CN100458629C - Fluid processing device and fluid processing method - Google Patents
Fluid processing device and fluid processing method Download PDFInfo
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- CN100458629C CN100458629C CNB2003801002273A CN200380100227A CN100458629C CN 100458629 C CN100458629 C CN 100458629C CN B2003801002273 A CNB2003801002273 A CN B2003801002273A CN 200380100227 A CN200380100227 A CN 200380100227A CN 100458629 C CN100458629 C CN 100458629C
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Abstract
A fluid treatment apparatus and a fluid treatment method, the apparatus comprising a treatment container (4) having a loading table (8) for loading a treated body (W) thereon, a gas introducing means (10) introducing treatment gas into the treatment container, treatment gas feed systems (14, 16, 18) feeding specified treatment gases, an inert gas feed system (12) feeding inert gas, a vacuum exhaust system (32) in which a pressure regulating valve (36) allowing a valve opening to be varied and a vacuum pump (38) are installed, and a pressure gauge (48), wherein when a treatment in which the partial pressure of the treatment gas is important is performed, the valve opening of the pressure regulating valve (36) is controlled based on the detected values on the pressure gauge (48) while the treatment gas flows at a specified rate and when a treatment in which the partial pressure of the treatment gas is not so important, the valve opening of the pressure regulating valve (36) is fixed to a specified value and, based on the detected values on the pressure gauge (48), the supplied amount of the inert gas is controlled, whereby even when a plurality of types of the treatments in which the ranges of treatment pressures are largely different from each other are performed, the pressure controls of the treatments can be properly performed.
Description
Technical field
The present invention relates to be used for semiconductor wafer etc. is carried out the treating apparatus and the disposal route of predetermined processing.
Background technology
Generally speaking, in order to make SIC (semiconductor integrated circuit), to on handled objects such as semiconductor wafer, carry out various processing such as film forming processing, etch processes, thermal oxidation, DIFFUSION TREATMENT, upgrading processing, crystallization processing repeatedly, thereby form desirable integrated circuit.In addition,,, also to suitably flow into etching gas, remove the cleaning treatment of above-mentioned unnecessary film in order to remove attached to unnecessary film and particle in the container handling though be not that handled object is handled.
In a treating apparatus, even the processing of above-mentioned different types of processing or identical type makes treatment conditions different and carry out multiple processing sometimes.Generally, be arranged on the exhaust system in the treating apparatus, pressure limit when considering to use this treating apparatus to handle designs, in the working pressure scope, the diameter of setting gas outlet etc. is so that exhaust rate (conductance) reaches best, in addition, the kind of vacuum pump also is set to be fit to the working pressure scope.
Even the processing of above-mentioned different types of processing or identical type, be predefined in the treating apparatus, carry out under the situation of the different a plurality of processing of treatment conditions, when comprising processing that processing pressure is supported and processing pressure high processing, require in each pressure field the pressure in the control and treatment container stably.Under this situation, in traditional treating apparatus, detect the pressure in the container handling, pressure-regulating valve according to this detected value control exhaust system, perhaps (spy opens shown in the flat 10-11152 communique (2-4 page or leaf, Fig. 1-Fig. 5)) as patent documentation 1, in exhaust system, carry out flow control, import steady gas (Ballast Gas) simultaneously.
In addition, the conventional apparatus of known other has, and bypass line is set in exhaust system, according to the working pressure scope it is switched the device of use.According to Fig. 8 one example of this conventional apparatus is described.Fig. 6 is the structure overview of a routine conventional process device.
As shown in the figure, this treating apparatus 2 has the tubular container handling 4 of aluminum, and it can vacuum suction, and portion is provided with the mounting table 8 that possesses firing equipments 6 such as well heater within it, the semiconductor wafer W mounting and be fixed on this mounting table 8.In addition, in the ceiling portion of this container handling 4 shower nozzle 10 is being set, it imports various processing gases in this container handling 4 as the gas gatherer, so the gas jet downwards of a plurality of gas jetting hole 10A below being arranged on this shower nozzle 10.
This shower nozzle 10 respectively with supply with Ar (argon gas), He (helium), N
2The non-active gas feed system 12 of non-active gas such as (nitrogen) and a plurality of system connect, and are connected with 3 treating- gas supply systems 14,16,18 in diagram.For example, in the 1st treating-gas supply system 14, supply with WF
6Processing gas when (tungsten hexafluoride) gas is handled as film forming in the 2nd treating-gas supply system 16, is supplied with H
2The processing gas of (hydrogen) gas during as film forming, and in the 3rd treating-gas supply system 18, supply with ClF
3The processing gas (purge gas) of (chlorine trifluoride) gas during as cleaning treatment.In addition, the centre of the various treating-gas supply systems 14～18 in the centre of non-active gas feed system 12 and the 1st～3rd, in order to control the flow of gas coming through, the 12A of flow control portion, 14A, 16A, the 18A that are made of flow mass controller etc. for example are set respectively.In addition, upper reaches one side of the 12A～18A of each flow control portion and a dirty side are being provided with switch valve 22,24,26,28 respectively, in case of necessity can these valves of switch.
In the bottom of above-mentioned container handling 4 exhausr port 30 is being set, on this exhausr port 30, is connecting vacuum pumping system 32.This vacuum pumping system 32 has the big main exhaust 34 of the big exhaust rate of its internal diameter.On this gas outlet 34, flow the dirty side of a side direction from it, setting gradually adjustable the 1st pressure control valve 36 of valve opening and vacuum pump 38 as throttling valve.The just preceding of above-mentioned the 1st pressure control valve 36 is being provided with switch valve 40 respectively with the dead astern.
In addition, make each switch valve 40 in above-mentioned the 1st pressure control valve 36 and just preceding and dead astern circuitous, make it all to be connected less than the bypass stack 42 of above-mentioned main exhaust 34 with internal diameter and exhaust rate.In this bypass stack 42, as throttling valve, adjustable the 2nd pressure control valve 44 of valve opening is set, simultaneously, the 2nd pressure control valve 44 just before with the dead astern switch valve 46 is set respectively.
The pressure gauge 48 that detects this container internal pressure is set in above-mentioned container handling 4, according to the detected value of this pressure gauge 48, for example the control device 50 that is made of microcomputer is controlled the switching manipulation of the 1st and the 2nd pressure control valve 36,44, vacuum pump 38 and each switch valve 40,46.In addition, this control device 50 is also controlled the integrated operation of this treating apparatus 2, carries out control operation according to a plurality of handling procedures of finishing in advance (also claiming Recipe).
For example, handle, when for example carrying out the processing of tungsten film film forming, only WF as the low pressure that processing pressure is lower
6(tungsten hexafluoride) and H
2The flow of (hydrogen) gas is controlled at setting respectively and flows out (also can flow out non-active gas in case of necessity).Meanwhile, bypass stack 42 makes this switch valve 46 be in closed condition, make the gas bypass stack 42 of can't flowing through, and main exhaust 34 makes this switch valve 40 be in open mode, by adjusting the valve opening of the 1st pressure control valve 36, thereby the pressure in the container handling 4 are maintained fixed.
In contrast, as the higher HIGH PRESSURE TREATMENT of processing pressure, when for example carrying out cleaning treatment, only ClF
3The flow control of (chlorine trifluoride) gas is at setting and flow out (also can flow out non-active gas in case of necessity).Meanwhile, main exhaust 34 makes this switch valve 40 be in closed condition, make gas the 1st pressure control valve 36 of can't flowing through, and bypass stack 42 makes this switch valve 46 be in open mode, make gas stream through bypass stack 42, simultaneously, by adjusting the valve opening of the 2nd pressure control valve 44, thereby the pressure in the container handling 4 are maintained fixed.
So, under the big situation of processing pressure with the little situation of processing pressure under, by switching main exhaust 34 and bypass stack 42, then can tackle the bigger multiple processing of difference of working pressure scope.In addition, as the processing pressure high processing, except above-mentioned cleaning treatment, also have oxidation processes, DIFFUSION TREATMENT etc.
In addition, as corresponding technology of the present invention, known having be disclosed in the patent documentation 2 (spy opens flat 8-290050 (the 4th～5 page, Fig. 1)), for the treating apparatus of bypass stack is set corresponding to the difference in its operating pressure scope under the situation of a plurality of vacuum pumps is set.
(spy opens in the conventional apparatus of record in the flat 10-11152 communique (2-4 page or leaf, Fig. 1-Fig. 5)) patent documentation 1 in front, owing in exhaust system, import the steady gas (Ballast gas) that flow has been controlled, when changing processing pressure on a large scale, the structure of this device just can't be suitable for well.In addition, because the useless non-active gas of a large amount of uses causes the operating cost of device to increase.
In addition, in conventional apparatus shown in Figure 8, because bypass stack 42 need be set, and the 2nd pressure control valve 44 is being set in this bypass stack, therefore, this not only increases the cost of device itself, and owing to number of parts increases, when safeguarding, need a large amount of time, thereby cause maintainability to descend.
The present invention is conceived to the problems referred to above point, produces in order to address this problem effectively.The object of the present invention is to provide a kind for the treatment of apparatus and disposal route.By using this treating apparatus and method,, just can control the pressure of each processing exactly even when the bigger multiple processing of the dimensional discrepancy of carrying out processing pressure, also need not use by-pass pipe and a plurality of pressure control valve.
Other purpose of the present invention is to provide a kind for the treatment of apparatus and disposal route, like this, need not use a plurality of pressure control valves just can control the pressure of each processing exactly.
Summary of the invention
In order to achieve the above object, the present invention the 1st aspect, be a kind of device that possesses with lower member: inside has the container handling of the mounting table of mounting handled object; Import the interior gas gatherer of aforementioned processing container handling gas; Be connected with aforementioned gas gatherer, flow control portion is set in the centre, to supply with the treating-gas supply system of predetermined process gas; Be connected with aforementioned gas gatherer, the centre is provided with flow control portion, to supply with the non-active gas feed system of non-active gas; Be connected with the aforementioned processing container, the pressure control valve that can set valve opening and the vacuum pumping system of vacuum pump are set in the centre; Be arranged on pressure gauge and control device in the aforementioned processing container.Wherein the function mode of control device is, when handling the important processing of the dividing potential drop of gas, this control device sends the instruction of flowing out certain flow to the flow control portion of aforementioned treating-gas supply system, control the valve opening of aforementioned pressure operation valve simultaneously according to the detected value of aforementioned pressure meter, and when the not too important processing of the dividing potential drop of handling gas, this control device makes the valve opening of aforementioned pressure operation valve be fixed on setting, simultaneously according to the detected value of aforementioned pressure meter, the flow control portion by aforementioned non-active gas feed system comes Control Flow.
So, processing pressure is lower carrying out, when handling the important processing of the dividing potential drop of gas, keeping the flow of processing gas is fixed value, adjust the valve opening of pressure control valve simultaneously, in this way the pressure in the container handling is controlled, and in that to carry out processing pressure higher, when handling the not too important processing of the dividing potential drop of gas, the valve opening of the operation valve that keep-ups pressure is a setting, comes pressure in the control and treatment container by the flow of adjusting non-active gas in this state, therefore, when the bigger multiple processing of the dimensional discrepancy of carrying out processing pressure, need not use by-pass pipe and a plurality of pressure control valve, the pressure in the time of also can handling each is exactly controlled.
The present invention the 2nd aspect, a plurality of systems are set in the aforementioned processing gas supply system, when carrying out predetermined process, aforementioned control device is set the valve opening that increases the aforementioned pressure operation valve, in this state, according to the detected value of aforementioned pressure meter, make the throughput ratio of the aforementioned flow control portion of relative each treating-gas supply system remain on certain state substantially, control each flow simultaneously.
The present invention the 3rd aspect when in the aforementioned vacuum pumping system the 2nd vacuum pump being set, makes the pressure control valve of aforementioned vacuum pumping system and aforementioned the 2nd vacuum pump circuitous, is provided with therebetween to have the bypass exhaust channel that switches with switch valve.
The present invention the 4th aspect, the method that is to use a kind for the treatment of apparatus that handled object is handled, this treating apparatus has with lower member, and inside has the container handling of the mounting table of mounting handled object; Import the interior gas gatherer of aforementioned processing container handling gas; Be connected with aforementioned gas gatherer, the centre is provided with flow control portion, to supply with the treating-gas supply system of predetermined process gas; Be connected with aforementioned gas gatherer, the centre is provided with flow control portion, to supply with the non-active gas feed system of non-active gas; Be connected with the aforementioned processing container, the pressure control valve that valve opening can set and the vacuum pumping system of vacuum pump are set in the centre; And be arranged on pressure gauge in the aforementioned processing container.Adopt this method to control in the following manner.When handling the important processing of the dividing potential drop of gas, make the flow of the processing gas of the aforementioned processing gas supply system of flowing through remain on fixed value, control the valve opening of aforementioned pressure operation valve simultaneously according to the detected value of aforementioned pressure meter, and when the not too important processing of the dividing potential drop of handling gas, when making the valve opening of aforementioned pressure operation valve be fixed on setting, according to the detected value of aforementioned pressure meter, control the flow of the aforementioned non-active gas feed system of flowing through.
The present invention the 5th aspect, a plurality of systems are set in the aforementioned processing gas supply system, when carrying out predetermined process, under the state that the valve opening that keeps aforementioned flowrate control valve increases, detected value according to the aforementioned pressure meter, the throughput ratio of the processing gas of aforementioned each treating-gas supply system of flowing through is remained on fixing substantially state, control each flow simultaneously.
The present invention the 6th aspect when carrying out important processing of dividing potential drop and the unessential processing of partial pressure, is controlled aforementioned vacuum pump and is made its rotating speed difference.
The present invention the 7th aspect, the important processing of aforementioned dividing potential drop are that film forming is handled, and the not too important processing of aforementioned dividing potential drop is a cleaning treatment.
The exhaust of aforementioned a plurality of processing by an aforementioned vacuum pumping system, is carried out in the present invention the 8th aspect.
The present invention the 9th aspect, be a kind of device that possesses with lower member: inside has the container handling of the mounting table of mounting handled object; Import the interior gas gatherer of aforementioned processing container handling gas; Be connected with aforementioned gas gatherer, the centre is provided with flow control portion, to supply with the treating-gas supply system of predetermined process gas; Be connected with aforementioned gas gatherer, the centre is provided with flow control portion, to supply with the non-active gas feed system of non-active gas; Be connected with the aforementioned processing container, the centre is provided with the pressure control valve that valve opening can set and the vacuum pumping system of the 1st vacuum pump; Be arranged on the pressure gauge in the aforementioned processing container; And control device, wherein this control device carries out the 1st control, it makes the valve opening of aforementioned pressure operation valve be fixed on setting, and simultaneously according to the detected value of aforementioned pressure meter, the flow control portion by aforementioned non-active gas feed system controls its flow.
The 2nd control is also carried out in the present invention the 10th aspect, aforementioned control device, and it sends the instruction of flowing out certain flow to the flow control portion of aforementioned treating-gas supply system, controls the valve opening of aforementioned pressure operation valve simultaneously according to the detected value of aforementioned pressure meter.The 2nd when being controlled at the important processing of the dividing potential drop of handling gas and be used.
The present invention the 11st aspect, the aforementioned the 1st when being controlled at the not too important processing of the dividing potential drop of handling gas and be used.
The present invention the 12nd aspect, the aforementioned the 1st is controlled at and carries out low pressure when handling and be used, even if this low pressure is that the valve opening of aforementioned pressure operation valve is changed, also can't make the pressure by flow generation substantial variation.
The present invention the 13rd aspect, the method that is to use a kind for the treatment of apparatus that handled object is handled, this device possesses with lower member: inside has the container handling of the mounting table of mounting handled object; Import the interior gas gatherer of aforementioned processing container handling gas; Be connected with aforementioned gas gatherer, the centre is provided with flow control portion, to supply with the treating-gas supply system of predetermined process gas; Be connected with aforementioned gas gatherer, the centre is provided with flow control portion, to supply with the non-active gas feed system of non-active gas; Be connected with the aforementioned processing container, the pressure control valve that valve opening can set and the vacuum pumping system of the 1st vacuum pump are set in the centre; And be arranged on pressure gauge in the aforementioned processing container.Carry out the 1st control in this method, it makes the valve opening of aforementioned pressure operation valve be fixed on setting, and simultaneously according to the detected value of aforementioned pressure meter, the flow control portion by aforementioned non-active gas feed system controls its flow.
The present invention the 14th aspect, it also carries out the 2nd control, and it sends the instruction of flowing out certain flow to the flow control portion of aforementioned treating-gas supply system, controls the valve opening of aforementioned pressure operation valve simultaneously according to the detected value of aforementioned pressure meter.The 2nd when being controlled at the important processing of the dividing potential drop of handling gas and be used.
The present invention the 15th aspect, the aforementioned the 1st when being controlled at the not too important processing of the dividing potential drop of handling gas and be used.
The present invention the 16th aspect, the not too important processing of the dividing potential drop of aforementioned processing gas is a cleaning treatment.
The present invention the 17th aspect, the aforementioned the 1st is controlled at and carries out low pressure when handling and be used, even if this low pressure is that the valve opening of aforementioned pressure operation valve is changed, also can't make the pressure by flow generation substantial variation.
The present invention the 18th aspect, it is plasma etch process that low pressure is handled, even if this low pressure is that the valve opening of aforementioned pressure operation valve is changed, also can't make the pressure by flow generation substantial variation.
The present invention the 19th aspect, the important processing of the dividing potential drop of aforementioned processing gas are that film forming is handled.
The present invention the 20th aspect, a kind for the treatment of apparatus that possesses with lower member, inside has the container handling of the mounting table of mounting handled object; Import the interior gas gatherer of aforementioned processing container handling gas; Be connected with aforementioned gas gatherer, the centre is provided with flow control portion, to supply with the gas supply system of regulation gas; Be connected with the aforementioned processing container, the vacuum pumping system of the pressure control valve that the 1st vacuum pump and the 2nd vacuum pump and valve opening can set arbitrarily is set in the centre; And the pressure gauge that detects the aforementioned processing container pressure.A kind of control device is set in this treating apparatus, and it is controlled in the following manner.Make aforementioned pressure operation valve and aforementioned the 2nd vacuum pump circuitous and the bypass exhaust channel is set, simultaneously in aforementioned bypass exhaust channel, Softstart valve means is set, its function is, alleviates vacuum and take out the living impact of cutting down output when the air pressure in the vacuum extraction container handling.So, when carrying out the lower processing of processing pressure,, adjust the valve opening of aforementioned pressure operation valve according to the detected numerical value of aforementioned pressure meter, control pressure in the aforementioned processing container with this.And when carrying out the processing pressure high processing, stop to aforementioned pressure control valve one side exhaust, make aforementioned Softstart valve means remain on the state of low exhaust rate simultaneously, and make the discharge gas stream through aforementioned bypass exhaust channel.
Like this, in vacuum pumping system, be provided with in the bypass exhaust channel, in this bypass exhaust channel, Softstart valve means is set, for example when carrying out the lower processing of processing pressure, adjust the valve opening of pressure control valve and come the interior pressure of control and treatment container, and when carrying out the processing pressure high processing, stop to above-mentioned pressure control valve one side exhaust, make above-mentioned Softstart valve means remain on low exhaust rate state, and make the discharge gas stream through aforementioned bypass exhaust channel, so then can set the pressure in the container handling, therefore, need not to be provided with a plurality of huge pressure control valves of structure that cost an arm and a leg, just can make the structure miniaturization and the simplification of whole exhaust system.
The present invention the 21st aspect, when carrying out the processing pressure high processing, aforementioned control device is according to the detected value of aforementioned pressure meter, adjusts flow by aforementioned flow control portion, controls pressure in the aforementioned processing container with this.So, when carrying out the processing pressure high processing, just can adjust gas flow and come pressure in the control and treatment container by flow control portion.
The present invention the 22nd aspect, aforementioned Softstart valve means has with lower member, is arranged on the 1st bypass cock valve in the bypass stack of aforementioned bypass exhaust channel, makes the circuitous and auxiliary bypass stack established of the 1st bypass cock valve, is arranged on the 2nd bypass cock valve in this auxiliary bypass stack, is arranged on the little aperture apparatus in this auxiliary bypass stack.
The present invention the 23rd aspect, in order to realize aforementioned low exhaust rate state, aforementioned control device makes aforementioned the 1st bypass cock valve be in closed condition, makes aforementioned the 2nd bypass cock valve be in open mode.
The present invention the 24th aspect, aforementioned Softstart valve means is made of soft starting valve.
The present invention the 25th aspect, the disposal route that is to use a kind for the treatment of apparatus that handled object is handled, this treating apparatus has with lower member.Inside has the container handling of the mounting table of mounting handled object; Import the interior gas gatherer of aforementioned processing container handling gas; Be connected with aforementioned gas gatherer, the centre is provided with flow control portion, to supply with the gas supply system of regulation gas; Be connected with the aforementioned processing container, the vacuum pumping system of the pressure control valve that the 1st vacuum pump and the 2nd vacuum pump and valve opening can set arbitrarily is set in the centre; Detect the pressure gauge of aforementioned processing container pressure.The concrete condition of this method is, make aforementioned pressure operation valve and aforementioned the 2nd vacuum pump circuitous and the bypass exhaust channel is set, simultaneously in aforementioned bypass exhaust channel, Softstart valve means is set, its function is, alleviates vacuum and take out the impact that pressure produces when the air pressure in the vacuum extraction aforementioned processing container.So, when carrying out the lower processing of processing pressure,, adjust the valve opening of aforementioned pressure operation valve according to the detected numerical value of aforementioned pressure meter, control pressure in the aforementioned processing container with this.And when carrying out the processing pressure high processing, stop to aforementioned pressure control valve one side exhaust, simultaneously, make aforementioned Softstart valve means remain on the state of low exhaust rate, and make the discharge gas stream through aforementioned bypass exhaust channel.
Description of drawings
Fig. 1 is the structure overview of the 1st embodiment for the treatment of apparatus of the present invention.
Fig. 2 is the process chart of the 1st disposal route.
Fig. 3 is the process chart of the 2nd disposal route.
Fig. 4 is applicable to that the prerinse of the 3rd disposal route handles the cross section sketch plan of employed mounting table.
Fig. 5 is the process chart of the 3rd disposal route.
Fig. 6 is the structure overview of the 2nd embodiment of expression treating apparatus of the present invention.
Fig. 7 is the structure overview of the 3rd embodiment of expression treating apparatus of the present invention.
Fig. 8 is the structure overview of a routine conventional process device.
Embodiment
With reference to the accompanying drawings, the embodiment to treating apparatus of the present invention and disposal route is described in detail.
(the 1st embodiment)
Fig. 1 is the structure overview of the 1st embodiment of expression treating apparatus of the present invention, Fig. 2 is the process chart of the 1st disposal route, Fig. 3 is the process chart of the 2nd disposal route, Fig. 4 carries out the sectional view that employed mounting table is handled in prerinse, and Fig. 5 is the process chart of the 3rd disposal route when carrying out the prerinse processing.In Fig. 8 for partly marking identical symbol and be described with declaratives same configuration.In addition, following " handling the important processing of dividing potential drop of gas " that will illustrate typically refers to, the processing that processing pressure is low (low pressure processing), and " handling the not too important processing of dividing potential drop of gas " typically refers to the processing that processing pressure is high (HIGH PRESSURE TREATMENT).
As shown in the figure, this treating apparatus 52 have can vacuum suction aluminum tubular container handling 4, portion is provided with the mounting table 8 that possesses firing equipments 6 such as well heater within it, the semiconductor wafer W mounting and be fixed on this mounting table 8.In addition, in the ceiling portion of this container handling 4 shower nozzle 10 is being set, it imports various processing gases in this container handling 4 as the gas gatherer, so the gas jet downwards of a plurality of gas jetting hole 10A below being arranged on this shower nozzle 10.
In addition, the centre of each treating-gas supply system 14～18 of the centre of non-active gas feed system 12 and the 1st～3rd, the flow of the gas of flowing through in order to control for example is provided with the 12A of flow control portion, 14A, 16A, the 18A that are made of mass flow controller etc. respectively.In addition, upper reaches one side of each 12A～18A of flow control portion and a dirty side are being provided with switch valve 22,24,26,28 respectively, as required these valves of switch.
And exhausr port 30 is being set in the bottom of above-mentioned container handling 4, on this exhausr port 30, connecting vacuum pumping system 32.This vacuum pumping system 32 has the big and bigger gas outlet 34 of exhaust rate of internal diameter.The internal diameter of this gas outlet 34 is about 100～150mm.In this gas outlet 34, flow the dirty side of a side direction from it, as throttling valve, the 1st vacuum pump 38 that is setting gradually the adjustable pressure control valve 36 of valve opening and constituting by dry pump.Wherein, on the dead ahead of above-mentioned pressure control valve 36 and the position, dead astern switch valve 40 is being set respectively., in this vacuum pumping system 32, set the ability of internal diameter, pressure control valve 36 and the vacuum pump 38 of pipe arrangement herein,, in other words, promptly realize best exhaust rate required when the tungsten film film forming is handled herein needing to realize the processing of accurate control and treatment partial pressure.In addition, in the present embodiment, employed bypass stack 42 and the 2nd pressure control valve 44 (with reference to Fig. 8) in the conventional apparatus are not set.
In the above-mentioned container handling 4 pressure gauge 48 is set, be used to detect the container handling pressure inside, according to the detected value of this pressure gauge 48, for example the control device 54 that is made of microcomputer etc. is controlled the switching manipulation of above-mentioned each 12A～18A of flow control portion, pressure control valve 36, vacuum pump 38 and each switch valve 22～28,40.In addition, this control device 54 is also controlled the operation of this entire process device 52, and it is to operate control according to a plurality of handling procedures (Recipe) of storage in advance.
As described later, as the important processing of dividing potential drop of handling gas, the low pressure that for example processing pressure is low is handled, when carrying out tungsten film film forming processing etc., respectively WF
6(tungsten hexafluoride) and H
2The flow control of (hydrogen) makes gas flow out (also can flow out non-active gas in case of necessity) at setting simultaneously, meanwhile, by adjusting the valve opening of pressure control valve 36, the pressure in the container handling 4 is maintained fixed.When selecting this pressure control valve 36, in the operating characteristic of pressure control valve 36, select in the best scope of manipulation accuracy.
In contrast, as the not too important high HIGH PRESSURE TREATMENT of processing, for example processing pressure of dividing potential drop of handling gas, when carrying out cleaning treatment, ClF
3The flow control of (chlorine trifluoride) is at setting and make its outflow, also flows out non-active gas simultaneously.Meanwhile, make the valve opening of pressure control valve 36 remain on the valve opening state of regulation,, the pressure in the container handling 4 are maintained fixed substantially by adjusting the flow of non-active gas.In addition, as the high HIGH PRESSURE TREATMENT of processing pressure, for example also comprise oxidation processes or DIFFUSION TREATMENT etc.
Below, the disposal route that treating apparatus carried out of using above-mentioned structure is described.
Manage important processing, for example tungsten film film forming of dividing potential drop of handling gas in the device 52 herein and handle, and not too important processing, for example cleaning treatment of partial pressure of handling gas, below these processing are described respectively.In addition, said herein " processing " not only comprise when having semiconductor wafer W in the container handling 4, the cleaning treatment that also comprises when not having semiconductor wafer W being carried out.
(handle the important processing of dividing potential drop of gas: the film forming of tungsten film is handled)
At first, the important processing of dividing potential drop of handling gas is described.
The important processing of the dividing potential drop of said herein processing gas is meant, for example uses WF
6(tungsten hexafluoride) and H
2(hydrogen) is piled up the film forming of tungsten film and is handled.For according to appropriate film forming ratio, and homogeneity in the surface of thickness in the wafer surface is kept under the higher state, pile up the good tungsten film of electrical specification, must accurately keep flow, throughput ratio, processing pressure, treatment temperature of above-mentioned two kinds of gases etc.For example carry out this processing according to process flow diagram shown in Figure 2.
At first, if on the mounting table 8 of container handling 4 the untreated semiconductor wafer W of mounting, then drive the vacuum pump 38 of vacuum pumping system 32, to carrying out vacuum suction in this container handling 4, make vacuum pump 38 keep film forming to handle the rotating speed (S1) of defineds afterwards.It is different when in addition, this rotating speed is sometimes with cleaning treatment.Meanwhile, wafer W is heated make its temperature that is set to regulation (S2).Then, handle required WF beginning to carry out film forming respectively
6(tungsten hexafluoride) and H
2The flow set of (hydrogen) is the flow of regulation and gas is flowed out, piles up tungsten film (S3).Then, in this film forming is handled, often detect pressure (S4) in the container handling 4 by pressure gauge 48, this detected pressure value compares with the setting value that is set in advance in the control device 54, suitably adjust the valve opening that is arranged on the pressure control valve 36 on the gas outlet 34, make detected value equate (NO of S5, S6) with setting value.Above-mentioned film forming is handled and is carried out (YES of S5, the NO of S7) with official hour, if carry out after this film forming handles (YES of S7) with the stipulated time, and end process then.The above-mentioned film forming processing time is longer than the adjustment time (about the several seconds) of above-mentioned pressure control valve 36, and carries out can exerting an influence to thickness hardly when film forming is handled.
(the not too important processing of dividing potential drop of processing gas: cleaning treatment)
Below, the not too important processing of dividing potential drop of handling gas is described.
The not too important processing of the dividing potential drop of said herein processing gas is meant, for example utilizes purge gas to remove the unnecessary such cleaning treatment of deposited film in the container handling.Rate of etch in order to ensure regulation need make the flow of purge gas and processing pressure remain on predetermined setting value respectively.Processing pressure when in addition, the setting value of processing pressure is far above film forming processing before at this moment.For example can carry out this processing according to process flow diagram shown in Figure 3.
At first, in container handling 4, take out wafer W, make in the container handling 4 to be in air-tight state, make vacuum pump 38 be set at the required regulation rotating speed of predetermined cleaning and keep this numerical value (S11).Then, flow out Ar non-active gas such as (argon gas), meanwhile,, for example make ClF as handling gas
3(chlorine trifluoride) such purge gas is set at the flow of regulation and flows out, so begin to carry out cleaning treatment (S12).Meanwhile, make pressure control valve 36 be set at predetermined regulation valve opening, continue to keep this state (S13).This valve opening can be tried to achieve in advance by experiment, so that the exhaust rate of the vacuum pumping system 32 during cleaning treatment reaches best.
Then, in this cleaning treatment, often detect pressure (S14) in the container handling 4 by pressure gauge 48, this detected pressure value compares with the setting value that is set in advance in the control device 54, suitably adjust the 12A of flow control portion that is arranged in the non-active gas feed system 12, make detected value equate (NO of S15, S16) with setting value.In addition, herein in the reason process, ClF
3The flow of (chlorine trifluoride) gas is often remained on fixed value.Above-mentioned cleaning treatment is carried out (YES of S15, the NO of S17) with official hour, if after carrying out this cleaning treatment (YES of S17) with the stipulated time, and end process then.
As mentioned above, the unnecessary sedimental cleaning treatment of handling and removing in the container handling 4 with the film forming of tungsten film is the same, when the bigger multiple processing of the dimensional discrepancy of carrying out processing pressure, do not use by-pass pipe or a plurality of pressure control valve, the pressure in the time of still can be to various handle is controlled exactly.
In addition,, then also can safeguard apace, therefore can improve maintainability owing to use number of spare parts also to reduce.
In addition, at this moment, compare with the responder action of pressure control valve 36 usually, the responder action of the 12A of flow control portion is very fast, so, carry out pressure control by the 12A of flow control portion and can reach processing pressure quickly.Therefore, come the conventional apparatus of controlled pressure different with working pressure operation valve in all processing, but in a part is handled, use responder action flow control faster portion to carry out pressure control, then the processing time shortening, thus throughput can be improved.
Be below and above-mentioned illustrated each handle different situations, use multiple processing gas to carry out in the processing, if in the dividing potential drop scope of regulation, then can not reduce the quality of result and carry out this processing.When carrying out this processing, increase the valve opening of pressure control valve 36, for example make it be set at 100%, then, make the above-mentioned throughput ratio that each handles gas remain on stationary state, adjust the flow that each handles gas simultaneously, come the pressure in the control and treatment container 4, also can only carry out predetermined process by adjusting flow.
In the object lesson of this processing, the treating apparatus that has the mounting table of electrostatic chuck as use, the prerinse processing that for example can enumerate PVD (Physical Vapar Deposition, physical vapour deposition (PVD)) and handle, be undertaken by plasma device, dry-etching processing etc.
Fig. 4 is the sectional view of mounting table when carrying out this prerinse processing in one embodiment.
This mounting table 101 has electrostatic chuck 107 on its main body 103, DC electrode 102 is embedded in this electrostatic chuck 107.By the flow through electric current of this DC electrode 102 of ON/OFF (ON/OFF), make wafer absorption or break away from.This electrostatic chuck 107 is made of the dielectric insulation parts, and mounting wafer W on this electrostatic chuck 107.Be used for the heat exchange media path 109 of cooling electrode and form on the mounting table main body 103, by medium supply with road 106, medium reclaim road 108, the cooling fluid is supplied with in circulation, as the fluid (ガ Le テ Application) of water and fluorine class etc.Afterwards, this cooling makes mounting table 103 coolings with fluid, and wafer W also is cooled thereupon.In addition, in electrostatic chuck 107, between wafer W and mounting table 101, be provided with and supplying with as gas importing road 117 that He (helium) etc. has the backside gas (BackSide Gas) of high thermoconductivity.This backside gas is supplied with road 105 by gas and is supplied to, and flows through between wafer W and the dielectric insulation parts, then be easy to from by the wafer W of Cement Composite Treated by Plasma to electrode heat conduction, thereby promote cooling effect raising etching efficiency.This backside gas imports road 117 from backside gas and is discharged from, and between the wafer W of flowing through and the dielectric insulation parts, shown in arrow R, flows in the container handling around wafer W.
When using this mounting table 101 to handle,,, perhaps need the quantity delivered of corresponding adjustment backside gas so the quantity delivered of backside gas produces small change because the chip temperature that should control when carrying out Cement Composite Treated by Plasma changes at every turn.Therefore, the also change of pressure in the chamber along with each processing of wafers, but because the change of the pressure in this chamber is small, so can't adjust by pressure control valve 36.
For by the supply of non-active gas being finely tuned the pressure change that prevents in this chamber, carry out prerinse according to flow process shown in Figure 5 and handle.
At first, drive the vacuum pump 38 of vacuum pumping system 32,, then, make vacuum pump 38 keep the rotating speed (S21) of regulation, clamp wafer W (S22) afterwards carrying out vacuum suction in this container handling 4.Then, the backside gas that the Ar argon gas is constituted is flowed through between wafer W and the dielectric film 111 (S23).Afterwards, non-active gas is flow in the chamber, be regulation flow (S24) handling gas setting.In addition, meanwhile, pressure control valve 36 is set at the valve opening (S25) of regulation.Measure the pressure (S26) that detects in the container by pressure gauge 48 then.This detected value compares (S27) with the setting value that is set in advance in the control device 54.If detected value and setting value are inequality, then control device 54 is suitably adjusted the 12A of flow control portion that is arranged in the non-active gas feed system 12, so that detected value identical with setting value (S28).In addition, if detected value is identical with setting value, then control device 54 carries out plasma ignition (S29).Judge whether to have reached the predetermined process time (S30), if reached the processing time then end process.
As above explanation in this control, can prevent owing to backside gas is leaked the cavity indoor pressure generation small variations that causes by accurately adjusting the quantity delivered of non-active gas.In this case, owing to need not adjust the valve opening of pressure control valve 36, only by the control operation of answer speed flow control faster portion, just can control and treatment pressure.So just can improve controlled, thereby improve throughput.
(the 2nd embodiment)
In above-mentioned each embodiment, so that a gas outlet 34 shown in Figure 1 to be set, and the situation a when vacuum pump 38 is set on this gas outlet is that example is illustrated, but, in the time of exhaust capacity can't being satisfied if only use a vacuum pump 38, also can adopt the structure of the 2nd embodiment shown in Figure 6.Promptly in this case, the mode with series connection on above-mentioned pressure control valve 36 is provided with the 2nd vacuum pump 60 that is made of turbomolecular pump, and bypass exhaust channel 62 is connected with gas outlet 34, thereby makes this pressure control valve 36 circuitous with above-mentioned the 2nd vacuum pump 60.The switch valve 64 that switches usefulness is set in the centre of this bypass exhaust channel 62.In addition, the internal diameter of this bypass exhaust channel 62 is about 25～40mm.
In the present embodiment, when in to container handling 4, carrying out vacuum suction, at first, close the switch valve 40 of gas outlet 34, and the switching of opening bypass stack 62 makes it be communicated with bypass stack 62 with switch valve 64, then, drive vacuum pump 38, to vacuum suction in the container handling 4 by rotation.After extracting to a certain degree, if the pressure in the container handling 4 drops to the specified vacuum degree, then open the switch valve 40 of gas outlet 34, make the 2nd vacuum pump 60 also rotate driving simultaneously.Afterwards, make the switching of bypass stack 62 be in closed condition with switch valve 64.So, proceed vacuum suction by vacuum pump 38 and the 2nd vacuum pump 60 these two vacuum pumps of using before.In addition, when carrying out the processing pressure high processing, when for example carrying out cleaning treatment, also can close the switch valve 40 of gas outlet 34, only use bypass stack 62 to carry out vacuum suction, carry out cleaning treatment simultaneously.In the present embodiment, when carrying out the bigger a plurality of processing of the dimensional discrepancy of processing pressure, also can be according to carrying out referring to figs. 1 through the identical mode of the illustrated mode of Fig. 5 with above-mentioned.
(the 3rd embodiment)
Below the 3rd embodiment of the present invention is described.
Fig. 7 is the structure overview of the 3rd embodiment for the treatment of apparatus of the present invention.For with Fig. 1, Fig. 6 and Fig. 8 in the identical part of declaratives structure, mark identical symbol, relevant its explanation repeats no more.In addition, the processing that the processing pressure that this place will illustrate is lower is meant, the important processing of dividing potential drop of the processing gas that the front has illustrated, and the processing pressure high processing is meant, handles the unessential processing of dividing potential drop of gas.
As shown in Figure 7, herein in the main exhaust 34, flow the dirty side of a side direction from it, the 2nd vacuum pump 60 that sets gradually pressure control valve 36, is made of turbomolecular pump and the 1st vacuum pump 38 that is made of dry pump are being provided with switch valve 40 respectively in the approaching dirty side near upper reaches one side and the 2nd vacuum pump 60 of pressure control valve 36.
Make above-mentioned pressure control valve the 36, the 2nd vacuum pump 60 and two switch valves 40 circuitous and establish, be connected with above-mentioned main exhaust 34 so become the bypass exhaust channel 62 of bypass stack.As previously mentioned, the internal diameter of this main exhaust 34 is a heavy caliber, be approximately about 100～150mm, and the internal diameter of bypass stack path 62 is small-bore, is approximately about 25～40mm.
The centre of this bypass exhaust channel 62 is being provided with Softstart valve means 70, and its function is, during air pressure in vacuum drawn container handling 4, alleviates vacuum and takes out the impact that pressure produces.So, when carrying out the lower processing of processing pressure (for example film forming processing etc.), control device 54 is according to the detected numerical value of pressure gauge 48 that is arranged in the container handling 4, by adjusting the valve opening of above-mentioned pressure control valve 36, controls pressure in the above-mentioned container handling 4 with this.And when carrying out processing pressure high processing (for example cleaning treatment, oxidation processes, DIFFUSION TREATMENT etc.), control device 54 stops to above-mentioned pressure control valve 36 exhausts, simultaneously, make above-mentioned Softstart valve means 70 remain on low exhaust rate state, and make the discharge gas stream through bypass exhaust channel 62.
Its concrete condition is that above-mentioned Softstart valve means 70 is by constituting with lower device.Be arranged on the 1st bypass cock valve 72 in the above-mentioned bypass exhaust channel 62 so that the circuitous mode of the 1st bypass cock valve 72, the less auxiliary bypass stack 74 of the internal diameter that is connected with above-mentioned bypass exhaust channel 62, be arranged on aperture device 76 and the 2nd bypass cock valve 78 on this auxiliary bypass stack 74 in turn.
As everyone knows, aperture device 76 herein has the aperture (not shown) that dwindles flow path area, make above-mentioned the 1st bypass cock valve 72 be in closed condition, and make the 2nd bypass cock valve 78 be in open mode, so just can make whole Softstart valve means 70 be in lower exhaust rate state.Herein, the size of each internal diameter of this bypass exhaust channel 62 and auxiliary bypass stack 74 and the aperture flow path area of above-mentioned aperture device 76 is preestablished respectively, if carry out the processing pressure high processing like this, required processing pressure in the time of then can obtaining to flow out the processing gas of required flow substantially is so its exhaust rate is fixed.
In other words, when carrying out the processing pressure high processing, because a lot of situation need not accurate CONTROL PROCESS pressure, therefore, in this case, the pressure control in the container handling 4 is carried out according to predetermined fixing exhaust rate, need not carry out active operations such as adjustment to valve opening especially.
Below, the operation of an embodiment of above-mentioned structure is described.
(from the atmospheric pressure vacuum suction)
In the container handling 4 is atmospheric pressure state, during air pressure in this state vacuum drawn container handling 4, at first, close two switch valves 40 of main exhaust 34, the 2nd vacuum pump 60 that isolation is made of turbomolecular pump is unless can use turbomolecular pump after its vacuum tightness that acquires a certain degree.Meanwhile, in Softstart valve means 70, close the 1st bypass cock valve 72 that is arranged in the bypass exhaust channel 62, and open the 2nd bypass cock valve 78 that is arranged in the auxiliary bypass stack 74, so this Softstart valve means 70 is in lower exhaust rate state.Under this state, drive the 1st vacuum pump 38 beginning vacuum suctions.At this moment, because the environment in the container handling 4 can only carry out exhaust by the aperture that is arranged on the aperture device 76 in the auxiliary bypass stack 74, therefore, as mentioned above, exhaust rate is in quite low state.So carrying out the impact of vacuum suction generation in container handling 4 is alleviated, and become very few, can prevent that so not only structure in the container handling 4 and particle moment from dispersing etc., and need not remove the film of not wanting attached to container handling 4 inner wall surface and internal structure thing surface, just can prevent the generation of particle.
The result of vacuum suction is, if the vacuum tightness that acquires a certain degree (for example 1330Pa) is then switched the 1st bypass cock valve 72 to open mode, whole bypass exhaust channel 62 is carried out vacuum suction.At this moment, the 2nd bypass cock valve 78 can open also and can cut out.
Proceed vacuum suction,, promptly reach the degree of the upper limit force value 133Pa of turbomolecular pump, then switch two switch valves 40 being arranged in the main exhaust 34, meanwhile, begin to drive the 2nd vacuum pump 60 to open mode if reach the specified vacuum degree.At this moment, make the 1st pressure control valve 36 be in full open position.In addition, meanwhile, the above-mentioned the 1st and the 2nd bypass cock valve 72,78 all switches to closed condition.So then can be vacuum suction in the container handling 4 to the lower pressure environment.
(processing that processing pressure is low: for example film forming is handled)
Below, the pressure control when carrying out the low processing of processing pressure in the container handling 4, the situation during with the important processing of the dividing potential drop of the processing gas that has illustrated among the 1st embodiment is identical substantially.
The the 1st and the 2nd bypass cock valve 72,78 that is Softstart valve means 70 all keeps closed condition, simultaneously, two switch valves 40 of main exhaust 34 stay open state, adjust the valve opening of pressure control valve 36 according to the detected value of pressure gauge 48, thus the pressure in the control and treatment container 4.At this moment, the flow of each gas is to be set in mode in the program (Recipe) and the value of being maintained fixed respectively.The treatment process pressure that this processing pressure is low is the pressure about number 10Pa～number 100Pa.
(processing that processing pressure is high: for example cleaning treatment and oxidation processes)
Below, the pressure control when carrying out the high processing of processing pressure in the container handling 4 describe.
In this case, identical with the atmospheric situation of beginning vacuum drawn in container handling 4, be in low exhaust rate state.Situation when promptly handling with aforementioned film forming is opposite, closes two switch valves 40 that are arranged on the main exhaust 34 simultaneously, isolates the 2nd vacuum pump 60.And, keep the closed condition of the 1st bypass cock valve 72 for Softstart valve means 70, and keep the open mode of the 2nd bypass cock valve 78 simultaneously, by aperture device 76,, discharge gas and be evacuated only by auxiliary bypass stack 74.At this moment, the exhaust rate of Softstart valve means 70, even if be in buttoned-up status, also the exhaust rate with the pressure control valve 36 that produces micro gap is identical.
Like this, then can under the state of the operation pressure in increasing container handling 4, handle.So the treatment process pressure that processing pressure is high for example is the pressure about number 1000Pa～number 20000Pa.
In the high processing of above-mentioned processing pressure, though active the pressure in the control and treatment container 4, but it is not limited thereto, for example detect pressure in the container handling 4 this moment by pressure gauge 48, the pressure that keeps regulation according to this detected value, adjust the Control Flow controllers by control device 54 and come the pilot-gas flow, for example control the flow of non-active gas and purge gas or carry out the flow of oxidation processes time control oxygenerating gas.
If adopt this mode, then when carrying out the high processing of processing pressure, also CONTROL PROCESS pressure accurately.
In addition, for above-mentioned Softstart valve means 70, be that example is illustrated with situation about being constituted by auxiliary bypass stack the 74, the 1st and the 2nd bypass cock valve 72,78 and aperture device 76.In addition, as Softstart valve means 70, also can use the soft starting valve (registered trademark) that has following three functions concurrently as the manufacturing of SMC company.The one, can make the function, the 2nd that is set at buttoned-up status in the above-mentioned bypass exhaust channel 62, the function that is set at low exhaust rate state in this bypass exhaust channel 62 can be made and the function that is set at the middle-grade exhaust rate state slightly higher in this bypass exhaust channel 62 can be made than above-mentioned low exhaust rate.
Also having, in above-mentioned each embodiment, is that example is illustrated tungsten film is carried out the situation of film forming when handling.In addition, during the film film forming of other kind, also be applicable to the present invention.
In addition,, be not limited to film forming and handle, carry out also can being suitable for when other is handled as the important processing of dividing potential drop of handling gas.Equally, the not too important processing of dividing potential drop as handling gas is not limited to cleaning treatment, and when carrying out other processing, when for example carrying out above-mentioned oxidation processes or DIFFUSION TREATMENT, the present invention also can be suitable for.
In addition, the supply mode of each gas, only represented an example nothing but, along with increase or the minimizing of handling gaseous species, the quantity of gas supply system also correspondingly increases or reduces, and also has, about the structure of shower nozzle 10, no matter be that gas sprays the premixed mode (Premix) that makes its mixing before in advance to container handling 4 in, or after shower nozzle 10 injections and make the back hybrid mode (Postmix) of its mixing, this dual mode all is applicable to the present invention handling.In addition, do not use the gas gatherer of shower nozzle 10 to go for the present invention yet.
In addition, this treating apparatus of sentencing one chip is that example is illustrated.In addition, the batch-type treating apparatus of can be once the multi-disc handled object being handled is also applicable to the present invention.
In addition, the mainly control of being undertaken by mass flow controller, the PVD (physical vapour deposition (PVD)) that is used under the situation mostly carrying out in the scope of regulation dividing potential drop handles, and pressure control valve is used for CVD (chemical vapor deposition) to be handled.In addition, also can be applied to use identical device to carry out the situation of PVD and these two kinds of processing of CVD.
In addition, in the above-described embodiments, be that example is illustrated with the semiconductor wafer as handled object, but not limited thereto, can certainly be applicable to glass substrate, LCD (LCD) substrate etc.
In addition, in the above-described embodiments, when carrying out pressure control, make one in temperature control part or the pressure control valve to fix, also can make temperature control part and pressure control valve fixing, carry out pressure control by the multi-pass operations of two members.
Claims (21)
1. a treating apparatus is characterized in that, has with lower member:
Inside has the container handling of the mounting table of mounting handled object;
Import the interior gas gatherer of described container handling handling gas;
Be connected with described gas gatherer, flow control portion is set in the centre, to supply with the treating-gas supply system of predetermined process gas;
Be connected with described gas gatherer, the centre is provided with flow control portion, to supply with the non-active gas feed system of non-active gas;
Be connected with described container handling, be provided with the pressure control valve that valve opening can set and the vacuum pumping system of vacuum pump in the centre;
Be arranged on the pressure gauge in the described container handling; And
Control device; When the important processing of the dividing potential drop of processing gas; This control device sends the instruction of flowing out certain flow to the flow-control section of described treating-gas supply system; Control simultaneously the valve opening of described pressure-control valve according to described manometric detected value; And when the not too important processing of the dividing potential drop of processing gas; This control device makes the valve opening of described pressure-control valve be fixed on setting; Simultaneously according to described manometric detected value; Flow-control section by described non-active gas feed system controls flow
The important processing of described dividing potential drop is that film forming is handled, and the not too important processing of described dividing potential drop is cleaning treatment, oxidation processes or DIFFUSION TREATMENT.
2. treating apparatus as claimed in claim 1, it is characterized in that, a plurality of systems are set in the described treating-gas supply system, when carrying out predetermined process, described control device is set the valve opening that increases described pressure control valve, in this state, according to described manometric detected value, for the described flow control portion of each treating-gas supply system, make the throughput ratio of handling gas remain on certain state substantially, control each flow simultaneously.
3. as claim 1 or the described treating apparatus of claim 2, it is characterized in that, when in the described vacuum pumping system the 2nd vacuum pump being set, the bypass exhaust channel is set, this bypass exhaust channel gets around the pressure control valve and described the 2nd vacuum pump of described vacuum pumping system, is provided with to switch in the middle of this bypass exhaust channel to use switch valve.
4. a disposal route uses a kind for the treatment of apparatus that handled object is handled, and this treating apparatus has with lower member:
Inside has the container handling of the mounting table of mounting handled object;
Import the interior gas gatherer of described container handling handling gas;
Be connected with described gas gatherer, the centre is provided with flow control portion, to supply with the treating-gas supply system of predetermined process gas;
Be connected with described gas gatherer, the centre is provided with flow control portion, to supply with the non-active gas feed system of non-active gas;
Be connected with described container handling, the pressure control valve that valve opening can set and the vacuum pumping system of vacuum pump are set in the centre; And
Be arranged on the pressure gauge in the described container handling,
Wherein, when handling the important processing of the dividing potential drop of gas, the flow of the processing gas of the described treating-gas supply system of flowing through is maintained fixed, control the valve opening of described pressure control valve simultaneously according to described manometric detected value, and when the not too important processing of the dividing potential drop of handling gas, when making the valve opening of described pressure control valve be fixed on setting, according to described manometric detected value, control the flow of the non-active gas of the described non-active gas feed system of flowing through
The important processing of described dividing potential drop is that film forming is handled, and the not too important processing of described dividing potential drop is cleaning treatment, oxidation processes or DIFFUSION TREATMENT.
5. disposal route as claimed in claim 4, it is characterized in that, a plurality of systems are set in the described treating-gas supply system, when carrying out predetermined process, under the state that the valve opening that keeps described flowrate control valve increases, according to described manometric detected value, the throughput ratio of the processing gas of described each treating-gas supply system of flowing through is remained on fixing substantially state, control each flow simultaneously.
6. as claim 4 or the described disposal route of claim 5, it is characterized in that, when carrying out the not too important processing of important processing of dividing potential drop and dividing potential drop, control described vacuum pump and make its rotating speed difference.
7. as claim 4 or 5 described disposal routes, it is characterized in that,, carry out the exhaust of described a plurality of processing by a described vacuum pumping system.
8. treating apparatus has with lower member:
Inside has the container handling of the mounting table of mounting handled object;
Import the interior gas gatherer of described container handling handling gas;
Be connected with described gas gatherer, the centre is provided with flow control portion, to supply with the treating-gas supply system of predetermined process gas;
Be connected with described gas gatherer, the centre is provided with flow control portion, to supply with the non-active gas feed system of non-active gas;
Be connected with described container handling, the centre is provided with the pressure control valve that valve opening can set and the vacuum pumping system of the 1st vacuum pump;
Be arranged on the pressure gauge in the described container handling; And
Control device, this control device carry out the 1st control, and it makes the valve opening of described pressure control valve be fixed on setting, and simultaneously according to described manometric detected value, the flow control portion by described non-active gas feed system controls its flow.
9. treating apparatus as claimed in claim 8, it is characterized in that, described control device also carries out the 2nd control, it sends the instruction of flowing out certain flow to the flow control portion of described treating-gas supply system, controls the valve opening of described pressure control valve simultaneously according to described manometric detected value; The 2nd is used when being controlled at the important processing of the dividing potential drop of handling gas,
The important processing of described dividing potential drop is that film forming is handled.
10. treating apparatus as claimed in claim 8 is characterized in that, the described the 1st is used when being controlled at the not too important processing of the dividing potential drop of handling gas,
The not too important processing of described dividing potential drop is cleaning treatment, oxidation processes or DIFFUSION TREATMENT.
11., it is characterized in that the described the 1st is controlled at and carries out being used when low pressure is handled as claim 8 or the described treating apparatus of claim 9,
It is that PVD processing, prerinse processing or dry-etching are handled that described low pressure is handled.
12. a disposal route, this method use a kind for the treatment of apparatus that handled object is handled,
This treating apparatus has with lower member:
Inside has the container handling of the mounting table of mounting handled object;
Import the interior gas gatherer of described container handling handling gas;
Be connected with described gas gatherer, the centre is provided with flow control portion, to supply with the treating-gas supply system of predetermined process gas;
Be connected with described gas gatherer, the centre is provided with flow control portion, to supply with the non-active gas feed system of non-active gas;
Be connected with described container handling, the pressure control valve that valve opening can set and the vacuum pumping system of the 1st vacuum pump are set in the centre; And
Be arranged on the pressure gauge in the described container handling,
Carry out the 1st control in this method, it makes the valve opening of described pressure control valve be fixed on setting, and simultaneously according to described manometric detected value, the flow control portion by described non-active gas feed system controls its flow.
13. disposal route as claimed in claim 12, it is characterized in that, also carry out the 2nd control, it sends the instruction of flowing out certain flow to the flow control portion of described treating-gas supply system, controls the valve opening of described pressure control valve simultaneously according to described manometric detected value; The 2nd is used when being controlled at the important processing of the dividing potential drop of handling gas,
The important processing of described dividing potential drop is that film forming is handled.
14. disposal route as claimed in claim 12 is characterized in that, the described the 1st is used when being controlled at the not too important processing of the dividing potential drop of handling gas,
The not too important processing of described dividing potential drop is cleaning treatment, oxidation processes or DIFFUSION TREATMENT.
15. disposal route as claimed in claim 12 is characterized in that, the described the 1st is controlled at and carries out low pressure when handling and be used,
It is that PVD processing, prerinse processing or dry-etching are handled that described low pressure is handled.
16. a treating apparatus is characterized in that, possesses with lower member:
Inside has the container handling of the mounting table of mounting handled object;
Import the interior gas gatherer of described container handling handling gas;
Be connected with described gas gatherer, the centre is provided with flow control portion, to supply with the gas supply system of regulation gas;
Be connected with described container handling, be provided with the vacuum pumping system of the pressure control valve that the 1st vacuum pump and the 2nd vacuum pump and valve opening can set arbitrarily in the centre; And
Detect the pressure gauge of described container handling pressure,
Wherein, a kind of control device is set, in the mode that gets around described pressure control valve and described the 2nd vacuum pump the bypass exhaust channel is set, in described bypass exhaust channel, be provided with simultaneously have alleviation to container handling in when atmospheric pressure begins to vacuumize vacuum take out the Softstart valve means of the function of the living impact of cutting down output, when carrying out the lower processing of processing pressure, according to described manometric detected value, adjust the valve opening of described pressure control valve, control pressure in the described container handling with this, and when carrying out the processing pressure high processing, stop to described pressure control valve one side exhaust, make described Softstart valve means remain on the state of low air capacity simultaneously, and make the discharge gas stream through described bypass exhaust channel
The processing that described processing pressure is lower is that film forming is handled, and described processing pressure high processing is cleaning treatment, oxidation processes or DIFFUSION TREATMENT.
17. treating apparatus as claimed in claim 16, it is characterized in that when carrying out the processing pressure high processing, described control device is according to described manometric detected value, adjust flow by described flow control portion, control pressure in the described container handling with this.
18., it is characterized in that described Softstart valve means is by constituting with lower member as claim 16 or the described treating apparatus of claim 17:
Be arranged on the 1st interior bypass cock valve of bypass stack of described bypass exhaust channel;
The auxiliary bypass stack that is provided with in the mode that gets around the 1st bypass cock valve;
Be arranged on the 2nd bypass cock valve in this auxiliary bypass stack;
Be arranged on the little aperture apparatus in this auxiliary bypass stack.
19. treating apparatus as claimed in claim 18 is characterized in that, in order to realize described low air capacity state, described control device makes described the 1st bypass cock valve be in closed condition, makes described the 2nd bypass cock valve be in open mode.
20., it is characterized in that described Softstart valve means is made of soft starting valve as claim 16 or 17 described treating apparatus.
21. a disposal route is characterized in that, this method uses a kind for the treatment of apparatus that handled object is handled,
This treating apparatus has with lower member:
Inside has the container handling of the mounting table of mounting handled object;
Import the interior gas gatherer of described container handling handling gas;
Be connected with described gas gatherer, the centre is provided with flow control portion, to supply with the gas supply system of regulation gas;
Be connected with described container handling, the vacuum pumping system of the pressure control valve that the 1st vacuum pump and the 2nd vacuum pump and valve opening can set arbitrarily is set in the centre; And
Detect the pressure gauge of described container handling pressure,
Wherein, in the mode that gets around described pressure control valve and described the 2nd vacuum pump the bypass exhaust channel is set, simultaneously in described bypass exhaust channel Softstart valve means is set, its function is, alleviate in the described container handling when atmospheric pressure begins to vacuumize vacuum take out the impact that pressure produces; When carrying out the lower processing of processing pressure,, adjust the valve opening of described pressure control valve, control pressure in the described container handling with this according to described manometric detected value; And when carrying out the processing pressure high processing, stop to described pressure control valve one side exhaust, simultaneously, make described Softstart valve means remain on the state of low air capacity, and make the discharge gas stream through described bypass exhaust channel,
The processing that described processing pressure is lower is that film forming is handled, and described processing pressure high processing is cleaning treatment, oxidation processes or DIFFUSION TREATMENT.
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| JPH076962A (en) * | 1993-06-17 | 1995-01-10 | Fujitsu Ltd | Gas pressure control method and device |
| JPH0758032A (en) * | 1993-08-09 | 1995-03-03 | Hitachi Electron Eng Co Ltd | Apparatus and method for controlling pressure |
| US5488967A (en) * | 1993-10-27 | 1996-02-06 | Masako Kiyohara | Method and apparatus for feeding gas into a chamber |
| US5685912A (en) * | 1995-06-20 | 1997-11-11 | Sony Corporation | Pressure control system for semiconductor manufacturing equipment |
| JPH1011152A (en) * | 1996-06-26 | 1998-01-16 | Dainippon Screen Mfg Co Ltd | Vacuum exhaustion device of processor |
| JPH11333277A (en) * | 1998-03-25 | 1999-12-07 | Ckd Corp | Vacuum pressure control system |
| US6041814A (en) * | 1995-09-01 | 2000-03-28 | Ckd Corporation | Vacuum pressure control system |
| JP2000146096A (en) * | 1998-11-13 | 2000-05-26 | Kobe Steel Ltd | Introducing mechanism of fine amount of gas to very high vacuum chamber |
| JP2001295761A (en) * | 2000-04-11 | 2001-10-26 | Ebara Corp | Evacuation system |
-
2003
- 2003-11-10 CN CNB2003801002273A patent/CN100458629C/en not_active Expired - Fee Related
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH076962A (en) * | 1993-06-17 | 1995-01-10 | Fujitsu Ltd | Gas pressure control method and device |
| JPH0758032A (en) * | 1993-08-09 | 1995-03-03 | Hitachi Electron Eng Co Ltd | Apparatus and method for controlling pressure |
| US5488967A (en) * | 1993-10-27 | 1996-02-06 | Masako Kiyohara | Method and apparatus for feeding gas into a chamber |
| US5685912A (en) * | 1995-06-20 | 1997-11-11 | Sony Corporation | Pressure control system for semiconductor manufacturing equipment |
| US6041814A (en) * | 1995-09-01 | 2000-03-28 | Ckd Corporation | Vacuum pressure control system |
| JPH1011152A (en) * | 1996-06-26 | 1998-01-16 | Dainippon Screen Mfg Co Ltd | Vacuum exhaustion device of processor |
| JPH11333277A (en) * | 1998-03-25 | 1999-12-07 | Ckd Corp | Vacuum pressure control system |
| JP2000146096A (en) * | 1998-11-13 | 2000-05-26 | Kobe Steel Ltd | Introducing mechanism of fine amount of gas to very high vacuum chamber |
| JP2001295761A (en) * | 2000-04-11 | 2001-10-26 | Ebara Corp | Evacuation system |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104947081A (en) * | 2014-03-27 | 2015-09-30 | 东京毅力科创株式会社 | Film forming apparatus and film forming method |
| CN104947081B (en) * | 2014-03-27 | 2018-09-07 | 东京毅力科创株式会社 | Film formation device and film build method |
| CN109630446A (en) * | 2017-10-06 | 2019-04-16 | 株式会社岛津制作所 | Gas apparatus for predicting and vacuum pumping hardware |
| CN109630446B (en) * | 2017-10-06 | 2020-07-31 | 株式会社岛津制作所 | Gas estimation device and vacuum exhaust device |
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| Publication number | Publication date |
|---|---|
| CN1708739A (en) | 2005-12-14 |
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