CN104698511A - Method for improving absorption rate of near infrared band of vanadium oxide film and prepared vanadium oxide film thereof - Google Patents
Method for improving absorption rate of near infrared band of vanadium oxide film and prepared vanadium oxide film thereof Download PDFInfo
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- CN104698511A CN104698511A CN201510048037.6A CN201510048037A CN104698511A CN 104698511 A CN104698511 A CN 104698511A CN 201510048037 A CN201510048037 A CN 201510048037A CN 104698511 A CN104698511 A CN 104698511A
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B1/00—Optical elements characterised by the material of which they are made; Optical coatings for optical elements
- G02B1/10—Optical coatings produced by application to, or surface treatment of, optical elements
- G02B1/12—Optical coatings produced by application to, or surface treatment of, optical elements by surface treatment, e.g. by irradiation
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- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B5/00—Optical elements other than lenses
- G02B5/003—Light absorbing elements
Abstract
The invention provides a method for improving absorption rate of a near infrared band of a vanadium oxide film. The method for improving the absorption rate of the near infrared band of the vanadium oxide film includes following steps: forming a plurality of cylindrical units which are arranged in a spare shape on the surface of the vanadium oxide film through one method among chemical corrosion, photo etching and impressing methods, forming photonic crystal structures staggered according to refractive indexes between the arrangement structure of the plurality of the cylindrical units and air, coupling incident waves into a Bloch wave mode in a plane by using coupling of a periodic structure for the incident waves, and thereby improving the light absorption rate of the vanadium oxide film on the near infrared band. Compared with a vanadium oxide film not in the photonic crystal periodic structure, the absorption rate of the vanadium oxide film prepared through the method for improving the absorption rate of the near infrared band of the vanadium oxide film is obviously higher than the vanadium oxide film not in the photonic crystal periodic structure in the wave band from 700nm to 1700nm.
Description
Technical field
The present invention relates to Physical Electronics technical field, increase the method for vanadium oxide film near-infrared band absorptivity and vanadium oxide film prepared therefrom in particular to a kind of.
Background technology
Heat-sensitive eye is the components and parts being carried out probe radiation by thermal effect, its basic working method is: after absorbing infrared radiation according to infrared detector cell, temperature changes, and the change of measuring the sensitive element physical property (as size, resistance, resonant frequency etc.) caused by temperature variation detects infrared radiation.Heat-sensitive eye, without the need to chilling unit, under can working in room temperature environment, all has obvious advantage, has become the focus of research at present, and shown huge market potential in low cost, low-power consumption, miniaturization and reliability etc.
In order to promote the infrared acquisition efficiency of heat-sensitive eye, strengthening detection sensitivity, being necessary to study the method improving detector near-infrared band absorption efficiency.
Vanadium dioxide (VO
2) be the metal oxide with phase transition property, before and after its phase transformation, the change in resistance of material can reach 3 ~ 5 orders of magnitude, can reach-2% ~-3%K at the temperature coefficient of resistivity (TCR) of near room temperature
-1, its size is 5 ~ 10 times of common metal thin-film thermistor, and has lower 1/f noise coefficient, and therefore it is the ideal material being used for preparing non-refrigeration infrared detector thermistor detector in the detection of 8-12um LONG WAVE INFRARED at present.But it is also very undesirable directly to utilize vanadium oxide film to carry out Effect on Detecting.
At present, the method improving vanadium oxide film near-infrared band absorptivity is mainly as follows: film thickness adjusts, and by refractive index and the isoparametric adjustment of film thickness, the reflection of film surface is seen minimum, thus increases absorption; Impurity adulterates, and on the basis keeping vanadium oxide characteristic, adulterate a small amount of impurity, thus change its optical property, increases absorptivity; Superficial makings or light trapping structure, as surface period grating or Bragg catoptron, increase absorption efficiency by the light trapping effect of structure.But said method all exists certain deficiency and restriction, as index x thickness coupling is applicable to low chromatic dispersion material, and vanadium oxide is strong dispersion material; Impurity concentration in doping method is higher with doping process control difficulties; Texture or light trapping structure need the further checking of testing at present.
Summary of the invention
The object of the invention is to provide a kind of method increasing vanadium oxide film near-infrared band absorptivity, utilize periodic structure to the coupling of incident wave, incident wave is coupled as the Bloch wave mode in face, thus increases the efficiency of light absorption of vanadium oxide film at near-infrared band.
Another object of the present invention is to, a kind of vanadium oxide film prepared based on said method is provided.
Above-mentioned purpose of the present invention is realized by the technical characteristic of independent claims, and dependent claims develops the technical characteristic of independent claims with alternative or favourable mode.
For reaching above-mentioned purpose, the present invention proposes a kind of method increasing vanadium oxide film near-infrared band absorptivity, comprises the following steps:
By the one in chemical corrosion, photoetching or impression, form the multiple cylindrical unit in square arrangement on vanadium oxide film surface, the arrangement architecture that the plurality of cylindrical unit is formed and air form the staggered photon crystal structure of refractive index height.
In further embodiment, in preceding method, each cylindrical unit forms a cylinder shape medium post, and the height of dielectric post is 250nm, and the thickness of vanadium oxide film is 200nm.
In further embodiment, in preceding method, in the arrangement architecture that described multiple cylindrical unit is formed, cylindrical unit is arranged in square on the two dimensional surface at vanadium oxide film place, the bottom surface radius r of cylindrical unit and the arrangement cycle of described square arrangement structure, i.e. foursquare length of side a, its ratio r/a=0.35.
In a further embodiment, shown arrangement cycle a is 500nm, and the radius r of described circular cell is 175nm.
According to above-mentioned improvement, another aspect of the present invention proposes a kind of vanadium oxide film with periodic structure prepared according to preceding method.
Utilize the vanadium oxide film prepared by method of increase vanadium oxide film near-infrared band efficiency of light absorption proposed by the invention, pass through electromagnetic-field simulation, result shows: compared with not adopting the vanadium oxide film of photonic crystal periodic structure, based on the present invention manufacture vanadium oxide film in 700nm-1700nm wave band absorptivity apparently higher than the former, maximum absorbance amplification reaches 28.47%.In addition, compared with existing other technologies, in the preparation process of this method, accurately can control the parameter of film, related chemistry corrosion and photoetching technique skillful, obtained vanadium oxide film near infrared transmitance have stablizes and significantly increase.
As long as should be appreciated that aforementioned concepts and all combinations of extra design described in further detail below can be regarded as a part for subject matter of the present disclosure when such design is not conflicting.In addition, all combinations of theme required for protection are all regarded as a part for subject matter of the present disclosure.
The foregoing and other aspect of the present invention's instruction, embodiment and feature can be understood by reference to the accompanying drawings from the following description more all sidedly.Feature and/or the beneficial effect of other additional aspect of the present invention such as illustrative embodiments will be obvious in the following description, or by learning in the practice of the embodiment according to the present invention's instruction.
Accompanying drawing explanation
Accompanying drawing is not intended to draw in proportion.In the accompanying drawings, each identical or approximately uniform ingredient illustrated in each figure can represent with identical label.For clarity, in each figure, not each ingredient is all labeled.Now, the embodiment of various aspects of the present invention also will be described with reference to accompanying drawing by example, wherein:
The schematic diagram of the vanadium oxide film prepared by method of effective increase vanadium oxide film near-infrared band absorption efficiency that Fig. 1 proposes for the present invention.
Fig. 2 is the two-dimensional structure schematic diagram of vanadium oxide film in Fig. 1.
Fig. 3 is the absorptivity-wavelength variations curve of vanadium oxide film in Fig. 1.
Embodiment
In order to more understand technology contents of the present invention, institute's accompanying drawings is coordinated to be described as follows especially exemplified by specific embodiment.
Each side with reference to the accompanying drawings to describe the present invention in the disclosure, shown in the drawings of the embodiment of many explanations.Embodiment of the present disclosure must not be intended to comprise all aspects of the present invention.Be to be understood that, multiple design presented hereinbefore and embodiment, and describe in more detail below those design and embodiment can in many ways in any one is implemented, this is because design disclosed in this invention and embodiment are not limited to any embodiment.In addition, aspects more disclosed by the invention can be used alone, or otherwisely anyly appropriately combinedly to use with disclosed by the invention.
According to better embodiment of the present invention, propose a kind of method increasing vanadium oxide film near-infrared band absorptivity, comprise the following steps:
By the one in chemical corrosion, photoetching or impression, form the multiple cylindrical unit in square arrangement on vanadium oxide film surface, the arrangement architecture that the plurality of cylindrical unit is formed and air form the staggered photon crystal structure of refractive index height.
Figure 1 shows that the schematic diagram of the photonic crystal vanadium oxide film utilizing said method to prepare, wherein label 1 represents cylindrical unit (vanadium oxide), label 3 represents vanadium oxide film substrate, and cylinder units 1 is in air (label 2 in Fig. 2).Be the exemplary structure giving vanadium oxide film in figure, concrete cylinder quantity can be determined according to actual conditions.
Preceding method is in implementation process, and preferably, the thickness H of vanadium oxide substrate 3 is 200nm, and the height h of cylindrical unit 1 is 250nm.
In an alternate embodiment of the invention, at preceding method in implementation process, in the arrangement architecture that multiple cylindrical unit 1 is formed, cylindrical unit 1 is arranged in square on the two dimensional surface at vanadium oxide film substrate 3 place, the bottom surface radius r of cylindrical unit 1 and the arrangement cycle of square arrangement structure, i.e. foursquare length of side a, its ratio r/a=0.35.
In this example, preferably, described arrangement cycle a is 500nm, and the radius r of described cylindrical unit is 175nm.
As shown in Figure 1 with Figure 2, according to 2 D photon crystal periodic structure obtained in the present embodiment, its primitive unit cell is cylinder (label 1), and arrangement mode is square arrangement.
As shown in Figure 1 and Figure 2, the vanadium oxide film utilizing the present embodiment method to prepare, is calculated by simulation analysis, and contrasts with the equal model without photon crystal structure, and gained absorbance curves as shown in Figure 3.Can find out, due to the introducing of photonic crystal periodic structure in embodiment, at near-infrared band (700nm-1700nm), the efficiency of light absorption of vanadium oxide film has had obvious lifting.By being analyzed the absorptivity integration of whole wave band, the lifting ratio of absorptivity reaches 28.47%.Thus confirm that the method that the present embodiment proposes is increasing the good effect in vanadium oxide film absorptivity significantly.
Although the present invention with preferred embodiment disclose as above, so itself and be not used to limit the present invention.Persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is when being as the criterion depending on those as defined in claim.
Claims (8)
1. increase a method for vanadium oxide film near-infrared band absorptivity, it is characterized in that, comprise the following steps:
By the one in chemical corrosion, photoetching or impression, form the multiple cylindrical unit in square arrangement on vanadium oxide film surface, the arrangement architecture that the plurality of cylindrical unit is formed and air form the staggered photon crystal structure of refractive index height.
2. the method for increase vanadium oxide film near-infrared band absorptivity according to claim 1, it is characterized in that, in preceding method, each cylindrical unit forms a cylinder shape medium post, the height of dielectric post is 250nm, and the thickness of vanadium oxide film is 200nm.
3. the method for increase vanadium oxide film near-infrared band absorptivity according to claim 1, it is characterized in that, in preceding method, in the arrangement architecture that described multiple cylindrical unit is formed, cylindrical unit is arranged in square on the two dimensional surface at vanadium oxide film place, the bottom surface radius r of cylindrical unit and the arrangement cycle of described square arrangement structure, i.e. foursquare length of side a, its ratio r/a=0.35.
4. the method for increase vanadium oxide film near-infrared band absorptivity according to claim 3, is characterized in that, described arrangement cycle a is 500nm, and the radius r of described circular cell is 175nm.
5. have a vanadium oxide film for periodic structure, it is characterized in that, prepared by the method according to aforementioned increase vanadium oxide film near-infrared band absorptivity according to claim 1.
6. the vanadium oxide film with periodic structure according to claim 5, is characterized in that, each cylindrical unit of described vanadium oxide film forms a cylinder shape medium post, and the height of dielectric post is 250nm, and the thickness of vanadium oxide film is 200nm.
7. the vanadium oxide film with periodic structure according to claim 5 or 6, it is characterized in that, in the arrangement architecture that described multiple cylindrical unit is formed, cylindrical unit is arranged in square on the two dimensional surface at vanadium oxide film place, the bottom surface radius r of cylindrical unit and the arrangement cycle of described square arrangement structure, i.e. foursquare length of side a, its ratio r/a=0.35.
8. the vanadium oxide film with periodic structure according to claim 7, is characterized in that, described arrangement cycle a is 500nm, and the radius r of described circular cell is 175nm.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201510048037.6A CN104698511B (en) | 2015-01-29 | 2015-01-29 | Increase the method for vanadium oxide film near infrared band absorbance and vanadium oxide film prepared therefrom |
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| CN201510048037.6A CN104698511B (en) | 2015-01-29 | 2015-01-29 | Increase the method for vanadium oxide film near infrared band absorbance and vanadium oxide film prepared therefrom |
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| CN104698511B CN104698511B (en) | 2016-09-21 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109470370A (en) * | 2018-11-20 | 2019-03-15 | 电子科技大学 | The double-deck vanadium oxide film component and dual-band infrared probe unit and preparation method thereof |
| CN110451817A (en) * | 2019-07-30 | 2019-11-15 | 电子科技大学 | A kind of intelligent fenestrated membrane and preparation method thereof based on vanadium dioxide and metamaterial structure |
| CN111077603A (en) * | 2019-12-30 | 2020-04-28 | 哈尔滨工业大学 | Flexible film with adjustable infrared emissivity and preparation method thereof |
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| KR20110077867A (en) * | 2009-12-30 | 2011-07-07 | 미래나노텍(주) | Anti-reflection film and its manufacturing method |
| CN102393571A (en) * | 2011-11-09 | 2012-03-28 | 南开大学 | Photonic crystal waveguide terahertz modulator for modulating terahertz waves at high speed |
| CN103955012A (en) * | 2014-04-22 | 2014-07-30 | 南京理工大学 | Method for increasing near-infrared band transmittivity of vanadium oxide thin film and vanadium oxide thin film prepared through method |
| CN103979607A (en) * | 2014-04-30 | 2014-08-13 | 中国科学院广州能源研究所 | Vanadium oxide nanopillar array with thermochromism and preparation method thereof |
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Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20110077867A (en) * | 2009-12-30 | 2011-07-07 | 미래나노텍(주) | Anti-reflection film and its manufacturing method |
| CN102393571A (en) * | 2011-11-09 | 2012-03-28 | 南开大学 | Photonic crystal waveguide terahertz modulator for modulating terahertz waves at high speed |
| CN103955012A (en) * | 2014-04-22 | 2014-07-30 | 南京理工大学 | Method for increasing near-infrared band transmittivity of vanadium oxide thin film and vanadium oxide thin film prepared through method |
| CN103979607A (en) * | 2014-04-30 | 2014-08-13 | 中国科学院广州能源研究所 | Vanadium oxide nanopillar array with thermochromism and preparation method thereof |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109470370A (en) * | 2018-11-20 | 2019-03-15 | 电子科技大学 | The double-deck vanadium oxide film component and dual-band infrared probe unit and preparation method thereof |
| CN110451817A (en) * | 2019-07-30 | 2019-11-15 | 电子科技大学 | A kind of intelligent fenestrated membrane and preparation method thereof based on vanadium dioxide and metamaterial structure |
| CN110451817B (en) * | 2019-07-30 | 2021-06-15 | 电子科技大学 | Intelligent window film based on vanadium dioxide and metamaterial structure and preparation method thereof |
| CN111077603A (en) * | 2019-12-30 | 2020-04-28 | 哈尔滨工业大学 | Flexible film with adjustable infrared emissivity and preparation method thereof |
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| CN104698511B (en) | 2016-09-21 |
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