CN100355015C - Reaction room treating method - Google Patents
Reaction room treating method Download PDFInfo
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- CN100355015C CN100355015C CNB200310116522XA CN200310116522A CN100355015C CN 100355015 C CN100355015 C CN 100355015C CN B200310116522X A CNB200310116522X A CN B200310116522XA CN 200310116522 A CN200310116522 A CN 200310116522A CN 100355015 C CN100355015 C CN 100355015C
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- China
- Prior art keywords
- reative cell
- processing procedure
- handled
- processing
- oxygen gas
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Lifetime
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- 238000000034 method Methods 0.000 title claims abstract description 106
- 238000006243 chemical reaction Methods 0.000 title abstract description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims abstract description 43
- CURLTUGMZLYLDI-UHFFFAOYSA-N Carbon dioxide Chemical compound O=C=O CURLTUGMZLYLDI-UHFFFAOYSA-N 0.000 claims abstract description 32
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical group [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 29
- 239000001569 carbon dioxide Substances 0.000 claims abstract description 16
- 229910002092 carbon dioxide Inorganic materials 0.000 claims abstract description 16
- 239000001301 oxygen Substances 0.000 claims abstract description 11
- 229910052760 oxygen Inorganic materials 0.000 claims abstract description 11
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims abstract description 10
- MYMOFIZGZYHOMD-UHFFFAOYSA-N Dioxygen Chemical compound O=O MYMOFIZGZYHOMD-UHFFFAOYSA-N 0.000 claims description 25
- 229910001882 dioxygen Inorganic materials 0.000 claims description 25
- 239000000377 silicon dioxide Substances 0.000 claims description 16
- 238000009931 pascalization Methods 0.000 claims 2
- 239000007789 gas Substances 0.000 abstract description 12
- 238000005530 etching Methods 0.000 abstract description 4
- 229910052814 silicon oxide Inorganic materials 0.000 abstract description 3
- 239000002002 slurry Substances 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 23
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 15
- 238000003672 processing method Methods 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 229910052731 fluorine Inorganic materials 0.000 description 10
- 125000001153 fluoro group Chemical group F* 0.000 description 10
- 239000010453 quartz Substances 0.000 description 8
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 5
- 239000004411 aluminium Substances 0.000 description 5
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 5
- 229920005591 polysilicon Polymers 0.000 description 5
- 239000000460 chlorine Substances 0.000 description 4
- 229920002120 photoresistant polymer Polymers 0.000 description 4
- 238000001020 plasma etching Methods 0.000 description 4
- 229910052801 chlorine Inorganic materials 0.000 description 3
- 238000011109 contamination Methods 0.000 description 3
- 238000000059 patterning Methods 0.000 description 3
- 239000000758 substrate Substances 0.000 description 3
- KZBUYRJDOAKODT-UHFFFAOYSA-N Chlorine Chemical compound ClCl KZBUYRJDOAKODT-UHFFFAOYSA-N 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000010790 dilution Methods 0.000 description 2
- 239000012895 dilution Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 238000009832 plasma treatment Methods 0.000 description 2
- SFZCNBIFKDRMGX-UHFFFAOYSA-N sulfur hexafluoride Chemical compound FS(F)(F)(F)(F)F SFZCNBIFKDRMGX-UHFFFAOYSA-N 0.000 description 2
- 229960000909 sulfur hexafluoride Drugs 0.000 description 2
- 229910000951 Aluminide Inorganic materials 0.000 description 1
- YCKRFDGAMUMZLT-UHFFFAOYSA-N Fluorine atom Chemical compound [F] YCKRFDGAMUMZLT-UHFFFAOYSA-N 0.000 description 1
- CPELXLSAUQHCOX-UHFFFAOYSA-N Hydrogen bromide Chemical compound Br CPELXLSAUQHCOX-UHFFFAOYSA-N 0.000 description 1
- 229910003902 SiCl 4 Inorganic materials 0.000 description 1
- KIZQXRZECBPKGP-UHFFFAOYSA-N [Si](F)(F)(F)F.[Cl] Chemical compound [Si](F)(F)(F)F.[Cl] KIZQXRZECBPKGP-UHFFFAOYSA-N 0.000 description 1
- 125000001246 bromo group Chemical group Br* 0.000 description 1
- 125000001309 chloro group Chemical group Cl* 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- 239000001307 helium Substances 0.000 description 1
- 229910052734 helium Inorganic materials 0.000 description 1
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 1
- 230000002262 irrigation Effects 0.000 description 1
- 238000003973 irrigation Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000002926 oxygen Chemical class 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 238000010926 purge Methods 0.000 description 1
- NHDHVHZZCFYRSB-UHFFFAOYSA-N pyriproxyfen Chemical compound C=1C=CC=NC=1OC(C)COC(C=C1)=CC=C1OC1=CC=CC=C1 NHDHVHZZCFYRSB-UHFFFAOYSA-N 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- ABTOQLMXBSRXSM-UHFFFAOYSA-N silicon tetrafluoride Chemical compound F[Si](F)(F)F ABTOQLMXBSRXSM-UHFFFAOYSA-N 0.000 description 1
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- Drying Of Semiconductors (AREA)
Abstract
The present invention relates to a method for processing a reaction chamber, which is suitable for processing carbon residues and silicon residues in the reaction chamber. The method comprises the following steps: injecting oxygen into the reaction chamber to carry out control programs of oxygen electric slurry processing in the reaction chamber, and respectively generating carbon dioxide gas and silicon oxide by the carbon residues and the silicon residues. Because the generated carbon dioxide gas can be exhausted from the reaction chamber and the silicon oxide can be adhered to the wall of the reaction chamber, the pollution of subsequent etching control programs suffered from the carbon residues and the silicon residues can be avoided.
Description
Technical field
The present invention relates to the method that a kind of reative cell is handled, particularly can be used for the method for carbon residue and the reative cell processing of silicon residue in the process chamber.
Background technology
In manufacture of semiconductor now, often use micro image etching procedure to form opening or irrigation canals and ditches.For instance, if when desiring in substrate to form deep trenches, then be prior to forming pad silicon oxide layer, polysilicon cover curtain material layer and patterning photoresist layer in the substrate in regular turn.Then, be etch mask with the patterning photoresist layer, carry out the plasma etching processing procedure, to form the polysilicon cover curtain layer of patterning.Then, after removing patterned light blockage layer, be etch mask with this polysilicon cover curtain layer, carry out the plasma etching processing procedure of another time, in substrate, form deep trenches.
Yet, in the process of plasma etching, the plasma gas ion is except the etched material layer of meeting bombardment (Bombard) institute desire, also might bombard as etch layer curtain rete (for example photoresist layer or polysilicon cover curtain layer), so can in reative cell, generate some carbon residues and silicon residue.If these carbon residues in the reative cell and silicon residue are not still proceeded the etch process of other wafers through processing suitably, then may make these residues drop to crystal column surface, and then cause problem such as wafer contamination.So after the etch process that carries out certain wafer number, carbon residue and silicon residue can become many gradually in the reative cell, just need handle reative cell this moment, to remove these carbon residues and silicon residue.
Fig. 1 represents a kind of generalized section of plasma-reaction-chamber.Please refer to Fig. 1, plasma-reaction-chamber 100 include aluminium material sidewall 102, be positioned at the quartz window (Quartz Window) 104 at top and the relevant components member (not shown) that some are relevant with plasma process.
Please continue with reference to Fig. 1, known a kind of carbon residue and silicon residue removed comprises following three steps with the method for process chamber 100.At first, in reative cell 100, carry out sulphur hexafluoride (SF
6)/chlorine (Cl
2)/oxygen (O
2) the plasma treatment processing procedure, so that the reaction of silicon residue generates tetrafluorosilane gas (SiF
4) and chlorine silicon fluoride gas (SiCl
4), and make the reaction of carbon residue generate carbon dioxide (CO
2), and the gas that above-mentioned reaction is generated is discharged outside the reative cell 100.But, in this step, the metallic aluminium on the sidewall 102 also may generate the fluorine aluminide with above-mentioned plasma gas reaction simultaneously.Wherein, this plasma processing time that processing procedure experienced is 70 seconds.Though above-mentioned carbon residue and silicon residue can be discharged reative cell 100 by the mode of reaction generation gas, but, because can sink into (Trap) from the fluorine atom of the part of sulphur hexafluoride is covered with in the aluminium material sidewall 102 in micropore hole 106, and the existence of these fluorine atoms can influence the etch process of wafer, and the following step that therefore must continue is removed.
Afterwards, carry out hydrogen bromide (HBr)/chlorine (Cl in the reative cell 100
2)/oxygen (O
2) the plasma treatment processing procedure, replace the fluorine atom that sinks in the micropore hole 106 to utilize chlorine atom and bromine atoms.Wherein, this plasma processing time that processing procedure experienced is 60 seconds.In this step, most fluorine atom can be discharged reative cell 100 by the mode that replaces, but still has the small amount of fluorine atom wherein remaining.Therefore, after above-mentioned steps, also can feed helium,, reduce the concentration of fluorine atom by this, and then reduce the influence of fluorine atom for the subsequent etch processing procedure so that fluorine atom still remaining in the reative cell 100 is discharged outside the reative cell 100.
Yet, though carbon residue and silicon residue that above-mentioned processing method can process chamber, but but can't remove fully, that is the fluorine atom of trace still can continue to remain in the reative cell, and the etch process of wafer is impacted handling the fluorine atom that processing procedure produced.In addition, if use above-mentioned method to come process chamber, after reative cell carries out the etch process of 2000～2500 wafer, just must handle reative cell once more, and the complex steps complexity of above-mentioned processing method, and the length that expends time in so will influence the output efficiency of wafer.
Summary of the invention
In view of this, purpose of the present invention is exactly in the method that provides a kind of reative cell to handle, with carbon residue in effective process chamber and silicon residue.
Another object of the present invention provides the method that a kind of reative cell is handled, and prolonging the blanking time that reative cell need be handled once more, and then improves the output efficiency of wafer.
The present invention proposes the method that a kind of reative cell is handled, and the method is carbon residue and the silicon residue that is applicable in the process chamber.The method is included in aerating oxygen in this reative cell, handles processing procedure to carry out oxygen gas plasma in this reative cell.Wherein, this oxygen gas plasma is handled processing procedure and is comprised that the oxygen gas plasma that carries out relatively high pressure in regular turn handles the oxygen gas plasma of processing procedure and relatively low pressure and handle processing procedure.And the oxygen gas plasma of this relatively high pressure is handled processing procedure can make carbon residue and silicon residue generate carbon dioxide and silica respectively, and the silica that is generated can be attached on the wall of reative cell.In addition, the oxygen gas plasma of the follow-up relatively low pressure that carries out processing processing procedure then can be so that carbon dioxide be discharged (Purge) reative cell.
Because the oxygen gas plasma of relatively high pressure that utilizes of the present invention is handled processing procedure, so that carbon residue and silicon residue generate carbon dioxide and silica respectively, and the silica that is generated can be attached on the wall of reative cell, and the carbon dioxide gas that is generated is known from experience the oxygen gas plasma processing processing procedure discharge reative cell by relatively low pressure.Therefore, can effectively avoid carbon residue and silicon residue being arranged, and cause wafer in follow-up etch process, to be subjected to pollution problems because of remaining in the reative cell.
In addition, the method that reative cell of the present invention is handled need not be carried out other replacements or dilution step again, and therefore compared to known processing method, the required step of carrying out is less, and therefore processing method of the present invention can be said so considerably easy.
In addition, utilize processing method of the present invention to come carbon residue and silicon residue in the process chamber, can prolong the blanking time that reative cell need be handled once more, and then improve the output efficiency of wafer.
For above-mentioned and other purposes of the present invention, feature and advantage can be become apparent, a preferred embodiment cited below particularly, and cooperate appended graphicly, be described in detail below:
Description of drawings
Fig. 1 is a kind of generalized section of plasma-reaction-chamber.
Fig. 2 is the flow chart of handling according to a kind of reative cell of preferred embodiment of the present invention.
Description of reference numerals
100: plasma-reaction-chamber
102: sidewall
104: quartz window
106: the micropore hole
200,202,204: step numbers
Embodiment
Because in the process of plasma etching, the plasma gas ion is except the etched material layer of meeting bombardment institute's desire, also might bombard as etch mask rete (for example photoresist layer or polysilicon cover curtain layer), so can in reative cell, generate some carbon residues and silicon residue.So, for fear of these residues the etch process of other wafers is caused the problem of wafer contamination, after the etch process that carries out some wafers, must carry out reative cell and handle processing procedure, to remove these carbon residues and silicon residue.Below be to propose a kind of carbon residue in the reative cell and method of silicon residue of removing, only the present invention is not limited to following disclosed content.
Flow chart shown in Figure 2, that this diagram is handled according to a kind of reative cell of preferred embodiment of the present invention.
Please be simultaneously with reference to Fig. 1 and 2, the method that reative cell of the present invention is handled is carbon residue and the silicon residue that is applicable in the process chamber 100.The method is prior to aerating oxygen (step 200) in the reative cell 100.Wherein this oxygen is to feed in the reative cell 100, so that be full of oxygen in the reative cell 100 with the condition of full flow.And for different etching machines, the size of its full flow is not quite similar, so it is to decide on the full flow condition of actual board design.
Then, in reative cell 100, carry out the oxygen gas plasma of relatively high pressure and handle processing procedure, so that carbon residue in the reative cell 100 and silicon residue respectively with oxygen reaction, and generate carbon dioxide and silica, wherein the silica that is generated can be attached on the wall of reative cell 100 (step 202).In preferred embodiment, the processing procedure power that the oxygen gas plasma of this relatively high pressure is handled processing procedure for example is that it is preferably 800W between 700 to 800W.And the time that processing procedure experienced for example is between 10 to 30 seconds, and it is preferably 20 seconds.In addition, the pressure of reative cell 1 00 for example is that it is preferably 50mT between 40 to 60mT at this moment.
And, the oxygen gas plasma of this relatively high pressure is handled the processing procedure chemical reaction of can saying so, so that carbon residue in the reative cell 100 and silicon residue are oxidized into carbon dioxide and silica, and the aluminium material sidewall 102 of reative cell also may generate aluminium oxide with oxygen reaction simultaneously, but similar to the aluminium material of reative cell sidewall 102 because of aluminium oxide, therefore the aluminium oxide that is generated can't cause negative influence.In addition, the silica that is generated on the sidewall 102 that may be attached to reative cell 100, also might be attached on the quartz window 104 at top of reative cell 100.But, because the material of quartz window 104 also is a silica, therefore can not influence quartz window 104 material characteristic originally.Therefore what deserves to be mentioned is that formed silica can be attached on the wall of reative cell 100 tightly, when proceeding the etch process of next wafer, this silica can not fall on the wafer, so can not cause problem such as wafer contamination.
Afterwards, carry out the oxygen gas plasma of relatively low pressure and handle processing procedure, so that carbon dioxide is discharged this reative cell 100 outer (step 204).In preferred embodiment, the processing procedure power that the oxygen gas plasma of this relatively low pressure is handled processing procedure for example is that it is preferably 800W between 700 to 800W.And the time that processing procedure experienced for example is between 10 to 30 seconds, and it is preferably 20 seconds.In addition, the pressure of reative cell 100 for example is that it is preferably 15mT between 10 to 25mT at this moment.
What deserves to be mentioned is, in step 204, except can also adjusting the internal pressure of reative cell 100 simultaneously so that gases such as carbon dioxide are discharged the reative cell 100, make its state that is in relatively low pressure, that is adjustment reative cell 100 makes it be in the etch process that wafer is carried out in preparation.And, can effectively solve the remaining problem that carbon residue and silicon residue are arranged in the reative cell 100 according to above-mentioned processing method.In addition, utilize above-mentioned processing method more can prolong the blanking time that reative cell need be handled once more, and then improve the output efficiency of wafer.In preferred embodiment, use processing method of the present invention can carry out after 4000～10000 the crystal round etching processing procedure, just need once more this reative cell to be handled.
In sum, the present invention has following advantage at least:
1. because the oxygen gas plasma of relatively high pressure that utilizes of the present invention is handled processing procedure, so that carbon residue and silicon residue generate carbon dioxide and silica respectively, and the silica that is generated can be attached on the wall of reative cell, and the carbon dioxide gas that is generated is known from experience the oxygen gas plasma processing processing procedure discharge reative cell by relatively low pressure.Therefore, can effectively avoid carbon residue and silicon residue being arranged, and cause wafer in follow-up etch process, to be subjected to pollution problems because of remaining in the reative cell.
2. the method that reative cell of the present invention is handled need not be carried out other replacements or dilution step again, therefore compared to known processing method, the required step of carrying out is less, and the required time of carrying out of each step also relatively lack (all less than 60 seconds), therefore processing method of the present invention can say so considerably easy with save time.
3. utilize processing method of the present invention, can prolong the blanking time that reative cell need be handled once more, and then improve the output efficiency of wafer.In other words, utilize method of the present invention, (for example: 4000～10000 wafer), again reative cell is carried out the processing processing procedure of another time can in reative cell, carry out behind the etch process of the wafer of multi-disc more.Therefore, the number of times of process chamber can reduce, and then the output efficiency of wafer also can obtain to improve.
4. the silica that utilizes processing method of the present invention and generated because it is consistent with the material of the quartz window of reactor top, therefore can not influence the material characteristic of the script of quartz window.In addition, though behind the oxygen gas plasma processing processing procedure through above-mentioned relatively high pressure, can generate aluminium oxide on the sidewall of reative cell,, the generation of this aluminium oxide can't impact follow-up etch process.
Though the present invention discloses as above with preferred embodiment; right its is not in order to limiting the present invention, anyly has the knack of this skill person, without departing from the spirit and scope of the present invention; when can doing a little change and retouching, so protection scope of the present invention is looked appending claims and is as the criterion.
Claims (9)
1. the method handled of a reative cell, this method is to be applicable to carbon residue and the silicon residue of handling in this reative cell, this method comprises:
In this reative cell with the mode aerating oxygen of full flow, handle processing procedure in this reative cell, to carry out oxygen gas plasma, and make this carbon residue and this silicon residue generate carbon dioxide and silica respectively, wherein this carbon dioxide is discharged this reative cell, and this silica can be attached on the wall of this reative cell.
2. the method that reative cell as claimed in claim 1 is handled, wherein this oxygen gas plasma is handled processing procedure and is comprised that the oxygen gas plasma that carries out relatively high pressure in regular turn handles the oxygen gas plasma of processing procedure and relatively low pressure and handle processing procedure.
3. the method that reative cell as claimed in claim 2 is handled, wherein the processing procedure power of the oxygen gas plasma of this relatively high pressure processing processing procedure is between 700 to 800W, the time that this processing procedure experienced is between 10 to 30 seconds, and the pressure of this reative cell is between 40 to 60mT.
4. the method that reative cell as claimed in claim 3 is handled, wherein the processing procedure power of the oxygen gas plasma of this relatively high pressure processing processing procedure is 800W, the time that this processing procedure experienced is 20 seconds, and the pressure of this reative cell is 50mT.
5. the method that reative cell as claimed in claim 2 is handled, wherein the processing procedure power of the oxygen gas plasma of this relatively low pressure processing processing procedure is between 700 to 800W, the time that this processing procedure experienced is between 10 to 30 seconds, and the pressure of this reative cell is between 10 to 25mT.
6. the method that reative cell as claimed in claim 5 is handled, wherein the processing procedure power of the oxygen gas plasma of this relatively low pressure processing processing procedure is 800W, the time that this processing procedure experienced is 20 seconds, and the pressure of this reative cell is 15mT.
7. the method that reative cell as claimed in claim 2 is handled, wherein this carbon dioxide is to handle processing procedure by the oxygen gas plasma of this relatively low pressure to discharge this reative cell.
8. the method that reative cell as claimed in claim 1 is handled, wherein the method for this reative cell processing is to carry out through after most wafer processing procedures in this reative cell.
9. the method that reative cell as claimed in claim 8 is handled, wherein the number of this wafer is between 4000 to 10000.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200310116522XA CN100355015C (en) | 2003-11-14 | 2003-11-14 | Reaction room treating method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CNB200310116522XA CN100355015C (en) | 2003-11-14 | 2003-11-14 | Reaction room treating method |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1617294A CN1617294A (en) | 2005-05-18 |
| CN100355015C true CN100355015C (en) | 2007-12-12 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CNB200310116522XA Expired - Lifetime CN100355015C (en) | 2003-11-14 | 2003-11-14 | Reaction room treating method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN100355015C (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN104752152B (en) * | 2013-12-29 | 2018-07-06 | 北京北方华创微电子装备有限公司 | A kind of groove etching method and etching device |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5356478A (en) * | 1992-06-22 | 1994-10-18 | Lam Research Corporation | Plasma cleaning method for removing residues in a plasma treatment chamber |
| US6440864B1 (en) * | 2000-06-30 | 2002-08-27 | Applied Materials Inc. | Substrate cleaning process |
| JP2003273086A (en) * | 2002-03-19 | 2003-09-26 | Matsushita Electric Ind Co Ltd | Dry etching method and semiconductor manufacturing equipment |
-
2003
- 2003-11-14 CN CNB200310116522XA patent/CN100355015C/en not_active Expired - Lifetime
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5356478A (en) * | 1992-06-22 | 1994-10-18 | Lam Research Corporation | Plasma cleaning method for removing residues in a plasma treatment chamber |
| US6440864B1 (en) * | 2000-06-30 | 2002-08-27 | Applied Materials Inc. | Substrate cleaning process |
| JP2003273086A (en) * | 2002-03-19 | 2003-09-26 | Matsushita Electric Ind Co Ltd | Dry etching method and semiconductor manufacturing equipment |
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| CN1617294A (en) | 2005-05-18 |
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