CN104704603B - To be coated with sputter material layer in device and depositing system on substrate - Google Patents
To be coated with sputter material layer in device and depositing system on substrate Download PDFInfo
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- CN104704603B CN104704603B CN201280075041.6A CN201280075041A CN104704603B CN 104704603 B CN104704603 B CN 104704603B CN 201280075041 A CN201280075041 A CN 201280075041A CN 104704603 B CN104704603 B CN 104704603B
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- 238000000151 deposition Methods 0.000 title claims abstract description 57
- 239000000463 material Substances 0.000 title claims abstract description 43
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- 230000000712 assembly Effects 0.000 claims abstract description 186
- 230000003068 static effect Effects 0.000 claims description 17
- 238000000034 method Methods 0.000 claims description 16
- 230000008569 process Effects 0.000 claims description 12
- PEDCQBHIVMGVHV-UHFFFAOYSA-N Glycerine Chemical compound OCC(O)CO PEDCQBHIVMGVHV-UHFFFAOYSA-N 0.000 claims description 5
- 238000004062 sedimentation Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 description 24
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 14
- 230000003628 erosive effect Effects 0.000 description 13
- 238000010586 diagram Methods 0.000 description 10
- 238000007560 sedimentation technique Methods 0.000 description 8
- 238000004544 sputter deposition Methods 0.000 description 8
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- 239000002245 particle Substances 0.000 description 6
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- 230000008859 change Effects 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
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- 238000009795 derivation Methods 0.000 description 2
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- 239000011888 foil Substances 0.000 description 2
- 239000008187 granular material Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- XOJVVFBFDXDTEG-UHFFFAOYSA-N Norphytane Natural products CC(C)CCCC(C)CCCC(C)CCCC(C)C XOJVVFBFDXDTEG-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The present invention describes a kind of to be coated with sputter material layer in the device (10 on substrate (12)；166；224).Described device (10；166；224) at least two magnet assemblies (60,74,82,90,98,106) are included, wherein each magnet assemblies (60,74,82,90,98,106) have outer magnetic pole and internal magnetic pole.The outer magnetic pole of one of at least two magnet assemblies (60,74,82,90,98,106) is different from the adjacent outer magnetic pole of the other of at least two magnet assemblies (60,74,82,90,98,106).Also, the present invention describes a kind of depositing system (14), the depositing system includes described device (10；166；224).
Description
Technical field
Embodiments of the invention are related to a kind of to be coated with sputter material layer in the device on substrate.Device includes at least two
Individual magnet assemblies, wherein each magnet assemblies have outer magnetic pole and internal magnetic pole.Especially, embodiments of the invention are related to one
Depositing system is planted, the depositing system includes described device.
Background technology
Material layer can be coated on substrate via so-called sputtering process (sputtering process).Typically,
It is, with the ionic bombardment target (target) in plasma, and the particle on target to be hit in the sputtering process.It is logical
Often, substrate is arranged at the opposite side of target.Negative electrode attracts ion, and negative electrode in itself can be as target, or works as from substrate direction
When from the point of view of the direction of target, negative electrode may be disposed at after target.The particle for being knocked off target is deposited on substrate to form sputter
Material layer.Target arrangement of magnets is may be close to limit plasma.The movement is referred to as magnetic control sputtering plating (magnetron
sputtering).The magnetic field meeting existing electric field of superposition produced by these magnet, and according to so-called Lorentz force
(Lorentz force) and influence the behavior of electronics in plasma.Whereby, particularly in the near surface of target, plasma
Plasma density in body can be controlled methodically.The situation can also increase the granule number for being knocked off target, and
Therefore deposition velocity is improved.
To be coated with sputter material layer in the device on substrate and respective depositing system be in order at it is a variety of deposition purposes and
Use.The design of such a apparatus and system is different according to the particular demands of depositing operation.For example, exist different types of
Target and negative electrode.During using plane formula negative electrode, the coating material of sputter to be configured as the planar targets of even shape, so
And；When the target material surface of rotatable cathode is bending, target is configured specifically to the form of stylostome.Using magnetic control sputtering plating
Magnet assemblies can have the combination of target cathode in the lump.Such a magnet assemblies include outer magnetic pole and internal magnetic pole, outer magnetic pole
Property and internal magnetic pole are different from each other and can form the component of ring-type.For example, such a magnet assemblies include yoke and several magnetic
Iron is arranged, wherein each magnet arrangements have each specific magnetic polarity towards plasma direction.Whereby, towards plasma
The outer magnetic ring of body can have different magnetic polarities compared to interior magnetic arrangement.
In the device on substrate it can be used for technique (dynamic in-line in dynamic line to be coated with sputter material layer
Process), wherein material is coated on mobile substrate.This device can be also used for static sedimentation technique, and wherein substrate is static
And do not move.Especially, for the deposition of large area, two or more targets or negative electrode are arranged side by side on processing
In room, target array and/or cathode array are formed whereby.
In sputtering process, expect to reach uniform target erosion.It has now been found that using the negative electrode with multiple negative electrodes
The erosion external form that array will cause target that there is the stub area in target hot ring is presented.
The content of the invention
In view of above-mentioned be used to being coated with sputter material layer in the device on substrate and a kind of include described device there is provided a kind of
Depositing system.Other side, advantage and the feature of the present invention is apparent according to dependent claims, description and accompanying drawing.
According to embodiment there is provided a kind of to be coated with sputter material layer in the device on substrate.Device includes at least two
Magnet assemblies, wherein each magnet assemblies have outer magnetic pole and internal magnetic pole.Outside one of at least two magnet assemblies
Magnetic polarity is different from the adjacent outer magnetic pole of the other of at least two magnet assemblies.
According to another embodiment there is provided a kind of depositing system, the depositing system include to be coated with sputter material layer in
Described device on substrate.This depositing system includes the process chamber to house this device.
According to another embodiment, it is a kind of to be coated with sputter material layer in the device on substrate include at least two group of magnets
Part, wherein there is each magnet assemblies external magnet to arrange and internal magnet arrangement.In said device, at least two magnet assemblies
One of external magnet arrangement have towards the South Pole (south pole) of substrate or plasma.In at least two magnet assemblies
The adjacent external magnet arrangement of another one have towards the arctic (north pole) of substrate or plasma.According to the present invention
Embodiment, it is possible to by one or more features of the feature of the device of the present embodiment and other embodiments described herein
With reference to.
According to another embodiment, it is a kind of to be coated with sputter material layer in the device on substrate include at least two group of magnets
Part, wherein there is each magnet assemblies external magnet to arrange and internal magnet arrangement.In said device, at least two magnet assemblies
One of external magnet arrangement with generating magnetic polarity towards the first of substrate, and the other of at least two magnet assemblies
Adjacent external magnet configuration is with the second generation magnetic polarity towards substrate.Whereby, the first generation magnetic polarity and the second generation magnetic
Polarity is different from each other.With an embodiment of the invention it is possible to by the feature of the device of the present embodiment with it is described herein
Other embodiments one or more features combine.
According to another embodiment, it is a kind of to be coated with sputter material layer in the device on substrate include at least two group of magnets
Part.Each magnet assemblies have magnet, and the magnet has different magnetic polar orientations relative to each other.Whereby, at least two
The external magnet of one of magnet assemblies has compared with the adjacent external magnet of the other of at least two magnet assemblies
There are different magnetic polar orientations.With an embodiment of the invention it is possible to which the feature of the device of the present embodiment is retouched with this paper
One or more features for the other embodiments stated are combined.According to another embodiment, the different magnetic polar orientation of this term represents phase
Angle between the magnetic polar orientation of adjacent external magnet is more than 90 °.Especially, the angle between magnetic polar orientation is more than 150 °,
E.g. 180 °.
Brief description of the drawings
Specification remaining part especially specifically to those of ordinary skill in the art elaborate comprehensively and can be real
The disclosure applied, including most preferred embodiment and including the reference to accompanying drawing, wherein：
Fig. 1 illustrates being located in exemplary deposition system to be coated with sputter material layer according to embodiment described herein
In the schematic diagram of the exemplary device on substrate.
Fig. 2 is illustrated according to embodiment described herein with to be coated with sputter material layer in the device on substrate
Rotatable pipe negative electrode diagrammatic cross-section.
Fig. 3 A illustrate being used for be coated with sputter material layer in the demonstration on substrate according to embodiment described herein
The schematic diagram of magnet assemblies in property device.
Fig. 3 B are illustrated according to embodiment described herein to be coated with sputter material layer in the exemplary dress on substrate
Another schematic diagram put.
Fig. 4 is illustrated according to embodiment described herein to be coated with number of the sputter material layer in the device on substrate
The schematic top plan view of individual magnet assemblies.
Fig. 5 is illustrated according to the another to be coated with sputter material layer in exemplary on substrate of embodiment described herein
The schematic diagram of device.
Fig. 6 is illustrated according to embodiment described herein with to be coated with sputter material layer in the device on substrate
Three magnet assemblies diagrammatic cross-section, three magnet assemblies are distributed to single plane formula negative electrode.
Fig. 7 illustrates the schematic diagram of another exemplary deposition system according to embodiment described herein, the deposition system
System has several negative electrodes be arrangeding in parallel.
Embodiment
With detailed reference to various embodiments of the present invention, one or more examples of the embodiment are said in Zhu Tuzhong
It is bright.In description below to accompanying drawing, similar elements symbol refers to similar elements.Usually, only describe on each embodiment
Difference.Each example is provided by explaining the present invention, and not meant as the limitation of the present invention.Further, make
Illustrated by the part of one embodiment or description feature can be used for other embodiments on or and other embodiments combination
Using to produce further embodiment.This description is intended to contain such modification and change.
Fig. 1 is illustrated in depositing system 14 to be coated with sputter material layer in the schematic diagram of the device 10 on substrate 12.
Especially, Fig. 1 illustrates the profile of device 10 and depositing system 14.Depositing system 14 is to be coated with sputter material layer in substrate
On system.Term as used herein " substrate " should include non-flexible base plate and flexible base plate, non-flexible base plate example
Wafer (wafer), crystal wafer (be, for example, sapphire or the like) or sheet glass in this way, flexible base plate is, for example, mesh
Or paillon foil (foil) (web).
Device 10 includes six targets and/or negative electrode 16,18,20,22,24 and 26, and the negative electrode is hereinafter referred to as the moon
Pole 16~26.Negative electrode 16~26 is connected to negative voltage.Each negative electrode 16~26 has the form of open column shape body or tubular body, and
And can be rotated along the longitudinal axis of column or tubular body.Each distribution of negative electrode 16~26 is to target, and the target is typically to splash
The solid body of material for coated substrates 12 is provided in depositing process.Here, each target has the form of open column shape body.
Further, it is each distribution of negative electrode 16~26 magnet assemblies.Each magnet assemblies include a number of magnet arrangements, described
Magnet arrangements can be an arrangement) or a string of permanent magnets.At least one of magnet string (magnet series) has
At least another one in outer magnetic pole, and magnet string has internal magnetic pole.Magnet assemblies are arranged in open column shape negative electrode and approached
In target so that magnetic field can penetrate target.Distribute to the target and magnet assemblies of negative electrode 16~26 and be not illustrated in Fig. 1, and
It will be more fully described with reference to Fig. 2.
According to embodiment described herein there is provided a kind of to be coated with sputter material layer in the device on substrate.Device
Including at least two magnet assemblies 60, such as shown in Fig. 3 A.Each magnet assemblies 60 have outer magnetic pole and internal magnetic pole, wherein
The phase of the other of at least two magnet assemblies that the outer magnetic pole of one of at least two magnet assemblies is different from
Adjacent outer magnetic pole.As shown in Figure 3 B, the external magnet arrangement 364,368 and 365 in Fig. 3 A has towards substrate and/or plasma
There are different polarity, this situation is indicated in figure 3 a by different structures (oblique angle line is relative to vertical line).External magnet
The formation loop of side 365 is arranged through, the loop is around internal magnet arrangement 366.For example, it is upper in Fig. 3 A
The internal magnet arrangement 366 of portion's magnet assemblies 60 can have towards the bottom magnetic in the arctic of plasma and/or substrate, and Fig. 3 A
The internal magnet arrangement 366 of iron component 60 can have towards the South Pole of plasma and/or substrate, and the upper magnet group in Fig. 3 A
The external magnet arrangement 364,365 and 368 of part 60 can have towards the bottom in the South Pole of plasma and/or substrate, and Fig. 3 A
The external magnet arrangement 364,365 and 368 of magnet assemblies 60 can have towards the arctic of plasma and/or substrate.
For the cathode array oriented without alternate magnet, transfer of the electronics from negative electrode to negative electrode all exists forever
Carried out on same direction so that this effect adds up always from negative electrode to negative electrode.Such case can be caused between all negative electrodes
Cross-talk (crosstalk).As shown in Figure 3A, this phenomenon this can by least one pair of neighbouring negative electrode use alternate magnetic
Polarity is avoided.Due to magnetic polarity on the contrary, the direction that electronics drifts about in magnetron is reversed.Due to reverse, the master of drift bearing
The position of electrical losses is wanted to move to opposite side by the side of turn-around portion (turnaround).Whereby, by complete negative electrode
Uniform target erosion is provided on the whole target length of array, the service efficiency of target can increase.
Fig. 1 is refer to back, according to some embodiments, anode 28,30,32,34,36,38 and 40 can be adjacent to negative electrode 16
~26 are set.Anode 28~40 can have post type.The longitudinal axis of negative electrode 16~26 is parallel with the longitudinal axis of anode 28~40 to be set
Put.In apparatus 10, anode 28 is arranged on the starting end of anode-cathode arrangement, and anode 40 is arranged on end.Anode 30~38
It is arranged between negative electrode 16~26 so that anode 28~40 replaces with negative electrode 16~26.Therefore, each of negative electrode 16~26
With two adjacent anodes.Each anode 28~40 is connected to positive voltage.It should be clear that for application-specific, dress
Putting the quantity of the anode in 10 and negative electrode optionally can change and adjust.
Depositing system 14 as shown in Figure 1 includes the process chamber 42 of accommodating device 10.Process chamber 42 can be configured to
The vacuum chamber being vented by the Vacuum flange of vacuum chamber.Plasma with ion and electronics can be in vacuum chamber
It is adjacent to negative electrode generation.Ion is used for hitting particle from target, and electronics is used for ionixedpiston.Further, sink
Product system 14 includes the cavity shield 44 for shielding processing room 42, pre-sputter shielding 46 and shade shielding 48.According to some realities
Mode is applied, pre-sputter shielding 46 can be connected to anode 28~40 via resistance 50.Cavity shield 44 can be grounded.In deposition system
There is provided to hold the substrate support 52 of substrate 12 in system 14.Substrate support 52 is set relative to anode 28~40 so that from target
The particle that material is hit can be deposited on substrate 12.
Fig. 2 is illustrated to be shown with the section to be coated with rotatable cathode 16 of the sputter material layer in the device 10 on substrate
It is intended to.Negative electrode 16 is shown as the representative typically with the other negative electrodes 18~26 similarly configured.Negative electrode 16 is managed after including
(backing tube) 54, rear pipe 54, which is, for example, one, has the hollow cylinder of tubular form.Pipe 54 after target 56 is connected to
Outer surface.Target 56 equally has open column shape form.Target 56 and rear pipe 54 can be rotated up in the side of arrow 58, i.e.
Rotate clockwise.However, target 56 and rear pipe 54 can also rotate in the counterclockwise direction.
Magnet assemblies 60 are arranged in negative electrode 16.Magnet assemblies 60 can include the yoke 62 of circular arc, three magnet 64,66 and
68 are placed in yoke 62.The magnet arrangements that magnet 64,66 and 68 can be made up of multiple single magnet.These single magnet with
Appropriate mode links together.Advantageously, these single magnet are permanent magnets.Each of magnet arrangements 64~68 have
There is specific magnetic polarity.Especially, these magnetic polarities have is respectively facing target, plasma and/or substrate as land used.Magnet cloth
The magnetic pole towards plasma can be for example by putting 64~68 feature.This magnetic pole can be the South Pole or the arctic.Further, magnetic
The feature of the magnetic polarity of iron arrangement 64~68 can be the gained magnetic polarity for being directed to target, plasma and/or substrate respectively
Type.Magnet arrangements 64 and 68 are referred to as external magnet arrangement, because the arrangement forms and arranges 66 around internal magnet
Ring body.Therefore, the magnetic polarity of magnet arrangements 64 and 68 is outer magnetic pole.Magnet arrangements 66 be referred to as internal magnet arrangement, this be because
Being arranged between external magnet in the interior zone between 64 and external magnet arrangement 68 for magnet assemblies 60 is arranged at for magnet arrangements 66.
Therefore, the magnetic polarity of magnet string 66 is internal magnetic pole.External magnet arrangement 64 and 68 has identical magnetic polarity, the magnetic pole respectively
Property be different from internal magnet string 66 magnetic polarity.Fig. 2 illustrates the field wire 70 and 72 in the magnetic field set up by magnet string 64~68.
Fig. 3 B illustrate to be coated with sputter material layer in another schematic diagram of the device 10 on substrate 12.Fig. 3 B illustrate negative electrode
16~26 profile, but the further feature of device 10 is omitted for preferably general introduction.The configuration pair of negative electrode 16~26
The configuration of negative electrode 16 that should be described in Fig. 2.As shown in Figure 3 B, the difference of negative electrode 16~26 be respective magnet assemblies
Specification.According to the embodiment that Fig. 3 B are described is combined, the magnetic polarity of external magnet arrangement replaces between each magnet assemblies.This situation
Mean that the magnetic polarity of internal magnet string also replaces between magnet assemblies.
In the present embodiment, negative electrode 16 is outer cathode, positioned at the left end of the row of negative electrode 16~26.Negative electrode 16 is included with outer
The magnet assemblies 60 of magnet string 64 and 68 and internal magnet string 66.External magnet string 64,68 has identical outer magnetic pole, described outer
Magnetic polarity is magnetic polarity N.The internal magnetic pole of internal magnet string 66 is magnetic polarity S, different from the outer magnetic pole N of magnet assemblies 60.
Next negative electrode in the row of negative electrode 16~26 is negative electrode 18.Negative electrode 18 is provided adjacent in the right-hand side of negative electrode 16.Negative electrode 18 is wrapped
Include the magnet assemblies 74 with external magnet string 76 and 78 and internal magnet string 80.External magnet string 76 is adjacent to neighbouring magnet assemblies
60 external magnet string 68 is set.Advantageously, the outer magnetic pole of external magnet string 76 is different from the outer magnetic pole of adjacent external magnet string 68
Property.Therefore, the outer magnetic pole of external magnet string 76 is magnetic polarity S.Because external magnet string 78 and external magnet string 76 have outside identical
Magnetic polarity, the outer magnetic pole of external magnet string 78 is also magnetic polarity S.Further, due to the internal magnet string 80 of magnet assemblies 74
Internal magnetic pole is different from outer magnetic pole, and internal magnetic pole is magnetic polarity N.Next negative electrode in the row of negative electrode 16~26 is negative electrode
20.Negative electrode 20 is provided adjacent in the right-hand side of negative electrode 18.Negative electrode 20 includes having external magnet string 84 and 86 and internal magnet string 88
Magnet assemblies 82.The external magnet string 78 that external magnet string 84 is adjacent to neighbouring magnet assemblies 74 is set.Advantageously, external magnet string
84 outer magnetic pole is different from the outer magnetic pole of adjacent external magnet string 78.Therefore, the outer magnetic pole of external magnet string 84 is magnetic pole
Property N.Because external magnet string 86 and external magnet string 84 have identical outer magnetic pole, the outer magnetic pole of external magnet string 86 is also magnetic pole
Property N.Further, because the internal magnetic pole of the internal magnet string 88 of magnet assemblies 82 is different from outer magnetic pole, internal magnetic pole is magnetic
Polarity S.Next negative electrode in the row of negative electrode 16~26 is negative electrode 22.Negative electrode 22 is provided adjacent in the right-hand side of negative electrode 20.
Negative electrode 22 includes the magnet assemblies 90 with external magnet string 92 and 94 and internal magnet string 96.External magnet string 92 is adjacent to neighbouring
The external magnet string 86 of magnet assemblies 82 is set.Advantageously, the outer magnetic pole of external magnet string 92 is different from adjacent external magnet string 86
Outer magnetic pole.Therefore, the outer magnetic pole of external magnet string 92 is magnetic polarity S.Because external magnet string 94 and external magnet string 92 have
Identical outer magnetic pole, the outer magnetic pole of external magnet string 94 is also magnetic polarity S.Further, due to the interior magnetic of magnet assemblies 90
The internal magnetic pole of iron string 96 is different from outer magnetic pole, and internal magnetic pole is magnetic polarity N.Next the moon in the row of negative electrode 16~26
Pole is negative electrode 24.Negative electrode 24 is provided adjacent in the right-hand side of negative electrode 22.Negative electrode 24 include with external magnet string 100 and 102 and
The magnet assemblies 98 of internal magnet string 104.The external magnet string 94 that external magnet string 100 is adjacent to neighbouring magnet assemblies 90 is set.Have
Sharp ground, the outer magnetic pole of external magnet string 100 is different from the outer magnetic pole of adjacent external magnet string 94.Therefore, external magnet string 100
Outer magnetic pole is magnetic polarity N.Because external magnet string 102 and external magnet string 100 have identical outer magnetic pole, external magnet string 102
Outer magnetic pole also be magnetic polarity N.Further, because the internal magnetic pole of the internal magnet string 104 of magnet assemblies 98 is different from outside
Magnetic polarity, internal magnetic pole is magnetic polarity S.Next and last negative electrode in the row of negative electrode 16~26 is negative electrode 26.It is cloudy
Pole 26 is provided adjacent in the right-hand side of negative electrode 24.Negative electrode 26 is included with external magnet string 108 and 110 and internal magnet string 112
Magnet assemblies 106.The external magnet string 102 that external magnet string 108 is adjacent to neighbouring magnet assemblies 98 is set.Advantageously, external magnet
The outer magnetic pole of string 108 is different from the outer magnetic pole of adjacent external magnet string 102.Therefore, the outer magnetic pole of external magnet string 108 is
Magnetic polarity S.Because external magnet string 110 and magnet string 108 have identical outer magnetic pole, the outer magnetic pole of external magnet string 110
For magnetic polarity S.Further, because the internal magnetic pole of the internal magnet string 112 of magnet assemblies 106 is different from outer magnetic pole, interior magnetic
Polarity is magnetic polarity N.
As described above, in the negative electrode of cathode array, the alternately polarity of magnet assemblies is reduced in array between negative electrode
Cross-talk, in the case that the cross-talk may betide the similar magnet assemblies of use due to the set of some electrical losses, wherein,
Result be produce array current, this array current along array outer cathode flowing, and in magnetron turn-around portion by one
Negative electrode jumps to another negative electrode.Therefore, by providing uniform target on the whole target length of complete cathode array
Erosion, embodiment described herein lifting target service efficiency.For consumers, using such a alternate magnet array
The service life of negative electrode is added, therefore the cost of institute's sedimentary will be lowered, while can be applied using same target set
The more substrates of cloth, and with higher target service efficiency.
Fig. 4 illustrate to be coated with sputter material layer in the device 10 on substrate neighbouring magnet assemblies 60,74,82,90,
98 and 106 schematic top plan view.The arrangement of magnet assemblies 60,74,82,90,98 and 106 and configuration correspond to is retouched with reference to Fig. 3 B
The embodiment stated.The further feature of device 10 is omitted so as to more preferable general introduction.Fig. 4 is illustrated, parallel magnet assemblies 60,
74th, the magnet assemblies 60 of the left hand avris of 82,90,98 and 106 row, magnet assemblies 60 have external magnet string 64 and 68 and interior
Magnet string 66.External magnet string 64 and 68 has outer magnetic pole N respectively, and internal magnet string 66 has internal magnetic pole S.Component symbol
114 refer to the longitudinal axis for the negative electrode 16 for being assigned magnet assemblies 60.Magnet with external magnet string 76 and 78 and internal magnet string 80
Component 74 is adjacent to magnet assemblies 60 and set.External magnet string 76 and 78 has outer magnetic pole S respectively, and internal magnet string 80 is with interior
Magnetic polarity N.Component symbol 116 refers to the longitudinal axis for the negative electrode 18 for being assigned magnet assemblies 74.Then, with external magnet string 84 and 86
And the magnet assemblies 82 of internal magnet string 88 are adjacent to magnet assemblies 74 and set.External magnet string 84 and 86 has outer magnetic pole respectively
N, and internal magnet string 88 has internal magnetic pole S.Component symbol 118 refers to the longitudinal axis for the negative electrode 20 for being assigned magnet assemblies 82.Connect
, the magnet assemblies 90 with external magnet string 92 and 94 and internal magnet string 96 are adjacent to magnet assemblies 82 and set.External magnet string
92 and 94 have outer magnetic pole S respectively, and internal magnet string 96 has internal magnetic pole N.Component symbol 120 refers to and is assigned group of magnets
The longitudinal axis of the negative electrode 22 of part 90.Magnet assemblies 98 with external magnet string 100 and 102 and internal magnet string 104 are adjacent to magnet
Component 90 is set.External magnet string 100 and 102 has outer magnetic pole N respectively, and internal magnet string 104 has internal magnetic pole S.Element
Symbol 122 refers to the longitudinal axis for the negative electrode 24 for being assigned magnet assemblies 98.Finally, with external magnet string 108 and 110 and internal magnet
The magnet assemblies 106 of string 112 are adjacent to magnet assemblies 98 and set.External magnet string 108 and 110 has outer magnetic pole S respectively, and interior
Magnet string 112 has internal magnetic pole N.Component symbol 124 refers to the longitudinal axis for the negative electrode 26 for being assigned magnet assemblies 106.
Device 10 with magnet assemblies 60,74,82,90,98 and 106 is arranged in process chamber 42.Therefore, plasma
Scope also limited by magnet assemblies 60,74,82,90,98 and 106.Plasma include with positive charge ion and
Electronics with negative electrical charge.The drift of electronics and electronics in plasma to produce more polyion, and the ion should be then
Material granule on target is hit.This represents the erosion of electronic effect target.Especially, the drift of electronics and and then more
The generation of ion should be influenceed by magnet assemblies 60,74,82,90,98 and 106.The path of plasma flow, particularly respective
Magnet assemblies 60,74,82,90,98 and 106 in or surrounding flowing path, and respective target erosion is referred to as plasma
Track body (plasma racetrack).For example, plasma is by respective magnet assemblies 60,74,82,90,98 and 106
Configuration defined.Electronics is exposed to electric field and magnetic field.The power for acting on electronics is so-called Lorentz force (Lorentz
force).Lorentz force is defined by below equation：F (Lorentz)=q* (E+v x B), wherein q are charged particle (electronics)
Electric charge, E be electric field field intensity, v be charged particle speed, B be magnetic field magnetic flux density.
Due to acting on the power of electronics, single electronics is produced for each magnet assemblies 60,74,82,90,98 and 106
Drift current.Single electronics drift sense of current passes through in respective magnet assemblies 60,74,82,90,98 and 106
The polarity of magnet string and the polarity of external magnet string and define, therefore defined by the direction of each self-magnetic field.Especially, individually
Electronics drift current flowed between the internal magnet string and external magnet string of respective magnet assemblies 60,74,82,90,98 and 106
It is dynamic.The example of the electronics drift current is indicated in Fig. 4.Fig. 4 illustrates the electronics drift current related to magnet assemblies 60
126th, the electronics drift current 128 related to magnet assemblies 74, the electronics drift current 130 and magnetic related with magnet assemblies 82
Iron component 90 related electronics drift current 132, the electronics drift current 134 related to magnet assemblies 98 and and magnet assemblies
106 related electronics drift currents 136.The direction that electronics drift current 126 to 136 flows is indicated with arrow in Fig. 4.Can be with
It is noted that individually the direction of electronics drift current 126 to 136 replaces between magnet assemblies.Such case is due to
The magnetic polarity of external magnet string and the magnetic polarity of internal magnet string replace caused between magnet assemblies.Electronics drift current 126,
130 and 134 flow in the counterclockwise direction, and electronics drift current 128,132 and 136 flows along clockwise direction.
The flowing of respective electronics drift current is limited along plasma to be flowed, and the plasma limitation has two
Parallel and linear core (left center part 138 and right core 140) and two turn-around portions (on around transfer part
Divide 142 and lower turn-around portion 144).In respective magnet assemblies 60,74,82,90,98 and 106, left center part 138 is on a left side
Flowed between strip external magnet string and strip internal magnet string, and right core 140 is in right strip external magnet string and length
Flowed between bar shaped internal magnet string.Upper turn-around portion 142 connection left center part 138 and the upper end of right core 140, under around
The connection left center part of transfer part point 144 138 and the lower end of right core 140.
Normally, the plasma density of turn-around portion 142,144 and the plasma density of core 138,140 be not
Together.Such case can cause the local erosion of target different.Uneven phenomenon occurs for the target erosion during sputtering process.Keep away
The measure for exempting from this phenomenon is the magnetic field for weakening turn-around portion 142,144.For example, the measure can be by by current divider (shunts)
Reach applied to the magnet string in turn-around portion 142,144.Current divider is, for example, feeromagnetic metal piece.This can reduce turn-around portion
142nd, 144 target erosion.However, the side effect of the relatively low-intensity magnetic field of turn-around portion 142,144 is weaker local plasma
Limitation, this can cause the electrical losses of peripheral part of the magnet assemblies of negative electrode and negative electrode.Especially, in electronics drift current
Electronics is reentered before core 138,140, and electrical losses are serious in the end of turn-around portion 142,144.
According to some embodiments, two or more negative electrodes with magnet assemblies are arranged close to each other, to cause
Two adjacent negative electrodes interact with each other.These negative electrodes constitute cathode array.However, the adjacency between two negative electrodes can be led
Show lower influence：The adjacent magnet assemblies of neighbouring cathode may collect some electrical losses.The electric float out of the ordinary of magnet assemblies
The electronics for moving electric current flows to adjacent magnet assemblies in the end of turn-around portion from a magnet assemblies.This situation can cause phase
Occurs cross-talk between adjacent magnet assemblies.The position and direction that electronics jumps to adjacent magnet assemblies from a magnet assemblies are special
It is not depending on electronics out of the ordinary drift sense of current.And individually electronics drift sense of current is to regard respective magnet assemblies
Internal magnet string and external magnet string polar configurations depending on.Therefore, according to embodiment described herein, it is to avoid in cathode array
Multiple negative electrodes, most negative electrode or all negative electrodes between occur cross-talk.Because at least two neighbouring negative electrodes
Between magnet assemblies there is alternate magnet to orient.
For some of the embodiments described herein, electronics jumps to adjacent magnet assemblies from a magnet assemblies
Effect Fig. 4 show.According to embodiment described in conjunction with Figure 4, the direction of the electronics drift current 126 of magnet assemblies 60 is
Counterclockwise.Therefore, the electronics from electronics drift current 126 to the electronics drift current 128 of adjacent magnet assemblies 74 is jumped
(i.e. electronic crosstalk) meeting that jumps occurs in the end of the lower turn-around portion 144 of magnet assemblies 60.This cross-talk is indicated by arrow 146.
The direction of the electronics drift current 128 of magnet assemblies 74 is clockwise.Therefore, from electronics drift current 128 to adjacent
The Spectrametry of Electron Exchange of the electronics drift current 126 of magnet assemblies 60 can be sent out in the end of the lower turn-around portion 144 of magnet assemblies 74
It is raw.This cross-talk is indicated by arrow 148.In general, cross-talk 146 and cross-talk 148 are reversely with each other, to compensate electronics drift current
126 and the electrical losses of electronics drift current 128.Further, from electronics drift current 128 to adjacent magnet assemblies
The Spectrametry of Electron Exchange of 82 electronics drift current 130 can occur in the end of the upper turn-around portion 142 of magnet assemblies 74.This cross-talk
Indicated by arrow 150.In next magnet assemblies 82, the direction of electronics drift current 130 is once again for counterclockwise.From electricity
The Spectrametry of Electron Exchange of sub- drift current 130 to the electronics drift current 128 of adjacent magnet assemblies 74 can be in the upper of magnet assemblies 82
The end of turn-around portion 142 occurs.This cross-talk is indicated by arrow 152.Because cross-talk 150 and cross-talk 152 are reversely with each other, so
Near-earth is at least compensated to the electrical losses of electronics drift current 128 and electronics drift current 130.From electronics drift current 130 to
The Spectrametry of Electron Exchange of the electronics drift current 132 of adjacent magnet assemblies 90 can be at the end of the lower turn-around portion 144 of magnet assemblies 82
Occur at end.This cross-talk is indicated by arrow 154.In magnet assemblies 90, the direction of electronics drift current 132 is clockwise once again
Direction.Spectrametry of Electron Exchange from electronics drift current 132 to the electronics drift current 130 of adjacent magnet assemblies 82 can be in group of magnets
The end of the lower turn-around portion 144 of part 90 occurs.This cross-talk is indicated by arrow 156.Due to cross-talk 154 and cross-talk 156 each other
Reversely, so near-earth at least to be compensated to the electrical losses of electronics drift current 130 and electronics drift current 132.Further, from
The Spectrametry of Electron Exchange of electronics drift current 132 to the electronics drift current 134 of adjacent magnet assemblies 98 can be in magnet assemblies 90
The end of upper turn-around portion 142 occurs.This cross-talk is indicated by arrow 158.In magnet assemblies 98, electronics drift current 134
Direction for counterclockwise.From electronics drift current 134 to the electronics of the electronics drift current 132 of adjacent magnet assemblies 90
Jump can occur in the end of the upper turn-around portion 142 of magnet assemblies 98.This cross-talk is indicated by arrow 160.Due to cross-talk 158
It is reversely with each other with cross-talk 160, so near-earth at least to be compensated to the electricity of electronics drift current 132 and electronics drift current 134
Son loss.Spectrametry of Electron Exchange from electronics drift current 134 to the electronics drift current 136 of adjacent magnet assemblies 106 can be in magnetic
The end of the lower turn-around portion 144 of iron component 98 occurs.This cross-talk is indicated by arrow 162.In magnet assemblies 106, electronics
The direction of drift current 136 is clockwise.Drifted about from electronics drift current 136 to the electronics of adjacent magnet assemblies 98 electric
The Spectrametry of Electron Exchange of stream 134 can occur in the end of the lower turn-around portion 144 of magnet assemblies 106.This cross-talk is referred to by arrow 164
Show.Because cross-talk 162 and cross-talk 164 are reversely with each other, so near-earth at least is compensated into electronics drift current 134 and electronics drift electricity
The electrical losses of stream 136.
Paired electrons is at least nearly made according to the alternating that Fig. 4 embodiment clearly illustrates the magnetic polarity between magnet assemblies
The compensation of loss.Such a alternate magnetic polarity make it that the electronics drift sense of current between magnet assemblies is reverse.Such case
Cause the position of electrical losses to be displaced to opposite side from the side of turn-around portion, that is, rotated from lower turn-around portion 144 is supreme
Part 142 and vice versa.
Advantageously, according to the present invention, the cross-talk (i.e. electrical losses) between neighbouring cathode can be avoided.This cross-talk is probably
As produced by array electronic drift current through or around the array of neighbouring negative electrode, the array has similar magnet assemblies.
Array electronic drift current will flow along the outer cathode of cathode array, and in the turn-around portion of magnet assemblies between negative electrode
Jump.Array electronic drift current can be superimposed the independent electronics drift current in negative electrode.Due to array electronic drift current, negative electrode
In array, the plasma density of the turn-around portion of the magnet assemblies of main inner cathode can increase.This can cause local target to rush
The increase of erosion, the particularly target location in the turn-around portion close to magnet assemblies.Therefore, can be with according to advantages of the present invention
Uniform target erosion is reached, particularly the uniform erosion of the target of the inner cathode in the array by multiple neighbouring negative electrodes.
Therefore, it is to avoid the generation of array electronic drift current.
Fig. 5 illustrates to be coated with sputter material layer in the schematic diagram of the other exemplary means 166 on substrate 12.Typically
For, configuration of the figure according to 3B device 10 is corresponded to according to the configuration of Fig. 5 device 166.Fig. 5 illustrate negative electrode 168,170,
172nd, 174,176 and 178 profile, but the further feature of device 166 is omitted so as to more preferable general introduction.Single negative electrode
168~178 configuration corresponds to the configuration of the negative electrode 16 described under Fig. 2 helps.Implement relative to described in conjunction with Figure 3
Example, in the present embodiment according to Fig. 5, the magnetic polarity of external magnet string replaces not between magnet assemblies.In the present embodiment,
The adjacent outer magnetic pole of two neighbouring magnet assemblies is identical, this two neighbouring magnet assemblies and outer magnetic pole and described two neighbours
The magnet assemblies that the adjacent outer magnetic pole of near magnet assemblies is different replace.Therefore, Fig. 5 illustrates cathode array, two of which
N-S-N cathode assemblies, which are close to, provides each other with and is formed a pair of N-S-N negative electrodes, and a S-N-S negative electrode is close to this to N-S-N
Negative electrode and provide.Whereby, it is interrupted along or across the current loop of the plasma electron of whole array.In view of in above
Hold, according to different embodiments described herein, cathode array includes at least two magnet assemblies, wherein at least two group of magnets
One of part outer magnetic pole is different from adjacent outer magnetic pole.Therefore it provides outer (or interior) between two neighbouring negative electrodes
The magnetic polarity of magnetic polarity replaces at least one times.Generally, as illustrated by Fig. 3 B and 4, each negative electrode is relative to neighbouring the moon
Pole can have alternate magnetic polarity.It will be appreciated that multiple combinations of alternate selection can be provided, as long as in two adjacent negative electrodes
Among provide alternating.
Fig. 6 illustrates the diagrammatic cross-section of three neighbouring magnet assemblies 216,218,220, and three magnet assemblies are divided
Single plane formula negative electrode 222 is assigned to for be coated with sputter material layer in the device 224 on substrate 12.Negative electrode 222 connects
It is connected to target 226.Magnet assemblies 216 include the external magnet string 228 and 230 with outer magnetic pole N.In external magnet string 228 and outside
Between magnet string 230, magnet assemblies 216 include the internal magnet string 232 with internal magnetic pole S.Internal magnetic pole S is different from outer magnetic pole
Property N.The external magnet string 234 of magnet assemblies 218 is adjacent to external magnet string 230 and set.External magnet string 234 has outer magnetic pole S, institute
State the outer magnetic pole N that outer magnetic pole S is different from external magnet string 230.The external magnet string 236 of magnet assemblies 218 also has outer magnetic pole
Property S, and magnet assemblies 218 internal magnet string 238 have internal magnetic pole N.The configuration of 3rd magnet assemblies 220 corresponds to the first magnetic
The configuration of iron component 216.Therefore, external magnet string 240 and 242 has outer magnetic pole N, and internal magnet string 244 has internal magnetic pole
S。
Fig. 7 illustrates to be coated with sputter material layer in the schematic diagram of the Exemplary Deposition System 14 on substrate 12.Deposition system
System 14 includes device 10.Device 10 holds the negative electrode 16~26 and anode 28~40 be arrangeding in parallel.Fig. 7 diagram negative electrodes 16~26
The distance between the longitudinal axis 114~124 and adjacent negative electrode 246.Advantageously, the negative electrode is configured to sufficiently close to each other so that
Two adjacent negative electrodes can interact with each other.More preferably, the distance between two adjacent negative electrodes are less than 500mm.It is more excellent
Ground, the distance between two adjacent negative electrodes are between 300mm and 400mm, or even are more preferably between 235mm and 250mm.
Advantageously, according to the present invention, sputter material may be used to reach equably base plate coating.More advantageously, Ke Nengti
For the highly uniform erosion external form of the target to be coated with.This ensures that target has high service efficiency.The service life of target
System compared to prior art increased.Compared to the system of prior art, due to the target using same one or one group
Material can be coated with more base materials, and this can reduce cost.In addition, depositing system need not can safeguarded or preventive maintenance
In the case of run longer time.Therefore, compared to the system of prior art, the normal operation time of the system increases,
This allow that higher system service efficiency.
Especially, it is the PVD (Physical that are coated with the substrate with large area according to the depositing system of the present invention
Vapor Deposition；PVD) extensive deposition system.Typically, depositing system and to be coated with sputter material layer in base
Device on plate is applied to static sedimentation technique, and wherein substrate is static and do not moved.However, it is also possible to which the present invention is applied
In Dynamic deposition technique, wherein substrate is mobile.Also, the present invention is applied to many different types of substrates, for example, substrate
There can be small area.Present invention can apply to rotatable target and planar target and alternating current (Alternating
Current) system and direct current (Direct Current) system.More preferably, the present invention is applied to be coated with sputter material
Layer is in depositing system and device on substrate, and the substrate comprises more than more than two magnet assemblies.More preferably, these magnet
Component is arranged side by side.
According to some of the embodiments described herein, methods described, which is provided, sets substrate to be used for the sputter of static sedimentation technique
Deposition.Typically, especially for large-area substrates processing, such as processing for the large-area substrates being a vertically aligned, in static state
Difference may be present between deposition and Dynamic deposition.(i.e. substrate continuously or in continuous approximation along sedimentary derivation is moved dynamic sputter
Line in processing will be easier because technique can be stabilized before substrate is moved in deposition region, and
Kept when substrate is by sedimentary derivation stable.Nevertheless, Dynamic deposition can have other shortcomings, for example, can produce
Grain.This shortcoming in particular will happens in thin film transistor (TFT) (TFT) backboard deposition.According to embodiment described herein, it is possible to provide one
Static sputter is planted, e.g. for TFT processing, its plasma can be heavy in initial substrate (pristine substrate)
Stabilized before product.Whereby, it should be noted that be in a ratio of different term static sedimentation techniques from Dynamic deposition technique and be not precluded from this
Any substrate movement that field tool usually intellectual is understood.For example, static sedimentation technique can be included：Deposition process
It is substantially permanent during the substrate position of oscillatory type (oscillating) during the static substrate position of period, deposition, deposition
Rocking type during the substrate position of vibration type (dithering) during fixed average substrate position, deposition, deposition
(wobbling) substrate position, multiple negative electrodes (i.e. predetermined cathode sets) is provided in the depositing operation of a chamber, layer deposition
The deposition chambers of period have the atmospheric environment of closing (such as by closing valve unit so that chamber relative to neighbouring chamber
Room and adjacent chamber isolation) substrate position, or more each combine.Therefore, static sedimentation technique can be regarded as having
The depositing operation of static position, the depositing operation with basic static position or the deposition work with part static position substrate
Skill.Whereby, static sedimentation technique described herein can clearly with Dynamic deposition process distinction, without static sedimentation technique
Substrate position during depositing completely without any movement.
According to some embodiments combined with other embodiments described herein, embodiment described herein can be applied
In physical gas-phase deposition (the Physical vapor deposition of display；PVD), i.e., for monitor market
Sputter deposition on large-area substrates.According to some embodiments, large-area substrates or with the respective of multiple large-area substrates
Carrier can have at least 0.67 square metre of size.Typically, this size can be about 0.67 square metre (0.73 meter of 0.92 meter of x-
4.5th generation) to about 8 square metres of sizes, more typically from about 2 to about 9 square metres, or even it is up to 12 square metres.Allusion quotation
Type there is provided the substrate for the structure described in embodiment described herein, device (be, for example, cathode assembly) and method
Or support plate, it is large-area substrates as described herein.For example, the substrate or support plate of large area can be the 4.5th generations, correspondence
Substrate size be about 0.67 square metre (0.73 meter of 0.92 meter of x)；5th generation, corresponding substrate size is about 1.4 squares
Rice (1.1 meters of 1.3 meters of x)；7.5th generation, corresponding substrate size is about 4.29 square metres (1.95 meters of 2.2 meters of x)；8.5th
Generation, corresponding substrate size is about 5.7 square metres (2.2 meters of 2.5 meters of x)；Or even the 10th generation, corresponding substrate size
It is about 8.7 square metres (2.85 meters x3.05 meters).Even more big such as the 11st generation and the 12nd generation and correspondingly can be similarly effected
Substrate area.
In view of the above, describes multiple embodiments, wherein at least one pair of neighbouring negative electrode of cathode array, magnet
Component replaces in terms of polarity between negative electrode, i.e. external magnet and internal magnet form N-S-N polarity arrangements simultaneously in a negative electrode
S-N-S polarity arrangements are formed in neighbouring negative electrode.As shown in fig. 6, alternating that can be similar can be also provided between magnet assemblies,
For example there are more than one magnet assemblies for a negative electrode.
Further, it is possible to provide multiple optional modifications, in addition to each other or mutual mode can be substituted provide described
Modification.According to further embodiment, at least two magnet assemblies are neighbouring magnet assemblies.According to another embodiment, at least two
The section of each of individual magnet assemblies has two outer magnetic poles and an internal magnetic pole, and wherein internal magnetic pole is different from outer
Magnetic polarity.According to further embodiment, device includes at least three magnet assemblies.More preferably, device includes at least five magnet
Component.According to further embodiment, the adjacent outer magnetic pole of at least two neighbouring magnet assemblies in magnet assemblies group
With identical magnetic polarity.It is adjacent according to further embodiment, at least two with the adjacent outer magnetic pole of magnetic polarity identical
Near magnet assemblies replace with least one magnet assemblies, the outer magnetic pole of at least one magnet assemblies and described two neighbours
The adjacent outer magnetic pole of near magnet assemblies is different.According to further embodiment, the outer magnetic pole of magnet assemblies is in magnet
Between component alternately.According to another embodiment, magnet assemblies correspond to one or more negative electrodes.According to further embodiment, each
Negative electrode corresponds to one of magnet assemblies.According to further embodiment, the distance between two neighbouring cathodes cause this two
Neighbouring cathode interacts with each other.More preferably, the distance between two adjacent negative electrodes are less than 500mm.More preferably, two it is adjacent
The distance between negative electrode between 300mm and 400mm.Even more preferably, the distance between two adjacent negative electrodes are in 235mm
Between 250mm.According to another embodiment, negative electrode is plane formula negative electrode.More preferably, device includes a single plane formula the moon
Pole.According to another embodiment of depositing system, device includes the rotatable cathode with the longitudinal axis.These longitudinal axis be arranged in parallel.Root
According to the further embodiment of depositing system, this system is to be coated with sputter material layer on substrate.
Although the above is to be directed to embodiments of the invention, other and further implementations of the present invention can be designed
Example is determined by the claims that follow without departing from base region of the invention, and the scope of the present invention.
Claims (14)
1. it is a kind of to be coated with sputter material layer in the device (10 on substrate (12)；166；224), described device (10；166；
224) include：
At least two magnet assemblies (60,74,82,90,98,106), wherein each magnet assemblies (60,74,82,90,98,106)
With outer magnetic pole (64,68,76,78,84,86,92,94,100,102,108,110) and internal magnetic pole (66,80,88,96,
104、112)；
The outer magnetic pole of one of wherein described at least two magnet assemblies (60,74,82,90,98,106) is different from
The adjacent outer magnetic pole of the other of at least two magnet assemblies (60,74,82,90,98,106),
Wherein described magnet assemblies (60,74,82,90,98,106) correspond to two or more negative electrodes (16,18,20,22,24,
, and the distance between two of which neighbouring cathode (16,18,20,22,24,26) (246) is so that described two adjacent the moon 26)
The distance between the distance that pole (16,18,20,22,24,26) interacts with each other, two of which neighbouring cathode is less than
500mm, and
Wherein described device is configured for static sedimentation.
2. device as claimed in claim 1, wherein at least two magnet assemblies (60,74,82,90,98,106) are adjacent
Near magnet assemblies (60,74,82,90,98,106).
3. device as claimed in claim 1, wherein at least two magnet assemblies (60,74,82,90,98,106)
The section of each has in two outer magnetic poles (64,68,76,78,84,86,92,94,100,102,108,110) and one
Magnetic polarity (66,80,88,96,104,112), wherein the internal magnetic pole is different from the outer magnetic pole.
4. device as claimed in claim 1, wherein described device (10；166；224) include at least three magnet assemblies (60,
74、82、90、98、106)。
5. the phase of at least two neighbouring magnet assemblies in the group of device as claimed in claim 4, wherein magnet assemblies
Adjacent outer magnetic pole has identical magnetic polarity.
6. device as claimed in claim 5, wherein at least two with the adjacent outer magnetic pole of magnetic polarity identical is neighbouring
Magnet assemblies replace with least one magnet assemblies, the outer magnetic pole of at least one magnet assemblies and described at least two
The adjacent outer magnetic pole of neighbouring magnet assemblies is different.
7. device as claimed in claim 1, wherein the magnet assemblies (60,74,82,90,98,106；216、218、220)
The outer magnetic pole in magnet assemblies (60,74,82,90,98,106；216th, 218,220) between alternately.
8. device as claimed in claim 1, wherein the negative electrode (16,18,20,22,24,26) is rotatable cathode.
9. device as claimed in claim 1, wherein each negative electrode (16,18,20,22,24,26；222) magnet is corresponded to
Component (60,74,82,90,98,106；216th, 218, one of 220).
10. the distance between device as claimed in claim 1, two of which neighbouring cathode between 300mm and 400mm it
Between, or between 235mm and 250mm.
11. device as claimed in claim 1, wherein the negative electrode is plane formula negative electrode (222).
12. a kind of depositing system (14), the depositing system includes：Device as any one of claim 1 to 11
(10；166；224)；And to house described device (10；166；224) process chamber (42).
13. depositing system as claimed in claim 12, wherein described device are device (10 as claimed in claim 1；166；
224), and wherein described negative electrode (16,18,20,22,24,26) have be arranged in parallel the longitudinal axis (114,116,118,120,122,
124)。
14. depositing system as claimed in claim 12, wherein the system is to be coated with sputter material layer in substrate (12)
On system (14).
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2012/062836 WO2014005617A1 (en) | 2012-07-02 | 2012-07-02 | Apparatus for coating a layer of sputtered material on a substrate and deposition system |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104704603A CN104704603A (en) | 2015-06-10 |
| CN104704603B true CN104704603B (en) | 2017-07-28 |
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| CN201280075041.6A Active CN104704603B (en) | 2012-07-02 | 2012-07-02 | To be coated with sputter material layer in device and depositing system on substrate |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP2867916A1 (en) |
| JP (1) | JP6113841B2 (en) |
| KR (1) | KR101920840B1 (en) |
| CN (1) | CN104704603B (en) |
| TW (1) | TWI627297B (en) |
| WO (1) | WO2014005617A1 (en) |
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| CN103993273B (en) * | 2014-05-09 | 2016-01-27 | 浙江上方电子装备有限公司 | A kind of sound the admixture plates the film system and utilize it to carry out the method for sound the admixture plates the film |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5096562A (en) * | 1989-11-08 | 1992-03-17 | The Boc Group, Inc. | Rotating cylindrical magnetron structure for large area coating |
| GB9006073D0 (en) * | 1990-03-17 | 1990-05-16 | D G Teer Coating Services Limi | Magnetron sputter ion plating |
| DE4038497C1 (en) * | 1990-12-03 | 1992-02-20 | Leybold Ag, 6450 Hanau, De | |
| KR950000906B1 (en) * | 1991-08-02 | 1995-02-03 | 니찌덴 아넬바 가부시기가이샤 | Sputtering apparatus |
| JPH10509773A (en) * | 1995-04-25 | 1998-09-22 | ザ ビーオーシー グループ インコーポレイテッド | Sputtering apparatus and method for forming a dielectric layer on a substrate |
| WO1998013532A1 (en) * | 1996-09-24 | 1998-04-02 | Deposition Sciences, Inc. | A multiple target arrangement for decreasing the intensity and severity of arcing in dc sputtering |
| GB0503401D0 (en) * | 2005-02-18 | 2005-03-30 | Applied Multilayers Ltd | Apparatus and method for the application of material layer to display devices |
| CN201614406U (en) * | 2008-08-27 | 2010-10-27 | 梯尔涂层有限公司 | Equipment for forming cladding layer of deposition material |
-
2012
- 2012-07-02 WO PCT/EP2012/062836 patent/WO2014005617A1/en active Application Filing
- 2012-07-02 JP JP2015518864A patent/JP6113841B2/en active Active
- 2012-07-02 CN CN201280075041.6A patent/CN104704603B/en active Active
- 2012-07-02 EP EP12730223.0A patent/EP2867916A1/en not_active Withdrawn
- 2012-07-02 KR KR1020157002725A patent/KR101920840B1/en active IP Right Grant
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| Publication number | Publication date |
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| TW201408804A (en) | 2014-03-01 |
| KR20150037963A (en) | 2015-04-08 |
| EP2867916A1 (en) | 2015-05-06 |
| KR101920840B1 (en) | 2018-11-21 |
| WO2014005617A1 (en) | 2014-01-09 |
| JP6113841B2 (en) | 2017-04-12 |
| TWI627297B (en) | 2018-06-21 |
| CN104704603A (en) | 2015-06-10 |
| JP2015522715A (en) | 2015-08-06 |
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