CN104752126A - S-waveband high-peak power klystron two-arm output device - Google Patents
S-waveband high-peak power klystron two-arm output device Download PDFInfo
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Abstract
本发明公开了一种S波段双臂高峰值功率速调管双臂输出装置，该装置包括：输出腔和双臂波导装置，其中：双臂波导装置包括两个相同的单臂波导装置，这两个单臂波导装置分别与输出腔对称连接；每个单臂波导装置包括依次从下至上连接的弯波导一、直波导一、弯波导二组件、输出窗组件和直波导二组件。本发明简单易行，且本发明的双臂输出装置在同样功率电平输出的条件下，相对于其它传统单臂输出腔，其工作频带内的工作可靠性和稳定性更高。
The invention discloses an S-band dual-arm high-peak power klystron dual-arm output device, which comprises: an output cavity and a dual-arm waveguide device, wherein: the dual-arm waveguide device includes two identical single-arm waveguide devices, which The two single-arm waveguide devices are respectively symmetrically connected to the output cavity; each single-arm waveguide device includes a curved waveguide 1, a straight waveguide 1, a curved waveguide 2 assembly, an output window assembly, and a straight waveguide 2 assembly connected sequentially from bottom to top. The invention is simple and easy to implement, and under the same power level output condition, the double-arm output device of the invention has higher working reliability and stability in the working frequency band than other traditional single-arm output cavities.
Description
技术领域technical field
本发明涉及电真空器件技术领域，尤其是微波电真空器件中一种S波段高峰值功率速调管双臂输出装置。The invention relates to the technical field of electric vacuum devices, in particular to an S-band high peak power klystron double-arm output device in microwave electric vacuum devices.
背景技术Background technique
在众多的微波电真空器件中，速调管是其中的一种，速调管属于在真空状态下，利用带电粒子在电极间的运动过程实现微波信号的振荡或放大的一种电子器件。普通速调管具有高功率，高增益和高效率等特点，随着速调管峰值功率的提高，在输出谐振腔中，间隙的高频电场也随之增加，间隙的高频击穿成为限制速调管峰值功率的主要因素。在高峰值功率速调管中，输出窗的击穿和损坏是影响速调管可靠性、稳定性和寿命的重要因素。实验表明，高功率输出窗的损坏类型有三种：1）介电故障导致陶瓷窗片穿孔，当窗片表面电场强度超过材料的介电强度时引起打火；2）窗片过热导致窗片炸裂，由于窗片的热损耗造成不同部位的温度差，从而产生热应力，当热应力大于陶瓷材料的抗弯强度时，造成窗片炸裂；3）窗片和窗框焊接处的热应力引起输出窗漏气。Among the many microwave electric vacuum devices, the klystron is one of them. The klystron is an electronic device that uses the movement of charged particles between electrodes to realize the oscillation or amplification of microwave signals in a vacuum state. Ordinary klystrons have the characteristics of high power, high gain and high efficiency. As the peak power of the klystron increases, the high-frequency electric field of the gap in the output resonant cavity also increases, and the high-frequency breakdown of the gap becomes a limitation The main factor for klystron peak power. In high peak power klystrons, the breakdown and damage of the output window are important factors affecting the reliability, stability and life of the klystron. Experiments have shown that there are three types of damage to high-power output windows: 1) Dielectric faults lead to perforation of ceramic windows, which cause ignition when the electric field strength on the surface of the window exceeds the dielectric strength of the material; 2) Overheating of the window causes the window to burst , due to the temperature difference between different parts caused by the heat loss of the window, thermal stress is generated. When the thermal stress is greater than the bending strength of the ceramic material, the window will burst; 3) The thermal stress at the welding point of the window and the window frame causes the output The window is leaking.
本发明考虑到输出峰值功率大，采用了双臂输出回路，从而大大降低了峰值功率对输出窗的功率容量，使得双臂输出装置具有更高的功率容量，工作可靠性以及稳定性更高。Considering the large output peak power, the present invention adopts a dual-arm output circuit, thereby greatly reducing the power capacity of the peak power to the output window, so that the dual-arm output device has higher power capacity, higher working reliability and stability.
发明内容Contents of the invention
本发明的目的是提供一种S波段高峰值功率速调管双臂输出装置，本发明简单易行，且本发明的双臂输出装置在同样功率电平输出的条件下，相对于其它传统单臂输出腔，其工作频带内的工作可靠性和稳定性更高。The purpose of the present invention is to provide an S-band high peak power klystron dual-arm output device. The present invention is simple and easy to implement, and the dual-arm output device of the present invention is under the condition of the same power level output, compared with other traditional single-arm output devices. The arm output cavity has higher working reliability and stability in the working frequency band.
为实现上述目的，本发明提出一种S波段高峰值功率速调管双臂输出装置的设计，该设计包括：1）输出腔的高频参数设计，其中，输出腔采用的是重入式圆柱谐振腔；2）耦合输出装置的设计，另外，盒型输出窗的圆波导与矩形波导BJ26的模式变换设计满足频带内的传输特性，从而能够确定圆波导的半径的尺寸。In order to achieve the above purpose, the present invention proposes a design of an S-band high-peak power klystron dual-arm output device, which includes: 1) The high-frequency parameter design of the output cavity, wherein the output cavity is a reentrant cylinder Resonant cavity; 2) The design of the coupling output device. In addition, the mode conversion design of the box-shaped output window circular waveguide and rectangular waveguide BJ26 satisfies the transmission characteristics in the frequency band, so that the radius of the circular waveguide can be determined.
本发明提出的一种S波段高峰值功率速调管双臂输出装置包括：输出腔和双臂波导装置，其中：An S-band high peak power klystron dual-arm output device proposed by the present invention includes: an output cavity and a dual-arm waveguide device, wherein:
所述双臂波导装置包括两个相同的单臂波导装置，这两个单臂波导装置分别与所述输出腔对称连接；The dual-arm waveguide device includes two identical single-arm waveguide devices, and the two single-arm waveguide devices are respectively symmetrically connected to the output cavity;
每个单臂波导装置包括依次从下至上连接的弯波导一、直波导一、弯波导二组件、输出窗组件和直波导二组件。Each single-arm waveguide device includes a curved waveguide 1, a straight waveguide 1, a curved waveguide 2 assembly, an output window assembly, and a straight waveguide 2 assembly connected sequentially from bottom to top.
在本发明中，电子注经过群聚谐振腔的电流密度调制，获得了调制深度很高的高频电流，在经过输出腔间隙时，电子注与间隙的高频场发生注波互作用，其产生的高频能量从耦合输出装置输出。本发明简单易行，且本发明的双臂输出装置在同样功率电平输出的条件下，相对于其它传统单臂输出腔，其工作频带内的工作可靠性和稳定性更高。In the present invention, the electron beam is modulated by the current density of the cluster resonant cavity to obtain a high-frequency current with a high modulation depth. When passing through the output cavity gap, the electron beam interacts with the high-frequency field of the gap, and its The generated high-frequency energy is output from the coupling output device. The invention is simple and easy to implement, and under the same power level output condition, the double-arm output device of the invention has higher working reliability and stability in the working frequency band than other traditional single-arm output cavities.
附图说明Description of drawings
图1A是本发明双臂输出装置的侧面示意图；Fig. 1A is a schematic side view of the dual-arm output device of the present invention;
图1B是本发明双臂输出装置的剖面示意图；Fig. 1B is a schematic cross-sectional view of the dual-arm output device of the present invention;
图2A是本发明输出腔的立体结构示意图；Fig. 2A is a schematic diagram of the three-dimensional structure of the output chamber of the present invention;
图2B是本发明输出腔的剖面示意图；Fig. 2B is a schematic cross-sectional view of the output cavity of the present invention;
图3A是本发明弯波导一的立体结构示意图；FIG. 3A is a schematic diagram of a three-dimensional structure of a curved waveguide 1 of the present invention;
图3B是本发明弯波导一的剖面示意图；3B is a schematic cross-sectional view of a curved waveguide 1 of the present invention;
图3C是本发明弯波导二组件的立体结构示意图；3C is a schematic diagram of the three-dimensional structure of the second component of the curved waveguide of the present invention;
图3D是本发明弯波导二组件的剖面示意图；Fig. 3D is a schematic cross-sectional view of the second component of the curved waveguide of the present invention;
图4A是本发明直波导一的立体结构示意图；4A is a schematic diagram of a three-dimensional structure of a straight waveguide 1 of the present invention;
图4B是本发明直波导一的剖面示意图；4B is a schematic cross-sectional view of a straight waveguide 1 of the present invention;
图5A是本发明输出窗组件的立体结构示意图；Fig. 5A is a schematic diagram of the three-dimensional structure of the output window assembly of the present invention;
图5B是本发明输出窗组件的剖面示意图；5B is a schematic cross-sectional view of the output window assembly of the present invention;
图6A是本发明盒型输出窗组件电场分布示意图；6A is a schematic diagram of the electric field distribution of the box-type output window assembly of the present invention;
图6B是本发明盒型输出窗组件磁场分布示意图；6B is a schematic diagram of the magnetic field distribution of the box-shaped output window assembly of the present invention;
图7A是本发明直波导二组件的立体结构示意图；Fig. 7A is a schematic diagram of the three-dimensional structure of the two components of the straight waveguide of the present invention;
图7B是本发明直波导二组件的剖面示意图。Fig. 7B is a schematic cross-sectional view of two straight waveguide components of the present invention.
具体实施方式Detailed ways
为使本发明的目的、技术方案和优点更加清楚明白，以下结合具体实施例，并参照附图，对本发明进一步详细说明。In order to make the object, technical solution and advantages of the present invention clearer, the present invention will be described in further detail below in conjunction with specific embodiments and with reference to the accompanying drawings.
利用高频电子注在谐振腔的间隙感应的高频电场和电子注发生注波互作用，从而产生了能量交换，随着功率容量的增加，不但要考虑谐振腔间隙的耐压问题，同时也要考虑输出窗的功率容量问题，基于这两种考虑，本发明提出一种提高输出功率容量的S波段高峰值功率速调管双臂输出装置，该输出装置的结构是通过电性能设计、工程设计、机械加工、钎焊和陶瓷封接工艺等过程实现的，其输出工作模式是TE10矩形波导模。The high-frequency electric field induced by the high-frequency electron beam in the gap of the resonant cavity interacts with the electron beam to generate energy exchange. With the increase of power capacity, not only the withstand voltage of the gap of the resonant cavity must be considered, but also The power capacity problem of the output window should be considered. Based on these two considerations, the present invention proposes an S-band high-peak power klystron dual-arm output device that improves the output power capacity. The structure of the output device is through electrical performance design, engineering Design, machining, brazing and ceramic sealing processes and other processes, and its output working mode is TE 10 rectangular waveguide mode.
图1是本发明双臂输出装置的结构示意图，其中，图1A是本发明双臂输出装置的侧面示意图，图1B是本发明双臂输出装置的剖面示意图，如图1所示，所述S波段高峰值速调管双臂输出装置包括输出腔1和双臂波导装置，所述双臂波导装置包括两个相同的单臂波导装置，这两个单臂波导装置分别与所述输出腔1对称连接，形成双臂波导输出结构，每个单臂波导装置包括依次从下至上连接的弯波导一2、直波导一3、弯波导二组件4、输出窗组件5和直波导二组件6，其中：Fig. 1 is a schematic structural view of the dual-arm output device of the present invention, wherein Fig. 1A is a side schematic view of the dual-arm output device of the present invention, and Fig. 1B is a schematic cross-sectional view of the dual-arm output device of the present invention, as shown in Fig. 1 , the S The band high-peak klystron dual-arm output device includes an output cavity 1 and a dual-arm waveguide device, and the dual-arm waveguide device includes two identical single-arm waveguide devices, and these two single-arm waveguide devices are respectively connected to the output cavity 1 Symmetrically connected to form a dual-arm waveguide output structure, each single-arm waveguide device includes a curved waveguide 2, a straight waveguide 3, a curved waveguide 2 component 4, an output window component 5, and a straight waveguide 2 component 6 connected sequentially from bottom to top, in:
所述输出腔1位于该双臂输出装置的最下端，其结构如图2所示，其中，图2A为所述输出腔的立体结构示意图，图2B为所述输出腔的剖面示意图，所述输出腔1的侧面腔壁上开有两个对称的耦合孔，分别与对称安装的弯波导一2连接，所述耦合孔在其连接口处开有焊料槽，以保证所述输出腔1与所述弯波导一2紧密焊接，所述输出腔1用于从电子注提取高峰值功率的微波，并通过侧面腔壁上的耦合孔传送到相应的弯波导一2；The output cavity 1 is located at the lowermost end of the dual-arm output device, and its structure is shown in Figure 2, wherein Figure 2A is a schematic three-dimensional structure diagram of the output cavity, and Figure 2B is a schematic cross-sectional view of the output cavity, the There are two symmetrical coupling holes on the side cavity wall of the output cavity 1, which are respectively connected to the symmetrically installed curved waveguides 1 and 2. The coupling holes have solder grooves at their connection ports to ensure that the output cavity 1 and The curved waveguide-2 is tightly welded, and the output cavity 1 is used to extract high peak power microwaves from the electron beam, and transmit them to the corresponding curved waveguide-2 through the coupling hole on the side cavity wall;
其中，所述输出腔1工作在S波段，其工作电压和电流分别为420kV和520A，所述输出腔1高频参数的设计包括：a）谐振腔的谐振频率、特性阻抗R/Q、间隙耦合系数M和外加载品质因数Q的设计；b）间隙渡越角的选择（即连接口的大小），其中，利用PIC软件可以设计输出腔1的谐振频率，所述输出腔1为重入式圆柱形谐振腔，保持谐振频率基本不变时，调节腔直径、腔高、漂移管的内外直径和间隙距离，使得M2*R/Q最大时，就可以得到优化后的输出腔直径和腔高等参数，其中，M为间隙耦合系数，R/Q是输出腔的特性阻抗；两个单臂波导装置分别与输出腔1对称的连接，他们间的耦合是通过在输出腔1的侧面腔壁上开设耦合孔实现的，开口的大小与输出腔的外加载品质因数Q有关，一般由带宽和增益决定。Wherein, the output cavity 1 works in the S-band, and its operating voltage and current are 420kV and 520A respectively. The design of the high-frequency parameters of the output cavity 1 includes: a) the resonant frequency of the resonant cavity, the characteristic impedance R/Q, the gap The design of the coupling coefficient M and the externally loaded quality factor Q; b) the selection of the gap transition angle (that is, the size of the connection port), wherein the resonant frequency of the output cavity 1 can be designed by using PIC software, and the output cavity 1 is a reentrant When the resonant frequency is kept basically unchanged, adjust the cavity diameter, cavity height, the inner and outer diameters of the drift tube, and the gap distance so that M 2 *R/Q is the largest, and the optimized output cavity diameter and Cavity parameters, among them, M is the gap coupling coefficient, R/Q is the characteristic impedance of the output cavity; two single-arm waveguide devices are respectively connected to the output cavity 1 symmetrically, and the coupling between them is through the side cavity of the output cavity 1 It is achieved by opening a coupling hole on the wall. The size of the opening is related to the quality factor Q of the external loading of the output cavity, and is generally determined by the bandwidth and gain.
所述弯波导一2与直波导一3相接，用于传输微波功率，所述弯波导一2的结构示意图如图3所示，其中，图3A为所述弯波导一的立体结构示意图，图3B为所述弯波导一的剖面示意图；The curved waveguide one 2 is connected with the straight waveguide one 3 for transmitting microwave power. The structural diagram of the curved waveguide one 2 is shown in Figure 3, wherein Figure 3A is a schematic diagram of the three-dimensional structure of the curved waveguide one, 3B is a schematic cross-sectional view of the curved waveguide 1;
在本发明一实施例中，所述弯波导一2由标准波导BJ26按一定角度弯曲而成；In an embodiment of the present invention, the curved waveguide 2 is formed by bending a standard waveguide BJ26 at a certain angle;
所述直波导一3与弯波导二组件4相连，用于传输微波功率，所述直波导一3的结构示意图如图4所示，其中，图4A为所述直波导一的立体结构示意图，图4B为所述直波导一的剖面示意图；The straight waveguide one 3 is connected to the curved waveguide two assembly 4 for transmitting microwave power. The structural schematic diagram of the straight waveguide one 3 is shown in FIG. 4, wherein FIG. 4A is a three-dimensional structural schematic diagram of the straight waveguide one, Fig. 4B is a schematic cross-sectional view of the straight waveguide one;
在本发明一实施例中，所述直波导一3为标准波导BJ26；In an embodiment of the present invention, the straight waveguide 3 is a standard waveguide BJ26;
所述弯波导二组件4与输出窗组件5的下端相连，用于传输微波功率，所述弯波导二组件4的结构示意图如图3所示，其中，图3C为所述弯波导二组件的立体结构示意图，图3D为所述弯波导二组件的剖面示意图，从图中可以看出，所述弯波导二组件4的顶端比所述弯波导一2多一个圆法兰，用于与所述输出窗组件5的下端连接；The second curved waveguide assembly 4 is connected to the lower end of the output window assembly 5 for transmitting microwave power. The structural diagram of the second curved waveguide assembly 4 is shown in Figure 3, wherein Figure 3C is the structure of the second curved waveguide assembly Figure 3D is a schematic cross-sectional view of the second curved waveguide component. It can be seen from the figure that the top of the curved waveguide second component 4 has one more round flange than the curved waveguide one 2, which is used to communicate with the curved waveguide one. The lower end of the output window assembly 5 is connected;
所述输出窗组件5的顶端与直波导二组件6相连，用于传输微波功率，图5为所述输出窗组件5的结构示意图，其中，图5A为所述输出窗组件的立体结构示意图，图5B为所述输出窗组件的剖面示意图，如图5所示，所述输出窗组件5由陶瓷窗片和围绕在陶瓷窗片周围的圆波导构成，为了保证工作带宽内反射系数的要求，需要选择合适的窗片并计算窗片在圆波导里面的位置；在本发明一实施例中，所述输出窗组件5为盒型输出窗组件，盒型输出窗在工作频带内需要满足驻波比系数要求，所述盒型输出窗组件5的磁场分布如图6所示，其中，图6A为所述盒型输出窗组件5的电场分布示意图，图6B为所述盒型输出窗组件5的磁场分布示意图；The top of the output window assembly 5 is connected to the second straight waveguide assembly 6 for transmitting microwave power. FIG. 5 is a schematic structural view of the output window assembly 5, wherein FIG. 5A is a three-dimensional structural schematic diagram of the output window assembly, 5B is a schematic cross-sectional view of the output window assembly. As shown in FIG. 5, the output window assembly 5 is composed of a ceramic window and a circular waveguide surrounding the ceramic window. In order to ensure the requirement of reflection coefficient within the working bandwidth, It is necessary to select a suitable window and calculate the position of the window in the circular waveguide; in an embodiment of the present invention, the output window assembly 5 is a box-type output window assembly, and the box-type output window needs to meet the standing wave According to ratio coefficient requirements, the magnetic field distribution of the box-shaped output window assembly 5 is shown in Figure 6, wherein, Figure 6A is a schematic diagram of the electric field distribution of the box-shaped output window assembly 5, and Figure 6B is the box-shaped output window assembly 5 The schematic diagram of the magnetic field distribution;
所述直波导二组件6的两端分别安装有圆法兰和方法兰，其中，圆法兰与输出窗组件5连接，方法兰与负载连接，用于将微波功率传输给所述负载，所述直波导二组件6的结构示意图如图7所示，其中，图7A为所述直波导二组件6的立体结构示意图，图7B为所述直波导二组件6的剖面示意图。The two ends of the straight waveguide assembly 6 are respectively equipped with a round flange and a square flange, wherein the round flange is connected to the output window assembly 5, and the square flange is connected to the load for transmitting the microwave power to the load. The structural schematic diagram of the second straight waveguide component 6 is shown in FIG. 7 , wherein FIG. 7A is a three-dimensional structural schematic diagram of the second straight waveguide component 6 , and FIG. 7B is a cross-sectional schematic diagram of the second straight waveguide component 6 .
为了达到工作频带内的驻波系数的要求，本发明采用了两段弯波导。所述双臂输出装置工作时，所述输出腔1从电子注提取高峰值功率的微波，并通过侧面腔壁的耦合孔传送到所述弯波导一2，依次经过所述直波导一3和输出窗组件5后，微波功率最后传输到与所述直波导二组件6连接的负载，从而完成了高峰值功率从输出腔到负载的传输。In order to meet the requirement of the standing wave coefficient in the working frequency band, the present invention adopts two sections of curved waveguides. When the dual-arm output device is working, the output cavity 1 extracts microwaves with high peak power from the electron beam, and transmits them to the curved waveguide 2 through the coupling hole on the side cavity wall, passing through the straight waveguide 3 and the After outputting the window assembly 5, the microwave power is finally transmitted to the load connected to the second straight waveguide assembly 6, thus completing the transmission of high peak power from the output cavity to the load.
以上所述的具体实施例，对本发明的目的、技术方案和有益效果进行了进一步详细说明，所应理解的是，以上所述仅为本发明的具体实施例而已，并不用于限制本发明，凡在本发明的精神和原则之内，所做的任何修改、等同替换、改进等，均应包含在本发明的保护范围之内。The specific embodiments described above have further described the purpose, technical solutions and beneficial effects of the present invention in detail. It should be understood that the above descriptions are only specific embodiments of the present invention and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included within the protection scope of the present invention.
Claims (10)
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109767963A (en) * | 2018-12-29 | 2019-05-17 | 中国电子科技集团公司第十二研究所 | A kind of klystron with waveguide bend structure |
| CN115985738A (en) * | 2023-02-28 | 2023-04-18 | 西南交通大学 | E-type waveguide oscillator |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109767963A (en) * | 2018-12-29 | 2019-05-17 | 中国电子科技集团公司第十二研究所 | A kind of klystron with waveguide bend structure |
| CN109767963B (en) * | 2018-12-29 | 2021-04-02 | 中国电子科技集团公司第十二研究所 | Klystron with bent waveguide structure |
| CN115985738A (en) * | 2023-02-28 | 2023-04-18 | 西南交通大学 | E-type waveguide oscillator |
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