CN104701458B - A kind of organic luminescent device and preparation method thereof, display device - Google Patents
A kind of organic luminescent device and preparation method thereof, display device Download PDFInfo
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
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- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/12—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers comprising dopants
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K50/00—Organic light-emitting devices
- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
- H10K50/125—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light
- H10K50/13—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers specially adapted for multicolour light emission, e.g. for emitting white light comprising stacked EL layers within one EL unit
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- H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
- H10K50/14—Carrier transporting layers
- H10K50/15—Hole transporting layers
- H10K50/156—Hole transporting layers comprising a multilayered structure
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- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/164—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using vacuum deposition
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Abstract
The present invention provides a kind of organic luminescent devices, it include: first electrode, second electrode and organic function layer, the organic function layer includes the first doped layer prepared by the first processing procedure, the second doped layer prepared by the second processing procedure, and it is formed in the auxiliary layer between first doped layer and second doped layer, the auxiliary layer is used to improve the performance of first doped layer.The present invention also provides the production methods of above-mentioned organic luminescent device.The present invention also provides a kind of display devices including above-mentioned organic luminescent device.The present invention is able to solve the problem of bad heterogeneous interface, and then improves OLED service life, drop low operating voltage and raising efficiency.
Description
Technical field
The present invention relates to technical field of semiconductor preparation more particularly to a kind of organic luminescent device and preparation method thereof, show
Showing device.
Background technique
Existing solution process (Solution process) can be excellent with processability green light and red device, still
The blue-light device of preparation is in efficiency or still there is a big difference with the blue-light device of VTE preparation on the service life.Therefore, it is utilizing
It is aobvious that Solution process prepares all colour organic luminous diode (Organic Light-Emitting Diode, OLED)
When showing device, the common layer of blue light is prepared usually using open mask plate (Open Mask), the functional layer is in red, green sub-pixel conduct
Electron transfer layer is without shining, in blue subpixels as blue light-emitting layer.
Since the interface two sides of usual blue light-emitting and Solution process luminescent layer are doped layer, and first
The processing procedure mode difference of doped layer and the second doped layer is easy the problems such as causing efficiency decline.It is existing with the common layer of blue light
OLED does not effectively improve this interface, necessarily affects the performance of OLED.
Summary of the invention
In view of the drawbacks of the prior art, the present invention provides a kind of organic luminescent device and preparation method thereof, display device,
The problem of being able to solve bad heterogeneous interface, and then improve OLED service life, drop low operating voltage and raising efficiency.
In a first aspect, the present invention provides a kind of organic luminescent devices, comprising: first electrode, second electrode and organic
Functional layer:
The organic function layer includes the first doped layer prepared by the first processing procedure, second prepared by the second processing procedure
Doped layer, and the auxiliary layer being formed between first doped layer and second doped layer.
Preferably, the material of the auxiliary layer is identical as the material of main part of second doped layer, and the auxiliary layer is used for
Improve the performance of first doped layer.
Preferably, which is characterized in that the electron mobility of the auxiliary layer is greater than 1 × 10-4m2/V.s。
Preferably, which is characterized in that the auxiliary layer with a thickness of 1nm to 5nm.
Preferably, the auxiliary layer is prepared by the second processing procedure.
Preferably, first doped layer includes organic luminous layer, and second doped layer includes the common layer of blue light.
Preferably, first processing procedure is spin-coating method, knife coating, EFI rubbing method, slit coating method, strip coating
Any one in method, dipping formula rubbing method, drum-type rubbing method, ink jet printing method, nozzle printing method and gelatine-pad printing.
Preferably, second processing procedure is vacuum thermal evaporation, organic vapor phase deposition, laser induced thermal imaging and radiation-actuate
Any one in sublimation transfer.
Preferably, the organic function layer further include: hole injection layer, hole transmission layer, electron transfer layer and electronics note
Enter layer.
Second aspect, this law people provide a kind of production method of organic luminescent device, which comprises on substrate
Sequentially form first electrode, organic function layer and second electrode:
Forming the organic function layer includes: to prepare the first doped layer by the first processing procedure, on first doped layer
Auxiliary layer is formed, the second doped layer is prepared by the second processing procedure on the auxiliary layer.
Preferably, the material of the auxiliary layer is identical as the material of main part of second doped layer, and the auxiliary layer is used for
Improve the performance of first doped layer.
Preferably, the electron mobility of the auxiliary layer is greater than 1 × 10-4m2/V.s。
Preferably, the auxiliary layer with a thickness of 1nm to 5nm.
Preferably, forming the auxiliary layer includes: to prepare the auxiliary layer by the second processing procedure.
Preferably, first doped layer includes organic luminous layer, and second doped layer includes blu-ray layer.
Preferably, first processing procedure is spin-coating method, knife coating, EFI rubbing method, slit coating method, strip coating
Any one in method, dipping formula rubbing method, drum-type rubbing method, ink jet printing method, nozzle printing method and gelatine-pad printing.
Preferably, second processing procedure is vacuum thermal evaporation, organic vapor phase deposition, laser induced thermal imaging and radiation-actuate
Any one in sublimation transfer.
Preferably, the organic function layer is formed further include: hole injection layer is formed on the first electrode, described
Hole transmission layer is formed on hole injection layer, electron transfer layer is formed on second doped layer, in the electron transfer layer
Upper formation electron injecting layer.
The third aspect, the present invention provides a kind of display devices, including above-mentioned organic luminescent device.
As shown from the above technical solution, the present invention provides a kind of organic luminescent device and preparation method thereof, display device, leads to
One layer of auxiliary layer of preparation between the first doped layer and the second doped layer is crossed to be able to solve to improve the performance of the first doped layer
The problem of bad heterogeneous interface, and then improve OLED service life, drop low operating voltage and raising efficiency.
Detailed description of the invention
In order to more clearly explain the embodiment of the invention or the technical proposal in the existing technology, to embodiment or will show below
There is attached drawing needed in technical description to be briefly described, it should be apparent that, the accompanying drawings in the following description is only this
Some embodiments of invention for those of ordinary skill in the art without creative efforts, can be with
Other attached drawings are obtained according to these figures.
Fig. 1 is the structural schematic diagram with the organic luminescent device of blue light-emitting；
Fig. 2 is a kind of structural schematic diagram for organic luminescent device that one embodiment of the invention provides；
Fig. 3 be another embodiment of the present invention provides a kind of organic luminescent device the schematic diagram of the section structure；
Fig. 4 be another embodiment of the present invention provides a kind of organic luminescent device production method flow diagram；
Fig. 5 be another embodiment of the present invention provides spectrogram.
Specific embodiment
Following will be combined with the drawings in the embodiments of the present invention, and technical solution in the embodiment of the present invention carries out clear, complete
Site preparation description, it is clear that described embodiments are only a part of the embodiments of the present invention, instead of all the embodiments.It is based on
Embodiment in the present invention, it is obtained by those of ordinary skill in the art without making creative efforts every other
Embodiment shall fall within the protection scope of the present invention.
As shown in Fig. 2, one embodiment of the invention provides a kind of organic luminescent device, which includes:
One electrode, second electrode and organic function layer.
Wherein, organic function layer includes the first doped layer prepared by the first processing procedure, the prepared by the second processing procedure
Two doped layers, and the auxiliary layer being formed between first doped layer and second doped layer.
In the present embodiment, the material of auxiliary layer is identical as the material of main part of the second doped layer, and the auxiliary layer is for improving
The performance of first doped layer.
Wherein, the electron mobility of auxiliary layer is greater than 1 × 10-4m2/ V.s, with a thickness of 1nm to 5nm.
In the present embodiment, auxiliary layer is prepared by the second processing procedure.I.e. auxiliary layer and the second doped layer pass through identical
Processing procedure is prepared.
In the present embodiment, first doped layer is organic luminous layer, and second doped layer is the common layer of blue light.Then exist
Auxiliary layer, the material of main part phase of the material and the common layer of blue light of auxiliary layer are provided between first doped layer and the second doped layer
Together, facilitate the performance of improvement organic luminous layer.
In the present embodiment, the first processing procedure for being used to prepare the first doped layer is spin-coating method, knife coating, EFI rubbing method, narrow
Seam rubbing method, strip rubbing method, dipping formula rubbing method, drum-type rubbing method, ink jet printing method, nozzle printing method and protrusive board print
Any one in brush method.
In the present embodiment, the second processing procedure for being used to prepare the second doped layer and auxiliary layer is vacuum thermal evaporation, organic vapors
Any one in deposition, laser induced thermal imaging and radiation-actuate sublimation transfer.
As shown in Fig. 2, organic function layer further include: hole injection layer, hole transmission layer, electron transfer layer and electron injection
Layer.
Another embodiment of the present invention provides the production methods of above-mentioned organic luminescent device, this method comprises: on substrate
Sequentially form first electrode, organic function layer and second electrode.
Wherein, forming the organic function layer includes: to prepare the first doped layer by the first processing procedure, in first doping
Auxiliary layer is formed on layer, the second doped layer is prepared by the second processing procedure on the auxiliary layer, wherein the auxiliary layer is for changing
It is apt to the performance of first doped layer.
In the present embodiment, the material of the auxiliary layer is identical as the material of main part of second doped layer, which uses
In the performance for improving first doped layer.
Wherein, the electron mobility of auxiliary layer is greater than 1 × 10-4m2/ V.s, with a thickness of 1nm to 5nm.
It in the present embodiment, forms the auxiliary layer and specifically includes: the auxiliary layer is prepared by the second processing procedure.
In the present embodiment, first doped layer includes organic luminous layer, and second doped layer includes the common layer of blue light.
In the present embodiment, first processing procedure is spin-coating method, knife coating, EFI rubbing method, slit coating method, strip painting
Any one in cloth method, dipping formula rubbing method, drum-type rubbing method, ink jet printing method, nozzle printing method and gelatine-pad printing.
Second processing procedure is that vacuum thermal evaporation, organic vapor phase deposition, laser induced thermal imaging and radiation-actuate distillation turn
Any one of India and China.
Specifically, forming the organic function layer further includes following steps: forming hole note on the first electrode
Enter layer, form hole transmission layer on the hole injection layer, electron transfer layer is formed on second doped layer, described
Electron injecting layer is formed on electron transfer layer.
Another embodiment of the present invention provides a kind of display devices, including the organic luminescent device in above-described embodiment.It is aobvious
Showing device for example can be display panel, display, tablet computer, mobile phone, navigator, camera, video camera, television set
Etc. equipment having a display function.
Embodiment 1
In order to illustrate more clearly of technical solution of the present invention, below with reference to OLED structure as shown in Figure 3
Diagrammatic cross-section illustrate embodiment 1, as shown in figure 4, the production method of the embodiment may particularly include following steps:
S1: forming indium tin oxide layer (Indium Tin Oxides, ITO) on substrate 1, etches the ITO layer and forms first
Electrode 2；
Wherein, substrate 1 is transparent glass, and the thickness of first electrode 2 is about 70nm.It should be noted that forming first
After electrode 2, ito glass substrate is cleaned in the ultrasound environments of deionized water, acetone and dehydrated alcohol, nitrogen N 2 is used after cleaning
It dries up and it is handled using oxygen gas plasma.
S2: by spin-coating method, hole injection layer 3, hole transmission layer 4 and the first doping are sequentially formed on the first electrode 2
Layer 5；
Specifically, (3,4-ethylenedioxythiophene) spin coating Poly on the first electrode 2 first: poly
(styrenesulfonate) abbreviation PEDOT:PSS (polymer of 3,4-rthylene dioxythiophene: kayexalate) is formed
Hole injection layer 3, the thickness of hole injection layer 3 are about 20nm；Then the spin coating on hole injection layer 3
Polyvinylcarbazole abbreviation PVK (polyvinyl carbazole), forms hole transmission layer 4, and the thickness of hole transmission layer 4 is about
20nm；Further, spin coating forms the first doped layer 5 on the hole transport layer, and the doped body of the first doping 5 is
Polyfluorene (polyfluorene), the doping object of the first doped layer 5 are Tris (2-phenylpyridine) iridium (III)
Abbreviation Ir (ppy)3(three (2- phenylpyridines) close iridium (III)), the thickness of the first doped layer 5 is about 60nm.
S3: by way of vacuum thermal evaporation, auxiliary layer 6 is deposited on the first doped layer 5；
Specifically, above-mentioned processed substrate is placed in vapor deposition chamber, after vacuum degree is lower than 5 × 10-4Pa, is led to
The mode of vacuum thermal evaporation is crossed, 2-methyl-9,10-bis (naphthalen-2-yl) anthracene abbreviation MADN are deposited
(bis- (naphthalene -2- base) anthracenes of 2- methyl -9,10-) form auxiliary layer 6, and the thickness of auxiliary layer 6 is about 2nm.
S4: by way of vacuum thermal evaporation, the second doped layer 7, electron transfer layer 8, electricity are sequentially depositing on auxiliary layer 6
Sub- implanted layer 9 and second electrode 10.
Specifically, by way of vacuum thermal evaporation, deposition forms the second doped layer 7, the second doping on auxiliary layer 6
Layer 7 is the common layer of blue light, and doped body MAND, doping object is blue fluorescent material 1-4-di- [4- (N, N-
Diphenyl) amino] styryl-benzene abbreviation DSA-Ph, the concentration for adulterating object is about 5%, the thickness of the second doped layer 7
Degree is about 18nm；Then 4,7-Diphenyl-1,10-phenanthroline (4,7- hexichol is deposited on the second doped layer 7
Base -1,10- phenanthroline) abbreviation Bphen, electron transfer layer 8 is formed, the thickness of electron transfer layer 8 is about 20nm；In electron-transport
LiF (lithium fluoride) is deposited on layer 8, forms electron injecting layer 9, the thickness of electron injecting layer 9 is about 1nm；On electron injecting layer
Al (aluminium) forms second electrode 10, and the thickness of second electrode 10 is about 120nm.
During above-mentioned vacuum thermal evaporation, except Al is etched using metallic cathode mask plate (metal mask) and evaporates speed
Rate is outside 0.3nm/s, remaining each layer is etched using open mask plate (open mask) and evaporation rate is 0.1nm/s；Device
Light-emitting area be 2mm × 2mm.
In order to embody the technical effect of the embodiment of the present invention 1, the one kind for illustrating that a comparative example provides below is organic
The production method of luminescent device:
Referring to Fig.1, device prepared by the comparative example includes stacking gradually including transparent ITO anode glass base
Bottom, hole injection layer, hole transmission layer, the first doped layer/organic luminous layer, the common layer of the second doped layer/blue light, electron-transport
Layer, electron injecting layer and second electrode/cathode, the preparation method is as follows:
In the embodiment, ito glass substrate is the transparent glass with indium tin oxide films, first electrode ITO, layer
Thickness is about 70nm, and hole injection layer is Poly (3,4-ethylenedioxythiophene): poly
(styrenesulfonate) abbreviation PEDOT:PSS, hole transmission layer are Polyvinylcarbazole abbreviation PVK, and first mixes
Diamicton/green light emitting layer doped body is polyfluorene, and the first doped layer/green light emitting layer doping object is Tris (2-
Phenylpyridine) iridium (III) abbreviation Ir (ppy) 3, the second doped layer/blue light-emitting doped body are 2-
Methyl-9,10-bis (naphthalen-2-yl) anthracene abbreviation MAND, the common layer doping of the second doped layer/blue light
Object is 1-4-di- [4- (N, N-diphenyl) amino] styryl-benzene abbreviation DSA-Ph, electron transfer layer 4,7-
Diphenyl-1,10-phenanthroline abbreviation Bphen, electron injecting layer LiF, second electrode/cathode is Al.
By the above-mentioned clear glass substrate with ITO (its surface resistance < 30 Ω/), by being lithographically formed ITO pattern electricity
Then pole is successively cleaned ito glass substrate in deionized water, acetone and dehydrated alcohol in ultrasound environments, after use N2
Dry up and carry out the processing of O2plasma (plasma).Then the successively successively spin coating hole injection layer PEDOT:PSS on ITO
(20nm), hole transmission layer PVK (20nm) and the first doped layer polyfluorene:Ir (ppy) 3 (60nm).It finally will processing
Good substrate is placed in vapor deposition chamber, after vacuum degree is lower than 5 × 10-4Pa, by way of vacuum thermal evaporation, is sequentially depositing
The common layer MAND:DSA-Ph (5%) (20nm) of second doped layer/blue light, electron transfer layer Bphen (20nm), electron injecting layer
LiF (1nm), second electrode/cathode Al (120nm).During above-mentioned vapor deposition, except Al uses metallic cathode mask plate (metal
Mask) and evaporation rate is outside 0.3nm/s, remaining each layer uses open mask plate (open mask) and evaporation rate is
0.1nm/s；The light-emitting area of device is 2mm × 2mm.
Above-described embodiment 1 and comparative example are tested, the technical effect of embodiment 1 as shown in Table 1 can be obtained
It is as follows with the comparing result of the technical effect of comparative example:
The technical effect of 1 embodiment 1 of table
| 1000nits | V | C.E.(cd/A) | P.E.(lm/w) | CIEx | CIEy | E.Q.E (%) |
| Embodiment 1 | 5.63 | 37.1 | 20.7 | 0.278 | 0.641 | 10.05 |
| Comparative example | 5.81 | 35.5 | 19.2 | 0.278 | 0.641 | 9.66 |
As shown in Table 1, under conditions of brightness is 1000nits, the operation voltage of organic luminescent device in embodiment 1
(Voltage), current efficiency (Current Efficiency), power efficiency (Power Efficiency), chromaticity coordinates
(CIE1931) and external quantum efficiency (External Quantum Efficiency) be respectively 5.63V, 37.1cd/A,
20.7lm/w, (0.278,0.641), 10.05%；And in comparative example organic luminescent device operation voltage (Voltage),
Current efficiency (Current Efficiency), power efficiency (Power Efficiency), chromaticity coordinates (CIE1931) and outer amount
Sub- efficiency (External Quantum Efficiency) be respectively 5.81V, 35.5cd/A, 19.2m/w, (0.278,
0.641), 9.66%.It can be seen that the operation voltage of organic luminescent device compares in embodiment 1 under identical brightness conditions
Operation voltage than organic luminescent device in embodiment is lower, and the current efficiency of organic luminescent device, power effect in embodiment 1
Rate and external quantum efficiency are higher than comparative example.Therefore, the skill provided compared to comparative example, the embodiment of the present invention 1
Art scheme can be effectively reduced operation voltage and improve efficiency.
As shown in figure 5, the spectrogram comparing result of the technical solution and the prior art provided for embodiment 1, it can by Fig. 5
Know, the spectrogram of the embodiment of the present invention 1 and the prior art essentially coincides, therefore technical solution provided by the embodiment of the present invention 1
Do not change photochromic.
The embodiment of the invention provides a kind of organic luminescent devices and preparation method thereof, by the first doped layer and second
One layer of auxiliary layer is prepared between doped layer, the material of the auxiliary layer is identical as the material of main part of the second doped layer, can improve the
The performance of one doped layer solves the problems, such as bad heterogeneous interface, and then improves OLED service life, drop low operating voltage and promote effect
Rate.
The above embodiments are merely illustrative of the technical solutions of the present invention, rather than its limitations；Although with reference to the foregoing embodiments
Invention is explained in detail, those skilled in the art should understand that；It still can be to aforementioned each implementation
Technical solution documented by example is modified or equivalent replacement of some of the technical features；And these modification or
Replacement, the spirit and scope for technical solution of various embodiments of the present invention that it does not separate the essence of the corresponding technical solution.
Claims (15)
1. a kind of organic luminescent device, comprising: first electrode, second electrode and organic function layer, it is characterised in that:
The organic function layer includes the first doped layer prepared by the first processing procedure, the second doping prepared by the second processing procedure
Layer, and the auxiliary layer being formed between first doped layer and second doped layer；The material of the auxiliary layer and institute
The material of main part for stating the second doped layer is identical, and the auxiliary layer is used to improve the performance of first doped layer,
Wherein, the doping object in first doped layer is that three (2- phenylpyridines) close iridium (III),
Doping object in second doped layer is blue fluorescent material, and material of main part in second doped layer and
The material of the auxiliary layer is (bis- (naphthalene -2- base) anthracenes of 2- methyl -9,10-).
2. organic luminescent device according to claim 1, which is characterized in that the electron mobility of the auxiliary layer is greater than 1
×10-4m2/V· s。
3. organic luminescent device according to claim 1, which is characterized in that the auxiliary layer with a thickness of 1nm to 5nm.
4. organic luminescent device according to claim 1, which is characterized in that the auxiliary layer is prepared by the second processing procedure
At.
5. organic luminescent device according to claim 1, which is characterized in that first doped layer includes organic light emission
Layer, second doped layer includes the common layer of blue light.
6. organic luminescent device according to claim 1, which is characterized in that first processing procedure be spin-coating method, knife coating,
EFI rubbing method, slit coating method, strip rubbing method, dipping formula rubbing method, drum-type rubbing method, ink jet printing method, nozzle
Any one in print process and gelatine-pad printing.
7. organic luminescent device according to claim 1, which is characterized in that second processing procedure is vacuum thermal evaporation, has
Any one in machine vapor deposition, laser induced thermal imaging and radiation-actuate sublimation transfer.
8. organic luminescent device according to claim 1, which is characterized in that the organic function layer further include: hole note
Enter layer, hole transmission layer, electron transfer layer and electron injecting layer.
9. a kind of production method of organic luminescent device, which is characterized in that sequentially form first electrode, organic functions on substrate
Layer and second electrode, it is characterised in that:
Forming the organic function layer includes: to prepare the first doped layer by the first processing procedure, is formed on first doped layer
Auxiliary layer, prepares the second doped layer by the second processing procedure on the auxiliary layer, and the material of the auxiliary layer is mixed with described second
The material of main part of diamicton is identical, and the auxiliary layer is used to improve the performance of first doped layer,
Wherein, the doping object in first doped layer is that three (2- phenylpyridines) close iridium (III),
Doping object in second doped layer is blue fluorescent material, and material of main part in second doped layer and
The material of the auxiliary layer is (bis- (naphthalene -2- base) anthracenes of 2- methyl -9,10-).
10. according to the method described in claim 9, it is characterized in that, forming the auxiliary layer includes: to be prepared by the second processing procedure
The auxiliary layer.
11. according to the method described in claim 9, it is characterized in that, first doped layer includes organic luminous layer, described
Two doped layers include the common layer of blue light.
12. according to the method described in claim 9, it is characterized in that, first processing procedure is spin-coating method, knife coating, electrospray
Cloth method, slit coating method, strip rubbing method, dipping formula rubbing method, drum-type rubbing method, ink jet printing method, nozzle printing method
And any one in gelatine-pad printing.
13. according to the method described in claim 9, it is characterized in that, second processing procedure is vacuum thermal evaporation, organic vapors sink
Any one in product, laser induced thermal imaging and radiation-actuate sublimation transfer.
14. according to the method described in claim 9, it is characterized in that, forming the organic function layer further include: described first
Hole injection layer is formed on electrode, forms hole transmission layer on the hole injection layer, is formed on second doped layer
Electron transfer layer forms electron injecting layer on the electron transport layer.
15. a kind of display device, which is characterized in that including organic luminescent device of any of claims 1-8.
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| CN108492759B (en) * | 2018-04-12 | 2021-04-06 | 京东方科技集团股份有限公司 | Photosensitive device, optical detection circuit, driving method and display device |
| CN110690353B (en) * | 2019-09-06 | 2021-01-15 | 深圳市华星光电半导体显示技术有限公司 | Preparation method of series OLED device |
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| US20170279062A1 (en) | 2017-09-28 |
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| WO2016150264A1 (en) | 2016-09-29 |
| US20180138438A9 (en) | 2018-05-17 |
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