CN104714050B - A kind of three axle capacitor MEMS acceleration sensors and preparation method - Google Patents
A kind of three axle capacitor MEMS acceleration sensors and preparation method Download PDFInfo
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- CN104714050B CN104714050B CN201510099630.3A CN201510099630A CN104714050B CN 104714050 B CN104714050 B CN 104714050B CN 201510099630 A CN201510099630 A CN 201510099630A CN 104714050 B CN104714050 B CN 104714050B
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Abstract
The problem of monopolizing for American-European countries and embargo high-precision MEMS acceleration transducers, the present invention provide a kind of three axle capacitor MEMS acceleration sensors and preparation method：Acceleration transducer of the present invention includes SOI silicon chips, acceleration sensitive quality module unit and glass substrate.The acceleration sensitive quality module unit is made up of horizontal axis detection unit and parallel-plate detection unit two parts.Preparation method of the present invention, including for nine the highly doped polysilicon of piece, first time photoetching, second of photoetching, the bonding of silicon glass, third time photoetching, deposition, four mask, the 5th photoetching and structure release steps.Advantageous effects are：Acceleration transducer of the present invention has used same acceleration sensitive quality module unit, realizes and 3-axis acceleration is detected without cross jamming.With long-time stability and preferable reliability, can meet the needs of special is to acceleration detection.
Description
Technical field
The invention belongs to sensor preparing technical field, more particularly to it is a kind of it is based on SOI technology, can be applied to military project neck
Triple axle acceleration transducer in domain, auto industry and other consumer electronics products, it is specially a kind of three axle condenser types
MEMS acceleration transducers and preparation method.Detection of its technical scheme to 3-axis acceleration.
Background technology
MEMS is the essential part of following weapon, is support technology and key technology in following military issue weapons equipment, state
MEMS sensor is applied in guided missile and missile release system, intellectual weapon system by outer tried to be the first.U.S. Department of Defense is advanced to grind
Study carefully Plan Bureau（DARPA）The emerging technology that MEMS technology is confirmed as being badly in need of development in the U.S., just promote MEMS sensor in emphasis
Project.
MEMS inertia devices can provide a kind of economic guidance system for seeker, use MEMS inertia systems can be with
The reliability, performance and service time of guided missile is set to improve 5 ~ 10 times, the order of magnitude of duds reduces an order of magnitude, applied to dexterity
MEMS inertial sensor in bullet and earth penetrator, its shock resistance are enough after can accomplishing that bullet pierces underground, still
It can be guided, be controlled and be ignited.
Mems accelerometer is the basic device of inertial sensor series of products, it is necessary to special MEMS process technologies,
With compared with high-tech threshold.American-European and Japanese enterprises have monopolized the high-end accelerometer device market in the whole world substantially at present.And by
Industry, the western countries such as military and Aero-Space can be used for forbid such technology always to Chinese exports in accelerometer.Development
The MEMS sensor of independent intellectual property right, MEMS sensor technology is promoted to be to maintain army's skill in the rapid application of military field
Art advantage, the grand strategy safeguarded national security.
The present invention utilizes SOI technology, and tri- axles of X, Y and Z are detected respectively using same acceleration sensitive quality module unit
To acceleration, it is simple in terms of the preparation technology of the 3 axis MEMS acceleration transducer, can and the signal of acceleration transducer examine
Slowdown monitoring circuit is integrated to have long-time stability and preferable reliability on the same chip, can meet that special is examined to acceleration
The demand of survey, to realize that the production domesticization of high-precision MEMS acceleration transducers lays the foundation, break American-European countries in this field
Technical monopoly and embargo.
The content of the invention
It is an object of the invention to provide a kind of three axle capacitor MEMS acceleration sensors based on SOI silicon chips, use
One acceleration sensitive quality module unit, the detection to 3-axis acceleration, can be with signal deteching circuits each other without cross jamming
Realize single-chip integration.The present invention is specific as follows：
A kind of three axle capacitor MEMS acceleration sensors, including SOI silicon chips, acceleration sensitive quality module unit and glass
Glass substrate.The acceleration sensitive quality module unit is made up of horizontal axis detection unit and parallel-plate detection unit two parts.
Horizontal axis detection unit is provided with the front of SOI silicon chips.The horizontal axis detection unit passes for fixed tooth offset formula electric capacity
Sensor, detected by flat axial detection unit and feed back the capacitance signal of X axis and the capacitance signal of Y-axis.In SOI silicon chips
The back side is provided with groove.Parallel-plate detection unit is provided with a groove.Hole is communicated with the bottom of groove, is turned on by the intercommunicating pore
The front of SOI silicon chips and groove floor, the front of the intercommunicating pore and SOI silicon chips are mutually perpendicular to.The parallel-plate detection
Unit is fixedly connected through intercommunicating pore with horizontal axis detection unit.Be fixedly connected with glass base at the back side of SOI silicon chips, i.e., it is flat
Andante detection unit is encapsulated in the groove at the SOI silicon chips back side, and can be slided along the direction of intercommunicating pore on SOI silicon chips,
Detect and feed back Z axis to capacitance signal.
The preparation method of three axle capacitor MEMS acceleration sensors, is carried out as follows：
Step 1. is for piece：Prepare one piece of twin polishing SOI silicon chip, the SOI silicon chips by be sequentially connected upper silicon layer,
Silicon dioxide layer 302 and lower silicon layer 201 form.
Step 2. carries out first time photoetching：Carved in one layer of aluminium of backside deposition of lower floor's silicon 201 of SOI silicon chips as deep silicon
The mask plate of erosion, subsequent spin coating positive photoresist, photoetching is carried out to the photoresist layer of this step institute spin coating, etches the aluminium that this step is deposited
Layer, the lower floor's silicon 201 for exposing patterned area.Then, lower floor's silicon 201 is etched, shallow slot is formed at the back side of lower floor's silicon 201.It is described
Shallow slot region is lower silicon layer 201 region to be etched as groove side movable mass 202.
Step 3. carries out second of photoetching：The redeposited one layer of aluminium in the back side of second of lower floor's silicon 201 in SOI silicon chips is made
For the mask plate of second of deep silicon etching, then spin coating positive photoresist again, carries out photoetching to the photoresist layer of this step institute spin coating, carves
Aluminium lamination that step of losing capital is deposited, lower floor's silicon 201 to shallow slot surrounding perform etching, and form back side deep trouth, the back side deep trouth
Interior etching forms the structure of differential capacitance 203 under groove side movable mass 202 and two parallel-plates.Groove side in this step can
The inner side end of differential capacitance 203 is connected with silicon dioxide layer 302 under kinoplaszm gauge block 202 and parallel-plate.Remove this step
In the backside deposition of lower floor's silicon 201 the aluminium mask layer for playing mask.
Step 4. silicon-glass bonding：Using bonding techniques, by differential capacitance 203 under the bottom surface of lower floor's silicon 201, parallel-plate
End face outside is bonded together with sheet glass 400.Wherein, the inner surface of sheet glass 400 is provided with Nano getter.By receiving
Rice getter realizes the high vacuum encapsulation of millitorr magnitude between lower floor's silicon 201 and sheet glass 400.The Nano getter is dioxy
Change titanium TiO2 nano-tube arrays.
Step 5. carries out third time photoetching：One layer of aluminium is deposited as upper layer depth silicon on the surface of the upper layer of silicon of SOI silicon chips
Mask plate during etching, positive photoresist is then applied, the photoresist layer formed to this step carries out photoetching, etches the aluminium in this step
Layer and then the silica 302 of upper layer of silicon and oxygen buried layer is sequentially etched, is formed through the quick of upper layer of silicon and silicon dioxide layer 302
Feel the intercommunicating pore 114 of mass and the intercommunicating pore 111 of lower differential capacitance.Wherein, the intercommunicating pore 114 and groove side of sensitive-mass block
Movable mass 202 is corresponding, and the intercommunicating pore 111 of lower differential capacitance is corresponding with differential capacitance under parallel-plate 203.
Step 6. deposits highly doped polysilicon：By the intercommunicating pore 114 of sensitive-mass block and the intercommunicating pore of lower differential capacitance
111 are filled completely by highly doped polysilicon respectively, realize the interconnection of upper layer of silicon and lower floor's silicon 201, are gone by chemically mechanical polishing
Remove and planarize the polysilicon layer of upper strata silicon face.Then, then the aluminium mask of upper strata silicon face is removed so that towards upper layer of silicon one
The end of polysilicon layer at the intercommunicating pore 111 of the intercommunicating pore 114 of the sensitive-mass block of side and lower differential capacitance, which exposes outside, to be come, and
Projection is formed respectively, and the raised height is equal with the thickness of the aluminium mask removed in this step.Wherein, it is filled in sensitivity
The highly doped polysilicon of the intercommunicating pore 114 of mass is designated as sensitive-mass block connectedness 402, is filled in the company of lower differential capacitance
The highly doped polysilicon of through hole 111 is designated as lower differential capacitance connectedness 401.
Step 7. carries out four mask：In the surface deposition layer of metal aluminium of upper layer of silicon, then in the table of metallic aluminum
Face spin coating positive photoresist, photoetching is carried out to photoresist using the 4th mask plates, described metallic aluminum is performed etching, formed respectively
The metal pressure-welding block 102 of top sensitive mass, the metal pressure-welding block 104 of parallel-plate Top electrode, the metal pressure of X axis anchor block
The metal pressure-welding block 110 of welding block 106, the metal pressure-welding block 108 of Y-axis anchor block and lower differential capacitance.
Step 8. carries out the 5th photoetching：In the surface area layer conduct of the upper layer of silicon for the SOI silicon chips for completing step 7
The mask plate of upper strata silicon structural layer etching, then applies positive photoresist and etching oxidation layer, then to upper strata silicon etching, is formed respectively parallel
Differential capacitance 113, movable parallel plate capacitor Top electrode 112 on plate.X axis fixed broach 115, X axis movable comb 116, Y-axis
To fixed broach 117, Y-axis movable comb 118, L-type support spring beam 119, top sensitive mass 120, top sensitive matter
Gauge block X axis projection 121, top sensitive mass Y-axis connecting rod 122, top sensitive mass anchor block 101, on parallel-plate
The anchor block 103 of electrode, X axis anchor block 105, the anchor block 109 of Y-axis anchor block 107 and lower differential capacitance.It is same with this
When, etching forms structure release hole 301 in horizontal axis detection unit.
Step 9. structure release, obtain finished product：Vertical etch is carried out to upper silicon layer using corrosive liquid, will be not by top sensitive
Mass 120, top sensitive mass X axis projection 121 and top sensitive mass Y-axis connecting rod 122, top sensitive quality
Block anchor block 101, the anchor block 103 of parallel-plate Top electrode, X axis anchor block 105, Y-axis anchor block 107 and lower differential capacitance
The silicon dioxide layer 302 of the covering protection of anchor block 109 etch away, in the same time etching off remove make in step 8 play mask plate
The oxide layer of effect, structure release is realized, and form the making of the further groove of lower silicon layer 201, completed this three axle capacitive MEMS and add
The preparation of velocity sensor.
The method have the benefit that
Three axles capacitor MEMS acceleration sensor of the present invention is using the excellent characteristic of SOI silicon substrates, and it is to each axle
To acceleration sensitive used same acceleration sensitive quality module unit, X, the detection unit of Y-axis acceleration are using poor
Divide electric capacity fixed tooth offset formula, Z axis is realized to 3-axis acceleration without friendship to the detection unit parallel-plate differential capacitance type of acceleration
Interference Detection is pitched, and there is radioresistance advantage.
The preparation method of three axles capacitor MEMS acceleration sensor of the present invention, its preparation technology are simple and consistent
Property and reproducible.
It can realize that single-chip integration manufactures with its signal deteching circuit using the sensor of this structure, substantially reduce chip face
Product, there are higher detection sensitivity, reliability and stability.
Brief description of the drawings
Fig. 1 is the top view of three axles capacitor MEMS acceleration sensor of the present invention.
Fig. 2 is the upward view that structure shown in Fig. 1 removes glass substrate.
Fig. 3 is the schematic perspective view of a-quadrant structural relation in Fig. 1.
Fig. 4 is the schematic perspective view of B area structural relation in Fig. 1.
Fig. 5 is the schematic perspective view of C the relationship models for regional structure in Fig. 1.
Fig. 6 is the schematic perspective view of D the relationship models for regional structure in Fig. 1.
Fig. 7 is the schematic perspective view of E the relationship models for regional structure in Fig. 1.
Fig. 8 is the side view of SOI silicon chips used in step 1.
Fig. 9 is SOI silicon chips shown in Fig. 8 transverse sectional view after step 2 is completed.
Figure 10 is that the structure shown in Fig. 9 completes the sectional view after step 3.
Figure 11 is that the structure shown in Figure 10 completes the sectional view after step 4.
Figure 12 is that the structure shown in Figure 11 completes the sectional view after step 5.
Figure 13 is that the structure shown in Figure 11 completes the sectional view after step 6.
Figure 14 is that the structure shown in Figure 11 completes the sectional view after step 7.
Figure 15 is the principle assumption diagram that the structure shown in Figure 11 is prepared as the inventive method.
Serial number in figure：The metal pressure-welding block 102, flat of top sensitive mass anchor block 101, top sensitive mass
The anchor block 103 of andante Top electrode, the metal pressure-welding block 104 of parallel-plate Top electrode, X axis anchor block 105, X axis anchor block
Metal pressure-welding block 106, Y-axis anchor block 107, the metal pressure-welding block 108 of Y-axis anchor block, the anchor block of lower differential capacitance
109th, the metal pressure-welding block 110 of lower differential capacitance, the intercommunicating pore 111 of lower differential capacitance, movable parallel plate capacitor Top electrode 112,
Differential capacitance 113, the intercommunicating pore 114 of sensitive-mass block, X axis fixed broach 115, X axis movable comb 116, Y on parallel-plate
Axial restraint broach 117, Y-axis movable comb 118, L-type support spring beam 119, top sensitive mass 120, top sensitive
Mass X axis projection 121, top sensitive mass Y-axis connecting rod 122, lower silicon layer 201, groove side sensitive-mass block 202,
Differential capacitance 203, structure release hole 301, silicon dioxide layer 302, sheet glass 400, lower differential capacitance connectedness under parallel-plate
401st, sensitive-mass block connectedness 402, sensitive-mass block rectangular through-hole 403.
Specific embodiment
Describe the ins and outs and design feature of the present invention in detail in conjunction with accompanying drawing.
A kind of three axle capacitor MEMS acceleration sensors, including SOI silicon chips, acceleration sensitive quality module unit and glass
Glass substrate.The acceleration sensitive quality module unit is made up of horizontal axis detection unit and parallel-plate detection unit two parts.
Referring to Fig. 1, horizontal axis detection unit is provided with the front of SOI silicon chips.The horizontal axis detection unit is fixed tooth offset
Formula capacitance sensor, detected by horizontal axis detection unit and feed back X axis capacitance signal and Y-axis electric capacity letter
Number.Referring to Fig. 2, groove is provided with the back side of SOI silicon chips.Parallel-plate detection unit is provided with a groove, referring to Fig. 2.Recessed
The bottom of groove is provided with the intercommunicating pore communicated with SOI silicon chips front, and the front of the intercommunicating pore and SOI silicon chips is mutually perpendicular to.
The parallel-plate detection unit is fixedly connected through intercommunicating pore with horizontal axis detection unit.The back side of SOI silicon chips and glass base
Piece is fixedly connected.Parallel-plate detection unit is enclosed in the groove at the SOI silicon chips back side, referring to Figure 15, and can be along SOI silicon chips
The direction of upper intercommunicating pore is slided, detect and feed back Z axis to capacitance signal.
Furtherly, referring to Fig. 2 and Figure 15, the SOI silicon chips include the silicon dioxide layer 302 being connected with each other and lower silicon
Layer 201.Wherein, foregoing groove is arranged on the bottom surface of lower silicon layer 201, and groove is in I-shaped.
Referring to Fig. 2, groove side sensitive-mass block 202 is provided with the middle part of groove, is respectively set at the wide head at the both ends of groove
There is differential capacitance 203 under a parallel-plate.Differential capacitance 203 is rectangular block under parallel-plate, and with the shape phase of the wide head of groove
Match somebody with somebody.
Referring to Fig. 1, Fig. 2 and Figure 15, the parallel-plate detection unit includes：It is the anchor block 103 of parallel-plate Top electrode, parallel
Differential capacitance 113, the anchor block 109 of lower differential capacitance, lower differential capacitance on the metal pressure-welding block 104 of plate Top electrode, parallel-plate
Metal pressure-welding block 110, groove side sensitive-mass block 202, differential capacitance 203 under parallel-plate.Wherein,
Referring to Fig. 5, the anchor block 103 provided with a pair of parallel plate Top electrode on the top surface of silicon dioxide layer 302.Described two
The anchor block 103 of individual parallel-plate Top electrode is located at the both sides of I-shaped groove respectively, and the anchor block 103 of parallel-plate Top electrode leans on
The side of nearly adjacent silicon dioxide layer 302.It is rectangular block that differential capacitance 113, which is in, on the parallel-plate.Parallel-plate Top electrode
The broadside of anchor block 103 is connected with differential capacitance 113 on adjacent parallel-plate respectively.In the anchor block of parallel-plate Top electrode
103 upper surface is provided with the metal pressure-welding block 104 of parallel-plate Top electrode.I.e. parallel-plate differential electrical volume 113 is fixedly connected on
The surface of silicon layer.
Referring to Fig. 7, the intercommunicating pore 111 of the intercommunicating pore including lower differential capacitance, the intercommunicating pore 114 of sensitive-mass block and quick
Feel mass rectangular through-hole 403.Wherein, the intercommunicating pore of a lower differential capacitance is had in the end of the wide head in groove both ends
111.A lower differential capacitance connectedness 401 is respectively provided with the intercommunicating pore 111 of the lower differential capacitance.In silicon dioxide layer
302 top surface is provided with the anchor block 109 of four lower differential capacitances.It is respectively equipped with the top surface of the anchor block 109 of lower differential capacitance
The metal pressure-welding block 110 of lower differential capacitance.An adjutage is respectively equipped with the side wall of anchor block 109 of lower differential capacitance.Institute
State the top that adjutage extends respectively to the intercommunicating pore 111 of adjacent lower differential capacitance.By lower differential capacitance connectedness 401 by under
The adjutage of the anchor block 109 of differential capacitance and the differential electrical under the parallel-plate of the opposite side of intercommunicating pore 111 of lower differential capacitance
Hold 203 to be fixedly connected.The intercommunicating pore 114 of two sensitive-mass blocks is provided with groove shaft.The intercommunicating pore of the sensitive-mass block
114 are located at the both sides of differential capacitance 113 on parallel-plate, and groove wide head of the differential capacitance 113 close to homonymy on parallel-plate.It is described
A sensitive-mass block connectedness 402 is respectively provided with the intercommunicating pore 114 of sensitive-mass block.Positioned at two sensitive-mass blocks
Bottom portion of groove between intercommunicating pore 114 is additionally provided with a sensitive-mass block rectangular through-hole 403.
Referring to Fig. 1, two horizontal axis detection units are provided with the top surface of silicon dioxide layer 302.The horizontal axis
Detection unit is respectively positioned at the both sides of differential capacitance 113 on parallel-plate, and symmetrically.Wherein,
Each horizontal axis detection unit contains：Top sensitive mass anchor block 101, the gold of top sensitive mass
Belong to press welding block 102, X axis anchor block 105, the metal pressure-welding block 106 of X axis anchor block, Y-axis anchor block 107, Y-axis anchor
Gu the metal pressure-welding block 108 of block, movable parallel plate capacitor Top electrode 112, X axis fixed broach 115, X axis movable comb
116th, Y-axis fixed broach 117, Y-axis movable comb 118, L-type support spring beam 119, top sensitive mass 120, top
Sensitive-mass block X axis projection 121 and top sensitive mass Y-axis connecting rod 122, as shown in Figure 1 and Figure 7.
Wherein, referring to Fig. 7, movable parallel plate capacitor Top electrode 112 is rectangular block.Movable parallel plate capacitor Top electrode 112
One end respectively with a top sensitive mass X axis projection 121 of side wall of width be connected.The top sensitive
Mass X axis projection 121 is T-shaped.One group of Y is provided with the end face of the other end of top sensitive mass X axis projection 121
It is axially moveable broach 118.Y-axis is fixedly connected with the top surface close to the silicon dioxide layer 302 of Y-axis movable comb 118
Anchor block 107.One group of Y-axis is provided with the side wall of Y-axis anchor block 107 towards the side of Y-axis movable comb 118 and fixes comb
Tooth 117.The Y-axis fixed broach 117 intersects with Y-axis movable comb 118.Set at the top of Y-axis anchor block 107
There is the metal pressure-welding block 108 of Y-axis anchor block.
Referring to Fig. 3 and Fig. 5, the top sensitive mass 120 is rectangular block.At one of top sensitive mass 120
The side wall of length direction is provided with two top sensitive mass X axis projections 121, and the top sensitive mass X axis is convex
Block 121 is connected with adjacent top sensitive mass X axis projection 121 respectively.At another of top sensitive mass 120
The side wall of length direction is provided with X axis movable comb 116.In the silicon dioxide layer 302 close to X axis movable comb 116
X axis anchor block 105 is fixedly connected with top surface.In the side wall of X axis anchor block 105 towards the side of X axis movable comb 116
It is provided with X axis fixed broach 115.The X axis fixed broach 115 and X axis movable comb 116 are mutually ratcheting.In X axis
The top of anchor block 105 is provided with the metal pressure-welding block 106 of X axis anchor block.
Referring to Fig. 1 and Fig. 3, preferable scheme is, can provided with two groups of X axis in the side wall of top sensitive mass 120
Dynamic broach 116.Two groups of X axis movable combs 116 are located at the both ends of top sensitive mass 120 respectively, in silicon dioxide layer 302
Top surface be provided with two X axis anchor blocks 105, each X axis anchor block 105 with one group of phase of X axis movable comb 116
It is adjacent.One group of X axis fixed broach is equipped with the side wall of X axis anchor block 105 towards the side of X axis movable comb 116
115.The X axis fixed broach 115 and X axis movable comb 116 are mutually ratcheting.In addition, in each X axis anchor block 105
Top be equipped with the metal pressure-welding block 106 of X axis anchor block.
Referring to Fig. 1, Fig. 6 and Fig. 7, one is respectively provided with the side wall of two widths of top sensitive mass 120
Top sensitive mass anchor block 101, the bottom of the top sensitive mass anchor block 101 are connected with silicon dioxide layer 302
Connect, the top of top sensitive mass anchor block 101 is provided with the metal pressure-welding block 102 of top sensitive mass.
Referring to Fig. 1 and Fig. 7, the bottom surface of movable parallel plate capacitor Top electrode 112 and adjacent sensitive-mass block connectedness 402
End be connected, the other end of sensitive-mass block connectedness 402 is connected with groove side sensitive-mass block 202.That is two trunnion axis
It is connected to detection unit with groove side sensitive-mass block 202.
Referring to Figure 11, glass substrate is one block of sheet glass 400.The bottom shape phase of the sheet glass 400 and lower silicon layer 201
Together, and the end face outside with differential capacitance under parallel-plate 203, the bottom surface of lower silicon layer 201 are fixedly connected.By groove side sensitive-mass
The Z-direction displacement of block 202 is limited in bottom portion of groove between sheet glass 400.
Furtherly, referring to Fig. 1, Fig. 7 and Figure 15, structure release hole 301 is provided with horizontal axis detection unit.
Furtherly, referring to Fig. 1, the structure release hole 301 be through rectangle or circular aperture.Structure release hole
301 are distributed in movable parallel plate capacitor Top electrode 112, top sensitive mass 120, top sensitive mass X axis projection 121
With the surface of top sensitive mass Y-axis connecting rod 122, axial detection unit of improving the standard mechanical strength and toughness it is same
When, the deadweight of horizontal axis detection unit is on the one hand reduced, on the other hand improves the sensitiveness to capacitance change.
A kind of preparation method of three axles capacitor MEMS acceleration sensor, is specifically carried out as follows：
Step 1. is for piece：Prepare one piece of twin polishing SOI silicon chip, the SOI silicon chips by be sequentially connected upper silicon layer,
Silicon dioxide layer 302 and lower silicon layer 201 form, as shown in Figure 8.
Step 2. carries out first time photoetching：It is used as the first time in one layer of aluminium of backside deposition of lower floor's silicon 201 of SOI silicon chips
The mask plate of deep silicon etching, subsequent spin coating positive photoresist, light is carried out to the photoresist layer of this step institute spin coating using the first mask plates
Carve, etch the aluminium lamination that this step is deposited, expose lower floor's silicon 201 of patterned area.Then, lower floor's silicon 201 is etched, in lower floor's silicon
201 back side forms shallow slot.The shallow slot region is lower silicon layer 201 region to be etched as groove side movable mass 202,
Refer to Fig. 9.
Step 3. carries out second of photoetching：The redeposited aluminium lamination in the back side of second of lower floor's silicon 201 in SOI silicon chips
Mask plate, subsequent spin coating positive photoresist again as second of deep silicon etching, using the second mask plates to the spin coating of this step institute
Photoresist layer carries out photoetching, etches the aluminium lamination that this step is deposited, then carries out deep silicon quarter to lower floor's silicon 201 of shallow slot surrounding
Erosion, back side deep trouth is formed, etching forms differential electrical under groove side movable mass 202 and two parallel-plates in the back side deep trouth
Hold 203 structures.The inner side end of differential capacitance 203 is with two under groove side movable mass 202 and parallel-plate in this step
Silicon oxide layer 302 is connected, and removes in this step in the backside deposition of lower floor's silicon 201, aluminium lamination as mask plate.Refer to figure
10。
Step 4. silicon-glass bonding：Using bonding techniques, by differential capacitance 203 under the bottom surface of lower floor's silicon 201, parallel-plate
End face outside is bonded together with sheet glass 400.Wherein, the inner surface of sheet glass 400 is provided with Nano getter, so as to real
Now the high vacuum of millitorr magnitude encapsulates between layer silicon 201 and sheet glass 400, refers to Figure 11.Preferable scheme is nanometer air-breathing
Agent is titanium dioxide TiO2Nano-tube array.
Step 5. carries out third time photoetching：One layer of aluminium is deposited on the surface of the upper layer of silicon of SOI silicon chips to carve as upper layer of silicon
Mask plate during erosion, then applies positive photoresist, and the photoresist layer formed using three mask plates to this step carries out photoetching, etching
Aluminium lamination in this step, is then sequentially etched upper layer of silicon and the silicon dioxide layer 302 of oxygen buried layer, and formation runs through upper layer of silicon and titanium dioxide
The intercommunicating pore 111 of the intercommunicating pore 114 of the sensitive-mass block of silicon layer 302 and lower differential capacitance.Wherein, the intercommunicating pore of sensitive-mass block
114 is corresponding with groove side movable mass 202, and the intercommunicating pore 111 of lower differential capacitance is relative with differential capacitance under parallel-plate 203
Should, refer to Figure 12.
Step 6. deposits highly doped polysilicon：By the intercommunicating pore 114 of sensitive-mass block and the intercommunicating pore of lower differential capacitance
111 are filled completely by highly doped polysilicon respectively, realize the interconnection of upper layer of silicon and lower floor's silicon 201, are gone by chemically mechanical polishing
Remove and planarize the polysilicon layer of upper strata silicon face.The aluminium mask of upper strata silicon face is removed again.Wherein, it is filled in sensitive-mass block
The highly doped polysilicon of intercommunicating pore 114 be designated as sensitive-mass block connectedness 402, be filled in the intercommunicating pore of lower differential capacitance
111 highly doped polysilicon is designated as lower differential capacitance connectedness 401, refers to Figure 13.Furtherly, the polysilicon layer of through hole
There is a projection, raised height is equal with the thickness of aluminium mask.
Step 7. carries out four mask：In the surface deposition layer of metal aluminium of upper layer of silicon, then in the table of metallic aluminum
Face spin coating positive photoresist, photoetching is carried out to photoresist using the 4th mask plates, described metallic aluminum is performed etching, formed respectively
The metal pressure-welding block 102 of top sensitive mass, the metal pressure-welding block 104 of parallel-plate Top electrode, the metal pressure of X axis anchor block
The metal pressure-welding block 110 of welding block 106, the metal pressure-welding block 108 of Y-axis anchor block and lower differential capacitance.
Step 8. carries out the 5th photoetching：Make in the surface deposited oxide layer of the upper layer of silicon for the SOI silicon chips for completing step 7
For the mask plate of upper strata silicon structural layer, positive photoresist and etching oxidation layer are then applied, then to upper strata silicon etching, forms parallel-plate respectively
Upper differential capacitance 113, movable parallel plate capacitor Top electrode 112.X axis fixed broach 115, X axis movable comb 116, Y-axis
Fixed broach 117, Y-axis movable comb 118, L-type support spring beam 119, top sensitive mass 120, top sensitive quality
Block X axis projection 121 and top sensitive mass Y-axis connecting rod 122, top sensitive mass anchor block 101, electricity on parallel-plate
The anchor block 103 of pole, X axis anchor block 105, the anchor block 109 of Y-axis anchor block 107 and lower differential capacitance.At the same time,
Etching forms structure release hole 301 in horizontal axis detection unit, refers to Figure 14.
Step 9. structure release, obtain finished product：Vertical etch is carried out to upper silicon layer using corrosive liquid, will be not by top sensitive
Mass 120, top sensitive mass X axis projection 121 and top sensitive mass Y-axis connecting rod 122, top sensitive quality
Block anchor block 101, the anchor block 103 of parallel-plate Top electrode, X axis anchor block 105, Y-axis anchor block 107 and lower differential capacitance
The silicon dioxide layer 302 of the covering protection of anchor block 109 etch away, in the same time etching off remove it is being obtained by step 8, play mask plate work
Oxide layer, structure release is realized, and form the making of the further groove of lower silicon layer 201, complete three axles electric capacity of the present invention
The preparation of formula MEMS acceleration transducers, refers to Figure 15 and Fig. 1.
Furtherly, the corrosive liquid described in step 10 is hydrofluoric acid HF acid, is carried out by the corrosive liquid that composition is HF acid
Gaseous corrosion, the release for realizing structure.In other words, it is by below upper layer of silicon sensor construction layer local, material by corrosive liquid
The oxygen buried layer of silica is got rid of, so by differential capacitance 113 on the parallel-plate provided with structure release hole 301, provided with structure
The movable parallel plate capacitor Top electrode 112 of release aperture 301.X axis fixed broach 115, X axis movable comb 116, Y-axis are solid
Determine broach 117, Y-axis movable comb 118, the silicon dioxide layer 302 of the lower section of L-type support spring beam 119 to etch away, refer to Fig. 5,
Fig. 7 and Figure 15.It should be pointed out that Figure 15 is the principle assumption diagram that the structure shown in Figure 11 is prepared as the inventive method, not
It is the one-to-one structure chart for Fig. 9 to Figure 14.
The axle capacitor MEMS acceleration sensor of structure three of the present invention, using an acceleration sensitive quality module unit
To detect the acceleration of tri- axial directions of X, Y and Z respectively, the detection of each axial acceleration is separate, and nothing interferes with each other.
Specifically, acceleration sensitive quality module unit is the horizontal axis detection unit peace being integrated by interconnection
Andante detection unit two parts are formed.Wherein, the core texture of horizontal axis detection unit is groove side sensitive-mass block 202.
The core texture of parallel-plate detection unit is L-type support spring beam 119, top sensitive mass 120, top sensitive mass X
Axial projection 121 and top sensitive mass Y-axis connecting rod 122.The four pairs of X-axis formed by the upper strata silicon etching of SOI silicon chips
To broach differential capacitance sensitive electrode --- four groups of X axis fixed broach 115 and X axis movable comb 116, detected for forming
The detection electric capacity of X axis acceleration magnitude.And the four pairs of Y-axis broach differential capacitances formed by the upper strata silicon etching of SOI silicon chips
Sensitive electrode --- four groups of Y-axis fixed broach 117 and Y-axis movable comb 118, Y-axis acceleration magnitude is detected for forming
Detection electric capacity.Differential capacitance 113 in movable parallel plate capacitor Top electrode 112 and parallel-plate, forms detection Z axis to acceleration magnitude
Difference parallel-plate detection electric capacity.
The X axis broach differential capacitance sensitive electrode and Y-axis broach differential capacitance sensitive electrode of the present invention is using fixed
Tooth offset formula, when there is acceleration, X, Y-direction mass are moved the left and right or above-below direction along SOI silicon chip top surfaces, between broach
Spacing changes, and electric capacity changes, to realize the detection to X, Y-axis acceleration.Its architectural feature is that fixed tooth is single
Side comb-tooth-type structure rather than fixed tooth put structure.Using horizontal, the longitudinally asymmetric axle of sensitive-mass as boundary, left and right, up-down structure pair
Claim.Fixed tooth opposing upper and lower is to be electrically connected, and the electric polarity of left side fixed tooth is opposite with the electric polarity of right side fixed tooth.Sensing element
Each moving teeth and two neighboring fixed tooth between broach it is interconnected, structure be integrally left and right, it is symmetrical above and below, formed differential electrical
Hold.When the acceleration of Z-direction be present, total capacitance change is consistent, middle no signal output.Design feature effectively solves
Y, Z axis interference and X to acceleration to X axis acceleration detection, Z axis are done to acceleration to Y-axis acceleration detection
Disturb.Detection of the Z axis to acceleration of the present invention realized by parallel-plate differential capacitance type, parallel when Z axis is to when having acceleration
Plate differential capacitance can be produced and moved up and down, and the face spacing of parallel-plate differential capacitance changes, and a parallel-plate differential electrical
The electric capacity increase of appearance, the electric capacity of another pair parallel-plate differential capacitance reduce, form differential capacitance, there is electrical signal output.Work as X
When having acceleration on axle, Y-axis, Z axis to two detection electric capacity although change, but its change is consistent completely, therefore will not
There is a signal output, the acceleration in X-axis, Y-axis is noiseless to detection of the Z axis to acceleration.
Claims (2)
- A kind of 1. three axle capacitor MEMS acceleration sensors, it is characterised in that：Including SOI silicon chips, acceleration sensitive quality Module unit and glass substrate；The acceleration sensitive quality module unit is made up of horizontal axis detection unit and parallel-plate detection unit two parts；Horizontal axis detection unit is provided with the front of SOI silicon chips；The horizontal axis detection unit is fixed tooth offset formula electricity Hold sensor, detected by horizontal axis detection unit and feed back the capacitance signal of X axis and the capacitance signal of Y-axis；Groove is provided with the back side of SOI silicon chips；Parallel-plate detection unit is provided with a groove；It is communicated with the bottom of groove Hole, front and the groove floor of SOI silicon chips are turned on by the intercommunicating pore；The parallel-plate detection unit is through intercommunicating pore and trunnion axis It is fixedly connected to detection unit；Glass substrate is fixedly connected with the back side of SOI silicon chips；I.e. parallel-plate detection unit is encapsulated in the SOI silicon chips back side In groove, and can along on SOI silicon chips intercommunicating pore direction slide, detect and feed back Z axis to capacitance signal；Concrete structure is as follows：The SOI silicon chips include the silicon dioxide layer being connected with each other（302）And lower silicon layer（201）；Wherein, foregoing groove is set Put in lower silicon layer（201）Bottom surface, and the groove is in I-shaped；Groove side sensitive-mass block is provided with the middle part of groove（202）, be respectively provided with the wide head at the both ends of groove one it is parallel Differential capacitance under plate（203）；Differential capacitance under parallel-plate（203）For rectangular block, and match with the shape of the wide head of groove；The parallel-plate detection unit includes：The anchor block of parallel-plate Top electrode（103）, parallel-plate Top electrode metal pressure-welding block （104）, differential capacitance on parallel-plate（113）, lower differential capacitance anchor block（109）, lower differential capacitance metal pressure-welding block （110）, groove side sensitive-mass block（202）, differential capacitance under parallel-plate（203）；Wherein,In silicon dioxide layer（302）Top surface be provided with a pair of parallel plate Top electrode anchor block（103）；Described two parallel-plates The anchor block of Top electrode（103）It is located at the both sides of I-shaped groove, and the anchor block of parallel-plate Top electrode respectively（103）Close to phase Adjacent silicon dioxide layer（302）Side；Differential capacitance on the parallel-plate（113）In for rectangular block；Parallel-plate Top electrode Anchor block（103）Broadside respectively with differential capacitance on adjacent parallel-plate（113）It is connected；In the anchoring of parallel-plate Top electrode Block（103）Upper surface be provided with parallel-plate Top electrode metal pressure-welding block（104）；That is parallel-plate differential electrical volume（113）It is fixed It is connected to the surface of upper silicon layer；Also include the intercommunicating pore of lower differential capacitance（111）, sensitive-mass block intercommunicating pore（114）With sensitive-mass block rectangular through-hole （403）；Wherein, the intercommunicating pore of a lower differential capacitance is had in the end of the wide head in groove both ends（111）；The lower difference The intercommunicating pore of electric capacity（111）Inside it is respectively provided with a lower differential capacitance connectedness（401）；In silicon dioxide layer（302）Top surface Anchor block provided with four lower differential capacitances（109）；In the anchor block of lower differential capacitance（109）Top surface be respectively equipped with lower difference The metal pressure-welding block of electric capacity（110）；In the anchor block of lower differential capacitance（109）An adjutage is respectively equipped with side wall；It is described Adjutage extends respectively to the intercommunicating pore of adjacent lower differential capacitance（111）Top；Pass through lower differential capacitance connectedness（401）Will The anchor block of lower differential capacitance（109）Adjutage with positioned at lower differential capacitance intercommunicating pore（111）Under the parallel-plate of opposite side Differential capacitance（203）It is fixedly connected；The intercommunicating pore of two sensitive-mass blocks is provided with groove shaft（114）；The sensitive-mass The intercommunicating pore of block（114）The differential capacitance on parallel-plate（113）Both sides, and differential capacitance on parallel-plate（113）Close to same The wide head of groove of side；The intercommunicating pore of the sensitive-mass block（114）Inside it is respectively provided with a sensitive-mass block connectedness（402）； In the intercommunicating pore positioned at two sensitive-mass blocks（114）Between bottom portion of groove be additionally provided with a sensitive-mass block rectangular through-hole （403）；In silicon dioxide layer（302）Top surface be provided with two horizontal axis detection units；The horizontal axis detection unit point Wei Yu not differential capacitance on parallel-plate（113）Both sides, and symmetrically；Wherein,Each horizontal axis detection unit contains：Top sensitive mass anchor block（101）, top sensitive mass metal Press welding block（102）, X axis anchor block（105）, X axis anchor block metal pressure-welding block（106）, Y-axis anchor block（107）、Y The metal pressure-welding block of axial anchor block（108）, movable parallel plate capacitor Top electrode（112）, X axis fixed broach（115）, X-axis To movable comb（116）, Y-axis fixed broach（117）, Y-axis movable comb（118）, L-type support spring beam（119）, top Sensitive-mass block（120）, top sensitive mass X axis projection（121）With top sensitive mass Y-axis connecting rod（122）；Wherein, movable parallel plate capacitor Top electrode（112）For rectangular block；Movable parallel plate capacitor Top electrode（112）Width side To side wall respectively with a top sensitive mass X axis projection（121）One end be connected；The top sensitive mass X axis projection（121）It is T-shaped；In top sensitive mass X axis projection（121）The end face of the other end be provided with one group of Y-axis To movable comb（118）；Close to Y-axis movable comb（118）Silicon dioxide layer（302）Top surface on be fixedly connected with Y Axial anchor block（107）；Towards Y-axis movable comb（118）The Y-axis anchor block of side（107）Side wall is provided with one group of Y Axial restraint broach（117）；The Y-axis fixed broach（117）With Y-axis movable comb（118）Intersect；In Y-axis Anchor block（107）Top be provided with Y-axis anchor block metal pressure-welding block（108）；The top sensitive mass（120）For rectangular block；In top sensitive mass（120）A length direction side wall It is provided with two top sensitive mass X axis projections（121）, the top sensitive mass X axis projection（121）Respectively with Adjacent top sensitive mass X axis projection（121）It is connected；In top sensitive mass（120）Another length side To side wall be provided with X axis movable comb（116）；Close to X axis movable comb（116）Silicon dioxide layer（302）'s X axis anchor block is fixedly connected with top surface（105）；Towards X axis movable comb（116）The X axis anchor block of side （105）Side wall is provided with X axis fixed broach（115）；The X axis fixed broach（115）With X axis movable comb（116） It is mutually ratcheting；In X axis anchor block（105）Top be provided with X axis anchor block metal pressure-welding block（106）；In top sensitive mass（120）Two widths side wall on be respectively provided with a top sensitive mass anchor block （101）, the top sensitive mass anchor block（101）Bottom and silicon dioxide layer（302）It is connected, top sensitive quality Block anchor block（101）Top be provided with top sensitive mass metal pressure-welding block（102）；Movable parallel plate capacitor Top electrode（112）Bottom surface and adjacent sensitive-mass block connectedness（402）End be connected, it is quick Feel mass connectedness（402）The other end and groove side sensitive-mass block（202）It is connected；That is two horizontal axis detection units With groove side sensitive-mass block（202）It is connected；Glass substrate is one block of sheet glass（400）；The sheet glass（400）With lower silicon layer（201）Bottom shape it is identical, and with Differential capacitance under parallel-plate（203）End face outside, lower silicon layer（201）Bottom surface be fixedly connected；By groove side sensitive-mass block （202）Z-direction displacement be limited in bottom portion of groove to sheet glass（400）Between；Structure release hole is provided with horizontal axis detection unit（301）；The structure release hole（301）For through rectangle or circular aperture；Structure release hole（301）It is distributed in movable parallel-plate Electric capacity Top electrode（112）, top sensitive mass（120）, top sensitive mass X axis projection（121）With top sensitive matter Gauge block Y-axis connecting rod（122）Surface, while the mechanical strength and toughness for axial detection unit of improving the standard, on the one hand The deadweight of horizontal axis detection unit is reduced, on the other hand improves the sensitiveness to capacitance change.
- 2. the preparation method of three axles capacitor MEMS acceleration sensor as claimed in claim 1, it is characterised in that：By following step It is rapid to carry out：Step 1. is for piece：Prepare one piece of twin polishing SOI silicon chip, the SOI silicon chips are by the upper silicon layer, the dioxy that are sequentially connected SiClx layer（302）And lower silicon layer（201）Composition；Step 2. carries out first time photoetching：In lower floor's silicon of SOI silicon chips（201）One layer of aluminium of backside deposition as once deep silicon The mask of etching, subsequent spin coating positive photoresist, photoetching is carried out to the photoresist layer of this step institute spin coating, etches the aluminium that this step is deposited Layer, expose lower floor's silicon of patterned area（201）；Then, lower floor's silicon is etched（201）, in lower floor's silicon（201）The back side formed it is shallow Groove；The shallow slot region turns into groove side movable mass to be to be etched（202）Lower silicon layer（201）Region；Step 3. carries out second of photoetching：Second of lower floor's silicon in SOI silicon chips（201）The redeposited one layer of aluminium conduct in the back side The mask of second of deep silicon etching, then spin coating positive photoresist again carry out photoetching to the photoresist layer of this step institute spin coating, etching this The aluminium lamination that step is deposited, to lower floor's silicon of shallow slot surrounding（201）Deep silicon etching is carried out, forms back side deep trouth, the back side is deep Etching forms groove side movable mass in groove（202）With differential capacitance under two parallel-plates（203）Structure；It is recessed in this step Groove side movable mass（202）With differential capacitance under parallel-plate（203）Inner side end and silicon dioxide layer（302）It is connected Connect；Remove in this step in lower floor's silicon（201）The aluminium lamination for playing mask of backside deposition；Step 4. silicon-glass bonding：Using bonding techniques, by lower floor's silicon（201）Bottom surface, differential capacitance under parallel-plate（203）'s End face outside and sheet glass（400）It is bonded together；Wherein, sheet glass（400）Inner surface be provided with Nano getter, from And realize lower floor's silicon（201）With sheet glass（400）Between millitorr magnitude high vacuum encapsulation；Step 5. carries out third time photoetching：When depositing one layer of aluminium as upper strata silicon etching on the surface of the upper layer of silicon of SOI silicon chips Mask, then apply positive photoresist, the photoresist layer that is formed to this step carries out photoetching, etches in this step aluminium lamination and then successively Etch the silica of upper layer of silicon and oxygen buried layer（302）, formed and run through upper layer of silicon and silicon dioxide layer（302）Sensitive-mass block Intercommunicating pore（114）With the intercommunicating pore of lower differential capacitance（111）；Wherein, the intercommunicating pore of sensitive-mass block（114）Can with groove side Kinoplaszm gauge block（202）It is corresponding, the intercommunicating pore of lower differential capacitance（111）With differential capacitance under parallel-plate（203）It is corresponding；Step 6. deposits highly doped polysilicon：By the intercommunicating pore of sensitive-mass block（114）With the intercommunicating pore of lower differential capacitance （111）Filled completely by highly doped polysilicon respectively, realize upper layer of silicon and lower floor's silicon（201）Interconnection, thrown by chemical machinery Light removes and planarizes the polysilicon layer of upper strata silicon face；The aluminium mask of upper strata silicon face is removed again；Wherein, it is filled in sensitive matter The intercommunicating pore of gauge block（114）Highly doped polysilicon be designated as sensitive-mass block connectedness（402）, it is filled in lower differential capacitance Intercommunicating pore（111）Highly doped polysilicon be designated as lower differential capacitance connectedness（401）；Step 7. carries out four mask：In the surface deposition layer of metal aluminium of upper layer of silicon, then revolved on the surface of metallic aluminum Positive photoresist is applied, photoetching is carried out to photoresist, described metallic aluminum is performed etching, forms the metal of top sensitive mass respectively Press welding block（102）, parallel-plate Top electrode metal pressure-welding block（104）, X axis anchor block metal pressure-welding block（106）, Y-axis The metal pressure-welding block of anchor block（108）With the metal pressure-welding block of lower differential capacitance（110）；Step 8. carries out the 5th photoetching：Complete step 7 SOI silicon chips upper layer of silicon surface deposited oxide layer as upper The mask plate of layer silicon structural layer etching, then applies positive photoresist and etching oxidation layer, then to upper strata silicon etching, forms parallel-plate respectively Upper differential capacitance（113）, movable parallel plate capacitor Top electrode（112）；X axis fixed broach（115）, X axis movable comb （116）, Y-axis fixed broach（117）, Y-axis movable comb（118）, L-type support spring beam（119）, top sensitive mass （120）, top sensitive mass X axis projection（121）With top sensitive mass Y-axis connecting rod（122）, top sensitive quality Block anchor block（101）, parallel-plate Top electrode anchor block（103）, X axis anchor block（105）, Y-axis anchor block（107）With under The anchor block of differential capacitance（109）；At the same time, etching forms structure release hole in horizontal axis detection unit（301）；Step 9. structure release, obtain finished product：Vertical etch is carried out to upper silicon layer using corrosive liquid, will be not by top sensitive quality Block（120）, top sensitive mass X axis projection（121）With top sensitive mass Y-axis connecting rod（122）, top sensitive matter Gauge block anchor block（101）, parallel-plate Top electrode anchor block（103）, X axis anchor block（105）, Y-axis anchor block（107）With The anchor block of lower differential capacitance（109）The silicon dioxide layer of covering protection（302）Etch away, etching off is removed and made by step 8 in the same time Make oxide layer obtaining, playing mask plate, realize structure release, and form lower silicon layer（201）The making of further groove, complete The preparation of this three axle capacitor MEMS acceleration sensor；The corrosive liquid is hydrofluoric acid, and then will be provided with structure release hole（301）Parallel-plate on differential capacitance（113）, be provided with Structure release hole（301）Movable parallel plate capacitor Top electrode（112）；X axis fixed broach（115）, X axis movable comb （116）, Y-axis fixed broach（117）, Y-axis movable comb（118）, L-type support spring beam（119）The silica of lower section Layer（302）Etch away.
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