CN104751775A - Pixel circuit with compensation function, driving method of pixel circuit and display circuit with compensation function - Google Patents
Pixel circuit with compensation function, driving method of pixel circuit and display circuit with compensation function Download PDFInfo
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- CN104751775A CN104751775A CN201310737429.4A CN201310737429A CN104751775A CN 104751775 A CN104751775 A CN 104751775A CN 201310737429 A CN201310737429 A CN 201310737429A CN 104751775 A CN104751775 A CN 104751775A
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Abstract
The invention relates to a pixel circuit with a compensation function, a driving method of the pixel circuit and a display circuit with the compensation function. In the pixel circuit, only one leakage current branch of a third transistor T3 is connected with a second node N2; in the dark state, the voltage of the second node N2 of leakage current is increased, so that the current of a second transistor T7 which serves as a driving transistor is reduced; and thus, micro bright spots are weakened, and the display contrast is improved.
Description
Technical field
The present invention relates to image element circuit and application thereof, specifically a kind of image element circuit with compensate function and driving method and display circuit.
Background technology
In recent years, developed and compared the lightweight and various types of panel display apparatus that volume is little of cathode-ray tube (CRT).In various types of panel display apparatus, because active array organic light emitting display device uses self luminous Organic Light Emitting Diode (OELD) to show image, usually there is the response time short, low-power consumption is used to drive, the relatively better characteristic of brightness and colour purity, so organic light-emitting display device has become the focus of display device of future generation.
For large-scale active array organic light emitting display device, comprise multiple pixels of the intersection region being positioned at sweep trace and data line.Each pixel includes OLED and for driving the image element circuit of described Organic Light Emitting Diode.Image element circuit generally includes switching transistor, driving transistors and holding capacitor.The characteristic of the pixel of active matrix organic light-emitting diode is subject to the impact of the unfavorable factor of the leakage current of difference between driving transistors and switching transistor, therefore by the quality uniformity of the image of so multiple pixels displays and consistance poor.
Fig. 1 is the circuit diagram of the conventional pixel of active array organic light emitting display device.In Fig. 1, the transistor that image element circuit comprises is PMOS transistor.See Fig. 1, the conventional pixel of active matrix organic light-emitting diode display device includes OLED OLED, has been connected to the image element circuit of data line VDATAm and scan control line scan, emi control organic light emitting diode OLED.The grid of the first transistor T31 is connected to one end of electric capacity C31, and the drain electrode of the first transistor T31 is connected with the source class of the 6th transistor T36.The grid of transistor seconds T32 is connected to the grid of third transistor T33, and is connected with sweep signal scan [n].The source electrode of transistor seconds T32 is connected to data-signal VDATAm and holds.The drain electrode of transistor seconds T32 is connected to the source class of the first transistor T31.The grid of third transistor T33 is connected to the grid of transistor seconds T32, and is connected with sweep signal scan [n].The source class (or drain electrode) of third transistor T33 is connected to the grid of the first transistor T31.The drain electrode (or source class) of third transistor T33 is connected to the drain electrode of the first transistor T31.The grid of the 4th transistor T34 is connected to scan control line scan [n-1].The source electrode (or drain electrode) of the 4th transistor T34 is connected to power supply signal Vinit and holds, and the drain electrode (or source electrode) of the 4th transistor T34 is connected to the grid of the first transistor T31.When scan control line scan [n-1] provides low level sweep signal to the 4th transistor T34, the 4th transistor T34 conducting, this node of Vinit voltage signal write N2, the previous frame signal stored by electric capacity C31 carries out initialization.The grid of the 5th transistor T35 is connected to the grid of the 6th transistor T36, and is connected with sweep signal emi [n].The source class of the 5th transistor T35 is connected to power supply vdd terminal, and is connected with one end of electric capacity C31.The drain electrode of the 5th transistor T35 is connected to the drain electrode of transistor seconds T32, and is connected with the source class of the first transistor T31.The grid of the 6th transistor T36 is connected to the grid of the 5th transistor T35, and the drain electrode of the 6th transistor T36 is connected to the anode of OLED.When scan control line scan [n] provides low level sweep signal to transistor seconds T32, third transistor T33, transistor seconds T32, third transistor T33 conducting, the first transistor T31 diode current flow, VDATAm signal is stored in electric capacity C31 to hold, the first transistor T31 diode form connects, and can compensate the skew of its threshold voltage like this.When scan control line emi [n] is for low level, the 5th transistor T35, the first transistor T31, the 6th transistor T36 conducting, OLED starts luminescence.Transistor has leakage current under the state turned off to be existed, image element circuit traditional is as shown in the figure when dark-state, and Section Point N2 exists two leakage current branch roads, as shown by arrows, one is spilt by the source electrode of the 4th transistor T34, and another is spilt by the source electrode of third transistor T33.Due to leakage current during dark-state, Section Point N2 voltage reduces, and driving transistors T31 electric current raises, and shielding body brightness during dark-state can increase, and namely increases the weight of glimmer point problem.Screen body, when dark-state, if leakage current is serious, will increase the weight of glimmer point, reduces screen body contrast, has a strong impact on screen body display effect.
Summary of the invention
For this reason, the technical matters that the screen body brightness being existing image element circuit causes due to leakage current when dark-state to be solved by this invention increases, provides a kind of image element circuit with compensate function and driving method and display circuit.
For solving the problems of the technologies described above, the technical solution used in the present invention is as follows:
With an image element circuit for compensate function, comprising:
5th transistor T5, described 5th transistor T5 comprise control pole, the first electrode and the second electrode, and first electrode of described 5th transistor T5 is connected with the first power supply, and second electrode of described 5th transistor T5 forms first node N1;
First electric capacity C1, one end of described first electric capacity C1 is connected with the first power supply, and the other end of described first electric capacity C1 forms Section Point N2;
The first transistor T1, described the first transistor T1 comprise control pole, the first electrode and the second electrode, and first electrode of described the first transistor T1 is connected with described first node N1; Second electrode of described the first transistor T1 is directly or indirectly connected with the 3rd power supply; The third line scan control line that control pole and this image element circuit of described the first transistor T1 are expert at is connected;
Transistor seconds T2, described transistor seconds T2 comprise control pole, the first electrode and the second electrode, and first electrode of described transistor seconds T2 is connected with first node N1; The control pole of described transistor seconds T2 is connected with described Section Point N2;
Third transistor T3, described third transistor T3 comprise control pole, the first electrode and the second electrode, and first electrode of described third transistor T3 is directly or indirectly connected with described Section Point N2; Second electrode of described third transistor T3 is connected with described first node N1; The second line scanning control line that control pole and this image element circuit of described third transistor T3 are expert at is connected;
4th transistor T4, described 4th transistor T4 comprise control pole, the first electrode and the second electrode, and the fourth line scan control line that control pole and this image element circuit of described 4th transistor T4 are expert at is connected; First electrode of described 4th transistor T4 is connected with data line; Second electrode of described 4th transistor T4 is connected with second electrode of described transistor seconds T2;
6th transistor T6, described 6th transistor T6 comprises control pole, the first electrode and the second electrode, first electrode of described 6th transistor T6 is connected with second electrode of described transistor seconds T2, and the first row scan control line that control pole and this image element circuit of described 6th transistor T6 are expert at is connected; Second electrode of described 6th transistor T6 is configured for the output terminal connecting dc electroluminescence device.
Described a kind of image element circuit with compensate function, also comprise the 7th transistor T7, described 7th transistor T7 comprises control pole, the first electrode and the second electrode, wherein, described first electrode of the 7th transistor T7 is connected with second electrode of the first transistor T1, and second electrode of described 7th transistor T7 is connected with the 3rd power supply; The third line scan control line that control pole and this image element circuit of described 7th transistor T7 are expert at is connected.
Described a kind of image element circuit with compensate function, also comprises the 8th transistor T8, and described 8th transistor T8 comprises control pole, the first electrode and the second electrode, and wherein, first electrode of described 8th transistor T8 is connected with Section Point N2; Described second electrode of the 8th transistor T8 is connected with the first electrode of described third transistor; The second line scanning control line that control pole and this image element circuit of described 8th transistor T8 are expert at is connected.
Described a kind of image element circuit with compensate function, also comprises dc electroluminescence device, and the positive pole of described dc electroluminescence device is connected with described output terminal, and the negative pole of described dc electroluminescence device is connected with second source.
The driving method of the described image element circuit with compensate function, is divided into first time period t1, the second time period t 2 and the 3rd time period t 3 by the scan period of every row pixel, wherein,
First time period t1, the third line scan control signal and the second line scanning control signal are low level, the first transistor T1 and third transistor T3 conducting by low level the third line scan control signal and the second line scanning control signal, the voltage of the 3rd power supply is provided to Section Point N2;
Second time period t 2, second line scanning control signal and fourth line scan control signal are low level, third transistor T3 and the 4th transistor T4 respond low level second line scanning control signal and fourth line scan control signal and conducting, by third transistor T3 by the transistor seconds T2 conducting that diode connects;
3rd time period t 3, the first row scan control signal transits to low level, 5th transistor T5 and the 6th transistor T6 is by the first row scan control signal and conducting, and the drive current that the first power supply provides flows to second source along the path through the 5th transistor T5, transistor seconds T2, the 6th transistor T6 and organic electroluminescence device.
With a display circuit for compensate function, comprise some above-mentioned arbitrary described image element circuits.
Technique scheme of the present invention has the following advantages compared to existing technology:
Described a kind of image element circuit with compensate function of the present invention, the leakage current only having third transistor T3 be connected with described Section Point N2, when dark-state because the voltage of leakage current Section Point N2 raises, electric current as the transistor seconds T7 of driving transistors reduces, weaken glimmer point problem, improve display comparison degree.
Described a kind of image element circuit with compensate function of the present invention, by increasing the 7th transistor T7 and the 8th transistor T8, described the first transistor T1 and third transistor T3 is used as double-grid structure, reduce further the leakage current of Section Point N2, weaken glimmer point problem further and improve display comparison degree.
Accompanying drawing explanation
In order to make content of the present invention be more likely to be clearly understood, below according to a particular embodiment of the invention and by reference to the accompanying drawings, the present invention is further detailed explanation, wherein
Fig. 1 is the circuit diagram of the conventional pixel of active array organic light emitting display device;
Fig. 2 is the schematic block diagram of the active array organic light emitting display device of one embodiment of the invention;
Fig. 3 is the structural representation of a kind of image element circuit of one embodiment of the invention;
Fig. 4 is the structural representation of a kind of image element circuit of another embodiment of the present invention;
Fig. 5 is the structural representation of a kind of image element circuit of third embodiment of the invention;
Fig. 6 is the structural representation of a kind of image element circuit of four embodiment of the invention;
Fig. 7 is the control signal sequential chart in image element circuit shown in Fig. 3 to Fig. 6.
Embodiment
See Fig. 2, the active array organic light emitting display device of one embodiment of the invention, it comprises: display unit 112, scanner driver and data driver.Wherein, described display unit 112 comprises multiple image element circuit 110 further, and described multiple image element circuit 110 is arranged in the intersection region of line scanning control line Sn1, Sn2, Sn3 and Sn4 and data line D1 to Dm in the matrix form.
Each image element circuit 110 is connected to line scanning control line (such as, Sn1, Sn2, Sn3 and Sn4) and the data line (described data line is connected to a row image element circuit 110 at the place of image element circuit 110 own) of n-th line.Such as, the image element circuit 110 being positioned at the i-th row and jth row is connected to the data line Dj of i-th line scans control line Si1, Si2, Si3 and Si4 and jth row.
Be initialised during each image element circuit 110 provides the first time period of scan control signal at scan control line, and the second time period of scan control signal that image element circuit 110 provides at scan control line accepts the data-signal that provides from data line.During the 3rd time period, image element circuit 110 has the brightness light corresponding to data-signal show image by launching, during described 3rd time period, after the scan control signal that scan control line provides, transit to suitable level, thus provide electric current to the Organic Light Emitting Diode arranged in each image element circuit 110.
Meanwhile, display unit 112 receive from outside (such as, from power supply) provide from the first power supply ELVDD, second source ELVSS and the 3rd power supply ELVL.First power supply ELVDD and second source ELVSS is used separately as high level voltage source and low level voltage source.First power supply ELVDD and second source ELVSS is used as the driving power of image element circuit 110.The change of voltage of 3rd power supply ELVL for compensating third transistor T3 grid and causing due to leakage current.
Scanner driver results from outside provides the scan control signal of (such as, providing from timing control unit) corresponding scan control signal.The scan control signal produced by scanner driver is sequentially supplied to image element circuit 110 respectively by scan control line Si1 to Sin.
Data driver produces provides the data of (such as, providing from timing control unit) and the corresponding data-signal of data controlling signal with outside.The data-signal produced by data driver is synchronously supplied to image element circuit 110 by data line D1 to Dm with sweep signal.
Embodiment 1
Shown in Figure 3, for the structural representation of a kind of image element circuit with compensate function of one embodiment of the invention, for the ease of illustrating, Fig. 3 only illustrates that the image element circuit 110 being positioned at n-th line and m row is example, and in figure, dotted portion is depicted as the image element circuit of the band compensate function in this image element circuit 110 except luminescent device.
With an image element circuit for compensate function, comprising:
5th transistor T5, described 5th transistor T5 comprise control pole, the first electrode and the second electrode, and first electrode of described 5th transistor T5 is connected with the first power supply ELVDD, and second electrode of described 5th transistor T5 forms first node N1.
First electric capacity C1, one end of described first electric capacity C1 is connected with the first power supply ELVDD, and the other end of described first electric capacity C1 forms Section Point N2.
The first transistor T1, described the first transistor T1 comprise control pole, the first electrode and the second electrode, and first electrode of described the first transistor T1 is connected with described first node N1; Second electrode of described the first transistor T1 is connected with the 3rd power supply ELVL; The third line scan control line that control pole and this image element circuit of described the first transistor T1 are expert at and Sn3 are connected.
Transistor seconds T2, described transistor seconds T2 comprise control pole, the first electrode and the second electrode, and first electrode of described transistor seconds T2 is connected with first node N1; The control pole of described transistor seconds T2 is connected with described Section Point N2.
Third transistor T3, described third transistor T3 comprise control pole, the first electrode and the second electrode, and first electrode of described third transistor T3 is connected with described Section Point N2; Second electrode of described third transistor T3 is connected with described first node N1; The second line scanning control line that control pole and this image element circuit of described third transistor T3 are expert at and Sn2 are connected.
4th transistor T4, described 4th transistor T4 comprise and control pole, the first electrode and the second electrode, and the fourth line scan control line that control pole and this image element circuit of described 4th transistor T4 are expert at and Sn4 are connected; First electrode of described 4th transistor T4 is connected with data line; Second electrode of described 4th transistor T4 is connected with second electrode of described transistor seconds T2.
6th transistor T6, described 6th transistor T6 comprises control pole, the first electrode and the second electrode, first electrode of described 6th transistor T6 is connected with second electrode of described transistor seconds T2, and the first row scan control line that control pole and this image element circuit of described 6th transistor T6 are expert at and Sn1 are connected; Second electrode of described 6th transistor T6 is configured for the output terminal connecting dc electroluminescence device.
As other embodiments, also comprise dc electroluminescence device, the positive pole of described organic electroluminescence device is connected with described output terminal, and the negative pole of described dc electroluminescence device is connected with second source ELVSS.The device of dc electroluminescence described in the present embodiment is for OLED.
Sequential chart shown in composition graphs 7, is discussed below the driving method of a kind of image element circuit with compensate function of one embodiment of the present of invention:
In the present embodiment, the scan period of every row pixel is divided into first time period t1, the second time period t 2 and the 3rd time period t 3, wherein,
First time period t1, the third line scan control signal and the second line scanning control signal are low level, the first transistor T1 and third transistor T3 conducting by low level the third line scan control signal and the second line scanning control signal, the voltage of the 3rd power supply ELVL is provided to Section Point N2;
Second time period t 2, second line scanning control signal and fourth line scan control signal are low level, third transistor T3 and the 4th transistor T4 respond low level second line scanning control signal and fourth line scan control signal and conducting, by third transistor T3 by the transistor seconds T2 conducting that diode connects;
3rd time period t 3, the first row scan control signal transits to low level, 5th transistor T5 and the 6th transistor T6 is by the first row scan control signal and conducting, and the drive current that the first power supply ELVDD provides flows to second source ELVSS along the path through the 5th transistor T5, transistor seconds T2, the 6th transistor T6 and organic electroluminescence device.
I.e. the first transistor T1, during scan control signal is supplied to the scan control line Sn3 time period, described the first transistor T1 is by the 3rd supply voltage ELVSS and first node N1 conducting; Third transistor T3, during scan control signal is supplied to the scan control line Sn2 time period, the 3rd supply voltage ELVSS by first node N1, is supplied to Section Point N2 by described third transistor T3; Image element circuit 112, is connected between the first power supply ELVDD and Organic Light Emitting Diode OLED, for providing drive current to Organic Light Emitting Diode OLED.
During the time period that scan control signal is supplied to scan control line Sn3, the first transistor T1 conducting, thus the voltage of the 3rd power supply ELVL is supplied to first node N1.Third transistor T3, during scan control signal is supplied to the scan control line Sn2 time period, the 3rd supply voltage ELVSS by first node N1, is supplied to Section Point N2 by described third transistor T3.
That is, the first transistor T1 during section, by third transistor T3, provides constant voltage ELVSS to Section Point N2 in the initialization time of image element circuit 110.
Transistor seconds T2 is connected between first node N1 and the 6th transistor T6, and the grid of transistor seconds T2 is connected to Section Point N2.Transistor seconds T2 controls from the amplitude that the fluorescent lifetime section of image element circuit 110 during flow to the drive current of Organic Light Emitting Diode OLED corresponding to the data-signal that transistor seconds T2 provides.
Third transistor T3 is connected between Section Point N2 and first node N1, and the grid of third transistor T3 is connected to scan control line Sn2.During the time period that scan control signal is supplied to scan control line Sn2, third transistor T3 conducting, thus the source electrode of transistor seconds T2 is connected with Section Point N2.
4th transistor T4 is connected between the drain electrode of data line Dm and transistor seconds T2, and the grid of the 4th transistor T4 is connected to scan control line Sn4.Scan control signal is being supplied to the time period of scan control line Sn4, the 4th transistor T4 conducting, thus the data-signal provided from data line Dm is being supplied to Section Point N2.
5th transistor T5 is connected between the first power supply ELVDD and first node N1, and the grid of the 5th transistor T5 is connected to scan control line Sn1.When the scan control signal provided from scan control line transits to low level, the 5th transistor T5 conducting, then the source electrode of transistor seconds T2 is connected to the first power supply ELVDD.
6th transistor T6 is connected between transistor seconds T2 and Organic Light Emitting Diode OLED.The grid of the 6th transistor T6 connects scan control line Sn1.High level scan control signal is being supplied to the time period of scan control line Sn1, the 6th transistor T6 ends, thus drive current can be prevented to be provided to Organic Light Emitting Diode OLED.During scan control signal transits to low level fluorescent lifetime section, the 6th transistor T6 conducting, thus transistor seconds is connected to Organic Light Emitting Diode OLED, transistor seconds T2 is supplied to Organic Light Emitting Diode drive current.
First capacitor C1 is connected between Section Point N2 and the first power supply ELVDD.Scan control signal is being supplied to scan control line Sn3 and during the Sn2 time period, is providing the 3rd supply voltage ELVSS to carry out initialization first capacitor C1 by third transistor T3 and the first transistor T1.Thereafter, scan control signal is being supplied to scan control line Sn2 and during the Sn4 time period, will with through the 4th transistor T4, the corresponding store voltages of the data-signal that transistor seconds T2 and third transistor T3 provides is in the first capacitor C1.
Organic Light Emitting Diode OLED is connected between image element circuit 112 and second source ELVSS.During the fluorescent lifetime section of image element circuit 110, Organic Light Emitting Diode OLED will launch the light corresponding to the drive current provided through the first power supply ELVDD, the 5th transistor T5, transistor seconds T2 and the 6th transistor T6.
In image element circuit 110, Section Point N2 is owing to only having a leakage current (see in figure shown in arrow) of third transistor T3, due to leakage current during dark-state, Section Point N2 voltage raises, electric current as the transistor seconds T7 of driving transistors reduces, weaken glimmer point problem, improve contrast.
Described a kind of image element circuit with compensate function of the present embodiment, at the leakage current only having third transistor T3 that described Section Point N2 is connected, when dark-state because the voltage of leakage current Section Point N2 raises, electric current as the transistor seconds T7 of driving transistors reduces, weaken glimmer point problem, improve display comparison degree.
Embodiment 2
Shown in Figure 4, as second embodiment of the present invention, on the basis of above-described embodiment 1, the image element circuit with compensate function of the present embodiment also comprises the 7th transistor T7, described 7th transistor T7 comprises control pole, the first electrode and the second electrode, wherein, described first electrode of the 7th transistor T7 is connected with second electrode of the first transistor T1, second electrode of described 7th transistor T7 is connected with the 3rd power supply ELVL, and namely second electrode of described the first transistor T1 is connected with the 3rd power supply indirectly by described 7th transistor; The third line scan control line that control pole and this image element circuit of described 7th transistor T7 are expert at is connected.
A kind of image element circuit with compensate function in the present embodiment, add the 7th transistor T7, by increasing by the 7th transistor T7, the first transistor T1 being used as double-gate structure, Section Point N2 leakage current can be reduced further, weaken glimmer point further, improve contrast.
Embodiment three
Shown in Figure 5, as the 3rd embodiment of the present invention, on the basis of above-described embodiment 1, the image element circuit with compensate function of the present embodiment also comprises the 8th transistor T8, described 8th transistor T8 comprises control pole, the first electrode and the second electrode, wherein, first electrode of described 8th transistor T8 is connected with Section Point N2; Described second electrode of the 8th transistor T8 is connected with the first electrode of described third transistor, and namely first electrode of described third transistor T3 is connected with described Section Point N2 indirectly by described 8th transistor T8; The second line scanning control line that control pole and this image element circuit of described 8th transistor T8 are expert at is connected.
A kind of image element circuit with compensate function in the present embodiment, add the 8th transistor T8, by increasing by the 8th transistor T8, third transistor T3 being used as double-gate structure, Section Point N2 leakage current can be reduced further, weaken glimmer point further, improve contrast.
Embodiment four
Shown in Figure 6, as other embodiments of the present invention, on the basis of above-described embodiment 2, the image element circuit with compensate function of the present embodiment also comprises the 8th transistor T8, described 8th transistor T8 comprises control pole, the first electrode and the second electrode, wherein, first electrode of described 8th transistor T8 is connected with Section Point N2; Described second electrode of the 8th transistor T8 is connected with the first electrode of described third transistor; The second line scanning control line that control pole and this image element circuit of described 8th transistor T8 are expert at is connected.
Described a kind of image element circuit with compensate function of the present invention, by increasing the 7th transistor T7 and the 8th transistor T8, described the first transistor T1 and third transistor T3 is used as double-grid structure, reduce further the leakage current of Section Point N2, weaken glimmer point problem further and improve display comparison degree.
The application also provides a kind of display circuit with compensate function simultaneously, comprises arbitrary described image element circuit in some above-described embodiments.
Obviously, above-described embodiment is only for clearly example being described, and the restriction not to embodiment.For those of ordinary skill in the field, can also make other changes in different forms on the basis of the above description.Here exhaustive without the need to also giving all embodiments.And thus the apparent change of extending out or variation be still among the protection domain of the invention.
Claims (6)
1. with an image element circuit for compensate function, it is characterized in that, comprising:
5th transistor T5, described 5th transistor T5 comprise control pole, the first electrode and the second electrode, and first electrode of described 5th transistor T5 is connected with the first power supply, and second electrode of described 5th transistor T5 forms first node N1;
First electric capacity C1, one end of described first electric capacity C1 is connected with the first power supply, and the other end of described first electric capacity C1 forms Section Point N2;
The first transistor T1, described the first transistor T1 comprise control pole, the first electrode and the second electrode, and first electrode of described the first transistor T1 is connected with described first node N1; Second electrode of described the first transistor T1 is directly or indirectly connected with the 3rd power supply; The third line scan control line that control pole and this image element circuit of described the first transistor T1 are expert at is connected;
Transistor seconds T2, described transistor seconds T2 comprise control pole, the first electrode and the second electrode, and first electrode of described transistor seconds T2 is connected with first node N1; The control pole of described transistor seconds T2 is connected with described Section Point N2;
Third transistor T3, described third transistor T3 comprise control pole, the first electrode and the second electrode, and first electrode of described third transistor T3 is directly or indirectly connected with described Section Point N2; Second electrode of described third transistor T3 is connected with described first node N1; The second line scanning control line that control pole and this image element circuit of described third transistor T3 are expert at is connected;
4th transistor T4, described 4th transistor T4 comprise control pole, the first electrode and the second electrode, and the fourth line scan control line that control pole and this image element circuit of described 4th transistor T4 are expert at is connected; First electrode of described 4th transistor T4 is connected with data line; Second electrode of described 4th transistor T4 is connected with second electrode of described transistor seconds T2;
6th transistor T6, described 6th transistor T6 comprises control pole, the first electrode and the second electrode, first electrode of described 6th transistor T6 is connected with second electrode of described transistor seconds T2, and the first row scan control line that control pole and this image element circuit of described 6th transistor T6 are expert at is connected;
Second electrode of described 6th transistor T6 is configured for the output terminal connecting dc electroluminescence device.
2. a kind of image element circuit with compensate function according to claim 1, it is characterized in that, also comprise the 7th transistor T7, described 7th transistor T7 comprises control pole, the first electrode and the second electrode, wherein, described first electrode of the 7th transistor T7 is connected with second electrode of the first transistor T1, and second electrode of described 7th transistor T7 is connected with the 3rd power supply; The third line scan control line that control pole and this image element circuit of described 7th transistor T7 are expert at is connected.
3. a kind of image element circuit with compensate function according to right 1 or 2, it is characterized in that, also comprise the 8th transistor T8, described 8th transistor T8 comprises control pole, the first electrode and the second electrode, wherein, first electrode of described 8th transistor T8 is connected with Section Point N2; Described second electrode of the 8th transistor T8 is connected with the first electrode of described third transistor; The second line scanning control line that control pole and this image element circuit of described 8th transistor T8 are expert at is connected.
4. a kind of image element circuit with compensate function according to claim 3, it is characterized in that, also comprise dc electroluminescence device, the positive pole of described dc electroluminescence device is connected with described output terminal, and the negative pole of described dc electroluminescence device is connected with second source.
5. according to a driving method for the arbitrary described image element circuit with compensate function of claim 1-4, it is characterized in that, the scan period of every row pixel is divided into first time period t1, the second time period t 2 and the 3rd time period t 3, wherein,
First time period t1, the third line scan control signal and the second line scanning control signal are low level, the first transistor T1 and third transistor T3 conducting by low level the third line scan control signal and the second line scanning control signal, the voltage of the 3rd power supply is provided to Section Point N2;
Second time period t 2, second line scanning control signal and fourth line scan control signal are low level, third transistor T3 and the 4th transistor T4 respond low level second line scanning control signal and fourth line scan control signal and conducting, by third transistor T3 by the transistor seconds T2 conducting that diode connects;
3rd time period t 3, the first row scan control signal transits to low level, 5th transistor T5 and the 6th transistor T6 is by the first row scan control signal and conducting, and the drive current that the first power supply provides flows to second source along the path through the 5th transistor T5, transistor seconds T2, the 6th transistor T6 and organic electroluminescence device.
6. with a display circuit for compensate function, it is characterized in that, comprise the arbitrary described image element circuit of some claim 1-4.
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Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
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| CN110634440A (en) * | 2019-08-27 | 2019-12-31 | 武汉华星光电半导体显示技术有限公司 | Pixel compensation circuit |
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| CN111223448A (en) * | 2019-09-16 | 2020-06-02 | 友达光电股份有限公司 | Pixel circuit |
| CN112397029A (en) * | 2020-11-17 | 2021-02-23 | 武汉华星光电半导体显示技术有限公司 | Pixel driving circuit and LTPO display panel |
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Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN106875894A (en) * | 2017-03-13 | 2017-06-20 | 京东方科技集团股份有限公司 | A kind of image element circuit and its driving method, display device |
| WO2018166312A1 (en) * | 2017-03-13 | 2018-09-20 | 京东方科技集团股份有限公司 | Pixel circuit, driving method therefor and display device |
| CN106875894B (en) * | 2017-03-13 | 2019-01-18 | 京东方科技集团股份有限公司 | A kind of pixel circuit and its driving method, display device |
| US11024228B2 (en) | 2017-03-13 | 2021-06-01 | Beijing Boe Optoelectronics Technology Co., Ltd. | Pixel circuit, driving method therefor and display device |
| WO2020048075A1 (en) * | 2018-09-07 | 2020-03-12 | Boe Technology Group Co., Ltd. | Pixel circuit, driving method, and display apparatus |
| CN110634440A (en) * | 2019-08-27 | 2019-12-31 | 武汉华星光电半导体显示技术有限公司 | Pixel compensation circuit |
| WO2021035942A1 (en) * | 2019-08-27 | 2021-03-04 | 武汉华星光电半导体显示技术有限公司 | Pixel compensation circuit |
| CN111223448A (en) * | 2019-09-16 | 2020-06-02 | 友达光电股份有限公司 | Pixel circuit |
| CN112397029A (en) * | 2020-11-17 | 2021-02-23 | 武汉华星光电半导体显示技术有限公司 | Pixel driving circuit and LTPO display panel |
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Effective date of registration: 20201214 Address after: No.146 Tianying Road, high tech Zone, Chengdu, Sichuan Province Patentee after: Chengdu CHENXIAN photoelectric Co.,Ltd. Address before: NO.320 Fuchunjiang Road, Optoelectronic Industrial Park, Kunshan Development Zone, Suzhou City, Jiangsu Province Patentee before: Kunshan New Flat Panel Display Technology Center Co.,Ltd. Patentee before: KunShan Go-Visionox Opto-Electronics Co.,Ltd. |