CN104726841A - Assistant temperature correction device and method for semiconductor film growth reaction chamber - Google Patents

Abstract

The invention discloses an assistant temperature correction device and method for a semiconductor film growth reaction chamber, belonging to the field of semiconductor manufacturing. According to the device and the method, the light intensity of a light source can be regulated to P0; since the temperature of a blackbody furnace target corresponding to P0 is T0, the light source is equivalent to a heat radiation source of which the temperature is T0; meanwhile, the maximum value P0' of the intensity of light of a light source, which is detected by a temperature detection device after the light of the light source penetrates through a slit window, is equivalent to the heat radiation intensity when the temperature in the reaction chamber is T0. When the assistant temperature correction device for the reaction chamber is used, a temperature detecting device in the reaction chamber is corrected under the condition that T0 and P0's are both known. The illuminant of the light source is a broadband spectrum halogen tungsten lamp. The light source is capable of simulating the blackbody radiation P0' when the temperature is T0, so as to provide support for the temperature correction of the reaction chamber. The broadband spectrum halogen tungsten lamp light source can realize high stable powder output and is capable of improving the correction stability.

Description

Semiconductor Film Growth reaction chamber auxiliary temperature calibrating installation and calibration steps

Technical field

The present invention relates to field of semiconductor manufacture, particularly a kind of semiconductor film reaction chamber auxiliary temperature calibrating installation and calibration steps.

Background technology

Temperature is the key parameter of Semiconductor Film Growth Properties Control.By the real-time monitoring to wafer temperature, can control by Optimization Technology, improve growth yield.Usually, Semiconductor Film Growth is carried out in the reactor chamber, needs strict reaction conditions, environment, high speed rotating etc. as active in high vacuum, high temperature, chemical property.Need to adopt non-contacting means measuring tempeature.

In order to improve thermometric precision and repeatability in production, more accurately control wafer to wafer, batch to batch and reaction chamber to the temperature deviation of reaction chamber, require regularly carry out temperature correction by easy method.Therefore, more high precision and calibration steps easy and simple to handle is extremely important is developed.

Summary of the invention

In order to solve the problem, the invention provides a kind of simple to operate and the Semiconductor Film Growth reaction chamber auxiliary temperature calibrating installation that cost is low and the calibration steps based on this calibrating installation.

Semiconductor film reaction chamber auxiliary temperature calibrating installation provided by the invention comprises light intensity detection device, light intensity adjusting device and light source,

Described light intensity detection device is for detecting blackbody furnace at target center temperature T ₀the thermal radiation P of lower described blackbody furnace target center ₀, and the light intensity of described light source,

Described light intensity adjusting device is used for regulating the light intensity that described light source sends, and when making described light source be in described blackbody furnace target center, the light intensity that light intensity detection device detects is P ₀,

After the light intensity regulating of described light source completes, described auxiliary temperature calibrating installation needs to move to the slit bottom of window of semiconductor film reaction chamber and carries out translation, is measured the largest light intensity P of described light source by the temperature measuring equipment of semiconductor film reaction chamber ₀＇.

Semiconductor film reaction chamber auxiliary temperature calibration steps provided by the invention realizes based on calibrating installation provided by the invention, comprises the following steps:

Light intensity detection device detection target center place temperature is T ₀the radiation light intensity P of blackbody furnace ₀;

Light source is arranged at described blackbody furnace target center place, regulates described light source, and the light intensity that described light intensity detection device is detected is P ₀;

Keep described light source luminescent light intensity constant, described light source is placed in the slit bottom of window of semiconductor film reaction chamber, by the light intensity of temperature detection device detection through light after described slit window;

Light source described in translation, until reach maximum value P through the light intensity of light after described slit window ₀＇, by described light intensity P ₀＇ is equivalent to semiconductor film reaction cavity temperature T ₀time, the caloradiance that described temperature detection device detects;

At known T ₀and P ₀under the condition of ＇, the temperature detection device of described semiconductor film reaction chamber is calibrated;

The twinkler of described light source is wide spectral halogen tungsten lamp.

Semiconductor film reaction chamber auxiliary temperature calibrating installation provided by the invention and calibration steps can by the light intensity regulating of light source to P ₀, due to P ₀the temperature of corresponding blackbody furnace target center is T ₀, therefore light source can be equivalent to a temperature is T ₀infrared source, now, the light source detected by temperature detection device is through the maximum value P of the light intensity of light after slit window ₀＇ is equivalent to semiconductor film reaction cavity temperature T ₀time caloradiance.When applying this semiconductor film reaction chamber auxiliary temperature calibrating installation, be equivalent at known T ₀and P ₀under the condition of ＇, the temperature measuring equipment of semiconductor film reaction chamber is calibrated.During owing to calibrating the temperature measuring equipment of semiconductor film reaction chamber, semiconductor film reaction cavity temperature T ₀with caloradiance P ₀＇ is all known, and therefore, this light source can analog temperature be T ₀time blackbody radiation P ₀＇, for the calibration of semiconductor film reaction chamber temperature provides support.In addition, what semiconductor film reaction chamber auxiliary temperature calibrating installation provided by the invention and calibration steps were selected is broad spectrum light source, and what the present invention selected is halogen tungsten lamp.It is the wideband light source of visible ray to infrared wavelength, has the blackbody radiation spectrum of the constant intensity between 300nm to 2600nm or 450nm and 5500nm.It has employed internal feedback system, can realize high stable power stage.Relative to narrow-band LED light source, described broad spectrum light source sufficient center wavelength accuracy, very little by such environmental effects such as temperature, color temperature shift is little: every degree Celsius of drift 0.1%, luminous power drift per hour 0.01%.And high-power narrow-band LED light source, centre wavelength is very large with envrionment temperature drift, is every degree Celsius of drift 0.3nm.If variation of ambient temperature about 10 degree, centre wavelength will be drifted about 3nm, is the LED light source of 30nm for bandwidth, and centre wavelength drift reaches 10%.Larger temperature error can be brought to temperature correction.And described broad spectrum light source in this respect stability obtain large raising.

Accompanying drawing explanation

Fig. 1 is the schematic diagram of Semiconductor Film Growth reaction chamber auxiliary temperature calibrating installation provided by the invention when applying;

Schematic diagram when Fig. 2 is the light intensity of light intensity detection device probe source;

Fig. 3 is the temperature at application light intensity detection device detection target center place is T ₀, thermal radiation is P ₀the structural representation of blackbody furnace;

Fig. 4 is the logic diagram of light source dimming circuits;

Fig. 5 is the schematic diagram after being substituted by the light source integrating sphere in Fig. 1;

Fig. 6 is the schematic diagram after being substituted by the light source integrating sphere in Fig. 2;

Fig. 7 is the structural representation adopting dual wavelength temperature measurement structure to measure film growth reaction chamber temperature;

Fig. 8 is the logic diagram of Semiconductor Film Growth reaction chamber auxiliary temperature calibration steps provided by the invention.

Embodiment

In order to understand the present invention in depth, below in conjunction with drawings and the specific embodiments, the present invention is described in detail.

See accompanying drawing 1 ~ 3, semiconductor film reaction chamber auxiliary temperature calibrating installation provided by the invention comprises light intensity detection device, light intensity adjusting device and light source, and light intensity detection device is for detecting blackbody furnace 13 at target center temperature T ₀the thermal radiation P of lower blackbody furnace 13 target center 15 ₀, and the light intensity of light source, light intensity adjusting device is used for regulating the light intensity that light source sends, and when making light source be in blackbody furnace 13 target center 15, the light intensity that light intensity detection device detects is P ₀, after the light intensity regulating of light source completes, carry out translation, by the largest light intensity P of temperature measuring equipment 2 measurement light source of semiconductor film reaction chamber bottom the slit window 1 that auxiliary temperature calibrating installation needs to move to semiconductor film reaction chamber ₀＇, wherein, the twinkler of light source 3 is wide spectral halogen tungsten lamps.

Semiconductor film reaction chamber auxiliary temperature calibrating installation provided by the invention can by the light intensity regulating of light source to P ₀, due to P ₀the temperature of corresponding blackbody furnace target center is T ₀, light source can be equivalent to a temperature is T ₀infrared source, now, the light source detected by temperature detection device is through the maximum value P of the light intensity of light after slit window 1 ₀＇ is equivalent to semiconductor film reaction cavity temperature T ₀time caloradiance.When applying this semiconductor film reaction chamber auxiliary temperature calibrating installation, be equivalent at known T ₀and P ₀under the condition of ＇, the temperature measuring equipment of semiconductor film reaction chamber is calibrated.During owing to calibrating the temperature measuring equipment of semiconductor film reaction chamber, semiconductor film reaction cavity temperature T ₀with caloradiance P ₀＇ is all known, and therefore, this light source can analog temperature be T ₀time blackbody radiation P ₀＇, for the calibration of semiconductor film reaction chamber temperature provides support.

In addition, what semiconductor film reaction chamber auxiliary temperature calibrating installation provided by the invention and calibration steps were selected is wide spectral halogen tungsten lamp, it is the wideband light source of visible ray to infrared wavelength, has the blackbody radiation spectrum of the constant intensity between 300nm to 2600nm or 450nm and 5500nm.It has employed internal feedback system, can realize high stable power stage.Relative to narrow-band LED light source, described broad spectrum light source sufficient center wavelength accuracy, very little by such environmental effects such as temperature, color temperature shift is little: every degree Celsius of drift 0.1%, luminous power drift per hour 0.01%.And high-power narrow-band LED light source, centre wavelength is very large with envrionment temperature drift, is every degree Celsius of drift 0.3nm.If variation of ambient temperature about 10 degree, centre wavelength will be drifted about 3nm, is the LED light source of 30nm for bandwidth, and centre wavelength drift reaches 10%.Larger temperature error can be brought to temperature correction.And semiconductor film reaction chamber provided by the invention due to the twinkler of light source 3 are this broad spectrum light sources of halogen tungsten lamp, stability obtains large raising in this respect.

See accompanying drawing 2, as a kind of concrete implementation of light intensity detection device, see accompanying drawing 3, now, tested point is the luminescence center of light source.Light intensity detection device comprises radiation receiving transducer 8, optical fiber 10, band pass filter 11 and detector 12.Built-in lens 9 focus of radiation receiving transducer 8 is in the luminescence center of light source; Radiation receiving transducer 8 is for receiving the thermal radiation of light source; Optical fiber 10 for by the thermal radiation transmission of light source to detector 12; Band pass filter 11 is placed between light intensity detector 12 and optical fiber 10, and band pass filter 11 centre wavelength is λ, passes through for the light making wavelength be in (λ-Δ λ, λ+Δ λ); Detector 12 is for the thermal radiation of probe source.Thus this light intensity detection device can adapt with light source, for the caloradiance P of probe source ₀.

Wherein, P ₀and the temperature T of the blackbody furnace target center of correspondence ₀obtained by the device shown in accompanying drawing 3, this device comprises light intensity detection device, blackbody furnace 13 and thermopair 14, and light intensity detection device is for detecting the thermal radiation P of blackbody furnace 13 target center 15 ₀, thermopair 14 embeds blackbody furnace 13 target center 15, for measuring the temperature T of blackbody furnace 13 target center 15 ₀.

In the apparatus, as a kind of concrete implementation of light intensity detection device, see accompanying drawing 2, now, tested point is the target center 15 of blackbody furnace 13.Light intensity detection device comprises radiation receiving transducer 8, optical fiber 10, band pass filter 11 and detector 12.Built-in lens 9 focus of radiation receiving transducer 8 is in the target center 15 of blackbody furnace 13; Radiation receiving transducer 8 is for receiving the thermal radiation of blackbody furnace 13; Optical fiber 10 for by the thermal radiation transmission of blackbody furnace 13 to detector 12; Band pass filter 11 is placed between light intensity detector 12 and optical fiber 10, and band pass filter 11 centre wavelength is λ, passes through for the light making wavelength be in (λ-Δ λ, λ+Δ λ); Detector 12 is for detecting the thermal radiation of blackbody furnace 13.Thus this light intensity detection device can adapt with blackbody furnace 13, for detecting the caloradiance P at blackbody furnace 13 target center 15 place ₀.

Wherein, also comprise light intensity adjusting device, regulate for the light intensity sent light source.During with light source simulating black body stove 13, need the thermal radiation P of light intensity and known blackbody furnace 13 target center 15 that light source is sent ₀identical, therefore, need the light intensity to light source sends to regulate, make the thermal radiation P of itself and known blackbody furnace 13 target center 15 ₀identical, therefore, need to introduce light intensity adjusting device.

See accompanying drawing 4, as a kind of concrete implementation of light intensity adjusting device, light intensity adjusting device comprises light source driving circuit, light source driving circuit comprises feedback detector, analog to digital converter, treater, digital to analog converter and wave filter, feedback detector is used for the current light intensity simulating signal of probe source, and the current light intensity simulating signal of light source is sent to analog to digital converter; Analog to digital converter is used for the current light intensity numerary signal current light intensity simulating signal of light source being converted to light source, then the current light intensity numerary signal of light source is sent to treater; Treater carries out data adjustment according to the current light intensity numerary signal of light source, the light intensity numerary signal after adjusted, and the light intensity numerary signal after regulating is sent to digital to analog converter; Digital to analog converter converts the light intensity numerary signal after adjustment to intensity control simulating signal after adjustment, and intensity control simulating signal driving light source is luminous with the light intensity control signal after adjustment; Wave filter is arranged between light source and feedback detector, in the present embodiment, near infrared or infrared stray light outside filtering thermometric wavelength region.Due to selecting of wave filter, outside the thermometric wavelength region that feedback detector can be made to receive, near infrared or infrared stray light are by filtering, photo-thermal amount near infrared or infra-red range is large, is easily detected also easily to obtain light intensity more accurately by regulating.Wherein, in order to avoid circuit at different levels between impedance mismatch and avoid disturbing each other, a buffer circuit can also be set in this light source driving circuit.

Carry out the concrete implementation of data adjustment according to the current light intensity numerary signal of light source as treater, when treater carries out data adjustment according to the current light intensity numerary signal of light source, the algorithm of employing is pid algorithm.It is simple that it has principle, is easy to realize, and widely applicable, controling parameters is separate, the advantage such as selected fairly simple of parameter; And can prove in theory, for the typical subject of process control--the control object of " first-order lag+purely retarded " and " second-order lag+purely retarded ", PID controller is a kind of optimum control, and the principle of work laminating degree of this algorithm and Semiconductor Film Growth reaction chamber auxiliary temperature calibration steps provided by the invention is higher.

See accompanying drawing 5 and accompanying drawing 6, semiconductor film reaction chamber auxiliary temperature calibration steps provided by the invention also comprises integrating sphere 7, integrating sphere 7 is at least provided with three ports, be respectively the first port, the second port and the 3rd port, light source is arranged on the first port, the light that light source sends penetrates via the second port, and light intensity detection device is arranged on the third port.In the second means of detection as shown in Figure 6, the light that light source 3 sends is after the first port enters integrating sphere, after being reflected many times by internal layer coated material, uniform light is sent to all angles, wherein a road is penetrated through the second port 4, and another road is fed detector 5 and detects after the 3rd port; As shown in Figure 7, when light source is placed in bottom the slit window 1 of semiconductor film reaction chamber, the slit window 1 of the light that light source sends directive semiconductor film reaction chamber after the second port 4 penetrates.Advantage on application integrating sphere 7 is the impact that the incident angle of light source, spatial distribution and polarization can be avoided to cause the intensity of the light sent by light luminescence center 4, uniformity coefficient, under the condition of this integrating sphere 7, the light that light source 3 sends through the light intensity of the second port 4 and the 3rd port be identical, that is, in such cases, in fact feedback detector 5 can detect the light intensity penetrated through the second port 4 exactly, thus, can be T for the calibration accurate simulation temperature of Subsequent semiconductor film reaction chamber ₀time blackbody radiation P ₀＇ provides support.In addition, integrating sphere 7 can also be four port design, wherein, port is as the luminescence center 4 of light source, two ports embed light source 3, and a remaining port then embeds feedback detector 5, now, need to regulate two light sources 3 simultaneously, now, this auxiliary temperature calibrating installation comprises secondary light source, and secondary light source is arranged on the 4th port, the light that secondary light source sends is also via the second port injection, and the light intensity regulating of the light sent from light source luminescent center 4 after making itself and light source 3 integrated is to P ₀.In the present embodiment, light source 3 sends light halfwidth 30nm, and the bandwidth of wave filter 6 is 10nm, and this wave filter 6 adopts isotropy filtering, and be less than the luminous minimum wavelength cut-off of light source 3 at wavelength, its all band passes through, thus can filtering interference of stray light effectively.

In the present embodiment, feedback detector 5 adopts photosensitive silicon photodetector or in-Ga-As photoelectric detector, the light intensity collected can not only be converted into electric current and directly enter control electric current, because it is to photaesthesia, also better to the filtering effect of the stray light outside near infrared or infra-red range.

Apply Semiconductor Film Growth reaction chamber auxiliary temperature calibrating installation provided by the invention and after calibrating semiconductor film growth response chamber, the real time temperature measurement method of film growth comprises the following steps:

Under differing temps, system acceptance specific band blackbody radiation intensity can represent with P (λ, T);

$P_0({\mathrm{\λ}}_1,T)={\∫}_{{\mathrm{\λ}}_1-{\mathrm{\Δ\λ}}_1}^{{\mathrm{\λ}}_1+{\mathrm{\Δ\λ}}_1}{f}_1\left(\mathrm{\λ}\right)g_1\left(\mathrm{\λ}\right)P(\mathrm{\λ},T)/\mathrm{\τ}\left(T\right)\mathrm{d\λ}$

$P_0({\mathrm{\λ}}_2,T)={\∫}_{{\mathrm{\λ}}_2-{\mathrm{\Δ\λ}}_2}^{{\mathrm{\λ}}_2+{\mathrm{\Δ\λ}}_2}{f}_2\left(\mathrm{\λ}\right)g_2\left(\mathrm{\λ}\right)P(\mathrm{\λ},T)/\mathrm{\τ}\left(T\right)\mathrm{d\λ}$

Wherein,

P ₀(λ ₁, T), the first wavelength X ₁corresponding thermal radiation power,

λ ₁, the first wavelength,

Δ λ ₁, the first wavelength X ₁corresponding bandwidth,

F ₁(λ), optical detector is in the first wavelength X ₁under response function,

G ₁(λ), the first wavelength X ₁corresponding radiant light in the transmitance of optics,

P (λ, T), the response spectrum of blackbody furnace,

τ (T), the expression formula of spectral transmissions curve, P ₀(λ ₂, T), the second wavelength X ₂corresponding thermal radiation power,

λ ₂, the second wavelength,

Δ λ ₂, the second wavelength X ₂corresponding bandwidth,

F ₂(λ), optical detector is in the second wavelength X ₂under response function,

G ₂(λ), the second wavelength X ₂corresponding radiant light in the transmitance of optics,

T, temperature,

Under measuring differing temps, the first wavelength X ₁corresponding actual thermal radiation power L (λ ₁, T), the second wavelength X ₂corresponding actual thermal radiation power L (λ ₂, T), and obtain actual thermal radiation ratio;

The value of a corresponding temperature T is substituted into

$L({\mathrm{\λ}}_1,T)=m_1\×{\∫}_{{\mathrm{\λ}}_1-{\mathrm{\Δ\λ}}_1}^{{\mathrm{\λ}}_1+{\mathrm{\Δ\λ}}_1}{f}_1\left(\mathrm{\λ}\right)g_1\left(\mathrm{\λ}\right)\mathrm{\ϵ}\left(\mathrm{\λ}\right)\×\frac{2\mathrm{\π}{\mathrm{hc}}^2/{\mathrm{\λ}}^5}{\exp \left(\frac{\mathrm{hc}}{\mathrm{kT\λ}}\right)-1}\mathrm{d\λ}$

$L({\mathrm{\λ}}_2,T)=m_2\×{\∫}_{{\mathrm{\λ}}_2-{\mathrm{\Δ\λ}}_2}^{{\mathrm{\λ}}_2+{\mathrm{\Δ\λ}}_2}{f}_2\left(\mathrm{\λ}\right)g_2\left(\mathrm{\λ}\right)\mathrm{\ϵ}\left(\mathrm{\λ}\right)\×\frac{2\mathrm{\π}{\mathrm{hc}}^2/{\mathrm{\λ}}^5}{\exp \left(\frac{\mathrm{hc}}{\mathrm{kT\λ}}\right)-1}\mathrm{d\λ}$

Obtain m respectively ₁and m ₂;

Wherein,

L (λ ₁, T), the first wavelength X ₁corresponding actual thermal radiation power,

L (λ ₂, T), the second wavelength X ₂corresponding actual thermal radiation power,

M ₁, the first wavelength X ₁corresponding calibration factor,

M ₂, the second wavelength X ₂corresponding calibration factor,

F ₁(λ), optical detector is in the first wavelength X ₁under response function,

G ₁(λ), the first wavelength X ₁corresponding radiant light in the transmitance of optics,

F ₂(λ), optical detector is in the second wavelength X ₂under response function,

G ₂(λ), the second wavelength X ₂corresponding radiant light in the transmitance of optics,

ε (λ), the emittance on epitaxial wafer surface,

T, temperature;

λ ₁, the first wavelength,

Δ λ ₁, the first wavelength X ₁corresponding bandwidth,

λ ₂, the second wavelength,

Δ λ ₂, the second wavelength X ₂corresponding bandwidth,

K, Boltzmann constant, k=1.3806 × 10 ^-23j/K,

H is for illuminating bright gram of constant, h=6.626 × 10 ^-34js,

C, light is velocity of propagation in a vacuum, c=3 × 10 ⁸m/s;

Temperature-measuring range is (T _min, T _max) be (400 DEG C, 1500 DEG C), the first wavelength X ₁corresponding high-temperature interval (T _down, T _max), the second wavelength X ₂corresponding low temperature interval (T _min, T _up), temperature transition interval is (T _up, T _down).Wherein, T _min< T _down< T _up< T _max;

When film growth reaction chamber is in cryogenic temperature interval, measure the first wavelength X ₁corresponding actual thermal radiation power L (λ ₁, T), according to $L({\mathrm{\&lambda;}}_1,T)=m_1\&times;{\&Integral;}_{{\mathrm{\&lambda;}}_1-{\mathrm{\&Delta;\&lambda;}}_1}^{{\mathrm{\&lambda;}}_1+{\mathrm{\&Delta;\&lambda;}}_1}{f}_1\left(\mathrm{\&lambda;}\right)g_1\left(\mathrm{\&lambda;}\right)\mathrm{\&epsiv;}\left(\mathrm{\&lambda;}\right)\&times;\frac{2\mathrm{\&pi;}{\mathrm{hc}}^2/{\mathrm{\&lambda;}}^5}{\exp \left(\frac{\mathrm{hc}}{\mathrm{kT\&lambda;}}\right)-1}\mathrm{d\&lambda;}$ Calculate the temperature of MOCVD reaction chamber;

When film growth reaction chamber is in high-temperature temperature interval, measure the first wavelength X ₂corresponding actual thermal radiation power L (λ ₂, T), according to $L({\mathrm{\&lambda;}}_2,T)=m_2\&times;{\&Integral;}_{{\mathrm{\&lambda;}}_2-{\mathrm{\&Delta;\&lambda;}}_2}^{{\mathrm{\&lambda;}}_2+{\mathrm{\&Delta;\&lambda;}}_2}{f}_2\left(\mathrm{\&lambda;}\right)g_2\left(\mathrm{\&lambda;}\right)\mathrm{\&epsiv;}\left(\mathrm{\&lambda;}\right)\&times;\frac{2\mathrm{\&pi;}{\mathrm{hc}}^2/{\mathrm{\&lambda;}}^5}{\exp \left(\frac{\mathrm{hc}}{\mathrm{kT\&lambda;}}\right)-1}\mathrm{d\&lambda;}$ Calculate the temperature of film growth reaction chamber;

When film growth reaction chamber is in temperature transition interval, measure the first wavelength X ₁corresponding actual thermal radiation power L (λ ₁, T ₁), according to $L({\mathrm{\&lambda;}}_1,T_1)=m_1\&times;{\&Integral;}_{{\mathrm{\&lambda;}}_1-{\mathrm{\&Delta;\&lambda;}}_1}^{{\mathrm{\&lambda;}}_1+{\mathrm{\&Delta;\&lambda;}}_1}{f}_1\left(\mathrm{\&lambda;}\right)g_1\left(\mathrm{\&lambda;}\right)\mathrm{\&epsiv;}\left(\mathrm{\&lambda;}\right)\&times;\frac{2\mathrm{\&pi;}{\mathrm{hc}}^2/{\mathrm{\&lambda;}}^5}{\exp \left(\frac{\mathrm{hc}}{\mathrm{kT\&lambda;}}\right)-1}\mathrm{d\&lambda;}$ Calculate the temperature of MOCVD reaction chamber; Measure the second wavelength X ₂corresponding actual thermal radiation power L (λ ₂, T ₂), according to $L({\mathrm{\&lambda;}}_2,T_2)=m_2\&times;{\&Integral;}_{{\mathrm{\&lambda;}}_2-{\mathrm{\&Delta;\&lambda;}}_2}^{{\mathrm{\&lambda;}}_2+{\mathrm{\&Delta;\&lambda;}}_2}{f}_2\left(\mathrm{\&lambda;}\right)g_2\left(\mathrm{\&lambda;}\right)\mathrm{\&epsiv;}\left(\mathrm{\&lambda;}\right)\&times;\frac{2\mathrm{\&pi;}{\mathrm{hc}}^2/{\mathrm{\&lambda;}}^5}{\exp \left(\frac{\mathrm{hc}}{\mathrm{kT\&lambda;}}\right)-1}\mathrm{d\&lambda;}$ Calculate the temperature of film growth reaction chamber; Finally, transition silicon carbide if T ₁=T ₂, survey T=T ₁=T ₂.

Wherein,

L (λ ₁, T), the first wavelength X ₁corresponding actual thermal radiation power,

L (λ ₂, T), the second wavelength X ₂corresponding actual thermal radiation power,

M ₁, the first wavelength X ₁corresponding calibration factor,

M ₂, the second wavelength X ₂corresponding calibration factor,

F ₁(λ), optical detector is in the first wavelength X ₁under response function,

G ₁(λ), the first wavelength X ₁corresponding radiant light in the transmitance of optics,

F ₂(λ), optical detector is in the second wavelength X ₂under response function,

G ₂(λ), the second wavelength X ₂corresponding radiant light in the transmitance of optics,

ε (λ), the emittance on epitaxial wafer surface,

T, temperature;

λ ₁, the first wavelength,

Δ λ ₁, the first wavelength X ₁corresponding bandwidth,

λ ₂, the second wavelength,

Δ λ ₂, the second wavelength X ₂corresponding bandwidth,

T _min, temperature measurement range lower limit,

T _max, the temperature measurement range upper limit,

T _down, temperature transition interval limit,

T _up, the interval upper limit of temperature transition,

K, Boltzmann constant, k=1.3806 × 10 ^-23j/K,

H is for illuminating bright gram of constant, h=6.626 × 10 ^-34js,

C, light is velocity of propagation in a vacuum, c=3 × 10 ⁸m/s.

See accompanying drawing 7, self-alignment a kind of device for realizing this film growth real time temperature measurement method comprises film growth reaction chamber and optical detector 2, film growth reaction chamber comprises epitaxial wafer 18, heating chamber 16 and graphite base 17, graphite base 17 is for carrying epitaxial wafer 18, heating chamber 16 for heating graphite base 17, and then heats epitaxial wafer 18; The top of film growth reaction chamber is provided with slit window 1, and optical detector 2 sends wavelength by slit window 1 to epitaxial wafer 18 and is respectively λ ₁and λ ₂detecting light beam, light beam epitaxial wafer 18 reflects the reflected beam of rear formation by optical detection part detection.

Wherein, Semiconductor Film Growth reaction chamber auxiliary temperature calibrating installation provided by the invention can also comprise temperature sensor and cooling system, be provided with startup threshold value in cooling system, temperature sensor is used for the temperature of proofing unit, and the temperature signal detected is sent to cooling system; Temperature is prescribed a time limit higher than starting the upper of threshold value, and cooling system is started working, and cools device, and when temperature is prescribed a time limit lower than starting the lower of threshold value, cooling system is braked.Thus, Semiconductor Film Growth reaction chamber auxiliary temperature calibrating installation provided by the invention can be worked under stable environment.

See accompanying drawing 8, semiconductor film reaction chamber auxiliary temperature calibration steps provided by the invention comprises the following steps:

Step 1: as shown in Figure 2, light intensity detection device detection target center 15 place temperature is T ₀the radiation light intensity P of blackbody furnace 13 ₀;

Step 2: as shown in Figure 3, light source is arranged at blackbody furnace 13 target center 15 place to light, regulate light source, the light intensity that light intensity detection device is detected is P ₀;

Step 3: keep light source luminescent light intensity constant, bottom the slit window 1 light source being placed in semiconductor film reaction chamber, as shown in Figure 4, detects the light intensity through light after slit window 1 by temperature detection device 2;

Step 4: translation light source, until reach maximum value P through the light intensity of light after slit window 1 ₀＇, by light intensity P ₀＇ is equivalent to semiconductor film reaction cavity temperature T ₀time, the caloradiance that temperature detection device 2 detects;

At known T ₀and P ₀under the condition of ＇, the temperature detection device of semiconductor film reaction chamber is calibrated.

First semiconductor film reaction chamber auxiliary temperature calibration steps provided by the invention utilizes the first means of detection shown in accompanying drawing 2 be combined into by light intensity detection device and blackbody furnace to calibrate and blackbody furnace 13 target center 15 temperature T ₀corresponding blackbody furnace 13 radiation light intensity P ₀, recycle the second means of detection shown in accompanying drawing 3 become with combination of light sources by light intensity detection device and regulate the light intensity of light source to known P ₀, light source can be equivalent to a temperature is T ₀infrared source, bottom the slit the window 1 afterwards light source regulating light intensity being placed in semiconductor film reaction chamber, and the largest light intensity P of light that will now detect after semiconductor film reaction chamber ₀＇ is equivalent to semiconductor film reaction cavity temperature T ₀time temperature detection device 2 caloradiance that detects, finally, at known T ₀and P ₀under the condition of ＇, the temperature detection device of semiconductor film reaction chamber is calibrated.During owing to calibrating the temperature detection device of semiconductor film reaction chamber, semiconductor film reaction cavity temperature T ₀with caloradiance P ₀＇ is all known, and therefore, this light source can analog temperature be T ₀time blackbody radiation P ₀＇, for the calibration of semiconductor film reaction chamber temperature is offered help.

Above embodiment; object of the present invention, technical scheme and beneficial effect are further described; be understood that; these are only the specific embodiment of the present invention; be not limited to the present invention; within the spirit and principles in the present invention all, any amendment made, equivalent replacement, improvement etc., all should be included within protection scope of the present invention.

Claims (10)

1. semiconductor film reaction chamber auxiliary temperature calibrating installation, is characterized in that, comprises light intensity detection device, light intensity adjusting device and light source,

Described light intensity detection device is for detecting blackbody furnace at target center temperature T ₀the thermal radiation P of lower described blackbody furnace target center ₀, and the light intensity of described light source,

Described light intensity adjusting device is used for regulating the light intensity that described light source sends, and when making described light source be in described blackbody furnace target center, the light intensity that light intensity detection device detects is P ₀,

After the light intensity regulating of described light source completes, described auxiliary temperature calibrating installation needs to move to the slit bottom of window of semiconductor film reaction chamber and carries out translation, is measured the largest light intensity P of described light source by the temperature measuring equipment of semiconductor film reaction chamber ₀＇;

The twinkler of described light source is wide spectral halogen tungsten lamp.

2. auxiliary temperature calibrating installation according to claim 1, is characterized in that, the temperature T of described blackbody furnace target center ₀obtained by thermopair, described thermopair embeds described blackbody furnace target center, for measuring the temperature T of described blackbody furnace target center ₀.

3. auxiliary temperature calibrating installation according to claim 1 and 2, is characterized in that, described light intensity detection device comprises radiation receiving transducer, optical fiber, band pass filter and detector,

The built-in lens focus of described radiation receiving transducer is in tested point;

Described radiation receiving transducer is for receiving the thermal radiation of described tested point;

Described optical fiber is used for the thermal radiation transmission of described tested point to described detector;

Described band pass filter is placed between described light intensity detector and described optical fiber, and described band pass filter centre wavelength is λ, passes through for the light making wavelength be in (λ-Δ λ, λ+Δ λ);

Described detector is for detecting the thermal radiation of described tested point.

4. auxiliary temperature calibrating installation according to claim 1, is characterized in that, described light intensity adjusting device comprises light source driving circuit, and described light source driving circuit comprises analog to digital converter, treater, digital to analog converter and wave filter,

The current light intensity simulating signal of described light source is sent to described analog to digital converter by described light intensity detection device;

Described analog to digital converter is used for the current light intensity numerary signal current light intensity simulating signal of described light source being converted to light source, then the current light intensity numerary signal of described light source is sent to described treater;

Described treater carries out data adjustment according to the current light intensity numerary signal of described light source, the light intensity numerary signal after adjusted, and the light intensity numerary signal after described adjustment is sent to described digital to analog converter;

Described digital to analog converter converts the light intensity numerary signal after described adjustment to intensity control simulating signal after adjustment, and described intensity control simulating signal drives described light source luminous with the light intensity control signal after described adjustment;

Described wave filter is arranged between described light source and described feedback detector.

5. auxiliary temperature calibrating installation according to claim 4, is characterized in that, when described treater carries out data adjustment according to the current light intensity numerary signal of described light source, the algorithm of employing is pid algorithm.

6. auxiliary temperature calibrating installation according to claim 1, it is characterized in that, also comprise integrating sphere, described integrating sphere is provided with three ports, be respectively the first port, the second port and the 3rd port, described light source is arranged on the first port, and the light that described light source sends is via described second port injection, and described light intensity detection device is arranged on described 3rd port.

7. auxiliary temperature calibrating installation according to claim 6, it is characterized in that, described integrating sphere also comprises the 4th port, described auxiliary temperature calibrating installation comprises secondary light source, described secondary light source is arranged on described 4th port, and the light that described secondary light source sends is also via described second port injection.

8. auxiliary temperature calibrating installation according to claim 5, is characterized in that, the centre wavelength of described wave filter is near infrared range.

9. auxiliary temperature calibrating installation according to claim 1, is characterized in that, also comprises temperature sensor and cooling system, is provided with startup threshold value in described cooling system,

The temperature signal detected for detecting the temperature of described device, and is sent to described cooling system by described temperature sensor;

Described temperature is prescribed a time limit higher than the upper of described startup threshold value, and described cooling system is started working, and cools described device, when described temperature is prescribed a time limit lower than the lower of described startup threshold value, and described cooling system braking.

10., based on the semiconductor film reaction chamber auxiliary temperature calibration steps of described auxiliary temperature calibrating installation arbitrary in claim 1 ~ 9, it is characterized in that, comprise the following steps:

Light intensity detection device detection target center place temperature is T ₀the radiation light intensity P of blackbody furnace ₀;

Light source is arranged at described blackbody furnace target center place, regulates described light source, and the light intensity that described light intensity detection device is detected is P ₀;

Keep described light source luminescent light intensity constant, described light source is placed in the slit bottom of window of semiconductor film reaction chamber, by the light intensity of temperature detection device detection through light after described slit window;

Light source described in translation, until reach maximum value P through the light intensity of light after described slit window ₀＇, by described light intensity P ₀＇ is equivalent to semiconductor film reaction cavity temperature T ₀time, the caloradiance that described temperature detection device detects;

At known T ₀and P ₀under the condition of ＇, the temperature detection device of described semiconductor film reaction chamber is calibrated.