CN104704603A - Apparatus for coating a layer of sputtered material on a substrate and deposition system - Google Patents
Apparatus for coating a layer of sputtered material on a substrate and deposition system Download PDFInfo
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- CN104704603A CN104704603A CN201280075041.6A CN201280075041A CN104704603A CN 104704603 A CN104704603 A CN 104704603A CN 201280075041 A CN201280075041 A CN 201280075041A CN 104704603 A CN104704603 A CN 104704603A
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- magnetic pole
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3402—Gas-filled discharge tubes operating with cathodic sputtering using supplementary magnetic fields
- H01J37/3405—Magnetron sputtering
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- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/35—Sputtering by application of a magnetic field, e.g. magnetron sputtering
- C23C14/352—Sputtering by application of a magnetic field, e.g. magnetron sputtering using more than one target
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/3414—Targets
- H01J37/3417—Arrangements
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/34—Gas-filled discharge tubes operating with cathodic sputtering
- H01J37/3411—Constructional aspects of the reactor
- H01J37/345—Magnet arrangements in particular for cathodic sputtering apparatus
Abstract
An apparatus (10; 166; 224) for coating a layer of sputtered material on a substrate (12) is described. Said apparatus (10; 166; 224) comprises at least two magnet assemblies (60, 74, 82, 90, 98, 106), wherein each magnet assembly (60, 74, 82, 90, 98, 106) has an outer and an inner magnet polarity. The outer magnet polarity of one of the at least two magnet assemblies (60, 74, 82, 90, 98, 106) is different from an adjacent outer magnet polarity of the other one of the at least two magnet assemblies (60, 74, 82, 90, 98, 106). Further, a deposition system (14) is described which comprises such an apparatus (10; 166; 224).
Description
Invention technical field
Embodiments of the invention relate to a kind of in order to be coated with the device of sputter material layer on substrate.Device comprises at least two magnet assemblies, and wherein each magnet assemblies has outer magnetic pole and internal magnetic pole.Especially, embodiments of the invention relate to a kind of depositing system, and described depositing system comprises described device.
Background of invention
Material layer can be coated on substrate via so-called sputtering process (sputtering process).Typically, in described sputtering process, be with the ionic bombardment target (target) in plasma, and the particle on target is hit.Usually, substrate is arranged at the opposite side of target.Negative electrode attracts ion, and negative electrode itself can as target, or when from substrate towards the direction of target, after negative electrode can be arranged at target.By hit target particle deposition on substrate to form sputter material layer.May be close to target arrangement of magnets to limit plasma.Described movement is called magnetic control sputtering plating (magnetron sputtering).The existing electric field of magnetic field meeting superposition produced by these magnet, and the behavior of electronics in plasma is affected according to so-called Lorentz force (Lorentz force).Whereby, particularly at the near surface of target, the plasma density in plasma can be controlled methodically.Described situation also can increase and hit the granule number of target, and therefore improves deposition velocity.
In order to be coated with the device of sputter material layer on substrate and respective depositing system uses for multiple deposition object.The particular demands of the design consideration depositing operation of this kind of Apparatus and system and different.For example, there is different types of target and negative electrode.Adopt plane formula negative electrode time, want the coating material of sputter to be configured to the planar targets of even shape, but; When the target material surface of rotatable cathode is bending, target is configured to the form of stylostome especially.Adopt the magnet assemblies of magnetic control sputtering plating can have the combination of target cathode in the lump.This kind of magnet assemblies comprises outer magnetic pole and internal magnetic pole, outer magnetic pole and internal magnetic pole different from each other and the assembly of ring-type can be formed.For example, this kind of magnet assemblies comprises yoke and several magnet arrangements, and wherein each magnet arrangements has specific magnetic polarity separately in flux of plasma direction.Whereby, the outer magnetic ring of flux of plasma arranges to have different magnetic polarities compared to interior magnetic.
May be used for technique in dynamic line (dynamicin-line process) in order to be coated with the device of sputter material layer on substrate, wherein material is coated on the substrate of movement.This device can also for static sedimentation technique, and wherein substrate is static and does not move.Especially, for the deposition of large area, two or more target or negative electrode are arranged side by side in process chamber, form target array and/or cathode array whereby.
In sputtering process, expect to reach uniform target erosion.Finding at present, using the cathode array with multiple negative electrode to have causing target the erosion external form presenting hot ring in the stub area of target.
Summary
In view of above-mentioned, provide a kind of device according to independent claims 1 and a kind of depositing system described in independent claims 18.Other side of the present invention, advantage and feature are apparent according to dependent claims, description and accompanying drawing.
According to embodiment, provide a kind of in order to be coated with the device of sputter material layer on substrate.Device comprises at least two magnet assemblies, and wherein each magnet assemblies has outer magnetic pole and internal magnetic pole.The outer magnetic pole of the one at least two magnet assemblies is different from the adjacent outer magnetic pole of the another one at least two magnet assemblies.
According to another embodiment, provide a kind of depositing system, described depositing system comprises being coated with the described device of sputter material layer on substrate.This depositing system comprises the process chamber in order to this device accommodating.
According to another embodiment, a kind ofly comprise at least two magnet assemblies in order to be coated with the device of sputter material layer on substrate, wherein each magnet assemblies has external magnet and to arrange and internal magnet is arranged.In said device, the South Pole (south pole) had towards substrate or plasma arranged by the external magnet of the one at least two magnet assemblies.The arctic (north pole) had towards substrate or plasma arranged by the adjacent external magnet of the another one at least two magnet assemblies.According to embodiments of the invention, likely by one or more integrate features of the feature of the device of the present embodiment and other embodiment described herein.
According to another embodiment, a kind ofly comprise at least two magnet assemblies in order to be coated with the device of sputter material layer on substrate, wherein each magnet assemblies has external magnet and to arrange and internal magnet is arranged.In said device, the external magnet of the one at least two magnet assemblies is arranged to have and is generated magnetic polarity towards first of substrate, and the adjacent external magnet configuration of another one at least two magnet assemblies has and generates magnetic polarity towards second of substrate.Whereby, the first generation magnetic polarity and second generates magnetic polarity is different from each other.According to embodiments of the invention, likely by one or more integrate features of the feature of the device of the present embodiment and other embodiment described herein.
According to another embodiment, a kind ofly comprise at least two magnet assemblies in order to be coated with the device of sputter material layer on substrate.Each magnet assemblies has magnet, and described magnet relative to each other has different magnetic polar orientation.Whereby, the external magnet of the one at least two magnet assemblies has different magnetic polar orientation compared with the adjacent external magnet of the another one in described at least two magnet assemblies.According to embodiments of the invention, likely by one or more integrate features of the feature of the device of the present embodiment and other embodiment described herein.According to another embodiment, the angle between the magnetic polar orientation that the different magnetic polar orientation of this term represents adjacent external magnet is greater than 90 °.Especially, the angle between magnetic polar orientation is greater than 150 °, such as, be 180 °.
Accompanying drawing is sketched
Set forth comprehensively and the disclosure that can implement to one of ordinary skill in the art particularly the remaining part of specification is special, comprising most preferred embodiment and comprise quoting accompanying drawing, wherein:
Fig. 1 illustrates according to the exemplary deposition system that is arranged in of embodiment described herein in order to be coated with the schematic diagram of the exemplary device of sputter material layer on substrate.
Fig. 2 illustrates the generalized section being used in the rotatable pipe negative electrode be coated with in the device of sputter material layer on substrate according to embodiment described herein.
Fig. 3 A illustrate according to embodiment described herein for the schematic diagram in order to be coated with the magnet assemblies in the exemplary device of sputter material layer on substrate.
Fig. 3 B illustrates another schematic diagram in order to be coated with the exemplary device of sputter material layer on substrate according to embodiment described herein.
Fig. 4 illustrates the schematic top plan view in order to be coated with the several magnet assemblies in the device of sputter material layer on substrate according to embodiment described herein.
Fig. 5 illustrates according to another of embodiment described herein in order to be coated with the schematic diagram of the exemplary device of sputter material layer on substrate.
Fig. 6 illustrates the generalized section being used in three magnet assemblies be coated with in the device of sputter material layer on substrate according to embodiment described herein, and described three magnet assemblies are dispensed to single plane formula negative electrode.
Fig. 7 illustrates the schematic diagram of another exemplary deposition system according to embodiment described herein, and described depositing system has several negative electrode be arranged in parallel.
Embodiment describes in detail
With detailed reference to various embodiment of the present invention, one or more example of described embodiment is illustrated at Zhu Tuzhong.Following in the description of accompanying drawing, similar elements symbol refers to similar elements.Usually, the difference about each embodiment is only described.Each example provides by explaining the present invention, and and does not mean that as restriction of the present invention.Further, as an embodiment part illustrated by the feature that describes can be used in other embodiment or with other embodiment be combined to produce further embodiment.This description is intended to contain such modification and change.
Fig. 1 illustrates and is arranged in depositing system 14 in order to be coated with the schematic diagram of the device 10 of sputter material layer on substrate 12.Especially, Fig. 1 illustrates the profile of device 10 and depositing system 14.Depositing system 14 is coated with the system of sputter material layer on substrate.Term as used herein " substrate " should comprise non-flexible base plate and flexible base plate, non-flexible base plate is such as wafer (wafer), crystal wafer (being such as sapphire or analog) or sheet glass, and flexible base plate is such as net (web) or paillon foil (foil).
Device 10 comprises six targets and/or negative electrode 16,18,20,22,24 and 26, and described negative electrode is hereinafter referred to as negative electrode 16 ~ 26.Negative electrode 16 ~ 26 is connected to negative voltage.Each negative electrode 16 ~ 26 has the form of open column shape body or tubular body, and can rotate along the longitudinal axis of column or tubular body.Each negative electrode 16 ~ 26 is dispensed to target, and described target is normally provided for the solid body of the material of coated substrates 12 in sputtering process.At this, each target has the form of open column shape body.Further, for each negative electrode 16 ~ 26 distributes magnet assemblies.Each magnet assemblies comprises the magnet arrangements of some, and described magnet arrangements can be a layout) or a string permanent magnet.At least one in magnet string (magnet series) has outer magnetic pole, and at least another one in magnet string has internal magnetic pole.It is interior close to target that magnet assemblies is arranged at open column shape negative electrode, makes magnetic field to penetrate target.The target and the magnet assemblies that are dispensed to negative electrode 16 ~ 26 are not illustrated in Fig. 1, and will describe in more detail by composition graphs 2.
According to embodiment described herein, provide a kind of in order to be coated with the device of sputter material layer on substrate.Device comprises at least two magnet assemblies 60, such as, shown in Fig. 3 A.Each magnet assemblies 60 has outer magnetic pole and internal magnetic pole, the adjacent outer magnetic pole of the another one in described at least two magnet assemblies that the outer magnetic pole of the one wherein at least two magnet assemblies is different from.As shown in Figure 3 B, the external magnet in Fig. 3 A arranges that 364,368 and 365 have different polarity towards substrate and/or plasma, and this situation is indicated in figure 3 a by different structures (oblique angle line is relative to vertical line).External magnet is arranged through side 365 and forms loop, and described loop arranges 366 around internal magnet.For example, the internal magnet layout 366 of the upper magnet assembly 60 in Fig. 3 A can have the arctic of flux of plasma and/or substrate, and 366 South Pole can with flux of plasma and/or substrate arranged by the internal magnet of lower magnet assembly 60 in Fig. 3 A, and 364,365 and 368 South Pole can with flux of plasma and/or substrate arranged by the external magnet of upper magnet assembly 60 in Fig. 3 A, and 364,365 and 368 arctic can with flux of plasma and/or substrate arranged by the external magnet of lower magnet assembly 60 in Fig. 3 A.
For the cathode array without magnet orientation alternately, the transfer of electronics from negative electrode to negative electrode is carried out forever all in the same direction, and this effect is added up from negative electrode to negative electrode always.This situation can cause the cross-talk (crosstalk) between all negative electrodes.As shown in Figure 3A, this phenomenon this by adopting magnetic polarity alternately to avoid at least one pair of contiguous negative electrode.Because magnetic polarity is contrary, in magnetron, the direction of electron drift is reversed.Reverse due to drift bearing, the position of primary electron loss moves to opposite side by the side of turn-around portion (turnaround).Whereby, by providing uniform target erosion on the whole target length of complete cathode array, the service efficiency of target can increase.
Please refer to back Fig. 1, according to some embodiments, anode 28,30,32,34,36,38 and 40 can be adjacent to negative electrode 16 ~ 26 and arrange.Anode 28 ~ 40 can have post type.The longitudinal axis of negative electrode 16 ~ 26 and the longitudinal axis of anode 28 ~ 40 are arranged.In apparatus 10, anode 28 is arranged on the starting end that anode-cathode is arranged, and anode 40 is arranged on end.Anode 30 ~ 38 is arranged between negative electrode 16 ~ 26, makes anode 28 ~ 40 and negative electrode 16 ~ 26 alternately.Therefore, each in negative electrode 16 ~ 26 has two adjacent anodes.Each anode 28 ~ 40 is connected to positive voltage.Should it is clear that for application-specific, the anode in device 10 and the quantity of negative electrode can optionally change and adjust.
Depositing system 14 as shown in Figure 1 comprises the process chamber 42 of accommodating device 10.Process chamber 42 can be the vacuum chamber being configured to be vented by the vacuum flange of vacuum chamber.The plasma with ion and electronics can be adjacent to negative electrode and produce in vacuum chamber.Ion is used for particle to hit from target, and electronics is used for ionixedpiston.Further, depositing system 14 comprises the cavity shield 44 for shielding processing room 42, pre-sputter shielding 46 and shade shielding 48.According to some execution modes, pre-sputter shielding 46 can be connected to anode 28 ~ 40 via resistance 50.Cavity shield 44 can ground connection.Substrate support 52 in order to fixing substrate 12 is provided in depositing system 14.Substrate support 52 is arranged relative to anode 28 ~ 40, and the particle hit from target can be deposited on substrate 12.
Fig. 2 illustrates the generalized section being used in the rotatable cathode 16 be coated with in the device 10 of sputter material layer on substrate.Negative electrode 16 shows as the representative of other negative electrode 18 ~ 26 typically with identical configuration.Negative electrode 16 comprises rear pipe (backing tube) 54, and rear pipe 54 is such as a hollow cylinder with tubular form.Target 56 is connected to the outer surface of rear pipe 54.Target 56 has open column shape form equally.Target 56 and rear pipe 54 can rotate up in the side of arrow 58, that is, rotate in the clockwise direction.But target 56 and rear pipe 54 also can rotate in the counterclockwise direction.
Magnet assemblies 60 is arranged in negative electrode 16.Yoke 62, three magnet 64,66 and 68 that magnet assemblies 60 can comprise circular arc are placed in yoke 62.The magnet arrangements that magnet 64,66 and 68 can be made up of multiple single magnet.These single magnet link together by rights.Advantageously, these single magnet are permanent magnets.Each in magnet arrangements 64 ~ 68 has specific magnetic polarity.Especially, these magnetic polarities make land used respectively towards target, plasma and/or substrate.The feature of magnet arrangements 64 ~ 68 such as can be the magnetic pole of flux of plasma.This magnetic pole can be the South Pole or the arctic.Further, the feature of the magnetic polarity of magnet arrangements 64 ~ 68 can be respectively for the type of the gained magnetic polarity of target, plasma and/or substrate.Magnet arrangements 64 and 68 is called as external magnet and arranges, arranges the ring body formed around internal magnet layout 66 this is because described.Therefore, the magnetic polarity of magnet arrangements 64 and 68 is outer magnetic pole.Magnet arrangements 66 is referred to as internal magnet and arranges, this is because magnet arrangements 66 is arranged at arranging in the interior zone between 68 between external magnet layout 64 and external magnet of magnet assemblies 60.Therefore, the magnetic polarity of magnet string 66 is internal magnetic pole.External magnet arranges that 64 and 68 have identical magnetic polarity respectively, and described magnetic polarity is different from the magnetic polarity of internal magnet string 66.Fig. 2 illustrates the field wire 70 and 72 in the magnetic field set up by magnet string 64 ~ 68.
Fig. 3 B illustrates another schematic diagram being coated with the device 10 of sputter material layer on substrate 12.Fig. 3 B illustrates the profile of negative electrode 16 ~ 26, but the further feature of device 10 is omitted for better general introduction.The configuration of negative electrode 16 ~ 26 corresponds to the configuration of the negative electrode 16 described in Fig. 2.As shown in Figure 3 B, the difference of negative electrode 16 ~ 26 is the specification of respective magnet assemblies.According to the embodiment that composition graphs 3B describes, the magnetic polarity that external magnet is arranged replaces between each magnet assemblies.This situation means that the magnetic polarity of internal magnet string also replaces between magnet assemblies.
In the present embodiment, negative electrode 16 is outer cathodes, is positioned at the left end of the row of negative electrode 16 ~ 26.Negative electrode 16 comprises the magnet assemblies 60 with external magnet string 64 and 68 and internal magnet string 66.External magnet string 64,68 has identical outer magnetic pole, and described outer magnetic pole is magnetic polarity N.The internal magnetic pole of internal magnet string 66 is magnetic polarity S, different from the outer magnetic pole N of magnet assemblies 60.Next negative electrode in the row of negative electrode 16 ~ 26 is negative electrode 18.The adjacent right-hand side being arranged at negative electrode 16 of negative electrode 18.Negative electrode 18 comprises the magnet assemblies 74 with external magnet string 76 and 78 and internal magnet string 80.The external magnet string 68 that external magnet string 76 is adjacent to contiguous magnet assemblies 60 is arranged.Advantageously, the outer magnetic pole of external magnet string 76 is different from the outer magnetic pole of adjacent external magnet string 68.Therefore, the outer magnetic pole of external magnet string 76 is magnetic polarity S.Because external magnet string 78 and external magnet string 76 have identical outer magnetic pole, the outer magnetic pole of external magnet string 78 is also magnetic polarity S.Further, because the internal magnetic pole of the internal magnet string 80 of magnet assemblies 74 is different from outer magnetic pole, internal magnetic pole is magnetic polarity N.Next negative electrode in the row of negative electrode 16 ~ 26 is negative electrode 20.The adjacent right-hand side being arranged at negative electrode 18 of negative electrode 20.Negative electrode 20 comprises the magnet assemblies 82 with external magnet string 84 and 86 and internal magnet string 88.The external magnet string 78 that external magnet string 84 is adjacent to contiguous magnet assemblies 74 is arranged.Advantageously, the outer magnetic pole of external magnet string 84 is different from the outer magnetic pole of adjacent external magnet string 78.Therefore, the outer magnetic pole of external magnet string 84 is magnetic polarity N.Because external magnet string 86 and external magnet string 84 have identical outer magnetic pole, the outer magnetic pole of external magnet string 86 is also magnetic polarity N.Further, because the internal magnetic pole of the internal magnet string 88 of magnet assemblies 82 is different from outer magnetic pole, internal magnetic pole is magnetic polarity S.Next negative electrode in the row of negative electrode 16 ~ 26 is negative electrode 22.The adjacent right-hand side being arranged at negative electrode 20 of negative electrode 22.Negative electrode 22 comprises the magnet assemblies 90 with external magnet string 92 and 94 and internal magnet string 96.The external magnet string 86 that external magnet string 92 is adjacent to contiguous magnet assemblies 82 is arranged.Advantageously, the outer magnetic pole of external magnet string 92 is different from the outer magnetic pole of adjacent external magnet string 86.Therefore, the outer magnetic pole of external magnet string 92 is magnetic polarity S.Because external magnet string 94 and external magnet string 92 have identical outer magnetic pole, the outer magnetic pole of external magnet string 94 is also magnetic polarity S.Further, because the internal magnetic pole of the internal magnet string 96 of magnet assemblies 90 is different from outer magnetic pole, internal magnetic pole is magnetic polarity N.Next negative electrode in the row of negative electrode 16 ~ 26 is negative electrode 24.The adjacent right-hand side being arranged at negative electrode 22 of negative electrode 24.Negative electrode 24 comprises the magnet assemblies 98 with external magnet string 100 and 102 and internal magnet string 104.The external magnet string 94 that external magnet string 100 is adjacent to contiguous magnet assemblies 90 is arranged.Advantageously, the outer magnetic pole of external magnet string 100 is different from the outer magnetic pole of adjacent external magnet string 94.Therefore, the outer magnetic pole of external magnet string 100 is magnetic polarity N.Because external magnet string 102 and external magnet string 100 have identical outer magnetic pole, the outer magnetic pole of external magnet string 102 is also magnetic polarity N.Further, because the internal magnetic pole of the internal magnet string 104 of magnet assemblies 98 is different from outer magnetic pole, internal magnetic pole is magnetic polarity S.The next one in the row of negative electrode 16 ~ 26 and last negative electrode are negative electrodes 26.The adjacent right-hand side being arranged at negative electrode 24 of negative electrode 26.Negative electrode 26 comprises the magnet assemblies 106 with external magnet string 108 and 110 and internal magnet string 112.The external magnet string 102 that external magnet string 108 is adjacent to contiguous magnet assemblies 98 is arranged.Advantageously, the outer magnetic pole of external magnet string 108 is different from the outer magnetic pole of adjacent external magnet string 102.Therefore, the outer magnetic pole of external magnet string 108 is magnetic polarity S.Because external magnet string 110 and magnet string 108 have identical outer magnetic pole, the outer magnetic pole of external magnet string 110 is also magnetic polarity S.Further, because the internal magnetic pole of the internal magnet string 112 of magnet assemblies 106 is different from outer magnetic pole, internal magnetic pole is magnetic polarity N.
As mentioned above, in the negative electrode of cathode array, the alter polarity of magnet assemblies reduces the cross-talk in array between negative electrode, described cross-talk may due to the set of some electrical losses betide use similar magnet assemblies when, wherein, result produces array current, and this array current flows along the outer cathode of array, and jumps to another negative electrode in the turn-around portion of magnetron by a negative electrode.Therefore, by providing uniform target erosion on the whole target length of complete cathode array, embodiment described herein promotes target service efficiency.For consumers, the magnet array using this kind to replace adds the useful life of negative electrode, and therefore the cost of institute's sedimentary deposit will be lowered, and can adopt the same more substrates of target set coating simultaneously, and have higher target service efficiency.
Fig. 4 illustrates the schematic top plan view of the magnet assemblies 60,74,82,90,98 and 106 of the vicinity being coated with the device 10 of sputter material layer on substrate.The layout of magnet assemblies 60,74,82,90,98 and 106 and configuration correspond to the embodiment described by composition graphs 3B.The further feature of device 10 is omitted better to summarize.Fig. 4 illustrates, and in the magnet assemblies 60 of the left hand avris of the row of parallel magnet assemblies 60,74,82,90,98 and 106, magnet assemblies 60 has external magnet string 64 and 68 and internal magnet string 66.External magnet string 64 and 68 has outer magnetic pole N respectively, and internal magnet string 66 has internal magnetic pole S.Component symbol 114 refers to the longitudinal axis of the negative electrode 16 being assigned magnet assemblies 60.The magnet assemblies 74 with external magnet string 76 and 78 and internal magnet string 80 is adjacent to magnet assemblies 60 and arranges.External magnet string 76 and 78 has outer magnetic pole S respectively, and internal magnet string 80 has internal magnetic pole N.Component symbol 116 refers to the longitudinal axis of the negative electrode 18 being assigned magnet assemblies 74.Then, the magnet assemblies 82 with external magnet string 84 and 86 and internal magnet string 88 is adjacent to magnet assemblies 74 and arranges.External magnet string 84 and 86 has outer magnetic pole N respectively, and internal magnet string 88 has internal magnetic pole S.Component symbol 118 refers to the longitudinal axis of the negative electrode 20 being assigned magnet assemblies 82.Then, the magnet assemblies 90 with external magnet string 92 and 94 and internal magnet string 96 is adjacent to magnet assemblies 82 and arranges.External magnet string 92 and 94 has outer magnetic pole S respectively, and internal magnet string 96 has internal magnetic pole N.Component symbol 120 refers to the longitudinal axis of the negative electrode 22 being assigned magnet assemblies 90.The magnet assemblies 98 with external magnet string 100 and 102 and internal magnet string 104 is adjacent to magnet assemblies 90 and arranges.External magnet string 100 and 102 has outer magnetic pole N respectively, and internal magnet string 104 has internal magnetic pole S.Component symbol 122 refers to the longitudinal axis of the negative electrode 24 being assigned magnet assemblies 98.Finally, the magnet assemblies 106 with external magnet string 108 and 110 and internal magnet string 112 is adjacent to magnet assemblies 98 and arranges.External magnet string 108 and 110 has outer magnetic pole S respectively, and internal magnet string 112 has internal magnetic pole N.Component symbol 124 refers to the longitudinal axis of the negative electrode 26 being assigned magnet assemblies 106.
The device 10 with magnet assemblies 60,74,82,90,98 and 106 is arranged in process chamber 42.Therefore, the scope of plasma also limit by magnet assemblies 60,74,82,90,98 and 106.Plasma comprises the ion with positive charge and the electronics with negative electrical charge.The drift of electronics and electronics in order to produce more polyion in plasma, and the material granule on target should then hit by described ion.This represents the erosion of electronic effect target.Especially, electronics drift and and then more polyionic generation should affect by magnet assemblies 60,74,82,90,98 and 106.The path of plasma flow, particularly in respective magnet assemblies 60,74,82,90,98 and 106 or the path of ambient dynamic, and respective target erosion, be called as plasma track (plasma racetrack).For example, plasma defined by the configuration of respective magnet assemblies 60,74,82,90,98 and 106.Electronics is exposed to Electric and magnetic fields.The power acting on electronics is so-called Lorentz force (Lorentz force).Lorentz force defined by following formula: F (Lorentz)=q* (E+v x B), wherein q is the electric charge of charged particle (electronics), and E is the field intensity of electric field, and v is the speed of charged particle, and B is the magnetic flux density in magnetic field.
Owing to acting on the power of electronics, produce independent electron drift electric current for each magnet assemblies 60,74,82,90,98 and 106.Independent electron drift sense of current is defined by the polarity of internal magnet string of respective magnet assemblies 60,74,82,90,98 and 106 and the polarity of external magnet string, is therefore defined by the direction of each self-magnetic field.Especially, independent electron drift electric current flows between the internal magnet string and external magnet string of respective magnet assemblies 60,74,82,90,98 and 106.Indicate the example of described electron drift electric current in the diagram.Fig. 4 illustrates the electron drift electric current 126 relevant to magnet assemblies 60, the electron drift electric current 128 relevant with magnet assemblies 74, the electron drift electric current 130 relevant with magnet assemblies 82, the electron drift electric current 132 relevant with magnet assemblies 90, the electron drift electric current 134 relevant with magnet assemblies 98 and the electron drift electric current 136 relevant with magnet assemblies 106.The direction of electron drift electric current 126 to 136 flowing indicates with arrow in the diagram.It is possible to note that the direction of independent electron drift electric current 126 to 136 replaces between magnet assemblies.This situation is because the magnetic polarity of external magnet string and the magnetic polarity of internal magnet string replace caused between magnet assemblies.Electron drift electric current 126,130 and 134 flows in the counterclockwise direction, and electron drift electric current 128,132 and 136 flows along clockwise direction.
The flowing of respective electron drift electric current is along plasma restriction flowing, and described plasma restriction has two parallel and linear core (LC part 138 and right core 140) and two turn-around portion (upper turn-around portion 142 and lower turn-around portion 144).In respective magnet assemblies 60,74,82,90,98 and 106, LC part 138 flows between left strip external magnet string and strip internal magnet string, and right core 140 flows between right strip external magnet string and strip internal magnet string.Upper turn-around portion 142 connects the upper end of LC part 138 and right core 140, and lower turn-around portion 144 connects the lower end of LC part 138 and right core 140.
Normally, the plasma density of turn-around portion 142,144 is different with the plasma density of core 138,140.This situation can cause the local erosion of target different.The phenomenon that target erosion during sputtering process is uneven.The measure of this phenomenon is avoided to be the magnetic field of weakening turn-around portion 142,144.Such as, described measure is reached by shunt (shunts) is applied to the magnet string in turn-around portion 142,144.Shunt is such as feeromagnetic metal sheet.This can reduce the target erosion of turn-around portion 142,144.But, turn-around portion 142,144 be the restriction of more weak local plasma compared with the side effect of low-intensity magnetic field, this can cause the electrical losses of peripheral part of the magnet assemblies of negative electrode and negative electrode.Especially, before the electronics of electron drift electric current reenters core 138,140, electrical losses is serious in the end of turn-around portion 142,144.
According to some embodiments, two or more negative electrodes with magnet assemblies are arranged close to each other, and interact with each other to make two adjacent negative electrodes.These negative electrodes form cathode array.But the adjacency between two negative electrodes can cause following impact: the adjacent magnet assemblies of neighbouring cathode may collect some electrical losses.The electronics of the electron drift electric current out of the ordinary of magnet assemblies flows to adjacent magnet assemblies in the end of turn-around portion from a magnet assemblies.This situation can cause between adjacent magnet assemblies and cross-talk occurs.Electronics jumps to the position of adjacent magnet assemblies and direction particularly depending on electron drift sense of current out of the ordinary from a magnet assemblies.And independent electron drift sense of current is the polar configurations of internal magnet string depending on respective magnet assemblies and external magnet string.Therefore, according to embodiment described herein, avoid, between the multiple negative electrodes in cathode array, most negative electrode or all negative electrodes, cross-talk occurs.This is because it is directed to have magnet alternately between the magnet assemblies of the negative electrode of at least two vicinities.
For embodiments more described herein, the effect that electronics jumps to adjacent magnet assemblies from a magnet assemblies is shown at Fig. 4.According to embodiment described in conjunction with Figure 4, the direction of the electron drift electric current 126 of magnet assemblies 60 is counterclockwise.Therefore, can occur in the end of the lower turn-around portion 144 of magnet assemblies 60 from electron drift electric current 126 to the Spectrametry of Electron Exchange (i.e. electronic crosstalk) of the electron drift electric current 128 of adjacent magnet assemblies 74.This cross-talk is indicated by arrow 146.The direction of the electron drift electric current 128 of magnet assemblies 74 is clockwise direction.Therefore, can occur in the end of the lower turn-around portion 144 of magnet assemblies 74 from electron drift electric current 128 to the Spectrametry of Electron Exchange of the electron drift electric current 126 of adjacent magnet assemblies 60.This cross-talk is indicated by arrow 148.In general, cross-talk 146 and cross-talk 148 are reverse each other, so that the described electrical losses of compensate for electronic drift current 126 and electron drift electric current 128.Further, can occur in the end of the upper turn-around portion 142 of magnet assemblies 74 from electron drift electric current 128 to the Spectrametry of Electron Exchange of the electron drift electric current 130 of adjacent magnet assemblies 82.This cross-talk is indicated by arrow 150.In next magnet assemblies 82, the direction of electron drift electric current 130 is counterclockwise once again.Can occur in the end of the upper turn-around portion 142 of magnet assemblies 82 from electron drift electric current 130 to the Spectrametry of Electron Exchange of the electron drift electric current 128 of adjacent magnet assemblies 74.This cross-talk is indicated by arrow 152.Because cross-talk 150 and cross-talk 152 are reverse each other, so at least by the electrical losses of near-earth compensate for electronic drift current 128 and electron drift electric current 130.Can occur in the end of the lower turn-around portion 144 of magnet assemblies 82 from electron drift electric current 130 to the Spectrametry of Electron Exchange of the electron drift electric current 132 of adjacent magnet assemblies 90.This cross-talk is indicated by arrow 154.In magnet assemblies 90, the direction of electron drift electric current 132 is clockwise direction once again.Can occur in the end of the lower turn-around portion 144 of magnet assemblies 90 from electron drift electric current 132 to the Spectrametry of Electron Exchange of the electron drift electric current 130 of adjacent magnet assemblies 82.This cross-talk is indicated by arrow 156.Because cross-talk 154 and cross-talk 156 are reverse each other, so at least by the electrical losses of near-earth compensate for electronic drift current 130 and electron drift electric current 132.Further, can occur in the end of the upper turn-around portion 142 of magnet assemblies 90 from electron drift electric current 132 to the Spectrametry of Electron Exchange of the electron drift electric current 134 of adjacent magnet assemblies 98.This cross-talk is indicated by arrow 158.In magnet assemblies 98, the direction of electron drift electric current 134 is counterclockwise.Can occur in the end of the upper turn-around portion 142 of magnet assemblies 98 from electron drift electric current 134 to the Spectrametry of Electron Exchange of the electron drift electric current 132 of adjacent magnet assemblies 90.This cross-talk is indicated by arrow 160.Because cross-talk 158 and cross-talk 160 are reverse each other, so at least by the described electrical losses of near-earth compensate for electronic drift current 132 and electron drift electric current 134.Can occur in the end of the lower turn-around portion 144 of magnet assemblies 98 from electron drift electric current 134 to the Spectrametry of Electron Exchange of the electron drift electric current 136 of adjacent magnet assemblies 106.This cross-talk is indicated by arrow 162.In magnet assemblies 106, the direction of electron drift electric current 136 is clockwise direction.Can occur in the end of the lower turn-around portion 144 of magnet assemblies 106 from electron drift electric current 136 to the Spectrametry of Electron Exchange of the electron drift electric current 134 of adjacent magnet assemblies 98.This cross-talk is indicated by arrow 164.Because cross-talk 162 and cross-talk 164 are reverse each other, so at least by the described electrical losses of near-earth compensate for electronic drift current 134 and electron drift electric current 136.
The compensation alternately caused electrical losses of the magnetic polarity between magnet assemblies is clearly illustrated at least nearly according to the embodiment of Fig. 4.The magnetic polarity that this kind replaces makes the electron drift sense of current between magnet assemblies reverse.This situation causes the position of electrical losses to be displaced to opposite side from the side of turn-around portion, namely from the supreme turn-around portion 142 of lower turn-around portion 144 and vice versa.
Advantageously, according to the present invention, the cross-talk (i.e. electrical losses) between neighbouring cathode can be avoided.This cross-talk may be by array electronic drift current through or array around contiguous negative electrode produced, described array has similar magnet assemblies.Outer cathode along cathode array flows by array electronic drift current, and jumps between negative electrode in the turn-around portion of magnet assemblies.Array electronic drift current can superpose the independent electron drift electric current in negative electrode.Due to array electronic drift current, in cathode array, the plasma density of the turn-around portion of the magnet assemblies of main inner cathode can increase.This can cause the increase of local target erosion, particularly at the target location of the turn-around portion close to magnet assemblies.Therefore, according to advantage of the present invention, uniform target erosion can be reached, the even erosion of the target of the inner cathode particularly in the array of the negative electrode by multiple vicinity.Therefore, the generation of array electronic drift current is avoided.
Fig. 5 illustrates the schematic diagram being coated with the other exemplary means 166 of sputter material layer on substrate 12.In general, figure is corresponded to according to the configuration of the device 10 of 3B according to the configuration of the device 166 of Fig. 5.Fig. 5 illustrates the profile of negative electrode 168,170,172,174,176 and 178, but the further feature of device 166 is omitted better to summarize.The configuration of single negative electrode 168 ~ 178 corresponds to the configuration of the negative electrode 16 described under Fig. 2 helps.Relative to embodiment described in conjunction with Figure 3, according in the present embodiment of Fig. 5, the magnetic polarity of external magnet string not between magnet assemblies alternately.In the present embodiment, the adjacent outer magnetic pole of the magnet assemblies of two vicinities is identical, and the different magnet assemblies of the described adjacent outer magnetic pole of the magnet assemblies of the magnet assemblies of these two vicinities and outer magnetic pole and described two vicinities alternately.Therefore, Fig. 5 illustrates cathode array, and wherein two N-S-N cathode assemblies are close to and provide each other and form a pair N-S-N negative electrode, and a S-N-S negative electrode is close to this provides N-S-N negative electrode.Whereby, along or the current circuit of the plasma electron that strides across whole array be interrupted.In view of above content, according to different embodiment described herein, cathode array comprises at least two magnet assemblies, and the one outer magnetic pole wherein at least two magnet assemblies is different from adjacent outer magnetic pole.Therefore, replacing at least one times of the magnetic polarity of outer (or interior) magnetic polarity between the negative electrode of two vicinities is provided.Usually, illustrated by about Fig. 3 B and 4, each negative electrode can have magnetic polarity alternately relative to contiguous negative electrode.Will be understood that, multiple combinations of alternate selection can be provided, as long as provide alternately among two adjacent negative electrodes.
Fig. 6 illustrates the generalized section of the magnet assemblies 216,218,220 of three vicinities, and described three magnet assemblies back of the body is dispensed to single plane formula negative electrode 222 in order to be coated with in the device 224 of sputter material layer on substrate 12.Negative electrode 222 is connected to target 226.Magnet assemblies 216 comprises the external magnet string 228 and 230 with outer magnetic pole N.Between external magnet string 228 and external magnet string 230, magnet assemblies 216 comprises the internal magnet string 232 with internal magnetic pole S.Internal magnetic pole S is different from outer magnetic pole N.The external magnet string 234 of magnet assemblies 218 is adjacent to external magnet string 230 and arranges.External magnet string 234 has outer magnetic pole S, and described outer magnetic pole S is different from the outer magnetic pole N of external magnet string 230.The external magnet string 236 of magnet assemblies 218 also has outer magnetic pole S, and the internal magnet string 238 of magnet assemblies 218 has internal magnetic pole N.The configuration of the 3rd magnet assemblies 220 corresponds to the configuration of the first magnet assemblies 216.Therefore, external magnet string 240 and 242 has outer magnetic pole N, and internal magnet string 244 has internal magnetic pole S.
Fig. 7 illustrates the schematic diagram being coated with the Exemplary Deposition System 14 of sputter material layer on substrate 12.Depositing system 14 comprises device 10.The negative electrode 16 ~ 26 that device 10 fixing be arranged in parallel and anode 28 ~ 40.Fig. 7 illustrates the distance 246 between the longitudinal axis 114 ~ 124 of negative electrode 16 ~ 26 and adjacent negative electrode.Advantageously, described negative electrode arrange enough near each other, two adjacent negative electrodes can be interacted with each other.More preferably, the distance between two adjacent negative electrodes is less than 500mm.More preferably, the distance between two adjacent negative electrodes, between 300mm and 400mm, is even more preferably between 235mm and 250mm.
Advantageously, according to the present invention, sputter material may be used to reach base plate coating equably.More advantageously, the very uniform erosion external form of the target in order to coating may be provided.This guarantees that target has high service efficiency.The useful life of target increases to some extent compared to the system of prior art.Compared to the system of prior art, owing to using the target of same or a group can be coated with more base material, this can reduce costs.In addition, depositing system can run the longer time when not needing maintenance or preventive maintenance.Therefore, compared to the system of prior art, the normal operation time of native system increases, and this allow that higher system service efficiency.
Especially, depositing system according to the present invention is PVD (the Physical Vapor Deposition in order to coating with large-area substrate; PVD) extensive deposition system.Typically, depositing system and be applicable to static sedimentation technique in order to be coated with the device of sputter material layer on substrate, wherein substrate is static and does not move.But also may apply the present invention to Dynamic deposition technique, wherein substrate is mobile.Further, the present invention is applicable to many dissimilar substrates, and such as, substrate can have small size.The present invention can be applicable to rotatable target and planar target and alternating current (Alternating Current) system and direct current (Direct Current) system.More preferably, the present invention is applicable to be coated with the depositing system of sputter material layer on substrate and device, and described substrate comprises and exceedes plural magnet assemblies.More preferably, these magnet assemblies are arranged side by side.
According to embodiments more described herein, described method provides and arranges the sputter-deposited of substrate for static sedimentation technique.Typically, particularly for large-area substrates process, such as, be the process of the large-area substrates of vertical orientation, can be distinct between static sedimentation and Dynamic deposition.Dynamic sputter (namely substrate continuously or in continuous approximation in the line of sedimentary derivation movement process will be easier, this is because technique can before substrate moves in deposition region stabilisation, and at substrate by keeping stable during sedimentary derivation.However, Dynamic deposition can have other shortcoming, such as, can produce particle.This shortcoming can occur in thin-film transistor (TFT) backboard deposition especially.According to embodiment described herein, can provide a kind of static sputter, such as, be for TFT process, wherein plasma can initial substrate (pristine substrate) deposition before stabilisation.Whereby, it should be noted that being in a ratio of different term static sedimentation technique does not get rid of this area and have from Dynamic deposition technique and usually know that any substrate that the knowledgeable understands moves.For example, static sedimentation technique can comprise: the substrate position of the static state during deposition process, the substrate position of the oscillatory type (oscillating) between depositional stage, average substrate position constant in fact between depositional stage, the substrate position of the vibration type (dithering) between depositional stage, the substrate position of the rocking type (wobbling) between depositional stage, multiple negative electrode (namely predetermined cathode sets) is provided in the depositing operation of a chamber, between layer depositional stage deposition chambers there is relative to contiguous chamber the substrate position of closed atmospheric environment (such as by valve-off unit to make chamber and adjacent chamber isolation), or more the combination of each.Therefore, static sedimentation technique can be regarded as the depositing operation with static position, the depositing operation with basic static position or has the depositing operation of part static position substrate.Whereby, static sedimentation technique described herein clearly and Dynamic deposition process distinction, and can not need the substrate position of static sedimentation technique between depositional stage completely without any movement.
According to some embodiments combined with other embodiment described herein, embodiment described herein can be applicable to physical gas-phase deposition (the Physical vapor deposition of display; PVD), the sputter-deposited namely on the large-area substrates of monitor market.According to some embodiments, large-area substrates or the respective carrier with multiple large-area substrates can have the size of at least 0.67 square metre.Typically, this size can be the size in about 0.67 square metre (0.73 meter of x 0.92 meter – the 4.5th generation) to about 8 square metres, is more typically about 2 to about 9 square metres, or or even up to 12 square metres.Typically, being provided for substrate or the support plate of the structure described in embodiment described herein, device (being such as cathode assembly) and method, is large-area substrates as described herein.For example, large-area substrate or support plate can be the 4.5th generations, corresponding substrate size be about 0.67 square metre (0.73 meter x 0.92 meter); 5th generation, corresponding substrate size be about 1.4 square metres (1.1 meters x 1.3 meters); 7.5th generation, corresponding substrate size be about 4.29 square metres (1.95 meters x 2.2 meters); 8.5th generation, corresponding substrate size be about 5.7 square metres (2.2 meters x 2.5 meters); Or in even the 10th generation, corresponding substrate size is about 8.7 square metres (2.85 meters of x3.05 rice).The substrate area of even larger such as the 11st generation and the 12nd generation and correspondence can be implemented similarly.
In view of foregoing, describe multiple embodiment, wherein at least one pair of contiguous negative electrode of cathode array, magnet assemblies replaces in polarity between negative electrode, that is, external magnet and internal magnet form N-S-N polarity arrangement and form S-N-S polarity arrangement in contiguous negative electrodes in a negative electrode.As shown in Figure 6, also can provide between magnet assemblies can be similar alternately, such as there is for a negative electrode situation of more than one magnet assemblies.
Further, multiple amendment optionally can be provided, can except each other or the mode each other of substituting described amendment is provided.According to other embodiment, at least two magnet assemblies are contiguous magnet assemblies.According to another embodiment, the section of each at least two magnet assemblies has two outer magnetic poles and an internal magnetic pole, and wherein internal magnetic pole is different from outer magnetic pole.According to other embodiment, device comprises at least three magnet assemblies.More preferably, device comprises at least five magnet assemblies.According to other embodiment, the adjacent outer magnetic pole of the magnet assemblies of at least two vicinities in magnet assemblies group has identical magnetic polarity.According to other embodiment, magnet assemblies and at least one magnet assemblies with at least two vicinities of the identical adjacent outer magnetic pole of magnetic polarity replace, and the outer magnetic pole of at least one magnet assemblies described is different from the described adjacent outer magnetic pole of the magnet assemblies of described two vicinities.According to other embodiment, the outer magnetic pole of magnet assemblies replaces between magnet assemblies.According to another embodiment, magnet assemblies corresponds to one or more negative electrode.According to other embodiment, each negative electrode corresponds to the one in magnet assemblies.According to other embodiment, the distance between two neighbouring cathode makes these two neighbouring cathode interact with each other.More preferably, the distance between two adjacent negative electrodes is less than 500mm.More preferably, the distance between two adjacent negative electrodes is between 300mm and 400mm.Even more preferably, the distance between two adjacent negative electrodes is between 235mm and 250mm.According to another embodiment, negative electrode is plane formula negative electrode.More preferably, device comprises a single plane formula negative electrode.According to another embodiment of depositing system, device comprises the rotatable cathode with the longitudinal axis.These longitudinal axis are arranged.According to the other embodiment of depositing system, this system is in order to be coated with sputter material layer on substrate.
Although foregoing is for embodiments of the invention, other and further embodiment of the present invention can be designed and do not deviate from base region of the present invention, and scope of the present invention is determined by following claims.
Claims (15)
1. one kind in order to be coated with the device (10 of sputter material layer on substrate (12); 166; 224), described device (10; 166; 224) comprising:
At least two magnet assemblies (60,74,82,90,98,106), wherein each magnet assemblies (60,74,82,90,98,106) has outer magnetic pole (64,68,76,78,84,86,92,94,100,102,108,110) and internal magnetic pole (66,80,88,96,104,112);
The adjacent outer magnetic pole of the another one at least two magnet assemblies (60,74,82,90,98,106) described in the described outer magnetic pole of the one in wherein said at least two magnet assemblies (60,74,82,90,98,106) is different from.
2. device as claimed in claim 1, wherein said at least two magnet assemblies (60,74,82,90,98,106) are contiguous magnet assemblies (60,74,82,90,98,106).
3. the device any one of claim 1 to 2 as described in item, the section of each in wherein said at least two magnet assemblies (60,74,82,90,98,106) has two outer magnetic poles (64,68,76,78,84,86,92,94,100,102,108,110) and an internal magnetic pole (66,80,88,96,104,112), and wherein said internal magnetic pole is different from described outer magnetic pole.
4. device as claimed any one in claims 1 to 3, wherein said device (10; 166; 224) at least three, more preferably at least five magnet assemblies (60,74,82,90,98,106) are comprised.
5. device as claimed in claim 4, the adjacent outer magnetic pole of the magnet assemblies of at least two vicinities in the group of wherein magnet assemblies has identical magnetic polarity.
6. the device as described in claim 5, magnet assemblies and at least one magnet assemblies wherein with at least two vicinities of the identical adjacent outer magnetic pole of magnetic polarity replace, and the outer magnetic pole of at least one magnet assemblies described is different from the described adjacent outer magnetic pole of the magnet assemblies of described at least two vicinities.
7. the device according to any one of Claims 1-4, wherein said magnet assemblies (60,74,82,90,98,106; 216,218,220) described outer magnetic pole is in magnet assemblies (60,74,82,90,98,106; 216,218,220) between alternately.
8. the device according to any one of claim 1 to 7, wherein said magnet assemblies (60,74,82,90,98,106; 216,218,220) corresponding to one or more negative electrode (16,18,20,22,24,26; 222).
9. device as claimed in claim 8, wherein said negative electrode (16,18,20,22,24,26) is rotatable cathode.
10. the device according to any one of claim 8 to 9, wherein each negative electrode (16,18,20,22,24,26; 222) corresponding to described magnet assemblies (60,74,82,90,98,106; 216,218,220) one.
11. devices according to any one of claim 8 to 10, distance (246) wherein between two neighbouring cathode (16,18,20,22,24,26) is the distance that described two neighbouring cathode (16,18,20,22,24,26) are interacted with each other, described distance more preferably between two neighbouring cathode is less than 500mm, more preferably between 300mm and 400mm, even more preferably between 235mm and 250mm.
12. devices as claimed in claim 8, wherein said negative electrode is plane formula negative electrode (222), and more preferably described device (224) comprises a single plane formula negative electrode.
13. 1 kinds of depositing systems (14), described depositing system comprises: the device (10 according to any one of claim 1 to 12; 166; 224); And in order to accommodating described device (10; 166; 224) process chamber (42).
14. depositing systems as claimed in claim 13, wherein said device is the device (10 such as according to any one of claim 8 to 11; 166; , and wherein said negative electrode (16,18,20,22,24,26) has the longitudinal axis (114,116,118,120,122,124) be set parallel to each other 224).
15. depositing systems according to any one of claim 13 to 14, wherein said system is coated with the system (14) of sputter material layer on substrate (12).
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/EP2012/062836 WO2014005617A1 (en) | 2012-07-02 | 2012-07-02 | Apparatus for coating a layer of sputtered material on a substrate and deposition system |
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| CN104704603A true CN104704603A (en) | 2015-06-10 |
| CN104704603B CN104704603B (en) | 2017-07-28 |
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| Country | Link |
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| EP (1) | EP2867916A1 (en) |
| JP (1) | JP6113841B2 (en) |
| KR (1) | KR101920840B1 (en) |
| CN (1) | CN104704603B (en) |
| TW (1) | TWI627297B (en) |
| WO (1) | WO2014005617A1 (en) |
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| CN103993273B (en) * | 2014-05-09 | 2016-01-27 | 浙江上方电子装备有限公司 | A kind of sound the admixture plates the film system and utilize it to carry out the method for sound the admixture plates the film |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5096562A (en) * | 1989-11-08 | 1992-03-17 | The Boc Group, Inc. | Rotating cylindrical magnetron structure for large area coating |
| US5196105A (en) * | 1990-12-03 | 1993-03-23 | Leybold Aktiengesellschaft | System for coating substrates with magnetron cathodes |
| WO1998013532A1 (en) * | 1996-09-24 | 1998-04-02 | Deposition Sciences, Inc. | A multiple target arrangement for decreasing the intensity and severity of arcing in dc sputtering |
| CN201614406U (en) * | 2008-08-27 | 2010-10-27 | 梯尔涂层有限公司 | Equipment for forming cladding layer of deposition material |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB9006073D0 (en) * | 1990-03-17 | 1990-05-16 | D G Teer Coating Services Limi | Magnetron sputter ion plating |
| KR950000906B1 (en) * | 1991-08-02 | 1995-02-03 | 니찌덴 아넬바 가부시기가이샤 | Sputtering apparatus |
| JPH10509773A (en) * | 1995-04-25 | 1998-09-22 | ザ ビーオーシー グループ インコーポレイテッド | Sputtering apparatus and method for forming a dielectric layer on a substrate |
| GB0503401D0 (en) * | 2005-02-18 | 2005-03-30 | Applied Multilayers Ltd | Apparatus and method for the application of material layer to display devices |
-
2012
- 2012-07-02 JP JP2015518864A patent/JP6113841B2/en active Active
- 2012-07-02 EP EP12730223.0A patent/EP2867916A1/en not_active Withdrawn
- 2012-07-02 WO PCT/EP2012/062836 patent/WO2014005617A1/en active Application Filing
- 2012-07-02 CN CN201280075041.6A patent/CN104704603B/en active Active
- 2012-07-02 KR KR1020157002725A patent/KR101920840B1/en active IP Right Grant
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- 2013-06-27 TW TW102123028A patent/TWI627297B/en active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5096562A (en) * | 1989-11-08 | 1992-03-17 | The Boc Group, Inc. | Rotating cylindrical magnetron structure for large area coating |
| US5196105A (en) * | 1990-12-03 | 1993-03-23 | Leybold Aktiengesellschaft | System for coating substrates with magnetron cathodes |
| WO1998013532A1 (en) * | 1996-09-24 | 1998-04-02 | Deposition Sciences, Inc. | A multiple target arrangement for decreasing the intensity and severity of arcing in dc sputtering |
| CN201614406U (en) * | 2008-08-27 | 2010-10-27 | 梯尔涂层有限公司 | Equipment for forming cladding layer of deposition material |
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| WO2014005617A1 (en) | 2014-01-09 |
| KR101920840B1 (en) | 2018-11-21 |
| TW201408804A (en) | 2014-03-01 |
| JP6113841B2 (en) | 2017-04-12 |
| JP2015522715A (en) | 2015-08-06 |
| TWI627297B (en) | 2018-06-21 |
| EP2867916A1 (en) | 2015-05-06 |
| CN104704603B (en) | 2017-07-28 |
| KR20150037963A (en) | 2015-04-08 |
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