CN104716195A - Molybdenum-doped zinc oxide thin film transistor and preparation method thereof - Google Patents
Molybdenum-doped zinc oxide thin film transistor and preparation method thereof Download PDFInfo
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- CN104716195A CN104716195A CN201510111273.8A CN201510111273A CN104716195A CN 104716195 A CN104716195 A CN 104716195A CN 201510111273 A CN201510111273 A CN 201510111273A CN 104716195 A CN104716195 A CN 104716195A
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Abstract
The invention provides a molybdenum-doped zinc oxide thin film transistor and a preparation method thereof and belongs to the field of the semiconductor industry and panel display. Molybdenum-doped zinc oxide semiconductor materials are adopted as a conducting channel layer of the thin film transistor, the size of a prepared molybdenum-doped zinc oxide thin film is about 20 nm, the molybdenum-doped zinc oxide thin film is prepared through the sputtering technology in the preparation process, and the characteristics of the switch ratio, subthreshold swing, threshold voltage and the migration rate of the thin film transistor are improved by adjusting components of molybdenum-doped zinc oxide target materials and controlling the sputtering oxygen partial pressure. The molybdenum-doped zinc oxide thin film transistor and the preparation method thereof have the advantages of being simple in process, low in manufacturing cost, low in temperature, suitable for the transparent display technology and the flexible display technology, and the like.
Description
Technical field
The present invention relates to thin-film transistor prepared by a kind of glass substrate or plastic, belong to semicon industry, flat display field.
Background technology
Along with the develop rapidly of information age, the direction that display device is just accelerating to panelized, energy-saving is fast-developing, and the active array driving display part being wherein switch element with thin-film transistor (TFT) becomes the outstanding person in numerous flat panel display.TFT is a kind of field-effect semiconductor device, and comprise several important component parts such as substrate, semiconductor channel layer, insulating barrier, grid and source-drain electrode, wherein semiconductor channel layer has vital effect to device performance and manufacturing process.The nearest more than ten years, using the TFT of amorphous silicon and polysilicon as driver element, little with volume on liquid crystal display device, lightweight, quality advantages of higher obtains and develops rapidly, and becomes the Message Display Terminal of main flow.But amorphous silicon exists that field-effect mobility is low, light sensitivity is strong, the shortcomings such as complicated process of preparation.The development of flat-panel monitor focuses on searching new material again, and make high mobility, low cost, high performance thin-film transistor, to meet on the track of technical development.
At present, research is more popular is with the organic semiconducting materials such as the pentacene OTFT (OTFT) that is channel layer and the oxide thin film transistor that take ZnO as the broad-band gap oxide semiconductor of representative is channel layer.It is simple that OTFT has technique, the advantages such as processing temperature is low, cost compare is low, and these advantages adapt to the requirement of social development and technological progress.But the OTFT of report is difficult to again overcome the low life-span, the weakness such as low mobility at present.It is the all-transparent TFT of channel layer that American scientist Hoffman in 2003 etc. report with ZnO, points out can be applied in driven with active matrix display simultaneously, causes people's extensive concern.
Oxide thin film transistor (English: oxide thin-film transistor (TFT)) is a kind of specific type of field effect transistor, and this technology is deposited on semiconductor active layer and dielectric layer on the substrate made in the form of a film.The main distinction of oxide thin film transistor and amorphous silicon film transistor is the material of electron channel is oxide instead of amorphous silicon.Thin-film transistor is mainly used in liquid crystal display (LCD) and organic luminous semiconductor (OLED).Why zinc oxide semiconductor thin film material is subject to extensive concern: preparation temperature is low, technique is simple, transparency is high, electric property is good, non-toxic environment-friendlymaterial material, cost are low.
At present, the research about Zinc oxide based semiconductor thin-film material has a lot, adopts the Zinc oxide based film transistor of different doping to emerge in an endless stream especially.Common are indium zinc oxide gallium (Indium Gallium Zinc Oxide, IGZO), zinc oxide aluminum (ZnO+Al
2o
3, AZO), indium zinc oxide (ZnO+In
2o
3, IZO), zinc-tin oxide (ZnO+SnO
2, TZO), zinc-gallium oxide (ZnO+Ga
2o
3, GZO) etc.Wherein, due to the matched of In and Ga, IGZO is considered to the most promising transparent conductor material, but the In in material is rare element, and on the earth, content is rare, In and Ga element is all poisonous again, and manufacturing cost is high and not environmentally.
Summary of the invention
The object of the present invention is to provide a kind of manufacture method preparing zinc oxide molybdenum film transistor on glass or plastic.This preparation method's processing step is simple, cheap for manufacturing cost, is applicable to low temperature process, and can the simple and effective properties improving thin-film transistor.
Technical scheme of the present invention is as follows:
A kind of thin-film transistor, comprise substrate, gate electrode, gate dielectric layer, semiconductor channel layer, source electrode, drain terminal electrode, described gate electrode is positioned at substrate, described gate dielectric layer is positioned on gate electrode, described semiconductor channel layer is positioned on gate dielectric layer, and described source electrode, drain terminal electrode, at semiconductor channel layer two ends, is characterized in that, described semiconductor channel forms by utilizing sputtering technology to prepare the doping molybdenum zinc oxide semi-conducting material formed, and the content of molybdenum is 1%-10%.
The preparation method of above-mentioned thin-film transistor, comprises the following steps:
(1) on glass or plastic, grow layer of conductive film, chemical wet etching goes out gate electrode.
(2) and then grow one deck gate dielectric membrane, chemical wet etching goes out gate dielectric layer.
(3) grow the zinc oxide semiconductor material that one deck mixes molybdenum, chemical wet etching goes out conductivity channel layer.
(4) grow layer of conductive film, chemical wet etching goes out source, drain electrode.
(5) grow one deck passivation dielectric layer, photoetching and etching form the fairlead of grid, source and leakage.
(6) grow layer of metal film, photoetching and etching form metal electrode and interconnection.
Described manufacture method, the conductive film that step (1) grows, is formed by transparent conductive film material ITO, GZO, Mo etc.
Described manufacture method, the gate dielectric material that step (2) grows, by silicon dioxide, or the insulating material such as silicon nitride, aluminium oxide, zirconia, hafnium oxide is formed.
Described manufacture method, the semiconductor channel layer that step (3) grows, utilize sputtering technology to grow zinc oxide amorphous semiconductor material channel layer that one deck mixes molybdenum.The target that sputtering uses is the zinc-oxide ceramic target of mixing molybdenum, and the content of molybdenum is 1%-10%; Controlling oxygen partial pressure in sputter procedure is 0%-30%.
Described manufacture method, the conductive film that step (4) grows, is formed by transparent conductive material ITO.
Advantage of the present invention and good effect: the invention provides a kind of manufacture method preparing zinc oxide molybdenum film transistor on glass or plastic, the doping molybdenum zinc oxide semiconductive thin film crystallite dimension of preparation is at about 20nm, film is uniformly distributed, and belongs to nanocrystalline category.It is simple that this process has step, cheap for manufacturing cost, the feature that uniformity is good, be applicable to low temperature process, to the performance improving film transistor device, there is good effect, the electric properties such as the mobility of device, on-off ratio, threshold voltage, subthreshold amplitude of oscillation rate can be improved, be applicable to Transparence Display and flexible display technologies.
Accompanying drawing explanation
The cross-sectional view of zinc oxide molybdenum film transistor prepared by the glass of Fig. 1 described by instantiation of the present invention or plastic;
The plan structure schematic diagram of zinc oxide molybdenum film transistor prepared by the glass of Fig. 2 described by instantiation of the present invention or plastic;
Fig. 3 (a) ~ (e) sequentially show the main technological steps of a thin-film transistor of the present invention manufacture method, wherein:
Fig. 3 (b) illustrates the processing step that gate electrode is formed;
Fig. 3 (c) illustrates the processing step that gate dielectric layer is formed;
Fig. 3 (d) illustrates the processing step that channel layer is formed;
Fig. 3 (e) illustrates the processing step that source and drain electrode is formed.
Embodiment
Below by example, the present invention will be further described.It should be noted that the object announcing example is to help to understand the present invention further, but it will be appreciated by those skilled in the art that: in the scope not departing from the present invention and claims, various substitutions and modifications are all possible.Therefore, the present invention should not be limited to the content disclosed in example, and the scope that the scope of protection of present invention defines with claims is as the criterion.
Zinc oxide molybdenum film transistor of the present invention is formed in glass or plastic 1, as depicted in figs. 1 and 2.This thin-film transistor comprises gate electrode 2, gate dielectric layer 3, semiconductor conducting channel layer 4, source and drain electrode 5.Described gate electrode 2 is positioned on glass or plastic 1, and described gate dielectric layer 3 is positioned on electrode 2, and described semiconductor conducting channel layer 4 is positioned on gate dielectric layer 3, and described source and drain termination electrode 5 is positioned at semiconductor channel layer 4 two ends.
The instantiation of the manufacture method of described thin-film transistor, by shown in Fig. 3 (a) to Fig. 3 (e), comprises the following steps:
As shown in Fig. 3 (a), substrate selects clear glass or plastic substrate 1.
As shown in Fig. 3 (b), adopt magnetron sputtering technique to grow the conductive films such as the ITO of one deck 30 ~ 150 nanometer thickness on substrate 1, then chemical wet etching goes out gate electrode.
As shown in Fig. 3 (c), utilize PECVD to grow the insulating barriers such as the silicon dioxide of one deck 50 ~ 250 nanometer thickness, then chemical wet etching forms gate medium.
As shown in Fig. 3 (d), utilize sputtering technology to grow zinc oxide semiconductor material channel layer that one deck mixes molybdenum.The target that sputtering uses is the zinc-oxide ceramic target of mixing molybdenum, and the content of molybdenum is 1%-10%; Controlling oxygen partial pressure in sputter procedure is 0%-30%.
As shown in figure (e), adopt magnetron sputtering technique to grow the conductive films such as the ITO of one deck 50 ~ 300 nanometer thickness, then chemical wet etching forms source, drain electrode.
Grow one deck passivation dielectric layer according to standard technology subsequently, photoetching and etching form the fairlead of grid, source and leakage, regrowth one deck Al or transparent conductive film material, and photoetching and etching form electrode and interconnection.
Although the present invention discloses as above with preferred embodiment, but and be not used to limit the present invention.Any those of ordinary skill in the art, do not departing under technical solution of the present invention ambit, the Method and Technology content of above-mentioned announcement all can be utilized to make many possible variations and modification to technical solution of the present invention, or be revised as the Equivalent embodiments of equivalent variations.Therefore, every content not departing from technical solution of the present invention, according to technical spirit of the present invention to any simple modification made for any of the above embodiments, equivalent variations and modification, all still belongs in the scope of technical solution of the present invention protection.
Claims (10)
1. a thin-film transistor, comprise substrate, gate electrode, gate dielectric layer, semiconductor channel layer, source electrode, drain terminal electrode, described gate electrode is positioned at substrate, described gate dielectric layer is positioned on gate electrode, described semiconductor channel layer is positioned on gate dielectric layer, and described source electrode, drain terminal electrode, at semiconductor channel layer two ends, is characterized in that, described semiconductor channel forms by utilizing sputtering technology to prepare the doping molybdenum zinc oxide semi-conducting material formed, and the content of molybdenum is 1%-10%.
2. thin-film transistor as claimed in claim 1, it is characterized in that, described substrate is clear glass or flexible plastic substrate.
3. thin-film transistor as claimed in claim 1, is characterized in that, described gate electrode adopts electric conducting material ITO, GZO or Mo.
4. thin-film transistor as claimed in claim 1, is characterized in that, described gate insulation dielectric layer is by silicon dioxide, or silicon nitride, aluminium oxide, zirconia or hafnium oxide are formed.
5. thin-film transistor as claimed in claim 1, it is characterized in that, described source, drain electrode are formed by conductive film material ITO, GZO or Mo.
6. the preparation method of thin-film transistor as claimed in claim 1, comprises the following steps:
1) first deposit layer of conductive film material on glass or plastic, chemical wet etching forms gate electrode;
2) grow one deck gate dielectric layer, chemical wet etching forms gate dielectric layer;
3) grow the zinc oxide semiconductor material that one deck mixes molybdenum, then chemical wet etching forms semiconductor channel layer pattern;
4) deposit layer of conductive film material, then chemical wet etching forms source, drain electrode patterns;
5) grow one deck passivation dielectric layer, photoetching and etching form the fairlead of grid, source and leakage;
6) grow layer of metal film, photoetching and etching form metal electrode and interconnection, finally form thin-film transistor.
7. the manufacture method of thin-film transistor as claimed in claim 6, is characterized in that step (1) adopts sputtering technology to grow one deck ITO, GZO or Mo conductive film material.
8. the manufacture method of thin-film transistor as claimed in claim 6, is characterized in that step (2) PECVD grows layer of silicon dioxide or silicon nitride or adopts ALD to grow one deck aluminium oxide, zirconia or hafnium oxide and makes gate dielectric layer.
9. the manufacture method of thin-film transistor as claimed in claim 6, the zinc oxide semiconductor material channel layer that it is characterized in that step (3) utilizing sputtering technology to grow one deck mixes molybdenum, the target that sputtering uses is the zinc-oxide ceramic target of mixing molybdenum, and controlling oxygen partial pressure in sputter procedure is 0-30%.
10. the manufacture method of thin-film transistor as claimed in claim 6, is characterized in that step (4) deposit one deck ITO, GZO or Mo conductive film material.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112447855A (en) * | 2019-09-03 | 2021-03-05 | 北京大学 | Preparation method of thin film transistor |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120012835A1 (en) * | 2010-07-14 | 2012-01-19 | Gregory Herman | Metal Oxide Semiconductor Thin Film Transistors |
| CN102351528A (en) * | 2011-09-28 | 2012-02-15 | 华南理工大学 | Lanthanum boride-doped oxide semiconductor material and application thereof |
| CN103258743A (en) * | 2012-02-15 | 2013-08-21 | 乐金显示有限公司 | Thin film transistor, thin film transistor array substrate and method of fabricating same |
| CN104022160A (en) * | 2014-06-20 | 2014-09-03 | 华北水利水电大学 | Zinc-oxide-based semiconductor material and thin film transistor doped with high-valence transition metal |
-
2015
- 2015-03-13 CN CN201510111273.8A patent/CN104716195A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20120012835A1 (en) * | 2010-07-14 | 2012-01-19 | Gregory Herman | Metal Oxide Semiconductor Thin Film Transistors |
| CN102351528A (en) * | 2011-09-28 | 2012-02-15 | 华南理工大学 | Lanthanum boride-doped oxide semiconductor material and application thereof |
| CN103258743A (en) * | 2012-02-15 | 2013-08-21 | 乐金显示有限公司 | Thin film transistor, thin film transistor array substrate and method of fabricating same |
| CN104022160A (en) * | 2014-06-20 | 2014-09-03 | 华北水利水电大学 | Zinc-oxide-based semiconductor material and thin film transistor doped with high-valence transition metal |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112447855A (en) * | 2019-09-03 | 2021-03-05 | 北京大学 | Preparation method of thin film transistor |
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