CN104752126A - S-waveband high-peak power klystron two-arm output device - Google Patents
S-waveband high-peak power klystron two-arm output device Download PDFInfo
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- CN104752126A CN104752126A CN201310743773.4A CN201310743773A CN104752126A CN 104752126 A CN104752126 A CN 104752126A CN 201310743773 A CN201310743773 A CN 201310743773A CN 104752126 A CN104752126 A CN 104752126A
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Abstract
The invention discloses an S-waveband high-peak power klystron two-arm output device. The device comprises an output cavity and a two-arm waveguide device, wherein the two-arm waveguide device comprises two same single-arm waveguide devices; the two same single-arm waveguide devices are symmetrically connected with the output cavity, respectively; each single-arm waveguide device comprises a first bent waveguide, a straight waveguide, a second waveguide assembly, an output window assembly and a second straight waveguide assembly, all of which are orderly connected from bottom to top. The S-waveband high-peak power klystron two-arm output device is simple and easy to implement; compared with other traditional single-arm output cavity, the two-arm output device is higher in working reliability and stability within the working frequency band under the condition of the same power level output.
Description
Technical field
The present invention relates to electron tube technical field, especially a kind of S-band high-peak power klystron both arms output device in microwave electron tube.
Background technology
In numerous microwave electron tubes, klystron is one wherein, and klystron belongs under vacuum conditions, utilizes charged particle to realize the vibration of microwave signal or a kind of electronic device of amplification at interelectrode motion process.Common klystron has high power, the feature such as high-gain and high efficiency, and along with the raising of klystron peak power, in output cavity, the high-frequency electric field in gap also increases thereupon, and the high frequency breakdown in gap becomes the principal element of restriction klystron peak power.In high-peak power klystron, puncturing and damaging of output window affects klystron reliability, stability and the key factor in life-span.Experiment shows, the types of damage of High power output window has three kinds: 1) dielectric fault causes ceramic window to be bored a hole, and causes sparking when window surface field intensity exceedes the dielectric strength of material; 2) the overheated window that causes of window bursts, and the thermal losses due to window causes the temperature difference of different parts, thus produces thermal stress, when thermal stress is greater than the bending strength of ceramic material, causes window to burst; 3) thermal stress of window and window frame weld causes output window to leak gas.
The present invention considers that to export peak power large, have employed both arms output loop, thus greatly reduces the power capacity of peak power to output window, make both arms output device have higher power capacity, functional reliability and stability higher.
Summary of the invention
The object of this invention is to provide a kind of S-band high-peak power klystron both arms output device, the present invention is simple, and under the condition that exports in same power level of both arms output device of the present invention, relative to other traditional single armed output cavity, the functional reliability in its working band and stability higher.
For achieving the above object, the present invention proposes a kind of design of S-band high-peak power klystron both arms output device, and this design comprises: 1) the high-frequency parameter design of output cavity, and wherein, what output cavity adopted is reentry type cylinder resonator; 2) design of output coupler, in addition, the circular waveguide of cell type output window and the mode conversion design of rectangular waveguide BJ26 meet the transmission characteristic in frequency band, thus can determine the size of the radius of circular waveguide.
A kind of S-band high-peak power klystron both arms output device that the present invention proposes comprises: output cavity and both arms waveguide assembly, wherein:
Described both arms waveguide assembly comprises two identical single armed waveguide assemblies, and these two single armed waveguide assemblies are connected with described output cavity symmetry respectively;
Each single armed waveguide assembly comprises the waveguide bend one, straight wave guide one, waveguide bend two assembly, output window assembly and straight wave guide two assembly that connect from bottom to up successively.
In the present invention, electron beam, through the current density modulation of buncher cavity, obtains the high-frequency current that modulation depth is very high, through output cavity gap, the radio-frequency field in electron beam and gap occurs to note ripple mutual effect, and its high-frequency energy produced exports from output coupler.The present invention is simple, and under the condition that exports in same power level of both arms output device of the present invention, relative to other traditional single armed output cavity, the functional reliability in its working band and stability higher.
Accompanying drawing explanation
Figure 1A is the side schematic view of both arms output device of the present invention;
Figure 1B is the generalized section of both arms output device of the present invention;
Fig. 2 A is the perspective view of output cavity of the present invention;
Fig. 2 B is the generalized section of output cavity of the present invention;
Fig. 3 A is the perspective view of waveguide bend one of the present invention;
Fig. 3 B is the generalized section of waveguide bend one of the present invention;
Fig. 3 C is the perspective view of waveguide bend two assembly of the present invention;
Fig. 3 D is the generalized section of waveguide bend two assembly of the present invention;
Fig. 4 A is the perspective view of straight wave guide one of the present invention;
Fig. 4 B is the generalized section of straight wave guide one of the present invention;
Fig. 5 A is the perspective view of output window assembly of the present invention;
Fig. 5 B is the generalized section of output window assembly of the present invention;
Fig. 6 A is cell type output window electrical component field distribution schematic diagram of the present invention;
Fig. 6 B is cell type output window assembly Distribution of Magnetic Field schematic diagram of the present invention;
Fig. 7 A is the perspective view of straight wave guide two assembly of the present invention;
Fig. 7 B is the generalized section of straight wave guide two assembly of the present invention.
Embodiment
For making the object, technical solutions and advantages of the present invention clearly understand, below in conjunction with specific embodiment, and with reference to accompanying drawing, the present invention is described in more detail.
There is the mutual effect of note ripple in the high-frequency electric field utilizing high-frequency electronic to note to respond in the gap of resonant cavity and electron beam, thus create energy exchange, along with the increase of power capacity, not only to consider the problem of withstand voltage in resonant cavity gap, also to consider the power capacity problem of output window simultaneously, based on these two kinds considerations, the present invention proposes a kind of S-band high-peak power klystron both arms output device improving power output capacity, the structure of this output device passes through electrical property design, engineering design, machining, the process implementations such as soldering and crunch seal technique, its output services pattern is TE
10square wave guided mode.
Fig. 1 is the structural representation of both arms output device of the present invention, wherein, Figure 1A is the side schematic view of both arms output device of the present invention, Figure 1B is the generalized section of both arms output device of the present invention, as shown in Figure 1, described S-band peak value klystron both arms output device comprises output cavity 1 and both arms waveguide assembly, described both arms waveguide assembly comprises two identical single armed waveguide assemblies, these two single armed waveguide assemblies are connected with described output cavity 1 symmetry respectively, form both arms waveguide export structure, each single armed waveguide assembly comprises the waveguide bend 1 connected from bottom to up successively, straight wave guide 1, waveguide bend two assembly 4, output window assembly 5 and straight wave guide two assembly 6, wherein:
Described output cavity 1 is positioned at this both arms output device bottom, its structure as shown in Figure 2, wherein, Fig. 2 A is the perspective view of described output cavity, Fig. 2 B is the generalized section of described output cavity, chamber, the side wall of described output cavity 1 has two symmetrical coupling apertures, the waveguide bend 1 installed with symmetry is respectively connected, described coupling aperture has solder bath at its connector place, to ensure that described output cavity 1 closely welds with described waveguide bend 1, described output cavity 1 is for extracting the microwave of high-peak power from electron beam, and be sent to corresponding waveguide bend 1 by the coupling aperture on the wall of chamber, side,
Wherein, described output cavity 1 is operated in S-band, its operating voltage and electric current are respectively 420kV and 520A, and the design of described output cavity 1 high-frequency parameter comprises: a) design of the resonance frequency of resonant cavity, characteristic impedance R/Q, gap coupling coefficient M and outer loading quality factor q; B) selection (i.e. the size of connector) of transit angle, gap, wherein, utilize PIC software can design the resonance frequency of output cavity 1, described output cavity 1 is reentry type cylindrical cavity, when keeping resonance frequency substantially constant, regulate that chamber diameter, chamber are high, the inner and outer diameter of drift tube and clearance distance, make M
2* when R/Q is maximum, the parameters such as the output cavity diameter after just can being optimized and chamber height, wherein, M is gap coupling coefficient, and R/Q is the characteristic impedance of output cavity; Two single armed waveguide assemblies respectively with the connection of output cavity 1 symmetry, the coupling between them realizes by offering coupling aperture on chamber, the side wall of output cavity 1, and the size of opening is relevant with the outer loading quality factor q of output cavity, is generally determined by bandwidth sum gain.
Described waveguide bend 1 connects with straight wave guide 1, and for transmitting microwave power, as shown in Figure 3, wherein, Fig. 3 A is the perspective view of described waveguide bend one to the structural representation of described waveguide bend 1, and Fig. 3 B is the generalized section of described waveguide bend one;
In an embodiment of the present invention, described waveguide bend 1 is formed by certain angle is bending by standard waveguide BJ26;
Described straight wave guide 1 is connected with waveguide bend two assembly 4, and for transmitting microwave power, as shown in Figure 4, wherein, Fig. 4 A is the perspective view of described straight wave guide one to the structural representation of described straight wave guide 1, and Fig. 4 B is the generalized section of described straight wave guide one;
In an embodiment of the present invention, described straight wave guide 1 is standard waveguide BJ26;
Described waveguide bend two assembly 4 is connected with the lower end of output window assembly 5, for transmitting microwave power, the structural representation of described waveguide bend two assembly 4 as shown in Figure 3, wherein, Fig. 3 C is the perspective view of described waveguide bend two assembly, and Fig. 3 D is the generalized section of described waveguide bend two assembly, as can be seen from the figure, the top of described waveguide bend two assembly 4 than described waveguide bend more than 1 round flanges, for being connected with the lower end of described output window assembly 5;
The top of described output window assembly 5 is connected with straight wave guide two assembly 6, for transmitting microwave power, Fig. 5 is the structural representation of described output window assembly 5, wherein, Fig. 5 A is the perspective view of described output window assembly, Fig. 5 B is the generalized section of described output window assembly, as shown in Figure 5, described output window assembly 5 is made up of ceramic window and the circular waveguide be centered around around ceramic window, in order to ensure the requirement of bandwidth of operation reflection coefficient, need select suitable window and calculate the position of window inside circular waveguide; In an embodiment of the present invention, described output window assembly 5 is cell type output window assembly, cell type output window is demand fulfillment standing-wave ratio coefficient requirements in working band, the Distribution of Magnetic Field of described cell type output window assembly 5 as shown in Figure 6, wherein, Fig. 6 A is the Electric Field Distribution schematic diagram of described cell type output window assembly 5, and Fig. 6 B is the Distribution of Magnetic Field schematic diagram of described cell type output window assembly 5;
The two ends of described straight wave guide two assembly 6 are separately installed with round flange and square flange, wherein, round flange is connected with output window assembly 5, square flange is connected with load, for by microwave power give described load, the structural representation of described straight wave guide two assembly 6 as shown in Figure 7, wherein, Fig. 7 A is the perspective view of described straight wave guide two assembly 6, and Fig. 7 B is the generalized section of described straight wave guide two assembly 6.
In order to reach the requirement of the standing-wave ratio in working band, present invention employs two sections of waveguide bends.During described both arms output device work, described output cavity 1 extracts the microwave of high-peak power from electron beam, and be sent to described waveguide bend 1 by the coupling aperture of chamber, side wall, successively after described straight wave guide 1 and output window assembly 5, microwave power is finally transferred to the load be connected with described straight wave guide two assembly 6, thus completes the transmission of high-peak power from output cavity to load.
Above-described specific embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; the foregoing is only specific embodiments of the invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.
Claims (10)
1. a S-band high-peak power klystron both arms output device, is characterized in that, this device comprises: output cavity and both arms waveguide assembly, wherein:
Described both arms waveguide assembly comprises two identical single armed waveguide assemblies, and these two single armed waveguide assemblies are connected with described output cavity symmetry respectively;
Each single armed waveguide assembly comprises the waveguide bend one, straight wave guide one, waveguide bend two assembly, output window assembly and straight wave guide two assembly that connect from bottom to up successively.
2. device according to claim 1, is characterized in that,
Described output cavity is positioned at this both arms output device bottom, for extracting the microwave of high-peak power from electron beam, and is sent to corresponding waveguide bend 1 by the coupling aperture on the wall of chamber, side;
Described waveguide bend one connects with straight wave guide one, for transmitting microwave power;
Described straight wave guide one is connected with waveguide bend two assembly, for transmitting microwave power;
Described waveguide bend two assembly is connected with the lower end of output window assembly, for transmitting microwave power;
The top of described output window assembly is connected with straight wave guide two assembly, for transmitting microwave power;
The two ends of described straight wave guide two assembly are separately installed with round flange and square flange, and wherein, round flange is connected with output window assembly, and square flange is connected with load, for giving described load by microwave power.
3. device according to claim 2, is characterized in that, described output cavity is operated in S-band, is reentry type cylindrical cavity.
4. device according to claim 2, is characterized in that, chamber, the side wall of described output cavity has two symmetrical coupling apertures, the waveguide bend one installed with symmetry is respectively connected.
5. device according to claim 4, is characterized in that, described coupling aperture has solder bath at its connector place, closely welds with described waveguide bend one to make described output cavity.
6. device according to claim 2, is characterized in that, described waveguide bend one is formed by certain angle is bending by standard waveguide.
7. device according to claim 2, is characterized in that, described straight wave guide one is standard waveguide.
8. device according to claim 2, is characterized in that, the top of described waveguide bend two assembly is provided with round flange, for being connected with the lower end of described output window assembly.
9. device according to claim 2, is characterized in that, described output window assembly is made up of ceramic window and the circular waveguide be centered around around ceramic window.
10. device according to claim 2, is characterized in that, described output window assembly is cell type output window assembly.
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| CN201310743773.4A CN104752126A (en) | 2013-12-30 | 2013-12-30 | S-waveband high-peak power klystron two-arm output device |
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| CN201310743773.4A CN104752126A (en) | 2013-12-30 | 2013-12-30 | S-waveband high-peak power klystron two-arm output device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109767963A (en) * | 2018-12-29 | 2019-05-17 | 中国电子科技集团公司第十二研究所 | A kind of klystron with waveguide bend structure |
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- 2013-12-30 CN CN201310743773.4A patent/CN104752126A/en active Pending
Non-Patent Citations (1)
| Title |
|---|
| 韩慧鹏，王勇,ET AL: ""速调管双耦合孔输出腔外观品质因数的计算"", 《真空科学与技术学报》 * |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109767963A (en) * | 2018-12-29 | 2019-05-17 | 中国电子科技集团公司第十二研究所 | A kind of klystron with waveguide bend structure |
| CN109767963B (en) * | 2018-12-29 | 2021-04-02 | 中国电子科技集团公司第十二研究所 | Klystron with bent waveguide structure |
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Application publication date: 20150701 |