CN104751883A - Programming method of nonvolatile memory - Google Patents
Programming method of nonvolatile memory Download PDFInfo
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- CN104751883A CN104751883A CN201310741017.8A CN201310741017A CN104751883A CN 104751883 A CN104751883 A CN 104751883A CN 201310741017 A CN201310741017 A CN 201310741017A CN 104751883 A CN104751883 A CN 104751883A
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Abstract
The invention discloses a programming method of a nonvolatile memory. The method comprises carrying out decoding on a programming instruction of a pre-programming area of a nonvolatile memory, determining if the programming instruction is produced in an erasing suspending process of the nonvolatile memory, if the programming instruction is produced in the erasing suspending process, carrying out programming verification and programming process on the pre-programming area, if the programming instruction is not produced in the erasing suspending process, determining if the address of the pre-programming area and the address of an erased zone corresponding to the erasing process exist in the same physical storage block, if the addresses exist in the same physical storage block, carrying out over-erasing verification and over-erasing repair processes on the erased zone, and if the addresses do not exist in the same physical storage block or the over-erasing repair process on the erasing area is finished, carrying out programming verification and programming process on the pre-programming area. The method can eliminate influence produced by over-erasing-caused leakage current on the programming process so that programming process correctness and stability are guaranteed.
Description
Technical field
The present invention relates to non-volatile memory technologies field, be specifically related to a kind of programmed method of nonvolatile memory.
Background technology
Nonvolatile memory, is also called non-volatility memorizer, briefly, can keep the storer of stored data exactly under powering-off state.Along with the development of the correlation technique of nonvolatile memory, the application of nonvolatile memory is more and more extensive.
Nonvolatile memory user in the process of erase operation can send pause instruction to suspend erase operation, goes the instruction performing other, as programming instruction and read instruction etc.After other instruction is finished, sends recovery instruction and recover erase operation.Due to the pause instruction in erase operation process, erase operation does not have normal termination, may produce erasing.Cross erasing and can provide leakage current to the physical storage block (BLOCK) at erase area place.If suspend in the process of erase operation and perform programming instruction, and the address of the address of programming operation and erase operation is in same physical storage block, bit line due to the unit of same physical storage block is through, the leakage current crossing erasing generation can have an impact to programming process, causes programming unsuccessful or misprogrammed occurring.
In prior art, in the process suspending erase operation, programming instruction is performed to nonvolatile memory, directly carry out programming School Affairs programming operation, the leakage current produced owing to crossing erasing so possibly causes unsuccessful or misprogrammed of programming, thus affects correctness and the stability of programming process.
Summary of the invention
In view of this, the embodiment of the present invention provides a kind of programmed method of nonvolatile memory, solves the leakage current produced owing to crossing erasing in prior art and causes the unsuccessful or misprogrammed of programming and affect the correctness of programming process and the technical matters of stability.
Embodiments provide a kind of programmed method of nonvolatile memory, comprising:
Decoding is carried out to the programming instruction of the preprogramming area of described nonvolatile memory;
Judge whether described programming instruction occurs in the process suspending erase operation, if do not occur in the process of described time-out erase operation, then carries out programming School Affairs programming operation to described preprogramming area;
If occurred in the process of described time-out erase operation, then judge that whether the address of the erase area that the address of described preprogramming area is corresponding with described erase operation is at same physical storage block;
If at described same physical storage block, then erasing School Affairs was carried out to described erase area and crossed erasing reparation operation;
If not at described same physical storage block or after terminating the operation of erasing reparation excessively of described erase area, then programming School Affairs programming operation is carried out to described preprogramming area.
Further, erasing School Affairs was carried out to described erase area and crossed erasing reparation operation, be specially:
Carried out erasing to the reparation unit of described erase area verify and judge whether to wipe verification by described mistake, if do not wipe verification by described mistake, then erasing reparation was carried out to described reparation unit and operate and turn back to carry out wiping to the reparation unit of described erase area and verify and judge whether to wipe verification by described mistake;
If wipe verification by described mistake, then judge that whether reparation address that described reparation unit is corresponding is that last of described erase area repairs address;
If last reparation address described, then terminate to repair operation to the erasing of crossing of described erase area;
If not described last repair address, then increase progressively or reparation address that the described reparation unit that successively decreases is corresponding turn back to and erasing was carried out to the reparation unit of described erase area verify and judge whether to wipe verification by described mistake.
Further, the described reference voltage crossing erasing verification is 0 volt.
Further, the method for the described verification of erasing is excessively the threshold voltage of the reparation unit of described erase area and described mistake are wiped the reference voltage verified compare;
When the threshold voltage of the reparation unit of described erase area is greater than the reference voltage of the described verification of erasing excessively, described reparation unit wipes verification by described mistake;
When the threshold voltage of the reparation unit of described erase area is less than the reference voltage of the described verification of erasing excessively, described reparation unit does not wipe verification by described mistake.
Further, programming School Affairs programming operation is carried out to described preprogramming area, is specially:
Carry out programming to the pre-programmed unit of described preprogramming area verify and judge whether by described programming verification, if not by described programming verification, then carry out programming operation to described pre-programmed unit and turn back to carrying out programming to the pre-programmed unit of described preprogramming area and verifying and judge whether to be verified by described programming;
If by described programming verification, then judge that whether programming address that described pre-programmed unit is corresponding is last address of programming of described preprogramming area;
If last programming address described, then terminate the programming operation to described preprogramming area;
If not last programming address described, then increase progressively or programming address that the described pre-programmed unit that successively decreases is corresponding turn back to and programming is carried out to the pre-programmed unit of described preprogramming area verify and judge whether to be verified by described programming.
Further, the reference voltage of described programming verification is the threshold voltage of programming unit.
Further, the method for described programming verification is the threshold voltage of the pre-programmed unit of described preprogramming area and the described reference voltage verified of programming are compared;
When the threshold voltage of the pre-programmed unit of described preprogramming area is greater than the reference voltage of described programming verification, described pre-programmed unit is by described programming verification;
When the threshold voltage of the pre-programmed unit of described preprogramming area is less than the reference voltage of described programming verification, described pre-programmed unit is not by described programming verification.
The programmed method of the nonvolatile memory that the embodiment of the present invention proposes, by after the programming instruction decoding success of preprogramming area, add and erasing reparation operation is crossed to the erasing School Affairs of crossing of erase area, and to preprogramming area, programming School Affairs programming operation is being carried out again to crossing after erasing reparation operation terminates of erase area, can eliminate like this because the leakage current of erasing generation is excessively on the impact of programming process, thus ensure that correctness and the stability of programming process.
Accompanying drawing explanation
By reading the detailed description done non-limiting example done with reference to the following drawings, other features, objects and advantages of the present invention will become more obvious:
Fig. 1 is the process flow diagram of the programmed method of nonvolatile memory according to the embodiment of the present invention;
Fig. 2 carried out wiping School Affairs to erase area in Fig. 1 to cross the process flow diagram that operation is repaired in erasing;
Fig. 3 is the distribution plan of the threshold voltage of erase area according to the embodiment of the present invention;
Fig. 4 is the process flow diagram in Fig. 1, preprogramming area being carried out to programming School Affairs programming operation;
Fig. 5 is the threshold voltage distribution plan of pre-programmed unit according to the embodiment of the present invention and programming unit.
Embodiment
Below in conjunction with drawings and Examples, the present invention is described in further detail.Be understandable that, specific embodiment described herein is only for explaining the present invention, but not limitation of the invention.It also should be noted that, for convenience of description, illustrate only part related to the present invention in accompanying drawing but not full content.
Show embodiments of the invention in figs. 1-5.
Embodiments provide a kind of programmed method of nonvolatile memory.Fig. 1 is the process flow diagram of the programmed method of nonvolatile memory according to the embodiment of the present invention.As shown in Figure 1, the programmed method of described nonvolatile memory comprises:
Step S11, decoding is carried out to the programming instruction of the preprogramming area of nonvolatile memory.
Described preprogramming area is the region needing in programming instruction to programme, and is also contained in programming instruction about the size, address etc. of the relevant information such as preprogramming area of this preprogramming area.Decoding is carried out to this programming instruction and after success, just can carry out programming School Affairs programming operation to preprogramming area.
Step S12, judge programming instruction whether occur in suspend erase operation process in.
After execution of step S11, just can carry out programming School Affairs programming operation to preprogramming area.But, before carrying out carrying out programming School Affairs programming operation to preprogramming area, need to perform this step.This is because suspend the process of erase operation, belong to the process that erase operation does not normally execute, erasing may be there is in the process and produced leakage current thus, can have an impact to follow-up programming process, so wipe the impact on programming process to prevent, need to perform this step before programming process.
In this step, if programming instruction occurs in the process suspending erase operation, then step S13 is performed; If programming instruction does not occur in the process suspending erase operation, then perform step S15.
Step S13, judge that whether the address of the erase area that the address of preprogramming area is corresponding with erase operation is at same physical storage block.
After execution of step S12, if programming instruction occurs in the process suspending erase operation, then perform this step.This is because the bit line of the unit of same physical storage block is through, if preprogramming area and erase area are positioned at same physical storage block, erase area due to cross erasing produce leakage current can have an impact to the programming process of preprogramming area, and cause programming unsuccessful or misprogrammed occurring, so in order to the leakage current preventing erasing from producing is on the impact of preprogramming area, need to perform this step before programming process.
In this step, if the address of the address of the preprogramming area erase area corresponding with erase operation is at same physical storage block, then step S14 is performed; If the address of the erase area that the address of preprogramming area is corresponding with erase operation is not at same physical storage block, then perform step S15.
Step S14, erase area carried out to erasing School Affairs and cross erasing and repair operation.
After execution of step S13, if the address of the address of the preprogramming area erase area corresponding with erase operation is at same physical storage block, then perform this step, namely erasing School Affairs was carried out to erase area and cross erasing and repair operation.
Fig. 2 carried out wiping School Affairs to erase area in Fig. 1 to cross the process flow diagram that operation is repaired in erasing.Alternatively, see Fig. 2, erasing School Affairs was carried out to erase area and crossed erasing reparation operation, be specially:
Step S141, to the reparation unit of erase area carried out erasing verify and judge whether by mistake wipe verification.
When carrying out erasing School Affairs to erase area and crossing erasing reparation operation, first performed this step, namely erasing was carried out to the reparation unit of erase area and verify and judge whether to wipe verification by crossing.If the reparation unit of erase area did not pass through erasing verification, then performed step S142; If the reparation unit of erase area passed through to wipe verification, then performed step S143.
It should be noted that, described reparation unit performs the elementary cell once crossing erasing verification, and described reparation unit may comprise one or more storage unit of erase area.
In the present embodiment, alternatively, the described reference voltage crossing erasing verification is 0 volt.The given reference voltage crossing erasing verification, is convenient to next carry out erasing verification.
In the present embodiment, alternatively, the described method crossing erasing verification is that the threshold voltage of the reparation unit of erase area is wiped the reference voltage verified and compared with crossing; When the threshold voltage of the reparation unit of erase area was greater than the reference voltage of erasing verification, repaired unit and passed through to wipe verification; When the threshold voltage of the reparation unit of erase area was less than the reference voltage of erasing verification, repaired unit and do not pass through erasing verification.
Fig. 3 is the distribution plan of the threshold voltage of erase area according to the embodiment of the present invention.Be described further crossing erasing verification below in conjunction with Fig. 3.See Fig. 3, transverse axis V
trepresent the threshold voltage of erase area, longitudinal axis N represents the number of the storage unit of erase area; Curve C L and transverse axis V
tregional Representative's erase area of surrounding.In figure 3, be positioned at erase area part and the shadow region part on the longitudinal axis N left side, the threshold voltage of the reparation unit in this erase area is less than 0 volt of threshold voltage namely repairing unit and was less than the reference voltage wiping verification, illustrate that the reparation unit of this erase area was erase unit, therefore, the reparation unit of this erase area did not pass through erasing verification; Be positioned at erase area part and the non-hatched area part on the longitudinal axis N left side, the threshold voltage of the reparation unit in this erase area is greater than 0 volt of threshold voltage namely repairing unit and was greater than the reference voltage wiping verification, illustrate that the reparation unit of this erase area is normal erase unit, therefore, the reparation unit of this erase area have passed erasing verification.
Step S142, to reparation unit carried out erasing repair operation.
After completing steps S141, if the reparation unit of erase area did not pass through erasing verification, then performed this step.After erasing reparation operation was carried out to reparation unit, then turn back to step S141, if also do not pass through erasing verification, then also perform this step, otherwise, perform step S143.
Describedly cross erasing to repair operation be exactly that the erase unit of crossing repaired in unit is become normal erase unit gradually, the threshold voltage being about to erase unit becomes gradually be greater than 0 volt by being less than 0 volt.In figure 3, the threshold voltage being positioned at the reparation unit of shadow region part is less than 0 volt, repairing operation, changing on the right side of longitudinal axis N by the reparation unit of this part by crossing erasing, its threshold voltage is become and is greater than 0 volt, achieve and become cross erase unit into normal erase unit.When erase area is all positioned at the right side of longitudinal axis N, show that operation is repaired in the erasing of crossing completed erase area.
Whether step S143, to judge to repair reparation address corresponding to unit be that last of erase area repairs address.
After completing steps S141, if the reparation unit of erase area passed through to wipe verification, then performed this step.If repair last reparation address that reparation address corresponding to unit is erase area, show that operation is repaired in the erasing of crossing completed erase area, then execution step S145; If repair last reparation address that reparation address corresponding to unit is not erase area, show that operation is repaired in the erasing of crossing also do not completed erase area, then execution step S144.
Step S144, increase progressively or successively decrease and repair reparation address corresponding to unit.
After completing steps S143, if repair last reparation address that reparation address corresponding to unit is not erase area, show that operation is repaired in the erasing of crossing also do not completed erase area, then perform this step.After executing this step, turn back to step S141.
It should be noted that, increase progressively or successively decrease and repair reparation address corresponding to unit, can increase or reduce one each time and repair reparation address corresponding to unit, correspondingly repair unit to one and carried out erasing reparation operation; Also can increase or reduce two or more each time and repair reparation address corresponding to unit, correspondingly unit be repaired to two or more and one by one carried out erasing reparation operation.Therefore, according to actual conditions, the rule of repairing address and carrying out increasing progressively or successively decreasing can be preset.Reparation address corresponding to unit is repaired by increasing progressively or successively decreasing, reparation address can be made to cover all storage spaces of above-mentioned erase area, constantly repeat step S141, step S142 and step S143 again, thus realize repairing operation to the erasing of crossing of corresponding erase area, ready for carrying out follow-up programming process.
Step S145, terminate to erase area cross erasing repair operation.
After execution of step S143, if repair last reparation address that reparation address corresponding to unit is erase area, show that operation is repaired in the erasing of crossing completed erase area, then perform this step, namely terminate to repair operation to the erasing of crossing of erase area.Then step S15 is performed.
Crossed erasing reparation operation by carrying out erasing School Affairs to erase area, and the leakage current produced owing to crossing erasing can be eliminated, thus ensure that correctness and the stability of later programmed process.
Step S15, programming School Affairs programming operation is carried out to preprogramming area.
If if after execution of step S12 programming instruction do not occur in suspend erase operation process in or after execution of step S13 the address of the erase area that the address of preprogramming area is corresponding with erase operation be at same physical storage block or after execution of step S14, then perform this step, namely programming School Affairs programming operation is carried out to preprogramming area.
Fig. 4 is the process flow diagram in Fig. 1, preprogramming area being carried out to programming School Affairs programming operation.Alternatively, see Fig. 4, programming School Affairs programming operation is carried out to preprogramming area, is specially:
Step S151, the pre-programmed unit of preprogramming area carried out to programming and verify and judge whether by programming verification.
When carrying out programming School Affairs programming operation to preprogramming area, first perform this step, namely programming is carried out to the pre-programmed unit of preprogramming area and verify and judge whether by programming verification.If the pre-programmed unit of preprogramming area by programming verification, does not then perform step S152; If the pre-programmed unit of preprogramming area by programming verification, then performs step S153.
It should be noted that, described pre-programmed unit is the elementary cell performing one-time programming verification.
In the present embodiment, alternatively, the reference voltage of described programming verification is the threshold voltage of programming unit.The reference voltage of given programming verification, is convenient to next carry out programming verification.
In the present embodiment, alternatively, the method for described programming verification is the threshold voltage of the pre-programmed unit of preprogramming area and the reference voltage verified of programming are compared; When the threshold voltage of the pre-programmed unit of preprogramming area is greater than the reference voltage of programming verification, pre-programmed unit is by programming verification; When the threshold voltage of the pre-programmed unit of preprogramming area is less than the reference voltage of programming verification, pre-programmed unit is not by programming verification.
Fig. 5 is the threshold voltage distribution plan of pre-programmed unit according to the embodiment of the present invention and programming unit.Below in conjunction with Fig. 5, programming verification is described further.See Fig. 5, transverse axis V
tthe threshold voltage of representative memory cell, the number of longitudinal axis N representative memory cell, perpendicular to transverse axis V
tdotted line V
1the reference voltage of representative programming verification, i.e. the threshold voltage of programming unit; Curve C L
1with transverse axis V
tthe Regional Representative's pre-programmed unit (i.e. the erase unit of nonvolatile memory) surrounded, curve C L
2with transverse axis V
tthe Regional Representative's programming unit surrounded.In Figure 5, dotted line V is positioned at
1the threshold voltage of the pre-programmed unit in left side is less than the threshold voltage of programming unit, and namely the threshold voltage of this pre-programmed unit is less than the reference voltage of programming verification, and therefore, this pre-programmed unit is not by programming verification.
Step S152, programming operation is carried out to pre-programmed unit.
After completing steps S151, if the pre-programmed unit of preprogramming area is not by programming verification, then perform this step.After programming operation is carried out to pre-programmed unit, then turn back to step S151, if also not by programming verification, then also perform this step, otherwise, perform step S153.
Pre-programmed unit is become programming unit by described programming operation exactly gradually, and the threshold voltage by pre-programmed unit becomes large gradually, until be greater than the threshold voltage of programming unit.In Figure 5, dotted line V is positioned at
1the pre-programmed unit in left side, by programming operation, changes to dotted line V by this pre-programmed unit
1right side, makes its threshold voltage be greater than the threshold voltage of programming unit, achieves and pre-programmed unit is become programming unit (representing programming operation process with the line segment of the band arrow being pointed to programming unit by pre-programmed unit in Figure 5).When pre-programmed unit is all positioned at the V of dotted line
1during right side, show the programming operation to pre-programmed unit.
Step S153, judge that whether programming address that pre-programmed unit is corresponding is last programming address of preprogramming area.
After completing steps S151, if the pre-programmed unit of preprogramming area is by programming verification, then perform this step.If the programming address that pre-programmed unit is corresponding is last programming address of preprogramming area, shows to complete the programming operation to preprogramming area, then perform step S155; If last the programming address of the Bu Shi preprogramming area, programming address that pre-programmed unit is corresponding, shows not complete the programming operation to preprogramming area, then performs step S154.
Step S154, to increase progressively or programming address that the pre-programmed unit that successively decreases is corresponding.
After completing steps S153, if last programming address of Bu Shi preprogramming area, programming address corresponding to pre-programmed unit, show not complete the programming operation to preprogramming area, then perform this step.After executing this step, turn back to step S151.
It should be noted that, increase progressively or programming address that the pre-programmed unit that successively decreases is corresponding, can increase or reduce the programming address that a pre-programmed unit is corresponding each time, correspondingly programming operation be carried out to a pre-programmed unit; Also can increase or reduce programming address corresponding to two or more pre-programmed unit each time, correspondingly one by one programming operation be carried out to two or more pre-programmed unit.Therefore, according to actual conditions, the rule carried out increasing progressively or successively decreasing in programming address can be preset.By the programming address increased progressively or the pre-programmed unit that successively decreases is corresponding, all storage spaces of covering preprogramming area, programming address can be made, more constantly repeat step S151, step S152 and step S153, thus realize the programming operation to preprogramming area.
Step S155, the programming operation terminating preprogramming area.
After completing steps S153, if programming address corresponding to pre-programmed unit is last programming address of preprogramming area, shows to complete the programming operation to preprogramming area, then perform this step, namely terminate the programming operation to preprogramming area.
The programmed method of the nonvolatile memory that the embodiment of the present invention proposes, by after the programming instruction decoding success of preprogramming area, add and erasing reparation operation is crossed to the erasing School Affairs of crossing of erase area, and after mistake erasing reparation operation terminates, again programming School Affairs programming operation is carried out to preprogramming area, can eliminate like this because the leakage current of erasing generation is excessively on the impact of programming process, thus ensure that correctness and the stability of programming process.
Note, above are only preferred embodiment of the present invention and institute's application technology principle.Skilled person in the art will appreciate that and the invention is not restricted to specific embodiment described here, various obvious change can be carried out for a person skilled in the art, readjust and substitute and can not protection scope of the present invention be departed from.Therefore, although be described in further detail invention has been by above embodiment, the present invention is not limited only to above embodiment, when not departing from the present invention's design, can also comprise other Equivalent embodiments more, and scope of the present invention is determined by appended right.
Claims (7)
1. a programmed method for nonvolatile memory, is characterized in that, comprising:
Decoding is carried out to the programming instruction of the preprogramming area of described nonvolatile memory;
Judge whether described programming instruction occurs in the process suspending erase operation, if do not occur in the process of described time-out erase operation, then carries out programming School Affairs programming operation to described preprogramming area;
If occurred in the process of described time-out erase operation, then judge that whether the address of the erase area that the address of described preprogramming area is corresponding with described erase operation is at same physical storage block;
If at described same physical storage block, then erasing School Affairs was carried out to described erase area and crossed erasing reparation operation;
If not at described same physical storage block or after terminating the operation of erasing reparation excessively of described erase area, then programming School Affairs programming operation is carried out to described preprogramming area.
2. the programmed method of nonvolatile memory according to claim 1, is characterized in that, carries out erasing School Affairs and crosses erasing reparation operation, and be specially described erase area:
Carried out erasing to the reparation unit of described erase area verify and judge whether to wipe verification by described mistake, if do not wipe verification by described mistake, then erasing reparation was carried out to described reparation unit and operate and turn back to carry out wiping to the reparation unit of described erase area and verify and judge whether to wipe verification by described mistake;
If wipe verification by described mistake, then judge that whether reparation address that described reparation unit is corresponding is that last of described erase area repairs address;
If last reparation address described, then terminate to repair operation to the erasing of crossing of described erase area;
If not described last repair address, then increase progressively or reparation address that the described reparation unit that successively decreases is corresponding turn back to and erasing was carried out to the reparation unit of described erase area verify and judge whether to wipe verification by described mistake.
3. the programmed method of nonvolatile memory according to claim 2, is characterized in that, the described reference voltage crossing erasing verification is 0 volt.
4. the programmed method of nonvolatile memory according to claim 3, is characterized in that, the method for the described verification of erasing is excessively the threshold voltage of the reparation unit of described erase area and described mistake are wiped the reference voltage verified compare;
When the threshold voltage of the reparation unit of described erase area is greater than the reference voltage of the described verification of erasing excessively, described reparation unit wipes verification by described mistake;
When the threshold voltage of the reparation unit of described erase area is less than the reference voltage of the described verification of erasing excessively, described reparation unit does not wipe verification by described mistake.
5. the programmed method of nonvolatile memory according to claim 1, is characterized in that, carries out programming School Affairs programming operation, be specially described preprogramming area:
Carry out programming to the pre-programmed unit of described preprogramming area verify and judge whether by described programming verification, if not by described programming verification, then carry out programming operation to described pre-programmed unit and turn back to carrying out programming to the pre-programmed unit of described preprogramming area and verifying and judge whether to be verified by described programming;
If by described programming verification, then judge that whether programming address that described pre-programmed unit is corresponding is last address of programming of described preprogramming area;
If last programming address described, then terminate the programming operation to described preprogramming area;
If not last programming address described, then increase progressively or programming address that the described pre-programmed unit that successively decreases is corresponding turn back to and programming is carried out to the pre-programmed unit of described preprogramming area verify and judge whether to be verified by described programming.
6. the programmed method of nonvolatile memory according to claim 5, is characterized in that, the reference voltage of described programming verification is the threshold voltage of programming unit.
7. the programmed method of nonvolatile memory according to claim 6, is characterized in that, the method for described programming verification is the threshold voltage of the pre-programmed unit of described preprogramming area and the described reference voltage verified of programming are compared;
When the threshold voltage of the pre-programmed unit of described preprogramming area is greater than the reference voltage of described programming verification, described pre-programmed unit is by described programming verification;
When the threshold voltage of the pre-programmed unit of described preprogramming area is less than the reference voltage of described programming verification, described pre-programmed unit is not by described programming verification.
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| CN111026675B (en) * | 2019-12-06 | 2022-02-15 | 华中科技大学 | Efficient flash memory data refreshing method and solid state disk based on flash memory |
| CN115312100A (en) * | 2022-09-30 | 2022-11-08 | 芯天下技术股份有限公司 | Post-programming method, erasing method, device, electronic equipment and storage medium |
| CN115312100B (en) * | 2022-09-30 | 2022-12-13 | 芯天下技术股份有限公司 | Post-programming method, erasing method, device, electronic equipment and storage medium |
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