CN104698770B - 利用接近式拼接度量制作光刻图像场的方法 - Google Patents
利用接近式拼接度量制作光刻图像场的方法 Download PDFInfo
- Publication number
- CN104698770B CN104698770B CN201410680171.3A CN201410680171A CN104698770B CN 104698770 B CN104698770 B CN 104698770B CN 201410680171 A CN201410680171 A CN 201410680171A CN 104698770 B CN104698770 B CN 104698770B
- Authority
- CN
- China
- Prior art keywords
- flap
- area
- field
- error
- photoetching
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70425—Imaging strategies, e.g. for increasing throughput or resolution, printing product fields larger than the image field or compensating lithography- or non-lithography errors, e.g. proximity correction, mix-and-match, stitching or double patterning
- G03F7/70475—Stitching, i.e. connecting image fields to produce a device field, the field occupied by a device such as a memory chip, processor chip, CCD, flat panel display
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
Abstract
Description
Claims (17)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US14/100,297 | 2013-12-09 | ||
US14/100,297 US9087740B2 (en) | 2013-12-09 | 2013-12-09 | Fabrication of lithographic image fields using a proximity stitch metrology |
Publications (2)
Publication Number | Publication Date |
---|---|
CN104698770A CN104698770A (zh) | 2015-06-10 |
CN104698770B true CN104698770B (zh) | 2017-04-12 |
Family
ID=53271917
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201410680171.3A Expired - Fee Related CN104698770B (zh) | 2013-12-09 | 2014-11-24 | 利用接近式拼接度量制作光刻图像场的方法 |
Country Status (2)
Country | Link |
---|---|
US (1) | US9087740B2 (zh) |
CN (1) | CN104698770B (zh) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP3796088A1 (en) * | 2019-09-23 | 2021-03-24 | ASML Netherlands B.V. | Method and apparatus for lithographic process performance determination |
WO2021043519A1 (en) * | 2019-09-04 | 2021-03-11 | Asml Netherlands B.V. | Method and apparatus for lithographic process performance determination |
US10296702B2 (en) | 2017-03-15 | 2019-05-21 | Applied Materials Israel Ltd. | Method of performing metrology operations and system thereof |
US10120973B2 (en) | 2017-03-15 | 2018-11-06 | Applied Materials Israel Ltd. | Method of performing metrology operations and system thereof |
CN109597224B (zh) * | 2018-11-27 | 2021-04-23 | Tcl华星光电技术有限公司 | 马赛克拼接产品拼接区调整方法及装置 |
US10990022B2 (en) | 2018-12-20 | 2021-04-27 | Kla Corporation | Field-to-field corrections using overlay targets |
US11237485B2 (en) | 2020-01-21 | 2022-02-01 | Applied Materials, Inc. | System, software application, and method for lithography stitching |
KR20220044016A (ko) | 2020-09-29 | 2022-04-06 | 삼성전자주식회사 | 극자외선(euv) 포토마스크 및 이를 이용한 반도체 장치 제조 방법 |
CN114690593B (zh) * | 2020-12-30 | 2024-06-11 | 科磊股份有限公司 | 一种制造集成电路的方法和系统 |
CN113296375A (zh) * | 2021-06-07 | 2021-08-24 | 合肥维信诺科技有限公司 | 显示面板拼接曝光套刻精度检测方法、装置和显示面板 |
CN114296321B (zh) * | 2021-12-29 | 2023-07-28 | 上海集成电路装备材料产业创新中心有限公司 | 光刻拼接误差的检测方法、二维光栅的制造方法及掩模板 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5757507A (en) | 1995-11-20 | 1998-05-26 | International Business Machines Corporation | Method of measuring bias and edge overlay error for sub-0.5 micron ground rules |
US6498685B1 (en) | 1999-01-11 | 2002-12-24 | Kenneth C. Johnson | Maskless, microlens EUV lithography system |
US6350548B1 (en) | 2000-03-15 | 2002-02-26 | International Business Machines Corporation | Nested overlay measurement target |
US7261983B2 (en) * | 2000-12-08 | 2007-08-28 | Litel Instruments | Reference wafer and process for manufacturing same |
US6638671B2 (en) | 2001-10-15 | 2003-10-28 | International Business Machines Corporation | Combined layer-to-layer and within-layer overlay control system |
TWI264619B (en) | 2002-12-19 | 2006-10-21 | Asml Netherlands Bv | A lithographic projection mask, a device manufacturing method using a lithographic projection mask and a device manufactured thereby |
SG118239A1 (en) * | 2003-04-24 | 2006-01-27 | Asml Netherlands Bv | Lithographic processing method and device manufactured thereby |
US7410736B2 (en) | 2003-09-30 | 2008-08-12 | Asml Holding N.V. | Methods and systems to compensate for a stitching disturbance of a printed pattern in a maskless lithography system not utilizing overlap of the exposure zones |
US7403264B2 (en) * | 2004-07-08 | 2008-07-22 | Asml Netherlands B.V. | Lithographic projection apparatus and a device manufacturing method using such lithographic projection apparatus |
US7474401B2 (en) | 2005-09-13 | 2009-01-06 | International Business Machines Corporation | Multi-layer alignment and overlay target and measurement method |
US7987057B1 (en) | 2007-09-07 | 2011-07-26 | Kla-Tencor Corporation | Intelligent stitching boundary defect inspection |
US7958482B2 (en) | 2008-04-30 | 2011-06-07 | International Business Machines Corporation | Stitched circuitry region boundary identification for stitched IC chip layout |
NL2003762A (en) | 2008-11-18 | 2010-05-20 | Asml Netherlands Bv | Lithographic apparatus and device manufacturing method. |
US8361683B2 (en) | 2010-04-09 | 2013-01-29 | International Business Machines Corporation | Multi-layer chip overlay target and measurement |
US8728713B2 (en) | 2010-09-30 | 2014-05-20 | Truesense Imaging, Inc. | Stitching methods using multiple microlithographic expose tools |
-
2013
- 2013-12-09 US US14/100,297 patent/US9087740B2/en not_active Expired - Fee Related
-
2014
- 2014-11-24 CN CN201410680171.3A patent/CN104698770B/zh not_active Expired - Fee Related
Also Published As
Publication number | Publication date |
---|---|
CN104698770A (zh) | 2015-06-10 |
US9087740B2 (en) | 2015-07-21 |
US20150162249A1 (en) | 2015-06-11 |
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TR01 | Transfer of patent right |
Effective date of registration: 20171114 Address after: Grand Cayman, Cayman Islands Patentee after: GLOBALFOUNDRIES INC. Address before: American New York Patentee before: Core USA second LLC Effective date of registration: 20171114 Address after: American New York Patentee after: Core USA second LLC Address before: American New York Patentee before: International Business Machines Corp. |
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CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20170412 Termination date: 20191124 |