CN104752152A - Groove etching method and etching device - Google Patents

Groove etching method and etching device Download PDF

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Publication number
CN104752152A
CN104752152A CN 201310737928 CN201310737928A CN104752152A CN 104752152 A CN104752152 A CN 104752152A CN 201310737928 CN201310737928 CN 201310737928 CN 201310737928 A CN201310737928 A CN 201310737928A CN 104752152 A CN104752152 A CN 104752152A
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etching
gas
chamber
mask layer
layer
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CN 201310737928
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CN104752152B (en )
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符雅丽
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北京北方微电子基地设备工艺研究中心有限责任公司
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    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes, e.g. for surface treatment of objects such as coating, plating, etching, sterilising or bringing about chemical reactions
    • HELECTRICITY
    • H01BASIC ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer, carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065Plasma etching; Reactive-ion etching

Abstract

The invention provides a groove etching method and an etching device, and the method and device are used for etching a groove on a substrate. A first mask layer and a second mask layer under the first mask layer are deposited on the substrate of a wafer from top to bottom. The groove etching method comprises the steps S1) the first mask layer and the second mask layer are opened in a first cavity to form a preset pattern; and S2) in a second cavity, the first mask layer is removed, and the wafer substrate is etched according to the preset pattern to form the groove. The groove etching method and the etching device can overcome the problem that in the prior art, reaction by-products deposited at the chamber wall tend to fall off due to the ashing technology and further cause etching defects partially.

Description

一种沟槽刻蚀方法及刻蚀装置 A trench-etching method and an etching apparatus

技术领域 FIELD

[0001] 本发明涉及半导体工艺领域,尤其涉及一种沟槽刻蚀方法及刻蚀装置。 [0001] The present invention relates to semiconductor processing, and more particularly, to a trench etching method and an etching apparatus.

背景技术 Background technique

[0002] 如今,随着半导体生产工艺的进步,对于刻蚀缺陷的要求也越来越高。 [0002] Now, with advances in semiconductor production process for etching defects are increasingly high requirements. 现有的沟槽刻蚀方法通常为:对晶圆的各沉积层进行刻蚀直至硬掩膜层被打开后,利用灰化工艺去除不定型碳层,之后再对晶圆的基底进行沟槽的刻蚀。 Conventional trench etching process generally as follows: for each deposited layer of the wafer is etched until the hard mask layer being opened by an ashing process removes the amorphous carbon layer, then the substrate is then wafer trenches etching. 上述整个刻蚀过程都在同一刻蚀腔室里一次性完成。 Throughout the etching process described above are performed in the same etch chamber disposable chamber.

[0003] 然而,随着刻蚀反应的进行,反应副产物会在腔室壁持续沉积,而灰化工艺一般采用较高压力、较大流量且零偏压的氧气,上述现有的浅沟槽刻蚀方法中,当开始灰化工艺时,很容易造成沉积在腔室壁上的反应副产物掉落,且该些反应副产物一般以大尺寸为主,一旦掉落在晶圆表面为造成的刻蚀的阻扰,起到掩膜的作用,从而阻止正常刻蚀图形的传递,造成部分刻蚀缺陷(如图1所示,反应副产物颗粒I掉落在晶圆的沉积层上,阻挡了刻蚀图形的正常传递)。 [0003] However, with the progress of the etching reaction, reaction byproducts will continue to be deposited in the chamber wall, and an ashing process generally use higher pressures, larger volume oxygen and zero bias, the conventional shallow groove etching method, when starting an ashing process, fall is likely to result in deposition of a byproduct of the reaction chamber wall, and the plurality of reaction byproducts in a large size ships mainly fall upon the wafer surface obstruction caused by the etching, mask functions, thereby preventing the normal transmission of the etched pattern, resulting in some defective etching (shown in figure 1, reaction byproducts I falling particles deposited layer on the wafer blocking normal pattern transfer etching).

发明内容 SUMMARY

[0004] 有鉴于此,本发明的目的在于提供一种沟槽刻蚀方法及刻蚀装置,以解决现有的沟槽刻蚀方法中灰化工艺容易造成颗粒物污染而导致部分刻蚀缺陷的问题。 [0004] In view of this, an object of the present invention is to provide a method and an etching trench etching apparatus, in order to solve the conventional trench etch ashing process is likely to cause particle contamination of the resulting partially etched defects problem.

[0005] 为实现上述目的,本发明提供一种沟槽刻蚀方法,用于在晶圆的基底上刻蚀沟槽,所述晶圆的基底上由上至下沉积有第一掩膜层和位于所述第一掩膜层下方的第二掩膜层,所述沟槽刻蚀方法包括: [0005] To achieve the above object, the present invention provides a trench etch process for etching a trench in the wafer substrate, from top to bottom with a first mask layer is deposited on the substrate wafer and the second mask layer located below the first mask layer, the trench etching method comprising:

[0006] S1、在第一腔室内打开所述第一掩膜层和所述第二掩膜层,形成预设图形; [0006] S1, opening the first mask layer and said second mask layer in a first chamber, a predetermined pattern is formed;

[0007] S2、在第二腔室内去除所述第一掩膜层,并按所述预设图形刻蚀所述晶圆的基底以形成所述沟槽。 [0007] S2, the second chamber of the first mask layer is removed, according to the preset pattern etching of the wafer substrate to form the trench.

[0008] 优选地,所述SI包括: [0008] Preferably, said SI comprising:

[0009] S11、利用第一刻蚀气体打开所述第一掩膜层,形成所述预设图形; [0009] S11, by using a first etching gas opens the first mask layer, the predetermined pattern is formed;

[0010] S12、利用第二刻蚀气体打开所述第二掩膜层,形成所述预设图形。 [0010] S12, using the second etching gas to open said second mask layer, the predetermined pattern is formed.

[0011] 优选地,所述第一掩膜层为不定型碳层,所述第一刻蚀气体包括主气体和辅气体,所述第一刻蚀气体的主气体包括氧气,所述第一刻蚀气体的辅气体包括惰性气体。 [0011] Preferably, the first mask layer is an amorphous carbon layer, the first etching gas includes a primary gas and secondary gas, the main gas in the first etching gas including oxygen, said first auxiliary gas etching gas comprises an inert gas.

[0012] 优选地,所述第二掩膜层为硬掩膜层,所述第二刻蚀气体包括主气体和辅气体,所述第二刻蚀气体的主气体包括CF4和/或CH2F2,所述第二刻蚀气体的辅气体包括氧气与Ar和/或He的混合气体。 [0012] Preferably, the second hard mask layer is a mask layer, the second etching gas includes a primary and a secondary gas a gas, the main gas in the second etching gas include CF4 and / or the CH2F2, the secondary gas in the second etching gas comprising a mixed gas of oxygen and Ar and / or He.

[0013] 优选地,所述第一掩膜层上方还沉积有抗反射层和位于所述抗反射层上方的光阻层,且所述光阻层形成为所述预设图形,所述Sll之前还包括: [0013] Preferably, the first mask layer is further deposited over the anti-reflective layer and a photoresist layer over the antireflective layer and the photoresist layer formed as a predetermined pattern, said Sll before further comprising:

[0014] 利用所述第二刻蚀气体按所述预设图形打开所述抗反射层; [0014] using the second etching gas to open the anti-reflective layer according to the preset pattern;

[0015] 所述晶圆的基底与所述第二掩膜层之间还沉积有介质层,所述S12之后还包括: [0015] The further dielectric layer is deposited between the wafer substrate and the second mask layer, after the S12 further comprises:

[0016] 利用所述第二刻蚀气体打开所述介质层,形成所述预设图形。 [0016] using the second etching gas to open said dielectric layer forming said predetermined pattern.

[0017] 优选地,所述S2包括: [0017] Preferably, the S2 comprising:

[0018] S21、利用灰化气体去除所述第一掩膜层; [0018] S21, ashing gas removing the first mask layer;

[0019] S22、利用第三刻蚀气体按所述预设图形刻蚀所述晶圆的基底以形成所述沟槽。 [0019] S22, using the third etching gas according to the preset pattern etching of the wafer substrate to form the trench.

[0020] 优选地,所述第一掩膜层为不定型碳层,所述灰化气体包括氧气。 [0020] Preferably, the first mask layer is an amorphous carbon layer, the ashing gas comprises oxygen.

[0021] 优选地,所述第三刻蚀气体包括主气体和辅气体,所述第三刻蚀气体的主气体包括HBr,所述第三刻蚀气体的辅气体包括CI2、NF3、SF6, N2, He中的任意一种或任意多种的混合气体。 [0021] Preferably, the third etching gas includes a primary gas and secondary gas, and the third etching gas from the gas main and auxiliary gas comprises HBr, the third etching gas comprises CI2, NF3, SF6, N2, He in any one or more of any of the mixed gas.

[0022] 优选地,所述SI之后还包括:将所述晶圆移至所述第二腔室,清洁所述第一腔室的腔室壁上的反应副产物。 [0022] Preferably, the SI after further comprising: said wafer are moved to said second chamber, said cleaning chamber wall by-product of the first reaction chamber.

[0023] 优选地,所述S2之后还包括:将所述晶圆移出所述第二腔室,清洁所述第二腔室的腔室壁上的反应副产物。 [0023] Preferably, the S2 after further comprising: said second chamber out of the wafer, the byproduct cleaning chamber wall of the second reaction chamber.

[0024] 相应地,本发明还提供一种刻蚀装置,用于在晶圆的基底上刻蚀沟槽,所述晶圆的基底上由上至下沉积有第一掩膜层和位于所述第一掩膜层下方的第二掩膜层,所述刻蚀装置包括第一腔室和第二腔室,所述第一腔室用于将所述第一掩膜层和所述第二掩膜层打开,形成预设图形; [0024] Accordingly, the present invention also provides an etching apparatus for etching a trench in the wafer substrate, the wafer substrate from top to bottom on the deposited layer, and the first mask said second mask layer beneath the first mask layer, the etching apparatus comprises a first chamber and a second chamber, the first chamber for the first mask layer and the two mask layer opening to form a predetermined pattern;

[0025] 所述第二腔室用于去除所述第一掩膜层,并按所述预设图形刻蚀所述晶圆的基底以形成所述沟槽。 [0025] the second chamber for removing said first mask layer, according to the preset pattern etching the wafer substrate to form the trench.

[0026] 优选地,所述刻蚀装置还包括传输腔,所述传输腔用于连接所述第一腔室和所述第二腔室,用于将所述晶圆从所述第一腔室传递至所述第二腔室。 [0026] Preferably, the etching apparatus further comprises a transmission chamber, a transport chamber for connecting said first chamber and the second chamber for the wafer from said first chamber chamber is transmitted to the second chamber.

[0027] 优选地,所述第一腔室内设置有具有温控功能的加热基座,所述加热基座用于对所述晶圆加热。 [0027] Preferably, the first chamber having a susceptor temperature control is provided with a heating function, heating the susceptor for heating the wafer.

[0028] 本发明将沟槽的刻蚀过程分在两个腔室中进行,可以避免掩膜层打开过程中沉积在腔室壁的反应副产物掉落在晶圆上造成部分刻蚀缺陷,同时,采用上述分腔室刻蚀的方法便于在两个腔室完成对应工艺后分别进行清理,能够确保腔室在工艺的初始状态均为清洁状态,此外,分腔室刻蚀能够更有针对性的精确控制具体的刻蚀步骤,可以得到更好的刻蚀效果。 [0028] The present invention is an etching process of the trenches points for the two chambers, the mask layer can be avoided during the reaction byproducts opened deposited on the chamber walls fall resulting partially etched wafer defects, Meanwhile, the above-chamber etching method facilitates cleaning after completion of each process corresponding to the two chambers, both chambers can be secured in a clean state of the initial state of the process, furthermore, it can be more sub-chamber for etching precise control of a particular etching step, the etching can get better results.

附图说明 BRIEF DESCRIPTION

[0029] 附图是用来提供对本发明的进一步理解,并且构成说明书的一部分,与下面的具体实施方式一起用于解释本发明,但并不构成对本发明的限制。 [0029] The drawings are provided for further understanding of the invention and constitute a part of this specification, the following detailed description serve to explain the embodiments of the present invention, but not limit the present invention. 在附图中: In the drawings:

[0030] 图1为现有技术中部分刻蚀缺陷不例图; [0030] FIG. 1 is a prior art embodiment of FIG partially etched defects;

[0031] 图2为本发明实施例所提供的沟槽刻蚀方法流程图; [0031] FIG 2 a trench etch method provided in the embodiment of the present invention, a flow chart;

[0032] 图3为本发明实施例所提供的沟槽刻蚀方法步骤SI流程图; [0032] Figure 3 embodiment a trench etch method provided in the present invention, a flowchart step SI;

[0033] 图4为本发明实施例所提供的沟槽刻蚀方法步骤S2流程图; [0033] The flowchart of FIG. 4 S2 trench etching step of a method embodiment of the invention;

[0034] 图5为本发明实施例所提供的晶圆初始状态示例图; [0034] The initial state of the wafer of FIG. 5 exemplary embodiment provided in FIG embodiment of the present invention;

[0035] 图6为本发明实施例所提供的完成第一腔室工艺后晶圆状态示例图; [0035] FIG 6 after completion of the first process chamber a wafer state diagram of the exemplary embodiment of the invention provided;

[0036] 图7为本发明实施例所提供的完成第二腔室工艺后晶圆状态示例图; [0036] FIG. 7 after the completion of the wafer process chambers of the second state diagram of the exemplary embodiment of the invention provided;

[0037] 图8为本发明实施例所提供的刻蚀装置示例图。 [0037] FIG 8 etching apparatus provided in the example embodiment of FIG embodiment of the present invention.

[0038] 附图标记说明 [0038] REFERENCE NUMERALS

[0039] 1-反应副产物颗粒;101-光阻层;102-抗反射层;103-第一掩膜层;104-第二掩膜层;105_介质层;106-基底;10-第一腔室;20_第二腔室;30_传输腔。 [0039] 1- particulate reaction by-products; photoresist layer 101; 102- antireflective layer; 103- first mask layer; 104- second mask layer; 105_ dielectric layer; 106- substrate; of 10- a chamber; a second chamber 20_; 30_ transfer chamber.

具体实施方式 detailed description

[0040] 以下结合附图对本发明的具体实施方式进行详细说明。 [0040] The following specific embodiments of the present invention will be described in detail in conjunction with the accompanying drawings. 应当理解的是,此处所描述的具体实施方式仅用于说明和解释本发明,并不用于限制本发明。 It should be understood that the specific embodiments described herein are only to illustrate and explain the present invention and are not intended to limit the present invention.

[0041] 作为本发明的一个方面,提供一种沟槽刻蚀方法,用于在晶圆的基底上刻蚀沟槽,其中,晶圆的基底上由上至下沉积有第一掩膜层和位于该第一掩膜层下方的第二掩膜层。 [0041] As one aspect of the present invention, there is provided a trench etching method for etching a trench in the wafer substrate, wherein, from top to bottom first mask layer is deposited on a wafer substrate and the first mask layer located below the second mask layer. 如图2所示,该沟槽刻蚀方法可以包括: 2, the trench etch method may include:

[0042] S1、在第一腔室内将第一掩膜层和第二掩膜层打开,形成预设图形; [0042] S1, a first chamber in the first mask layer and the second mask layer opening to form a predetermined pattern;

[0043] S2、在第二腔室内去除第一掩膜层,并按所述预设图形刻蚀晶圆的基底以形成沟槽。 [0043] S2, the second chamber is removed first mask layer, patterning the preset press the wafer substrate to form a trench.

[0044] 现有的沟槽刻蚀方法中,整个刻蚀过程都在同一刻蚀腔室内一次性完成,由于刻蚀过程中的反应副产物会沉积在腔室侧壁,而当采用灰化工艺去除对应的掩膜层时,很容易造成沉积在腔室壁上的反应副产物掉落,可能造成部分刻蚀缺陷。 [0044] The conventional trench etch process, the entire one-time etching process is performed in the same etch chamber, since the reaction byproducts will be deposited during etching of the sidewall of the chamber, and when using an ashing when the process corresponding to the mask layer is removed, depositing a fall is likely to result in by-product of the reaction chamber walls, can cause defects partially etched.

[0045] 为了克服这一问题,本发明将沟槽的刻蚀过程分在两个腔室中进行,具体地,在第一腔室中进行第一掩膜层和第二掩膜层的打开,之后,将晶圆传递至第二腔室中进行第一掩膜层的去除,并刻蚀晶圆的基底以形成沟槽。 [0045] To overcome this problem, the present invention is an etching process in the trench is divided in two chambers, specifically, a first mask layer and the second mask layer in the first chamber is opened Thereafter, the wafer is transferred to the removal of the first mask layer in a second chamber, and etching the wafer substrate to form a trench. 其中,打开第一掩膜层和第二掩膜层即指对第一掩膜层和第二掩膜层刻蚀出缺口以形成预设图形。 Wherein opening the first mask layer and the second referring to the mask layer and the first mask layer to etch the second mask layer to form a predetermined gap pattern. 这样,可以避免掩膜层打开过程中,在腔室壁上沉积的反应副产物掉落在晶圆上造成部分刻蚀缺陷,同时,采用上述分腔室刻蚀的方法便于在两个腔室完成对应工艺后分别进行清理,能够确保腔室在工艺的初始状态均为清洁状态,此外,分腔室刻蚀能够更有针对性的精确控制具体的刻蚀步骤,可以得到更好的刻蚀效果。 Thus, during the opening of the mask layer can be avoided, deposition on the chamber walls fall reaction byproducts on the wafer defects resulting partially etched, while using the above-chamber method facilitates etching in two chambers after completion of the cleaning, respectively corresponding to the process, the chamber can be secured in the initial state are clean state of the process, in addition, the etching chamber can be divided more targeted precisely controlled specific etching step, etching can be better effect.

[0046] 更进一步地,如图3所示,上述步骤SI具体可以包括: [0046] Further, as shown in FIG. 3, the above step SI may include:

[0047] S11、利用第一刻蚀气体打开第一掩膜层,形成预设图形; [0047] S11, the first etching gas using the first mask layer opening to form a predetermined pattern;

[0048] S12、利用第二刻蚀气体打开第二掩膜层,形成预设图形。 [0048] S12, the second etching gas using the second mask layer opening to form a predetermined pattern.

[0049] S卩,可以根据第一掩膜层和第二掩膜层的具体材质采用不同的刻蚀气体分别进行刻蚀。 [0049] S Jie, the etching gas may be different depending on the particular material of the first mask layer and the second mask layer are etched.

[0050] 优选地,第一掩膜层可以为不定型碳层,第一刻蚀气体可以包括氧气。 [0050] Preferably, the first mask layer may be amorphous carbon layer, the first etching gas may include oxygen. 具体地,第一刻蚀气体可以包括主气体和辅气体,其中,主气体可以包括氧气,辅气体可以包括惰性气体,优选地,辅气体可以包括He,为得到更好的刻蚀效果,在对不定型碳层进行刻蚀时,主气体的流量可以为50-150scm,辅气体流量可以为50_100scm,射频功率可以为400-700W,偏压功率可以为100-300W,气压可以为3-8mt。 Specifically, the first etching gas may include a primary gas and secondary gas, wherein the primary gas may include oxygen gas, the secondary gas may include an inert gas, preferably, the auxiliary gas may comprise He, in order to obtain better etching effect, when amorphous carbon layer is etched, the main gas flow rate may be 50-150scm, auxiliary gas flow rate may be 50_100scm, RF power can be 400-700W, the bias power may be 100-300W, pressure may be 3-8mt . 可以理解的是,上述仅为本发明所提供的优选实施方式,第一掩膜层可以根据需要为其它材质的沉积层,第一刻蚀气体可以进行对应的调整,本发明对此不作限制。 It will be appreciated that the above described preferred embodiment of the present invention is merely provided, the first mask layer may be a deposited layer of other material, a first etching gas may be adjusted as desired corresponding to the present invention is not limited to this.

[0051 ] 优选地,第二掩膜层可以为硬掩膜层,第二刻蚀气体包括CF4和/或CH2F2,其中,硬掩膜层可以为氧化硅或氮化硅沉积而成的。 [0051] Preferably, the second mask layer may include CF4 and / or CH2F2 hard mask layer, the second etching gas, wherein the hard mask layer may be a silicon oxide or nitride deposited by. 具体地,第二刻蚀气体可以包括主气体和辅气体,其中,主气体可以包括CF4和/或CH2F2,辅气体包括氧气以及Ar和/或He的混合气体,主气体的流量可以为50-350scm,辅气体中除氧气外的其它气体的流量可以为50-150scm,氧气的流量可以为5-30scm,在对硬掩膜层进行刻蚀时,射频功率可以为400-700W,偏压功率可以为100-300W,气压可以为3-10mt。 Specifically, the second etching gas may include a primary gas and secondary gas, wherein the primary gas can include CF4 and / or the CH2F2, auxiliary gas comprises oxygen, and a mixed gas of Ar or He and the flow rate / 50 main gas may be 350scm, auxiliary gas flow rate of other gases other than oxygen may 50-150scm, flow rate of oxygen may be 5-30scm, when the hard mask layer is etched, the RF power may be 400-700W, bias power can 100-300W, pressure can 3-10mt. 可以理解的是,上述仅为本发明所提供的优选实施方式,第二掩膜层可以根据需要为其它材质的沉积层,第二刻蚀气体可以进行对应的调整,本发明对此不作限制。 It will be appreciated that the above embodiments are only preferred embodiment of the present invention provides, as a second mask layer may be deposited layers of other materials, the second etching gas may be adjusted as desired corresponding to the present invention is not limited to this.

[0052] 更进一步地,在第一掩膜层的上方还可以沉积有抗反射层和光阻层,且光阻层可以形成为预设图形,上述步骤Sll之前还包括:利用第二刻蚀气体按预设图形刻蚀抗反射层,即按照光阻层的图形对抗反射层进行刻蚀; [0052] Further, over the first mask layer may also be deposited anti-reflection layer and a photoresist layer and the photoresist layer may be formed in a predetermined pattern, prior to said step Sll further comprising: using a second etching gas etching the antireflective layer according to a preset pattern, i.e., the anti-reflective layer in accordance with the pattern of the photoresist layer is etched;

[0053] 此外,晶圆的基底与第二掩膜层之间还可以沉积有介质层,上述步骤S12之后还包括:利用所述第二刻蚀气体刻蚀所述介质层,形成所述预设图形。 [0053] Further, between the wafer substrate and the second mask layer may also be deposited dielectric layer, the above-described step S12 after further comprising: using the second etching gas and etching the dielectric layer, the pre-formed design graphics. 具体地,介质层可以由氧化硅或碳化硅等沉积而成,由于抗反射层以及介质层的刻蚀工艺条件与硬掩膜层的刻蚀工艺条件较为接近,因此可以利用第二刻蚀气体对抗反射层进行刻蚀,刻蚀时的参数选择也可以采用上述硬掩膜层的刻蚀工艺参数。 In particular, dielectric layer may be deposited from silicon oxide or the like made of silicon carbide, since the etching process conditions for the etching process conditions and the dielectric layer, an antireflection layer and the hard mask layer is closer, with the second etching gas can be etching the anti-reflective layer, the parameters may be selected when the etching process etching the hard mask layer parameters employed.

[0054] 上述即为第一腔室中的刻蚀过程,需要说明的是,在第一腔室中对各沉积层进行刻蚀以得到预设图形时,各刻蚀步骤的时长可以根据对应沉积层的厚度而定,本发明对此不作限制。 [0054] The etching process is the first chamber, to be noted that, when each of the deposited layer is etched in a first chamber to obtain a predetermined pattern, the length of each etching step may correspond depending on the thickness of the deposited layer, the present invention is not limited to this.

[0055] 在第一腔室中完成对各沉积层的刻蚀工艺后,可以在第二腔室中去除第一掩膜层并刻蚀晶圆的基底。 After [0055] completion of the etching process for each layer deposited in the first chamber, the first mask layer may be removed in the second chamber and etching the wafer substrate.

[0056] 具体地,如图4所示,S2可以包括: [0056] Specifically, as shown in FIG. 4, S2 may include:

[0057] S21、利用灰化气体去除第一掩膜层; [0057] S21, the gas removal ashing the first mask layer;

[0058] S22、利用第三刻蚀气体按预设图形刻蚀晶圆的基底以形成沟槽。 [0058] S22, using the third etching gas according to a preset pattern etched wafer substrate to form a trench.

[0059] 优选地,第一掩膜层可以为不定型碳层,灰化气体可以为氧气,即可以利用氧气通过灰化工艺去除第一掩膜层。 [0059] Preferably, the first mask layer may be amorphous carbon layer, ashing gas may be oxygen, i.e., oxygen can be removed by using the first mask layer by an ashing process. 具体地,在利用氧气通过灰化工艺去除第一掩膜层时,射频功率可以为700-1200W,氧气流量可以为200-500sccm,气压可以为10_30mt。 Specifically, the first mask layer is removed by an ashing process using oxygen, RF power may be 700-1200W, the oxygen flow rate may be 200 to 500 sccm, the pressure may be 10_30mt.

[0060] 通常,晶圆基底的材质为硅,因此优选地,第三刻蚀气体可以包括HBr。 [0060] Generally, the substrate material is silicon wafer, and therefore preferably, the third etching gas may include HBr. 具体地,第三刻蚀气体可以包括主气体和辅气体,主气体可以包括HBr,辅气体可以包括CI2、NF3> SF6,N2, He中的任意一种或任意多种的混合气体,在利用第三刻蚀气体对基底进行刻蚀时,主气体的流量可以为300-500sCCm,辅气体的流量小于50sCCm。 Specifically, the third etching gas may include a primary gas and secondary gas, the main gas may include HBr, the secondary gas may include CI2, NF3> SF6, N2, any one or more of any of He gas mixture, using the third etching gas to etch the substrate, the flow rate of the main gas may be 300-500sCCm, the secondary gas flow rate is less than 50 sccm. 可以理解的是,上述仅为本发明所提供的优选实施方式,基底可以根据需要为其它材质,第三刻蚀气体可以进行对应的调整,本发明对此不作限制。 It will be appreciated that the above-described embodiment is only a preferred embodiment of the present invention is provided, the substrate can be other materials, the third etching gas may be adjusted as desired corresponding to the present invention is not limited to this.

[0061] 上述为对通过第一腔室和第二腔室进行的刻蚀步骤的描述,下面结合图5至图7所示示例对上述刻蚀步骤进行进一步描述,其中,图5为晶圆的初始状态,基底106上由上至下依次沉积有光阻层101、抗反射层102、第一掩膜层103、第二掩膜层104、介质层105,其中,光阻层101形成为预设图形。 [0061] The above-described etching step is performed by a first chamber and a second chamber, following the example shown in FIG. 5 to FIG. 7 in conjunction with the above-described etching step is further described, wherein a wafer of FIG. 5 in the initial state, the upper substrate 106 sequentially from top to bottom with a photoresist layer 101 is deposited, the antireflection layer 102, a first mask layer 103, the second mask layer 104, dielectric layer 105, wherein the photoresist layer 101 is formed default graphics.

[0062] 在第一腔室中,可以根据光阻层101所形成的预设图形对抗反射层102、第一掩膜层103、第二掩膜层104和介质层105进行刻蚀,以打开上述各沉积层,形成预设图形,其中,光阻层101和抗反射层102的厚度通常较薄,在刻蚀过程中会被消耗并被去除,因此,完成第一腔室中的工艺后可以得到如图6所示的晶圆,其中,第一掩膜层103、第二掩膜层104和介质层105均被打开并形成为预设图形。 [0062] In the first chamber, may be anti-reflective layer 102, a first mask layer 103 according to a preset pattern formed in photoresist layer 101, a second mask layer 104 and the dielectric layer 105 is etched to open each of the deposited layer, forming a predetermined pattern, wherein the thickness of the photoresist layer 101 and the antireflection layer 102 is typically thin, is consumed and removed during etching, and therefore, the process after the completion of the first chamber the wafer can be obtained as shown in FIG 6, wherein the first mask layer 103, the second mask layer 104 and the dielectric layer 105 are opened and a predetermined pattern is formed.

[0063] 在第二腔室中,可以先采用灰化工艺去除第一掩膜层103,之后可以对基底106进行刻蚀以形成沟槽,完成第二腔室的工艺后,可以得到图7所示的晶圆。 After [0063] In the second chamber, an ashing process may be employed to remove the first mask layer 103, the substrate can then be etched to form the trench 106, the second chamber to complete the process, FIG. 7 can be obtained wafer shown.

[0064] 更进一步地,在上述步骤SI之后,还可以包括:将晶圆移至第二腔室,清洁第一腔室的腔室壁上的反应副产物。 [0064] Still further, the SI after the above step, may further comprise: a wafer to a second chamber, the cleaning chamber wall by-product of the first reaction chamber. 具体地,在第一腔室中完成对各沉积层的刻蚀以形成预设图形后,可以将晶圆移至第二腔室以准备进行第二腔室中的对应工艺流程,之后,可以对第一腔室的腔室壁上的反应副产物进行清洁,这样,可以使得在对下一个晶圆进行对应工艺时,第一腔室为清洁状态。 Specifically, after completion of each deposited layer is etched to form a predetermined pattern, the wafer may be moved to the second chamber in preparation for the process corresponding to the second chamber in a first chamber, then, can be byproduct chamber wall of the first reaction chamber is cleaned, so, may be such that when the corresponding process is performed on the next wafer, the first chamber is a clean state.

[0065] 更进一步地,在上述步骤S2之后,还可以包括:将晶圆移出第二腔室,清洁第二腔室的腔室壁上的反应副产物。 [0065] Furthermore, after the step S2, it may further comprise: a wafer out of the second chamber, the cleaning chamber wall by-product of the second reaction chamber. 具体地,在第一腔室中完成对第一掩膜层的去除以及沟槽的形成后,可以将晶圆移出第二腔室,之后,可以对第二腔室的腔室壁上的反应副产物进行清洁,这样,可以使得在对下一个晶圆进行对应工艺时,第二腔室为清洁状态。 Specifically, after completion of forming a first mask layer is removed and the trench in the first chamber, the wafer may be moved out of the second chamber, then, may be reacted to the wall of the second chamber of the chamber cleaning-product, this way, at the time that the corresponding process on the next wafer, the second chamber is a clean state.

[0066] 对第一腔室和第二腔室的清洁可以交替进行,即,可以在第一腔室中进行对应工艺的同时清洁第二腔室;可以在将晶圆从第一腔室传递至第二腔室后,在第二腔室中进行对应工艺的同时清洁第一腔室。 [0066] The first cleaning chamber and the second chamber may be alternately performed, i.e., the corresponding process may be performed in a first chamber, while a second cleaning chamber; wafer may be transferred from the first chamber after to the second chamber, while the corresponding process performed in the second chamber in a first cleaning chamber. 这样,可以提高整个工艺流程的效率。 In this way, we can improve the efficiency of the entire process.

[0067] 上述对第一腔室和第二腔室进行清洁时,可以采用干法清洗。 [0067] when said first chamber and a second cleaning chamber, a dry cleaning may be employed. 具体地,可以选用氧气或SF6或NF3等气体进行清洗,清洗时,气体流量可以为20-300SCCm,射频功率可以为300-900W。 Specifically, the choice of oxygen or the like SF6, or NF3 gas washing, cleaning, gas flow may be 20-300 sccm, RF power may be 300-900W.

[0068] 上述本发明所提供的沟槽刻蚀方法可以用于沟槽的刻蚀深度可以根据需要而定,当需要刻蚀出较深的沟槽时,可以在第二腔室中延长对晶圆基底的刻蚀步骤的时长,或者重复对晶圆基底的刻蚀步骤,本发明对此不作限制。 [0068] The trench etch method of the present invention may be provided for the trench etching depth may be set as needed, when it is desired to etch deep trenches, can be extended to the second chamber long wafer substrate etching step, an etching step or repeated wafer substrate, the present invention is not limited to this.

[0069] 上述为对本发明所提供的沟槽刻蚀方法进行的描述,可以看出,将沟槽的刻蚀过程分在两个腔室中进行,能够有效克服现有技术中在去除第一掩膜层时,通入的大流量气流容易造成沉积在腔室壁的反应副产物脱落的问题。 [0069] The above is a description of a trench etch process of the present invention is provided can be seen, an etching process is divided in two groove chambers is performed, the prior art can be overcome in removing the first when the mask layer, into the large gas stream is likely to cause problems in the deposited reaction by-products off of the chamber walls. 此外,上述方法还便于在完成对应工艺后分别对两个腔室进行清洁,能够保证在对晶圆进行对应工艺时,两个腔室均为清洁状态。 Further, the above method were also facilitate cleaning of the two chambers after the completion of the corresponding process, to ensure that when the wafer is process corresponding to the two chambers are clean.

[0070] 同时,将沟槽的刻蚀过程分在两个腔室中进行,能够更加精确地控制。 [0070] Meanwhile, an etching process of the trenches points for the two chambers can be more precisely controlled. 通常,对各沉积层进行刻蚀以形成图形的过程中,所形成的图形的尺寸较为关键,而图形的尺寸和温度相关性较大,因而可以在第一腔室中设置具有高温控能力的加热基座以实现在工艺过程中对温度的精确控制;对晶圆的基底进行刻蚀以形成沟槽时,刻蚀深度和刻蚀形貌较为关键,因而第二腔室可以采用具有高调控能力的射频系统以改善刻蚀的均匀性。 Typically the process, each deposited layer is etched to form a pattern, the size of the formed pattern is more critical, and the pattern size and large temperature dependence, and therefore have a high temperature control capability may be provided in the first chamber the susceptor is heated in order to achieve precise control of the temperature during the process; when the wafer substrate is etched to form trenches, etching depth and etching topography is more critical, and therefore the second chamber can be employed having a high RF system control ability to improve the uniformity of etching.

[0071] 作为本发明的另一方面,提供一种刻蚀装置,用于在晶圆的基底上刻蚀沟槽,其中,晶圆的基底上由上至下沉积有第一掩膜层和位于第一掩膜层下方的第二掩膜层,该刻蚀装置用于实现上述本发明所提供的方法,具体地,如图8所示,该刻蚀装置包括第一腔室10、第二腔室20,其中: [0071] As another aspect of the present invention, there is provided an etching apparatus for etching a trench in the wafer substrate, wherein, from top to bottom first mask layer is deposited on a wafer substrate, and the second mask layer located below the first mask layer, the etching apparatus for implementing the method of the present invention provides, in particular, as shown in FIG. 8, the etching apparatus comprises a first chamber 10, a first second chamber 20, wherein:

[0072] 第一腔室10用于将所述第一掩膜层和所述第二掩膜层打开,形成预设图形; [0072] a first chamber 10 for the first mask layer and said second mask layer opening to form a predetermined pattern;

[0073] 第二腔室20用于去除所述第一掩膜层,并按所述预设图形刻蚀所述晶圆的基底以形成所述沟槽。 [0073] The second chamber 20 for removing the first mask layer, patterning the preset press of the wafer substrate to form the trench.

[0074] 更进一步地,该刻蚀装置还可以包括传输腔30,该传输腔30用于连接所述第一腔室10和所述第二腔室20,用于将所述晶圆从所述第一腔室10传递至所述第二腔室20。 [0074] Further, the etching apparatus may further include a transmission chamber 30, the transport chamber 30 for connecting the first chamber 10 and second chamber 20, for the wafers from the said first transfer chamber 10 to the second chamber 20.

[0075] 更进一步地,第一腔室10内可以设置有带温控功能的加热基座,该加热基座可以用于对晶圆进行加热并控制加热温度。 [0075] Further, the first chamber may be provided with a temperature control function was heated susceptor 10, the susceptor may be used for heating the wafer is heated and controlling the heating temperature.

[0076] 可以理解的是,以上实施方式仅仅是为了说明本发明的原理而采用的示例性实施方式,然而本发明并不局限于此。 [0076] It will be appreciated that the above embodiments are merely illustrative of the principles of the present invention is employed in an exemplary embodiment, but the present invention is not limited thereto. 对于本领域内的普通技术人员而言,在不脱离本发明的精神和实质的情况下,可以做出各种变型和改进,这些变型和改进也视为本发明的保护范围。 For those of ordinary skill in the art, without departing from the spirit and substance of the invention can be made various modifications and improvements, these modifications and improvements into the protection scope of the invention.

Claims (13)

  1. 1.一种沟槽刻蚀方法,用于在晶圆的基底上刻蚀沟槽,所述晶圆的基底上由上至下沉积有第一掩膜层和位于所述第一掩膜层下方的第二掩膜层,其特征在于,所述沟槽刻蚀方法包括: 51、在第一腔室内打开所述第一掩膜层和所述第二掩膜层,形成预设图形; 52、在第二腔室内去除所述第一掩膜层,并按所述预设图形刻蚀所述晶圆的基底以形成所述沟槽。 A trench etching process for etching a trench in the wafer substrate, the first mask layer is deposited from top to bottom and the first mask layer positioned on the wafer substrate beneath the second mask layer, wherein the trench etching method comprising: 51 to open the first mask layer and the second mask layer in a first chamber, a predetermined pattern is formed; 52, the second chamber of the first mask layer is removed, according to the preset pattern etching of the wafer substrate to form the trench.
  2. 2.根据权利要求1所述的沟槽刻蚀方法,其特征在于,所述SI包括: 511、利用第一刻蚀气体打开所述第一掩膜层,形成所述预设图形; 512、利用第二刻蚀气体打开所述第二掩膜层,形成所述预设图形。 The trench etch method according to claim 1, characterized in that, the SI includes: 511, using a first etching gas to open said first mask layer, the predetermined pattern is formed; 512, opening the second mask layer, the predetermined pattern is formed by the second etching gas.
  3. 3.根据权利要求2所述的沟槽刻蚀方法,其特征在于,所述第一掩膜层为不定型碳层,所述第一刻蚀气体包括主气体和辅气体,所述第一刻蚀气体的主气体包括氧气,所述第一刻蚀气体的辅气体包括惰性气体。 The trench etch method according to claim 2, wherein the first mask layer is a layer of amorphous carbon, the first etching gas includes a primary gas and secondary gas, said first main etching gas include oxygen gas, the auxiliary gas first etching gas comprises an inert gas.
  4. 4.根据权利要求2所述的沟槽刻蚀方法,其特征在于,所述第二掩膜层为硬掩膜层,所述第二刻蚀气体包括主气体和辅气体,所述第二刻蚀气体的主气体包括CF4和/或CH2F2,所述第二刻蚀气体的辅气体包括氧气与Ar和/或He的混合气体。 The trench etch method according to claim 2, wherein said second hard mask layer is a mask layer, the second etching gas includes a primary gas and secondary gas, the second main gas etching gas comprising CF4 and / or CH2F2, etching the second secondary gas comprising oxygen and Ar gas and / or a mixed gas of He.
  5. 5.根据权利要求2所述的沟槽刻蚀方法,其特征在于,所述第一掩膜层上方还沉积有抗反射层和位于所述抗反射层上方的光阻层,且所述光阻层形成为所述预设图形,所述Sll之前还包括: 利用所述第二刻蚀气体按所述预设图形打开所述抗反射层; 所述晶圆的基底与所述第二掩膜层之间还沉积有介质层,所述S12之后还包括: 利用所述第二刻蚀气体打开所述介质层,形成所述预设图形。 The trench etch method according to claim 2, wherein the first mask layer is further deposited over the anti-reflective layer and a photoresist layer over the antireflective layer, and the light the barrier layer is formed to a predetermined pattern, prior to the Sll further comprising: using the second etching gas according to the preset pattern opening the anti-reflective layer; said wafer substrate and said second mask further dielectric layer is deposited between the film layer, after the S12 further comprising: using the second etching gas to open said dielectric layer forming said predetermined pattern.
  6. 6.根据权利要求1所述的沟槽刻蚀方法,其特征在于,所述S2包括: 521、利用灰化气体去除所述第一掩膜层; 522、利用第三刻蚀气体按所述预设图形刻蚀所述晶圆的基底以形成所述沟槽。 The trench etch method according to claim 1, wherein said S2 comprising: 521, ashing gas removing the first mask layer; 522, by using the third etching gas etching a predetermined pattern of the wafer substrate to form the trench.
  7. 7.根据权利要求6所述的沟槽刻蚀方法,其特征在于,所述第一掩膜层为不定型碳层,所述灰化气体包括氧气。 7. A method of etching a trench according to claim 6, wherein the first mask layer is a layer of amorphous carbon, the ashing gas comprises oxygen.
  8. 8.根据权利要求6所述的沟槽刻蚀方法,其特征在于,所述第三刻蚀气体包括主气体和辅气体,所述第三刻蚀气体的主气体包括HBr,所述第三刻蚀气体的辅气体包括CI2、NF3>SF6> N2> He中的任意一种或任意多种的混合气体。 8. The trench etch method of claim 6, wherein the third etching gas includes a gas main and auxiliary gas, the main gas and the third etching gas comprising HBr, the third auxiliary gas etching gas comprises CI2, NF3> SF6> N2> He mixed gas of any one or more of any.
  9. 9.根据权利要求1-8中任意一项所述的沟槽刻蚀方法,其特征在于,所述SI之后还包括:将所述晶圆移至所述第二腔室,清洁所述第一腔室的腔室壁上的反应副产物。 9. The trench etching method according to any one of the 1-8 claims, characterized in that, after the SI further comprising: said wafer are moved to said second chamber, said first cleaning reaction byproducts on the chamber walls of a chamber.
  10. 10.根据权利要求1-8中任意一项所述的沟槽刻蚀方法,其特征在于,所述S2之后还包括:将所述晶圆移出所述第二腔室,清洁所述第二腔室的腔室壁上的反应副产物。 10. The trench etch method according to any one of the 1-8 claims, characterized in that, after the S2 further comprising: said wafer out of said second chamber, said second cleaning reaction byproducts on the chamber walls of the chamber.
  11. 11.一种刻蚀装置,用于在晶圆的基底上刻蚀沟槽,所述晶圆的基底上由上至下沉积有第一掩膜层和位于所述第一掩膜层下方的第二掩膜层,其特征在于,所述刻蚀装置包括第一腔室和第二腔室,所述第一腔室用于将所述第一掩膜层和所述第二掩膜层打开,形成预设图形; 所述第二腔室用于去除所述第一掩膜层,并按所述预设图形刻蚀所述晶圆的基底以形成所述沟槽。 An etching apparatus for etching a trench in the wafer substrate, from top to bottom is deposited below the first mask layer and said first mask layer positioned on the wafer substrate second mask layer, wherein the etching apparatus includes a first chamber and a second chamber, the first chamber for the first mask layer and said second mask layer opened to form a predetermined pattern; the second chamber for removing said first mask layer, according to the preset pattern etching the wafer substrate to form the trench.
  12. 12.根据权利要求11所述的刻蚀装置,其特征在于,所述刻蚀装置还包括传输腔,所述传输腔用于连接所述第一腔室和所述第二腔室,用于将所述晶圆从所述第一腔室传递至所述第二腔室。 12. The etching apparatus according to claim 11, wherein said etching apparatus further comprises a transmission chamber, the transmission chamber for connecting said first chamber and the second chamber, for the wafer is transferred from the first chamber to the second chamber.
  13. 13.根据权利要求11所述的刻蚀装置,其特征在于,所述第一腔室内设置有具有温控功能的加热基座,所述加热基座用于对所述晶圆加热。 13. The etching apparatus according to claim 11, wherein said first chamber is provided with a heating temperature control function having a susceptor, said susceptor for heating the heating the wafer.
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