CN107064555B - MEMS accelerometer and manufacturing process thereof - Google Patents
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- G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
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Abstract
Description
技术领域technical field
本发明涉及一种MEMS传感器,特别是一种MEMS加速度计。The invention relates to a MEMS sensor, in particular to a MEMS accelerometer.
背景技术Background technique
现今,加速度计可适用于诸多应用,例如在测量地震的强度并收集数据、检测汽车碰撞时的撞击强度、以及在手机及游戏机中检测出倾斜的角度和方向。而在微电子机械系统(MEMS)技术不断进步的情况下,许多纳米级的小型加速度测量仪已经被商业化广泛采用。Today, accelerometers are suitable for many applications, such as measuring the strength of earthquakes and collecting data, detecting the impact strength of a car crash, and detecting the angle and direction of tilt in mobile phones and game consoles. With the continuous advancement of microelectromechanical system (MEMS) technology, many nanometer-scale small accelerometers have been widely used commercially.
通常加速度计只能够测量X、Y、Z轴中一个平面方向上的加速度,如果需要测量三个维度的加速度的话则需要分别设置三个加速度计。为此,设计者也应需要设计出可以直接检测三个维度的加速度。例如公开号为CN102798734的中国发明专利申请,其使用了三个独立的质量块,并在每个质量块和支撑框体直接形成梳齿结构,每个质量块负责检测一个平面方向上的加速度。Usually, the accelerometer can only measure the acceleration in one plane direction in the X, Y, and Z axes. If you need to measure the acceleration in three dimensions, you need to set up three accelerometers respectively. To this end, the designer should also need to design the acceleration that can directly detect the three dimensions. For example, the Chinese invention patent application with publication number CN102798734 uses three independent mass blocks, and a comb-tooth structure is directly formed between each mass block and the supporting frame, and each mass block is responsible for detecting the acceleration in a plane direction.
虽然这种结构可以直接检测出三个方向上的加速度,但其需要设置三个独立的质量块,质量块和框架并不能重复利用,以至于整体的芯片面积非常的大。此外,在现实情况中,加速度经常是X、Y、Z轴三个向量的组合。在检测时,三个独立的质量块都会产生位移,质量块与质量块之间的串扰和噪音也会影响检测结果的精度。此外,通过检测质量块和框架之间梳齿的间距和/或重叠面积变化的方式的精度本身就比较低。而由于设置了三个不同的质量块,为了达到准确的检测结果,其对各个质量块以及弹性梁之间的一致性要求非常高,以至于其对整体的加工工艺上要求也会非常高。Although this structure can directly detect the acceleration in three directions, it requires three independent mass blocks, and the mass blocks and the frame cannot be reused, so that the overall chip area is very large. In addition, in reality, acceleration is often a combination of three vectors of X, Y, and Z axes. During detection, the three independent mass blocks will all generate displacement, and the crosstalk and noise between the mass blocks will also affect the accuracy of the detection results. In addition, the accuracy of detecting changes in the spacing and/or overlapping area of the comb teeth between the proof-mass and the frame is inherently low. Since three different mass blocks are set, in order to achieve accurate detection results, the requirements for the consistency between each mass block and the elastic beam are very high, so that the overall processing technology requirements are also very high.
发明内容SUMMARY OF THE INVENTION
本发明所要解决的技术问题在于克服上述现有技术之不足,提供一种具有较高的精度,并且检测误差小,性能稳定的MEMS加速度计。The technical problem to be solved by the present invention is to overcome the above-mentioned deficiencies of the prior art, and to provide a MEMS accelerometer with high precision, small detection error and stable performance.
一种MEMS加速度计,包括:上盖板、器件层以及下盖板;所述器件层包括:锚点、质量块、解耦梁以及加速度检测结构;所述锚点与所述上盖板以及下盖板相固定;所述解耦梁用于连接所述锚点以及所述质量块,所述加速度检测结构轴对称设置在所述质量块中,所述加速度检测结构包括:谐振梁以及驱动电极;所述谐振梁的两个末端分别与锚点相连接;所述谐振梁的两侧形成有梳齿;所述谐振梁一侧的梳齿与所述驱动电极相叠加;谐振梁另一侧的梳齿与所述质量块上的梳齿相叠加;所述驱动电极向所述谐振梁施加电驱动信号,使得所述谐振梁振动,所述加速度检测结构通过检测谐振梁的振动频率来检测加速度。A MEMS accelerometer includes: an upper cover plate, a device layer and a lower cover plate; the device layer includes: an anchor point, a mass block, a decoupling beam and an acceleration detection structure; the anchor point and the upper cover plate and The lower cover plate is fixed; the decoupling beam is used to connect the anchor point and the mass block, the acceleration detection structure is axially symmetrically arranged in the mass block, and the acceleration detection structure includes: a resonance beam and a drive two ends of the resonant beam are respectively connected with the anchor point; comb teeth are formed on both sides of the resonant beam; the comb teeth on one side of the resonant beam are superimposed with the driving electrodes; the other The comb teeth on the side are superimposed with the comb teeth on the mass block; the drive electrode applies an electric drive signal to the resonant beam to make the resonant beam vibrate, and the acceleration detection structure detects the vibration frequency of the resonant beam to detect the vibration frequency of the resonant beam. Detect acceleration.
本发明还包括以下附属特征:The present invention also includes the following accessory features:
所述驱动电极的电驱动信号包括:正弦波、方波、三角波;所述电驱动信号的频率在:10赫兹至10兆赫兹之间。The electric driving signal of the driving electrode includes: sine wave, square wave, triangular wave; the frequency of the electric driving signal is between 10 Hz and 10 MHz.
所述质量块中分别设置有三组加速度检测结构组,每组加速度检测结构组中包括至少两个加速度检测结构,所述加速度检测结构组分别通过差分方式检测所述质量块在三个维度上的位移。The mass blocks are respectively provided with three groups of acceleration detection structure groups, each group of acceleration detection structure groups includes at least two acceleration detection structures, and the acceleration detection structure groups respectively detect the three-dimensional acceleration of the mass block in a differential manner. displacement.
所述质量块上形成有凹陷区,位于所述凹陷区中的质量块侧壁上形成有梳齿,所述加速度结构设置在所述凹陷区域中。A concave area is formed on the mass block, comb teeth are formed on the side wall of the mass block located in the concave area, and the acceleration structure is arranged in the concave area.
所述谐振梁的梳齿高度与所述质量块侧壁上的梳齿高度相同。The height of the comb teeth of the resonance beam is the same as the height of the comb teeth on the side wall of the mass block.
所述谐振梁的梳齿高度不大于所述质量块侧壁上的梳齿高度,所述谐振梁的梳齿的一端与所述质量块侧壁上的梳齿相平齐。The height of the comb teeth of the resonance beam is not greater than the height of the comb teeth on the side wall of the mass block, and one end of the comb teeth of the resonance beam is flush with the comb teeth on the side wall of the mass block.
所述谐振梁的梳齿高度为所述质量块侧壁上的梳齿高度的一半,所述谐振梁的梳齿的一端与所述质量块侧壁上的梳齿相平齐。The height of the comb teeth of the resonance beam is half of the height of the comb teeth on the side wall of the mass block, and one end of the comb teeth of the resonance beam is flush with the comb teeth on the side wall of the mass block.
所述解耦梁包括解耦梁框架以及音叉型解耦梁;所述解耦梁框架与所述锚点相连接,所述质量块通过音叉型解耦梁与所述解耦梁框架相连接。The decoupling beam includes a decoupling beam frame and a tuning fork type decoupling beam; the decoupling beam frame is connected to the anchor point, and the mass block is connected to the decoupling beam frame through a tuning fork type decoupling beam .
一种MEMS加速度计的制造工艺,所述制造工艺包括以下步骤:A manufacturing process of a MEMS accelerometer, the manufacturing process comprising the following steps:
第一步,利用高温生长或者化学淀积法,在绝缘体上硅片的顶面和底面上形成二氧化硅层;The first step is to use high temperature growth or chemical deposition to form silicon dioxide layers on the top and bottom surfaces of the silicon-on-insulator wafer;
第二步,通过光刻以及刻蚀,在所述绝缘体上硅片的顶面的二氧化硅层上刻蚀出一个深至上硅层的槽;In the second step, through photolithography and etching, a groove deep to the upper silicon layer is etched on the silicon dioxide layer on the top surface of the silicon-on-insulator wafer;
第三步,通过化学淀积法,在所述绝缘体上硅片的顶面上进一步淀积一层氮化硅层;The third step is to further deposit a silicon nitride layer on the top surface of the silicon-on-insulator wafer by chemical deposition;
第四步,通过光刻以及刻蚀,对所述绝缘体上硅片的顶面上的氮化硅层和二氧化硅层进行刻蚀,形成多个深至上硅层的槽;The fourth step is to etch the silicon nitride layer and the silicon dioxide layer on the top surface of the silicon-on-insulator wafer by photolithography and etching to form a plurality of grooves as deep as the upper silicon layer;
第五步,通过光刻以及刻蚀,对所述绝缘体上硅片的底面上的二氧化硅层进行刻蚀,形成多个深至下硅层的槽;The fifth step, through photolithography and etching, the silicon dioxide layer on the bottom surface of the silicon-on-insulator wafer is etched to form a plurality of grooves as deep as the lower silicon layer;
第六步,进一步对所述绝缘体上硅片的下硅层以及氧化埋层进行刻蚀,形成一定深度的凹陷区和深至所述上硅层的槽;The sixth step, further etching the lower silicon layer and the buried oxide layer of the silicon-on-insulator wafer to form a recessed area with a certain depth and a groove as deep as the upper silicon layer;
第七步,在所述深至上硅层的槽中淀积金属,引出电极;The seventh step, depositing metal in the groove as deep as the upper silicon layer, and extracting the electrode;
第八步,通过光刻以及刻蚀,在所述绝缘体上硅片底面上的相应位置刻蚀出深至上硅层的图形,形成质量块、谐振梁以及梳齿结构;In the eighth step, through photolithography and etching, a pattern as deep as the upper silicon layer is etched at the corresponding position on the bottom surface of the silicon wafer on the insulator to form a mass block, a resonant beam and a comb-tooth structure;
第九步,将所述绝缘体上硅片底面上的二氧化硅层去除;The ninth step, removing the silicon dioxide layer on the bottom surface of the silicon wafer on the insulator;
第十步,将所述绝缘体上硅片的底面与下盖板进行阳极键合;The tenth step, anodic bonding the bottom surface of the silicon wafer on the insulator and the lower cover plate;
第十一步,对所述绝缘体上硅片的顶面进行刻蚀,将暴露在外的上硅层去除,形成自由活动的质量块、谐振梁以及梳齿结构;The eleventh step is to etch the top surface of the silicon-on-insulator chip, and remove the exposed upper silicon layer to form a free-moving mass block, a resonant beam and a comb-tooth structure;
第十二步,将所述绝缘体上硅片顶面的氮化硅层去除,并进一步对暴露在外的上硅层进行刻蚀至一定深度;In the twelfth step, the silicon nitride layer on the top surface of the silicon-on-insulator wafer is removed, and the exposed upper silicon layer is further etched to a certain depth;
第十三步,将所述绝缘体上硅片顶面的二氧化硅层去除;The thirteenth step, removing the silicon dioxide layer on the top surface of the silicon wafer on the insulator;
第十四步,将所述绝缘体上硅片的顶面与上盖板进行键合,形成完整的加速度计。In the fourteenth step, the top surface of the silicon-on-insulator chip is bonded to the upper cover plate to form a complete accelerometer.
对于所述下盖板的制造工艺还包括:The manufacturing process for the lower cover plate also includes:
第一步,通过光刻和刻蚀,在所述下盖板的底面上刻蚀出多个孔;In the first step, through photolithography and etching, a plurality of holes are etched on the bottom surface of the lower cover plate;
第二步,在所述孔中淀积金属;the second step, depositing metal in the hole;
第三步,在所述下盖板的顶面进行刻蚀,形成键合凹陷区;In the third step, etching is performed on the top surface of the lower cover plate to form a bonding recessed area;
第四步,在所述键合凹陷区中淀积金属,在与所述孔中的金属相连接;The fourth step, depositing metal in the bonding recess area, and connecting with the metal in the hole;
对于所述上盖板的制造工艺还包括:通过光刻和刻蚀在所述上盖板的底层形成键合凹陷区。The manufacturing process of the upper cover plate further includes: forming a bonding concave region on the bottom layer of the upper cover plate by photolithography and etching.
所述刻蚀的方法为以下方法中的一种或多种方法:干法刻蚀或湿法刻蚀,所述干法刻蚀包括:硅的深度反应离子、反应离子、以及气态的二氟化氙刻蚀和氧化硅的反应离子、等离子、以及气态的氟化氢刻蚀。The etching method is one or more of the following methods: dry etching or wet etching, and the dry etching includes: deep reactive ions of silicon, reactive ions, and gaseous difluorine Reactive ion, plasma, and gaseous hydrogen fluoride etching of xenon and silicon oxide.
用于湿法刻蚀所述上硅层及下硅层的刻蚀剂为以下刻蚀剂中的一种或多种的组合:氢氧化钾、四甲基氢氧化铵、或乙二胺邻苯二酚腐蚀液。The etchant used for wet etching the upper silicon layer and the lower silicon layer is a combination of one or more of the following etchants: potassium hydroxide, tetramethylammonium hydroxide, or ethylenediamine Hydroquinone etchant.
所述用于湿法刻蚀所述二氧化硅层的刻蚀剂为以下刻蚀剂中的一种或多种的组合:氢氟酸以及缓冲氢氟酸。The etchant for wet etching the silicon dioxide layer is a combination of one or more of the following etchants: hydrofluoric acid and buffered hydrofluoric acid.
相对于传统的加速度计,本发明的技术方案具有以下优点:首先,本发明采用了检测谐振梁的谐振频率变化来检测加速度。相对于传统技术中通过检测电容变化来检测加速度的方式精度更高,也减少了传统加速度计中机械耦合的问题。而且检测频率的方式也更容易转化为数字信号,对后期的信号处理以及对计算机的接口也更加容易。其次,本发明中采用了一整块质量块来检测X、Y、Z轴三个方向上的加速度,降低了使用多个质量块之间的串扰和噪音。此外,相对于三个单独的质量块来说,一个质量块的体积和质量都更大,使得本加速度计的检测灵敏度也更高,也减少了各个质量块之间的串扰。本加速度计通过差分来检测频率,一方面增加了检测精度,另一方面也减少了外界加速度变化而产生的非线性变化对谐振梁频率的影响。Compared with the traditional accelerometer, the technical solution of the present invention has the following advantages: First, the present invention adopts the detection of the resonant frequency change of the resonant beam to detect the acceleration. Compared with the traditional method of detecting acceleration by detecting capacitance changes, the accuracy is higher, and the problem of mechanical coupling in traditional accelerometers is also reduced. Moreover, the method of detecting frequency is also easier to convert into digital signal, and it is also easier to process the signal in the later stage and interface to the computer. Secondly, in the present invention, a whole mass block is used to detect the accelerations in the three directions of X, Y and Z axes, which reduces the crosstalk and noise between using multiple mass blocks. In addition, compared with three separate mass blocks, the volume and mass of one mass block are larger, so that the detection sensitivity of the accelerometer is also higher, and the crosstalk between the various mass blocks is also reduced. The accelerometer detects the frequency through the difference, which increases the detection accuracy on the one hand, and reduces the influence of the nonlinear change caused by the external acceleration change on the frequency of the resonant beam.
附图说明Description of drawings
图1为加速度计的侧视图。Figure 1 is a side view of an accelerometer.
图2为本加速度计器件层的俯视图。FIG. 2 is a top view of the device layer of the accelerometer.
图3为加速度计中检测水平方向加速度的谐振梁的放大示意图。FIG. 3 is an enlarged schematic diagram of a resonant beam in an accelerometer for detecting acceleration in a horizontal direction.
图4为加速度计中检测垂直方向上加速度的谐振梁组示意图。FIG. 4 is a schematic diagram of a resonant beam group for detecting acceleration in a vertical direction in an accelerometer.
图5为加速度计中垂直方向上未出现和出现加速度时质量块和谐振梁的示意图。Figure 5 is a schematic diagram of the mass and the resonant beam in the accelerometer when no and no acceleration occurs in the vertical direction.
图6为加速度计芯片制造工艺的初始状态以及第一步的示意图。FIG. 6 is a schematic diagram of the initial state and the first step of the manufacturing process of the accelerometer chip.
图7为加速度计芯片制造工艺的第二步、第三步示意图。FIG. 7 is a schematic diagram of the second step and the third step of the manufacturing process of the accelerometer chip.
图8为加速度计芯片制造工艺的第四步、第五步示意图。FIG. 8 is a schematic diagram of the fourth step and the fifth step of the manufacturing process of the accelerometer chip.
图9为加速度计芯片制造工艺的第六步、第七步示意图。FIG. 9 is a schematic diagram of the sixth step and the seventh step of the manufacturing process of the accelerometer chip.
图10为加速度计芯片制造工艺的第八步、第九步示意图。FIG. 10 is a schematic diagram of the eighth and ninth steps of the manufacturing process of the accelerometer chip.
图11为加速度计芯片制造工艺的第十步、第十一步示意图。FIG. 11 is a schematic diagram of the tenth and eleventh steps of the manufacturing process of the accelerometer chip.
图12为加速度计芯片制造工艺的第十二步、第十三步示意图。FIG. 12 is a schematic diagram of the twelfth and thirteenth steps of the accelerometer chip manufacturing process.
图13为加速度计芯片制造工艺的第十四步示意图。FIG. 13 is a schematic diagram of the fourteenth step of the manufacturing process of the accelerometer chip.
图14为加速度计芯片制造工艺的第十五步示意图。FIG. 14 is a schematic diagram of the fifteenth step of the manufacturing process of the accelerometer chip.
图15为加速度计芯片制造工艺的第十六步示意图.Figure 15 is a schematic diagram of the sixteenth step of the accelerometer chip manufacturing process.
图16为加速度计芯片制造工艺的第十七步示意图。FIG. 16 is a schematic diagram of the seventeenth step of the manufacturing process of the accelerometer chip.
图17为加速度计芯片制造工艺的第十八步示意图。FIG. 17 is a schematic diagram of the eighteenth step of the manufacturing process of the accelerometer chip.
图18为加速度计芯片制造工艺的第十九步示意图。FIG. 18 is a schematic diagram of the nineteenth step of the manufacturing process of the accelerometer chip.
图19为加速度计芯片制造工艺的第二十步示意图。FIG. 19 is a schematic diagram of the twentieth step of the manufacturing process of the accelerometer chip.
图20为加速度计芯片中盖板制造工艺的初始状态和第一步示意图。FIG. 20 is a schematic diagram of the initial state and the first step of the cover plate manufacturing process in the accelerometer chip.
图21为加速度计芯片中盖板制造工艺的第二步、第三步示意图。FIG. 21 is a schematic diagram of the second and third steps of the manufacturing process of the cover plate in the accelerometer chip.
图22为加速度计芯片中盖板制造工艺的第四步、第五步示意图。FIG. 22 is a schematic diagram of the fourth and fifth steps of the manufacturing process of the cover plate in the accelerometer chip.
上盖板1、器件层2、下盖板3、电极4、上硅层5、下硅层6、二氧化硅层7、氮化硅层8、锚点21、解耦梁22、质量块23、镂空部231、谐振梁24、梳齿结构25、
具体实施方式Detailed ways
下面将结合实施例以及附图对本发明加以详细说明,需要指出的是,所描述的实施例仅旨在便于对本发明的理解,而对其不起任何限定作用。The present invention will be described in detail below with reference to the embodiments and the accompanying drawings. It should be noted that the described embodiments are only intended to facilitate the understanding of the present invention, but do not have any limiting effect on it.
图1示出了本发明中MEMS加速度计的侧视图,其中包括上盖板1、器件层2以及下盖板3。优选地,所述器件层2由绝缘体上硅片(SOI硅片)制成,绝缘体上硅片包括:上硅层5和下硅层6,上硅层5和下硅层6之间设置有一层二氧化硅层7将上硅层5和下硅层6进行电隔离。这层二氧化硅层7也被称为氧化埋层。所述在图1中,所述下盖板3中淀积有金属电极4,但该电极也可以设置在上盖板1中,器件层2也可以做出相应的位置对调调整。FIG. 1 shows a side view of the MEMS accelerometer of the present invention, which includes an
图2示出了本MEMS加速度器件层2,其中包括锚点21、与所述锚点21相连接的解耦梁22以及与所述解耦梁22相连接的质量块23。其中,解耦梁22与锚点21连接形成外围框架,再通过Y型音叉式解耦梁与质量块22相连接。通过Y型音叉式解耦梁来连接质量块22的主要目的在于减弱X,Y,Z三个方向各个方向之间的正交耦合误差。首选Y型音叉式解耦梁22在于其在X,Y平面上的轴间耦合度小,并且能够卸除掉键合工艺时的残余应力。FIG. 2 shows the MEMS
参照图1至图4。在质量块22的四周分别对称设置有谐振梁24组,质量块中还形成有多个镂空部231,在镂空部231中也设置有谐振梁24。谐振梁24的两个末端由锚点21固定。谐振梁24与质量块23之间分别形成有梳齿结构25。在谐振梁24与质量块23相反的一端设置有电极4。所述电极4与谐振梁24之间也形成有梳齿结构25。在工作过程中,电极4会向谐振梁24施加一个电信号,驱动所述谐振梁24按照一定频率进行振动。其中,设置在质量块23四周的谐振梁24组是用于检测在X,Y水平平面中的加速度变化。当出现水平加速度时,质量块23会沿着加速度方向产生相应的位移,该位移会使得质量块23和谐振梁24之间的梳齿25的间距产生变化,以至于施加在谐振梁24上的静电力产生变化,进而改变了谐振梁24的谐振频率。从图2中可以看出,谐振梁24均是成对地对称设置在质量块的两端。在检测加速度的过程中,质量块一端的谐振梁24的静电力会变大,而相反一端谐振梁24上的静电力则会变小。通过差分式的检测方式,可以检测出两组谐振梁24的差分谐振频率,进而计算出加速度的方向和幅度。通过差分的检测方式有效地抑制了共模误差和干扰。Referring to Figures 1 to 4 . A group of
参照图1、图2以及图4,设置在质量块23的镂空部231中的谐振梁24组是用于检测Z轴方向上的加速度。在检测Z轴方向上的加速度时,本发明采用了将谐振梁24与质量块23之间梳齿25高度不同的方式来进行检测。其中,设置在谐振梁24上的梳齿24a高度小于设置在质量块23上的梳齿23a高度,谐振梁24上的梳齿24a高度也小于质量块23在Z轴垂直方向上的位移幅度。在一个优选实施例中,所述谐振梁24上的梳齿24a高度为质量块23上梳齿23a高度的一半。此外,在用于检测Z轴加速度的两组谐振梁24中,一组谐振梁24的梳齿24a底端与质量块23上梳齿23a的底端向齐平。另一组谐振梁24的梳齿24a顶端与质量块23上梳齿23a的顶端向齐平。进而根据质量块23在Z轴方向上位移的方向,两组谐振梁24所受到的静电力变化则会不同。例如,当质量块23因外界加速度向上位移时,与质量块23梳齿顶端向齐平的谐振梁24梳齿与质量块23梳齿则不会产生重叠面积的变化,以至于与质量块23梳齿顶端向齐平的谐振梁24不产生任何静电力的变化。与此同时,与质量块23梳齿底端向齐平的谐振梁24梳齿则会因为梳齿重叠面积变小而导致静电力的减少,进而产生谐振梁24的谐振频率变化。并根据这两组谐振梁24的频率变化差分得出Z轴上的加速度。Referring to FIG. 1 , FIG. 2 and FIG. 4 , the group of
接下来,参照图6至图19对本加速度计的制造工艺进行进一步的描述。其中,本加速度计的器件层2采用了绝缘体上硅(SOI)结构,其包括上硅层5,下硅层6以及设置在上硅层5和下硅层6之间的二氧化硅层7。其中,二氧化硅层7也可被称为氧化埋层。其具体的加工步骤包括:Next, the manufacturing process of the present accelerometer will be further described with reference to FIGS. 6 to 19 . The
第一步,利用高温生长或者化学淀积法,在绝缘体上硅片的顶面和底面上形成二氧化硅层7。In the first step,
第二步,在所述绝缘体上硅硅晶圆片的顶面上涂覆光刻胶,之后按照特定图案对所述底面进行曝光,并用显影剂将已曝光的光刻胶去除,及将未经曝光的光刻胶烘烤。这样被曝光的图案就会显现出来。再用反应离子或等离子干法刻蚀、或氢氟酸对SOI硅片顶面的二氧化硅层7进行刻蚀,将一部分上硅层5暴露出来。In the second step, photoresist is coated on the top surface of the silicon-on-insulator wafer, and then the bottom surface is exposed according to a specific pattern, and the exposed photoresist is removed with a developer, and the unexposed photoresist is removed. The exposed photoresist is baked. In this way, the exposed pattern will be revealed. Then, the
第三步,通过等离子体化学汽相淀积(PECVD)的方法在SOI硅片的顶面上进一步淀积一层氮化硅层8。In the third step, a
第四步,在所述绝缘体上硅硅晶圆片的顶面上涂覆光刻胶,之后按照特定图案对所述底面进行曝光,并用显影剂将已曝光的光刻胶去除,及将未经曝光的光刻胶烘烤。这样被曝光的图案就会显现出来。再用反应离子或等离子干法刻蚀、或氢氟酸对SOI硅片顶面的氮化硅层8和二氧化硅层7进行刻蚀,形成多个深至上硅层5的槽。In the fourth step, photoresist is coated on the top surface of the silicon-on-insulator wafer, and then the bottom surface is exposed according to a specific pattern, and the exposed photoresist is removed with a developer, and the unexposed photoresist is removed. The exposed photoresist is baked. In this way, the exposed pattern will be revealed. Then, the
第五步,在SOI硅片的底面上涂覆光刻胶,之后按照特定图案对所述底面进行曝光,并用显影剂将已曝光的光刻胶去除,及将未经曝光的光刻胶烘烤。再用反应离子或等离子干法刻蚀、或氢氟酸对SOI硅片底面的二氧化硅层7进行刻蚀,形成多个深至下硅层6的槽。In the fifth step, a photoresist is coated on the bottom surface of the SOI silicon wafer, and then the bottom surface is exposed according to a specific pattern, and the exposed photoresist is removed with a developer, and the unexposed photoresist is baked. bake. Then, the
第六步,利用深度反应离子刻蚀、或氢氧化钾、或四甲基氢氧化氨、或乙二胺磷苯二酚,对第四步中形成的深至下硅层6的槽进一步刻蚀,形成凹陷区和多个深至氧化埋层7的槽。The 6th step, utilizes deep reactive ion etching, or potassium hydroxide, or tetramethyl ammonium hydroxide, or ethylenediamine phosphine, further engraves the groove deep to the
第七步,用反应离子或等离子干法刻蚀、或氢氟酸进一步刻蚀暴露在外的氧化埋层7,使得槽深至上硅层5。In the seventh step, the exposed buried
第八步,在所述槽中淀积金属,引出电极4。In the eighth step, metal is deposited in the groove, and the
第九步,重新在SOI硅片的底面上涂覆光刻胶,之后按照特定图案对所述底面进行曝光,并用显影剂将已曝光的光刻胶去除,及将未经曝光的光刻胶烘烤。再用反应离子或等离子干法刻蚀、或氢氟酸对SOI硅片底面的二氧化硅层7进行刻蚀,将下硅层6暴露出来。The ninth step, re-coating photoresist on the bottom surface of the SOI silicon wafer, and then exposing the bottom surface according to a specific pattern, removing the exposed photoresist with a developer, and removing the unexposed photoresist. bake. Then, the
第十步,利用深度反应离子刻蚀、或氢氧化钾、或四甲基氢氧化氨、或乙二胺磷苯二酚进一步刻蚀下硅层,直至所述凹陷区深至氧化埋层7。The tenth step is to further etch the lower silicon layer by using deep reactive ion etching, or potassium hydroxide, or tetramethyl ammonium hydroxide, or ethylenediamine phosphoroquinone, until the recessed area is as deep as the buried
第十一步,用反应离子或等离子干法刻蚀、或氢氟酸进一步刻蚀暴露在外的氧化埋层7,使得凹陷区深至上硅层5。In the eleventh step, the exposed buried
第十二步,再用反应离子或等离子干法刻蚀、或氢氟酸对SOI硅片暴露在外的上硅层5和下硅层6进行刻蚀至一定深度。In the twelfth step, reactive ion or plasma dry etching or hydrofluoric acid is used to etch the exposed
第十三步,用反应离子或等离子干法刻蚀、或氢氟酸进一步刻蚀暴露在外的氧化埋层7。In the thirteenth step, the exposed buried
第十四步,用反应离子或等离子干法刻蚀、或氢氟酸将所述SOI硅片底面上的二氧化硅层7去除。In the fourteenth step, the
第十五步,使用阳极键合或者金属热压键合,将所述绝缘体上硅硅晶圆片的底面与预先制作的下盖板3键合在一起。In the fifteenth step, the bottom surface of the silicon-on-insulator wafer and the prefabricated
第十六步,利用深度反应离子刻蚀、或氢氧化钾、或四甲基氢氧化氨、或乙二胺磷苯二酚将暴露在外的上硅层5去除,形成自由活动的解耦梁22、质量块23以及谐振梁24。In the sixteenth step, the exposed
第十七步,用反应离子或等离子干法刻蚀、或氢氟酸去除SOI硅片顶面上的氮化硅层8。In the seventeenth step, the
第十八步,利用深度反应离子刻蚀、或氢氧化钾、或四甲基氢氧化氨、或乙二胺磷苯二酚进一步对暴露在外的上硅层5进行刻蚀至一定深度,形成不同高度的梳齿结构25。In the eighteenth step, the exposed
第十九步,用反应离子或等离子干法刻蚀、或氢氟酸去除SOI硅片顶面上的二氧化硅层7。In the nineteenth step, the
第二十步,使用阳极键合或者金属热压键合,将所述绝缘体上硅硅晶圆片的顶面与预先制作的上盖板1键合在一起,形成完整的加速度计结构。In the twentieth step, using anodic bonding or metal thermocompression bonding, the top surface of the silicon-on-insulator wafer and the prefabricated
参照图20至图22,其中,本发明中对于下盖板3的加工工艺还包括以下步骤:20 to 22, wherein, the processing technology for the
第一步,在下盖板3的底面上涂覆光刻胶,之后按照特定图案对所述底面进行曝光,并用显影剂将已曝光的光刻胶去除,及将未经曝光的光刻胶烘烤。再对下盖板3的底面进行刻蚀,形成深孔。In the first step, a photoresist is coated on the bottom surface of the
第二步,在下盖板3的顶面上涂覆光刻胶,之后按照特定图案对所述底面进行曝光,并用显影剂将已曝光的光刻胶去除,及将未经曝光的光刻胶烘烤。再对下盖板3的顶面进行刻蚀形成键合凹陷区。In the second step, photoresist is coated on the top surface of the
第三步,在下盖板3底面的深孔中淀积金属,引出电极4。In the third step, metal is deposited in the deep hole on the bottom surface of the
第四步,对下盖板3的顶面进行化学机械抛光(CMP),使得电极4连通键合凹陷区。In the fourth step, chemical mechanical polishing (CMP) is performed on the top surface of the
第五步,在下盖板3的顶面的键合凹陷区内的相应位置淀积金属。In the fifth step, metal is deposited at the corresponding position in the bonding recessed area on the top surface of the
参照图6至图19,本发明中的上盖板1和下盖板3也可以由玻璃制成。使用玻璃制作盖板的优点在于:硅-玻璃键合温度低,不会影响之前的金属电极及引线。当上盖板1和下盖板3由玻璃制成时,上述制造工艺步骤中的第十五步以及第二十步则会采用硅-玻璃键合,将所述绝缘体上硅硅晶圆片与所述上盖板1和下盖板3相键合。6 to 19 , the
本发明中所述的深度刻蚀及所述刻蚀的方法为以下方法中的一种或多种方法:干法刻蚀或湿法刻蚀,所述干法刻蚀包括:硅的深度反应离子、反应离子、以及气态的二氟化氙刻蚀和氧化硅的反应离子、等离子、以及气态的氟化氢刻蚀。The deep etching and the etching method described in the present invention are one or more of the following methods: dry etching or wet etching, and the dry etching includes: deep reaction of silicon Ion, reactive ion, and gaseous xenon difluoride etch and reactive ion, plasma, and gaseous hydrogen fluoride etch of silicon oxide.
用于湿法刻蚀所述上硅层及下硅层的刻蚀剂为以下刻蚀剂中的一种或多种的组合:氢氧化钾、四甲基氢氧化铵、或乙二胺邻苯二酚腐蚀液。The etchant used for wet etching the upper silicon layer and the lower silicon layer is a combination of one or more of the following etchants: potassium hydroxide, tetramethylammonium hydroxide, or ethylenediamine Hydroquinone etchant.
所述用于湿法刻蚀所述二氧化硅层的刻蚀剂为以下刻蚀剂中的一种或多种的组合:氢氟酸以及缓冲氢氟酸。The etchant for wet etching the silicon dioxide layer is a combination of one or more of the following etchants: hydrofluoric acid and buffered hydrofluoric acid.
传统的MEMS加速度计通过检测梳齿之间电容变化来检测加速度,而本发明则采用了静电负刚度效应,并通过检测谐振梁上谐振频率的变化来检测加速度。相对于传统的加速度计来说,本发明有效地解决了传统带杠杆结构的谐振式加速度计中的机械耦合问题,而采用差分检测振动频率的方法也使得检测精度更高,系统也更加稳定。而通过差分的检测方式也使得整个加速度计的检测灵敏度提高了两倍。而且,检测频率更容易转化为数字信号,更方便与计算机进行接口,也减少了外界加速度变化而产生的非线性变化对谐振梁频率的影响。。此外,本发明采用了一整块质量块,使得质量块自身的体积更大,一方面增加了加速度计整体的检测灵敏度。另一方面也减少了各个质量块之间的耦合和串扰。The conventional MEMS accelerometer detects the acceleration by detecting the capacitance change between the comb teeth, while the present invention adopts the electrostatic negative stiffness effect and detects the acceleration by detecting the change of the resonant frequency on the resonant beam. Compared with the traditional accelerometer, the present invention effectively solves the mechanical coupling problem in the traditional resonant accelerometer with lever structure, and the method of differentially detecting vibration frequency also makes the detection accuracy higher and the system more stable. The differential detection method also doubles the detection sensitivity of the entire accelerometer. Moreover, the detection frequency is easier to convert into a digital signal, which is more convenient to interface with the computer, and also reduces the influence of the nonlinear change caused by the external acceleration change on the frequency of the resonant beam. . In addition, the present invention adopts a whole mass block, so that the volume of the mass block itself is larger, and on the one hand, the overall detection sensitivity of the accelerometer is increased. On the other hand, the coupling and crosstalk between the various masses are also reduced.
而且由于刻蚀工艺和硅的键合工艺较为简单,也使得本产品的生产效率极高、成本也较低。为此本工艺所制造的MEMS加速度计具有灵敏度高、误差小、成本低等优点。Moreover, since the etching process and the bonding process of silicon are relatively simple, the production efficiency of this product is extremely high and the cost is also low. Therefore, the MEMS accelerometer manufactured by this process has the advantages of high sensitivity, small error and low cost.
最后应当说明的是,以上实施例仅用以说明本发明的技术方案,而非对本发明保护范围的限制,尽管参照较佳实施例对本发明作了详细地说明,本领域的普通技术人员应当理解,可以对本发明的技术方案进行修改或者等同替换,而不脱离本发明技术方案的实质和范围。Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present invention, not to limit the protection scope of the present invention. Although the present invention has been described in detail with reference to the preferred embodiments, those of ordinary skill in the art should understand that , the technical solutions of the present invention may be modified or equivalently replaced without departing from the spirit and scope of the technical solutions of the present invention.
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