprising a reaction chamber, said reaction chamber provided with a confinement ring, said confinement ring spacing the reaction chamber the reaction space is a space above the lower chamber and the reaction chamber, the reaction chamber space above an opening connecting the gas supply system, the gas supply system comprises at least two flow controllers for respectively controlling the first and second gases alternately into the the space above the reaction chamber, said reaction chamber provided with a space below an opening connecting the gas supply system, a flow controller to control respectively said first and second gases alternately into the reaction chamber.

[0007]优选的,所述第一气体为刻蚀气体,所述第二气体为沉积气体,或者所述第一气体为沉积气体,所述第二气体为刻蚀气体。 [0007] Preferably, the first gas as an etching gas, the deposition gas is the second gas, the first gas or the deposition gas, the second gas is an etching gas.

[0008] 进一步的,所述刻蚀气体包括Ar、02、SF6;所述沉积气体包括Ar和C4F8。 [0008] Further, the etching gas includes Ar, 02, SF6; the deposition gas comprises Ar and C4F8.

[0009]优选的,所述限制环包括若干个槽状通道,所述槽状通道的大小被设置成当所述带电粒子通过所述通道时可以使带电粒子被中和,以限制等离子体的通过。 [0009] Preferably, the restricting ring comprises a plurality of groove-like channels, the size of the groove-like channels are arranged such that when the charged particles may be charged particles through the passage and to limit the plasma by.

[0010]优选的,所述限制环包括若干个大致为圆孔状的气体通道,所述气体通道的内径小于等于10mm。 [0010] Preferably, the restricting ring comprises a plurality of substantially circular-shaped gas passage, the inner diameter of the gas passage is smaller than or equal 10mm.

[0011]进一步的,所述气体供应系统包括刻蚀气体流量控制器和沉积气体流量控制器,所述刻蚀气体流量控制器和沉积气体流量控制器前端分别连接刻蚀气体源和沉积气体源,后端分别连接两个控制阀门。 [0011] Further, the etching gas supply system comprises a gas flow controller and the deposition gas flow controller, the etching gas and deposition gas flow controller flow controller connected to the front end of the deposition gas and the etching gas supply source, respectively , two control valves are connected to the rear end.

[0012]进一步的,所述反应腔包括一大致呈圆筒状的侧壁和位于侧壁上方的顶板,所述顶板下方设置一气体喷淋头,用以将通过所述反应腔上方开口处注入的反应气体均匀分散到反应腔内。 [0012] Further, the reaction chamber comprises a generally cylindrical sidewall and top plate located above the side walls, the top plate is provided below a gas shower head for the reaction chamber through the top opening the reaction gas is uniformly dispersed is injected into the reaction chamber.

[0013]进一步的,所述反应腔包括一大致呈圆筒状的侧壁和位于侧壁上方的顶板,所述侧壁靠近顶板的一端均匀设置若干个气体注入口,用于将气体供应系统中的反应气体均匀注入所述反应腔内。 [0013] Further, the reaction chamber comprises a generally cylindrical sidewall and top plate located above the sidewall, the sidewall near one end of the top plate is provided a plurality of uniform gas injection port for the gas supply system said reaction chamber in a reaction gas is uniformly injected.

[0014]进一步的,本发明还公开了一种快速切换反应气体的方法,包括下列步骤: [0014] Further, the present invention also discloses a method of rapid handover of the reaction gas, comprising the steps of:

[0015]刻蚀步骤,控制刻蚀气体流量控制器后端的控制阀门,提供刻蚀气体到反应腔上方空间,同时控制沉积气体流量控制器后端的控制阀门,提供沉积气体到反应腔下方空间; [0015] etching step, an etching gas flow rate control valve of the rear end of the controller, providing the etching gas into the reaction space above the chamber, while the control valve of the rear end of the deposition gas flow controller, providing a deposition gas into the space beneath the reaction chamber;

[0016]沉积步骤:控制沉积气体流量控制器后端的控制阀门,提供沉积气体到反应腔上方空间;同时控制刻蚀气体流量控制器后端的控制阀门,提供刻蚀气体到反应腔下方空间; [0016] The deposition step: control of the control valve of the rear end of the deposition gas flow controller, providing a deposition gas into the space above the reaction chamber; control valves while the rear end of the etching gas flow controllers, to provide an etching gas into the space beneath the reaction chamber;

[0017]上述刻蚀步骤和沉积步骤交替进行。 [0017] The etching step and the deposition step are alternately performed.

[0018]进一步的,在刻蚀步骤和沉积步骤中,所述刻蚀气体流量控制器和所述沉积气体流量控制器处于常开状态。 [0018] Further, in the etching step and the deposition step, said etching gas flow controller and the deposition gas flow controller in a normally open state.

[0019]本发明的优点在于:通过采用本发明的技术方案,使得整个工艺过程流入反应腔的气体总流量相同,有利于控制反应腔的压力稳定,同时,两组气体从反应腔的上方和下方同时注入反应腔内,在保证不影响基片刻蚀反应和沉积反应的同时,变相的减小了反应腔的容积,更有利于气体快速充满反应腔,提高了刻蚀步骤和沉积步骤的切换速率,进而提高了基片的刻蚀速率。 [0019] The advantage of the present invention is that: by adopting the technical solution of the present invention, such that the total gas flow into the reaction chamber during the whole process of the same, facilitate control of the reaction chamber pressure is stable, while two gas from above the reaction chamber and switching into the reaction chamber while the bottom in the substrate etching without changing the reaction and deposition reaction at the same time, reduces the volume of the disguise the reaction chamber, the more favorable the reaction chamber filled with a gas quickly, improving the etching step and the deposition step rate, thereby increasing the etching rate of the substrate. 同时,由于反应腔内的气压高于抽气栗处的气压,气体流量控制器需要面对的压力差较小,有利于准确、稳定的控制反应气体流速。 Meanwhile, since the reaction chamber pressure is higher than exhaust gas pressure at the Li, the gas flow controller to face the pressure difference is small, it is conducive to accurate and stable control of the reaction gas flow rate. 从而提高制程的稳定性。 Thereby improving the process stability.

附图说明 BRIEF DESCRIPTION

[0020]图1示出现有技术所述等离子体反应室与气体供应系统间连接的结构示意图; [0020] FIG 1 illustrates a schematic view of a prior art structure between the plasma reaction chamber connected to a gas supply system;

[0021]图2示出本发明所述等离子体反应室与气体供应系统间连接的结构示意图; [0021] FIG. 2 shows a schematic view of the structure of the present invention, the reaction between the chamber and the gas supply system coupled to said plasma;

[0022]图3示出本发明另一实施例所述等离子体反应室与气体供应系统间连接的结构示意图。 [0022] Figure 3 shows a schematic structure of a reaction chamber between a gas supply system connected with a further embodiment of the present invention the plasma.

具体实施方式 Detailed ways

[0023]为使本发明的目的、技术方案和优点更加清楚,下面结合附图对本发明作进一步的详细描述。 [0023] To make the objectives, technical solutions, and advantages of the invention more apparent, the accompanying drawings The present invention will be further described in detail with.

[0024]图2示出本发明所述等离子体反应室与气体供应系统间连接的结构示意图,等离子体反应室包括一反应腔200,反应腔200包括大致呈圆筒状的侧壁212、位于侧壁212上方的顶板210和位于侧壁212下方的底板213。 [0024] Figure 2 shows a schematic structure of a reaction chamber between the plasma and the gas supply system connected to the present invention, the plasma reaction chamber comprises a reaction chamber 200, reaction chamber 200 includes a substantially cylindrical sidewall 212, is located the top plate 210 and side wall 212 positioned above the lower side wall 212 of the bottom plate 213. 反应腔内还包括基座235用于支撑基片236,在基片236的下方环绕设置一限制环230,将反应腔200间隔为反应腔上方空间201和反应腔下方空间202。 The reaction chamber further includes a base 235 for supporting a substrate 236, a limiting ring 230 circumferentially disposed below the substrate 236, the spacer 200 to the reaction chamber space above the reaction chamber 201 below the chamber 202 and the reaction space. 顶板210上设置一进气口221,一进气管道220连接气体供应系统250将反应步骤所需反应气体注入反应腔上方空间201内。 A top plate 210 is provided on the intake port 221, an intake duct 220 is connected to a gas supply system 250 to the desired reaction step of the reaction gas into the space above the reaction chamber 201. 侧壁212下方或底板213上设置一排气口223,一排气管道222连接气体供应系统250,用以将反应步骤中不需要的气体注入反应腔下方空间202内,底板213与抽气栗240相连,用以排出反应腔内的气体。 An exhaust port 212 is provided on the lower sidewall plate 213 or 223, the conduit 222 is connected to an exhaust gas supply system 250 for the reaction step is unnecessary gas is injected into the space below the reaction chamber 202, the bottom plate 213 and suction Li 240 is connected to the gas reaction chamber is discharged. 本实施例中限制环230包括若干个大致为圆孔状的气体通道,所述气体通道的内径小于等于10mm,用以限制反应腔上方空间201内的等离子体进入反应腔下方空间202。 Limiting embodiment of the present embodiment comprises a plurality of ring 230 is substantially circular shaped gas passage, the inner diameter of the gas passage is less 10mm, to limit the space above the plasma in the reaction chamber 201 to enter the space below the reaction chamber 202.

[0025]图2所示的等离子体刻蚀室适用于深反应等离子体刻蚀技术,根据图1所示,该技术通过刻蚀步骤和沉积步骤的交替进行来完成,(I)刻蚀步骤,通常用Ar、02、SF6的混合气体(本发明简称刻蚀气体)进行等离子体刻蚀;(2)沉积步骤,通常用Ar和C4F8的混合气体(本发明简称沉积气体)在孔洞内侧面形成氟碳聚合物层,其厚度一般在纳米级,有时也称作该聚合物层为钝化层,为使孔洞底部基本不形成氟碳聚合物层,该步骤中一般采用相对较低较的RF(Rad1 Frequency,射频)频率;(3)刻蚀步骤和沉积步骤交替进行,刻蚀步骤结束时需要将刻蚀气体排出反应腔内同时注入沉积气体,开始沉积步骤;沉积步骤结束时需要将沉积气体排出反应腔同时注入刻蚀气体,依次循环,直到通孔刻蚀完成。 Plasma etch chamber shown in [0025] FIG 2 is suitable for a deep reactive plasma etching techniques, according to FIG. 1, the technology by etching step and the deposition step are alternately performed to complete, (the I) the step of etching usually with Ar, 02, a mixed gas of SF6 (referred to as the present invention, etching gas) plasma etching; (2) deposition step, typically with a mixed gas of Ar and C4F8 (the present invention is referred to as a gas deposition) side in the holes forming a fluorocarbon polymer layer thickness is generally at the nanoscale, sometimes referred to as the polymer layer is a passivation layer, such that substantially no holes in the bottom layer of fluorocarbon polymer is formed, the step is more commonly used in a relatively low RF (Rad1 frequency, RF) frequency; (3) an etching step and the deposition step are alternately performed, it is necessary to exhaust the etching gas injected into the reaction chamber while the deposition gas, an etching start step at the end of the deposition step; end of the deposition step is necessary to deposition gas discharged from the reaction chamber while injecting an etching gas, in cycles, until complete via etching.

[0026]气体供应系统250包括刻蚀气体流量控制器260和沉积气体流量控制器270,刻蚀气体流量控制器260和沉积气体流量控制器270前端分别连接刻蚀气体源和沉积气体源(图中未示出),由于MFC的切换速率较慢,不能实现刻蚀步骤和沉积步骤的快速交替,同时为了保证反应气体的流速稳定,通常将刻蚀气体流量控制器260和沉积气体流量控制器270设置为常开状态。 [0026] The etching gas supply system 250 includes a gas flow controller 260 and flow controller 270 of the deposition gas, etching gas and deposition gas flow controller 260 flow controller 270 are connected to the front end of the etching gas source and the deposition gas source (FIG. not shown), due to the slow rate of MFC switching can not be realized fast etching step and the step of alternately deposited, and in order to ensure stable flow rate of the reaction gas, an etching gas flow controller typically 260 and deposition gas flow controller 270 set to normally open state. 刻蚀气体流量控制器260后端连接控制阀门261和262,控制阀门261和262交替打开和闭合,控制刻蚀气体在刻蚀步骤中注入反应腔上方空间201,在沉积步骤中注入反应腔下方空间202 ;沉积气体流量控制器270后端连接控制阀门271和272,控制阀门271和272交替打开和闭合,控制沉积气体在沉积步骤中注入反应腔上方空间201,在刻蚀步骤中注入反应腔下方空间202。 Etching a rear end connected to the gas flow controller 260 controls the valves 261 and 262, control valves 261 and 262 alternately open and closed, control of etching gas injection space 201 in the reaction chamber above etching step, is injected below the reaction chamber during the deposition step space 202; the rear end of the deposition gas flow controller 270 controls the valves 271 and 272 are connected, the control valves 271 and 272 alternately open and close the reaction chamber, controlling the deposition gas injection space 201 above the reaction chamber during the deposition step, etching step in the implantation space below 202.

[0027] 在刻蚀步骤开始时,控制阀门261和控制阀门272处于打开状态,控制阀门262和控制阀门271处于闭合状态,此时,刻蚀气体通过进气管道220进入反应腔上方空间201内,在反应腔内电磁场的作用下解离为等离子体或中性自由基等离子,对基片进行刻蚀,同时,沉积气体通过排气管道222进入反应腔下方空间202,使得刻蚀气体无需填充满整个反应腔即能达到刻蚀步骤所需要的压力状态,相当于变相的减小了反应腔的容积,节省了刻蚀气体。 [0027] When the etching step starts, the control valve 261 and control valve 272 is open, the control valve 262 and control valve 271 is in the closed state, this time, the etching gas through the intake duct 220 into the space above the reaction chamber 201 dissociation reaction chamber under the action of the electromagnetic field to plasma or neutral radicals plasma etching of substrates while the deposition gas 222 enters the space below the reaction chamber through the exhaust duct 202, such that the etching gas need not fill fill the entire reaction chamber that can achieve the required pressure conditions of the etching step, the volume corresponding to disguise the reaction chamber is reduced, saving the etching gas. 由于反应腔下方空间202位于基片236的下方,其空间内的沉积气体不会对刻蚀反应造成影响。 Since the space below the reaction chamber 202 is positioned below the substrate 236, the deposition gas in the space which does not affect the etching reaction.

[0028] 在沉积步骤开始时,控制阀门262和控制阀门271处于打开状态,控制阀门261和控制阀门272处于闭合状态,此时,沉积气体通过进气管道220进入反应腔上方空间201内,在刻蚀出的孔洞内侧面和底部形成氟碳聚合物层,同时,刻蚀气体通过排气管道222进入反应腔下方空间202,使得沉积气体无需填充满整个反应腔即能达到沉积步骤所需要的压力状态,相当于变相的减小了反应腔的容积,节省了沉积气体。 [0028] In the deposition step starts, the control valve 262 and control valve 271 is open, the control valve 261 and control valve 272 is in the closed state, this time, the deposition gas through inlet conduit 220 into the space above the reaction chamber 201, in fluorocarbon polymer layers are formed to etch the sides and bottom of the holes, while an etching gas through the exhaust duct 222 into the space below the reaction chamber 202, so that the deposition without the gas sufficient to fill the reaction chamber that can achieve the desired deposition step pressure state corresponding to the reduced volume of the disguise of the reaction chamber, the deposition gas saving. 由于反应腔下方空间202位于基片236的下方,其空间内的刻蚀气体不会对沉积反应造成影响。 Since the space below the reaction chamber 202 is positioned below the substrate 236, the etching gas in a space which does not affect the deposition reaction.

[0029]当刻蚀气体或者沉积气体注入反应腔下方空间202时,由于反应腔底板213连接抽气栗240,抽气栗240持续不断的工作使得反应腔下方空间202内的压力小于反应腔上方空间201的压力,从而维持反应腔内的气体不断的向下方流动,避免了反应腔下方空间202内的气体通过限制环230对基片的处理工艺造成影响。 [0029] When the etching gas or deposition gas is injected below the reaction chamber space 202, since the bottom plate 213 connected to the reaction chamber 240 evacuated Li, Li exhaust 240 such that continued work chamber below the pressure in the reaction space above the reaction chamber is less than 202 the pressure space 201, thereby maintaining the reaction chamber to keep the gas flows downward, the gas is avoided in the reaction space below the chamber 202 by limiting the impact ring 230 of the substrate processing process.

[0030]通过采用本发明的技术方案,使得整个工艺过程流入反应腔200的气体总流量相同,有利于控制反应腔200的压力稳定,同时,两组气体从反应腔的上方和下方同时注入反应腔内,在保证不影响基片刻蚀反应和沉积反应的同时,变相的减小了反应腔的容积,更有利于气体快速充满反应腔,提高了刻蚀步骤和沉积步骤的切换速率,进而提高了基片的刻蚀速率。 [0030] By adopting the technical solution of the present invention, so that the entire process into the reaction chamber 200 of the same total gas flow, facilitate control of pressure in the reaction chamber 200 is stabilized, while two gas injected into the reactor simultaneously from above and below the reaction chamber chamber, the substrate etching without changing the reaction and deposition reaction while reducing the volume of the disguise the reaction chamber, the more favorable the reaction chamber filled with a gas quickly, improving the switching speed etching step and the deposition step, thereby increasing the etching rate of the substrate.

[0031]现有技术中,在进行刻蚀步骤或沉积步骤时,需要的反应气体被注入反应腔内,不需要的气体则通过排气管道直接被抽气栗240排走,这不仅造成反应气体的浪费,同时,由于抽气栗处的气压较低,MFC需要面对较大的压力变化,容易造成气体流速的不稳定,对反应制程造成影响。 [0031] In the prior art, during the etching step or deposition step, the reaction gas needs to be injected into the reaction chamber, the unnecessary gas is discharged directly evacuated Li 240 through the exhaust duct, which not only causes the reaction the waste gas, while, due to the low air pressure at the suction chestnut, MFC need to face greater pressure changes, likely to cause gas flow rate instability affect the reaction process. 通过采用本发明的技术方案,由于反应腔202内的气压高于抽气栗处的气压,MFC需要面对的压力差较小,有利于准确、稳定的控制反应气体流速。 By using the technical solution of the present invention, since the gas pressure inside the reaction chamber 202 is higher than the pressure at the suction Li, the MFC to face the pressure difference is small, it is conducive to accurate and stable control of the reaction gas flow rate. 从而提高制程的稳定性。 Thereby improving the process stability.

[0032]图3示出本发明另一实施例所述等离子体反应室与气体供应系统间连接的结构示意图,本实施例的基本原理和连接关系同上述实施例相同,故相同的部件采用相同的标号表示,不同点在于,本实施例采用3xx系列,本实施例适用于电感耦合等离子体反应室(ICP),由于ICP的侧壁312上方设置线圈(未示出)和绝缘顶板310,无法安装气体喷淋头,故在侧壁312上靠近顶板的一端均匀设置若干个气体注入口321,气体注入口321位于基片336的上方,其与进气管道320相连,进气管道320连接气体供应系统350将反应步骤所需反应气体注入反应腔上方空间301内。 [0032] Figure 3 a further embodiment of the invention component schematic structural diagram of a reaction chamber between a gas supply system connected to the plasma, the basic principle of the present embodiment and the embodiment of a connection relationship with the previous embodiment, so the same is shown using the same reference numerals, except that, the present embodiment employs 3xx series, apply to the reaction chamber an inductively coupled plasma (ICP) the present embodiment, since the side wall 312 disposed above the ICP coil (not shown) and an insulating top plate 310, not mounting the gas shower head, it is disposed near one end of the top plate of a plurality of uniform gas injection port 321 in the side walls 312, 321 located in the substrate above the gas injection port 336, which is connected to the intake duct 320, a gas intake duct 320 is connected the system 350 supplies a desired reaction step of the reaction gas into the space above the reaction chamber 301. 在刻蚀步骤开始时,刻蚀气体流量控制器360的控制阀门361和沉积气体流量控制器370的控制阀门372处于打开状态,控制阀门362和控制阀门371处于闭合状态,此时,刻蚀气体通过进气管道320进入反应腔上方空间301内,在反应腔内电磁场的作用下解离为等离子体或中性自由基等离子,对基片进行刻蚀,同时,侧壁312下方或底板313上设置一排气口323,一排气管道322连接气体供应系统350,沉积气体进入反应腔下方空间302,使得刻蚀气体无需填充满整个反应腔即能达到刻蚀步骤所需要的压力状态,相当于变相的减小了反应腔的容积,节省了刻蚀气体。 At the beginning of the etching step, the etching gas flow controller 361 and valve 360 ​​controls the deposition gas flow controller 372 of the valve 370 is open, the control valve 362 and control valve 371 is in the closed state, this time, the etching gas the space above 301,320 into the reaction chamber through the intake conduit, under the effect of the electromagnetic field inside the reaction chamber is a plasma dissociation neutral radicals or plasma etching of the substrate, while on the side wall 312 or the bottom plate 313 an exhaust port 323 is provided, an exhaust duct 322 is connected a gas supply system 350, the space below the reaction gas into the deposition chamber 302, such that the etching gas need not sufficient to fill the reaction chamber that can achieve the required pressure conditions etching step, a considerable to disguise the volume of the reaction chamber is reduced, saving the etching gas. 底板313与抽气栗340相连,用以排出反应腔内的气体。 Li and suction plate 313 is connected to 340, is discharged to the gas reaction chamber. 由于反应腔下方空间302位于基片336的下方,其空间内的沉积气体不会对刻蚀反应造成影响。 Since the space below the reaction chamber 302 is positioned below the substrate 336, the deposition gas in the space which does not affect the etching reaction.

[0033] 在沉积步骤开始时,控制阀门362和控制阀门371处于打开状态,控制阀门361和控制阀门372处于闭合状态,此时,沉积气体通过进气管道320进入反应腔上方空间301内,在刻蚀出的孔洞内侧面和底部形成氟碳聚合物层,同时,刻蚀气体通过排气管道322进入反应腔下方空间302,使得沉积气体无需填充满整个反应腔即能达到沉积步骤所需要的压力状态,相当于变相的减小了反应腔的容积,节省了沉积气体。 [0033] In the deposition step starts, the control valve 362 and control valve 371 is open, the control valve 361 and control valve 372 is in the closed state, this time, the deposition gas through the intake duct 320 into the space above the reaction chamber 301, in fluorocarbon polymer layers are formed to etch the sides and bottom of the holes, at the same time, the etching gas 322 enters the space below the reaction chamber through the exhaust duct 302, so that the deposition without the gas sufficient to fill the reaction chamber that can achieve the desired deposition step pressure state corresponding to the reduced volume of the disguise of the reaction chamber, the deposition gas saving. 由于反应腔下方空间302位于基片336的下方,其空间内的刻蚀气体不会对沉积反应造成影响。 Since the space below the reaction chamber 302 is positioned below the substrate 336, the etching gas in a space which does not affect the deposition reaction.

[0034]在本实施例中,限制环330包括若干个槽状通道,所述槽状通道的大小被设置成当所述带电粒子通过所述通道时可以使带电粒子被中和,以限制等离子体的通过。 [0034] In the present embodiment, the confinement ring 330 includes a plurality of groove-like channels, the size of the groove-like channels are arranged such that when the charged particles may be charged particles through the passage and to limit the plasma through the body. 本实施例的其他技术特征和上述实施例相同,此处不再一一赘述。 Other technical features of the present embodiment and the previous embodiment, not detailed herein.

[0035]本发明的技术方案不受等离子体反应腔的结构和产生等离子体的技术影响,在需要对基片进行刻蚀步骤和沉积步骤交替进行刻蚀的技术中,都可以采用本发明所述的技术方案,尽管本发明的内容已经通过上述优选实施例作了详细介绍,但应当认识到上述的描述不应被认为是对本发明的限制。 The structure of the reaction chamber [0035] aspect of the present invention is not limited influence of plasma and plasma generation technique, the need for the substrate etching step and the deposition step are alternately etching techniques, the present invention may be employed aspect described later, although the present invention have been described in detail by the above preferred embodiments, it should be appreciated that the above description should not be construed as limiting the present invention. 在本领域技术人员阅读了上述内容后,对于本发明的多种修改和替代都将是显而易见的。 After the skilled artisan reading the foregoing, various modifications and alternatives to the present invention will be apparent. 因此,本发明的保护范围应由所附的权利要求来限定。 Accordingly, the scope of the invention be defined by the appended claims.

Claims (10)

1.一种实现反应气体快速切换的等离子体反应室,包括一反应腔,所述反应腔内设置一限制环,所述限制环将所述反应腔间隔为反应腔上方空间和反应腔下方空间,其特征在于:所述反应腔上方空间设置开口连接气体供应系统,所述气体供应系统包括至少两个流量控制器,用于分别控制第一气体和第二气体交替进入所述反应腔上方空间内,所述反应腔下方空间设置一开口,连接所述气体供应系统,所述流量控制器分别控制所述第一气体和第二气体交替进入所述反应腔下方空间内。 A plasma reaction chamber to achieve fast switching of the reaction gas, comprising a reaction chamber, said reaction chamber provided with a confinement ring, said confinement ring spacing the reaction chamber and the reaction chamber upper space beneath the reaction chamber space characterized in that: the reaction space is provided above the chamber opening connecting the gas supply system, the gas supply system comprises at least two flow controllers for respectively controlling the first and second gases alternately into the space above the reaction chamber within the space beneath the reaction chamber is provided an opening connecting the gas supply system, a flow controller to control respectively said first and second gases alternately into the reaction space below the chamber.
2.根据权利要求1所述的等离子体反应室,其特征在于:所述第一气体为刻蚀气体,所述第二气体为沉积气体,或者所述第一气体为沉积气体,所述第二气体为刻蚀气体。 The plasma reaction chamber according to claim 1, wherein: said first gas as an etching gas, the deposition gas is the second gas, the first gas or the deposition gas, the second two gas is an etching gas.
3.根据权利要求2所述的等离子体反应室,其特征在于:所述刻蚀气体包括Ar、02、SF6;所述沉积气体包括Ar和C4F8。 3. The plasma reaction chamber according to claim 2, wherein: said etching gas includes Ar, 02, SF6; the deposition gas comprises Ar and C4F8.
4.根据权利要求1所述的等离子体反应室,其特征在于:所述限制环包括若干个槽状通道,所述槽状通道的大小被设置成当带电粒子通过所述槽状通道时可以使带电粒子被中和,以限制等离子体的通过。 The confinement rings may comprise a plurality of groove-like channels, the size of the groove-like channels are arranged such that when charged particles through the slot-shaped passage when: The plasma reaction chamber according to claim 1, characterized in that the charged particles are neutralized by the plasma to limit.
5.根据权利要求1所述的等离子体反应室,其特征在于:所述限制环包括若干个大致为圆孔状的气体通道,所述气体通道的内径小于等于10mm。 The plasma reaction chamber according to claim 1, wherein: said limiting ring includes a plurality of substantially circular-shaped gas passage, the inner diameter of the gas passage is smaller than or equal 10mm.
6.根据权利要求1所述的等离子体反应室,其特征在于:所述气体供应系统包括刻蚀气体流量控制器和沉积气体流量控制器,所述刻蚀气体流量控制器和沉积气体流量控制器前端分别连接刻蚀气体源和沉积气体源,后端分别连接两个控制阀门。 6. The plasma reaction chamber according to claim 1, wherein: said etching gas supply system comprises a gas flow controller and the deposition gas flow controller, the flow controller etching gas and deposition gas flow control are connected to the front end of the etching gas source and the deposition gas source, two control valves are connected to the rear end.
7.根据权利要求1所述的等离子体反应室,其特征在于:所述反应腔包括一大致呈圆筒状的侧壁和位于侧壁上方的顶板,所述顶板下方设置一气体喷淋头,用以将通过所述反应腔上方开口处注入的反应气体均匀分散到反应腔内。 7. The plasma chamber according to claim 1, characterized in that: said reaction chamber comprises a substantially cylindrical side walls and a top plate located above the side walls, a gas disposed below the top plate of said shower head for the reaction gas injected through the upper opening of the reaction chamber is uniformly dispersed into the reaction chamber.
8.根据权利要求1所述的等离子体反应室,其特征在于:所述反应腔包括一大致呈圆筒状的侧壁和位于侧壁上方的顶板,所述侧壁靠近顶板的一端均匀设置若干个气体注入口,用于将气体供应系统中的反应气体均匀注入所述反应腔内。 8. The plasma chamber according to claim 1, characterized in that: said reaction chamber comprises a generally cylindrical sidewall and top plate located above the sidewall, the sidewall is provided near one end of the top plate of uniform a plurality of gas injection port, a reaction gas for the gas supply system uniformly injected into the reaction chamber.
9.一种快速切换反应气体的方法,其特征在于:包括下列步骤: 刻蚀步骤,控制刻蚀气体流量控制器后端的控制阀门,提供刻蚀气体到反应腔上方空间,同时控制沉积气体流量控制器后端的控制阀门,提供沉积气体到反应腔下方空间; 沉积步骤:控制沉积气体流量控制器后端的控制阀门,提供沉积气体到反应腔上方空间;同时控制刻蚀气体流量控制器后端的控制阀门,提供刻蚀气体到反应腔下方空间; 上述刻蚀步骤和沉积步骤交替进行。 9. A method of rapid handover of the reaction gas, characterized by: comprising the steps of: etching step, the rear end of control valve flow controller of an etching gas, the etching gas is provided to the space above the reaction chamber while controlling the flow rate of the deposition gas the rear end of the control valve controller, providing a deposition gas into the space beneath the reaction chamber; deposition step: control of the control valve of the rear end of the deposition gas flow controller, providing a deposition gas into the space above the reaction chamber; simultaneous control of the rear end of the etching gas flow controller valves, providing the etching gas into the reaction chamber space below; and the etching step and the deposition step are alternately performed.
10.根据权利要求9所述的快速切换反应气体的方法,其特征在于:在刻蚀步骤和沉积步骤中,所述刻蚀气体流量控制器和所述沉积气体流量控制器处于常开状态。 10. The method of rapid handover of the reaction gas according to claim 9, wherein: in the etching step and the deposition step, said etching gas flow controller and the deposition gas flow controller in a normally open state.
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Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1675750A (en) * 2002-08-16 2005-09-28 优利讯美国有限公司 Sidewall smoothing in high aspect ratio/deep etching using a discrete gas switching method
CN102498546A (en) * 2009-09-17 2012-06-13 东京毅力科创株式会社 Film formation apparatus
CN102832096A (en) * 2012-09-20 2012-12-19 中微半导体设备(上海)有限公司 Gas supplying device for vacuum treatment devices and gas supplying and switching method of gas supplying device

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4602532B2 (en) * 2000-11-10 2010-12-22 東京エレクトロン株式会社 Plasma processing equipment
JP4493932B2 (en) * 2003-05-13 2010-06-30 東京エレクトロン株式会社 Upper electrode and plasma processing apparatus

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1675750A (en) * 2002-08-16 2005-09-28 优利讯美国有限公司 Sidewall smoothing in high aspect ratio/deep etching using a discrete gas switching method
CN102498546A (en) * 2009-09-17 2012-06-13 东京毅力科创株式会社 Film formation apparatus
CN102832096A (en) * 2012-09-20 2012-12-19 中微半导体设备(上海)有限公司 Gas supplying device for vacuum treatment devices and gas supplying and switching method of gas supplying device

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