CN104752152B - A kind of groove etching method and etching device - Google Patents
A kind of groove etching method and etching device Download PDFInfo
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- CN104752152B CN104752152B CN201310737928.3A CN201310737928A CN104752152B CN 104752152 B CN104752152 B CN 104752152B CN 201310737928 A CN201310737928 A CN 201310737928A CN 104752152 B CN104752152 B CN 104752152B
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
Abstract
The present invention provides a kind of groove etching method and etching device, for the etching groove in the substrate of wafer, from top to bottom deposition has the first mask layer and the second mask layer below first mask layer in the substrate of the wafer, wherein, groove etching method includes：S1, in first chamber by first mask layer and the second mask layer open, form preset pattern；S2, first mask layer is removed in second chamber, and the substrate of the wafer is etched to form the groove by the preset pattern.The present invention can overcome the problems, such as that cineration technics in the prior art is be easy to cause and be deposited on the byproduct of reaction of chamber wall and fall and lead to partial etching defect.
Description
Technical field
The present invention relates to field of semiconductor technology more particularly to a kind of groove etching methods and etching device.
Background technology
Nowadays, with the progress of production process of semiconductor, the requirement for etching defect is also higher and higher.Existing groove
Lithographic method is usually：Each sedimentary of wafer is performed etching after hard mask layer is opened, removed using cineration technics
Indefinite form carbon-coating later again carries out the substrate of wafer the etching of groove.Above-mentioned entire etching process is all in same etching cavity
In disposably complete.
However, with the progress of etching reaction, byproduct of reaction can be in chamber wall continuous deposition, and cineration technics is generally adopted
With the oxygen of elevated pressures, larger flow and zero-bias, in above-mentioned existing shallow trench lithographic method, when starting cineration technics
When, it is easy to it causes to be deposited on the byproduct of reaction on chamber wall and falls, and those byproducts of reaction are generally based on large scale,
Once falling obstructing of being etched caused by crystal column surface is, play the role of mask, so as to prevent the biography of normal etched features
It passs, partial etching defect is caused (as shown in Figure 1, byproduct of reaction particle 1 is fallen in the sedimentary of wafer, to block etching
The normal transmission of figure).
Invention content
In view of this, the purpose of the present invention is to provide a kind of groove etching method and etching devices, existing to solve
The problem of cineration technics be easy to cause Particulate Pollution and leads to partial etching defect in groove etching method.
To achieve the above object, the present invention provides a kind of groove etching method, for the etching groove in the substrate of wafer,
From top to bottom deposition has the first mask layer and the second mask layer below first mask layer in the substrate of the wafer,
The groove etching method includes：
S1, first mask layer and second mask layer are opened in first chamber, forms preset pattern；
S2, first mask layer is removed in second chamber, and the substrate of the wafer is etched by the preset pattern
To form the groove.
Preferably, the S1 includes：
S11, first mask layer is opened using the first etching gas, forms the preset pattern；
S12, second mask layer is opened using the second etching gas, forms the preset pattern.
Preferably, first mask layer is indefinite form carbon-coating, and first etching gas includes main gas and auxiliary gas,
The main gas of first etching gas includes oxygen, and the auxiliary gas of first etching gas includes inert gas.
Preferably, second mask layer is hard mask layer, and second etching gas includes main gas and auxiliary gas, institute
The main gas for stating the second etching gas includes CF4And/or CH2F2, the auxiliary gas of second etching gas includes oxygen and Ar
And/or the mixed gas of He.
Preferably, also deposition has anti-reflecting layer and the photoresist above the anti-reflecting layer above first mask layer
Layer, and the photoresist layer is formed as the preset pattern, is further included before the S11：
Using second etching gas anti-reflecting layer is opened by the preset pattern；
Also deposition has dielectric layer between the substrate of the wafer and second mask layer, is further included after the S12：
The dielectric layer is opened using second etching gas, forms the preset pattern.
Preferably, the S2 includes：
S21, first mask layer is removed using podzolic gas；
S22, the substrate of the wafer is etched to form the groove by the preset pattern using third etching gas.
Preferably, first mask layer is indefinite form carbon-coating, and the podzolic gas includes oxygen.
Preferably, the third etching gas includes main gas and auxiliary gas, the main gas packet of the third etching gas
HBr is included, the auxiliary gas of the third etching gas includes CI2、NF3、SF6、N2, in He any one or it is arbitrary a variety of mixed
Close gas.
Preferably, it is further included after the S1：The wafer is moved into the second chamber, cleans the first chamber
Byproduct of reaction on chamber wall.
Preferably, it is further included after the S2：The wafer is removed into the second chamber, cleans the second chamber
Byproduct of reaction on chamber wall.
Correspondingly, the present invention also provides a kind of etching devices, for the etching groove in the substrate of wafer, the wafer
From top to bottom deposition has the first mask layer and the second mask layer below first mask layer, the etching dress in substrate
It puts including first chamber and second chamber, the first chamber is used to beat first mask layer and second mask layer
It opens, forms preset pattern；
The second chamber presses the substrate that the preset pattern etches the wafer for removing first mask layer
To form the groove.
Preferably, the etching device further includes transmission cavity, and the transmission cavity is for connecting the first chamber and described
Second chamber, for the wafer to be transferred to the second chamber from the first chamber.
Preferably, be provided with the heating pedestal with function of temperature control in the first chamber, the heating pedestal for pair
The wafer heating.
The present invention carries out the etching process of groove point in two chambers, can be to avoid being deposited in mask layer opening procedure
It is fallen in the byproduct of reaction of chamber wall and partial etching defect is caused on wafer, meanwhile, the side etched using above-mentioned sub-chamber
Method is convenient for being cleared up respectively after two chambers complete corresponding technique, it can be ensured that chamber is clear in the original state of technique
Clean state, in addition, sub-chamber's etching can the specific etch step of more targeted accurate control, can preferably be carved
Lose effect.
Description of the drawings
Attached drawing is to be used to provide further understanding of the present invention, and a part for constitution instruction, with following tool
Body embodiment is used to explain the present invention, but be not construed as limiting the invention together.In the accompanying drawings：
Fig. 1 is partial etching defect exemplary plot in the prior art；
The groove etching method flow chart that Fig. 2 is provided by the embodiment of the present invention；
The groove etching method step S1 flow charts that Fig. 3 is provided by the embodiment of the present invention；
The groove etching method step S2 flow charts that Fig. 4 is provided by the embodiment of the present invention；
The wafer original state exemplary plot that Fig. 5 is provided by the embodiment of the present invention；
Wafer state exemplary plot after the completion first chamber technique that Fig. 6 is provided by the embodiment of the present invention；
Wafer state exemplary plot after the completion second chamber technique that Fig. 7 is provided by the embodiment of the present invention；
The etching device exemplary plot that Fig. 8 is provided by the embodiment of the present invention.
Reference sign
1- byproduct of reaction particles；101- photoresist layers；102- anti-reflecting layers；The first mask layers of 103-；The second masks of 104-
Layer；105- dielectric layers；106- substrates；10- first chambers；20- second chambers；30- transmission cavities.
Specific embodiment
The specific embodiment of the present invention is described in detail below in conjunction with attached drawing.It should be understood that this place is retouched
The specific embodiment stated is merely to illustrate and explain the present invention, and is not intended to restrict the invention.
As one aspect of the present invention, a kind of groove etching method is provided, for the etching groove in the substrate of wafer,
Wherein, from top to bottom deposition has the first mask layer and the second mask layer below first mask layer in the substrate of wafer.
As shown in Fig. 2, the groove etching method can include：
S1, in first chamber by the first mask layer and the second mask layer open, form preset pattern；
S2, the first mask layer is removed in second chamber, and the substrate of wafer is etched to form ditch by the preset pattern
Slot.
In existing groove etching method, entire etching process is all disposably completed in same etching cavity, due to carving
Byproduct of reaction during erosion can be deposited on chamber sidewall, and when removing corresponding mask layer using cineration technics, hold very much
It easily causes the byproduct of reaction being deposited on chamber wall to fall, partial etching defect may be caused.
In order to overcome the problems, such as this, the present invention carries out the etching process of groove point in two chambers, specifically, the
The opening of the first mask layer and the second mask layer is carried out in one chamber, later, wafer is transferred in second chamber and carries out first
The removal of mask layer, and the substrate of wafer is etched to form groove.Wherein, the first mask layer and the second mask layer is opened to refer to pair
First mask layer and the second mask layer etch notch to form preset pattern.This way it is possible to avoid in mask layer opening procedure,
The byproduct of reaction deposited on chamber wall falls and partial etching defect is caused on wafer, meanwhile, it is carved using above-mentioned sub-chamber
The method of erosion is convenient for being cleared up respectively after two chambers complete corresponding technique, it can be ensured that chamber is in the original state of technique
Be clean conditions, in addition, sub-chamber's etching can the specific etch step of more targeted accurate control, can obtain more
Good etching effect.
Further, as shown in figure 3, above-mentioned steps S1 can specifically include：
S11, the first mask layer is opened using the first etching gas, forms preset pattern；
S12, the second mask layer is opened using the second etching gas, forms preset pattern.
I.e., it is possible to it is carried out respectively using different etching gas according to the specific material of the first mask layer and the second mask layer
Etching.
Preferably, the first mask layer can be indefinite form carbon-coating, and the first etching gas can include oxygen.Specifically,
One etching gas can include main gas and auxiliary gas, wherein, main gas can include oxygen, and auxiliary gas can include indifferent gas
Body, it is preferable that auxiliary gas can include He, to obtain better etching effect, when being performed etching to indefinite form carbon-coating, main gas
The flow of body can be 50-150scm, and auxiliary gas flow can be 50-100scm, and radio-frequency power can be 400-700W, bias
Power can be 100-300W, and air pressure can be 3-8mt.It is understood that it above are only preferred reality provided by the present invention
Mode is applied, the first mask layer can carry out corresponding tune as needed for the sedimentary of other materials, the first etching gas
It is whole, the invention is not limited in this regard.
Preferably, the second mask layer can be hard mask layer, and the second etching gas includes CF4And/or CH2F2, wherein, firmly
Mask layer can be that silica or nitride deposition form.Specifically, the second etching gas can include main gas and auxiliary gas
Body, wherein, main gas can include CF4And/or CH2F2, mixed gas of the auxiliary gas including oxygen and Ar and/or He, main gas
The flow of body can be 50-350scm, and the flows of other gases in auxiliary gas except for oxygen can be 50-150scm, oxygen
Flow can be 5-30scm, when being performed etching to hard mask layer, radio-frequency power can be 400-700W, substrate bias power can
Think 100-300W, air pressure can be 3-10mt.It is understood that it above are only preferred implementation side provided by the present invention
Formula, the second mask layer can be as needed for the sedimentaries of other materials, and the second etching gas can carry out corresponding adjustment, this
Invention is not restricted this.
Further, anti-reflecting layer and photoresist layer can also have been deposited in the top of the first mask layer, and photoresist layer can
To be formed as preset pattern, further included before above-mentioned steps S11：Using the second etching gas antireflection is etched by preset pattern
Layer, i.e., perform etching according to the figure antagonistic reflex layer of photoresist layer；
In addition, dielectric layer can also have been deposited between the substrate of wafer and the second mask layer, also wrapped after above-mentioned steps S12
It includes：The dielectric layer is etched using second etching gas, forms the preset pattern.Specifically, dielectric layer can be by oxygen
SiClx or silicon carbide etc. deposit, due to the etching work of the etch technological condition and hard mask layer of anti-reflecting layer and dielectric layer
Skill condition is closer to, therefore can be performed etching using the second etching gas antagonistic reflex layer, parameter selection during etching
The etch process parameters of above-mentioned hard mask layer may be used.
Above-mentioned is the etching process in first chamber, it should be noted that each sedimentary is carried out in the first chamber
When etching is to obtain preset pattern, the duration of each etch step can be depending on the thickness of corresponding sedimentary, and the present invention is to this
It is not restricted.
After completing the etching technics to each sedimentary in the first chamber, the first mask layer can be removed in second chamber
And etch the substrate of wafer.
Specifically, as shown in figure 4, S2 can include：
S21, the first mask layer is removed using podzolic gas；
S22, the substrate of wafer is etched to form groove by preset pattern using third etching gas.
Preferably, the first mask layer can be indefinite form carbon-coating, and podzolic gas can be oxygen, you can be led to using oxygen
It crosses cineration technics and removes the first mask layer.Specifically, when removing the first mask layer by cineration technics using oxygen, radio frequency work(
Rate can be 700-1200W, and oxygen flow can be 200-500sccm, and air pressure can be 10-30mt.
In general, the material of wafer substrate is silicon, it is preferred that third etching gas can include HBr.Specifically,
Three etching gas can include main gas and auxiliary gas, and main gas can include HBr, and auxiliary gas can include CL2、NF3、SF6、
N2, any one or arbitrary a variety of mixed gas in He, when being performed etching using third etching gas to substrate, main gas
The flow of body can be 300-500sccm, and the flow of auxiliary gas is less than 50sccm.It is understood that it above are only the present invention
The preferred embodiment provided, substrate can carry out corresponding tune as needed for other materials, third etching gas
It is whole, the invention is not limited in this regard.
Above-mentioned is the description of etch step to being carried out by first chamber and second chamber, with reference to Fig. 5 to Fig. 7 institutes
Above-mentioned etch step is described further in example, wherein, Fig. 5 is the original state of wafer, in substrate 106 from top to bottom
Photoresist layer 101, anti-reflecting layer 102, the first mask layer 103, the second mask layer 104, dielectric layer 105 have been sequentially depositing, wherein, light
Resistance layer 101 is formed as preset pattern.
It in the first chamber, can be according to preset pattern antagonistic reflex layer 102 that photoresist layer 101 is formed, the first mask
The 103, second mask layer 104 of layer and dielectric layer 105 perform etching, and to open above-mentioned each sedimentary, form preset pattern, wherein,
The thickness of photoresist layer 101 and anti-reflecting layer 102 is usually relatively thin, can be consumed and be removed in etching process, therefore, completes the
Wafer as shown in Figure 6 can be obtained after technique in one chamber, wherein, the first mask layer 103, the second mask layer 104 and Jie
Matter layer 105 is opened and is formed as preset pattern.
In second chamber, can first using cineration technics remove the first mask layer 103, later can to substrate 106 into
Row etching after the technique for completing second chamber, can obtain wafer shown in Fig. 7 to form groove.
Further, after above-mentioned steps S1, can also include：Wafer is moved into second chamber, cleans the first chamber
Byproduct of reaction on the chamber wall of room.Specifically, it completes to the etching of each sedimentary to form default figure in the first chamber
After shape, wafer can be moved to second chamber to be ready for the correspondence technological process in second chamber, it later, can be to first
Byproduct of reaction on the chamber wall of chamber is cleaned, in this way, can cause when carrying out corresponding technique to next wafer,
First chamber is clean conditions.
Further, after above-mentioned steps S2, can also include：Wafer is removed into second chamber, cleans the second chamber
Byproduct of reaction on the chamber wall of room.Specifically, the removal to the first mask layer and groove are completed in the first chamber
After formation, wafer can be removed to second chamber, later, the byproduct of reaction on the chamber wall of second chamber can be carried out clear
It is clean, in this way, can so that second chamber is clean conditions when carrying out corresponding technique to next wafer.
It can be alternately to the cleaning of first chamber and second chamber, that is, corresponding work can be carried out in the first chamber
Second chamber is cleaned while skill；It after first chamber is transferred to second chamber, can be carried out in second chamber by wafer
First chamber is cleaned while corresponding technique.In this way, the efficiency of entire technological process can be improved.
It is above-mentioned when being cleaned to first chamber and second chamber, dry method cleaning may be used.Specifically, oxygen can be selected
Gas or SF6Or NF3Gases is waited to be cleaned, during cleaning, gas flow can be 20-300sccm, and radio-frequency power can be 300-
900W。
The groove etching method that the invention described above is provided can be used for groove etching depth can as needed depending on,
When needing to etch deeper groove, can extend in second chamber to the duration of the etch step of wafer substrate or
Repeat the etch step to wafer substrate, the invention is not limited in this regard.
The above-mentioned description to be carried out to groove etching method provided by the present invention, it can be seen that by the etched of groove
Journey point carries out in two chambers, can effectively overcome the big flow gas when removing the first mask layer, being passed through in the prior art
Fluid capacitance, which easily causes, is deposited on the problem of byproduct of reaction of chamber wall comes off.In addition, the above method is also convenient for completing corresponding work
Two chambers are cleaned respectively after skill, can ensure that two chambers are cleaning shape when carrying out corresponding technique to wafer
State.
Meanwhile carry out the etching process of groove point in two chambers, it can more precisely control.In general, to each
During sedimentary is performed etching to form figure, the size of the figure formed is more crucial, and the size of figure and temperature
It is larger to spend correlation, thus the heating pedestal with high temperature control ability can be set to realize in technical process in the first chamber
In accurate control to temperature；When performing etching the substrate of wafer to form groove, etching depth and etch topography more close
Key, thus the radio frequency system with high ability of regulation and control may be used to improve the uniformity of etching in second chamber.
As another aspect of the present invention, a kind of etching device is provided, for the etching groove in the substrate of wafer,
In, from top to bottom deposition has the first mask layer and the second mask layer below the first mask layer, the quarter in the substrate of wafer
Erosion device is used to implement the method that the invention described above is provided, specifically, as shown in figure 8, the etching device includes first chamber
10th, second chamber 20, wherein：
First chamber 10 is used to, by first mask layer and the second mask layer open, form preset pattern；
Second chamber 20 for removing first mask layer, and by the preset pattern etch the substrate of the wafer with
Form the groove.
Further, which can also include transmission cavity 30, which is used to connect first chamber
Room 10 and the second chamber 20, for the wafer to be transferred to the second chamber 20 from the first chamber 10.
Further, the heating pedestal with function of temperature control can be provided in first chamber 10, which can be with
For being heated to wafer and controlling heating temperature.
It is understood that the principle that embodiment of above is intended to be merely illustrative of the present and the exemplary implementation that uses
Mode, however the present invention is not limited thereto.For those skilled in the art, in the essence for not departing from the present invention
In the case of refreshing and essence, various changes and modifications can be made therein, these variations and modifications are also considered as protection scope of the present invention.
Claims (11)
1. a kind of groove etching method for the etching groove in the substrate of wafer, from top to bottom sinks in the substrate of the wafer
Product has the first mask layer and the second mask layer below first mask layer, which is characterized in that first mask layer
Top also deposits anti-reflecting layer and the photoresist layer above the anti-reflecting layer, and the photoresist layer is formed as default figure
Shape, also deposition has dielectric layer between the substrate of the wafer and second mask layer, and the groove etching method includes：
S1, first mask layer and second mask layer are opened in first chamber, forms preset pattern；
S2, first mask layer is removed in second chamber, and the substrate of the wafer is etched with shape by the preset pattern
Into the groove；
Wherein, the S1 includes：
S11 ', using the second etching gas the anti-reflecting layer is opened by the preset pattern；
S11, first mask layer is opened using the first etching gas, forms the preset pattern；
S12, second mask layer is opened using the second etching gas, forms the preset pattern；
S12 ', the dielectric layer is opened using second etching gas, forms the preset pattern.
2. groove etching method according to claim 1, which is characterized in that first mask layer is indefinite form carbon-coating,
First etching gas includes main gas and auxiliary gas, and the main gas of first etching gas includes oxygen, and described first
The auxiliary gas of etching gas includes inert gas.
3. groove etching method according to claim 1, which is characterized in that second mask layer be hard mask layer, institute
It states the second etching gas and includes main gas and auxiliary gas, the main gas of second etching gas includes CF4And/or CH2F2, institute
The auxiliary gas for stating the second etching gas includes the mixed gas of oxygen and Ar and/or He.
4. groove etching method according to claim 1, which is characterized in that the S2 includes：
S21, first mask layer is removed using podzolic gas；
S22, the substrate of the wafer is etched to form the groove by the preset pattern using third etching gas.
5. groove etching method according to claim 4, which is characterized in that first mask layer is indefinite form carbon-coating,
The podzolic gas includes oxygen.
6. groove etching method according to claim 4, which is characterized in that the third etching gas include main gas and
Auxiliary gas, the main gas of the third etching gas include HBr, and the auxiliary gas of the third etching gas includes CL2、NF3、
SF6、N2, any one or arbitrary a variety of mixed gas in He.
7. according to the groove etching method described in any one in claim 1-6, which is characterized in that also wrapped after the S1
It includes：The wafer is moved into the second chamber, cleans the byproduct of reaction on the chamber wall of the first chamber.
8. according to the groove etching method described in any one in claim 1-6, which is characterized in that also wrapped after the S2
It includes：The wafer is removed into the second chamber, cleans the byproduct of reaction on the chamber wall of the second chamber.
9. a kind of etching device, for the etching groove in the substrate of wafer, from top to bottom deposition has in the substrate of the wafer
First mask layer and the second mask layer below first mask layer, which is characterized in that above first mask layer
Also deposition has anti-reflecting layer and the photoresist layer above the anti-reflecting layer, and the photoresist layer is formed as preset pattern, institute
It states also to deposit between the substrate of wafer and second mask layer and has dielectric layer, the etching device includes first chamber and second
Chamber, the first chamber are used to open the anti-reflecting layer by preset pattern using the second etching gas, utilize the first etching
Gas opens first mask layer, forms the preset pattern, and second mask layer, shape are opened using the second etching gas
The dielectric layer is opened into the preset pattern and using second etching gas, forms the preset pattern；
The second chamber etches the substrate of the wafer with shape for removing first mask layer by the preset pattern
Into the groove.
10. etching device according to claim 9, which is characterized in that the etching device further includes transmission cavity, the biography
Defeated chamber is described for the wafer to be transferred to from the first chamber for connecting the first chamber and the second chamber
Second chamber.
11. etching device according to claim 9, which is characterized in that be provided in the first chamber with temperature control work(
The heating pedestal of energy, the heating pedestal are used to heat the wafer.
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| CN101593691A (en) * | 2008-05-26 | 2009-12-02 | 中芯国际集成电路制造(北京)有限公司 | The lithographic method of groove |
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| JPH0793348B2 (en) * | 1989-05-19 | 1995-10-09 | アプライド マテリアルズ インコーポレーテッド | Multi-chamber vacuum processing apparatus and multi-chamber vacuum semiconductor wafer processing apparatus |
| JP2644912B2 (en) * | 1990-08-29 | 1997-08-25 | 株式会社日立製作所 | Vacuum processing apparatus and operating method thereof |
| WO1996027899A1 (en) * | 1995-03-08 | 1996-09-12 | International Business Machines Corporation | Method for plasma etching an oxide/polycide structure |
| JPH11168086A (en) * | 1997-12-03 | 1999-06-22 | Matsushita Electric Ind Co Ltd | Equipment and method for substrate processing |
| US6214739B1 (en) * | 1999-02-05 | 2001-04-10 | Taiwan Semiconductor Manufacturing Company | Method of metal etching with in-situ plasma cleaning |
| US6358859B1 (en) * | 2000-05-26 | 2002-03-19 | Taiwan Semiconductor Manufacturing Company | HBr silicon etching process |
| CN100355015C (en) * | 2003-11-14 | 2007-12-12 | 茂德科技股份有限公司 | Reaction room treating method |
| US7829471B2 (en) * | 2005-07-29 | 2010-11-09 | Applied Materials, Inc. | Cluster tool and method for process integration in manufacturing of a photomask |
| KR100801308B1 (en) * | 2005-11-12 | 2008-02-11 | 주식회사 하이닉스반도체 | Method for forming trench using high selectivity hard mask and method for isolation of semiconductor device usnig the same |
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