CN104752152A - Groove etching method and etching device - Google Patents
Groove etching method and etching device Download PDFInfo
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- CN104752152A CN104752152A CN201310737928.3A CN201310737928A CN104752152A CN 104752152 A CN104752152 A CN 104752152A CN 201310737928 A CN201310737928 A CN 201310737928A CN 104752152 A CN104752152 A CN 104752152A
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
Abstract
The invention provides a groove etching method and an etching device, and the method and device are used for etching a groove on a substrate. A first mask layer and a second mask layer under the first mask layer are deposited on the substrate of a wafer from top to bottom. The groove etching method comprises the steps S1) the first mask layer and the second mask layer are opened in a first cavity to form a preset pattern; and S2) in a second cavity, the first mask layer is removed, and the wafer substrate is etched according to the preset pattern to form the groove. The groove etching method and the etching device can overcome the problem that in the prior art, reaction by-products deposited at the chamber wall tend to fall off due to the ashing technology and further cause etching defects partially.
Description
Technical field
The present invention relates to field of semiconductor technology, particularly relate to a kind of groove etching method and etching device.
Background technology
Nowadays, along with the progress of production process of semiconductor, the requirement for etching defect is also more and more higher.Existing groove etching method is generally: etch each sedimentary deposit of wafer until after hard mask layer is opened, and utilizes cineration technics to remove indefinite form carbon-coating, the substrate of wafer is carried out to the etching of groove afterwards again.Above-mentioned whole etching process is all disposable in same etching cavity to be completed.
But, along with the carrying out of etching reaction, byproduct of reaction can at chamber wall continuous deposition, and cineration technics generally adopts elevated pressures, compared with large discharge and the oxygen of zero-bias, in above-mentioned existing shallow trench lithographic method, when starting cineration technics, be easy to cause the byproduct of reaction be deposited on chamber wall to drop, and those byproducts of reaction are generally based on large scale, once dropping at crystal column surface is obstructing of the etching caused, play the effect of mask, thus stop the transmission of normal etched features, cause partial etching defect (as shown in Figure 1, byproduct of reaction particle 1 drops on the sedimentary deposit of wafer, block the normal delivery of etched features).
Summary of the invention
In view of this, the object of the present invention is to provide a kind of groove etching method and etching device, easily cause Particulate Pollution to solve cineration technics in existing groove etching method and cause the problem of partial etching defect.
For achieving the above object, the invention provides a kind of groove etching method, for etching groove in the substrate of wafer, the substrate of described wafer deposits the first mask layer from top to bottom and be positioned at the second mask layer below described first mask layer, described groove etching method comprises:
S1, in the first chamber, open described first mask layer and described second mask layer, form preset pattern;
S2, in the second chamber, remove described first mask layer, and the substrate etching described wafer by described preset pattern is to form described groove.
Preferably, described S1 comprises:
S11, utilize the first etching gas to open described first mask layer, form described preset pattern;
S12, utilize the second etching gas to open described second mask layer, form described preset pattern.
Preferably, described first mask layer is indefinite form carbon-coating, and described first etching gas comprises main gas and auxiliary gas, and the main gas of described first etching gas comprises oxygen, and the auxiliary gas of described first etching gas comprises inert gas.
Preferably, described second mask layer is hard mask layer, and described second etching gas comprises main gas and auxiliary gas, and the main gas of described second etching gas comprises CF
4and/or CH
2f
2, the auxiliary gas of described second etching gas comprises the mist of oxygen and Ar and/or He.
Preferably, also deposits anti-reflecting layer above described first mask layer and be positioned at the photoresist layer above described anti-reflecting layer, and described photoresist layer is formed as described preset pattern, also comprises before described S11:
Described second etching gas is utilized to open described anti-reflecting layer by described preset pattern;
Also deposit dielectric layer between the substrate of described wafer and described second mask layer, also comprise after described S12:
Utilize described second etching gas to open described dielectric layer, form described preset pattern.
Preferably, described S2 comprises:
S21, utilize podzolic gas remove described first mask layer;
S22, the 3rd etching gas is utilized to etch the substrate of described wafer by described preset pattern to form described groove.
Preferably, described first mask layer is indefinite form carbon-coating, and described podzolic gas comprises oxygen.
Preferably, described 3rd etching gas comprises main gas and auxiliary gas, and the main gas of described 3rd etching gas comprises HBr, and the auxiliary gas of described 3rd etching gas comprises CI
2, NF
3, SF
6, N
2, any one or mist multiple arbitrarily in He.
Preferably, also comprise after described S1: described wafer is moved to described second chamber, the byproduct of reaction on the chamber wall of clean described first chamber.
Preferably, also comprise after described S2: described wafer is shifted out described second chamber, the byproduct of reaction on the chamber wall of clean described second chamber.
Correspondingly, the present invention also provides a kind of etching device, for etching groove in the substrate of wafer, the substrate of described wafer deposits the first mask layer from top to bottom and be positioned at the second mask layer below described first mask layer, described etching device comprises the first chamber and the second chamber, described first chamber is used for described first mask layer and described second mask layer to open, and forms preset pattern;
Described second chamber is for removing described first mask layer, and the substrate etching described wafer by described preset pattern is to form described groove.
Preferably, described etching device also comprises transmission cavity, described transmission cavity for connecting described first chamber and described second chamber, for described wafer is passed to described second chamber from described first chamber.
Preferably, be provided with the heating base with function of temperature control in described first chamber, described heating base is used for described wafer heats.
The etching process of groove is divided and is carried out in two chambers by the present invention, the byproduct of reaction being deposited on chamber wall in mask layer opening procedure can be avoided to drop and to cause partial etching defect on wafer, simultaneously, the method adopting above-mentioned sub-chamber to etch is convenient to clear up respectively after two chambers complete corresponding technique, can guarantee that chamber is clean conditions in the initial condition of technique, in addition, sub-chamber's etching more accurately can control concrete etch step, can obtain better etching effect.
Accompanying drawing explanation
Accompanying drawing is used to provide a further understanding of the present invention, and forms a part for specification, is used from explanation the present invention, but is not construed as limiting the invention with embodiment one below.In the accompanying drawings:
Fig. 1 is part etching defect exemplary plot in prior art;
The groove etching method flow chart that Fig. 2 provides for the embodiment of the present invention;
The groove etching method step S1 flow chart that Fig. 3 provides for the embodiment of the present invention;
The groove etching method step S2 flow chart that Fig. 4 provides for the embodiment of the present invention;
The wafer initial condition exemplary plot that Fig. 5 provides for the embodiment of the present invention;
What Fig. 6 provided for the embodiment of the present invention completes wafer state exemplary plot after the first chamber processes;
What Fig. 7 provided for the embodiment of the present invention completes wafer state exemplary plot after the second chamber processes;
The etching device exemplary plot that Fig. 8 provides for the embodiment of the present invention.
Description of reference numerals
1-byproduct of reaction particle; 101-photoresist layer; 102-anti-reflecting layer; 103-first mask layer; 104-second mask layer; 105-dielectric layer; 106-substrate; 10-first chamber; 20-second chamber; 30-transmission cavity.
Embodiment
Below in conjunction with accompanying drawing, the specific embodiment of the present invention is described in detail.Should be understood that, embodiment described herein, only for instruction and explanation of the present invention, is not limited to the present invention.
As one aspect of the present invention, provide a kind of groove etching method, for etching groove in the substrate of wafer, wherein, the substrate of wafer deposits the first mask layer from top to bottom and be positioned at the second mask layer below this first mask layer.As shown in Figure 2, this groove etching method can comprise:
S1, in the first chamber, the first mask layer and the second mask layer to be opened, form preset pattern;
S2, in the second chamber, remove the first mask layer, and by the substrate of described preset pattern etching wafer to form groove.
In existing groove etching method, whole etching process is all disposable in same etching cavity to be completed, because the byproduct of reaction in etching process can be deposited on chamber sidewall, and when adopting cineration technics to remove corresponding mask layer, be easy to cause the byproduct of reaction be deposited on chamber wall to drop, partial etching defect may be caused.
In order to overcome this problem, the etching process of groove is divided and is carried out in two chambers by the present invention, particularly, carry out opening of the first mask layer and the second mask layer in the first chamber, afterwards, wafer is passed to the removal carrying out the first mask layer in the second chamber, and the substrate etching wafer is to form groove.Wherein, the first mask layer is opened and namely the second mask layer refers to etch breach to form preset pattern to the first mask layer and the second mask layer.Like this, can avoid in mask layer opening procedure, the byproduct of reaction that chamber wall deposits drops and cause partial etching defect on wafer, simultaneously, the method adopting above-mentioned sub-chamber to etch is convenient to clear up respectively after two chambers complete corresponding technique, can guarantee that chamber is clean conditions in the initial condition of technique, in addition, sub-chamber's etching more accurately can control concrete etch step, can obtain better etching effect.
Further, as shown in Figure 3, above-mentioned steps S1 specifically can comprise:
S11, utilize the first etching gas to open the first mask layer, form preset pattern;
S12, utilize the second etching gas to open the second mask layer, form preset pattern.
That is, different etching gas can be adopted to etch respectively according to the concrete material of the first mask layer and the second mask layer.
Preferably, the first mask layer can be indefinite form carbon-coating, and the first etching gas can comprise oxygen.Particularly, the first etching gas can comprise main gas and auxiliary gas, wherein, main gas can comprise oxygen, and auxiliary gas can comprise inert gas, preferably, auxiliary gas can comprise He, for obtaining better etching effect, when etching indefinite form carbon-coating, the flow of main gas can be 50-150scm, auxiliary gas flow can be 50-100scm, radio-frequency power can be 400-700W, and substrate bias power can be 100-300W, and air pressure can be 3-8mt.Be understandable that, above are only preferred implementation provided by the present invention, the first mask layer can be the sedimentary deposit of other material as required, and the first etching gas can carry out corresponding adjustment, and the present invention is not restricted this.
Preferably, the second mask layer can be hard mask layer, and the second etching gas comprises CF
4and/or CH
2f
2, wherein, hard mask layer can for silica or nitride deposition.Particularly, the second etching gas can comprise main gas and auxiliary gas, and wherein, main gas can comprise CF
4and/or CH
2f
2auxiliary gas comprises the mist of oxygen and Ar and/or He, the flow of main gas can be 50-350scm, in auxiliary gas, the flow of other gas except for oxygen can be 50-150scm, the flow of oxygen can be 5-30scm, and when etching hard mask layer, radio-frequency power can be 400-700W, substrate bias power can be 100-300W, and air pressure can be 3-10mt.Be understandable that, above are only preferred implementation provided by the present invention, the second mask layer can be the sedimentary deposit of other material as required, and the second etching gas can carry out corresponding adjustment, and the present invention is not restricted this.
Further, anti-reflecting layer and photoresist layer can also be deposited above the first mask layer, and photoresist layer can be formed as preset pattern, also comprise before above-mentioned steps S11: utilize the second etching gas to etch anti-reflecting layer by preset pattern, namely etch according to the figure antagonistic reflex layer of photoresist layer;
In addition, can also dielectric layer be deposited between the substrate of wafer and the second mask layer, also comprise after above-mentioned steps S12: utilize described second etching gas to etch described dielectric layer, form described preset pattern.Particularly, dielectric layer can be deposited by silica or carborundum etc. and form, due to anti-reflecting layer and the etch technological condition of dielectric layer and the etch technological condition of hard mask layer comparatively close, therefore the second etching gas antagonistic reflex layer can be utilized to etch, and Selecting parameter during etching also can adopt the etch process parameters of above-mentioned hard mask layer.
The above-mentioned etching process be in the first chamber, it should be noted that, when etching to obtain preset pattern to each sedimentary deposit in the first chamber, the duration of each etch step can be determined according to the thickness of corresponding sedimentary deposit, and the present invention is not restricted this.
After completing the etching technics to each sedimentary deposit in the first chamber, the first mask layer can be removed in the second chamber and etch the substrate of wafer.
Particularly, as shown in Figure 4, S2 can comprise:
S21, podzolic gas is utilized to remove the first mask layer;
S22, utilize the 3rd etching gas by preset pattern etching wafer substrate to form groove.
Preferably, the first mask layer can be indefinite form carbon-coating, and podzolic gas can be oxygen, and oxygen namely can be utilized to remove the first mask layer by cineration technics.Particularly, when utilizing oxygen to remove the first mask layer by cineration technics, radio-frequency power can be 700-1200W, and oxygen flow can be 200-500sccm, and air pressure can be 10-30mt.
Usually, the material of wafer substrate is silicon, and therefore preferably, the 3rd etching gas can comprise HBr.Particularly, the 3rd etching gas can comprise main gas and auxiliary gas, and main gas can comprise HBr, and auxiliary gas can comprise CI
2, NF
3, SF
6, N
2, any one or mist multiple arbitrarily in He, when utilizing the 3rd etching gas to etch substrate, the flow of main gas can be 300-500sccm, and the flow of auxiliary gas is less than 50sccm.Be understandable that, above are only preferred implementation provided by the present invention, substrate can be other material as required, and the 3rd etching gas can carry out corresponding adjustment, and the present invention is not restricted this.
Above-mentioned is the description to the etch step of being undertaken by the first chamber and the second chamber, below in conjunction with Fig. 5 to Fig. 7 example shown, above-mentioned etch step is described further, wherein, Fig. 5 is the initial condition of wafer, substrate 106 deposits successively photoresist layer 101, anti-reflecting layer 102, first mask layer 103, second mask layer 104, dielectric layer 105 from top to bottom, wherein, photoresist layer 101 is formed as preset pattern.
In the first chamber, preset pattern antagonistic reflex layer 102, first mask layer 103, second mask layer 104 that can be formed according to photoresist layer 101 and dielectric layer 105 etch, to open above-mentioned each sedimentary deposit, form preset pattern, wherein, the thickness of photoresist layer 101 and anti-reflecting layer 102 is usually thinner, can be consumed in etching process and be removed, therefore, wafer as shown in Figure 6 can be obtained after completing the technique in the first chamber, wherein, the first mask layer 103, second mask layer 104 and dielectric layer 105 are all opened and are formed as preset pattern.
In the second chamber, cineration technics first can be adopted to remove the first mask layer 103, can etch to form groove to substrate 106 afterwards, after completing the technique of the second chamber, the wafer shown in Fig. 7 can be obtained.
Further, after above-mentioned steps S1, can also comprise: wafer is moved to the second chamber, the byproduct of reaction on the chamber wall of clean first chamber.Particularly, complete in the first chamber the etching of each sedimentary deposit with after forming preset pattern, wafer can be moved to the second chamber to prepare the corresponding technological process carried out in the second chamber, afterwards, byproduct of reaction on the chamber wall of the first chamber can be cleaned, like this, can make when carrying out corresponding technique to next wafer, the first chamber is clean conditions.
Further, after above-mentioned steps S2, can also comprise: wafer is shifted out the second chamber, the byproduct of reaction on the chamber wall of clean second chamber.Particularly, complete after the removal of the first mask layer and the formation of groove in the first chamber, wafer can be shifted out the second chamber, afterwards, byproduct of reaction on the chamber wall of the second chamber can be cleaned, like this, can make when carrying out corresponding technique to next wafer, the second chamber is clean conditions.
Can hocket to the first chamber and the clean of the second chamber, that is, clean second chamber while corresponding technique can being carried out in the first chamber; Can after wafer be passed to the second chamber from the first chamber, clean first chamber carry out corresponding technique in the second chamber while.Like this, the efficiency of whole technological process can be improved.
Above-mentioned when carrying out clean to the first chamber and the second chamber, dry method can be adopted to clean.Particularly, oxygen or SF can be selected
6or NF
3clean Deng gas, during cleaning, gas flow can be 20-300sccm, and radio-frequency power can be 300-900W.
The etching depth that the groove etching method that the invention described above provides may be used for groove can be determined as required, when needing to etch darker groove, the duration of the etch step to wafer substrate can be extended in the second chamber, or the etch step repeated wafer substrate, the present invention is not restricted this.
The above-mentioned description for carrying out groove etching method provided by the present invention, can find out, the etching process of groove is divided and carries out in two chambers, can effectively overcome in prior art when removal the first mask layer, the problem that the large flow-rate gas stream passed into easily causes the byproduct of reaction being deposited on chamber wall to come off.In addition, said method is also convenient to clean two chambers respectively after completing corresponding technique, and can ensure when carrying out corresponding technique to wafer, two chambers are clean conditions.
Meanwhile, the etching process of groove is divided and carries out in two chambers, can more accurately control.Usually, etch to be formed in the process of figure to each sedimentary deposit, the size of the figure formed is comparatively crucial, and the size of figure and temperature dependency are comparatively large, thus can arrange in the first chamber there is high temperature control ability heating base to realize in technical process the accurate control of temperature; When etching to form groove to the substrate of wafer, etching depth and etch topography are comparatively crucial, and thus the second chamber can adopt the radio system with high ability of regulation and control to improve the uniformity of etching.
As another aspect of the present invention, a kind of etching device is provided, for etching groove in the substrate of wafer, wherein, the substrate of wafer deposit the first mask layer from top to bottom and be positioned at the second mask layer below the first mask layer, the method that this etching device provides for realizing the invention described above, particularly, as shown in Figure 8, this etching device comprises the first chamber 10, second chamber 20, wherein:
First chamber 10, for described first mask layer and described second mask layer being opened, forms preset pattern;
Second chamber 20 is for removing described first mask layer, and the substrate etching described wafer by described preset pattern is to form described groove.
Further, this etching device can also comprise transmission cavity 30, this transmission cavity 30 for connecting described first chamber 10 and described second chamber 20, for described wafer is passed to described second chamber 20 from described first chamber 10.
Further, can be provided with the heating base of band function of temperature control in the first chamber 10, this heating base may be used for heating wafer and controlling heating-up temperature.
Be understandable that, the illustrative embodiments that above execution mode is only used to principle of the present invention is described and adopts, but the present invention is not limited thereto.For those skilled in the art, without departing from the spirit and substance in the present invention, can make various modification and improvement, these modification and improvement are also considered as protection scope of the present invention.
Claims (13)
1. a groove etching method, for etching groove in the substrate of wafer, the substrate of described wafer deposits the first mask layer from top to bottom and be positioned at the second mask layer below described first mask layer, it is characterized in that, described groove etching method comprises:
S1, in the first chamber, open described first mask layer and described second mask layer, form preset pattern;
S2, in the second chamber, remove described first mask layer, and the substrate etching described wafer by described preset pattern is to form described groove.
2. groove etching method according to claim 1, is characterized in that, described S1 comprises:
S11, utilize the first etching gas to open described first mask layer, form described preset pattern;
S12, utilize the second etching gas to open described second mask layer, form described preset pattern.
3. groove etching method according to claim 2, it is characterized in that, described first mask layer is indefinite form carbon-coating, and described first etching gas comprises main gas and auxiliary gas, the main gas of described first etching gas comprises oxygen, and the auxiliary gas of described first etching gas comprises inert gas.
4. groove etching method according to claim 2, is characterized in that, described second mask layer is hard mask layer, and described second etching gas comprises main gas and auxiliary gas, and the main gas of described second etching gas comprises CF
4and/or CH
2f
2, the auxiliary gas of described second etching gas comprises the mist of oxygen and Ar and/or He.
5. groove etching method according to claim 2, it is characterized in that, also deposits anti-reflecting layer above described first mask layer and be positioned at the photoresist layer above described anti-reflecting layer, and described photoresist layer is formed as described preset pattern, also comprises before described S11:
Described second etching gas is utilized to open described anti-reflecting layer by described preset pattern;
Also deposit dielectric layer between the substrate of described wafer and described second mask layer, also comprise after described S12:
Utilize described second etching gas to open described dielectric layer, form described preset pattern.
6. groove etching method according to claim 1, is characterized in that, described S2 comprises:
S21, utilize podzolic gas remove described first mask layer;
S22, the 3rd etching gas is utilized to etch the substrate of described wafer by described preset pattern to form described groove.
7. groove etching method according to claim 6, is characterized in that, described first mask layer is indefinite form carbon-coating, and described podzolic gas comprises oxygen.
8. groove etching method according to claim 6, is characterized in that, described 3rd etching gas comprises main gas and auxiliary gas, and the main gas of described 3rd etching gas comprises HBr, and the auxiliary gas of described 3rd etching gas comprises CI
2, NF
3, SF
6, N
2, any one or mist multiple arbitrarily in He.
9. according to the groove etching method in claim 1-8 described in any one, it is characterized in that, also comprise after described S1: described wafer is moved to described second chamber, the byproduct of reaction on the chamber wall of clean described first chamber.
10. according to the groove etching method in claim 1-8 described in any one, it is characterized in that, also comprise after described S2: described wafer is shifted out described second chamber, the byproduct of reaction on the chamber wall of clean described second chamber.
11. 1 kinds of etching devices, for etching groove in the substrate of wafer, the substrate of described wafer deposits the first mask layer from top to bottom and be positioned at the second mask layer below described first mask layer, it is characterized in that, described etching device comprises the first chamber and the second chamber, described first chamber is used for described first mask layer and described second mask layer to open, and forms preset pattern;
Described second chamber is for removing described first mask layer, and the substrate etching described wafer by described preset pattern is to form described groove.
12. etching devices according to claim 11, it is characterized in that, described etching device also comprises transmission cavity, described transmission cavity for connecting described first chamber and described second chamber, for described wafer is passed to described second chamber from described first chamber.
13. etching devices according to claim 11, is characterized in that, are provided with the heating base with function of temperature control in described first chamber, and described heating base is used for described wafer heats.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310737928.3A CN104752152B (en) | 2013-12-29 | 2013-12-29 | A kind of groove etching method and etching device |
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|---|---|---|---|
| CN201310737928.3A CN104752152B (en) | 2013-12-29 | 2013-12-29 | A kind of groove etching method and etching device |
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| CN104752152B CN104752152B (en) | 2018-07-06 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111063616A (en) * | 2019-12-30 | 2020-04-24 | 广州粤芯半导体技术有限公司 | Groove forming method and etching equipment |
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| CN111063616A (en) * | 2019-12-30 | 2020-04-24 | 广州粤芯半导体技术有限公司 | Groove forming method and etching equipment |
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| CN104752152B (en) | 2018-07-06 |
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