CN103955012B - A kind ofly increase the method for vanadium oxide film near-infrared band transmissivity and vanadium oxide film prepared therefrom - Google Patents
A kind ofly increase the method for vanadium oxide film near-infrared band transmissivity and vanadium oxide film prepared therefrom Download PDFInfo
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- CN103955012B CN103955012B CN201410164376.6A CN201410164376A CN103955012B CN 103955012 B CN103955012 B CN 103955012B CN 201410164376 A CN201410164376 A CN 201410164376A CN 103955012 B CN103955012 B CN 103955012B
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Abstract
The invention provides a kind of method increasing vanadium oxide film near-infrared band transmissivity, comprise the following steps: on vanadium oxide film surface by etching or impressing, form the multiple square cellular construction be triangularly arranged, this structure and air are combined to form the staggered 2 D photon crystal periodic structure of refractive index height.The invention still further relates to a kind of vanadium oxide film prepared by said method.The solution of the present invention utilizes the forbidden band characteristic of periodic structure, significantly can increase the transmissivity of vanadium oxide film at near-infrared band.
Description
Technical field
The present invention relates to Physical Electronics technical field, increase the method for vanadium oxide film near-infrared band transmissivity and vanadium oxide film prepared therefrom in particular to a kind of.
Background technology
Infrared eye is the electrooptical device infrared radiation signal of incidence being converted to electric signal output.In order to collect the information of incident light better, detector is needed all to have good spectral response at visible ray to near-infrared band.Current infrared eye is better in visible region sensitivity, but generally undesirable in the sensitivity of near-infrared band, and device detection efficiency is lower.So need research to improve the method for device near-infrared band detection efficiency.
Transitional element vanadium has excellent physics, chemical property, under cryogenic, and VO
2have IR-sensitive, its semiconductor has higher transmissivity relative to infrared light, is the good material preparing high-transmission rate film.But directly utilize the photoelectric characteristic of vanadium oxide to carry out infrared imagery technique more complicated.The current raising vanadium oxide film rate of penetrating mainly contains following methods: doping heavy metal method, as Doped Tungsten, gold etc., utilizes the doping characteristic of metal to promote the transmissison characteristic changing crystal; Change vanadium oxide crystallite dimension, by the size of adjustment vanadium oxide crystal grain, to adjust the transmissivity increasing film; Improve preparation technology, as heat treatment temperature in controlled oxidization vanadium Crystallization process, the techniques such as annealing temperature, preparation has the film of high transmittance.But above-mentioned improving one's methods all exists certain deficiency and defect, as preparation process is complicated, control difficulty higher; Film transmission promotes not obvious or expanded reach is little, cannot be put to practical application etc.
Summary of the invention
The object of the invention is to provide a kind of method increasing vanadium oxide film near-infrared band transmissivity, utilizes the forbidden band characteristic of periodic structure to increase the transmissivity of vanadium oxide film at near-infrared band.
Another aspect of the present invention also relates to a kind of vanadium oxide film utilizing said method to prepare.
For reaching above-mentioned purpose, the technical solution adopted in the present invention is as follows:
A kind of method increasing vanadium oxide film near-infrared band transmissivity, comprise the following steps: on vanadium oxide film surface by etching or impressing, form the multiple square cellular construction be triangularly arranged, this structure and air are combined to form the staggered 2 D photon crystal periodic structure of refractive index height.
In further embodiment, in preceding method, form the square unit of dielectric posts shape, the height of dielectric posts is identical with the thickness of vanadium oxide film.
In further embodiment, in preceding method, the height of dielectric posts and the thickness of vanadium oxide film are 200nm.
In further embodiment, in preceding method, form multiple to be triangularly arranged and end face is foursquare square unit, each square unit is arranged in regular hexagon shape in two dimension, its dutycycle r/a=0.35, wherein r is the described foursquare length of side, and a is the arrangement cycle of described arranged in regular hexagon shape, the spacing that namely positive triangle is capable or positive.
In further embodiment, described arrangement cycle a is 500nm, and described square length of side r is 175nm.
According to above-mentioned improvement, another aspect of the present invention proposes a kind of vanadium oxide film.
Utilize the preparation-obtained vanadium oxide film of method of increase vanadium oxide film near-infrared band transmissivity proposed by the invention, simulation result shows: compared with not adopting the vanadium oxide film of photonic crystal periodic structure, the transmissivity of the vanadium oxide film utilizing the present invention to prepare is at infrared band apparently higher than the former, and its maximum transmission rate amplification can reach 12%.In addition, compared with existing additive method, the manufacturing process controllable precise of this method, etching and stamping technique skillful, the near-infrared band transmitance obtained in the wave band of a fixed width stablize and have obvious increase.
Accompanying drawing explanation
Fig. 1 is the schematic diagram of the vanadium oxide film that the method utilizing preferred embodiment of the present invention to increase vanadium oxide film near-infrared band transmissivity prepares.
Fig. 2 is the schematic diagram of the 2 D photon crystal periodic structure of vanadium oxide film in Fig. 1.
Fig. 3 can be with schematic diagram for the periodic structure of 2 D photon crystal shown in Fig. 2.
The forbidden band change schematic diagram that Fig. 4 is the periodic structure of 2 D photon crystal shown in Fig. 2.
Fig. 5 a, 5b are respectively square-square periodic structure schematic diagram of contrast and can be with change schematic diagram.
Fig. 6 a, 6b are respectively contrast circle-triangle periodic structure schematic diagram and can be with change schematic diagram.
Fig. 7 a, 7b are respectively contrast circle-square periodic structure schematic diagram and can be with change schematic diagram.
Fig. 8 is the transmissivity versus wavelength variation relation curve of vanadium oxide film in Fig. 1.
Embodiment
In order to more understand technology contents of the present invention, institute's accompanying drawings is coordinated to be described as follows especially exemplified by specific embodiment.
According to better embodiment of the present invention, a kind of method increasing vanadium oxide film near-infrared band transmissivity proposed, its realization comprises the following steps: on vanadium oxide film surface by etching or impressing, form the multiple square cellular construction be triangularly arranged, this structure and air are combined to form the staggered 2 D photon crystal periodic structure of refractive index height.
Figure 1 shows that the schematic diagram of the vanadium oxide film utilizing said method to prepare, wherein label 1 represents square unit (vanadium oxide VO
2), label 2 represents vanadium oxide substrate and vanadium oxide film, and label 3 represents air.Certainly, in the drawings, each square unit is only exemplarily represent, does not all mark all square unit.
In an alternate embodiment of the invention, at preceding method in implementation process, form the square unit of dielectric posts shape, the height of dielectric posts is identical with the thickness of vanadium oxide film.
Preferably, the height of dielectric posts and the thickness of vanadium oxide film are 200nm.
In an alternate embodiment of the invention, at preceding method in implementation process, form multiple to be triangularly arranged and end face is foursquare square unit, each square unit is arranged in regular hexagon shape in two dimension, its dutycycle r/a=0.35, wherein r is the described foursquare length of side, and a is the arrangement cycle of described arranged in regular hexagon shape, the spacing that namely positive triangle is capable or positive.
Preferably, described arrangement cycle a is 500nm, and described square length of side r is 175nm.
As shown in Figure 1 with Figure 2, according to 2 D photon crystal periodic structure obtained in the present embodiment, its primitive unit cell is square (the square unit of the vanadium oxide that label 1 represents), and arrangement mode is triangle arrangement.
As Fig. 2, the square unit formed is the square unit of dielectric posts shape, and the height of dielectric posts is identical with the thickness of vanadium oxide film.The material of dielectric posts is VO
2, refractive index n=2.04.
As an optional embodiment, the height of dielectric posts and the thickness of vanadium oxide film are 200nm.As shown in Figure 1, base material is all the VO of n=2.04
2, be the square tabular body of a length of side 2400nm.
The described square unit be triangularly arranged, its end face is square, and each square unit is arranged in regular hexagon shape in two dimension, its dutycycle r/a=0.35, wherein r is the described foursquare length of side, and a is the arrangement cycle of described arranged in regular hexagon shape, the spacing that namely positive triangle is capable or positive.
As an optional embodiment, described arrangement cycle a is 500nm, and described square length of side r is 175nm.
As shown in Figure 1 and Figure 2, utilize the vanadium oxide film that the method for the present embodiment prepares, its energy band diagram as shown in Figure 3, can find out that its forbidden band is positioned at a/ λ ∈ [0.43,0.55], △ (a/ λ)=0.12.The forbidden band change of the 2 D photon crystal periodic structure of the present embodiment shown in composition graphs 4, shown in composition graphs 5a, 5b (square-square periodic structure), 6a, 6b (circle-triangle periodic structure), 7a, 7b (circle-square periodic structure), be respectively the structural representation of different photon crystal structure and change signal can be with, the situation of change that dutycycle r/a can be with in 0.15 to 0.4 scope, can find out, the photon crystal structure structure of square-triangle arrangement has the widest photonic crystal band.So in the above embodiment of the present invention, choose the structure of this structure for surface period structure vanadium oxide film.
There is the reversible transition of semiconductor to metal in vanadium oxide, tetragonal crystalline structure when its structure is converted to high temperature by monoclinic structure during low temperature 68 DEG C time.Along with the change of crystalline network, the light transmission rate of vanadium oxide and reflectivity etc. are undergone mutation.Under cryogenic conditions, its semiconductor has higher transmitance relative to infrared light, and very low to the transmissivity of infrared light at high operating temperatures, presents sudden change, show obvious phase transition temperature characteristic in transformation temperature place transmissivity.
In the present embodiment, modeling and simulation is carried out to the vanadium oxide film (as shown in Figure 1, 2) based on surface period structure.By simulation clearing, and the result of gained is depicted as curve as Fig. 8, wherein simple film is the equal model without photon crystal structure, the introducing due to 2 D photon crystal periodic structure in the present embodiment can be found out, at 500nm (visible ray) to 3500nm (medium-wave infrared), the transmissivity of vanadium oxide film is apparently higher than common vanadium oxide film.This external 700nm-1500nm wave band, the increase of transmissivity is particularly evident, thus the method showing the present embodiment is increasing the good result in vanadium oxide film transmissivity.
Although the present invention with preferred embodiment disclose as above, so itself and be not used to limit the present invention.Persond having ordinary knowledge in the technical field of the present invention, without departing from the spirit and scope of the present invention, when being used for a variety of modifications and variations.Therefore, protection scope of the present invention is when being as the criterion depending on those as defined in claim.
Claims (1)
1. one kind increases the method for vanadium oxide film near-infrared band transmissivity, comprise the following steps: on vanadium oxide film surface by etching or impressing, form the square cellular construction of the multiple dielectric posts shapes in equilateral triangle arrangement, this structure and air are combined to form the staggered 2 D photon crystal periodic structure of refractive index height, it is characterized in that:
The height of dielectric posts is identical with the thickness of vanadium oxide film, and the height of dielectric posts and the thickness of vanadium oxide film are 200nm; The material of dielectric posts is VO
2, refractive index n=2.04; Base material is all the VO of refractive index n=2.04
2, substrate is the square tabular body of a length of side 2400nm;
The end face of square unit is square, and each square unit is arranged in regular hexagon shape in two dimension, its dutycycle r/a=0.35, and wherein r is the described foursquare length of side, and a is the arrangement cycle of described arranged in regular hexagon shape, the spacing that namely positive triangle is capable;
Described arrangement cycle a is 500nm, and described square length of side r is 175nm.
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| CN104698511B (en) * | 2015-01-29 | 2016-09-21 | 南京理工大学 | Increase the method for vanadium oxide film near infrared band absorbance and vanadium oxide film prepared therefrom |
| SG10201912346XA (en) * | 2016-02-11 | 2020-02-27 | Agency Science Tech & Res | Device and arrangement for controlling an electromagnetic wave, methods of forming and operating the same |
| CN109470370A (en) * | 2018-11-20 | 2019-03-15 | 电子科技大学 | The double-deck vanadium oxide film component and dual-band infrared probe unit and preparation method thereof |
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